| Year |
Citation |
Score |
| 2023 |
Haseman MS, Gao H, Duddella K, Brillson LJ. Electric Field Manipulation of Defects and Schottky Barrier Control inside ZnO Nanowires. Acs Applied Materials & Interfaces. PMID 37311023 DOI: 10.1021/acsami.3c02132 |
0.389 |
|
| 2020 |
Zhu T, O’Hara DJ, Noesges BA, Zhu M, Repicky JJ, Brenner MR, Brillson LJ, Hwang J, Gupta JA, Kawakami RK. Coherent growth and characterization of van der Waals
1T−VSe2
layers on GaAs(111)B using molecular beam epitaxy Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.084002 |
0.387 |
|
| 2020 |
Noesges BA, Zhu T, Repicky JJ, Yu S, Yang F, Gupta JA, Kawakami RK, Brillson LJ. Chemical migration and dipole formation at van der Waals interfaces between magnetic transition metal chalcogenides and topological insulators Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.054001 |
0.396 |
|
| 2020 |
Kim TH, Paudel TR, Green RJ, Song K, Lee H, Choi S, Irwin J, Noesges B, Brillson LJ, Rzchowski MS, Sawatzky GA, Tsymbal EY, Eom CB. Strain-driven disproportionation at a correlated oxide metal-insulator transition Physical Review B. 101. DOI: 10.1103/Physrevb.101.121105 |
0.355 |
|
| 2020 |
Gao H, Muralidharan S, Karim R, White SM, Cao LR, Leedy K, Zhao H, Look DC, Brillson LJ. Neutron Irradiation and Forming Gas Anneal Impact on β-Ga2O3 Deep Level Defects Journal of Physics D. 53: 465102. DOI: 10.1088/1361-6463/Aba92F |
0.323 |
|
| 2020 |
Foster GM, Koehler A, Ebrish M, Gallagher J, Anderson T, Noesges B, Brillson L, Gunning B, Hobart KD, Kub F. Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments Applied Physics Letters. 117: 82103. DOI: 10.1063/5.0021153 |
0.405 |
|
| 2020 |
Haseman MS, Noesges BA, Shields S, Cetnar JS, Reed AN, Al-Atabi HA, Edgar JH, Brillson LJ. Cathodoluminescence and x-ray photoelectron spectroscopy of ScN: Dopant, defects, and band structure Apl Materials. 8: 081103. DOI: 10.1063/5.0019533 |
0.47 |
|
| 2020 |
Haseman MS, Karim MR, Ramdin D, Noesges BA, Feinberg E, Jayatunga BHD, Lambrecht WRL, Zhu M, Hwang J, Kash K, Zhao H, Brillson LJ. Deep level defects and cation sublattice disorder in ZnGeN2 Journal of Applied Physics. 127: 135703. DOI: 10.1063/1.5141335 |
0.348 |
|
| 2020 |
Gao H, Sahu S, Randall CA, Brillson LJ. Direct, spatially resolved observation of defect states with electromigration and degradation of single crystal SrTiO3 Journal of Applied Physics. 127: 094105. DOI: 10.1063/1.5130892 |
0.368 |
|
| 2020 |
Walker MJ, Jarry A, Pronin N, Ballard J, Rubloff GW, Brillson LJ. Nanoscale depth and lithiation dependence of V2O5 band structure by cathodoluminescence spectroscopy Journal of Materials Chemistry. 8: 11800-11810. DOI: 10.1039/D0Ta03204B |
0.408 |
|
| 2020 |
Jarry A, Walker M, Theodoru S, Brillson LJ, Rubloff GW. Elucidating structural transformations in LixV2O5 electrochromic thin films by multimodal spectroscopies Chemistry of Materials. 32: 7226-7236. DOI: 10.1021/Acs.Chemmater.0C01478 |
0.309 |
|
| 2019 |
Brillson L, Cox J, Gao H, Foster G, Ruane W, Jarjour A, Allen M, Look D, von Wenckstern H, Grundmann M. Native Point Defect Measurement and Manipulation in ZnO Nanostructures. Materials (Basel, Switzerland). 12. PMID 31336831 DOI: 10.3390/Ma12142242 |
0.484 |
|
| 2018 |
Cox JW, Foster GM, Jarjour A, von Wenckstern H, Grundmann M, Brillson LJ. Defect Manipulation To Control ZnO Micro-/Nanowire-Metal Contacts. Nano Letters. PMID 30384614 DOI: 10.1021/Acs.Nanolett.8B02892 |
0.49 |
|
| 2018 |
Lee H, Campbell N, Lee J, Asel TJ, Paudel TR, Zhou H, Lee JW, Noesges B, Seo J, Park B, Brillson LJ, Oh SH, Tsymbal EY, Rzchowski MS, Eom CB. Direct observation of a two-dimensional hole gas at oxide interfaces. Nature Materials. PMID 29403056 DOI: 10.1038/S41563-017-0002-4 |
0.431 |
|
| 2018 |
Lee D, Wang H, Noesges BA, Asel TJ, Pan J, Lee J, Yan Q, Brillson LJ, Wu X, Eom C. Identification of a functional point defect in
SrTiO3 Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.060403 |
0.318 |
|
| 2018 |
Pinchuk IV, Asel TJ, Franson A, Zhu T, Lu Y, Brillson LJ, Johnston-Halperin E, Gupta JA, Kawakami RK. Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy Apl Materials. 6: 086103. DOI: 10.1063/1.5041273 |
0.348 |
|
| 2018 |
Jensen IJT, Johansen KM, Zhan W, Venkatachalapathy V, Brillson L, Kuznetsov AY, Prytz Ø. Bandgap and band edge positions in compositionally graded ZnCdO Journal of Applied Physics. 124: 15302. DOI: 10.1063/1.5036710 |
0.389 |
|
| 2018 |
Asel TJ, Yanchenko E, Yang X, Jiang S, Krymowski K, Wang Y, Trout A, McComb DW, Windl W, Goldberger JE, Brillson LJ. Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane Applied Physics Letters. 113: 061110. DOI: 10.1063/1.5034460 |
0.427 |
|
| 2018 |
Gao H, Muralidharan S, Pronin N, Karim MR, White SM, Asel T, Foster G, Krishnamoorthy S, Rajan S, Cao LR, Higashiwaki M, von Wenckstern H, Grundmann M, Zhao H, Look DC, ... Brillson LJ, et al. Optical signatures of deep level defects in Ga2O3 Applied Physics Letters. 112: 242102. DOI: 10.1063/1.5026770 |
0.442 |
|
| 2018 |
Brillson LJ, Foster GM, Cox J, Ruane WT, Jarjour AB, Gao H, Wenckstern Hv, Grundmann M, Wang B, Look DC, Hyland A, Allen MW. Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices Journal of Electronic Materials. 47: 4980-4986. DOI: 10.1007/S11664-018-6214-9 |
0.462 |
|
| 2018 |
Jarjour A, Cox JW, Ruane WT, Wenckstern HV, Grundmann M, Brillson LJ. Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach Annalen Der Physik. 530: 1700335. DOI: 10.1002/Andp.201700335 |
0.374 |
|
| 2017 |
Young JR, Chilcote M, Barone M, Xu J, Katoch J, Luo YK, Mueller S, Asel TJ, Fullerton-Shirey SK, Kawakami R, Gupta JA, Brillson LJ, Johnston-Halperin E. Uniform large-area growth of nanotemplated high-quality monolayer MoS2 Applied Physics Letters. 110: 263103. DOI: 10.1063/1.4989851 |
0.4 |
|
| 2017 |
Foster GM, Gao H, Mackessy G, Hyland AM, Allen MW, Wang B, Look DC, Brillson LJ. Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers Applied Physics Letters. 111: 101604. DOI: 10.1063/1.4989539 |
0.466 |
|
| 2017 |
Brillson LJ, Ruane WT, Gao H, Zhang Y, Luo J, Wenckstern Hv, Grundmann M. Spatially-resolved cathodoluminescence spectroscopy of ZnO defects Materials Science in Semiconductor Processing. 57: 197-209. DOI: 10.1016/J.Mssp.2016.10.032 |
0.382 |
|
| 2016 |
Foster GM, Faber G, Yao YF, Yang CC, Heller ER, Look DC, Brillson LJ. Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions Applied Physics Letters. 109. DOI: 10.1063/1.4963888 |
0.42 |
|
| 2016 |
Gao H, Asel TJ, Cox JW, Zhang Y, Luo J, Brillson LJ. Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy Journal of Applied Physics. 120. DOI: 10.1063/1.4962316 |
0.378 |
|
| 2016 |
Ruane WT, Johansen KM, Leedy KD, Look DC, Von Wenckstern H, Grundmann M, Farlow GC, Brillson LJ. Defect segregation and optical emission in ZnO nano- and microwires Nanoscale. 8: 7631-7637. DOI: 10.1039/C5Nr08248J |
0.468 |
|
| 2016 |
Jiang S, Krymowski K, Asel T, Arguilla MQ, Cultrara ND, Yanchenko E, Yang X, Brillson LJ, Windl W, Goldberger JE. Tailoring the Electronic Structure of Covalently Functionalized Germanane via the Interplay of Ligand Strain and Electronegativity Chemistry of Materials. 28: 8071-8077. DOI: 10.1021/Acs.Chemmater.6B04309 |
0.325 |
|
| 2015 |
Asel TJ, Gao H, Heinl TJ, Adkins D, Woodward PM, Hoffman J, Bhattacharya A, Brillson LJ. Near-nanoscale-resolved energy band structure of LaNiO3/La2/3Sr1/3MnO3/SrTiO3 heterostructures and their interfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4922270 |
0.477 |
|
| 2015 |
Wang J, Mulligan P, Brillson L, Cao LR. Review of using gallium nitride for ionizing radiation detection Applied Physics Reviews. 2. DOI: 10.1063/1.4929913 |
0.359 |
|
| 2015 |
Zeng ZQ, Podpirka A, Kirchoefer SW, Asel TJ, Brillson LJ. Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO<inf>3</inf> Applied Physics Letters. 106. DOI: 10.1063/1.4919891 |
0.434 |
|
| 2015 |
Perkins J, Foster GM, Myer M, Mehra S, Chauveau JM, Hierro A, Redondo-Cubero A, Windl W, Brillson LJ. Impact of Mg content on native point defects in MgxZn1-xO (0 ≤ x ≤ 0.56) Apl Materials. 3. DOI: 10.1063/1.4915491 |
0.45 |
|
| 2015 |
Foster GM, Perkins J, Myer M, Mehra S, Chauveau JM, Hierro A, Redondo-Cubero A, Windl W, Brillson LJ. Native point defect energies, densities, and electrostatic repulsion across (Mg,Zn)O alloys Physica Status Solidi (a) Applications and Materials Science. 212: 1448-1454. DOI: 10.1002/Pssa.201532285 |
0.32 |
|
| 2014 |
Rutkowski MM, McNicholas K, Zeng ZQ, Tuomisto F, Brillson LJ. Optical identification of oxygen vacancy formation at SrTiO 3-(Ba,Sr)TiO3 heterostructures Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/25/255303 |
0.812 |
|
| 2014 |
