| Year |
Citation |
Score |
| 2023 |
Sadeghi MM, Huang Y, Lian C, Giustino F, Tutuc E, MacDonald AH, Taniguchi T, Watanabe K, Shi L. Tunable electron-flexural phonon interaction in graphene heterostructures. Nature. PMID 37100903 DOI: 10.1038/s41586-023-05879-y |
0.348 |
|
| 2021 |
Prasad N, Burg GW, Watanabe K, Taniguchi T, Register LF, Tutuc E. Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures. Physical Review Letters. 127: 117701. PMID 34558942 DOI: 10.1103/PhysRevLett.127.117701 |
0.307 |
|
| 2020 |
Smith B, Fleming G, Parrish KD, Wen F, Fleming E, Jarvis K, Tutuc E, McGaughey AJH, Shi L. Mean Free Path Suppression of Low-Frequency Phonons in SiGe Nanowires. Nano Letters. PMID 33054227 DOI: 10.1021/acs.nanolett.0c03590 |
0.429 |
|
| 2020 |
Efimkin DK, Burg GW, Tutuc E, MacDonald AH. Tunneling and fluctuating electron-hole Cooper pairs in double bilayer graphene Physical Review B. 101. DOI: 10.1103/Physrevb.101.035413 |
0.435 |
|
| 2020 |
Zhang Z, Wang Y, Watanabe K, Taniguchi T, Ueno K, Tutuc E, LeRoy BJ. Flat bands in twisted bilayer transition metal dichalcogenides Nature Physics. 16: 1093-1096. DOI: 10.1038/S41567-020-0958-X |
0.393 |
|
| 2020 |
Wang Y, Dev S, Yang F, Nordin L, Wang Y, Briggs A, Allen M, Allen J, Tutuc E, Wasserman D. InSb pixel loaded microwave resonator for high-speed mid-wave infrared detection Infrared Physics & Technology. 109: 103390. DOI: 10.1016/J.Infrared.2020.103390 |
0.309 |
|
| 2019 |
Paik EY, Zhang L, Burg GW, Gogna R, Tutuc E, Deng H. Interlayer exciton laser of extended spatial coherence in atomically thin heterostructures. Nature. PMID 31768043 DOI: 10.1038/S41586-019-1779-X |
0.347 |
|
| 2019 |
Burg GW, Zhu J, Taniguchi T, Watanabe K, MacDonald AH, Tutuc E. Correlated Insulating States in Twisted Double Bilayer Graphene. Physical Review Letters. 123: 197702. PMID 31765206 DOI: 10.1103/Physrevlett.123.197702 |
0.403 |
|
| 2019 |
Dev S, Wang Y, Kim K, Zamiri M, Kadlec C, Goldflam M, Hawkins S, Shaner E, Kim J, Krishna S, Allen M, Allen J, Tutuc E, Wasserman D. Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits. Nature Communications. 10: 1625. PMID 30967546 DOI: 10.1038/S41467-019-09602-2 |
0.583 |
|
| 2019 |
Wu F, Lovorn T, Tutuc E, Martin I, MacDonald AH. Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers. Physical Review Letters. 122: 086402. PMID 30932597 DOI: 10.1103/Physrevlett.122.086402 |
0.407 |
|
| 2019 |
Tran K, Moody G, Wu F, Lu X, Choi J, Kim K, Rai A, Sanchez DA, Quan J, Singh A, Embley J, Zepeda A, Campbell M, Autry T, Taniguchi T, ... ... Tutuc E, et al. Evidence for moiré excitons in van der Waals heterostructures. Nature. PMID 30804527 DOI: 10.1038/S41586-019-0975-Z |
0.709 |
|
| 2019 |
Park H, Han J, Dillen DC, Park J, Kim C, Sim M, Nah J, Lim J, Tutuc E, Seol JH. Thermal conductivity measurement and analysis of Ge-Si x Ge1−x core–shell nanowires Applied Physics Express. 12: 045001. DOI: 10.7567/1882-0786/Ab0744 |
0.774 |
|
| 2019 |
Wen F, Shabani J, Tutuc E. Josephson Junction Field-Effect Transistors for Boolean Logic Cryogenic Applications Ieee Transactions On Electron Devices. 66: 5367-5374. DOI: 10.1109/Ted.2019.2951634 |
0.704 |
|
| 2019 |
Zhang L, Gogna R, Burg GW, Horng J, Paik E, Chou YH, Kim K, Tutuc E, Deng H. Highly valley-polarized singlet and triplet interlayer excitons in van der Waals heterostructure Physical Review B. 100: 41402. DOI: 10.1103/Physrevb.100.041402 |
0.632 |
|
| 2018 |
Kim K, Prasad N, Movva HCP, Burg GW, Wang Y, Larentis S, Taniguchi T, Watanabe K, Register LF, Tutuc E. Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures. Nano Letters. PMID 30105907 DOI: 10.1021/Acs.Nanolett.8B02770 |
0.809 |
|
| 2018 |
Huang S, Kim K, Efimkin DK, Lovorn T, Taniguchi T, Watanabe K, MacDonald AH, Tutuc E, LeRoy BJ. Topologically Protected Helical States in Minimally Twisted Bilayer Graphene. Physical Review Letters. 121: 037702. PMID 30085814 DOI: 10.1103/Physrevlett.121.037702 |
0.595 |
|
| 2018 |
Wu F, Lovorn T, Tutuc E, MacDonald AH. Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands. Physical Review Letters. 121: 026402. PMID 30085734 DOI: 10.1103/Physrevlett.121.026402 |
