| Year |
Citation |
Score |
| 2019 |
Weber ER, Newman N. Pressure dependence of III-V Schottky barriers: A critical test of theories for Fermi level pinning. Physical Review Letters. 73: 581-584. PMID 10057483 DOI: 10.1103/Physrevlett.73.581 |
0.309 |
|
| 2019 |
Zheng JF, Liu X, Newman N, Weber ER, Ogletree DF, Salmeron M. Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs. Physical Review Letters. 72: 1490-1493. PMID 10055622 DOI: 10.1103/Physrevlett.72.1490 |
0.369 |
|
| 2019 |
Khachaturyan K, Weber ER, White RM. Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degreesC. Physical Review. B, Condensed Matter. 45: 4258-4265. PMID 10002040 DOI: 10.1103/Physrevb.45.4258 |
0.376 |
|
| 2013 |
Weber ER, Kisielowski C. New Materials: Gallium Nitride Materials Science and Technology. 771-808. DOI: 10.1002/9783527603978.Mst0254 |
0.363 |
|
| 2009 |
Kwapil W, Gundel P, Schubert MC, Heinz FD, Warta W, Weber ER, Goetzberger A, Martinez-Criado G. Observation of metal precipitates at prebreakdown sites in multicrystalline silicon solar cells Applied Physics Letters. 95. DOI: 10.1063/1.3272682 |
0.307 |
|
| 2009 |
Istratov AA, Buonassisi T, Weber ER. Structural, Elemental, and Chemical Complex Defects in Silicon and Their Impact on Silicon Devices The Electrochemical Society Interface. 14: 79-112. DOI: 10.1007/978-3-540-74559-4_5 |
0.348 |
|
| 2007 |
Specht P, Hong W, Weber ER. Are the Materials Properties of Indiumnitride Dominated by Defects Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F02-01 |
0.343 |
|
| 2007 |
Heuer M, Buonassisi T, Istratov AA, Pickett MD, Marcus MA, Minor AM, Weber ER. Transition metal interaction and Ni-Fe-Cu-Si phases in silicon Journal of Applied Physics. 101. DOI: 10.1063/1.2748346 |
0.302 |
|
| 2007 |
Khanal DR, Buonassisi T, Marcus MA, Istratov AA, Weber ER. Physical mechanisms of in situ surface gettering of metals in ribbon silicon for solar cells Applied Physics Letters. 90. DOI: 10.1063/1.2711523 |
0.345 |
|
| 2007 |
Buonassisi T, Heuer M, Istratov AA, Pickett MD, Marcus MA, Lai B, Cai Z, Heald SM, Weber ER. Transition metal co-precipitation mechanisms in silicon Acta Materialia. 55: 6119-6126. DOI: 10.1016/J.Actamat.2007.07.030 |
0.312 |
|
| 2006 |
Heuer M, Buonassisi T, Marcus MA, Istratov AA, Pickett MD, Shibata T, Weber ER. Complex intermetallic phase in multicrystalline silicon doped with transition metals Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.235204 |
0.309 |
|
| 2006 |
Zhang P, Istratov AA, Weber ER, Kisielowski C, He H, Nelson C, Spence JCH. Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction Applied Physics Letters. 89: 161907. DOI: 10.1063/1.2362978 |
0.327 |
|
| 2006 |
Buonassisi T, Istratov AA, Pickett MD, Marcus MA, Ciszek TF, Weber ER. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration Applied Physics Letters. 89. DOI: 10.1063/1.2234570 |
0.322 |
|
| 2006 |
Specht P, Xu X, Armitage R, Weber ER, Erni R, Kisielowski C. Local band and defect transitions in InGaN observed by valence electron energy loss spectroscopy Physica B-Condensed Matter. 376: 552-555. DOI: 10.1016/J.Physb.2005.12.139 |
0.379 |
|
| 2006 |
Yang Q, Feick H, Weber ER. Defects related to N-sublattice damage in electron irradiated GaN Physica B-Condensed Matter. 376: 447-450. DOI: 10.1016/J.Physb.2005.12.115 |
0.353 |
|
| 2006 |
Sachdeva R, Istratov AA, Radetic T, Xu X, Deenapanray PNK, Weber ER. Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon Physica B-Condensed Matter. 376: 420-423. DOI: 10.1016/J.Physb.2005.12.108 |
0.325 |
|
| 2006 |
Istratov AA, Buonassisi T, Pickett MD, Heuer M, Weber ER. Control of metal impurities in "dirty" multicrystalline silicon for solar cells Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 134: 282-286. DOI: 10.1016/J.Mseb.2006.06.023 |
0.311 |
|
| 2006 |
Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni E, Kisielowski C. Zincblende and wurtzite phases in InN epilayers and their respective band transitions Journal of Crystal Growth. 288: 225-229. DOI: 10.1016/J.Jcrysgro.2005.12.002 |
0.783 |
|
| 2006 |
Buonassisi T, Istratov AA, Pickett MD, Rakotoniaina JP, Breitenstein O, Marcus MA, Heald SM, Weber ER. Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material Journal of Crystal Growth. 287: 402-407. DOI: 10.1016/J.Jcrysgro.2005.11.053 |
0.319 |
|
| 2006 |
Sachdeva R, Istratov AA, Deenapanray PNK, Weber ER. Electrical properties and diffusion behavior of hafnium in single crystal silicon Applied Physics A. 84: 351-367. DOI: 10.1007/S00339-006-3637-6 |
0.344 |
|
| 2006 |
Buonassisi T, Istratov AA, Pickett MD, Heuer M, Kalejs JP, Hahn G, Marcus MA, Lai B, Cai Z, Heald SM, Ciszek TF, Clark RF, Cunningham DW, Gabor AM, Jonczyk R, ... ... Weber ER, et al. Chemical natures and distributions of metal impurities in multicrystalline silicon materials Progress in Photovoltaics: Research and Applications. 14: 512-531. DOI: 10.1002/Pip.690 |
0.307 |
|
| 2005 |
Buonassisi T, Istratov AA, Marcus MA, Heuer M, Pickett MD, Lai B, Cai Z, Heald SM, Weber ER. Local measurements of diffusion length and chemical character of metal clusters in multicrystalline silicon Solid State Phenomena. 108: 577-584. DOI: 10.4028/Www.Scientific.Net/Ssp.108-109.577 |
0.322 |
|
| 2005 |
Xu X, Beckman SP, Specht P, Weber ER, Chrzan DC, Erni RP, Arslan I, Browning N, Bleloch A, Kisielowski C. Distortion and segregation in a dislocation core region at atomic resolution Physical Review Letters. 95. DOI: 10.1103/Physrevlett.95.145501 |
0.303 |
|
| 2005 |
Istratov AA, Väinölä H, Huber W, Weber ER. Gettering in silicon-on-insulator wafers: experimental studies and modelling Semiconductor Science and Technology. 20: 568-575. DOI: 10.1088/0268-1242/20/6/016 |
0.316 |
|
| 2005 |
Ho JC, Specht P, Yang Q, Xu X, Hao D, Weber ER. Effects of stoichiometry on electrical, optical, and structural properties of indium nitride Journal of Applied Physics. 98: 93712. DOI: 10.1063/1.2130514 |
0.364 |
|
| 2005 |
Buonassisi T, Istratov AA, Peters S, Ballif C, Isenberg J, Riepe S, Warta W, Schindler R, Willeke G, Cai Z, Lai B, Weber ER. Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells Applied Physics Letters. 87: 121918. DOI: 10.1063/1.2048819 |
0.337 |
|
| 2005 |
Xu X, Specht P, Armitage R, Ho JC, Weber ER, Kisielowski C. Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy Applied Physics Letters. 87: 92102. DOI: 10.1063/1.2035330 |
0.775 |
|
| 2005 |
Buonassisi T, Istratov AA, Pickett MD, Marcus MA, Hahn G, Riepe S, Isenberg J, Warta W, Willeke G, Ciszek TF, Weber ER. Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current Applied Physics Letters. 87. DOI: 10.1063/1.1997274 |
0.329 |
|
| 2005 |
Xu X, Armitage R, Shinkai S, Sasaki K, Kisielowski C, Weber ER. Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer Applied Physics Letters. 86: 182104. DOI: 10.1063/1.1923192 |
0.785 |
|
| 2005 |
Istratov AA, Zhang P, McDonald RJ, Smith AR, Seacrist M, Moreland J, Shen J, Wahlich R, Weber ER. Nickel solubility in intrinsic and doped silicon Journal of Applied Physics. 97: 23505. DOI: 10.1063/1.1836852 |
0.352 |
|
| 2005 |
Buonassisi T, Marcus MA, Istratov AA, Heuer M, Ciszek TF, Lai B, Cai Z, Weber ER. Analysis of copper-rich precipitates in silicon: chemical state, gettering, and impact on multicrystalline silicon solar cell material Journal of Applied Physics. 97: 63503. DOI: 10.1063/1.1827913 |
0.303 |
|
| 2005 |
Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni R, Kisielowski C. Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy Solid State Communications. 135: 340-344. DOI: 10.1016/J.Ssc.2005.04.041 |
0.784 |
|
| 2004 |
Ebert P, Jäger ND, Urban K, Weber ER. Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces Journal of Vacuum Science & Technology B. 22: 2018-2025. DOI: 10.1116/1.1771680 |
0.334 |
|
| 2004 |
Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853 |
0.76 |
|
| 2004 |
Buonassisi T, Vyvenko OF, Istratov AA, Weber ER, Hahn G, Sontag D, Rakotoniaina JP, Breitenstein O, Isenberg J, Schindler R. Observation of transition metals at shunt locations in multicrystalline silicon solar cells Journal of Applied Physics. 95: 1556-1561. DOI: 10.1063/1.1636252 |