Katz EJ, Lin CH, Qiu J, Zhang Z, Mishra UK, Cao L, Brillson LJ. Neutron irradiation effects on metal-gallium nitride contacts Journal of Applied Physics. 115. DOI: 10.1063/1.4869552 |
0.6 |
|
| 2013 |
Rutkowski MM, McNicholas KM, Zeng Z, Brillson LJ. Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system. The Review of Scientific Instruments. 84: 065105. PMID 23822376 DOI: 10.1063/1.4804195 |
0.787 |
|
| 2013 |
Zhang Z, Look DC, Schifano R, Johansen KM, Svensson BG, Brillson LJ. Process dependence of H passivation and doping in H-implanted ZnO Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/5/055107 |
0.38 |
|
| 2013 |
Qiu J, Katz E, Lin CH, Cao L, Brillson LJ. The effect of thermal reactor neutron irradiation on semi-insulating GaN Radiation Effects and Defects in Solids. 168: 924-932. DOI: 10.1080/10420150.2013.792819 |
0.616 |
|
| 2013 |
Balaz S, Zeng Z, Brillson LJ. Heterojunction band offsets and dipole formation at BaTiO 3/SrTiO3 interfaces Journal of Applied Physics. 114. DOI: 10.1063/1.4829695 |
0.453 |
|
| 2013 |
Lin CH, Katz EJ, Qiu J, Zhang Z, Mishra UK, Cao L, Brillson LJ. Neutron irradiation effects on gallium nitride-based Schottky diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826091 |
0.65 |
|
| 2013 |
Zhang Z, Quemener V, Lin CH, Svensson BG, Brillson LJ. Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO Applied Physics Letters. 103. DOI: 10.1063/1.4818712 |
0.441 |
|
| 2013 |
Rosenberg RA, Choi Y, Vijayalakshmi K, Kareev M, Tchakhalian J, Balaz S, Brillson LJ. Depth resolved studies of SrTiO3 defects using x-ray excited optical luminescence and cathodoluminescence Applied Physics Letters. 102. DOI: 10.1063/1.4807117 |
0.428 |
|
| 2013 |
Lee CH, Podraza NJ, Zhu Y, Berger RF, Shen S, Sestak M, Collins RW, Kourkoutis LF, Mundy JA, Wang H, Mao Q, Xi X, Brillson LJ, Neaton JB, Muller DA, et al. Effect of reduced dimensionality on the optical band gap of SrTiO 3 Applied Physics Letters. 102. DOI: 10.1063/1.4798241 |
0.354 |
|
| 2013 |
Balaz S, Porter SH, Woodward PM, Brillson LJ. Electronic structure of tantalum oxynitride perovskite photocatalysts Chemistry of Materials. 25: 3337-3343. DOI: 10.1021/Cm401815W |
0.386 |
|
| 2013 |
Brillson LJ. Surfaces and Interfaces of Zinc Oxide Semiconductors and Semimetals. 88: 105-157. DOI: 10.1016/B978-0-12-396489-2.00004-7 |
0.461 |
|
| 2013 |
Doutt DR, Balaz S, Isabella L, Look DC, Leedy KD, Brillson LJ. Role of native point defects and Ga diffusion on electrical properties of degenerate Ga-doped ZnO Physica Status Solidi (B) Basic Research. 250: 2114-2117. DOI: 10.1002/Pssb.201200945 |
0.802 |
|
| 2013 |
Brillson LJ, Zhang Z, Doutt DR, Look DC, Svensson BG, Kuznetsov AY, Tuomisto F. Interplay of dopants and native point defects in ZnO Physica Status Solidi (B) Basic Research. 250: 2110-2113. DOI: 10.1002/Pssb.201200943 |
0.802 |
|
| 2012 |
Brillson LJ, Dong Y, Tuomisto F, Svensson BG, Kuznetsov AY, Doutt D, Mosbacker HL, Cantwell G, Zhang J, Song JJ, Fang ZQ, Look DC. Interplay of native point defects with ZnO Schottky barriers and doping Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4732531 |
0.845 |
|
| 2012 |
Lin CH, Merz TA, Doutt DR, Joh J, Del Alamo JA, Mishra UK, Brillson LJ. Strain and temperature dependence of defect formation at AlGaN/GaN high-electron-mobility transistors on a nanometer scale Ieee Transactions On Electron Devices. 59: 2667-2674. DOI: 10.1109/Ted.2012.2206595 |
0.829 |
|
| 2012 |
Zhang Z, Knutsen KE, Merz T, Kuznetsov AY, Svensson BG, Brillson LJ. Control of Li configuration and electrical properties of Li-doped ZnO Journal of Physics D. 45: 375301. DOI: 10.1088/0022-3727/45/37/375301 |
0.459 |
|
| 2012 |
Brillson LJ. Applications of depth-resolved cathodoluminescence spectroscopy Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/18/183001 |
0.418 |
|
| 2012 |
Zhang Z, Knutsen KE, Merz T, Kuznetsov AY, Svensson BG, Brillson LJ. Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO Applied Physics Letters. 100. DOI: 10.1063/1.3679708 |
0.421 |
|
| 2012 |
Brillson LJ, Dong Y, Tuomisto F, Svensson BG, Kuznetsov AY, Doutt D, Mosbacker HL, Cantwell G, Zhang J, Song JJ, Fang ZQ, Look DC. Native point defects at ZnO surfaces, interfaces and bulk films Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1566-1569. DOI: 10.1002/Pssc.201100538 |
0.828 |
|
| 2012 |
Brillson LJ. Surfaces and Interfaces of Electronic Materials Surfaces and Interfaces of Electronic Materials. DOI: 10.1002/9783527665709 |
0.308 |
|
| 2011 |
Katz EJ, Zhang Z, Hughes HL, Chung KB, Lucovsky G, Brillson LJ. Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 for device-tolerant electronics Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 0110271-0110277. DOI: 10.1116/1.3543712 |
0.473 |
|
| 2011 |
Look DC, Leedy KD, Vines L, Svensson BG, Zubiaga A, Tuomisto F, Doutt DR, Brillson LJ. Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.115202 |
0.793 |
|
| 2011 |
Shen S, Liu Y, Gordon RG, Brillson LJ. Impact of ultrathin Al2O3 diffusion barriers on defects in high- k LaLuO3 on Si Applied Physics Letters. 98. DOI: 10.1063/1.3583462 |
0.49 |
|
| 2011 |
Brillson LJ, Lu Y. ZnO Schottky barriers and Ohmic contacts Journal of Applied Physics. 109. DOI: 10.1063/1.3581173 |
0.481 |
|
| 2011 |
Liu Y, Shen S, Brillson LJ, Gordon RG. Impact of ultrathin Al2 O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices Applied Physics Letters. 98. DOI: 10.1063/1.3563713 |
0.449 |
|
| 2011 |
Merz TA, Doutt DR, Bolton T, Dong Y, Brillson LJ. Nanostructure growth-induced defect formation and band bending at ZnO surfaces Surface Science. 605. DOI: 10.1016/J.Susc.2010.12.021 |
0.826 |
|
| 2010 |
Rutkowski M, Hauser AJ, Yang FY, Ricciardo R, Meyer T, Woodward PM, Holcombe A, Morris PA, Brillson LJ. X-ray photoemission spectroscopy of Sr2 FeMoO6 film stoichiometry and valence state Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 1240-1244. DOI: 10.1116/1.3478677 |
0.324 |
|
| 2010 |
Dong Y, Tuomisto F, Svensson BG, Kuznetsov AY, Brillson LJ. Vacancy defect and defect cluster energetics in ion-implanted ZnO Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.081201 |
0.415 |
|
| 2010 |
Gupta SK, Wu H, Kwak KJ, Casal P, Nicholson III TR, Wen X, Anisha R, Bhushan B, Berger PR, Lu W, Brillson LJ, Lee SC. Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces Journal of Physics D: Applied Physics. 44: 034010. DOI: 10.1088/0022-3727/44/3/034010 |
0.32 |
|
| 2010 |
Lin CH, Doutt DR, Mishra UK, Merz TA, Brillson LJ. Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale Applied Physics Letters. 97. DOI: 10.1063/1.3521392 |
0.816 |
|
| 2010 |
Tadjer MJ, Feygelson TI, Hobart KD, Caldwell JD, Anderson TJ, Butler JE, Eddy CR, Gaskill DK, Lew KK, Vanmil BL, Myers-Ward RL, Kub FJ, Sollenberger G, Brillson L. On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC Applied Physics Letters. 97. DOI: 10.1063/1.3515858 |
0.36 |
|
| 2010 |
Dong Y, Fang ZQ, Look DC, Doutt DR, Cantwell G, Zhang J, Song JJ, Brillson LJ. Defects at oxygen plasma cleaned ZnO polar surfaces Journal of Applied Physics. 108. DOI: 10.1063/1.3514102 |
0.821 |
|
| 2009 |
Zhang J, Rutkowski M, Martin LW, Conry T, Ramesh R, Ihlefeld JF, Melville A, Schlom DG, Brillson LJ. Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2012-2014. DOI: 10.1116/1.3130152 |
0.454 |
|
| 2009 |
Dong Y, Fang ZQ, Look DC, Doutt DR, Hetzer MJ, Brillson LJ. Polarity-related asymetry at ZnO surfaces and metal interfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1710-1716. DOI: 10.1116/1.3119681 |
0.821 |
|
| 2009 |
Fang Z, Claflin B, Look DC, Dong YF, Brillson L. Metal Contacts on Bulk ZnO Crystal Treated with Remote Oxygen Plasma Journal of Vacuum Science & Technology B. 27: 1774-1779. DOI: 10.1116/1.3095814 |
0.362 |
|
| 2009 |
Brillson LJ, Dong Y, Zhang J, Walsh S, Mosbacker HL, Doutt D, Hetzer M. Depth-resolved cathodoluminescence spectroscopy as a probe of defect structure in oxides 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378171 |
0.742 |
|
| 2009 |
Lin CH, Merz TA, Doutt DR, Hetzer MJ, Joh J, Del Alamo JA, Mishra UK, Brillson LJ. Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors Applied Physics Letters. 95. DOI: 10.1063/1.3189102 |
0.82 |
|
| 2009 |
Zhang J, Doutt D, Merz T, Chakhalian J, Kareev M, Liu J, Brillson LJ. Depth-resolved subsurface defects in chemically etched SrTiO3 Applied Physics Letters. 94. DOI: 10.1063/1.3093671 |
0.816 |
|
| 2009 |
Doutt D, Mosbacker HL, Cantwell G, Zhang J, Song JJ, Brillson LJ. Impact of near-surface defects and morphology on ZnO luminescence Applied Physics Letters. 94. DOI: 10.1063/1.3077015 |
0.819 |
|
| 2009 |