0.389 |
|
| 2018 |
Burg GW, Prasad N, Kim K, Taniguchi T, Watanabe K, MacDonald AH, Register LF, Tutuc E. Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures. Physical Review Letters. 120: 177702. PMID 29756812 DOI: 10.1103/Physrevlett.120.177702 |
0.68 |
|
| 2018 |
Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}. Physical Review Letters. 120: 107703. PMID 29570322 DOI: 10.1103/Physrevlett.120.107703 |
0.79 |
|
| 2018 |
Zhang L, Gogna R, Burg W, Tutuc E, Deng H. Photonic-crystal exciton-polaritons in monolayer semiconductors. Nature Communications. 9: 713. PMID 29459736 DOI: 10.1038/S41467-018-03188-X |
0.305 |
|
| 2018 |
Larentis S, Movva HCP, Fallahazad B, Kim K, Behroozi A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Large effective mass and interaction-enhanced Zeeman splitting of
K
-valley electrons in
MoSe2 Physical Review B. 97. DOI: 10.1103/Physrevb.97.201407 |
0.819 |
|
| 2018 |
Wen F, Tutuc E. Strained SixGe1−x-Ge-Si core-double-shell nanowire heterostructures for simultaneous hole and electron mobility enhancement Applied Physics Letters. 113: 113102. DOI: 10.1063/1.5047212 |
0.55 |
|
| 2017 |
Wen F, Tutuc E. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires. Nano Letters. PMID 29185763 DOI: 10.1021/Acs.Nanolett.7B03450 |
0.53 |
|
| 2017 |
Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}. Physical Review Letters. 118: 247701. PMID 28665633 DOI: 10.1103/Physrevlett.118.247701 |
0.818 |
|
| 2017 |
Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene - WSe2 Heterostructures. Nano Letters. PMID 28557462 DOI: 10.1021/Acs.Nanolett.7B01505 |
0.812 |
|
| 2017 |
Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. Acs Nano. PMID 28414214 DOI: 10.1021/Acsnano.7B01306 |
0.804 |
|
| 2017 |
Kim K, DaSilva A, Huang S, Fallahazad B, Larentis S, Taniguchi T, Watanabe K, LeRoy BJ, MacDonald AH, Tutuc E. Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 28292902 DOI: 10.1073/Pnas.1620140114 |
0.834 |
|
| 2017 |
Hsu W, Wen F, Wang X, Wang Y, Dolocan A, Roy A, Kim T, Tutuc E, Banerjee SK. Laser Spike Annealing for Shallow Junctions in Ge CMOS Ieee Transactions On Electron Devices. 64: 346-352. DOI: 10.1109/Ted.2016.2635625 |
0.593 |
|
| 2017 |
Kang S, Mou X, Fallahazad B, Prasad N, Wu X, Valsaraj A, Movva HCP, Kim K, Tutuc E, Register LF, Banerjee SK. Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications Journal of Physics D: Applied Physics. 50: 383002. DOI: 10.1088/1361-6463/Aa8047 |
0.799 |
|
| 2017 |
Mohammed OB, Movva HCP, Prasad N, Valsaraj A, Kang S, Corbet CM, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. ReS2-based interlayer tunnel field effect transistor Journal of Applied Physics. 122: 245701. DOI: 10.1063/1.5004038 |
0.775 |
|
| 2017 |
Wen F, Dillen DC, Kim K, Tutuc E. Shell morphology and Raman spectra of epitaxial Ge−SixGe1−x and Si−SixGe1−x core-shell nanowires Journal of Applied Physics. 121: 234302. DOI: 10.1063/1.4985616 |
0.782 |
|
| 2017 |
Roy A, Ghosh R, Rai A, Sanne A, Kim K, Movva HCP, Dey R, Pramanik T, Chowdhury S, Tutuc E, Banerjee SK. Intra-domain periodic defects in monolayer MoS2 Applied Physics Letters. 110: 201905. DOI: 10.1063/1.4983789 |
0.633 |
|
| 2016 |
Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255 |
0.766 |
|
| 2016 |
Lee K, Xue J, Dillen DC, Watanabe K, Taniguchi T, Tutuc E. Giant Frictional Drag in Double Bilayer Graphene Heterostructures. Physical Review Letters. 117: 046803. PMID 27494492 DOI: 10.1103/Physrevlett.117.046803 |
0.806 |
|
| 2016 |
Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters. PMID 27416362 DOI: 10.1021/Acs.Nanolett.6B01646 |
0.825 |
|
| 2016 |
Dabidian N, Dutta Gupta S, Kholmanov I, Lai K, Lu F, Lee J, Jin M, Trendafilov S, Khanikaev A, Fallahazad B, Tutuc E, Belkin MA, Shvets G. Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces. Nano Letters. PMID 27152557 DOI: 10.1021/Acs.Nanolett.6B00732 |
0.741 |
|
| 2016 |
Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters. 116: 086601. PMID 26967432 DOI: 10.1103/Physrevlett.116.086601 |
0.81 |
|
| 2016 |
Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. Acs Applied Materials & Interfaces. PMID 26939890 DOI: 10.1021/Acsami.6B00961 |
0.785 |
|
| 2016 |
Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263 |
0.817 |
|
| 2016 |
Hsu W, Wang X, Wen F, Wang Y, Dolocan A, Kim T, Tutuc E, Banerjee SK. High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing Ieee Electron Device Letters. 37: 1088-1091. DOI: 10.1109/Led.2016.2587829 |
0.569 |
|
| 2016 |
Valsaraj A, Register LF, Tutuc E, Banerjee SK. DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs Journal of Applied Physics. 120: 134310. DOI: 10.1063/1.4964115 |
0.545 |
|
| 2016 |
Corbet CM, Sonde SS, Tutuc E, Banerjee SK. Improved contact resistance in ReSe2 thin film field-effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4947468 |
0.768 |
|
| 2016 |
Gearba RI, Kim M, Mueller KM, Veneman PA, Lee K, Holliday BJ, Chan CK, Chelikowsky JR, Tutuc E, Stevenson KJ. Atomically Resolved Elucidation of the Electrochemical Covalent Molecular Grafting Mechanism of Single Layer Graphene Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201600196 |
0.633 |
|
| 2015 |
Dillen D, Wen F, Kim K, Tutuc E. Coherently strained Si-SixGe1-x core-shell nanowire heterostructures. Nano Letters. PMID 26606651 DOI: 10.1021/Acs.Nanolett.5B03961 |
0.782 |
|
| 2015 |
Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Acs Nano. PMID 26343531 DOI: 10.1021/Acsnano.5B04611 |
0.814 |
|
| 2015 |
Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters. PMID 26091062 DOI: 10.1021/Acs.Nanolett.5B00314 |
0.812 |
|
| 2015 |
Zhang Z, Dillen DC, Tutuc E, Yu ET. Strain and Hole Gas Induced Raman Shifts in Ge-Si(x)Ge(1-x) Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy. Nano Letters. 15: 4303-10. PMID 26053999 DOI: 10.1021/Acs.Nanolett.5B00176 |
0.785 |
|
| 2015 |
Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Band Alignment in WSe2-Graphene Heterostructures. Acs Nano. 9: 4527-32. PMID 25768037 DOI: 10.1021/Acsnano.5B01114 |
0.808 |
|
| 2015 |
Yankowitz M, Larentis S, Kim K, Xue J, McKenzie D, Huang S, Paggen M, Ali MN, Cava RJ, Tutuc E, LeRoy BJ. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. Nano Letters. 15: 1925-9. PMID 25665012 DOI: 10.1021/Nl5047736 |
0.82 |
|
| 2015 |
Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. Acs Nano. 9: 363-70. PMID 25514177 DOI: 10.1021/Nn505354A |
0.761 |
|
| 2015 |
Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y |
0.812 |
|
| 2015 |
Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737 |
0.81 |
|
| 2014 |
Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK. Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms. Acs Nano. 8: 10480-5. PMID 25259872 DOI: 10.1021/Nn5038509 |
0.829 |
|
| 2014 |
Lee K, Fallahazad B, Xue J, Dillen DC, Kim K, Taniguchi T, Watanabe K, Tutuc E. Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene. Science (New York, N.Y.). 345: 58-61. PMID 24994645 DOI: 10.1126/Science.1251003 |
0.836 |
|
| 2014 |
Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E. Band offset and negative compressibility in graphene-MoS2 heterostructures. Nano Letters. 14: 2039-45. PMID 24611616 DOI: 10.1021/Nl500212S |
0.817 |
|
| 2014 |
Dillen DC, Kim K, Liu ES, Tutuc E. Radial modulation doping in core-shell nanowires. Nature Nanotechnology. 9: 116-20. PMID 24441982 DOI: 10.1038/Nnano.2013.301 |
0.817 |
|
| 2014 |
Chang J, Larentis S, Tutuc E, Register LF, Banerjee SK. Atomistic simulation of the electronic states of adatoms in monolayer MoS2 Applied Physics Letters. 104. DOI: 10.1063/1.4870767 |
0.782 |
|
| 2013 |
Hao Y, Bharathi MS, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson CW, Tutuc E, Yakobson BI, McCarty KF, et al. The role of surface oxygen in the growth of large single-crystal graphene on copper. Science (New York, N.Y.). 342: 720-3. PMID 24158906 DOI: 10.1126/Science.1243879 |
0.726 |
|
| 2013 |
Liu E, Dillen DC, Nah J, Fallahazad B, Kim K, Tutuc E. Realization and Scaling of ${\rm Ge}{\hbox{--}}{\rm Si}_{1{\hbox{-}}{\rm x}}{\rm Ge}_{\rm x}$ Core-Shell Nanowire $n$-FETs Ieee Transactions On Electron Devices. 60: 4027-4033. DOI: 10.1109/Ted.2013.2285711 |
