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Leonid Tsybeskov, PhD - Publications

Affiliations: 
2001 Electrical and Computer Engineering University of Rochester, Rochester, NY 
 2001- Electrical and Computer Engineering New Jersey Institute of Technology, Newark, NJ, United States 
Area:
Materials Science Engineering, Semiconductor Nanostructures
Website:
https://people.njit.edu/faculty/tsybesko
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Year Citation  Score
2019 Wang X, Tsybeskov L, Kamins TI, Wu X, Lockwood DJ. Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport Journal of Applied Physics. 125: 205107. DOI: 10.1063/1.5091934  0.518
2016 Lockwood DJ, Wu X, Baribeau J, Mala SA, Wang X, Tsybeskov L. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission Frontiers in Materials. 3. DOI: 10.3389/Fmats.2016.00012  0.665
2016 Tsybeskov L, Mala SA, Wang X, Baribeau JM, Wu X, Lockwood DJ. Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties Solid State Communications. 245: 25-30. DOI: 10.1016/J.Ssc.2016.07.008  0.388
2015 Wang X, Tsybeskov L, Kamins TI, Wu X, Lockwood DJ. Structural and optical properties of axial silicon-germanium nanowire heterojunctions Journal of Applied Physics. 118. DOI: 10.1063/1.4937345  0.578
2014 Lockwood DJ, Tsybeskov L. Fast Light-Emitting Silicon-Germanium Nanostructures Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/Jstqe.2013.2292878  0.629
2014 Mala SA, Tsybeskov L, Lockwood DJ, Wu X, Baribeau JM. Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation Journal of Applied Physics. 116. DOI: 10.1063/1.4886598  0.531
2014 Mala SA, Tsybeskov L, Lockwood DJ, Wu X, Baribeau JM. Carrier recombination in tailored multilayer Si/Si1-xGex nanostructures Physica B: Condensed Matter. 453: 29-33. DOI: 10.1016/J.Physb.2014.03.084  0.622
2013 Mala S, Tsybeskov L, Baribeau JM, Wu X, Lockwood DJ. Quantitative analysis of Raman spectra in Si/SiGe nanostructures Materials Research Society Symposium Proceedings. 1510: 1-6. DOI: 10.1557/Opl.2013.271  0.517
2013 Lockwood DJ, Wu X, Baribeau JM, Mala SA, Modi N, Tsybeskov L. Fast and slow light-emitting silicon-germanium nanostructures Ecs Transactions. 53: 3-16. DOI: 10.1149/05304.0003ecst  0.551
2013 Tsybeskov L, Chang HY, Mala S, Kamins TI, Wu X, Lockwood DJ. Structural and optical properties of Si/Ge nanowire heterojunctions Ecs Transactions. 53: 215-224. DOI: 10.1149/05301.0215ecst  0.487
2013 Mala SA, Tsybeskov L, Lockwood DJ, Wu X, Baribeau JM. Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters Applied Physics Letters. 103. DOI: 10.1063/1.4813560  0.591
2013 Lockwood DJ, Tsybeskov L. Optical properties of nanoscale Si/SiO2superlattices Nanostructured Semiconductors: From Basic Research to Applications. 555-617.  0.402
2012 Lockwood DJ, Wu X, Baribeau JM, Modi N, Tsybeskov L. Fast luminescence in silicon-germanium nanostructures Ecs Transactions. 50: 35-47. DOI: 10.1149/05041.0035ecst  0.54
2012 Modi N, Lockwood DJ, Wu X, Baribeau JM, Tsybeskov L. Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers Journal of Applied Physics. 111. DOI: 10.1063/1.4729077  0.592
2012 Modi N, Tsybeskov L, Baribeau JM, Wu X, Lockwood DJ. Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures Journal of Applied Physics. 111. DOI: 10.1063/1.3698303  0.505
2012 Lockwood DJ, Tsybeskov L. Fast light-emitting silicon-germanium nanostructures for optical interconnects Optical and Quantum Electronics. 44: 505-512. DOI: 10.1007/s11082-012-9549-0  0.501
2011 Modi N, Tsybeskov L, Lockwood DJ, Wu XZ, Baribeau JM. Reversible degradation of photoluminescence in Si/SiGe three dimensional nanostructures Materials Research Society Symposium Proceedings. 1409: 43-48. DOI: 10.1557/Opl.2012.730  0.488
2011 Modi N, Tsybeskov L, Lockwood DJ, Wu XZ, Baribeau JM. Strain engineering and luminescence in Si/SiGe three dimensional nanostructures Materials Research Society Symposium Proceedings. 1305: 64-69. DOI: 10.1557/Opl.2011.300  0.607
2011 Lockwood DJ, Tsybeskov L. Self-assembled silicon-germanium nanostructures for CMOS compatible light emitters Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2870-2874. DOI: 10.1002/Pssc.201084032  0.511