Brillson LJ, Mosbacker HL, Doutt DL, Dong Y, Fang ZQ, Look DC, Cantwell G, Zhang J, Song JJ. Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces Superlattices and Microstructures. 45: 206-213. DOI: 10.1016/J.Spmi.2008.11.008 |
0.813 |
|
| 2009 |
Brillson LJ, Dong Y, Doutt D, Look DC, Fang ZQ. Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation Physica B: Condensed Matter. 404: 4768-4773. DOI: 10.1016/J.Physb.2009.08.151 |
0.835 |
|
| 2008 |
Doutt DR, Zgrabik C, Mosbacker HL, Brillson LJ. Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1477-1482. DOI: 10.1116/1.2919158 |
0.828 |
|
| 2008 |
Zhang J, Walsh S, Brooks C, Schlom DG, Brillson LJ. Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1466-1471. DOI: 10.1116/1.2918315 |
0.455 |
|
| 2008 |
Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ. Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 232-243. DOI: 10.1116/1.2830692 |
0.785 |
|
| 2008 |
Smith PE, Lueck M, Ringel SA, Brillson LJ. Atomic diffusion and interface electronic structure at In 0.49Ga0.51P/GaAs heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 89-95. DOI: 10.1116/1.2823031 |
0.474 |
|
| 2008 |
Fang ZQ, Claflin B, Look DC, Dong YF, Mosbacker HL, Brillson LJ. Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy Journal of Applied Physics. 104. DOI: 10.1063/1.2978374 |
0.784 |
|
| 2008 |
Dong Y, Fang ZQ, Look DC, Cantwell G, Zhang J, Song JJ, Brillson LJ. Zn- and O-face polarity effects at ZnO surfaces and metal interfaces Applied Physics Letters. 93. DOI: 10.1063/1.2974983 |
0.454 |
|
| 2008 |
Hauser AJ, Zhang J, Mier L, Ricciardo RA, Woodward PM, Gustafson TL, Brillson LJ, Yang FY. Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies Applied Physics Letters. 92. DOI: 10.1063/1.2939101 |
0.399 |
|
| 2008 |
Brillson LJ, Mosbacker HL, Hetzer MJ, Strzhemechny Y, Look DC, Cantwell G, Zhang J, Song JJ. Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces Applied Surface Science. 254: 8000-8004. DOI: 10.1016/J.Apsusc.2008.03.050 |
0.796 |
|
| 2008 |
Dong Y, Brillson LJ. First-principles studies of metal (111)/ZnO{0001} interfaces Journal of Electronic Materials. 37: 743-748. DOI: 10.1007/S11664-007-0295-1 |
0.36 |
|
| 2007 |
Smith PE, Lueck M, Ringel SA, Brillson LJ. Atomic diffusion and electronic structure in Al0.52 In0.48 PGaAs heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1916-1921. DOI: 10.1116/1.2811705 |
0.432 |
|
| 2007 |
Mosbacker HL, El Hage S, Gonzalez M, Ringel SA, Hetzer M, Look DC, Cantwell G, Zhang J, Song JJ, Brillson LJ. Role of subsurface defects in metal- ZnO (000 1-) Schottky barrier formation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1405-1411. DOI: 10.1116/1.2756543 |
0.807 |
|
| 2007 |
Walsh S, Fang L, Schaeffer JK, Brillson LJ. Process-dependent electronic states at Mo/hafnium oxide/Si interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1261-1266. DOI: 10.1116/1.2721573 |
0.44 |
|
| 2007 |
Gao M, Brillson LJ. Application of high spatial resolution scanning work function spectroscopy to semiconductor surfaces and interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 334-342. DOI: 10.1116/1.2464117 |
0.491 |
|
| 2007 |
Brillson LJ. Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 943-949. DOI: 10.1116/1.2432348 |
0.465 |
|
| 2007 |
Mosbacker HL, Zgrabik C, Hetzer MJ, Swain A, Look DC, Cantwell G, Zhang J, Song JJ, Brillson LJ. Thermally driven defect formation and blocking layers at metal-ZnO interfaces Applied Physics Letters. 91. DOI: 10.1063/1.2772664 |
0.795 |
|
| 2007 |
Ewing DJ, Porter LM, Wahab Q, Ma X, Sudharshan TS, Tumakha S, Gao M, Brillson LJ. Inhomogeneities in Ni4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states Journal of Applied Physics. 101. DOI: 10.1063/1.2745436 |
0.812 |
|
| 2007 |
Brillson LJ, Mosbacker HL, Hetzer MJ, Strzhemechny Y, Jessen GH, Look DC, Cantwell G, Zhang J, Song JJ. Dominant effect of near-interface native point defects on ZnO Schottky barriers Applied Physics Letters. 90. DOI: 10.1063/1.2711536 |
0.825 |
|
| 2007 |
Walsh S, Fang L, Schaeffer JK, Weisbrod E, Brillson LJ. Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures Applied Physics Letters. 90. DOI: 10.1063/1.2435585 |
0.398 |
|
| 2007 |
Gao M, Tsukimoto S, Goss SH, Tumakha SP, Onishi T, Murakami M, Brillson LJ. Role of interface layers and localized states in TiAl-based Ohmic contacts to p-type 4H-SiC Journal of Electronic Materials. 36: 277-284. DOI: 10.1007/S11664-006-0078-0 |
0.779 |
|
| 2006 |
Ewing DJ, Wahab Q, Tumakha SP, Brillson LJ, Ma XY, Sudarshan TS, Porter LM. A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC Materials Science Forum. 911-914. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.911 |
0.409 |
|
| 2006 |
Tumakha SP, Porter LM, Ewing DJ, Wahab Q, Ma XY, Sudarshan TS, Brillson LJ. Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes Materials Science Forum. 907-910. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.907 |
0.495 |
|
| 2006 |
Gao M, Tumakha SP, Onishi T, Tsukimoto S, Murakami M, Brillson LJ. Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies Materials Science Forum. 891-894. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.891 |
0.464 |
|
| 2006 |
Jeddy S, Zvanut ME, Lassiter BE, Janowski GM, Brillson LJ. Thermal stability of defects in substrates for multiferroic materials Materials Research Society Symposium Proceedings. 966: 265-269. DOI: 10.1557/Proc-0966-T05-04 |
0.363 |
|
| 2006 |
Hetzer MJ, Strzhemechny YM, Gao M, Goss S, Contreras MA, Zunger A, Brillson LJ. On microscopic compositional and electrostatic properties of grain boundaries in polycrystalline CuIn 1-xGa xSe 2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1739-1745. DOI: 10.1116/1.2209995 |
0.317 |
|
| 2006 |
Gao M, Bradley ST, Cao Y, Jena D, Lin Y, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Compositional modulation and optical emission in AlGaN epitaxial films Journal of Applied Physics. 100. DOI: 10.1063/1.2382622 |
0.787 |
|
| 2006 |
Walker DE, Fitch RC, Gillespie JK, Jessen GH, Cassity PD, Breedlove JR, Brillson LJ. Controlled gate surface processing of AlGaN/GaN high electron mobility transistors Applied Physics Letters. 89. DOI: 10.1063/1.2378559 |
0.748 |
|
| 2006 |
Brillson LJ. Low energy CL spectroscopy of interfaces and nanostructures Microscopy and Microanalysis. 12: 172-173. DOI: 10.1017/S1431927606069613 |
0.356 |
|
| 2006 |
Walker DE, Gao M, Chen X, Schaff WJ, Brillson LJ. Schottky barrier formation at nonpolar Au/GaN epilayer interfaces Journal of Electronic Materials. 35: 581-586. DOI: 10.1007/S11664-006-0103-3 |
0.53 |
|
| 2006 |
Ewing DJ, Wahab Q, Tumakha S, Brillson LJ, Ma XY, Sudarshan TS, Porter LM. A study of inhomogeneous Schottky diodes on n-type 4H-SiC Materials Science Forum. 527: 911-914. |
0.773 |
|
| 2006 |
Tumakha S, Porter LM, Ewing DJ, Wahab Q, Ma XY, Sudarshan TS, Brillson LJ. Nanoscale deep level defect correlation with Schottky barriers in 4H-SiC/metal diodes Materials Science Forum. 527: 907-910. |
0.804 |
|
| 2005 |
Lee SC, Keener MT, Tokachichu DR, Bhushan B, Barnes PD, Cipriany BR, Gao M, Brillson LJ. Protein binding on thermally grown silicon dioxide Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1856-1865. DOI: 10.1116/1.2006127 |
0.31 |
|
| 2005 |
Smith PE, Goss SH, Gao M, Hudait MK, Lin Y, Ringel SA, Brillson LJ. Atomic diffusion and band lineups at In0.53Ga0.47As -on-InP heterointerfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1832-1837. DOI: 10.1116/1.1949218 |
0.41 |
|
| 2005 |
Tumakha S, Goss SH, Brillson LJ, Okojie RS. Electronic defect states at annealed metal/4H-SiC interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 594-598. DOI: 10.1116/1.1884124 |
0.812 |
|
| 2005 |
Karmarkar AP, White BD, Buttari D, Fleetwood DM, Schrimpf RD, Weller RA, Brillson LJ, Mishra UK. Proton-induced damage in gallium nitride-based schottky diodes Ieee Transactions On Nuclear Science. 52: 2239-2244. DOI: 10.1109/Tns.2005.860668 |
0.401 |
|
| 2005 |
Tumakha S, Ewing DJ, Porter LM, Wahab Q, Ma X, Sudharshan TS, Brillson LJ. Defect-driven inhomogeneities in Ni4H-SiC Schottky barriers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2141719 |
0.811 |
|
| 2005 |
Gao M, Lin Y, Bradley ST, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Spontaneous compositional superlattice and band-gap reduction in Si-doped Al xGa 1-xN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126127 |
0.784 |
|
| 2005 |
Hudait MK, Lin Y, Goss SH, Smith P, Bradley S, Brillson LJ, Johnston SW, Ahrenkiel RK, Ringel SA. Evidence of interface-induced persistent photoconductivity in InP/In 0.53Ga 0.47As/InP double heterostructures grown by molecular-beam epitaxy Applied Physics Letters. 87. DOI: 10.1063/1.1994948 |
0.771 |
|
| 2005 |