0.785 |
|
| 2013 |
Lee K, Fallahazad B, Min H, Tutuc E. Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics Ieee Transactions On Electron Devices. 60: 103-108. DOI: 10.1109/Ted.2012.2228203 |
0.813 |
|
| 2012 |
Kim S, Jo I, Dillen DC, Ferrer DA, Fallahazad B, Yao Z, Banerjee SK, Tutuc E. Direct measurement of the Fermi energy in graphene using a double-layer heterostructure. Physical Review Letters. 108: 116404. PMID 22540496 DOI: 10.1103/Physrevlett.108.116404 |
0.816 |
|
| 2012 |
Nah J, Dillen DC, Varahramyan KM, Banerjee SK, Tutuc E. Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires. Nano Letters. 12: 108-12. PMID 22111925 DOI: 10.1021/Nl2030695 |
0.788 |
|
| 2012 |
Zhai Y, Palard M, Mathew L, Hussain MM, Willson CG, Tutuc E, Banerjee SK. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays Micro and Nanosystems. 4: 333-338. DOI: 10.2174/1876402911204040333 |
0.438 |
|
| 2012 |
Dillen DC, Varahramyan KM, Corbet CM, Tutuc E. Raman spectroscopy and strain mapping in individualGe-SixGe1−xcore-shell nanowires Physical Review B. 86. DOI: 10.1103/Physrevb.86.045311 |
0.773 |
|
| 2012 |
Fallahazad B, Hao Y, Lee K, Kim S, Ruoff RS, Tutuc E. Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition Physical Review B. 85. DOI: 10.1103/Physrevb.85.201408 |
0.825 |
|
| 2012 |
Wang Z, Chen YP, Zhu H, Engel LW, Tsui DC, Tutuc E, Shayegan M. Unequal layer densities in bilayer Wigner crystal at high magnetic fields Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.195408 |
0.559 |
|
| 2012 |
Larentis S, Fallahazad B, Tutuc E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers Applied Physics Letters. 101: 223104. DOI: 10.1063/1.4768218 |
0.816 |
|
| 2012 |
Movva HCP, Ramón ME, Corbet CM, Sonde S, Fahad Chowdhury S, Carpenter G, Tutuc E, Banerjee SK. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Applied Physics Letters. 101. DOI: 10.1063/1.4765658 |
0.783 |
|
| 2012 |
Zhang Y, Hosseini A, Ahn J, Kwong DN, Fallahazad B, Tutuc E, Chen RT. Vertically integrated double-layer on-chip silicon membranes for 1-to-12 waveguide fanouts Applied Physics Letters. 100: 181102. DOI: 10.1063/1.4709489 |
0.711 |
|
| 2012 |
Kim S, Tutuc E. Coulomb drag and magnetotransport in graphene double layers Solid State Communications. 152: 1283-1288. DOI: 10.1016/J.Ssc.2012.04.032 |
0.659 |
|
| 2011 |
Ramón ME, Gupta A, Corbet C, Ferrer DA, Movva HC, Carpenter G, Colombo L, Bourianoff G, Doczy M, Akinwande D, Tutuc E, Banerjee SK. CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. Acs Nano. 5: 7198-204. PMID 21800895 DOI: 10.1021/Nn202012M |
0.805 |
|
| 2011 |
Kim S, Lee K, Tutuc E. Spin-polarized to valley-polarized transition in graphene bilayers at ν=0 in high magnetic fields. Physical Review Letters. 107: 016803. PMID 21797563 DOI: 10.1103/Physrevlett.107.016803 |
0.728 |
|
| 2011 |
Lee K, Kim S, Points MS, Beechem TE, Ohta T, Tutuc E. Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: evidence for Bernal stacking. Nano Letters. 11: 3624-8. PMID 21797267 DOI: 10.1021/Nl201430A |
0.758 |
|
| 2011 |
Jo I, Hsu IK, Lee YJ, Sadeghi MM, Kim S, Cronin S, Tutuc E, Banerjee SK, Yao Z, Shi L. Low-frequency acoustic phonon temperature distribution in electrically biased graphene. Nano Letters. 11: 85-90. PMID 21126050 DOI: 10.1021/Nl102858C |
0.678 |
|
| 2011 |
Joglekar Y, Kellogg M, Milovanovic M, Tutuc E. Coherent States in Double Quantum Well Systems Advances in Condensed Matter Physics. 2011: 1-1. DOI: 10.1155/2011/970349 |
0.315 |
|
| 2011 |
Jamil M, Mantey J, Onyegam EU, Carpenter GD, Tutuc E, Banerjee SK. High-Performance Ge nMOSFETs With $\hbox{n}^{+}\hbox{-} \hbox{p}$ Junctions Formed by “Spin-On Dopant” Ieee Electron Device Letters. 32: 1203-1205. DOI: 10.1109/Led.2011.2160142 |
0.491 |
|
| 2011 |
Chiu Y, Padmanabhan M, Gokmen T, Shabani J, Tutuc E, Shayegan M, Winkler R. Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.155459 |
0.813 |
|
| 2011 |
Kim S, Jo I, Nah J, Yao Z, Banerjee SK, Tutuc E. Coulomb drag of massless fermions in graphene Physical Review B. 83. DOI: 10.1103/Physrevb.83.161401 |