0.316 |
|
| 2004 |
Specht P, Armitage R, Ho J, Gunawan E, Yang Q, Xu X, Kisielowski C, Weber ER. The influence of structural properties on conductivity and luminescence of MBE grown InN Journal of Crystal Growth. 269: 111-118. DOI: 10.1016/J.Jcrysgro.2004.05.097 |
0.438 |
|
| 2004 |
Armitage R, Yang Q, Feick H, Weber ER. Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN Journal of Crystal Growth. 263: 132-142. DOI: 10.1016/J.Jcrysgro.2003.11.091 |
0.77 |
|
| 2003 |
Armitage R, Yang Q, Weber ER. P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire Mrs Internet Journal of Nitride Semiconductor Research. 8. DOI: 10.1557/S1092578300000491 |
0.792 |
|
| 2003 |
Fang Z, Look DC, Armitage R, Yang Q, Weber ER. Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular Beam Epitaxy Mrs Proceedings. 798: 521-526. DOI: 10.1557/Proc-798-Y5.27 |
0.333 |
|
| 2003 |
Yang Q, Armitage R, Weber ER, Birkhahn R, Gotthold D, Guo S, Albert B. Recombination Related to Two-Dimensional Electron Gas of Al x Ga 1-x N/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.47 |
0.315 |
|
| 2003 |
Istratov AA, Huber W, Weber ER. Modeling of Competitive Gettering of Iron in Silicon Integrated Circuit Technology Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1556598 |
0.346 |
|
| 2003 |
Gebauer J, Lausmann M, Redmann F, Krause-Rehberg R, Leipner HS, Weber ER, Ebert P. Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation Physical Review B. 67: 235207. DOI: 10.1103/Physrevb.67.235207 |
0.351 |
|
| 2003 |
Jäger ND, Weber ER, Urban K, Ebert P. Importance of carrier dynamics and conservation of momentum in atom-selective STM imaging and band gap determination of GaAs(110) Physical Review B. 67: 165327. DOI: 10.1103/Physrevb.67.165327 |
0.329 |
|
| 2003 |
Istratov AA, Buonassisi T, McDonald RJ, Smith AR, Schindler R, Rand JA, Kalejs JP, Weber ER. Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length Journal of Applied Physics. 94: 6552-6559. DOI: 10.1063/1.1618912 |
0.334 |
|
| 2003 |
Shapiro NA, Feick H, Hong W, Cich M, Armitage R, Weber ER. Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain Journal of Applied Physics. 94: 4520-4529. DOI: 10.1063/1.1607521 |
0.777 |
|
| 2003 |
Armitage R, Hong W, Yang Q, Feick H, Gebauer J, Weber ER, Hautakangas S, Saarinen K. Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN Applied Physics Letters. 82: 3457-3459. DOI: 10.1063/1.1578169 |
0.792 |
|
| 2003 |
Yang Q, Feick H, Weber ER. Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN Applied Physics Letters. 82: 3002-3004. DOI: 10.1063/1.1570943 |
0.315 |
|
| 2003 |
Jäger ND, Urban K, Weber ER, Ebert P. Nanoscale dopant-induced dots and potential fluctuations in GaAs Applied Physics Letters. 82: 2700-2702. DOI: 10.1063/1.1569419 |
0.338 |
|
| 2003 |
Gebauer J, Weber ER, Jäger ND, Urban K, Ebert P. Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy Applied Physics Letters. 82: 2059-2061. DOI: 10.1063/1.1563835 |
0.385 |
|
| 2003 |
Tzeng SY, Cich MJ, Zhao R, Feick H, Weber ER. Generation-recombination low-frequency noise signatures in GaAs metal-semiconductor field-effect transistors on laterally oxidized AlAs Applied Physics Letters. 82: 1063-1065. DOI: 10.1063/1.1555710 |
0.736 |
|
| 2003 |
Tillmann K, Luysberg M, Specht P, Weber ER. Impact of beryllium dopants on the stability of LT-grown AlAs/GaAs:Be heterostructures against thermally activated intermixing Thin Solid Films. 437: 74-82. DOI: 10.1016/S0040-6090(03)00667-9 |
0.423 |
|
| 2003 |
Weber ER. Understanding defects in semiconductors as key to advancing device technology Physica B-Condensed Matter. 1-14. DOI: 10.1016/J.Physb.2003.10.001 |
0.34 |
|
| 2003 |
Buonassisi T, Heuer M, Vyvenko OF, Istratov AA, Weber ER, Cai Z, Lai B, Ciszek TF, Schindler R. Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects Physica B-Condensed Matter. 340: 1137-1141. DOI: 10.1016/J.Physb.2003.09.099 |
0.323 |
|
| 2003 |
Yang Q, Feick H, Armitage R, Weber ER. Metastability in the excitonic luminescence of electron-irradiated GaN Physica Status Solidi (C). 2712-2715. DOI: 10.1002/Pssc.200303312 |
0.768 |
|
| 2002 |
Armitage R, Yang Q, Feick H, Tzeng SY, Lim J, Weber ER. Optical and electrical properties of semi-insulating GaN:C grown by MBE Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L10.7 |
0.752 |
|
| 2002 |
Shapiro NA, Feick H, Hong W, Gardner NF, Goetz WK, Yang JW, Weber ER. Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K3.3 |
0.78 |
|
| 2002 |
Armitage R, Yang Q, Feick H, Park Y, Weber ER. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source Lawrence Berkeley National Laboratory. 719. DOI: 10.1557/Proc-719-F1.2 |
0.384 |
|
| 2002 |
Istratov AA, Weber ER. Physics of Copper in Silicon Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1421348 |
0.313 |
|
| 2002 |
Jäger ND, Urban K, Weber ER, Ebert P. Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayers Physical Review B. 65. DOI: 10.1103/Physrevb.65.235302 |
0.333 |
|
| 2002 |
Jäger ND, Ebert P, Urban K, Krause-Rehberg R, Weber ER. Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs Physical Review B. 65: 195318. DOI: 10.1103/Physrevb.65.195318 |
0.325 |
|
| 2002 |
Armitage R, Yang Q, Feick H, Gebauer J, Weber ER, Shinkai S, Sasaki K. Lattice-matched HfN buffer layers for epitaxy of GaN on Si Applied Physics Letters. 81: 1450-1452. DOI: 10.1063/1.1501447 |
0.794 |
|
| 2002 |
Zhao RA, Cich MJ, Specht P, Weber ER. In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs Applied Physics Letters. 80: 2060-2062. DOI: 10.1063/1.1463215 |
0.762 |
|
| 2002 |
Cich MJ, Zhao R, Anderson EH, Weber ER. Influence of gas transport on the oxidation rate of aluminum arsenide Journal of Applied Physics. 91: 121-124. DOI: 10.1063/1.1421037 |
0.662 |
|
| 2002 |
Istratov AA, Hieslmair H, Vyvenko OF, Weber ER, Schindler R. Defect recognition and impurity detection techniques in crystalline silicon for solar cells Solar Energy Materials and Solar Cells. 72: 441-451. DOI: 10.1016/S0927-0248(01)00192-1 |
0.327 |
|
| 2001 |
Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P. Room-temperature ultraviolet nanowire nanolasers. Science (New York, N.Y.). 292: 1897-9. PMID 11397941 DOI: 10.1126/Science.1060367 |
0.336 |
|
| 2001 |
Zhukov AE, Semenova ES, Ustinov VM, Weber ER. GaAsN-on-GaAs MBE using a DC plasma source Technical Physics. 46: 1265-1269. DOI: 10.1134/1.1412061 |
0.302 |
|
| 2001 |
Zhukov AE, Zhao R, Specht P, Ustinov VM, Anders A, Weber ER. MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source Semiconductor Science and Technology. 16: 413-419. DOI: 10.1088/0268-1242/16/5/323 |
0.531 |
|
| 2001 |
Harutyunyan VS, Aivazyan AP, Weber ER, Kim Y, Park Y, Subramanya SG. High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures Journal of Physics D. 34. DOI: 10.1088/0022-3727/34/10A/308 |
0.754 |
|
| 2001 |
Gebauer J, Zhao R, Specht P, Weber ER, Börner F, Redmann F, Krause-Rehberg R. Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures Applied Physics Letters. 79: 4313-4315. DOI: 10.1063/1.1427150 |
0.628 |
|
| 2001 |
Sachdeva R, Istratov AA, Weber ER. Recombination activity of copper in silicon Applied Physics Letters. 79: 2937-2939. DOI: 10.1063/1.1415350 |
0.309 |
|
| 2001 |
Nozaki S, Feick H, Weber ER, Micovic M, Nguyen C. Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors Applied Physics Letters. 78: 2896-2898. DOI: 10.1063/1.1367274 |
0.376 |
|
| 2001 |
Kim Y, Shapiro NA, Feick H, Armitage R, Weber ER, Yang Y, Cerrina F. Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth Applied Physics Letters. 78: 895-897. DOI: 10.1063/1.1347016 |
0.795 |
|
| 2001 |
Gebauer J, Zhao R, Specht P, Börner F, Redmann F, Krause-Rehberg R, Weber ER. Native point defects in non-stoichiometric GaAs doped with beryllium Physica B-Condensed Matter. 308: 812-815. DOI: 10.1016/S0921-4526(01)00810-9 |
0.578 |
|
| 2001 |