Mosbacker HL, Strzhemechny YM, White BD, Smith PE, Look DC, Reynolds DC, Litton CW, Brillson LJ. Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO Applied Physics Letters. 87. DOI: 10.1063/1.1984089 |
0.806 |
|
| 2005 |
Hetzer MJ, Strzhemechny YM, Gao M, Contreras MA, Zunger A, Brillson LJ. Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1906331 |
0.359 |
|
| 2005 |
Bradley ST, Goss SH, Hwang J, Schaff WJ, Brillson LJ. Pre-metallization processing effects on Schottky contacts to AlGaN/GaN heterostructures Journal of Applied Physics. 97. DOI: 10.1063/1.1883719 |
0.806 |
|
| 2005 |
Look DC, Mosbacker HL, Strzhemechny YM, Brillson LJ. Effects of surface conduction on Hall-effect measurements in ZnO Superlattices and Microstructures. 38: 406-412. DOI: 10.1016/J.Spmi.2005.08.013 |
0.787 |
|
| 2005 |
Brillson LJ, Bradley ST, Tumakha SH, Goss SH, Sun XL, Okojie RS, Hwang J, Schaff WJ. Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Applied Surface Science. 244: 257-263. DOI: 10.1016/J.Apsusc.2004.09.172 |
0.827 |
|
| 2005 |
Strzhemechny YM, Mosbacker HL, Goss SH, Look DC, Reynolds DC, Litton CW, Garces NY, Giles NC, Halliburton LE, Niki S, Brillson LJ. Shallow donor generation in ZnO by remote hydrogen plasma Journal of Electronic Materials. 34: 399-403. DOI: 10.1007/S11664-005-0118-1 |
0.758 |
|
| 2004 |
Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P. SiC studied via LEEN and cathodoluminescence spectroscopy Materials Science Forum. 457: 543-548. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.543 |
0.818 |
|
| 2004 |
Sun XL, Bradley ST, Jessen GH, Look DC, Molnar RJ, Brillson LJ. Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2284-2289. DOI: 10.1116/1.1795820 |
0.826 |
|
| 2004 |
Smith PE, Goss SH, Bradley ST, Hudait MK, Lin Y, Ringel SA, Brillson LJ. Atomic layer diffusion and electronic structure at In 0.53Ga 0.47As/InP interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 554-559. DOI: 10.1116/1.1651112 |
0.8 |
|
| 2004 |
Karmarkar AP, Jun B, Fleetwood DM, Schrimpf RD, Weller RA, White BD, Brillson LJ, Mishra UK. Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN Cap layers Ieee Transactions On Nuclear Science. 51: 3801-3806. DOI: 10.1109/Tns.2004.839199 |
0.419 |
|
| 2004 |
Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P. Electron-excited luminescence of SiC surfaces and interfaces Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/17/015 |
0.808 |
|
| 2004 |
Weng X, Goldman RS, Rotberg V, Bataiev N, Brillson LJ. Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs Applied Physics Letters. 85: 2774-2776. DOI: 10.1063/1.1803940 |
0.327 |
|
| 2004 |
Bradley ST, Goss SH, Hwang J, Schaff WJ, Brillson LJ. Surface cleaning and annealing effects on Ni/AlGaN interface atomic composition and Schottky barrier height Applied Physics Letters. 85: 1368-1370. DOI: 10.1063/1.1785287 |
0.818 |
|
| 2004 |
Strzhemechny YM, Mosbacker HL, Look DC, Reynolds DC, Litton CW, Garces NY, Giles NC, Halliburton LE, Niki S, Brillson LJ. Remote hydrogen plasma doping of single crystal ZnO Applied Physics Letters. 84: 2545-2547. DOI: 10.1063/1.1695440 |
0.755 |
|
| 2003 |
Bradley ST, Goss SH, Brillson LJ, Hwang J, Schaff WJ. Deep level defects and doping in high Al mole fraction AlGaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2558-2563. DOI: 10.1116/1.1627331 |
0.794 |
|
| 2003 |
Brillson LJ. Electronic materials and processing: 1979-2003 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21. DOI: 10.1116/1.1599895 |
0.394 |
|
| 2003 |
Hu X, Karmarkar AP, Jun B, Fleetwood DM, Schrimpf RD, Geil RD, Weller RA, White BD, Bataiev M, Brillson LJ, Mishra UK. Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors Ieee Transactions On Nuclear Science. 50: 1791-1796. DOI: 10.1109/Tns.2003.820792 |
0.365 |
|
| 2003 |
Bradley ST, Brillson LJ, Hwang J, Schafff WJ. Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 404-405. DOI: 10.1109/ISDRS.2003.1272155 |
0.806 |
|
| 2003 |
Miller EJ, Schaadt DM, Yu ET, Sun XL, Brillson LJ, Waltereit P, Speck JS. Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy Journal of Applied Physics. 94: 7611-7615. DOI: 10.1063/1.1627460 |
0.4 |
|
| 2003 |
Strzhemechny YM, Nemergut J, Smith PE, Bae J, Look DC, Brillson LJ. Remote hydrogen plasma processing of ZnO single crystal surfaces Journal of Applied Physics. 94: 4256-4262. DOI: 10.1063/1.1606859 |
0.345 |
|
| 2003 |
Jessen GH, Fitch RC, Gillespie JK, Via GD, White BD, Bradley ST, Walker DE, Brillson LJ. Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 485-487. DOI: 10.1063/1.1593829 |
0.816 |
|
| 2003 |
Rockett A, Liao D, Heath JT, Cohen JD, Strzhemechny YM, Brillson LJ, Ramanathan K, Shafarman WN. Near-surface defect distributions in Cu(In,Ga)Se2 Thin Solid Films. 431: 301-306. DOI: 10.1016/S0040-6090(03)00148-2 |
0.472 |
|
| 2003 |
Koide Y, Walker DE, White BD, Brillson LJ, Itoh T, McCreery RL, Murakami M, Kamiyama S, Amano H, Akasaki I. Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN Physica Status Solidi (B) Basic Research. 240: 356-359. DOI: 10.1002/Pssb.200303279 |
0.42 |
|
| 2002 |
Okojie RS, Lukco D, Keys L, Tumakha S, Brillson LJ. Surface morphology and chemistry of 4H- and 6H-SiC after cyclic oxidation Materials Science Forum. 389: 1101-1104. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1101 |
0.779 |
|
| 2002 |
Strzhemechny YM, Nemergut J, Bae J, Look DC, Brillson LJ. Effect of remote hydrogen plasma treatment on ZnO single crystal surfaces Materials Research Society Symposium - Proceedings. 744: 111-116. DOI: 10.1557/Proc-744-M3.9 |
0.427 |
|
| 2002 |
Strzhemechny YM, Smith PE, Bradley ST, Liao DX, Rockett AA, Ramanathan K, Brillson LJ. Near-surface electronic defects and morphology of Culn1-xGaxSe2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2441-2448. DOI: 10.1116/1.1526357 |
0.815 |
|
| 2002 |
Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P. Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 554-560. DOI: 10.1116/1.1451303 |
0.825 |
|
| 2002 |
White BD, Bataiev M, Brillson LJ, Choi BK, Fleetwood DM, Schrimpf RD, Pantelides ST, Dettmer RW, Schaff WJ, Champlain JG, Mishra UK. Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy Ieee Transactions On Nuclear Science. 49: 2695-2701. DOI: 10.1109/Tns.2002.805427 |
0.375 |
|
| 2002 |
Look DC, Jones RL, Sun XL, Brillson LJ, Iii JWA, Park SS, Han J, Molnar RJ, Maslar JE. Electrical and optical properties of GaN/Al2O3 interfaces Journal of Physics: Condensed Matter. 14: 13337-13344. DOI: 10.1088/0953-8984/14/48/386 |
0.395 |
|
| 2002 |
Hwang J, Schaff WJ, Eastman LF, Bradley ST, Brillson LJ, Look DC, Wu J, Walukiewicz W, Furis M, Cartwright AN. Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy Applied Physics Letters. 81: 5192-5194. DOI: 10.1063/1.1534395 |
0.778 |
|
| 2002 |
Brillson LJ, Tumakha S, Jessen GH, Okojie RS, Zhang M, Pirouz P. Thermal and doping dependence of 4H-SiC polytype transformation Applied Physics Letters. 81: 2785-2787. DOI: 10.1063/1.1512816 |
0.813 |
|
| 2002 |
Sun XL, Brillson LJ, Chiang YM, Luo J. Microcathodoluminescence spectroscopy of defects in Bi 2O 3-doped ZnO grains Journal of Applied Physics. 92: 5072-5076. DOI: 10.1063/1.1512688 |
0.435 |
|
| 2002 |
White BD, Brillson LJ, Bataiev M, Fleetwood DM, Schrimpf RD, Choi BK, Pantelides ST. Detection of trap activation by ionizing radiation in SiO 2 by spatially localized cathodoluminescence spectroscopy Journal of Applied Physics. 92: 5729-5734. DOI: 10.1063/1.1512319 |
0.415 |
|
| 2002 |
Koide Y, Walker DE, White BD, Brillson LJ, Murakami M, Kamiyama S, Amano H, Akasaki I. Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN Journal of Applied Physics. 92: 3657-3661. DOI: 10.1063/1.1505988 |
0.4 |
|
| 2002 |
Sun XL, Goss SH, Brillson LJ, Look DC, Molnar RJ. Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy Journal of Applied Physics. 91: 6729-6738. DOI: 10.1063/1.1454187 |
0.488 |
|
| 2002 |
Brillson LJ, Bradley ST, Goss SH, Sun X, Murphy MJ, Schaff WJ, Eastman LF, Look DC, Molnar RJ, Ponce FA, Ikeo N, Sakai Y. Low-energy electron-excited nanoluminescence studies of GaN and related materials Applied Surface Science. 190: 498-507. DOI: 10.1016/S0169-4332(01)00925-4 |
0.818 |
|
| 2002 |
Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS. Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Solid-State Electronics. 46: 1427-1431. DOI: 10.1016/S0038-1101(02)00075-8 |
0.821 |
|
| 2002 |
Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ. 4H-to 30-SiC polytypic transformation during oxidation Materials Science Forum. 389: 451-454. |
0.765 |
|
| 2001 |
Goss SH, Young AP, Brillson LJ, Look DC, Molnar RJ. Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy Materials Research Society Symposium - Proceedings. 639: G3.59.1-G3.59.6. DOI: 10.1557/Proc-639-G3.59 |