0.816 |
|
| 2011 |
Liu ES, Nah J, Varahramyan KM, Tutuc E. Erratum: Lateral spin injection in Germanium nanowires (Nano Letters (2010) 10 (3297) DOI: 10.1021/nl1008663) Nano Letters. 11. DOI: 10.1021/Nl2027876 |
0.63 |
|
| 2011 |
Gunawan O, Wang K, Fallahazad B, Zhang Y, Tutuc E, Guha S. High performance wire-array silicon solar cells Progress in Photovoltaics: Research and Applications. 19: 307-312. DOI: 10.1002/Pip.1027 |
0.772 |
|
| 2010 |
Wang KA, Gunawan O, Moumen N, Tulevski G, Mohamed H, Fallahazad B, Tutuc E, Guha S. Wire textured, multi-crystalline Si solar cells created using self-assembled masks. Optics Express. 18: A568-74. PMID 21165090 DOI: 10.1364/Oe.18.00A568 |
0.774 |
|
| 2010 |
Liu ES, Nah J, Varahramyan KM, Tutuc E. Lateral spin injection in germanium nanowires. Nano Letters. 10: 3297-301. PMID 20707379 DOI: 10.1021/Nl1008663 |
0.755 |
|
| 2010 |
Hosseini A, Kwong D, Zhang Y, Chandorkar SA, Crnogorac F, Carlson A, Fallah B, Bank S, Tutuc E, Rogers J, Pease RFW, Chen RT. On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6O1-C6O7. DOI: 10.1116/1.3511508 |
0.301 |
|
| 2010 |
Liu E, Jain N, Varahramyan KM, Nah J, Banerjee SK, Tutuc E. Role of Metal–Semiconductor Contact in Nanowire Field-Effect Transistors Ieee Transactions On Nanotechnology. 9: 237-242. DOI: 10.1109/Tnano.2009.2027119 |
0.778 |
|
| 2010 |
Nah J, Liu ES, Varahramyan KM, Tutuc E. Ge-SixGe1-x coreShell nanowire tunneling field-effect transistors Ieee Transactions On Electron Devices. 57: 1883-1888. DOI: 10.1109/Ted.2010.2051249 |
0.782 |
|
| 2010 |
Reddy D, Register LF, Tutuc E, Banerjee SK. Bilayer pseudospin field-effect transistor: Applications to boolean logic Ieee Transactions On Electron Devices. 57: 755-764. DOI: 10.1109/Ted.2010.2041280 |
0.492 |
|
| 2010 |
Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406 |
0.794 |
|
| 2010 |
Nah J, Liu E, Varahramyan KM, Dillen D, McCoy S, Chan J, Tutuc E. Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process Ieee Electron Device Letters. 31: 1359-1361. DOI: 10.1109/Led.2010.2072770 |
0.761 |
|
| 2010 |
Jamil M, Liu ES, Ferdousi F, Donnelly JP, Tutuc E, Banerjee SK. Effects of Si-cap thickness and temperature on device performance of Si/Ge1-xCx/Si p-MOSFETs Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/4/045005 |
0.497 |
|
| 2010 |
Fallahazad B, Kim S, Colombo L, Tutuc E. Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric Applied Physics Letters. 97: 123105. DOI: 10.1063/1.3492843 |
0.807 |
|
| 2009 |
Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science (New York, N.Y.). 324: 1312-4. PMID 19423775 DOI: 10.1126/Science.1171245 |
0.785 |
|
| 2009 |
Banerjee SK, Register LF, Tutuc E, Reddy D, MacDonald AH. Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device Ieee Electron Device Letters. 30: 158-160. DOI: 10.1109/Led.2008.2009362 |
0.492 |
|
| 2009 |
Gokmen T, Padmanabhan M, Vakili K, Tutuc E, Shayegan M. Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.195311 |
0.821 |
|
| 2009 |
Tutuc E, Pillarisetty R, Shayegan M. Giant frictional drag in strongly interacting bilayers near filling factor one Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.041303 |
0.573 |
|
| 2009 |
Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee SK. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3077021 |
0.795 |
|
| 2008 |
Jamil M, Donnelly JP, Lee S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-03 |
0.516 |
|
| 2008 |
Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031 |
0.484 |
|
| 2008 |
Misra S, Bishop NC, Tutuc E, Shayegan M. Dynamics of density imbalanced bilayer holes in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.035322 |
0.723 |
|
| 2008 |
Misra S, Bishop NC, Tutuc E, Shayegan M. Tunneling between dilute GaAs hole layers Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.161301 |
0.725 |
|
| 2008 |
Bishop NC, Padmanabhan M, Gunawan O, Gokmen T, De Poortere EP, Shkolnikov YP, Tutuc E, Vakili K, Shayegan M. Valley susceptibility of interacting electrons and composite fermions Physica E: Low-Dimensional Systems and Nanostructures. 40: 986-989. DOI: 10.1016/J.Physe.2007.08.067 |
