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James A. Felix, Ph.D. - Publications

Affiliations: 
2003 Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Schwank JR, Shaneyfelt MR, Fleetwood DM, Felix JA, Dodd PE, Paillet P, Ferlet-Cavrois V. Radiation effects in MOS oxides Ieee Transactions On Nuclear Science. 55: 1833-1853. DOI: 10.1109/Tns.2008.2001040  0.65
2007 Girard S, Tortech B, Regnier E, Uffelen MV, Gusarov A, Ouerdane Y, Baggio J, Paillet P, Ferlet-Cavrois V, Boukenter A, Meunier J-, Berghmans F, Schwank JR, Shaneyfelt MR, Felix JA, et al. Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers Ieee Transactions On Nuclear Science. 54: 2426-2434. DOI: 10.1109/Tns.2007.910859  0.362
2007 Reed RA, Weller RA, Mendenhall MH, Lauenstein JM, Warren KM, Pellish JA, Schrimpf RD, Sierawski BD, Massengill LW, Dodd PE, Shanevfelt MR, Felix JA, Schwank JR, Haddad NK, Lawrence RK, et al. Impact of ion energy and species on single event effects analysis Ieee Transactions On Nuclear Science. 54: 2312-2321. DOI: 10.1109/Tns.2007.909901  0.331
2006 Lucovsky G, Fleetwood DM, Lee S, Seo H, Schrimpf RD, Felix JA, Lüning J, Fleming LB, Ulrich M, Aspnes DE. Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates Ieee Transactions On Nuclear Science. 53: 3644-3648. DOI: 10.1109/Tns.2006.886211  0.571
2006 Shaneyfelt MR, Schwank JR, Dodd PE, Hash GL, Paillet P, Felix JA, Baggio J, Ferlet-Cavrois V. Implications of characterization temperature on hardness assurance qualification Ieee Transactions On Nuclear Science. 53: 3132-3138. DOI: 10.1109/Tns.2006.886009  0.362
2005 Schwank JR, Shaneyfelt MR, Baggio J, Dodd PE, Felix JA, Ferlet-Cavrois V, Paillet P, Lambert D, Sexton FW, Hash GL, Blackmore E. Effects of particle energy on proton-induced single-event latchup Ieee Transactions On Nuclear Science. 52: 2622-2629. DOI: 10.1109/Tns.2005.860672  0.344
2005 Zhou XJ, Fleetwood DM, Felix JA, Gusev EP, D'Emic C. Bias-temperature instabilities and radiation effects in MOS devices Ieee Transactions On Nuclear Science. 52: 2231-2238. DOI: 10.1109/Tns.2005.860667  0.621
2004 Lum GK, Boruta N, Baker JM, Robinette L, Shaneyfelt MR, Schwank JR, Dodd PE, Felix JA. New experimental findings for single-event gate rupture in MOS capacitors and linear devices Ieee Transactions On Nuclear Science. 51: 3263-3269. DOI: 10.1109/Tns.2004.840262  0.442
2004 Shaneyfelt MR, Pease RL, Schwank JR, Felix JA, Maher MC, Fleetwood DM, Dodd PE. Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity Ieee Transactions On Nuclear Science. 51: 3172-3177. DOI: 10.1109/Tns.2004.839200  0.607
2004 Zhou XJ, Tsetseris L, Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST, Felix JA, Gusev EP, D’Emic C. Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics Applied Physics Letters. 84: 4394-4396. DOI: 10.1063/1.1757636  0.606
2004 Felix JA, Schwank JR, Fleetwood DM, Shaneyfelt MR, Gusev EP. Effects of radiation and charge trapping on the reliability of high-κ gate dielectrics Microelectronics Reliability. 44: 563-575. DOI: 10.1016/J.Microrel.2003.12.005  0.652
2004 Felix JA, Schwank JR, Cirba CR, Schrimpf RD, Shaneyfelt MR, Fleetwood DM, Dodd PE. Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs Microelectronic Engineering. 72: 332-341. DOI: 10.1016/J.Mee.2004.01.013  0.667
2004 Felix JA, Xiong HD, Fleetwood DM, Gusev EP, Schrimpf RD, Sternberg AL, D'Emic C. Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation Microelectronic Engineering. 72: 50-54. DOI: 10.1016/J.Mee.2003.12.015  0.619
2003 Felix JA, Shaneyfelt MR, Fleetwood DM, Meisenheimer TL, Schwank JR, Schrimpf RD, Dodd PE, Gusev EP, D'Emic C. Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks Ieee Transactions On Nuclear Science. 50: 1910-1918. DOI: 10.1109/Tns.2003.820763  0.599
2003 Xiong HD, Fleetwood DM, Felix JA, Gusev EP, D’Emic C. Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks Applied Physics Letters. 83: 5232-5234. DOI: 10.1063/1.1635071  0.593
2002 Fleetwood DM, Xiong HD, Lu Z-, Nicklaw CJ, Felix JA, Schrimpf RD, Pantelides ST. Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices Ieee Transactions On Nuclear Science. 49: 2674-2683. DOI: 10.1109/Tns.2002.805407  0.58
2002 Felix JA, Fleetwood DM, Schrimpf RD, Hong JG, Lucovsky G, Schwank JR, Shaneyfelt MR. Total-dose radiation response of hafnium-silicate capacitors Ieee Transactions On Nuclear Science. 49: 3191-3196. DOI: 10.1109/Tns.2002.805392  0.67
2001 Felix JA, Fleetwood DM, Riewe LC, Shaneyfelt MR, Winokur PS. Bias and frequency dependence of radiation-induced-charge trapping in MOS devices Ieee Transactions On Nuclear Science. 48: 2114-2120. DOI: 10.1109/23.983181  0.611
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