2010 Tsybeskov L, Kamenev BV, Sirenko AA, McCaffrey JP, Lockwood DJ. Strain-induced lateral self-organization in Si/ SiO2 nanostructures Applied Physics Letters. 96. DOI: 10.1063/1.3290250  0.607
2009 Tsybeskov L. Light emission in three-dimensional Si/SiGe nanostructures: Physics and applications Ecs Transactions. 25: 67-91. DOI: 10.1149/1.3211165  0.399
2009 Tsybeskov L, Lockwood DJ. Silicon-germanium nanostructures for light emitters and on-chip optical interconnects Proceedings of the Ieee. 97: 1284-1303. DOI: 10.1109/JPROC.2009.2020711  0.31
2009 Lee EK, Lockwood DJ, Baribeau JM, Bratkovsky AM, Kamins TI, Tsybeskov L. Erratum: Photoluminescence dynamics and Auger fountain in three-dimensional Si/SiGe multilayer nanostructures [Phys. Rev. B 79, 233307 (2009)] Physical Review B. 80: 49904. DOI: 10.1103/Physrevb.80.049904  0.511
2009 Lee E-, Lockwood DJ, Baribeau J-, Bratkovsky AM, Kamins TI, Tsybeskov L. Photoluminescence dynamics and Auger fountain in three-dimensional Si/SiGe multilayer nanostructures Physical Review B. 79. DOI: 10.1103/Physrevb.79.233307  0.558
2009 Chang HY, Tsybeskov L, Sharma S, Kamins TI, Wu X, Lockwood DJ. Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions Applied Physics Letters. 95. DOI: 10.1063/1.3240595  0.605
2009 Tsybeskov L, Lee EK, Chang HY, Lockwood DJ, Baribeau JM, Wu X, Kamins TI. Silicon-germanium nanostructures for on-chip optical interconnects Applied Physics a: Materials Science and Processing. 95: 1015-1027. DOI: 10.1007/S00339-009-5111-8  0.515
2008 Lockwood DJ, Baribeau JM, Lee EK, Chang HY, Tsybeskov L. Light emission from three-dimensional silicon-germanium nanostructures Materials Research Society Symposium Proceedings. 1145: 39-50. DOI: 10.1557/Proc-1145-Mm02-01  0.603
2008 Tsybeskov L, Lee EK, Chang HY, Kamenev BV, Lockwood DJ, Baribeau JM, Kamins TI. Three-dimensional silicon-germanium nanostructures for CMOS compatible light emitters and optical interconnects Advances in Optical Technologies. DOI: 10.1155/2008/218032  0.563
2008 Lockwood DJ, Tsybeskov L. Optical properties of silicon nanocrystal superlattices Journal of Nanophotonics. 2. DOI: 10.1117/1.2910994  0.644
2008 Lockwood DJ, Baribeau JM, Kamenev BV, Lee EK, Tsybeskov L. Structural and optical properties of three-dimensional Si 1-xGex/Si nanostructures Semiconductor Science and Technology. 23. DOI: 10.1088/0268-1242/23/6/064003  0.589
2008 Lee EK, Tsybeskov L, Kamins TI. Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures Applied Physics Letters. 92. DOI: 10.1063/1.2837184  0.347
2008 Chang HY, Tsybeskov L, Sirenko A, Lockwood DJ, Baribeau JM, Wu X, Dharma-Wardana MWC. Raman spectroscopy and thermal conductivity of Si/SiGe nanostructures Materials Research Society Symposium Proceedings. 1145: 183-188.  0.373
2007 Chang HY, Lee EK, Kamenev BV, Baribeau JM, Lockwood DJ, Tsybeskov L. Optical properties of multiple, delta-doped Si:B/Si layers Materials Research Society Symposium Proceedings. 958: 49-54. DOI: 10.1557/Proc-0958-L10-23  0.582
2007 Lee EK, Kamenev BV, Kamins TI, Baribeau JM, Lockwood DJ, Tsybeskov L. Photoluminescence excitation dependence in three-dimensional Si/SiGe nanostructures Materials Research Society Symposium Proceedings. 958: 63-68. DOI: 10.1557/Proc-0958-L03-05  0.456
2007 Lee EK, Kamenev BV, Tsybeskov L, Sharma S, Kamins TI. Carrier transport in Ge nanowire/Si substrate heterojunctions Journal of Applied Physics. 101. DOI: 10.1063/1.2730558  0.583
2006 Suemasu T, Li C, Sunohara T, Ugajin Y, Kobayashi K, Murase S, Hasegawa F, Tsybeskov L, Lockwood D, Delerue C, Ichikawa M, VanBuuren A, 李成. Epitaxial growth and luminescence characterization of Si-based double heterostructures light-einitting diodes with iron disilicide active region Mrs Proceedings. 958. DOI: 10.1557/Proc-0958-L01-05  0.465
2006 Ryabchikov YV, Forsh PA, Lebedev EA, Timoshenko VY, Kashkarov PK, Kamenev BV, Tsybeskov L. Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix Semiconductors. 40: 1052-1054. DOI: 10.1134/S1063782606090119  0.585
2006 Tsybeskov L, Kamenev BV, Baribeau JM, Lockwood DJ. Optical properties of composition-controlled three-dimensional Si/Si 1-xGex nanostructures Ieee Journal On Selected Topics in Quantum Electronics. 12: 1579-1584. DOI: 10.1109/Jstqe.2006.884061  0.589