Specht P, Cich MJ, Zhao R, Gebauer J, Luysberg M, Weber ER. Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs: Be Physica B: Condensed Matter. 308: 808-811. DOI: 10.1016/S0921-4526(01)00809-2 |
0.775 |
|
| 2001 |
Park Y, Cich MJ, Zhao R, Specht P, Feick H, Weber ER. AFM study of lattice matched and strained InGaAsN layers on GaAs Physica B: Condensed Matter. 308: 98-101. DOI: 10.1016/S0921-4526(01)00669-X |
0.782 |
|
| 2001 |
Feick H, Weber ER. Radiation-induced defects in oxygen-enriched silicon detector materials Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 473: 114-118. DOI: 10.1016/S0168-9002(01)01130-5 |
0.305 |
|
| 2001 |
Shapiro NA, Feick H, Gardner NF, Götz WK, Waltereit P, Speck JS, Weber ER. Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells Physica Status Solidi B-Basic Solid State Physics. 228: 147-151. DOI: 10.1002/1521-3951(200111)228:1<147::Aid-Pssb147>3.0.Co;2-N |
0.687 |
|
| 2000 |
Shapiro NA, Perlin P, Kisielowski C, Mattos LS, Yang JW, Weber ER. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/S1092578300000016 |
0.693 |
|
| 2000 |
Kim Y, Subramanya SG, Krueger J, Siegle H, Shapiro N, Armitage R, Feick H, Weber ER, Kisielowski C, Yang Y, Cerrina F. Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T4.10.1 |
0.797 |
|
| 2000 |
Istratov AA, Hieslmair H, Weber ER. Advanced Gettering Techniques in ULSI Technology Mrs Bulletin. 25: 33-38. DOI: 10.1557/Mrs2000.96 |
0.308 |
|
| 2000 |
Liu WK, Lubyshev DI, Specht P, Zhao R, Weber ER, Gebauer J, SpringThorpe AJ, Streater RW, Vijarnwannaluk S, Songprakob W, Zallen R. Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1594-1597. DOI: 10.1116/1.591434 |
0.585 |
|
| 2000 |
Park Y, Cich MJ, Zhao R, Specht P, Weber ER, Stach E, Nozaki S. Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1566-1571. DOI: 10.1116/1.591427 |
0.785 |
|
| 2000 |
Specht P, Cich MJ, Zhao R, Jäger ND, Gebauer J, Börner F, Krause-Rehberg R, Luysberg M, Weber ER. Defect engineering in MBE grown GaAs based materials Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 73-76. DOI: 10.1109/SIM.2000.939200 |
0.682 |
|
| 2000 |
Shapiro NA, Kim Y, Feick H, Weber ER, Perlin P, Yang JW, Akasaki I, Amano H. Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain Physical Review B. 62. DOI: 10.1103/Physrevb.62.R16318 |
0.677 |
|
| 2000 |
Gebauer J, Börner F, Krause-Rehberg R, Staab TEM, Bauer-Kugelmann W, Kögel G, Triftshäuser W, Specht P, Lutz RC, Weber ER, Luysberg M. Defect identification in GaAs grown at low temperatures by positron annihilation Journal of Applied Physics. 87: 8368-8379. DOI: 10.1063/1.373549 |
0.396 |
|
| 2000 |
Kim Y, Subramanya SG, Siegle H, Krüger J, Perlin P, Weber ER, Ruvimov S, Liliental-Weber Z. GaN thin films by growth on Ga-rich GaN buffer layers Journal of Applied Physics. 88: 6032-6036. DOI: 10.1063/1.1319162 |
0.775 |
|
| 2000 |
Reusch TCG, Wenderoth M, Heinrich AJ, Engel KJ, Quaas N, Sauthoff K, Ulbrich RG, Weber ER, Uchida K, Wegscheider W. Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy Applied Physics Letters. 76: 3882-3884. DOI: 10.1063/1.126808 |
0.345 |
|
| 2000 |
Kohno H, Hieslmair H, Istratov AA, Weber ER. Temperature dependence of the iron donor level in silicon at device processing temperatures Applied Physics Letters. 76: 2734-2736. DOI: 10.1063/1.126459 |
0.321 |
|
| 2000 |
Perlin P, Wiśniewski P, Skierbiszewski C, Suski T, Kamińska E, Subramanya SG, Weber ER, Mars DE, Walukiewicz W. Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01 Applied Physics Letters. 76: 1279-1281. DOI: 10.1063/1.126008 |
0.354 |
|
| 2000 |
Istratov AA, Flink C, Hieslmair H, McHugo SA, Weber ER. Diffusion, solubility and gettering of copper in silicon Materials Science and Engineering B-Advanced Functional Solid-State Materials. 72: 99-104. DOI: 10.1016/S0921-5107(99)00514-0 |
0.318 |
|
| 2000 |
Sasaki A, Weber ER, Liliental-Weber Z, Ruvimov S, Washburn J, Nabetani Y. Transition thickness of semiconductor heteroepitaxy Thin Solid Films. 367: 277-280. DOI: 10.1016/S0040-6090(00)00688-X |
0.379 |
|
| 2000 |
Armitage R, Cich M, Rubin M, Weber ER. A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches Applied Physics A. 71: 647-650. DOI: 10.1007/S003390000582 |
0.764 |
|
| 2000 |
Hofmann DM, Meyer BK, Alves H, Leiter F, Burkhard W, Romanov N, Kim Y, Krüger J, Weber ER. Red (1.8 eV) luminescence in epitaxially grown GaN Physica Status Solidi (a) Applied Research. 180: 261-265. DOI: 10.1002/1521-396X(200007)180:1<261::Aid-Pssa261>3.0.Co;2-2 |
0.744 |
|
| 2000 |
Istratov AA, Flink C, Weber ER. Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers Physica Status Solidi B-Basic Solid State Physics. 222: 261-277. DOI: 10.1002/1521-3951(200011)222:1<261::Aid-Pssb261>3.0.Co;2-5 |
0.315 |
|
| 1999 |
Siegle H, Kim Y, Sudhir GS, Kruger J, Perlin P, Ager JW, Kislelowski C, Weber ER. High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001) Mrs Proceedings. 572: 451. DOI: 10.1557/Proc-572-451 |
0.771 |
|
| 1999 |
Ruvimov S, Liliental-Weber Z, Washburn J, Kim Y, Sudhir GS, Krueger J, Weber ER. Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer Materials Research Society Symposium - Proceedings. 572: 295-300. DOI: 10.1557/Proc-572-295 |
0.775 |
|
| 1999 |
Krüiger J, Shapiro N, Subramanya S, Kim Y, Siegle H, Perlin P, Weber ER, Wong WS, Sands T, Cheung NW, Molnar RJ. The influence of the sapphire substrate on the temperature dependence of the GaN bandgap Mrs Proceedings. 572: 289. DOI: 10.1557/Proc-572-289 |
0.779 |
|
| 1999 |
Cich MJ, Zhao R, Park Y, Specht P, Weber ER. ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs Mrs Proceedings. 570: 129. DOI: 10.1557/Proc-570-129 |
0.775 |
|
| 1999 |
Specht P, Lutz RC, Zhao R, Weber ER, Liu WK, Bacher K, Towner FJ, Stewart TR, Luysberg M. Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C Journal of Vacuum Science & Technology B. 17: 1200-1204. DOI: 10.1116/1.590747 |
0.611 |
|
| 1999 |
Mars DE, Babic DI, Kaneko Y, Chang Y, Subramanya S, Kruger J, Perlin P, Weber ER. Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy Journal of Vacuum Science & Technology B. 17: 1272-1275. DOI: 10.1116/1.590738 |
0.364 |
|
| 1999 |
Cho Y, Kim Y, Weber ER, Ruvimov S, Liliental-Weber Z. Chemical And Structural Transformation Of Sapphire (Al2O3) Surface By Plasma Source Nitridation Journal of Applied Physics. 85: 7909-7913. DOI: 10.1063/1.370606 |
0.758 |
|
| 1999 |
Perlin P, Mattos L, Shapiro NA, Kruger J, Wong WS, Sands T, Cheung NW, Weber ER. Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate Journal of Applied Physics. 85: 2385-2389. DOI: 10.1063/1.369554 |
0.69 |
|
| 1999 |
Maltez RL, Liliental-Weber Z, Washburn J, Behar M, Klein PB, Specht P, Weber ER. Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs Journal of Applied Physics. 85: 1105-1113. DOI: 10.1063/1.369236 |
0.312 |
|
| 1999 |
Colton JS, Yu PY, Teo KL, Weber ER, Perlin P, Grzegory I, Uchida K. Selective excitation and thermal quenching of the yellow luminescence of GaN Applied Physics Letters. 75: 3273-3275. DOI: 10.1063/1.125322 |
0.318 |
|
| 1999 |
Wong WS, Cho Y, Weber ER, Sands T, Yu KM, Krüger J, Wengrow AB, Cheung NW. Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off Applied Physics Letters. 75: 1887-1889. DOI: 10.1063/1.124861 |
0.413 |
|
| 1999 |
Haiml M, Siegner U, Morier-Genoud F, Keller U, Luysberg M, Lutz RC, Specht P, Weber ER. Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies Applied Physics Letters. 74: 3134-3136. DOI: 10.1063/1.124086 |
0.357 |
|
| 1999 |
Haiml M, Siegner U, Morier-Genoud F, Keller U, Luysberg M, Specht P, Weber ER. Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs Applied Physics Letters. 74: 1269-1271. DOI: 10.1063/1.123521 |
0.353 |
|
| 1999 |
Khang Y, Park Y, Salmeron M, Weber ER. Low temperature ultrahigh vacuum cross-sectional scanning tunneling microscope for luminescence measurements Review of Scientific Instruments. 70: 4595-4599. DOI: 10.1063/1.1150118 |
0.412 |
|
| 1999 |
