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Carl J. Neufeld, Ph.D. - Publications

Affiliations: 
2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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24 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020  0.753
2013 Farrell RM, Al-Heji AA, Neufeld CJ, Chen X, Iza M, Cruz SC, Keller S, Nakamura S, DenBaars SP, Mishra UK, Speck JS. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4844955  0.514
2013 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, et al. Optimization of annealing process for improved InGaN solar cell performance Journal of Electronic Materials. 42: 3467-3470. DOI: 10.1007/S11664-013-2794-6  0.553
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  0.478
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... Neufeld CJ, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  0.557
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... Neufeld CJ, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  0.557
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  0.478
2012 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, et al. Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting Conference Record of the Ieee Photovoltaic Specialists Conference. 3076-3079. DOI: 10.1109/PVSC.2012.6318231  0.47
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  0.659
2011 Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525  0.734
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3624850  0.477
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Lang JR, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Effect of doping and polarization on carrier collection in InGaN quantum well solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3595487  0.441
2011 Farrell RM, Neufeld CJ, Cruz SC, Lang JR, Iza M, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm Applied Physics Letters. 98. DOI: 10.1063/1.3591976  0.388
2011 Lang JR, Neufeld CJ, Hurni CA, Cruz SC, Matioli E, Mishra UK, Speck JS. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3 -based molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3575563  0.526
2011 Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501  0.617
2010 Neufeld CJ, Chen Z, Cruz SC, Toledo NG, Denbaars SP, Mishra UK. Optimization of the p-GaN window layer for InGaN/GaN solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2089-2092. DOI: 10.1109/PVSC.2010.5616061  0.764
2009 Neufeld CJ, Cruz SC, Toledo NG, Iza M, DenBaars SP, Mishra UK. Optical and thermal properties of In.12Ga.88N/GaN solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001533-001535. DOI: 10.1109/PVSC.2009.5411356  0.76
2008 Neufeld CJ, Toledo NG, Cruz SC, Iza M, DenBaars SP, Mishra UK. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap Applied Physics Letters. 93. DOI: 10.1063/1.2988894  0.796
2008 Schaake CA, Fichtenbaum NA, Neufeld CJ, Keller S, Denbaars SP, Speck JS, Mishra UK. M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2963-2965. DOI: 10.1002/Pssc.200779284  0.783
2007 Fichtenbaum NA, Neufeld CJ, Schaake C, Wu Y, Wong MH, Grundmann M, Keller S, DenBaars SP, Speck JS, Mishra UK. Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures Japanese Journal of Applied Physics, Part 2: Letters. 46: L230-L233. DOI: 10.1143/Jjap.46.L230  0.759
2007 Neufeld CJ, Schaake C, Grundmann M, Fichtenbaum NA, Keller S, Mishra UK. InGaN/GaN nanopillar-array light emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1605-1608. DOI: 10.1002/Pssc.200674292  0.769
2007 Fichtenbaum NA, Neufeld CJ, Schaake C, Wu Y, Wong MH, Grundmann M, Keller S, DenBaars SP, Speck JS, Mishra UK. MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures Physica Status Solidi (B) Basic Research. 244: 1802-1805. DOI: 10.1002/Pssb.200674753  0.749
2007 Keller S, Fichtenbaum NA, Schaake C, Neufeld CJ, David A, Matioli E, Wu Y, DenBaars SP, Speck JS, Weisbuch C, Mishra UK. Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells Physica Status Solidi (B) Basic Research. 244: 1797-1801. DOI: 10.1002/Pssb.200674752  0.781
2006 Keller S, Schaake C, Fichtenbaum NA, Neufeld CJ, Wu Y, McGroddy K, David A, Denbaars SP, Weisbuch C, Speck JS, Mishra UK. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells Journal of Applied Physics. 100. DOI: 10.1063/1.2234812  0.781
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