2006 Kamenev BV, Lee EK, Chang HY, Han H, Grebel H, Tsybeskov L, Kamins TI. Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures Applied Physics Letters. 89. DOI: 10.1063/1.2361198  0.352
2006 Kamenev BV, Grebel H, Tsybeskov L. Laser-induced structural modifications in nanocrystalline silicon/amorphous silicon dioxide superlattices Applied Physics Letters. 88. DOI: 10.1063/1.2193040  0.598
2005 Kamenev BV, Grebel H, Tsybeskov L, Timoshenko VY. Structural modifications of nc-Si/SiO2 super-lattices by localized photo-induced heating Materials Research Society Symposium Proceedings. 832: 219-224. DOI: 10.1557/Proc-832-F7.26  0.569
2005 Lee EK, Kamenev BV, Forsh PA, Kamins TI, Tsybeskov L. Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions Materials Research Society Symposium Proceedings. 832: 335-340. DOI: 10.1557/Proc-832-F7.21  0.525
2005 Kamenev BV, Sharma V, Tsybeskov L, Kamins TI. Optical properties of Ge nanowires grown on silicon (100) and (111) substrates Proceedings - Electrochemical Society. 49-56. DOI: 10.1557/Proc-832-F7.20  0.63
2005 Kamenev BV, Tsybeskov L, Baribeau JM, Lockwood DJ. Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.193306  0.599
2005 Kamenev BV, Baribeau JM, Lockwood DJ, Tsybeskov L. Optical properties of Stranski-Krastanov grown three-dimensional Si/Si 1-xGex nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 26: 174-179. DOI: 10.1016/J.Physe.2004.08.047  0.582
2005 Kamenev BV, Sharma V, Tsybeskov L, Kamins TI. Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces Physica Status Solidi (a) Applications and Materials Science. 202: 2753-2758. DOI: 10.1002/Pssa.200590021  0.617
2004 Kamenev BV, Grom GF, Lockwood DJ, McCafrey JP, Laikhtman B, Tsybeskov L. Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.235306  0.785
2004 Kamenev BV, Tsybeskov L, Baribeau JM, Lockwood DJ. Photoluminescence and Raman scattering in three-dimensional Si/Si 1-xGe x nanostructures Applied Physics Letters. 84: 1293-1295. DOI: 10.1063/1.1650873  0.602
2003 Timoshenko VY, Shalygina OA, Lisachenko MG, Kashkarov PK, Kovalev D, Heitmann J, Zacharias M, Kamenev BV, Tsybeskov L. Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures Materials Research Society Symposium - Proceedings. 789: 227-232. DOI: 10.1557/Proc-789-N11.2  0.623
2003 Kamenev BV, Grom GF, Lockwood DJ, McCaffrey JP, Laikhtman B, Tsybeskov L. Carrier tunneling, current instabilities, and negative differential conductivity in nanocrystalline silicon - Silicon dioxide superlattices Materials Research Society Symposium - Proceedings. 737: 813-818. DOI: 10.1557/Proc-737-F11.6  0.776
2003 Duzhko V, Tsybeskov L. Time-resolved carrier tunneling in nanocrystalline silicon/amorphous silicon dioxide superlattices Applied Physics Letters. 83: 5229-5231. DOI: 10.1063/1.1630151  0.629
2003 Kamenev BV, Grebel H, Tsybeskov L, Kamins TI, Williams RS, Baribeau JM, Lockwood DJ. Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures Applied Physics Letters. 83: 5035-5037. DOI: 10.1063/1.1628403  0.585
2003 Striemer CC, Krishnan R, Xie Q, Tsybeskov L, Fauchet PM. Periodic two-dimensional arrays of silicon quantum dots for nanoscale device applications Materials Research Society Symposium - Proceedings. 737: 431-436.  0.522
2002 Striemer CC, Krishnan R, Xie Q, Tsybeskov L, Fauchet PM. Periodic Two-dimensional Arrays of Silicon Quantum Dots for Nanoscale Device Applications Mrs Proceedings. 737. DOI: 10.1557/Proc-737-F3.27  0.707
2002 Rao PN, Schiff EA, Tsybeskov L, Fauchet P. Photocarrier drift-mobility measurements and electron localization in nanoporous silicon Chemical Physics. 284: 129-138. DOI: 10.1016/S0301-0104(02)00544-X  0.573
2002 Lockwood DJ, Grom GF, Fauchet PM, Tsybeskov L. Ordering and self-organized growth of Si in the Si/SiO2 superlattice system Journal of Crystal Growth. 237: 1898-1903. DOI: 10.1016/S0022-0248(01)02213-8  0.847
2002 Tsybeskov L. Nanocrystalline silicon superlattices for nanoelectronic devices 2002 International Conference On Computational Nanoscience and Nanotechnology - Iccn 2002. 304-307.  0.467