Heiser T, Istratov AA, Flink C, Weber ER. Electrical characterization of copper related defect reactions in silicon Materials Science and Engineering B-Advanced Functional Solid-State Materials. 58: 149-154. DOI: 10.1016/S0921-5107(98)00287-6 |
0.306 |
|
| 1999 |
Siegner U, Haiml M, Morier-Genoud F, Lutz RC, Specht P, Weber ER, Keller U. Femtosecond nonlinear optics of low-temperature grown semiconductors Physica B-Condensed Matter. 273: 733-736. DOI: 10.1016/S0921-4526(99)00625-0 |
0.307 |
|
| 1999 |
Lutz RC, Specht P, Zhao R, Lam OH, Borner F, Gebauer J, Krause-Rehberg R, Weber ER. Native point defect analysis in non-stoichiometric GaAs: An annealing study Physica B: Condensed Matter. 273: 722-724. DOI: 10.1016/S0921-4526(99)00621-3 |
0.588 |
|
| 1999 |
Feick H, Weber ER. Annealing of the photoluminescence W-center in proton-irradiated silicon Physica B-Condensed Matter. 273: 497-500. DOI: 10.1016/S0921-4526(99)00536-0 |
0.321 |
|
| 1999 |
Hieslmair H, Istratov AA, Flink C, McHugo SA, Weber ER. Experiments and computer simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level Physica B-Condensed Matter. 273: 441-444. DOI: 10.1016/S0921-4526(99)00500-1 |
0.303 |
|
| 1999 |
Flink C, Feick H, McHugo SA, Mohammed A, Seifert W, Hieslmair H, Heiser T, Istratov AA, Weber ER. Formation of copper precipitates in silicon Physica B-Condensed Matter. 273: 437-440. DOI: 10.1016/S0921-4526(99)00499-8 |
0.336 |
|
| 1999 |
McHugo SA, Thompson AC, Lamble G, Flink C, Weber ER. Metal impurity precipitates in silicon: chemical state and stability Physica B-Condensed Matter. 273: 371-374. DOI: 10.1016/S0921-4526(99)00480-9 |
0.321 |
|
| 1999 |
Colton JS, Yu PY, Teo KL, Perlin P, Weber ER, Grzegory I, Uchida K. Selective excitation of the yellow luminescence of GaN Physica B: Condensed Matter. 273: 75-79. DOI: 10.1016/S0921-4526(99)00410-X |
0.304 |
|
| 1999 |
Jäger ND, Weber ER. Chapter 5 Scanning Tunneling Microscopy of Defects in Semiconductors Semiconductors and Semimetals. 51: 261-296. DOI: 10.1016/S0080-8784(08)62978-6 |
0.316 |
|
| 1999 |
Willardson RK, Weber ER. Semiconductors and Semimetals Semiconductors and Semimetals. 61. DOI: 10.1016/S0080-8784(08)62698-8 |
0.328 |
|
| 1999 |
Liu WK, Bacher K, Towner FJ, Stewart TR, Reed C, Specht P, Lutz RC, Zhao R, Weber ER. Properties of C-doped LT-GaAs grown by MBE using CBr4 Journal of Crystal Growth. 201202: 217-220. DOI: 10.1016/S0022-0248(98)01325-6 |
0.619 |
|
| 1998 |
Knobloch K, Perlin P, Krueger J, Weber ER, Kisielowski C. Effect of internal absorption on cathodoluminescence from GaN Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000764 |
0.355 |
|
| 1998 |
Flink C, Mui S, Gottschalk H, Palm J, Weber ER. Formation of Subthreshold Defects in Erbium Implanted Silicon Mrs Proceedings. 532: 177. DOI: 10.1557/Proc-532-177 |
0.305 |
|
| 1998 |
Lorusso GF, Solak H, Cerrina F, Underwood JH, Batson PJ, Kim Y, Cho Y, Kisielowski C, Krueger J, Weber ER. X-Ray Photoemission Spectromicroscopy Of Gan And AIGan Mrs Proceedings. 512: 393. DOI: 10.1557/Proc-512-393 |
0.745 |
|
| 1998 |
Perlin P, Kisielowski C, Mattos L, Shapiro NA, Kruger J, Yang J, Weber ER. The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells Mrs Proceedings. 512: 187. DOI: 10.1557/Proc-512-187 |
0.66 |
|
| 1998 |
Lutz RC, Specht P, Zhao R, Jeong S, Bokor J, Weber ER. Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping Mrs Proceedings. 510: 55. DOI: 10.1557/Proc-510-55 |
0.519 |
|
| 1998 |
McHugo SA, McDonald RJ, Smith AR, Hurley DL, Istratov AA, Hieslmair H, Weber ER. Iron and Nickel Solubilities in Heavily Doped Silicon and their Energy Levels in the Silicon Band Gap at Elevated Temperatures Mrs Proceedings. 510: 361. DOI: 10.1557/Proc-510-361 |
0.345 |
|
| 1998 |
Istratov AA, Hedemann H, Seibt M, Vyvenko OF, Schröter W, Heiser T, Flink C, Hieslmair H, Weber ER. Electrical and recombination properties of copper-silicide precipitates in silicon Journal of the Electrochemical Society. 145: 3889-3898. DOI: 10.1149/1.1838889 |
0.353 |
|
| 1998 |
Istratov AA, Flink C, Hieslmair H, Weber ER, Heiser T. Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon Physical Review Letters. 81: 1243-1246. DOI: 10.1103/Physrevlett.81.1243 |
0.31 |
|
| 1998 |
Prasad A, Stallinga P, Liu X, Weber ER. Origin of the magnetic circular dichroism of absorption of the arsenic antisite in GaAs andAlxGa1−xAs Physical Review B. 57: R4214-R4217. DOI: 10.1103/Physrevb.57.R4214 |
0.341 |
|
| 1998 |
Luysberg M, Sohn H, Prasad A, Specht P, Liliental-Weber Z, Weber ER, Gebauer J, Krause-Rehberg R. Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs Journal of Applied Physics. 83: 561-566. DOI: 10.1063/1.366723 |
0.462 |
|
| 1998 |
Perlin P, Subramanya SG, Mars DE, Kruger J, Shapiro NA, Siegle H, Weber ER. Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer Applied Physics Letters. 73: 3703-3705. DOI: 10.1063/1.122869 |
0.704 |
|
| 1998 |
Perlin P, Kisielowski C, Iota V, Weinstein BA, Mattos L, Shapiro NA, Kruger J, Weber ER, Yang J. InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy Applied Physics Letters. 73: 2778-2780. DOI: 10.1063/1.122588 |
0.7 |
|
| 1998 |
Maltez RL, Liliental-Weber Z, Washburn J, Behar M, Klein PB, Specht P, Weber ER. Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be Applied Physics Letters. 73: 2170-2172. DOI: 10.1063/1.122412 |
0.308 |
|
| 1998 |
Teo KL, Colton JS, Yu PY, Weber ER, Li MF, Liu W, Uchida K, Tokunaga H, Akutsu N, Matsumoto K. An analysis of temperature dependent photoluminescence line shapes in InGaN Applied Physics Letters. 73: 1697-1699. DOI: 10.1063/1.122249 |
0.341 |
|
| 1998 |
McHugo SA, McDonald RJ, Smith AR, Hurley DL, Weber ER. Iron solubility in highly boron-doped silicon Applied Physics Letters. 73: 1424-1426. DOI: 10.1063/1.121964 |
0.328 |
|
| 1998 |
Ustinov VM, Weber ER, Ruvimov S, Liliental-Weber Z, Zhukov AE, Egorov AY, Kovsh AR, Tsatsul’nikov AF, Kop’ev PS. Effect of matrix on InAs self-organized quantum dots on InP substrate Applied Physics Letters. 72: 362-364. DOI: 10.1063/1.120737 |
0.321 |
|
| 1998 |
Mo S, Peiner E, Schlachetzki A, Klockenbrink R, Weber ER. Selected-area electron-channeling pattern as a characterization method for heteroepitaxial layers Materials Science and Engineering B-Advanced Functional Solid-State Materials. 56: 37-42. DOI: 10.1016/S0921-5107(98)00254-2 |
0.354 |
|
| 1998 |
Sudhir GS, Fujii H, Wong WS, Kisielowski C, Newman N, Dieker C, Liliental-Weber Z, Rubin MD, Weber ER. Pulsed laser deposition of aluminum nitride and gallium nitride thin films Applied Surface Science. 127: 471-476. DOI: 10.1016/S0169-4332(97)00675-2 |
0.345 |
|
| 1998 |
Sudhir GS, Fujii H, Wong WS, Kisielowski C, Newman N, Dieker C, Liliental-Weber Z, Rubin MD, Weber ER. Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition Journal of Electronic Materials. 27: 215-221. DOI: 10.1007/S11664-998-0390-Y |
0.355 |
|
| 1998 |
Rouvimov S, Liliental-Weber Z, Swider W, Washburn J, Weber ER, Sasaki A, Wakahara A, Furkawa Y, Abe T, Noda S. Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix Journal of Electronic Materials. 27: 427-432. DOI: 10.1007/S11664-998-0172-6 |
0.368 |
|
| 1998 |
Heinrich AJ, Wenderoth M, Rosentreter MA, Engel K, Schneider MA, Ulbrich RG, Weber ER, Uchida K. Ordering in ternary compound semiconductors studied with cross-sectional scanning tunneling microscopy Applied Physics A. 66: 959-962. DOI: 10.1007/S003390051274 |
0.363 |
|
| 1998 |
Istratov AA, Weber ER. Electrical properties and recombination activity of copper, nickel and cobalt in silicon Applied Physics A. 66: 123-136. DOI: 10.1007/S003390050649 |
0.306 |
|
| 1997 |
McHugo SA, Thompson AC, Imaizumi M, Hieslmair H, Weber ER. Rate limiting mechanism of transition metal gettering in multicrystalline silicon Materials Science Forum. 1795-1800. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1795 |
0.33 |
|
| 1997 |
Krüger J, Corlatan D, Kisielowski-Kemmerich C, Kim Y, Klockenbrink R, Sudhir GS, Rubin M, Weber ER. Photoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaN Materials Science Forum. 1191-1196. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1191 |