0.379 |
|
| 2001 |
Young AP, Brillson LJ, Naoi Y, Tu CW. Chemical composition, morphology, and deep level electronic states of GaN (0001) (1×1) surfaces prepared by indium decapping Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2063-2066. DOI: 10.1116/1.1412656 |
0.35 |
|
| 2001 |
Brillson LJ. Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1762-1768. DOI: 10.1116/1.1394728 |
0.515 |
|
| 2001 |
Goss SH, Parkin SSP, Brillson LJ. Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 1199-1202. DOI: 10.1116/1.1351797 |
0.336 |
|
| 2001 |
Bradley ST, Young AP, Brillson LJ, Murphy MJ, Schaff WJ, Eastman LF. Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement Ieee Transactions On Electron Devices. 48: 412-415. DOI: 10.1109/16.906428 |
0.822 |
|
| 2001 |
Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ. Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation Applied Physics Letters. 79: 3056-3058. DOI: 10.1063/1.1415347 |
0.803 |
|
| 2001 |
Goss SH, Sun XL, Young AP, Brillson LJ, Look DC, Molnar RJ. Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces Applied Physics Letters. 78: 3630-3632. DOI: 10.1063/1.1377858 |
0.508 |
|
| 2001 |
Brillson LJ, Young AP, Jessen GH, Levin TM, Bradley ST, Goss SH, Bae J, Ponce FA, Murphy MJ, Schaff WJ, Eastman LF. Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Applied Surface Science. 175: 442-449. DOI: 10.1016/S0169-4332(01)00098-8 |
0.842 |
|
| 2001 |
Bradley ST, Young AP, Brillson LJ, Murphy MJ, Schaff WJ. Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures Journal of Electronic Materials. 30: 123-128. DOI: 10.1007/S11664-001-0004-4 |
0.818 |
|
| 2001 |
Sun XL, Goss SH, Brillson LJ, Look DC, Molnar RJ. Electronic defect states observed by cathodoluminescence spectroscopy at GaN/sapphire interfaces Physica Status Solidi (B) Basic Research. 228: 441-444. DOI: 10.1002/1521-3951(200111)228:2<441::Aid-Pssb441>3.3.Co;2-P |
0.469 |
|
| 2000 |
Young AP, Brillson LJ. The effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaN/sapphire templates Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300005081 |
0.413 |
|
| 2000 |
Brillson LJ, Young AP, White BD, Schäfer J, Niimi H, Lee YM, Lucovsky G. Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO[sub 2]/Si interfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1737. DOI: 10.1116/1.591463 |
0.437 |
|
| 2000 |
Young AP, Bae J, Brillson LJ, Murphy MJ, Schaff WJ. Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2309-2312. DOI: 10.1116/1.1305283 |
0.504 |
|
| 2000 |
White BD, Brillson LJ, Lee SC, Fleetwood DM, Schrimpf RD, Pantelides ST, Lee Y-, Lucovsky G. Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation Ieee Transactions On Nuclear Science. 47: 2276-2280. DOI: 10.1109/23.903765 |
0.426 |
|
| 2000 |
Brillson L, Young A, Levin T, Jessen G, Schäfer J, Yang Y, Xu S, Cruguel H, Lapeyre G, Ponce F, Naoi Y, Tu C, McKenzie J, Abernathy C. Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces Materials Science and Engineering: B. 75: 218-223. DOI: 10.1016/S0921-5107(00)00367-6 |
0.505 |
|
| 2000 |
Young AP, Goss SH, Brillson LJ, MacKenzie JD, Abernathy CR. Low energy electron excited nanoscale luminescence spectroscopy of erbium doped AlN Journal of Electronic Materials. 29: 311-316. DOI: 10.1007/S11664-000-0069-5 |
0.396 |
|
| 1999 |
Brillson LJ, Young AP, Schäfer J, Niimi H, Lucovsky G. Ultrathin silicon oxide and nitride - Silicon interface states Materials Research Society Symposium - Proceedings. 567: 549-558. DOI: 10.1557/Proc-567-549 |
0.432 |
|
| 1999 |
Levin TM, Jessen GH, Ponce FA, Brillson LJ. Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 2545-2552. DOI: 10.1116/1.591125 |
0.734 |
|
| 1999 |
Levin TM, Young AP, Schäfer J, Brillson LJ, MacKenzie JD, Abernathy CR. Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 3437-3442. DOI: 10.1116/1.582079 |
0.453 |
|
| 1999 |
Young AP, Jones J, Brillson LJ. Low energy cathodoluminescence spectroscopy of etched 6H-SiC surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2692-2695. DOI: 10.1116/1.581931 |
0.49 |
|
| 1999 |
Brillson LJ, Levin TM, Jessen GH, Ponce FA. Localized states at InGaN/GaN quantum well interfaces Applied Physics Letters. 75: 3835-3837. DOI: 10.1063/1.125472 |
0.724 |
|
| 1999 |
Hierro A, Kwon D, Goss SH, Brillson LJ, Ringel SA, Rubini S, Pelucchi E, Franciosi A. Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy Applied Physics Letters. 75: 832-834. DOI: 10.1063/1.124528 |
0.429 |
|
| 1999 |
Brillson LJ, Levin TM, Jessen GH, Young AP, Tu C, Naoi Y, Ponce FA, Yang Y, Lapeyre GJ, MacKenzie JD, Abernathy CR. Defect formation near GaN surfaces and interfaces Physica B: Condensed Matter. 273: 70-74. DOI: 10.1016/S0921-4526(99)00409-3 |
0.771 |
|
| 1999 |
Schäfer J, Young AP, Levin TM, Brillson LJ, Paggel JJ, Vanzetti L, Franciosi A. Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer Journal of Electronic Materials. 28: 881-886. DOI: 10.1007/S11664-999-0214-8 |
0.455 |
|
| 1999 |
Young AP, Schäfer J, Brillson LJ, Yang Y, Xu SH, Cruguel H, Lapeyre GJ, Johnson MAL, Schetzina JF. Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy Journal of Electronic Materials. 28: 308-313. DOI: 10.1007/S11664-999-0032-Z |
0.503 |
|
| 1998 |
Hierro A, Kwon D, Ringel SA, Brillson LJ, Young AP, Franciosi A. Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs Mrs Proceedings. 535. DOI: 10.1557/Proc-535-77 |
0.471 |
|
| 1998 |
Schafer J, Young AP, Brillson LJ, Niimi H, Lucovsky G. Cathodoluminescence studies of Si-SiO2 interfaces prepared by plasma-assisted oxidation and subjected to post-oxidation rapid thermal annealing Materials Research Society Symposium - Proceedings. 525: 151-156. DOI: 10.1557/Proc-525-151 |
0.476 |
|
| 1998 |
Young AP, Aptowitz K, Brillson LJ. Cathodoluminescence Deep Level Spectroscopy of Etched and In-Situ Annealed 6H-SiC Mrs Proceedings. 512: 137. DOI: 10.1557/Proc-512-137 |
0.362 |
|
| 1998 |
Young AP, Schäfer J, Jessen GH, Bandhu R, Brillson LJ, Lucovsky G, Niimi H. Luminescence measurements of sub-oxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces Characterization and Metrology For Ulsi Technology. 449: 293-297. DOI: 10.1063/1.56808 |
0.442 |
|
| 1998 |
Schäfer J, Young AP, Brillson LJ, Niimi H, Lucovsky G. Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon Applied Physics Letters. 73: 791-793. DOI: 10.1063/1.122003 |
0.454 |
|
| 1998 |
Brillson LJ, Yang X, Raisanen AD, Franciosi A, Vanzetti L, Sorba L. Deep level formation and heterojunction band offsets at ZnSe/GaAs interfaces Applied Surface Science. 123: 289-293. DOI: 10.1016/S0169-4332(97)00452-2 |
0.452 |
|
| 1998 |
Young AP, Schäfer J, Jessen GH, Bandhu R, Brillson LJ, Lucovsky G, Niimi H. Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2177-2181. |
0.701 |
|
| 1997 |
Yang X, Law KY, Brillson LJ. Low energy cathodoluminescence spectroscopy of SiO2 nanoparticles Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 880-884. DOI: 10.1116/1.580725 |
0.432 |
|
| 1996 |
Yang X, Brillson LJ, Raisanen AD, Vanzetti L, Bonanni A, Franciosi A, Grundmann M, Bimberg D. Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces Journal of Vacuum Science & Technology B. 14: 2961-2966. DOI: 10.1116/1.588943 |
0.51 |
|
| 1996 |
Yang X, Brillson LJ, Raisanen AD, Vanzetti L, Bonanni A, Franciosi A. Internal photoinjection and deep level luminescence at ZnSe/GaAs heterointerfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 867-871. DOI: 10.1116/1.580405 |
0.455 |
|
| 1995 |
Raisanen AD, Brillson LJ, Vanzetti L, Bonanni A, Franciosi A. Deep level formation at ZnSe/GaAs(100) interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1705-1710. DOI: 10.1116/1.587881 |
0.513 |
|
| 1995 |
Raisanen A, Vanzetti L, Brillson LJ, Sorba L, Franciosi A. Deep levels near “buried” ZnSe/GaAs(100) heterointerfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 690-695. DOI: 10.1116/1.579809 |
0.47 |
|
| 1995 |
Raisanen AD, Brillson LJ, Vanzetti L, Bonanni A, Franciosi A. Atomic diffusion-induced deep levels near ZnSe/GaAs(100) interfaces Applied Physics Letters. 66: 2490. DOI: 10.1063/1.113737 |
0.454 |
|
| 1995 |
Raisanen A, Brillson LJ, Franciosi A, Nicolini R, Vanzetti L, Sorba L. Deep level electronic structure of ZnSe/GaAs heterostructures Journal of Electronic Materials. 24: 163-169. DOI: 10.1007/Bf02659890 |
0.485 |
|
| 1994 |
Goldman RS, Rammohan K, Raisanen A, Goorsky M, Brillson LJ, Rich DH, Wieder HH, Kavanagh KL. Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions Mrs Proceedings. 340: 349-354. DOI: 10.1557/Proc-340-349 |
0.38 |
|
| 1994 |