0.803 |
|
| 2007 |
Wang Z, Chen YP, Engel LW, Tsui DC, Tutuc E, Shayegan M. Pinning modes and interlayer correlation in high-magnetic-field bilayer Wigner solids. Physical Review Letters. 99: 136804. PMID 17930621 DOI: 10.1103/Physrevlett.99.136804 |
0.557 |
|
| 2007 |
Shayegan M, De Poortere EP, Gunawan O, Shkolnikov YP, Tutuc E, Vakili K. Quantum hall effect in a multi-valley two-dimensional electron system International Journal of Modern Physics B. 21: 1388-1397. DOI: 10.1142/S0217979207042884 |
0.812 |
|
| 2007 |
Gokmen T, Padmanabhan M, Tutuc E, Shayegan M, De Palo S, Moroni S, Senatore G. Spin susceptibility of interacting two-dimensional electrons with anisotropic effective mass Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.233301 |
0.798 |
|
| 2007 |
Faniel S, Moldovan L, Vlad A, Tutuc E, Bishop N, Melinte S, Shayegan M, Bayot V. In-plane magnetic-field-induced metal-insulator transition in (311)A GaAs two-dimensional hole systems probed by thermopower Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.161307 |
0.69 |
|
| 2007 |
Shahrjerdi D, Tutuc E, Banerjee SK. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2764438 |
0.469 |
|
| 2007 |
Habib B, Tutuc E, Shayegan M. Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes Applied Physics Letters. 90. DOI: 10.1063/1.2720711 |
0.553 |
|
| 2007 |
Tutuc E, Shayegan M. Charge neutral counterflow transport at filling factor 1 in GaAs hole bilayers Solid State Communications. 144: 405-408. DOI: 10.1016/J.Ssc.2007.07.040 |
0.577 |
|
| 2006 |
Tutuc E, Appenzeller J, Reuter MC, Guha S. Realization of a linear germanium nanowire p-n junction. Nano Letters. 6: 2070-4. PMID 16968027 DOI: 10.1021/Nl061338F |
0.319 |
|
| 2006 |
Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Padmanabhan M, Shayegan M. High-mobility AlAs quantum wells with out-of-plane valley occupation Applied Physics Letters. 89. DOI: 10.1063/1.2370504 |
0.805 |
|
| 2006 |
Jagannathan H, Nishi Y, Reuter M, Copel M, Tutuc E, Guha S, Pezzi RP. Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires Applied Physics Letters. 88. DOI: 10.1063/1.2179370 |
0.307 |
|
| 2006 |
Tutuc E, Guha S, Chu JO. Morphology of germanium nanowires grown in presence of B2H6 Applied Physics Letters. 88: 43113. DOI: 10.1063/1.2165089 |
0.318 |
|
| 2006 |
Vakili K, Tutuc E, Shayegan M. Zeeman splitting of interacting two-dimensional electrons with two effective masses Solid State Communications. 140: 285-288. DOI: 10.1016/J.Ssc.2006.08.033 |
0.767 |
|
| 2006 |
Faniel S, Tutuc E, De Poortere EP, Gustin C, Vlad A, Moldovan L, Melinte S, Shayegan M, Bayot V. Thermopower evidence for Wigner crystallization in the insulating phase of two-dimensional GaAs bilayer hole systems Physica E: Low-Dimensional Systems and Nanostructures. 34: 120-123. DOI: 10.1016/J.Physe.2006.02.040 |
0.743 |
|
| 2006 |
Vakili K, Shkolnikov YP, Tutuc E, Bishop NC, De Poortere EP, Shayegan M. Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 34: 89-92. DOI: 10.1016/J.Physe.2006.02.026 |
0.808 |
|
| 2006 |
Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Tsui DC, Shayegan M. Coulomb drag experiments in low density 2D hole bilayers Physica E: Low-Dimensional Systems and Nanostructures. 34: 63-68. DOI: 10.1016/J.Physe.2006.02.017 |
0.754 |
|
| 2006 |
Tutuc E, Shayegan M. Bilayer counterflow transport at filling factor 1 in the strong interacting regime Physica E: Low-Dimensional Systems and Nanostructures. 34: 11-15. DOI: 10.1016/J.Physe.2006.02.012 |
0.583 |
|
| 2006 |
Shayegan M, De Poortere EP, Gunawan O, Shkolnikov YP, Tutuc E, Vakili K. Two-dimensional electrons occupying multiple valleys in AlAs Physica Status Solidi (B) Basic Research. 243: 3629-3642. DOI: 10.1002/Pssb.200642212 |
0.811 |
|
| 2005 |
Vakili K, Shkolnikov YP, Tutuc E, Bishop NC, De Poortere EP, Shayegan M. Spin-dependent resistivity at transitions between integer quantum hall states. Physical Review Letters. 94: 176402. PMID 15904319 DOI: 10.1103/Physrevlett.94.176402 |
0.804 |
|
| 2005 |