2001 Striemer CC, Fauchet PM, Tsybeskov L. Lateral superlattices fabricated with interferometric lithography for nanoscale device applications Materials Research Society Symposium - Proceedings. 638. DOI: 10.1557/Proc-638-F5.13.1  0.51
2001 Tsybeskov L, Grom GF, Krishnan R, Montes L, Fauchet PM, Kovalev D, Diener J, Timoshenko V, Koch F, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ, Niquet YM, Delerue C, et al. Resonant tunneling in partially disordered silicon nanostructures Europhysics Letters. 55: 552-558. DOI: 10.1209/Epl/I2001-00451-1  0.828
2001 Dittrich T, Timoshenko VY, Rappich J, Tsybeskov L. Room temperature electroluminescence from a c-Si p-i-n structure Journal of Applied Physics. 90: 2310-2313. DOI: 10.1063/1.1390310  0.413
2001 Striemer CC, Krishnan R, Fauchet PM, Tsybeskov L, Xie Q. Controlled Nucleation of Silicon Nanocrystals on a Periodic Template Nano Letters. 1: 643-646. DOI: 10.1021/Nl015599V  0.694
2001 Lockwood DJ, Grom GF, Tsybeskov L, Fauchet PM, Labbé HJ, McCaffrey JP, White B. J. Self-organization and ordering in nanocrystalline Si/SiO2 superlattices Physica E: Low-Dimensional Systems and Nanostructures. 11: 99-103. DOI: 10.1016/S1386-9477(01)00183-7  0.845
2001 Kim HB, Montes L, Krishnan R, Fauchet PM, Tsybeskov L. Carrier transport and lateral conductivity in nanocrystalline silicon layers Materials Research Society Symposium - Proceedings. 638.  0.413
2001 Montès L, Grom GF, Krishnan R, Fauchet PM, Tsybeskov L, White BE. A memory device utilizing resonant tunneling in nanocrystalline silicon superlattices Materials Research Society Symposium - Proceedings. 638.  0.81
2001 Krishnan R, Grom GF, Fauchet PM, Tsybeskov L, Papernov S, Sproule GI, Lockwood DJ. Atomic force microscopy and raman spectroscopy of nanoscale Si/SiO2 superlattices Materials Research Society Symposium - Proceedings. 638.  0.797
2001 Grom GF, Fauchet PM, Tsybeskov L, McCaffrey JP, Labbé HJ, Lockwood DJ, White BE. Raman spectroscopy of Si nanocrystals in nanocrystalline Si superlattices: Size, shape and crystallographic orientation Materials Research Society Symposium - Proceedings. 638.  0.833
2001 Zollner S, Konkar A, Liu R, Yapa H, Dryer PF, Neeley VA, Xie Q, Grom GF, Zhu Q, Krishnan R, Fauchet PM, Tsybeskov LV. Optical and structural characterization of nanocrystalline silicon superlattices: Toward nanoscale silicon metrology Materials Research Society Symposium - Proceedings. 638.  0.807
2000 Grom GF, Lockwood DJ, McCaffrey JP, Labbe HJ, Fauchet PM, White B, Diener J, Kovalev D, Koch F, Tsybeskov L. Ordering and self-organization in nanocrystalline silicon Nature. 407: 358-61. PMID 11014187 DOI: 10.1038/35030062  0.847
2000 Grom GF, Fauchet PM, Tsybeskov L, McCaffrey JP, Labbé HJ, Lockwood DJ, White BE. Raman Spectroscopy of Si Nanocrystals in Nanocrystalline Si Superlattices: Size, Shape and Crystallographic Orientation Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F6.1.1  0.855
2000 Krishnan R, Grom G, Fauchet P, Tsybeskov L, Papernov S, Sproule G, Lockwood D. Atomic force microscopy and Raman spectroscopy of nanoscale Si/SiO2superlattices. Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.4.1  0.824
2000 Kim HB, Montes L, Krishnan R, Fauchet PM, Tsybeskov L. Carrier Transport and Lateral Conductivity in Nanocrystalline Silicon Layers Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.12.1  0.681
2000 Montès L, Grom GF, Krishnan R, Fauchet PM, Tsybeskov L, White BE. A Memory Device Utilizing Resonant Tunneling in Nanocrystalline Silicon Superlattices Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F2.3.1  0.836
2000 Petrovich V, Volchek S, Dolgyi L, Kazuchits N, Yakovtseva V, Bondarenko V, Tsybeskov L, Fauchet P. Journal of Porous Materials. 7: 37-40. DOI: 10.1023/A:1009647903656  0.49
2000 Tsybeskov L, Grom GF, Jungo M, Montes L, Fauchet PM, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ. Nanocrystalline silicon superlattices: Building blocks for quantum devices Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 69: 303-308. DOI: 10.1016/S0921-5107(99)00292-5  0.859
2000 Zacharias M, Bläsing J, Hirschman K, Tsybeskov L, Fauchet PM. Extraordinary crystallization of amorphous Si/SiO2 superlattices Journal of Non-Crystalline Solids. 640-644. DOI: 10.1016/S0022-3093(00)00033-8  0.712