0.746 |
|
| 1997 |
Gebauer J, Krause-Rehberg R, Eichler S, Bauer-Kugelmann W, Kögel G, Triftshäuser W, Luysberg M, Sohn H, Weber ER. Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons Materials Science Forum. 204-208. DOI: 10.4028/Www.Scientific.Net/Msf.255-257.204 |
0.341 |
|
| 1997 |
Corlatan D, Krüger J, Kisielowski C, Klockenbrink R, Kim Y, Sudhir GS, Peyrot Y, Rubin M, Weber ER. Photoluminescence Characterization of p-type GaN:Mg Mrs Proceedings. 482: 673. DOI: 10.1557/Proc-482-673 |
0.717 |
|
| 1997 |
Sudhir GS, Peyrot Y, Krüger J, Kim Y, Klockenbrink R, Kisielowski C, Rubin MD, Weber ER, Kriegseis W, Meyer BK. Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films Mrs Proceedings. 482. DOI: 10.1557/Proc-482-525 |
0.758 |
|
| 1997 |
Wetzel C, Amano H, Akasaki I, Suski T, Ager JW, Weber ER, Haller EE, Meyer BK. Localized Donors in Gan: Spectroscopy Using Large Pressures Mrs Proceedings. 482. DOI: 10.1557/Proc-482-489 |
0.35 |
|
| 1997 |
Cho Y, Rouvimov S, Kim Y, Liliental-Weber Z, Weber ER. Chemical and Structural Analysis of Nitridated Sapphire Mrs Proceedings. 482: 45. DOI: 10.1557/Proc-482-45 |
0.717 |
|
| 1997 |
Krüger J, Sudhir GS, Corlatan D, Cho Y, Kim V, Klockenbrink R, Rouvimov S, Liliental-Weber Z, Kisielowski C, Rubin M, Weber ER, McDermott B, Pittman R, Gertner ER. Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire Mrs Proceedings. 482: 447. DOI: 10.1557/Proc-482-447 |
0.401 |
|
| 1997 |
Kim Y, Klockenbrink R, Kisielowski C, Krueger J, Corlatan D, Sudhir GS, Peyrot Y, Cho Y, Rubin M, Weber ER. Stress Controlled MBE-growth of GaN:Mg and GaN:Si Mrs Proceedings. 482: 217. DOI: 10.1557/Proc-482-217 |
0.74 |
|
| 1997 |
Klockenbrink R, Kim Y, Leung MSH, Kisielowski C, Krüger J, Sudhir GS, Rubin M, Weber ER. MBE-Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant Mrs Proceedings. 468: 75. DOI: 10.1557/Proc-468-75 |
0.752 |
|
| 1997 |
Krüger J, Kisielowski C, Klockenbrink R, Sudhir GS, Kim Y, Rubin M, Weber ER. Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum Well Structures Mrs Proceedings. 468: 299. DOI: 10.1557/Proc-468-299 |
0.736 |
|
| 1997 |
Wong WS, Schloss LF, Sudhir GS, Linder BP, Yu KM, Weber ER, Sands T, Cheung NW. Pulsed excimer laser processing of AlN/GaN thin films Materials Research Society Symposium - Proceedings. 449: 1011-1016. DOI: 10.1557/Proc-449-1011 |
0.324 |
|
| 1997 |
Wetzel C, Suski T, Iii JWA, Weber ER, Haller EE, Fischer S, Meyer BK, Molnar RJ, Perlin P. Pressure Induced Deep Gap State Of Oxygen In Gan Physical Review Letters. 78: 3923-3926. DOI: 10.1103/Physrevlett.78.3923 |
0.317 |
|
| 1997 |
Leon R, Williams DRM, Krueger J, Weber ER, Melloch MR. Diffusivity transients and radiative recombination in intermixed In{sub 0.5}Ga{sub 0.5}As/GaAs quantum structures Physical Review B. 56. DOI: 10.1103/Physrevb.56.R4336 |
0.334 |
|
| 1997 |
Istratov AA, Hieslmair H, Flink C, Heiser T, Weber ER. Interstitial copper-related center in n-type silicon Applied Physics Letters. 71: 2349-2351. DOI: 10.1063/1.120026 |
0.342 |
|
| 1997 |
Gebauer J, Krause-Rehberg R, Eichler S, Luysberg M, Sohn H, Weber ER. Ga Vacancies In Low-Temperature-Grown Gaas Identified By Slow Positrons Applied Physics Letters. 71: 638-640. DOI: 10.1063/1.119814 |
0.412 |
|
| 1997 |
Istratov AA, Flink C, Hieslmair H, Heiser T, Weber ER. Influence of interstitial copper on diffusion length and lifetime of minority carriers in p-type silicon Applied Physics Letters. 71: 2121-2123. DOI: 10.1063/1.119355 |
0.303 |
|
| 1997 |
McHugo SA, Hieslmair H, Weber ER. Gettering of metallic impurities in photovoltaic silicon Applied Physics A. 64: 127-137. DOI: 10.1007/S003390050453 |
0.361 |
|
| 1996 |
Kisielowski C, Krüger J, Ruvimov S, Suski T, Ager JW, Jones E, Liliental-Weber Z, Rubin M, Weber ER, Bremser MD, Davis RF. Strain-related phenomena in GaN thin films Physical Review B. 54: 17745-17753. PMID 9985904 DOI: 10.1103/Physrevb.54.17745 |
0.355 |
|
| 1996 |
Fujii H, Kisielowski C, Krueger J, Leung MSH, Klockenbrink R, Rubin M, Weber ER. Impact of growth temperature, pressure and strain on the morphology of GaN films Mrs Proceedings. 449. DOI: 10.1557/Proc-449-227 |
0.373 |
|
| 1996 |
Leung MSH, Klockenbrink R, Kisielowski C, Fujii H, Krüger J, Sudhir GS, Anders A, Liliental-Weber Z, Rubin M, Weber ER. Pressure controlled GaN MBE growth using a hollow anode nitrogen ion source Mrs Proceedings. 449. DOI: 10.1557/Proc-449-221 |
0.364 |
|
| 1996 |
Luysberg M, Sohn H, Prasad A, Specht P, Fujioka H, Klockenbrink R, Weber ER. Electrical and structural properties of LT-GaAs: influence of As/Ga flux ratio and growth temperature Mrs Proceedings. 442: 485-490. DOI: 10.1557/Proc-442-485 |
0.395 |
|
| 1996 |
McHugo SA, Hieslmair H, Weber ER, Rosenblum, Kalejs JP. Interactions of structural defects with metallic impurities in multicrystalline silicon Mrs Proceedings. 442. DOI: 10.1557/Proc-442-261 |
0.321 |
|
| 1996 |
McHugo SA, Weber ER, Myers SM, Petersen GA. Competition Between Gettering by Implantation-Induced Cavities in Silicon and Internal Gettering Associated with SiO 2 Precipitation Mrs Proceedings. 439: 149. DOI: 10.1557/Proc-439-149 |
0.332 |
|
| 1996 |
Suski T, Krueger J, Kisielowski C, Phatak P, Leung MSH, Liliental-Weber Z, Gassmann A, Newman N, Rubin MD, Weber ER, Grzegory I, Jun J, Bockowski M, Porowski S, Helava HI. Properties Of Homoepitaxially Mbe-Grown Gan Mrs Proceedings. 423. DOI: 10.1557/Proc-423-329 |
0.418 |
|
| 1996 |
Gassmann A, Suski T, Newman N, Kisielowski C, Jones E, Weber ER, Liliental‐Weber Z, Rubin MD, Helava HI, Grzegory I, Bockowski M, Jun J, Porowski S. Homoepitaxial growth of GaN using molecular beam epitaxy Journal of Applied Physics. 80: 2195-2198. DOI: 10.1063/1.363112 |
0.424 |
|
| 1996 |
Walukiewicz W, Liliental‐Weber Z, Jasinski J, Almonte M, Prasad A, Haller EE, Weber ER, Grenier P, Whitaker JF. High resistivity and ultrafast carrier lifetime in argon implanted GaAs Applied Physics Letters. 69: 2569-2571. DOI: 10.1063/1.117702 |
0.325 |
|
| 1996 |
Ruvimov S, Liliental‐Weber Z, Suski T, Ager JW, Washburn J, Krueger J, Kisielowski C, Weber ER, Amano H, Akasaki I. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire Applied Physics Letters. 69: 990-992. DOI: 10.1063/1.117105 |
0.42 |
|
| 1996 |
Verma AK, Tu J, Smith JS, Fujioka H, Weber ER. Electrical characterization of low‐temperature Al0.3Ga0.7As using n‐i‐n structures Applied Physics Letters. 68: 699-701. DOI: 10.1063/1.116596 |
0.324 |
|
| 1996 |
Chan JS, Cheung NW, Schloss L, Jones E, Wong WS, Newman N, Liu X, Weber ER, Gassman A, Rubin MD. Thermal annealing characteristics of Si and Mg-implanted GaN thin films Applied Physics Letters. 68: 2702-2704. DOI: 10.1063/1.116314 |
0.379 |
|
| 1996 |
Rogalla M, Chen JW, Geppert R, Kienzle M, Irsigler R, Ludwig J, Runge K, Fiederle M, Benz KW, Schmid TH, Via Cd, Lauxtermann S, Liu X, Krueger J, Weber ER. Characterization of semi-insulating GaAs for detector application Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 380: 14-17. DOI: 10.1016/S0168-9002(96)00290-2 |
0.322 |
|
| 1996 |
Bailey J, McHugo SA, Hieslmair H, Weber ER. Efficiency-limiting defects in silicon solar cell material Journal of Electronic Materials. 25: 1417-1421. DOI: 10.1007/Bf02655376 |
0.314 |
|
| 1995 |
Lin XW, Liliental-Weber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Hasegawa T. Sn submonolayer-mediated Ge heteroepitaxy on Si(001). Physical Review B. 52: 16581-16587. PMID 9981057 DOI: 10.1103/Physrevb.52.16581 |
0.365 |
|
| 1995 |
Liliental-Weber Z, Ruvimov S, Kisielowski C, Chen Y, Swider W, Washburn J, Newman N, Gassmann A, Liu X, Schloss L, Weber E, Grzegory I, Bockowski M, Jun J, Suski T, et al. Structural Defects in Heteroepitaxial and Homoepitaxial GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-351 |
0.399 |
|
| 1995 |
Hieslmair H, McHugo S, Weber E. External Gettering Comparison and Structural Characterization of Single and Polycrystalline Silicon Mrs Proceedings. 378. DOI: 10.1557/Proc-378-327 |
0.303 |
|
| 1995 |