Faniel S, Tutuc E, De Poortere EP, Gustin C, Vlad A, Melinte S, Shayegan M, Bayot V. Thermopower of interacting GaAs bilayer hole systems in the reentrant insulating phase near nu=1. Physical Review Letters. 94: 046802. PMID 15783582 DOI: 10.1103/Physrevlett.94.046802 |
0.739 |
|
| 2005 |
Pillarisetty R, Noh H, Tutuc E, Poortere EP, Tsui DC, Shayegan M. Spin polarization dependence of the coulomb drag at large r(s). Physical Review Letters. 94: 016807. PMID 15698117 DOI: 10.1103/Physrevlett.94.016807 |
0.538 |
|
| 2005 |
Winkler R, Tutuc E, Papadakis SJ, Melinte S, Shayegan M, Wasserman D, Lyon SA. Anomalous spin polarization of GaAs two-dimensional hole systems Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195321 |
0.563 |
|
| 2005 |
Tutuc E, Shayegan M. Interaction and disorder in bilayer counterflow transport at filling-factor one Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.081307 |
0.561 |
|
| 2005 |
Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Lai K, Tsui DC, Shayegan M. Coulomb drag near the metal-insulator transition in two dimensions Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.115307 |
0.735 |
|
| 2004 |
Gunawan O, Shkolnikov YP, Poortere EP, Tutuc E, Shayegan M. Ballistic electron transport in AlAs quantum wells. Physical Review Letters. 93: 246603. PMID 15697841 DOI: 10.1103/Physrevlett.93.246603 |
0.804 |
|
| 2004 |
Tutuc E, Shayegan M, Huse DA. Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing. Physical Review Letters. 93: 036802. PMID 15323852 DOI: 10.1103/Physrevlett.93.036802 |
0.608 |
|
| 2004 |
Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Shayegan M. Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells. Physical Review Letters. 92: 226401. PMID 15245241 DOI: 10.1103/Physrevlett.92.226401 |
0.821 |
|
| 2004 |
Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Shayegan M. Realization of an interacting two-valley AlAs bilayer system. Physical Review Letters. 92: 186404. PMID 15169516 DOI: 10.1103/Physrevlett.92.186404 |
0.82 |
|
| 2004 |
Melinte S, Berciu M, Zhou C, Tutuc E, Papadakis SJ, Harrison C, De Poortere EP, Wu M, Chaikin PM, Shayegan M, Bhatt RN, Register RA. Laterally modulated 2D electron system in the extreme quantum limit. Physical Review Letters. 92: 036802. PMID 14753891 DOI: 10.1103/Physrevlett.92.036802 |
0.728 |
|
| 2004 |
Tutuc E, Shayegan M. Counterflow measurements in GaAs hole bilayers: Possible evidence for excitonic condensation International Journal of Modern Physics B. 18: 3685-3692. DOI: 10.1142/S0217979204027281 |
0.603 |
|
| 2004 |
Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Spin splitting in GaAs (100) two-dimensional holes Physical Review B - Condensed Matter and Materials Physics. 69: 1133111-1133114. DOI: 10.1103/Physrevb.69.113311 |
0.531 |
|
| 2004 |
Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Negative differential Rashba effect in two-dimensional hole systems Applied Physics Letters. 85: 3151-3153. DOI: 10.1063/1.1806543 |
0.559 |
|
| 2004 |
Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Tsui DC, Shayegan M. Frictional drag between dilute two-dimensional hole systems Physica E: Low-Dimensional Systems and Nanostructures. 22: 300-303. DOI: 10.1016/J.Physe.2003.12.006 |
0.747 |
|
| 2004 |
Tutuc E, Melinte S, De Poortere EP, Pillarisetty R, Shayegan M. Interacting GaAs bilayer hole systems with layer density imbalance Physica E: Low-Dimensional Systems and Nanostructures. 22: 32-35. DOI: 10.1016/J.Physe.2003.11.209 |
0.744 |
|
| 2003 |
De Poortere EP, Tutuc E, Shayegan M. Critical resistance in the AlAs quantum Hall ferromagnet. Physical Review Letters. 91: 216802. PMID 14683327 DOI: 10.1103/Physrevlett.91.216802 |
0.747 |
|
| 2003 |
Tutuc E, Melinte S, De Poortere EP, Pillarisetty R, Shayegan M. Role of density imbalance in an interacting bilayer hole system. Physical Review Letters. 91: 076802. PMID 12935040 DOI: 10.1103/Physrevlett.91.076802 |
0.742 |
|
| 2003 |
Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Tsui DC, Shayegan M. In-plane magnetodrag between dilute two-dimensional systems. Physical Review Letters. 90: 226801. PMID 12857330 DOI: 10.1103/Physrevlett.90.226801 |