2000 Tsybeskov L, Grom GF, Krishnan R, Fauchet PM, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ, Timoshenko V, Diener J, Heckler H, Kovalev D, Koch F, Blanton TN. Optical and microstructural characterization of nanocrystalline silicon superlattices Materials Research Society Symposium - Proceedings. 588: 173-185.  0.838
2000 Grom GF, Fauchet PM, Tsybeskov L. Quantum confinement in nanocrystalline Si superlattices Materials Research Society Symposium - Proceedings. 592: 363-368.  0.845
2000 Zacharias M, Bläsing J, Hirschman K, Tsybeskov L, Fauchet PM. Extraordinary crystallization of amorphous Si/SiO2 superlattices Journal of Non-Crystalline Solids. 266: 640-644.  0.516
2000 Tsybeskov L, Montes L, Grom GF, Krishnan R, Fauchet PM, White B. Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices Annual Device Research Conference Digest. 53-54.  0.77
1999 Grom GF, Fauchet PM, Tsybeskov L, Mccaffrey JP, Labbé HJ, Lockwood DJ. Quantum Confinement in Nanocrystalline Superlattices Mrs Proceedings. 592: 363. DOI: 10.1557/Proc-592-363  0.726
1999 Tsybeskov L, Grom GF, Krishnan R, Fauchet PM, McCaffrey JP, Baribeau J, Sproule GI, Lockwood DJ, Timoshenko V, Diener J, Heckler H, Kovalev D, Koch F, Blanton TN. Optical and Microstructural Characterization of Nanocrystalline Silicon Superlattices Mrs Proceedings. 588. DOI: 10.1557/Proc-588-173  0.859
1999 Chan S, Tsybeskov L, Fauchet PM. Porous silicon multilayer mirrors and microcavity resonators for optoelectronic applications Materials Research Society Symposium - Proceedings. 536: 117-122. DOI: 10.1557/Proc-536-117  0.642
1999 Bondarenko VP, Yakovtseva VA, Dolgiǐ LN, Vorozov NN, Kazyuchits NM, Tsybeskov L, Foucher F. Erbium-doped oxidized porous silicon for integrated optical waveguides Technical Physics Letters. 25: 705-706. DOI: 10.1134/1.1262606  0.412
1999 Tsybeskov L, Grom GF, Fauchet PM, McCaffrey JP, Baribeau J, Sproule GI, Lockwood DJ. Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices Applied Physics Letters. 75: 2265-2267. DOI: 10.1063/1.124985  0.855
1999 Zacharias M, Bläsing J, Veit P, Tsybeskov L, Hirschman K, Fauchet PM. Thermal crystallization of amorphous Si/SiO2 superlattices Applied Physics Letters. 74: 2614-2616. DOI: 10.1063/1.123914  0.72
1999 Lopez HA, Chan S, Tsybeskov L, Koyama H, Bondarenko VP, Fauchet PM. Integration of multilayers in Er-doped porous silicon structures and advances in 1.5 um optoelectronic devices Materials Research Society Symposium - Proceedings. 536: 135-140.  0.363
1999 Grom GF, Tsybeskov L, Hirschman KD, Fauchet PM, McCaffrey JP, Labbé HJ, Lockwood DJ. Structural characterization of nc-si/a-sio2 superlattices subjected to thermal treatment Materials Research Society Symposium - Proceedings. 536: 141-146.  0.832
1999 Tsybeskov L, Grom GF, Fauchet PM, McCaffrey JP, Baribeau JM, Sproule GI, Lockwood DJ. Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices Applied Physics Letters. 75: 2265-2267.  0.833
1999 Zacharias M, Bläsing J, Veit P, Tsybeskov L, Hirschman K, Fauchet PM. Thermal crystallization of amorphous Si/SiO2 superlattices Applied Physics Letters. 74: 2614-2616.  0.543
1999 Montés L, Tsybeskov L, Fauchet PM, Pangal K, Sturm JC. Optical analysis of plasma enhanced crystallization of amorphous silicon films Materials Research Society Symposium - Proceedings. 536: 505-510.  0.388
1999 Striemer CC, Chan S, Lopez HA, Hirschman KD, Koyama H, Zhu Q, Tsybeskov L, Fauchet PM, Kalkhoran NM, Depaulis L. LEDs based on oxidized porous polysilicon on a transparent substrate Materials Research Society Symposium - Proceedings. 536: 511-515.  0.376
1998 Tsybeskov L. Nanocrystalline silicon for optoelectronic applications Mrs Bulletin. 23: 33-38. DOI: 10.1557/S0883769400030244  0.515
1998 Coffa S, Tsybeskov L. Silicon-Based Optoelectronics Mrs Bulletin. 23: 16-19. DOI: 10.1557/S0883769400030219  0.521
1998 Bondarenko V, Vorozov N, Dolgyi L, Yakovtseva V, Petrovich V, Volchek S, Kazuchits N, Grom G, Lopez HA, Tsybeskov L, Fauchet PM. Formation and Luminescent Properties of Oxidized Porous Silicon Doped with Erbium by Electrochemical Procedure Mrs Proceedings. 536. DOI: 10.1557/Proc-536-69  0.792