Raisanen A, Brillson LJ, Goldman RS, Kavanaqh KL, Wieder HH. Strain relaxation induced deep levels in In1-xGaxAs thin films and SiH4 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1050-1053. DOI: 10.1116/1.579283 |
0.469 |
|
| 1994 |
Raisanen A, Brillson LJ, Goldman RS, Kavanagh KL, Wieder HH. Optical detection of misfit dislocation-induced deep levels at InGaAs/GaAs heterojunctions Applied Physics Letters. 64: 3572-3574. DOI: 10.1063/1.111201 |
0.425 |
|
| 1994 |
Brillson LJ. Metal-semiconductor interfaces Surface Science. 299: 909-927. DOI: 10.1016/0039-6028(94)90706-4 |
0.416 |
|
| 1994 |
Brillson LJ, Vitomirov I, Raisanen AD, Chang S, Lin CL, McInturff DT, Kirchner PD, Woodall JM. Deep levels and band bending at GaP(100) and (110) surfaces Surface Science. 303-308. DOI: 10.1016/0039-6028(94)90410-3 |
0.464 |
|
| 1994 |
Raisanen A, Brillson LJ, Goldman RS, Kavanagh KL, Wieder H. Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures Journal of Electronic Materials. 23: 929-933. DOI: 10.1007/Bf02655367 |
0.396 |
|
| 1993 |
Fauchet P, Ettedgui E, Raisanen A, Brillson L, Seiferth F, Kurinec S, Gao Y, Peng C, Tsybeskov L. Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon? Mrs Proceedings. 298. DOI: 10.1557/Proc-298-271 |
0.345 |
|
| 1993 |
Raisanen A, Kirchner PD, Vitomirov IM, Pettit GD, Brillson LJ, Woodall JM. Control of as Diffusion using Ultrathin Metal Passivating Layers at GaAs(100) Surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 1106-1113. DOI: 10.1116/1.578449 |
0.456 |
|
| 1993 |
Vitomirov IM, Raisanen A, Brillson LJ, Lin CL, McInturff DT, Kirchner PD, Woodall JM. Temperature‐dependent composition, ordering, and band bending at GaP(100) surfaces Journal of Vacuum Science and Technology. 11: 841-847. DOI: 10.1116/1.578315 |
0.436 |
|
| 1993 |
Brillson LJ, Vitomirov IM, Raisanen A, Chang S, Viturro RE, Kirchner PD, Pettit GD, Woodall JM. Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies Applied Surface Science. 667-675. DOI: 10.1016/0169-4332(93)90737-V |
0.526 |
|
| 1993 |
Vitomirov IM, Raisanen A, Brillson LJ, Kirchner PD, Pettit GD, Woodall JM. Processing and reconstruction effects on Al-GaAs(100) barrier heights Journal of Electronic Materials. 22: 309-313. DOI: 10.1007/Bf02661382 |
0.523 |
|
| 1992 |
Chang S, Vitomirov IM, Brillson LJ, Mailhiot C, Rioux DF, Kime YJ, Kirchner PD, Pettit GD, Woodall JM. Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces Physical Review B. 45: 13438-13451. PMID 10001430 DOI: 10.1103/Physrevb.45.13438 |
0.454 |
|
| 1992 |
Brillson LJ, Vitomirov IM, Raisanen A, Chang S, Viturro RE, Kirchner PD, Pettit GD, Woodall JM. Process-Dependent Electronic Structure at Metallized GaAs Contacts Mrs Proceedings. 260. DOI: 10.1557/Proc-260-449 |
0.382 |
|
| 1992 |
Vitomirov IM, Raisanen AD, Finnefrock AC, Viturro RE, Brillson LJ, Kirchner PD, Pettit GD, Woodall JM. Temperature‐dependent chemical and electronic structure of reconstructed GaAs (100) surfaces Journal of Vacuum Science & Technology B. 10: 1898-1903. DOI: 10.1116/1.586219 |
0.453 |
|
| 1992 |
Chang S, Raisanen A, Brillson LJ, Shaw JL, Kirchner PD, Pettit GD, Woodall JM. Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements Journal of Vacuum Science & Technology B. 10: 1932-1939. DOI: 10.1116/1.586161 |
0.446 |
|
| 1992 |
Vitomirov IM, Raisanen AD, Finnefrock AC, Viturro RE, Chang S, Brillson LJ, Kirchner PD, Pettit GD, Woodall JM. Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions Journal of Vacuum Science and Technology. 10: 749-753. DOI: 10.1116/1.578157 |
0.473 |
|
| 1992 |
Hodes G, Watkins E, Mantell D, Brillson LJ, Peisach M, Wold A. WSe2-based Schottky junctions: The effect of polyiodide treatment on junction behavior Journal of Applied Physics. 71: 5077-5088. DOI: 10.1063/1.350609 |
0.446 |
|
| 1992 |
Vitomirov IM, Raisanen AD, Brillson LJ, Kirchner PD, Pettit GD, Woodall JM. Impact of surface processing on Al/GaAs(100) interface states Solid State Communications. 84: 61-65. DOI: 10.1016/0038-1098(92)90295-K |
0.46 |
|
| 1991 |
Chang S, Vitomirov IM, Brillson LJ, Rioux DF, Kirchner PD, Pettit GD, Woodall JM. Increased range of Fermi‐level stabilization energy at metal/melt‐grown GaAs(100) interfaces Journal of Vacuum Science & Technology B. 9: 2129-2134. DOI: 10.1116/1.585751 |
0.48 |
|
| 1991 |
Vitomirov IM, Sivananthan S, Chang S, Faurie JP, Brillson LJ. Au interfaces with epitaxiaiiy grown CdTe(111): Chemistry and barrier heights Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 966-971. DOI: 10.1116/1.577557 |
0.491 |
|
| 1991 |
Chang S, Vitomirov IM, Brillson LJ, Rioux DF, Kirchner PD, Pettit GD, Woodall JM. Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces Journal of Vacuum Science and Technology. 9: 902-906. DOI: 10.1116/1.577338 |
0.414 |
|
| 1990 |
Chang S, Vitomirov IM, Brillson LJ, Rioux DF, Kirchner PD, Pettit GD, Woodall JM, Hecht MH. Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy. Physical Review. B, Condensed Matter. 41: 12299-12302. PMID 9993693 DOI: 10.1103/Physrevb.41.12299 |
0.431 |
|
| 1990 |
Chang S, Brillson LJ, Rioux DF, Kime YJ, Kirchner PD, Pettit GD, Woodall JM. Metal/GaAs interface chemical and electronic properties: GaAs orientation dependence Journal of Vacuum Science & Technology B. 8: 1008-1013. DOI: 10.1116/1.585021 |
0.488 |
|
| 1990 |
Chang S, Shaw JL, Viturro RE, Brillson LJ, Kirchner PD, Woodall JM. Temperature-dependent formation of interfacé states and Schottky barriers at metal/molecular-beam epitaxy GaAs(100) junctions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 3803-3808. DOI: 10.1116/1.576497 |
0.473 |
|
| 1990 |
Chang S, Brillson LJ, Kime YJ, Rioux DS, Kirchner PD, Pettit D, Woodall JM. Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces Physical Review Letters. 64: 2551-2554. DOI: 10.1103/PhysRevLett.64.2551 |
0.316 |
|
| 1990 |
Freeouf JL, Woodall JM, Brillson LJ, Viturro RE. Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure Applied Physics Letters. 56: 69-71. DOI: 10.1063/1.102654 |
0.45 |
|
| 1990 |
Shaw JL, Brillson LJ, Sivananthan S, Faurie JP. Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces Applied Physics Letters. 56: 1266-1268. DOI: 10.1063/1.102532 |
0.455 |
|
| 1990 |
Brillson LJ, Chang S, Shaw J, Viturro RE. Interface states at metal-compound semiconductor junctions Vacuum. 41: 1016-1020. DOI: 10.1016/0042-207X(90)93849-E |
0.492 |
|
| 1989 |
Chiaradia P, Fanfoni M, Nataletti P, Padova PD, Brillson LJ, Slade ML, Viturro RE, Kilday D, Margaritondo G. Fermi-Level Pinning and Intrinsic Surface-States in Cleaved Gap Physical Review B. 39: 5128-5131. PMID 9948902 DOI: 10.1103/Physrevb.39.5128 |
0.316 |
|
| 1989 |
Brillson LJ, Viturro RE, Chang S, Shaw JL, Mailhiot C, Zanoni R, Hwu Y, Margaritondo G, Kirchner P, Woodall JM. New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces Mrs Proceedings. 148: 103-115. DOI: 10.1557/Proc-148-103 |
0.373 |
|
| 1989 |
Enrique Viturro R, Brillson LJ. Assessing semiconductor interfaces by low energy catholuminescence spectroscopy Proceedings of Spie - the International Society For Optical Engineering. 1037: 24-29. DOI: 10.1117/12.951011 |
0.4 |
|
| 1989 |
Viturro RE, Chang S, Shaw JL, Mailhiot C, Brillson LJ, Terrasi A, Hwu Y, Margaritondo G, Kirchner PD, Woodall JM. Low‐temperature formation of metal/molecular‐beam epitaxy‐GaAs(100) interfaces: Approaching ideal chemical and electronic limits Journal of Vacuum Science & Technology B. 7: 1007-1012. DOI: 10.1116/1.584791 |
0.483 |
|
| 1989 |
Shaw JL, Viturro RE, Brillson LJ, LaGraffe D. Interdiffusion, interfacial state formation, and band bending at metal/CdTe interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 489-493. DOI: 10.1116/1.576208 |
0.443 |
|
| 1989 |
Viturro RE, Mailhiot C, Shaw JL, Brillson LJ, LaGraffe D, Margaritondo G, Pettit GD, Woodall JM. Interface states and Schottky barrier formation at metal/GaAs junctions Journal of Vacuum Science and Technology. 7: 855-860. DOI: 10.1116/1.575810 |
0.45 |
|
| 1989 |
Shaw JL, Viturro RE, Brillson LJ, Lagraffe D. Influence of deep states on CdTe and GaAs metal interface formation Journal of Electronic Materials. 18: 59-64. DOI: 10.1007/Bf02655345 |
0.456 |
|
| 1988 |
Brillson LJ, Viturro RE, Mailhiot C, Shaw JL, Tache N, McKinley J, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Unpinned Schottky barrier formation at metal–GaAs interfaces Journal of Vacuum Science & Technology B. 6: 1263-1269. DOI: 10.1116/1.584247 |
0.445 |
|
| 1988 |
Viturro RE, Shaw JL, Brillson LJ, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Arsenic‐ and metal‐induced GaAs interface states by low‐energy cathodoluminescence spectroscopy Journal of Vacuum Science & Technology B. 6: 1397-1402. DOI: 10.1116/1.584229 |
0.469 |
|
| 1988 |