0.748 |
|
| 2003 |
De Poortere EP, Tutuc E, Shayegan M. Publisher’s Note: Critical Resistance in the AlAs Quantum Hall Ferromagnet [Phys. Rev. Lett.91, 216802 (2003)] Physical Review Letters. 91. DOI: 10.1103/Physrevlett.91.239901 |
0.534 |
|
| 2003 |
Tutuc E, Pillarisetty R, Melinte S, De Poortere EP, Shayegan M. Layer-charge instability in unbalanced bilayer systems in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 68: 2013081-2013084. DOI: 10.1103/Physrevb.68.201308 |
0.754 |
|
| 2003 |
Tutuc E, Melinte S, De Poortere EP, Shayegan M, Winkler R. Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields Physical Review B - Condensed Matter and Materials Physics. 67: 2413091-2413094. DOI: 10.1103/Physrevb.67.241309 |
0.759 |
|
| 2003 |
De Poortere EP, Tutuc E, Pillarisetty R, Melinte S, Shayegan M. Magnetism and pseudo-magnetism in quantum Hall systems Physica E: Low-Dimensional Systems and Nanostructures. 20: 123-132. DOI: 10.1016/J.Physe.2003.09.029 |
0.769 |
|
| 2002 |
Shkolnikov YP, De Poortere EP, Tutuc E, Shayegan M. Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field. Physical Review Letters. 89: 226805. PMID 12485094 DOI: 10.1103/Physrevlett.89.226805 |
0.81 |
|
| 2002 |
Pillarisetty R, Noh H, Tsui DC, De Poortere EP, Tutuc E, Shayegan M. Frictional drag between two dilute two-dimensional hole layers. Physical Review Letters. 89: 016805. PMID 12097063 DOI: 10.1103/Physrevlett.89.016805 |
0.738 |
|
| 2002 |
Tutuc E, Melinte S, Shayegan M. Spin polarization and g factor of a dilute GaAs two-dimensional electron system. Physical Review Letters. 88: 036805. PMID 11801080 DOI: 10.1103/Physrevlett.88.036805 |
0.566 |
|
| 2002 |
De Poortere EP, Tutuc E, Shkolnikov YP, Vakili K, Shayegan M, Palm E, Murphy T. Quantum hall effect in AlAs 2D electron systems International Journal of Modern Physics B. 16: 2917-2922. DOI: 10.1142/9789812777805_0001 |
0.814 |
|
| 2002 |
De Poortere EP, Tutuc E, Shkolnikov YP, Vakili K, Shayegan M. Magnetic-field-induced spin polarization of AlAs two-dimensional electrons Physical Review B - Condensed Matter and Materials Physics. 66: 1613081-1613084. DOI: 10.1103/Physrevb.66.161308 |
0.81 |
|
| 2002 |
Winkler R, Noh H, Tutuc E, Shayegan M. Anomalous Rashba spin splitting in two-dimensional hole systems Physical Review B - Condensed Matter and Materials Physics. 65: 1553031-1553034. DOI: 10.1103/Physrevb.65.155303 |
0.56 |
|
| 2002 |
De Poortere EP, Shkolnikov YP, Tutuc E, Papadakis SJ, Shayegan M, Palm E, Murphy T. Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells Applied Physics Letters. 80: 1583-1585. DOI: 10.1063/1.1456265 |
0.815 |
|
| 2002 |
Tutuc E, De Poortere EP, Papadakis SJ, Shayegan M. Spin polarization and transition from metallic to insulating behavior in 2D systems Physica E: Low-Dimensional Systems and Nanostructures. 13: 748-751. DOI: 10.1016/S1386-9477(02)00274-6 |
0.745 |
|
| 2002 |
Winkler R, Noh H, Tutuc E, Shayegan M. Anomalous giant Rashba spin splitting in two-dimensional hole systems Physica E: Low-Dimensional Systems and Nanostructures. 12: 428-431. DOI: 10.1016/S1386-9477(01)00329-0 |
0.564 |
|
| 2002 |
Tutuc E, Shayegan M. Measurements of the effective g-factor in dilute GaAs 2D electrons Physica E: Low-Dimensional Systems and Nanostructures. 12: 420-423. DOI: 10.1016/S1386-9477(01)00324-1 |
0.566 |
|
| 2002 |
De Poortere EP, Tutuc E, Shayegan M. Hysteretic resistance spikes at transitions between quantum Hall ferromagnets in AlAs 2D electrons Physica E: Low-Dimensional Systems and Nanostructures. 12: 36-38. DOI: 10.1016/S1386-9477(01)00301-0 |
0.744 |
|
| 2001 |
Tutuc E, De Poortere EP, Papadakis SJ, Shayegan M. In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems. Physical Review Letters. 86: 2858-61. PMID 11290057 DOI: 10.1103/Physrevlett.86.2858 |
0.738 |
|
| 2000 |
De Poortere EP, Tutuc E, Papadakis SJ, Shayegan M. Resistance spikes at transitions between quantum hall ferromagnets. Science (New York, N.Y.). 290: 1546-9. PMID 11090346 DOI: 10.1126/Science.290.5496.1546 |
0.735 |
|
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