Year |
Citation |
Score |
2004 |
Kamenev BV, Grom GF, Lockwood DJ, McCafrey JP, Laikhtman B, Tsybeskov L. Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.235306 |
0.657 |
|
2003 |
Kamenev BV, Grom GF, Lockwood DJ, McCaffrey JP, Laikhtman B, Tsybeskov L. Carrier tunneling, current instabilities, and negative differential conductivity in nanocrystalline silicon - Silicon dioxide superlattices Materials Research Society Symposium - Proceedings. 737: 813-818. DOI: 10.1557/Proc-737-F11.6 |
0.64 |
|
2002 |
Lockwood DJ, Grom GF, Fauchet PM, Tsybeskov L. Ordering and self-organized growth of Si in the Si/SiO2 superlattice system Journal of Crystal Growth. 237: 1898-1903. DOI: 10.1016/S0022-0248(01)02213-8 |
0.794 |
|
2001 |
Tsybeskov L, Grom GF, Krishnan R, Montes L, Fauchet PM, Kovalev D, Diener J, Timoshenko V, Koch F, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ, Niquet YM, Delerue C, et al. Resonant tunneling in partially disordered silicon nanostructures Europhysics Letters. 55: 552-558. DOI: 10.1209/Epl/I2001-00451-1 |
0.793 |
|
2001 |
Lockwood DJ, Grom GF, Tsybeskov L, Fauchet PM, Labbé HJ, McCaffrey JP, White B. J. Self-organization and ordering in nanocrystalline Si/SiO2 superlattices Physica E: Low-Dimensional Systems and Nanostructures. 11: 99-103. DOI: 10.1016/S1386-9477(01)00183-7 |
0.794 |
|
2001 |
Montès L, Grom GF, Krishnan R, Fauchet PM, Tsybeskov L, White BE. A memory device utilizing resonant tunneling in nanocrystalline silicon superlattices Materials Research Society Symposium - Proceedings. 638. |
0.722 |
|
2001 |
Krishnan R, Grom GF, Fauchet PM, Tsybeskov L, Papernov S, Sproule GI, Lockwood DJ. Atomic force microscopy and raman spectroscopy of nanoscale Si/SiO2 superlattices Materials Research Society Symposium - Proceedings. 638. |
0.706 |
|
2001 |
Grom GF, Fauchet PM, Tsybeskov L, McCaffrey JP, Labbé HJ, Lockwood DJ, White BE. Raman spectroscopy of Si nanocrystals in nanocrystalline Si superlattices: Size, shape and crystallographic orientation Materials Research Society Symposium - Proceedings. 638. |
0.767 |
|
2001 |
Zollner S, Konkar A, Liu R, Yapa H, Dryer PF, Neeley VA, Xie Q, Grom GF, Zhu Q, Krishnan R, Fauchet PM, Tsybeskov LV. Optical and structural characterization of nanocrystalline silicon superlattices: Toward nanoscale silicon metrology Materials Research Society Symposium - Proceedings. 638. |
0.726 |
|
2000 |
Grom GF, Lockwood DJ, McCaffrey JP, Labbe HJ, Fauchet PM, White B, Diener J, Kovalev D, Koch F, Tsybeskov L. Ordering and self-organization in nanocrystalline silicon Nature. 407: 358-61. PMID 11014187 DOI: 10.1038/35030062 |
0.793 |
|
2000 |
Grom GF, Fauchet PM, Tsybeskov L, McCaffrey JP, Labbé HJ, Lockwood DJ, White BE. Raman Spectroscopy of Si Nanocrystals in Nanocrystalline Si Superlattices: Size, Shape and Crystallographic Orientation Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F6.1.1 |
0.807 |
|
2000 |
Krishnan R, Grom G, Fauchet P, Tsybeskov L, Papernov S, Sproule G, Lockwood D. Atomic force microscopy and Raman spectroscopy of nanoscale Si/SiO2superlattices. Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.4.1 |
0.783 |
|
2000 |
Zollner S, Konkar A, Liu R, Yapa H, Dryer PF, Neeley VA, Xie Q, Grom GF, Zhu Q, Krishnan R, Fauchet PM, Tsybeskov LV. Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.1.1 |
0.764 |
|
2000 |