Lin XW, Liliental‐Weber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Hasegawa T. Ge/Si heterostructures grown by Sn-surfactant-mediated molecular beam epitaxy Journal of Vacuum Science & Technology B. 13: 1805-1809. DOI: 10.1116/1.587816 |
0.345 |
|
| 1995 |
Fujioka H, Krueger J, Prasad A, Liu X, Weber ER, Verma AK. Annealing dynamics of arsenic-rich GaAs formed by ion implantation Journal of Applied Physics. 78: 1470-1475. DOI: 10.1063/1.360235 |
0.385 |
|
| 1995 |
Verma AK, Smith JS, Fujioka H, Weber ER. Characterization of low‐temperature AlxGa1−xAs lattice properties using high resolution x‐ray diffraction Journal of Applied Physics. 77: 4452-4454. DOI: 10.1063/1.359473 |
0.38 |
|
| 1995 |
Sohn H, Weber ER, Nozaki S, Takahashi K. Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing Applied Physics Letters. 67: 1104-1106. DOI: 10.1063/1.114975 |
0.382 |
|
| 1995 |
Liu X, Prasad A, Nishio J, Weber ER, Liliental-Weber Z, Walukiewicz W. Native point defects in low-temperature-grown GaAs Applied Physics Letters. 67: 279. DOI: 10.1063/1.114782 |
0.419 |
|
| 1995 |
Liu X, Prasad A, Chen WM, Kurpiewski A, Stoschek A, Liliental‐Weber Z, Weber ER. Response to ‘‘Comment on ‘Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs’ ’’ [Appl. Phys. Lett. 67, 1331 (1995)] Applied Physics Letters. 67: 1333-1334. DOI: 10.1063/1.114531 |
0.395 |
|
| 1995 |
Fujioka H, Weber ER, Verma AK. Conduction mechanism in arsenic implanted GaAs Applied Physics Letters. 66: 2116-2118. DOI: 10.1063/1.113921 |
0.365 |
|
| 1995 |
Fujioka H, Weber ER, Verma AK. Transient current study of low‐temperature grown GaAs using an n‐i‐n structure Applied Physics Letters. 66: 2834-2836. DOI: 10.1063/1.113445 |
0.397 |
|
| 1995 |
Willardson RK, Beer AC, Weber ER. Semiconductors and Semimetals: A Treatise Semiconductors and Semimetals. 43. DOI: 10.1016/S0080-8784(13)60003-4 |
0.328 |
|
| 1995 |
Claverie A, Fujioka H, Laânab L, Liliental-Weber Z, Weber ER. Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical properties Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 96: 327-330. DOI: 10.1016/0168-583X(94)00511-7 |
0.422 |
|
| 1995 |
Zheng JF, Salmeron M, Weber ER. The effect of shallow donors and acceptors on AlAs/GaAs superlattices intermixing studied on atomic scale Solid State Communications. 93: 419-423. DOI: 10.1016/0038-1098(94)00810-8 |
0.377 |
|
| 1995 |
Fu TC, Newman N, Jones E, Chan JS, Liu X, Rubin MD, Cheung NW, Weber ER. The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy Journal of Electronic Materials. 24: 249-255. DOI: 10.1007/Bf02659683 |
0.367 |
|
| 1995 |
Werner M, Weber ER, Bartsch M, Messerschmidt U. Carrier injection enhanced dislocation glide in silicon Physica Status Solidi (a). 150: 337-341. DOI: 10.1002/Pssa.2211500130 |
0.369 |
|
| 1994 |
Dreszer P, Chen WM, Wasik D, Walukiewicz W, Liang BW, Tu CW, Weber ER. Properties of resonant localized donor level in low-temperature-grown InP Materials Science Forum. 143: 1081-1086. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1081 |
0.375 |
|
| 1994 |
Chen Y, Liu X, Weber E, Bourret ED, Liliental-Weber Z, Haller EE, Washburn J, Olego DJ, Dorman DR, Gaines JM, Tasker NR. Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions Applied Physics Letters. 65: 549-551. DOI: 10.1557/Proc-340-491 |
0.357 |
|
| 1994 |
Newman N, Fu T, Liu X, Liliental-Weber Z, Rubin M, Chan JS, Jones E, Ross JT, Tidswell I, Yu KM, Cheung N, Weber ER. Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy Mrs Proceedings. 339. DOI: 10.1557/Proc-339-483 |
0.378 |
|
| 1994 |
Lin XW, Liliental‐Weber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Nabetani Y. Molecular beam epitaxy of InAs and its interaction with a GaAs overlayer on vicinal GaAs (001) substrates Journal of Vacuum Science & Technology B. 12: 2562-2567. DOI: 10.1116/1.587802 |
0.411 |
|
| 1994 |
Zheng JF, Liu X, Weber ER, Ogletree DF, Salmeron M. Si donors (SiGa) in GaAs observed by scanning tunneling microscopy Journal of Vacuum Science & Technology B. 12: 2104-2106. DOI: 10.1116/1.587716 |
0.361 |
|
| 1994 |
Zheng JF, Ogletree DF, Walker J, Salmeron M, Weber ER. Cross‐sectional scanning tunneling microscopy of semiconductor vertical‐cavity surface‐emitting laser structure Journal of Vacuum Science & Technology B. 12: 2100-2103. DOI: 10.1116/1.587715 |
0.34 |
|
| 1994 |
Uchid K, Yu PY, Noto N, Liliental-weber Z, Weber ER. Comparison between photoluminescence and Raman scattering in disordered and ordered alloys of GaInP Philosophical Magazine Part B. 70: 453-466. DOI: 10.1080/01418639408240220 |
0.339 |
|
| 1994 |
Chen WM, Dreszer P, Prasad A, Kurpiewski A, Walukiewicz W, Weber ER, Sörman E, Monemar B, Liang BW, Tu CW. Origin of n‐type conductivity of low‐temperature grown InP Journal of Applied Physics. 76: 600-602. DOI: 10.1063/1.357052 |
0.342 |
|
| 1994 |
Lin XW, Washburn J, Liliental‐Weber Z, Weber ER, Sasaki A, Wakahara A, Nabetani Y. Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer Applied Physics Letters. 65: 1677-1679. DOI: 10.1063/1.112883 |
0.402 |
|
| 1994 |
He Y, El-Masry NA, Ramdani J, Bedair SM, McCormick TL, Nemanich RJ, Weber ER. Determination of excess phosphorus in low-temperature GaP grown by gas source molecular beam epitaxy Applied Physics Letters. 65: 1671-1673. DOI: 10.1063/1.112881 |
0.387 |
|
| 1994 |
Liu X, Prasad A, Chen WM, Kurpiewski A, Stoschek A, Liliental‐Weber Z, Weber ER. Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs Applied Physics Letters. 65: 3002-3004. DOI: 10.1063/1.112490 |
0.359 |
|
| 1994 |
Chen Y, Liu X, Weber E, Bourret ED, Liliental‐Weber Z, Haller EE, Washburn J, Olego DJ, Dorman DR, Gaines JM, Tasker NR. Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions Applied Physics Letters. 65: 549-551. DOI: 10.1063/1.112293 |
0.341 |
|
| 1993 |
Dreszer P, Chen WM, Seendripu K, Wolk JA, Walukiewicz W, Liang BW, Tu CW, Weber ER. Phosphorus antisite defects in low-temperature InP. Physical Review B. 47: 4111-4114. PMID 10006545 DOI: 10.1103/Physrevb.47.4111 |
0.381 |
|
| 1993 |
Uchida K, Seguy P, Wong H, Souza PL, Yu PY, Weber ER, Matsumoto K. Hydrostatic Pressure Dependence of Eg-100 meV Photoluminescence Emissions in n-Type AlGaAs Japanese Journal of Applied Physics. 32: 246-248. DOI: 10.7567/Jjaps.32S1.246 |
0.333 |
|
| 1993 |
Jäger ND, Dreszer P, Newman N, Verma AK, Liliental-Weber Z, Weber ER. Characterization of EL2 in Annealed LT-GaAs Materials Science Forum. 1599-1604. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1599 |
0.404 |
|
| 1993 |
Zheng JF, Liu X, Newman N, Weber ER, Ogletree DF, Salmeron MB. Scanning tunneling microscopy of Si donors in GaAs Materials Science Forum. 1319-1324. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1319 |
0.38 |
|
| 1993 |
Weber ZL, Fujioka H, Sohn H, Weber E. Improvement of the Structural Quality of GaAs Layers Grown on Si with LT-GaAs Intermediate Layer Mrs Proceedings. 325. DOI: 10.1557/PROC-325-377 |
0.31 |
|
| 1993 |
Werner P, Liliental-Weber Z, Swider W, Sohn H, Yau W, Baranowski J, Weber ER. Defects in GaAs bulk crystals and multi-layers caused by In diffusion Mrs Proceedings. 309: 487-491. DOI: 10.1557/Proc-309-487 |
0.438 |
|
| 1993 |
Sohn H, Weber ER, Tu J, Smith JS. Growth of Strain-Free GaAs on Si/Sapphire Mrs Proceedings. 308: 423-426. DOI: 10.1557/Proc-308-423 |
0.4 |
|
| 1993 |
Piotrowska A, Kamińska E, Lin XW, Liliental‐Weber Z, Washburn J, Weber E, Gierlotka S, Adamczewska J, Kwiatkowski S, Turos A. Annealing behavior of Au(Te)/n-GaAs contacts Journal of Vacuum Science & Technology B. 11: 572-580. DOI: 10.1116/1.586803 |
0.368 |
|
| 1993 |
Lin XW, Piotrowska A, Kaminska E, Liliental‐Weber Z, Washburn J, Weber E. Effects of Al2O3 cap on the structural and electrical properties of Au/Te/Au contacts on an n‐type GaAs substrate Applied Physics Letters. 62: 2995-2997. DOI: 10.1063/1.109168 |
0.356 |
|
| 1993 |
Kaminska M, Weber ER. Chapter 2 EL2 Defect in GaAs Semiconductors and Semimetals. 38: 59-89. DOI: 10.1016/S0080-8784(08)62798-2 |
0.354 |
|
| 1993 |