1998 Striemer CC, Chan S, Lopez HA, Hirschman KD, Koyama H, Zhu Q, Tsybeskov L, Fauchet PM, Kalkhoran NM, Depaulis L. Leds Based on Oxidized Porous Polysilicon on a Transparent Substrate Mrs Proceedings. 536. DOI: 10.1557/Proc-536-511  0.618
1998 Montès L, Tsybeskov L, Fauchet PM, Pangal K, Sturm JC, Wagner S. Optical Analysis of Plasma Enhanced Crystallization of Amorphous Silicon Films Mrs Proceedings. 536. DOI: 10.1557/Proc-536-505  0.626
1998 Grom GF, Tsybeskov L, Hirschman KD, Fauchet PM, McCaffrey JP, Labbé HJ, Lockwood DJ. Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment Mrs Proceedings. 536. DOI: 10.1557/Proc-536-141  0.849
1998 Lopez HA, Chan S, Tsybeskov L, Koyama H, Bondarenko VP, Fauchet PM. Integration of Multilayers in Er-Doped Porous Silicon Structures and Advances in 1.5 μm Optoelectronic Devices Mrs Proceedings. 536. DOI: 10.1557/Proc-536-135  0.61
1998 Tsybeskov L, Grom GF, Hirschman KD, Lopez HA, Chan S, Fauchet PM, Bondarenko VP. Er-doped porous silicon led for integrated optoelectronics Materials Research Society Symposium - Proceedings. 486: 145-150. DOI: 10.1557/Proc-486-145  0.815
1998 Fauchet PM, Tsybeskov L. Nanoscale silicon for electroluminescent devices Proceedings of Spie - the International Society For Optical Engineering. 3283: 793-807. DOI: 10.1117/12.316733  0.669
1998 Tsybeskov L, Hirschman KD, Duttagupta SP, Zacharias M, Fauchet PM, McCaffrey JP, Lockwood DJ. Nanocrystalline-silicon superlattice produced by controlled recrystallization Applied Physics Letters. 72: 43-45. DOI: 10.1063/1.120640  0.741
1998 Zacharias M, Tsybeskov L, Hirschman KD, Fauchet PM, Bläsing J, Kohlert P, Veit P. Nanocrystalline silicon superlattices: fabrication and characterization Journal of Non-Crystalline Solids. 227: 1132-1136. DOI: 10.1016/S0022-3093(98)00287-7  0.739
1998 Koyama H, Tsybeskov L, Fauchet PM. Strongly nonlinear luminescence in oxidized porous silicon films Journal of Luminescence. 80: 99-102. DOI: 10.1016/S0022-2313(98)00167-7  0.615
1998 Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM, Zacharias M, McCaffrey JP, Lockwood DJ. Fabrication of Nanocrystalline Silicon Superlattices by Controlled Thermal Recrystallization Physica Status Solidi (a). 165: 69-77. DOI: 10.1002/(Sici)1521-396X(199801)165:1<69::Aid-Pssa69>3.0.Co;2-H  0.599
1998 Fauchet PM, von Behren J, Hirschman KD, Tsybeskov L, Duttagupta SP. Porous Silicon Physics and Device Applications: A Status Report Physica Status Solidi (a). 165: 3-13. DOI: 10.1002/(Sici)1521-396X(199801)165:1<3::Aid-Pssa3>3.0.Co;2-T  0.56
1998 Grom G, Tsybeskov L, Hirschman KD, Fauchet PM, Zacharias M, Blanton TN, McCaffrey JP, Baribeau JM, Sproule GI, Labbe HJ, Lockwood DJ. Optical and structural characterization of nc-Si/a-SiO2 superlattices Proceedings of Spie - the International Society For Optical Engineering. 3491: 671-676.  0.561
1998 Zacharias M, Tsybeskov L, Hirschman KD, Fauchet PM, Bläsing J, Kohlert P, Veit P. Nanocrystalline silicon superlattices: Fabrication and characterization Journal of Non-Crystalline Solids. 227: 1132-1136.  0.562
1998 Fauchet PM, Von Behren J, Hirschman KD, Tsybeskov L, Duttagupta SP. Porous silicon physics and device applications: A status report Physica Status Solidi (a) Applied Research. 165: 3-13.  0.412
1998 Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM, Zacharias M, Mccaffrey JP, Lockwood DJ. Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization Physica Status Solidi (a) Applied Research. 165: 69-77.  0.602
1997 Fauchet PM, Tsybeskov L, Zacharias M, Hirschman K. Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices Mrs Proceedings. 485. DOI: 10.1557/Proc-485-49  0.718
1997 Hirschman KD, Tsybeskov L, Duttagupta SP, Fauchet PM. Integrating bipolar junction transistors with silicon-based light-emitting devices Materials Research Society Symposium - Proceedings. 452: 705-710. DOI: 10.1557/Proc-452-705  0.623
1997 Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM. Electroluminescence and carrier transport in LEDs based on silicon-rich silicon oxide Materials Research Society Symposium - Proceedings. 452: 681-686. DOI: 10.1557/Proc-452-681  0.718