Brillson LJ, Viturro RE, Shaw JL, Richter HW. Cathodoluminescence spectroscopy of metal-semiconductor interface structures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1437-1445. DOI: 10.1116/1.575722 |
0.524 |
|
| 1988 |
Shaw JL, Viturro RE, Brillson LJ, Kilday D, Kelly MK, Margaritondo G. Interfacial deep-level formation and its effect on band bending a metal/CdTe interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2752-2756. DOI: 10.1116/1.575500 |
0.456 |
|
| 1988 |
Shaw JL, Viturro RE, Brillson LJ, Kilday D, Kelly M, Margaritondo G. Deep level formation and band bending at metal/CdTe interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1579-1583. DOI: 10.1116/1.575330 |
0.428 |
|
| 1988 |
Shaw JL, Viturro RE, Brillson LJ, LaGraffe D. Chemically controlled deep level formation and band bending at metal-CdTe interfaces Applied Physics Letters. 53: 1723-1725. DOI: 10.1063/1.99806 |
0.429 |
|
| 1988 |
Viturro RE, Shaw JL, Mailhiot C, Brillson LJ, Tache N, McKinley J, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Band bending and interface states for metals on GaAs Applied Physics Letters. 52: 2052-2054. DOI: 10.1063/1.99578 |
0.498 |
|
| 1988 |
Brillson LJ, Margaritondo G. Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces The Chemical Physics of Solid Surfaces. 5: 119-181. DOI: 10.1016/B978-0-444-42782-3.50009-1 |
0.326 |
|
| 1988 |
Cerrina F, Margaritondo G, Underwood JH, Hettrick M, Green MA, Brillson LJ, Franciosi A, Höchst H, Deluca PM, Gould MN. Maximum: A scanning photoelectron microscope at Aladdin Nuclear Inst. and Methods in Physics Research, A. 266: 303-307. DOI: 10.1016/0168-9002(88)90401-9 |
0.307 |
|
| 1988 |
Chiaradia P, Fanfoni M, De Padova P, Nataletti P, Brillson L, Viturro R, Slade M, Margaritondo G, Kelly M, Kilday D, Tache N. Initial stages of GaP(1 1 0) oxidation Solid State Communications. 67: 647-650. DOI: 10.1016/0038-1098(88)90184-6 |
0.365 |
|
| 1988 |
Shaw JL, Viturro RE, Brillson LJ, Kilday D, Margaritondo G. Modification of electronic and chemical structure at metal/cdte interfaces by pulsed laser annealing Journal of Electronic Materials. 17: 149-153. DOI: 10.1007/Bf02652145 |
0.444 |
|
| 1987 |
Viturro RE, Shaw JL, Brillson LJ. Cleavage-related electronic states of Al-InP(110) interfaces Journal of Vacuum Science & Technology B. 5: 1125-1128. DOI: 10.1116/1.583740 |
0.455 |
|
| 1987 |
Chiaradia P, Brillson LJ, Slade M, Viturro RE, Kilday D, Tache N, Kelly M, Margaritondo G. Unpinned Schottky barrier formation at metal–GaP interfaces: A representative III–V compound interface Journal of Vacuum Science & Technology B. 5: 1075-1079. DOI: 10.1116/1.583731 |
0.414 |
|
| 1987 |
Viturro RE, Slade ML, Brillson LJ. Optical emission properties of metal/InP and GaAs interface states Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1516-1520. DOI: 10.1116/1.574594 |
0.465 |
|
| 1987 |
Brillson LJ, Viturro RE, Slade ML, Chiaradia P, Kilday D, Kelly MK, Margaritondo G. Near-ideal Schottky barrier formation at metal-GaP interfaces Applied Physics Letters. 50: 1379-1381. DOI: 10.1063/1.97862 |
0.439 |
|
| 1986 |
Brillson LJ, Slade ML, Viturro RE, Kelly MK, Tache N, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Fermi level pinning and chemical interactions at metal–InxGa1−xAs(100) interfaces Journal of Vacuum Science & Technology B. 4: 919-923. DOI: 10.1116/1.583537 |
0.448 |
|
| 1986 |
Slowik JH, Brillson LJ, Richter H. Acceptor‐like electron traps control effective barrier for ultrahigh vacuum‐cleaved and laser‐annealed Al/InP Journal of Vacuum Science & Technology B. 4: 974-979. DOI: 10.1116/1.583500 |
0.487 |
|
| 1986 |
Brillson LJ, Slade ML, Richter HW, VanderPlas H, Fulks RT. Titanium-silicon and silicon dioxide reactions controlled by low temperature rapid thermal annealing Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 993-997. DOI: 10.1116/1.573772 |
0.398 |
|
| 1986 |
Viturro RE, Slade ML, Brillson LJ. Optical-emission properties of interface states for metals on III-V semiconductor compounds Physical Review Letters. 57: 487-490. DOI: 10.1103/PhysRevLett.57.487 |
0.34 |
|
| 1986 |
Brillson LJ, Slade ML, Viturro RE, Kelly MK, Tache N, Margaritondo G, Woodall JM, Kirchner PD, Pettit GD, Wright SL. Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces Applied Physics Letters. 48: 1458-1460. DOI: 10.1063/1.97027 |
0.439 |
|
| 1986 |
Richter HW, Brillson LJ, Kelly MK, Daniels RR, Margaritondo G. Laser-induced chemical reactions at the Al/III-V compound semiconductor interface Journal of Applied Physics. 60: 1994-2002. DOI: 10.1063/1.337784 |
0.373 |
|
| 1986 |
Bregman J, Shapira Y, Calahorra Z, Brillson LJ. Oxygen diffusion and reaction at annealed InSb MOS interfaces Surface Science. 178: 188-200. DOI: 10.1016/0167-2584(86)90143-X |
0.427 |
|
| 1986 |
Shapira Y, Brucker CF, Brillson LJ. Studies of CaF2-CdSe interfaces using UV and X-ray photoemission spectroscopy and Auger electron spectroscopy Thin Solid Films. 135: 203-210. DOI: 10.1016/0040-6090(86)90127-6 |
0.429 |
|
| 1986 |
Brillson LJ. Promoting and characterizing new chemical structure at metal-semiconductor interfaces Surface Science. 168: 260-274. DOI: 10.1016/0039-6028(86)90856-3 |
0.429 |
|
| 1985 |
Brillson LJ. Reaction And Interdiffusion at III-V Compound Semiconductor-Metal Interfaces Mrs Proceedings. 54. DOI: 10.1557/Proc-54-327 |
0.351 |
|
| 1985 |
Brillson LJ, Richter HW, Shapira Y, Slade ML, Weinstein BA. Cathodoluminescence spectroscopy studies of laser-annealed metal-semiconductor interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 1011-1015. DOI: 10.1116/1.573110 |
0.401 |
|
| 1985 |
Brillson LJ, Slade ML, Richter HW, Vander Plas H, Fulks RT. Control of titanium-silicon and silicon dioxide reactions by low-temperature rapid thermal annealing Applied Physics Letters. 47: 1080-1082. DOI: 10.1063/1.96386 |
0.37 |
|
| 1985 |
Slowik JH, Richter HW, Brillson LJ. Acceptorlike electron traps and thermally reversible barrier heights for Al on UHV-cleaved (110) InP Journal of Applied Physics. 58: 3154-3161. DOI: 10.1063/1.335820 |
0.45 |
|
| 1985 |
Brillson LJ. Advances in characterizing and controlling metal-semiconductor interfaces Applied Surface Science. 22: 948-968. DOI: 10.1016/0378-5963(85)90228-4 |
0.434 |
|
| 1984 |
Richter HW, Brillson LJ. CONTROL AND CHARACTERIZATION OF METAL-InP AND GaAs INTERFACE STRUCTURES FORMED BY LASER-ENHANCED REACTIONS Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2: 591-595. DOI: 10.1116/1.582850 |
0.38 |
|
| 1984 |
Brillson LJ, Katnani AD, Kelly M, Margaritondo G. Photoemission Studies of Atomic Redistribution at Gold-Silicon and Aluminum-Silicon Interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 551-555. DOI: 10.1116/1.572443 |
0.393 |
|
| 1984 |
Shapira Y, Brillson LJ, Heller A. Origin of surface and metal-induced interface states in InP Physical Review B. 29: 6824-6832. DOI: 10.1103/Physrevb.29.6824 |
0.455 |
|
| 1984 |
Brillson LJ, Slade ML, Katnani AD, Kelly M, Margaritondo G. Reduction of silicon-aluminum interdiffusion by improved semiconductor surface ordering Applied Physics Letters. 44: 110-112. DOI: 10.1063/1.94574 |
0.398 |
|
| 1984 |
Shapira Y, Brillson LJ, Heller A. STUDIES OF SURFACE RECOMBINATION VELOCITY REDUCTION ON InP PHOTOELECTROCHEMICAL SOLAR CELLS Commission of the European Communities, (Report) Eur. 72-76. |
0.309 |
|
| 1983 |
Shapira Y, Brillson LJ. AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-InP INTERFACES Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 618-622. DOI: 10.1116/1.582610 |
0.404 |
|
| 1983 |
Shapira Y, Brillson LJ, Heller A. Investigation of InP surface and metal interfaces by surface photovoltage and Auger electron spectroscopies Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 766-770. DOI: 10.1116/1.571996 |
0.429 |
|
| 1983 |
Brillson LJ, Shapira Y, Heller A. InP surface states and reduced surface recombination velocity Applied Physics Letters. 43: 174-176. DOI: 10.1063/1.94270 |
0.417 |
|
| 1983 |
Brillson LJ, Brucker CF, Stoffel NG, Katnani A, Daniels R, Margaritondo G. Photoemission studies of reactive diffusion and localized doping at II-VI compound semiconductor-metal interfaces Physica B+C. 117: 848-850. DOI: 10.1016/0378-4363(83)90672-1 |
0.368 |
|
| 1983 |
Brillson LJ, Brucker CF, Katnani AD, Stoffel NG, Daniels R, Margaritondo G. Systematics of chemical structure and schottky barriers at compound semiconductor-metal interfaces Surface Science. 132: 212-232. DOI: 10.1016/0039-6028(83)90539-3 |
0.366 |
|
| 1983 |
Brillson LJ. Advances in understanding metal-semiconductor interfaces by surface science techniques Journal of Physics and Chemistry of Solids. 44: 703-733. DOI: 10.1016/0022-3697(83)90002-1 |
0.329 |
|
| 1982 |
Brucker CF, Brillson LJ. Role of cation dissociation in Schottky barrier formation at II-VI compound semiconductor-metal interfaces Thin Solid Films. 93: 67-74. DOI: 10.1557/Proc-10-67 |
0.432 |
|
| 1982 |
BRUCKER CF, BRILLSON LJ, KATNANI AD, STOFFEL NG, MARGARITONDO G. SCHOTTKY BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE J Vac Sci Technol. 590-593. DOI: 10.1116/1.571792 |
0.4 |
|
| 1982 |
BRILLSON LJ, BRUCKER CF, KATNANI AD, STOFFEL NG, DANIELS R, MARGARITONDO G. FERMI-LEVEL PINNING AND CHEMICAL STRUCTURE OF INP-METAL INTERFACES J Vac Sci Technol. 564-569. DOI: 10.1116/1.571764 |
0.429 |
|
| 1982 |
Murti DK, Brillson LJ, Slowik JH. PHOTOVOLTAGE STUDIES OF ALUMINUM-PHTHALOCYANINE INTERFACES Journal of Vacuum Science &Amp; Technology. 20: 233-236. DOI: 10.1116/1.571363 |
0.439 |
|
| 1982 |
Slowik JH, Brillson LJ, Brucker CF. Time-resolved charge injection: Effect of interfacial ambients upon contact performance Journal of Applied Physics. 53: 550-556. DOI: 10.1063/1.329917 |
0.359 |
|
| 1982 |
Brillson LJ. Interaction of metals with semiconductor surfaces Applications of Surface Science. 11: 249-267. DOI: 10.1016/0378-5963(82)90073-3 |
0.389 |
|
| 1982 |
Brillson LJ. The structure and properties of metal-semiconductor interfaces Surface Science Reports. 2: 123-326. DOI: 10.1016/0167-5729(82)90001-2 |
0.41 |
|
| 1982 |
Brillson LJ. Surface photovoltage measurements and Fermi level pinning: comments on "development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds", Thin Solid Films. 89. DOI: 10.1016/0040-6090(82)90328-5 |
0.406 |
|
| 1982 |
Brillson LJ. Interface chemical reaction and diffusion of thin metal films on semiconductors Thin Solid Films. 89: 461-470. DOI: 10.1016/0040-6090(82)90326-1 |
0.422 |
|
| 1981 |
Brillson LJ. CHEMICAL AND ELECTRON STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES Journal of Vacuum Science &Amp; Technology. 20: 652-658. DOI: 10.1116/1.571619 |
0.416 |
|
| 1981 |
Brillson LJ, Brucker CF, Katnani AD, Stoffel NG, Margaritondo G. ATOMIC AND ELECTRONIC STRUCTURE OF InP-METAL INTERFACES: A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR Journal of Vacuum Science &Amp; Technology. 19: 661-666. DOI: 10.1116/1.571081 |
0.404 |
|
| 1981 |
Kahn A, Carelli J, Kanani D, Duke CB, Paton A, Brillson L. ATOMIC GEOMETRY OF Al-GaAs INTERFACES: GaAs (110)-p(1 multiplied by 1)-Al( theta ), 0 less than equivalent to theta less than equivalent to 8. 5 MONOLAYERS Journal of Vacuum Science & Technology. 19: 331-334. DOI: 10.1116/1.571058 |
0.363 |
|
| 1981 |
Brillson LJ, Brucker CF, Stoffel NG, Katnani AD, Margaritondo G. Abruptness of semiconductor-metal interfaces Physical Review Letters. 46: 838-841. DOI: 10.1103/Physrevlett.46.838 |
0.387 |
|
| 1981 |
Duke CB, Paton A, Meyer RJ, Brillson LJ, Kahn A, Kanani D, Carelli J, Yeh JL, Margaritondo G, Katnani AD. Atomic geometry of GaAs(110)-p(1×1)-Al Physical Review Letters. 46: 440-443. DOI: 10.1103/Physrevlett.46.440 |
0.391 |
|
| 1981 |
Brillson LJ, Bauer RS, Bachrach RZ, Hansson G. Atomic interdiffusion at au-gaas interfaces studied with al interlayers Physical Review B. 23: 6204-6215. DOI: 10.1103/Physrevb.23.6204 |
0.31 |
|
| 1981 |
Brucker CF, Brillson LJ. New method for control of Schottky-barrier height Applied Physics Letters. 39: 67-69. DOI: 10.1063/1.92518 |
0.421 |
|
| 1981 |
Brillson LJ, Brucker CF, Katnani AD, Stoffel NG, Margaritondo G. Chemical basis for InP-metal Schottky-barrier formation Applied Physics Letters. 38: 784-786. DOI: 10.1063/1.92162 |
0.395 |
|
| 1981 |
Brillson LJ, Luo F, Wysocki J. Field effect spectroscopy of cdse-insulator interface states Journal of Applied Physics. 52: 5250-5256. DOI: 10.1063/1.329430 |
0.38 |
|
| 1981 |
Brillson LJ, Kruger DW. Photovoltage saturation and recombination at Al-GaAs interfacial layers Surface Science. 102: 518-526. DOI: 10.1016/0039-6028(81)90043-1 |
0.447 |
|
| 1981 |
Khan A, Brillson LJ, Katnani AD, Margaritondo G. Soft X-ray photoemission study of annealed Al-overlayers on GaAs (110) Solid State Communications. 38: 1269-1272. DOI: 10.1016/0038-1098(81)91003-6 |
0.357 |
|
| 1980 |
Kahn A, Kanani D, Carelli J, Yeh JL, Duke CB, Meyer RJ, Paton A, Brillson L. LEED INTENSITY ANALYSIS OF THE STRUCTURE OF Al ON GaAs(110) Journal of Vacuum Science & Technology. 18: 792-796. DOI: 10.1116/1.570949 |
0.363 |
|
| 1980 |
Brucker CF, Brillson LJ. REACTIVE INTERDIFFUSION AT METAL-CdS AND METAL-CdSe INTERFACES Journal of Vacuum Science &Amp; Technology. 18: 787-791. DOI: 10.1116/1.570948 |
0.384 |
|
| 1980 |
Brillson LJ, Margaritondo G, Stoffel NG, Bauer RS, Bachrach RZ, Hansson G. MEASUREMENT AND MODULATION OF ATOMIC INTERDIFFUSION AT Au-Al/GaAs(110) INTERFACES Journal of Vacuum Science & Technology. 17: 880-885. DOI: 10.1116/1.570609 |
0.364 |
|
| 1980 |
Margaritondo G, Stoffel NG, Katnani AD, Brillson LJ. Atomic-interlayer-controlled diffusion at semiconductor-semiconductor interfaces Applied Physics Letters. 37: 917-918. DOI: 10.1063/1.91858 |
0.388 |
|
| 1980 |
Bauer RS, Bachrach RZ, Brillson LJ. Au and Al interface reactions with SiO2 Applied Physics Letters. 37: 1006-1008. DOI: 10.1063/1.91720 |
0.402 |
|
| 1980 |
Brillson LJ, Bauer RS, Bachrach RZ, Hasson G. Atomic interdiffusion at Au-Al/GaAs interfaces Applied Physics Letters. 36: 326-328. DOI: 10.1063/1.91480 |
0.325 |
|
| 1980 |
Margaritondo G, Brillson LJ, Stoffel NG. Secondary illumination effects in the photoemission spectra of GaAs and CdS Solid State Communications. 35: 277-280. DOI: 10.1016/0038-1098(80)90496-2 |
0.38 |
|
| 1979 |
Brillson LJ, Bauer RS, Bachrach RZ, McMenamin JC. BONDING AND DIFFUSION AT Al AND Au INTERFACES WITH CdS Journal of Vacuum Science & Technology. 17: 476-480. DOI: 10.1116/1.570487 |
0.331 |
|
| 1979 |
Brillson LJ. Chemical mechanisms of Schottky barrier formation Journal of Vacuum Science and Technology. 16: 1137-1142. DOI: 10.1116/1.570177 |
0.425 |
|
| 1979 |
Brillson LJ, Bachrach RZ, Bauer RS, McMenamin J. Chemically induced charge redistribution at Al-GaAs interfaces Physical Review Letters. 42: 397-401. DOI: 10.1103/Physrevlett.42.397 |
0.338 |
|
| 1979 |
Brillson LJ. METAL-INDUCED CHEMICAL REACTIONS AND SURFACE STATES ON GaAs and ZnS Inst Phys Conf Ser. 765-768. |
0.334 |
|
| 1978 |
Brillson LJ. CHEMICAL REACTION AND CHARGE REDISTRIBUTION AT METAL-SEMICONDUCTOR INTERFACES J Vac Sci Technol. 15: 1378-1383. DOI: 10.1116/1.569792 |
0.421 |
|
| 1978 |
Brillson LJ, Griffiths CH. SURFACE PHOTOVOLTAGE SPECTROSCOPY OF DEFECTS AND IMPURITIES IN TRIGONAL SELENIUM J Vac Sci Technol. 15: 529-532. DOI: 10.1116/1.569462 |
0.505 |
|
| 1978 |
Brillson LJ. Chemical reactions and local charge redistribution at metal-CdS and CdSe interfaces Physical Review B. 18: 2431-2446. DOI: 10.1103/Physrevb.18.2431 |
0.454 |
|
| 1978 |
Ritsko JJ, Brillson LJ, Bigelow RW, Fabish TJ. Electron energy loss spectroscopy and the optical properties of polymethylmethacrylate from 1 to 300 eV The Journal of Chemical Physics. 69: 3931-3939. DOI: 10.1063/1.437131 |
0.401 |
|
| 1978 |
Brillson LJ. Transition in Schottky barrier formation with chemical reactivity Physical Review Letters. 40: 260-263. DOI: 10.1007/978-94-009-0657-0_16 |
0.349 |
|
| 1977 |
Brillson LJ. Coupled interface plasmons of Al films on CdSe and CdS Physical Review Letters. 38: 245-248. DOI: 10.1103/Physrevlett.38.245 |
0.366 |
|
| 1977 |
Brillson LJ. Surface electronic and chemical structure of (1120)CdSe: Comparison with CdS Surface Science. 69: 62-84. DOI: 10.1016/0039-6028(77)90162-5 |
0.442 |
|
| 1977 |
Ritsko JJ, Brillson LJ, Sandman DJ. Electron energy-loss spectroscopy of tetracyanoquinodimethane, TCNQ, tetrathiafulvalene, TTF, and the salt TTF-TCNQ Solid State Communications. 24: 109-112. DOI: 10.1016/0038-1098(77)90578-6 |
0.352 |
|
| 1976 |
Brillson LJ. Surface photovoltage and electron energy‐loss spectroscopy of oxygen adsorbed on (112̄0) CdSe Journal of Vacuum Science and Technology. 13: 325-328. DOI: 10.1116/1.568838 |
0.468 |
|
| 1976 |
Brillson LJ, Ceasar GP. Direct comparison of Auger electron spectroscopy and ESCA sensitivities Journal of Applied Physics. 47: 4195-4197. DOI: 10.1063/1.323287 |
0.338 |
|
| 1975 |
Brillson LJ. Observation of extrinsic surface states on (112̄0) CdS Surface Science. 51: 45-60. DOI: 10.1016/0039-6028(75)90233-2 |
0.413 |
|
| 1975 |
Brillson LJ. SURFACE PHOTOVOLTAGE AND ELECTRON ENERGY-LOSS SPECTROSCOPY OF OXYGEN ADSORBED ON (112 BAR 0) CdSe J Vac Sci Technol. 13: 325-328. |
0.368 |
|
| 1974 |
Brillson LJ, Burstein E, Muldawer L. Raman observation of the ferroelectric phase transition in SnTe Physical Review B. 9: 1547-1551. DOI: 10.1103/Physrevb.9.1547 |
0.302 |
|
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