Korona KP, Kamińska M, Baranowski JM, Weber ER. Electro-optical measurement of low temperature GaAs Materials Science and Engineering B-Advanced Functional Solid-State Materials. 22: 41-44. DOI: 10.1016/0921-5107(93)90221-8 |
0.401 |
|
| 1993 |
Claverie A, Namavar F, Liliental-Weber Z, Dreszer P, Weber ER. Semi-insulating GaAs made by As implantation and thermal annealing Materials Science and Engineering B-Advanced Functional Solid-State Materials. 22: 37-40. DOI: 10.1016/0921-5107(93)90220-H |
0.379 |
|
| 1993 |
Kowalski G, Kurpiewski A, Kamińska M, Weber ER. EL2-like defects in low temperature GaAs Materials Science and Engineering B-Advanced Functional Solid-State Materials. 22: 27-30. DOI: 10.1016/0921-5107(93)90218-C |
0.401 |
|
| 1993 |
Fujioka H, Sohn H, Weber ER, Verma A. Application of low temperature GaAs to GaAs/Si Journal of Electronic Materials. 22: 1511-1514. DOI: 10.1007/Bf02650010 |
0.418 |
|
| 1993 |
Jäger ND, Verma AK, Dreszer P, Newman N, Liliental-Weber Z, Schilfgaarde Mv, Weber ER. First direct observation of EL2-like defect levels in annealed LT-GaAs Journal of Electronic Materials. 22: 1499-1502. DOI: 10.1007/Bf02650007 |
0.416 |
|
| 1993 |
Chen WM, Dreszer P, Weber ER, Sörman E, Monemar B, Liang BW, Tu CW. Optically detected magnetic resonance studies of low-temperature InP Journal of Electronic Materials. 22: 1491-1494. DOI: 10.1007/Bf02650005 |
0.339 |
|
| 1993 |
Dreszer P, Chen WM, Wasik D, Leon R, Walukiewicz W, Liang BW, Tu CW, Weber ER. Electronic properties of low-temperature InP Journal of Electronic Materials. 22: 1487-1490. DOI: 10.1007/Bf02650004 |
0.396 |
|
| 1993 |
Verma AK, Tu J, Smith JS, Fujioka H, Weber ER. Electrical characteristics of low temperature-Al 0.3 Ga 0.7 As Journal of Electronic Materials. 22: 1417-1420. DOI: 10.1007/Bf02649989 |
0.349 |
|
| 1993 |
Namavar F, Kalkhoran NM, Claverie A, Liliental-Weber Z, Weber ER, Sekula-Moisé PA, Vernon S, Haven V. Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers Journal of Electronic Materials. 22: 1409-1412. DOI: 10.1007/Bf02649987 |
0.369 |
|
| 1992 |
Liliental-Weber Z, Claverie A, Werner P, Schaff W, Weber ER. Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs Materials Science Forum. 1045-1050. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.1045 |
0.317 |
|
| 1992 |
Kaminska M, Weber ER. Low Temperature GaAs: Electrical and Optical Properties Materials Science Forum. 1033-1044. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.1033 |
0.304 |
|
| 1992 |
Lin XW, Liliental-Weber Z, Swider W, McCants T, Newman N, Spicer WE, Washburn J, Weber ER. Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface Mrs Proceedings. 281. DOI: 10.1557/Proc-281-665 |
0.426 |
|
| 1992 |
Werner P, Liliental-Weber Z, Yu KM, Weber ER, Rek Z, Metzger R. Tem Structure Investigations of Low-Temperature MBE Grown Inalas Layers on INP Substrate Mrs Proceedings. 263: 347. DOI: 10.1557/Proc-263-347 |
0.398 |
|
| 1992 |
Sohn H, Weber ER, Nozaki S, Konagai M, Takahashi K. The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy Mrs Proceedings. 262. DOI: 10.1557/Proc-262-129 |
0.421 |
|
| 1992 |
Korona KP, Wysmołek A, Bożek R, Kamińska M, Baranowski JM, Weber ER. Optical and Electrical Measurements of Low-Temperature InAlAs Acta Physica Polonica A. 82: 825-828. DOI: 10.12693/Aphyspola.82.825 |
0.421 |
|
| 1992 |
Korona KP, Muszalski J, Kamińska M, Weber ER. Deep Defects in Low-Temperature GaAs Acta Physica Polonica A. 82: 821-824. DOI: 10.12693/Aphyspola.82.821 |
0.348 |
|
| 1992 |
Karpińska K, Godlewski M, Żytkiewicz ZR, Chen WM, Weber ER. AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures Acta Physica Polonica A. 82: 713-716. DOI: 10.12693/Aphyspola.82.713 |
0.31 |
|
| 1992 |
Leon RP, Weber ER. A New Type Of Semi-Insulating Materials Acta Physica Polonica A. 82: 664-669. DOI: 10.12693/Aphyspola.82.664 |
0.389 |
|
| 1991 |
Baranowski JM, Liliental-Weber Z, Yau W-, Weber ER. Evidence for superconductivity in low-temperature--grown GaAs Physical Review Letters. 66: 3079-3082. PMID 10043693 DOI: 10.1103/Physrevlett.66.3079 |
0.408 |
|
| 1991 |
Bailey J, Weber ER, Opsal J, Rosencwaig A. Nonthermal laser-induced recrystallization of amorphous silicon. Physical Review B. 44: 13116-13119. PMID 9999504 DOI: 10.1103/Physrevb.44.13116 |
0.358 |
|
| 1991 |
Khachaturyan K, Weber ER, White RM. Surface Acoustic Wave Detection of Large Lattice Relaxation of Metastable EL2 in LT-GaAs Mrs Proceedings. 241. DOI: 10.1557/Proc-241-131 |
0.328 |
|
| 1991 |
Kowaljki G, Leszcjynski M, Kurpiewski A, Kaminska M, Suski T, Weber ER. X-Ray Diffraction Studies of Low Temperature GaAs Mrs Proceedings. 241. DOI: 10.1557/Proc-241-125 |
0.347 |
|
| 1991 |
Phatak P, Imaizumi M, Weber ER, Newman N, Liliental-Weber Z. The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties. Mrs Proceedings. 240. DOI: 10.1557/Proc-240-455 |
0.395 |
|
| 1991 |
Muszalski J, Babiński A, Korona KP, Kamińska E, Piotrowska A, Kamińska M, Weber ER. FFirst TSC and DLTS Measurements of Low Temperature GaAs Acta Physica Polonica A. 80: 413-416. DOI: 10.12693/Aphyspola.80.413 |
0.317 |
|
| 1991 |
Leszczynski M, Kowalski G, Kaminska M, Suski T, Weber ER. X-ray diffractometer as a tool for examining lattice relaxation phenomena Semiconductor Science and Technology. 6. DOI: 10.1088/0268-1242/6/10B/013 |
0.326 |
|
| 1991 |
Hoinkis M, Weber ER, Landstrass MI, Plano MA, Han S, Kania DR. Paramagnetic nitrogen in chemical vapor deposition diamond thin films Applied Physics Letters. 59: 1870-1871. DOI: 10.1063/1.106172 |
0.316 |
|
| 1991 |
George T, Weber ER, Nozaki S, Yamada T, Konagai M, Takahashi K. Critical thickness anisotropy in highly carbon‐doped p‐type (100)GaAs layers grown by metalorganic molecular beam epitaxy Applied Physics Letters. 59: 60-62. DOI: 10.1063/1.105522 |
0.416 |
|
| 1991 |
Li M, Yu PY, Weber ER. Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of the DX center in AlGaAs alloys Applied Physics Letters. 59: 1197-1199. DOI: 10.1063/1.105501 |
0.305 |
|
| 1991 |
Soga T, George T, Suzuki T, Jimbo T, Umeno M, Weber ER. Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition Applied Physics Letters. 58: 2108-2110. DOI: 10.1063/1.104975 |
0.365 |
|
| 1991 |
Soga T, George T, Jimbo T, Umeno M, Weber ER. Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition Applied Physics Letters. 58: 1170-1172. DOI: 10.1063/1.104354 |
0.433 |
|
| 1991 |
Lee HP, Liu X, Malloy K, Wang S, George T, Weber ER, Liliental-Weber Z. Structural characterizations of initial nucleation of gaas on si films grown by modulated molecular beam epitaxy Journal of Electronic Materials. 20: 179-186. DOI: 10.1007/Bf02653321 |
0.395 |
|
| 1990 |
Sohn H, Weber ER, Tu J, Wang S. A New Approach to Grow Strain-Free GaAs on Si Mrs Proceedings. 202: 609. DOI: 10.1557/Proc-202-609 |
0.304 |
|
| 1990 |
Sohn H, Weber ER, Tu J, Lee HP, Wang S. The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers. Mrs Proceedings. 198. DOI: 10.1557/Proc-198-45 |
0.412 |
|
| 1990 |
Lee HP, George T, Sohn H, Tu J, Weber ER, Wang S. Nucleation and Defect Structures of GaAs Films Grown on Reactive Ion Etched Si Substrates Mrs Proceedings. 198. DOI: 10.1557/Proc-198-225 |
0.364 |
|
| 1990 |
George T, Weber ER, Nozaki S, Wu AT, Umeno M. The Influence of Initial Growth on Defect Generation in Mocvd Grown GaAs/Si Heteroepitaxial Layers Mrs Proceedings. 198: 207. DOI: 10.1557/Proc-198-207 |
0.417 |
|
| 1990 |
Spicer WE, Liliental-Weber Z, Newman N, Weber ER, Spindt CJ. “Pinning” and Fermi level movement at GaAs surfaces and interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2084-2089. DOI: 10.1116/1.577007 |
0.335 |
|
| 1990 |
Whelan JS, George T, Weber ER, Nozaki S, Wu AT, Umeno M. Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained‐layer superlattices on heteroepitaxial GaAs/Si Journal of Applied Physics. 68: 5115-5118. DOI: 10.1063/1.347049 |
0.412 |
|
| 1990 |
George T, Weber ER, Nozaki S, Wu AT, Noto N, Umeno M. Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system Journal of Applied Physics. 67: 2441-2446. DOI: 10.1063/1.345490 |