1997 Rao P, Schiff EA, Tsybeskov L, Fauchet PM. Electron time-of-flight measurements in porous silicon Materials Research Society Symposium - Proceedings. 452: 613-618. DOI: 10.1557/Proc-452-613  0.542
1997 Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM, Moore KL, Hall DG. Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide Applied Physics Letters. 70: 1790-1792. DOI: 10.1063/1.118693  0.682
1997 Fauchet PM, Tsybeskov L, Duttagupta SP, Hirschman KD. Stable photoluminescence and electroluminescence from porous silicon Thin Solid Films. 297: 254-260. DOI: 10.1016/S0040-6090(96)09438-2  0.646
1997 Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM, Moore KL, Hall DG. Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide Applied Physics Letters. 70: 1790-1792.  0.475
1997 Tsybeskov L, Moore KL, Fauchet PM, Hall DG. Light emission from intrinsic and doped silicon-rich silicon oxide: from the visible to 1.6 μm Materials Research Society Symposium - Proceedings. 452: 523-528.  0.535
1997 Hirschman KD, Tsybeskov L, Duttagupta SP, Fauchet PM. Integration of silicon electroluminescent devices with silicon microelectronics Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 11: 452-453.  0.561
1997 Tsybeskov L, Hirschman KD, Moore LF, Fauchet PM, Calcott PDJ. Preparation and characterization of the active layer for an LED based on oxidized porous silicon Materials Research Society Symposium - Proceedings. 452: 687-692.  0.411
1996 Tsybeskov L, Hiirschman KD, Moore LF, Fauchet PM, Calcott PDJ. Preparation and Characterization of the Active Layer for an Led Based on Oxidized Porous Silicon Mrs Proceedings. 452. DOI: 10.1557/Proc-452-687  0.641
1996 Tsybeskov L, Moore KL, Fauchet PM, Hall DG. Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM Mrs Proceedings. 452. DOI: 10.1557/Proc-452-523  0.713
1996 Moore KL, Tsybeskov L, Fauchet PM, Hall DG. Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon Mrs Proceedings. 452. DOI: 10.1557/Proc-452-517  0.7
1996 Tsybeskov L, Peng C, Fauchet PM, Gu Q, Schiff EA. Drift mobility measurements in porous silicon Materials Research Society Symposium - Proceedings. 420: 825-829. DOI: 10.1557/Proc-420-825  0.556
1996 Tsybeskov L, Moore KL, Duttagupta SP, Hirschman KD, Hall DG, Fauchet PM. A Si‐based light‐emitting diode with room‐temperature electroluminescence at 1.1 eV Applied Physics Letters. 69: 3411-3413. DOI: 10.1063/1.117276  0.687
1996 Hirschman KD, Tsybeskov L, Duttagupta SP, Fauchet PM. Silicon-based visible light-emitting devices integrated into microelectronic circuits Nature. 384: 338-341. DOI: 10.1038/384338A0  0.624
1996 Tsybeskov L, Moore KL, Duttagupta SP, Hirschman KD, Hall DG, Fauchet PM. A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV Applied Physics Letters. 69: 3411-3413.  0.513
1996 Tsybeskov L, Moore KL, Hall DG, Fauchet PM. Intrinsic band-edge photoluminescence from silicon clusters at room temperature Physical Review B - Condensed Matter and Materials Physics. 54.  0.428
1996 Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM. LED for silicon-based integrated optoelectronics Annual Device Research Conference Digest. 150-151.  0.608
1995 Duttagupta SP, Peng C, Tsybeskov L, Fauchet PM. Manufacture of submicron light-emitting porous silicon areas for miniature LEDs Materials Research Society Symposium - Proceedings. 380: 73-78. DOI: 10.1557/Proc-380-73  0.675
1995 Tsybeskov L, Duttagupta SP, Fauchet PM. Photoluminescence and electroluminescence in partially oxidized porous silicon Materials Research Society Symposium - Proceedings. 358: 683-688. DOI: 10.1557/Proc-358-683  0.681
1995 Rehm JM, McLendon GL, Tsybeskov L, Fauchet PM. Investigation of chemical adsorbate effects on blue and red emitting porous silicon samples Materials Research Society Symposium - Proceedings. 358: 393-398. DOI: 10.1557/Proc-358-393  0.634
1995 Von Behren J, Tsybeskov L, Fauchet PM. Preparation, properties and applications of free-standing porous silicon films Materials Research Society Symposium - Proceedings. 358: 333-338. DOI: 10.1557/Proc-358-333  0.542
1995 von Behren J, Ucer KB, Tsybeskov L, Vandyshev JV, Fauchet PM. Properties of ultrathin films of porous silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1225-1229. DOI: 10.1116/1.588241  0.541
1995 Fauchet PM, Tsybeskov L, Peng C, Duttagupta SP, von Behren J, Kostoulas Y, Vandyshev JMV, Hirschman KD. Light-Emitting Porous Silicon: Materials Science, Properties, and Device Applications Ieee Journal On Selected Topics in Quantum Electronics. 1: 1126-1139. DOI: 10.1109/2944.488691  0.641
1995 Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM. Stable and efficient electroluminescence from a porous silicon-based bipolar device Applied Physics Letters. 2058. DOI: 10.1063/1.116302  0.693
1995 Rehm JM, McLendon GL, Tsybeskov L, Fauchet PM. How methanol affects the surface of blue and red emitting porous silicon Applied Physics Letters. 66: 3651. DOI: 10.1063/1.114135  0.583
1995 Von Behren J, Tsybeskov L, Fauchet PM. Preparation and characterization of ultrathin porous silicon films Applied Physics Letters. 1662. DOI: 10.1063/1.113885  0.621
1995 Hummel RE, Ludwig MH, Chang SS, Fauchet PM, Vandyshev JV, Tsybeskov L. Time-resolved photoluminescence measurements in spark-processed blue and green emitting silicon Solid State Communications. 95: 553-557. DOI: 10.1016/0038-1098(95)00224-3  0.719
1995 Rehm JM, McLendon GL, Tsybeskov L, Fauchet PM. How methanol affects the surface of blue and red emitting porous silicon Applied Physics Letters. 66: 3651.  0.369
1995 Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM. Stable and efficient electroluminescence from a porous silicon-based bipolar device Applied Physics Letters. 2058.  0.654
1995 Duttagupta SP, Tsybeskov L, Fauchet PM, Ettedgui E, Gao Y. Post-anodization implantation and CVD techniques for passivation of porous silicon Materials Research Society Symposium - Proceedings. 358: 381-386.  0.321
1994 Duttagupta SP, Tsybeskov L, Fauchet PM, Ettedgui E, Gao Y. Post-Anodization Implantation and CVD Techniques for Passivation of Porous Silicon Mrs Proceedings. 358. DOI: 10.1557/Proc-358-381  0.653
1994 Tsybeskov L, Vandyshev JV, Fauchet PM. Blue emission in porous silicon: Oxygen-related photoluminescence Physical Review B. 49: 7821-7824. DOI: 10.1103/Physrevb.49.7821  0.594
1994 Tsybeskov L, Fauchet PM. Correlation between photoluminescence and surface species in porous silicon: Low-temperature annealing Applied Physics Letters. 64: 1983-1985. DOI: 10.1063/1.111714  0.646
1994 Peng C, Tsybeskov L, Duttagupta SP, Kurinec SK, Fauchet PM. Porous silicon light emitting diodes Ieee Leos Annual Meeting - Proceedings. 2: 15-16.  0.308
1993 Tsybeskov L, Peng C, Duttagupta S, Ettedgui E, Gao Y, Fauchet P, Carver G. Comparative Study of Light-Emitting Porous Silicon Anodized with Light Assistance and in the Dark Mrs Proceedings. 298. DOI: 10.1557/Proc-298-307  0.657
1993 Fauchet P, Ettedgui E, Raisanen A, Brillson L, Seiferth F, Kurinec S, Gao Y, Peng C, Tsybeskov L. Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon? Mrs Proceedings. 298. DOI: 10.1557/Proc-298-271  0.589
1993 Peng C, Tsybeskov L, Fauchet PM, Seiferth F, Kurinec SK, Rehm JM, McLendon GL. Light-emitting porous silicon after standard microelectronic processing Materials Research Society Symposium Proceedings. 298: 179-184. DOI: 10.1557/Proc-298-179  0.582
1993 Peng C, Tsybeskov L, Fauchet PM. Luminescence properties of porous silicon Materials Research Society Symposium Proceedings. 283: 121-126. DOI: 10.1557/Proc-283-121  0.615
1993 Tsybeskov L, Peng C, Duttagupta SP, Ettedgui E, Gao Y, Fauchet PM, Carver GE. Comparative study of light-emitting porous silicon anodized with light assistance and in the dark Materials Research Society Symposium Proceedings. 298: 307-311.  0.44
1993 Fauchet PM, Ettedgui E, Raisanen A, Brillson LJ, Seiferth F, Kurinec SK, Gao Y, Peng C, Tsybeskov L. Can oxidation and other treatments help us understand the nature of light-emitting porous silicon? Materials Research Society Symposium Proceedings. 298: 271-276.  0.327
1992 Ettedgui E, Peng C, Tsybeskov L, Gao Y, Fauchet PM, Carver GE, Mizes HA. High Spatial Resolution Mapping of Porous Silicon Mrs Proceedings. 283. DOI: 10.1557/Proc-283-173  0.541
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