Montès L, Grom GF, Krishnan R, Fauchet PM, Tsybeskov L, White BE. A Memory Device Utilizing Resonant Tunneling in Nanocrystalline Silicon Superlattices Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F2.3.1 |
0.775 |
|
2000 |
Tsybeskov L, Grom GF, Jungo M, Montes L, Fauchet PM, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ. Nanocrystalline silicon superlattices: Building blocks for quantum devices Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 69: 303-308. DOI: 10.1016/S0921-5107(99)00292-5 |
0.813 |
|
2000 |
Grom GF, Fauchet PM, Tsybeskov L. Quantum confinement in nanocrystalline Si superlattices Materials Research Society Symposium - Proceedings. 592: 363-368. |
0.795 |
|
2000 |
Tsybeskov L, Grom GF, Krishnan R, Fauchet PM, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ, Timoshenko V, Diener J, Heckler H, Kovalev D, Koch F, Blanton TN. Optical and microstructural characterization of nanocrystalline silicon superlattices Materials Research Society Symposium - Proceedings. 588: 173-185. |
0.779 |
|
2000 |
Tsybeskov L, Montes L, Grom GF, Krishnan R, Fauchet PM, White B. Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices Annual Device Research Conference Digest. 53-54. |
0.644 |
|
1999 |
Grom GF, Fauchet PM, Tsybeskov L, Mccaffrey JP, Labbé HJ, Lockwood DJ. Quantum Confinement in Nanocrystalline Superlattices Mrs Proceedings. 592: 363. DOI: 10.1557/Proc-592-363 |
0.615 |
|
1999 |
Tsybeskov L, Grom GF, Krishnan R, Fauchet PM, McCaffrey JP, Baribeau J, Sproule GI, Lockwood DJ, Timoshenko V, Diener J, Heckler H, Kovalev D, Koch F, Blanton TN. Optical and Microstructural Characterization of Nanocrystalline Silicon Superlattices Mrs Proceedings. 588. DOI: 10.1557/Proc-588-173 |
0.828 |
|
1999 |
Tsybeskov L, Grom GF, Fauchet PM, McCaffrey JP, Baribeau J, Sproule GI, Lockwood DJ. Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices Applied Physics Letters. 75: 2265-2267. DOI: 10.1063/1.124985 |
0.807 |
|
1999 |
Grom GF, Tsybeskov L, Hirschman KD, Fauchet PM, McCaffrey JP, Labbé HJ, Lockwood DJ. Structural characterization of nc-si/a-sio2 superlattices subjected to thermal treatment Materials Research Society Symposium - Proceedings. 536: 141-146. |
0.775 |
|
1999 |
Tsybeskov L, Grom GF, Fauchet PM, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ. Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices Applied Physics Letters. 75: 2265-2267. |
0.764 |
|
1998 |
Bondarenko V, Vorozov N, Dolgyi L, Yakovtseva V, Petrovich V, Volchek S, Kazuchits N, Grom G, Lopez HA, Tsybeskov L, Fauchet PM. Formation and Luminescent Properties of Oxidized Porous Silicon Doped with Erbium by Electrochemical Procedure Mrs Proceedings. 536. DOI: 10.1557/Proc-536-69 |
0.765 |
|
1998 |
Grom GF, Tsybeskov L, Hirschman KD, Fauchet PM, McCaffrey JP, Labbé HJ, Lockwood DJ. Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment Mrs Proceedings. 536. DOI: 10.1557/Proc-536-141 |
0.806 |
|
1998 |
Tsybeskov L, Grom GF, Hirschman KD, Lopez HA, Chan S, Fauchet PM, Bondarenko VP. Er-doped porous silicon led for integrated optoelectronics Materials Research Society Symposium - Proceedings. 486: 145-150. DOI: 10.1557/Proc-486-145 |
0.765 |
|
1997 |
Tsybeskov L, Grom GF, Hirschman KD, Lopez HA, Chan S, Fauchet PM, Bondarenko VP. Er-Doped Porous Silicon Led For Integrated Optoelectronics Mrs Proceedings. 486. DOI: 10.1557/PROC-486-145 |
0.651 |
|
Show low-probability matches. |