0.422 |
|
| 1990 |
Liliental‐Weber Z, Weber ER, Washburn J, Weaver JH. Schottky barrier contacts on defect‐free GaAs (110) Applied Physics Letters. 56: 2507-2509. DOI: 10.1063/1.102873 |
0.389 |
|
| 1990 |
Bailey J, Weber ER, Opsal J. The mechanism of modulated optical reflectance imaging of dislocations in silicon Journal of Crystal Growth. 103: 217-225. DOI: 10.1016/0022-0248(90)90192-N |
0.352 |
|
| 1989 |
Hoinkis M, Weber ER. Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs. Physical Review B. 40: 3872-3877. PMID 9992357 DOI: 10.1103/Physrevb.40.3872 |
0.309 |
|
| 1989 |
Hoinkis M, Weber ER, Walukiewicz W, Lagowski J, Matsui M, Gatos HC, Meyer BK, Spaeth JM. Unification of the properties of the EL2 defect in GaAs. Physical Review. B, Condensed Matter. 39: 5538-5541. PMID 9948957 DOI: 10.1103/Physrevb.39.5538 |
0.315 |
|
| 1989 |
Li MF, Yu PY, Shan W, Hansen WL, Weber ER. Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si Materials Science Forum. 851-856. DOI: 10.4028/Www.Scientific.Net/Msf.38-41.851 |
0.324 |
|
| 1989 |
Liu X, Lee HP, Wang S, George T, Weber ER, Liliental-Weber Z. Growth and Characterizations of Gaas on Inp with Different Buffer Structures by Molecular Beam Epitaxy Mrs Proceedings. 148: 297. DOI: 10.1557/Proc-148-297 |
0.451 |
|
| 1989 |
George T, Weber ER, Wu AT, Nozaki S, Noto N, Umeno M. Nucleation Studies of Lattice Matched and Mis-Matched Heteroepitaxial Layers Using the GaAs/AlxGa1−xP/Si System. Mrs Proceedings. 148. DOI: 10.1557/Proc-148-253 |
0.373 |
|
| 1989 |
Lee HP, Lius X, Wang S, George T, Weber ER, Liliental-Weber Z. Initial Nucleation Studies of Heteroepitaxial GaAs films on Si Substrates by Modulated Molecular Beam Epitaxy Mrs Proceedings. 145. DOI: 10.1557/Proc-145-357 |
0.355 |
|
| 1989 |
Wu BJ, Wang KL, Mii YJ, Yoon YS, Wu AT, George T, Weber E. Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy Mrs Proceedings. 145. DOI: 10.1557/Proc-145-343 |
0.37 |
|
| 1989 |
Kaminska M, Weber ER, Liliental‐Weber Z, Leon R, Rek ZU. Stoichiometry‐related defects in GaAs grown by molecular‐beam epitaxy at low temperatures Journal of Vacuum Science & Technology B. 7: 710-713. DOI: 10.1116/1.584630 |
0.462 |
|
| 1989 |
Leon RP, Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes Journal of Applied Physics. 66: 711-715. DOI: 10.1063/1.343543 |
0.341 |
|
| 1989 |
Nozaki S, Murray JJ, Wu AT, George T, Weber ER, Umeno M. New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition Applied Physics Letters. 55: 1674-1676. DOI: 10.1063/1.102232 |
0.382 |
|
| 1989 |
George T, Weber ER, Nozaki S, Murray JJ, Wu AT, Umeno M. Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs Applied Physics Letters. 55: 2090-2092. DOI: 10.1063/1.102092 |
0.419 |
|
| 1989 |
Kaminska M, Liliental-Weber Z, Weber ER, George T, Kortright JB, Smith FW, Tsaur B-, Calawa AR. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures Applied Physics Letters. 54: 1881-1883. DOI: 10.1063/1.101229 |
0.453 |
|
| 1989 |
Lee HP, Liu X, Wang S, George T, Weber ER. Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy Applied Physics Letters. 54: 2695-2697. DOI: 10.1063/1.101018 |
0.403 |
|
| 1989 |
Liliental-Weber Z, Newman N, Washburn J, Weber ER, Spicer WE. Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts Applied Physics Letters. 54: 356-358. DOI: 10.1063/1.100968 |
0.391 |
|
| 1989 |
Li MF, Yu PY, Shan W, Hansen W, Weber ER. Effect of boron on the deep donors (DX centers) in GaAs:Si Applied Physics Letters. 54: 1344-1346. DOI: 10.1063/1.100710 |
0.303 |
|
| 1989 |
Liliental-Weber Z, Weber ER, Washburn J. HETEROEPITAXY OF GaAs ON Si: METHODS TO DECREASE THE DEFECT DENSITY IN THE EPILAYER Defect Control in Semiconductors. 1295-1305. DOI: 10.1016/B978-0-444-88429-9.50057-4 |
0.402 |
|
| 1989 |
Spicer WE, Cao R, Miyano K, Kendelewicz T, Lindau I, Weber E, Liliental-Weber Z, Newman N. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation Applied Surface Science. 41: 1-16. DOI: 10.1016/0169-4332(89)90026-3 |
0.454 |
|
| 1988 |
Liliental-Weber Z, Washburn J, Musgrave C, Weber ER, Zuleeg R, Lampert WV, Haas TW. New Al-Ni-Ge contacts on GaAs: Their structure and electrical properties Mrs Proceedings. 126. DOI: 10.1557/Proc-126-295 |
0.384 |
|
| 1988 |
Lee HP, Huang Y, Liu X, Lin H, Smith JS, Weber ER, Yu P, Wang S, Liliental-Weber Z. The Photoluminescence and TEM Studies of Patterned GaAs films on Si Substrate Grown by Molecular Beam Epitaxy Mrs Proceedings. 116. DOI: 10.1557/Proc-116-219 |
0.366 |
|
| 1988 |
Ding J, Liliental‐Weber Z, Weber ER, Washburn J, Fourkas RM, Cheung NW. Structure and electrical properties of TiN/GaAs Schottky contacts Applied Physics Letters. 52: 2160-2162. DOI: 10.1063/1.99564 |
0.389 |
|
| 1988 |
Jones KS, Sadana DK, Prussin S, Washburn J, Weber ER, Hamilton WJ. The formation of a continuous amorphous layer by room .. temperature implantation of boron into silicon Journal of Applied Physics. 63: 1414-1418. DOI: 10.1063/1.341122 |
0.365 |
|
| 1988 |
Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Schottky barrier instabilities due to contamination Applied Physics Letters. 53: 145-147. DOI: 10.1063/1.100351 |
0.349 |
|
| 1988 |
Liliental-Weber Z, Weber ER, Parechanian-Allen L, Washburn J. On the use of convergent-beam electron diffraction for identification of antiphase boundaries in GaAs grown on Si Ultramicroscopy. 26: 59-63. DOI: 10.1016/0304-3991(88)90377-4 |
0.351 |
|
| 1988 |
Spicer WE, Kendelewicz T, Newman N, Cao R, McCants C, Miyano K, Lindau I, Liliental-Weber Z, Weber ER. The advanced unified defect model and its applications Applied Surface Science. 33: 1009-1029. DOI: 10.1016/0169-4332(88)90411-4 |
0.382 |
|
| 1988 |
Allen LTP, Weber ER, Washburn J, Pao YC, Elliot AG. Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy Journal of Crystal Growth. 87: 193-200. DOI: 10.1016/0022-0248(88)90164-9 |
0.379 |
|
| 1988 |
Jones KS, Prussin S, Weber ER. A systematic analysis of defects in ion-implanted silicon Applied Physics a Solids and Surfaces. 45: 1-34. DOI: 10.1007/Bf00618760 |
0.357 |
|
| 1987 |
Li MF, Yu PY, Weber ER, Hansen W. Photocapacitance study of pressure-induced deep donors in GaAs:Si. Physical Review. B, Condensed Matter. 36: 4531-4534. PMID 9943456 DOI: 10.1103/Physrevb.36.4531 |
0.345 |
|
| 1987 |
Liliental-Weber Z, Weber ER, Washburn J, Liu TY, Kroemer H. THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS Mrs Proceedings. 91. DOI: 10.1557/Proc-91-91 |
0.432 |
|
| 1987 |
Li MF, Shan W, Yu PY, Hansen WL, Weber ER, Bauser E. Lattice relaxation of the DX centers in Ga/sub 1-x/Al/sub x/As and of the pressure-induced deep donors in GaAs Mrs Proceedings. 104. DOI: 10.1557/Proc-104-573 |
0.317 |
|
| 1987 |
Liliental-Weber Z, Miret-Goutier A, Newman N, Jou C, Spicer W, Washburn J, Weber E. The Influence of Current Stressing on the Structure of Ag Contacts to GaAs Mrs Proceedings. 102. DOI: 10.1557/Proc-102-241 |
0.312 |
|
| 1987 |
Coulman D, Newman N, Reid GA, Liliental-Weber Z, Weber ER, Spicer WE. A chemical and structural investigation of schottky and ohmic au/gaas contacts Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1521-1525. DOI: 10.1116/1.574595 |
0.363 |
|
| 1987 |
Allen LTP, Weber ER, Washburn J, Pao YC. Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy Applied Physics Letters. 51: 670-672. DOI: 10.1063/1.98329 |
0.377 |
|
| 1987 |
Jones KS, Prussin S, Weber ER. Enhanced elimination of implantation damage upon exceeding the solid solubility Journal of Applied Physics. 62: 4114-4117. DOI: 10.1063/1.339126 |
0.358 |
|
| 1986 |
Omling P, Weber ER, Samuelson L. Antisite-related defects in plastically deformed GaAs. Physical Review B. 33: 5880-5883. PMID 9939114 DOI: 10.1103/Physrevb.33.5880 |
0.314 |
|
| 1986 |
Liliental-Weber Z, Weber ER, Newman N, Spicer WE, Gronsky R, Washburn J. Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs Materials Science Forum. 1223-1228. DOI: 10.4028/Www.Scientific.Net/Msf.10-12.1223 |
0.38 |
|
| 1986 |
Parechanian-Allen L, Weber ER, Washburn J, Pao YC. