| Year |
Citation |
Score |
| 2008 |
Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ. Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 232-243. DOI: 10.1116/1.2830692 |
0.523 |
|
| 2007 |
Ewing DJ, Porter LM, Wahab Q, Ma X, Sudharshan TS, Tumakha S, Gao M, Brillson LJ. Inhomogeneities in Ni4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states Journal of Applied Physics. 101. DOI: 10.1063/1.2745436 |
0.594 |
|
| 2007 |
Gao M, Tsukimoto S, Goss SH, Tumakha SP, Onishi T, Murakami M, Brillson LJ. Role of interface layers and localized states in TiAl-based Ohmic contacts to p-type 4H-SiC Journal of Electronic Materials. 36: 277-284. DOI: 10.1007/S11664-006-0078-0 |
0.53 |
|
| 2006 |
Ewing DJ, Wahab Q, Tumakha S, Brillson LJ, Ma XY, Sudarshan TS, Porter LM. A study of inhomogeneous Schottky diodes on n-type 4H-SiC Materials Science Forum. 527: 911-914. |
0.578 |
|
| 2006 |
Tumakha S, Porter LM, Ewing DJ, Wahab Q, Ma XY, Sudarshan TS, Brillson LJ. Nanoscale deep level defect correlation with Schottky barriers in 4H-SiC/metal diodes Materials Science Forum. 527: 907-910. |
0.594 |
|
| 2006 |
Gao M, Tumakha SP, Onishi T, Tsukimoto S, Murakami M, Brillson LJ. Characterization of Ti/Al ohmic contacts to p-type 4H-SiC using cathodoluminescence and Auger electron spectroscopies Materials Science Forum. 527: 891-894. |
0.425 |
|
| 2005 |
Tumakha S, Goss SH, Brillson LJ, Okojie RS. Electronic defect states at annealed metal/4H-SiC interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 594-598. DOI: 10.1116/1.1884124 |
0.613 |
|
| 2005 |
Tumakha S, Ewing DJ, Porter LM, Wahab Q, Ma X, Sudharshan TS, Brillson LJ. Defect-driven inhomogeneities in Ni4H-SiC Schottky barriers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2141719 |
0.63 |
|
| 2005 |
Brillson LJ, Bradley ST, Tumakha SH, Goss SH, Sun XL, Okojie RS, Hwang J, Schaff WJ. Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Applied Surface Science. 244: 257-263. DOI: 10.1016/J.Apsusc.2004.09.172 |
0.677 |
|
| 2004 |
Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P. SiC studied via LEEN and cathodoluminescence spectroscopy Materials Science Forum. 457: 543-548. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.543 |
0.674 |
|
| 2004 |
Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P. Electron-excited luminescence of SiC surfaces and interfaces Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/17/015 |
0.598 |
|
| 2002 |
Okojie RS, Lukco D, Keys L, Tumakha S, Brillson LJ. Surface morphology and chemistry of 4H- and 6H-SiC after cyclic oxidation Materials Science Forum. 389: 1101-1104. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1101 |
0.604 |
|
| 2002 |
Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P. Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 554-560. DOI: 10.1116/1.1451303 |
0.717 |
|
| 2002 |
Brillson LJ, Tumakha S, Jessen GH, Okojie RS, Zhang M, Pirouz P. Thermal and doping dependence of 4H-SiC polytype transformation Applied Physics Letters. 81: 2785-2787. DOI: 10.1063/1.1512816 |
0.708 |
|
| 2002 |
Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ. 4H-to 30-SiC polytypic transformation during oxidation Materials Science Forum. 389: 451-454. |
0.64 |
|
| 2001 |
Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ. Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation Applied Physics Letters. 79: 3056-3058. DOI: 10.1063/1.1415347 |
0.702 |
|
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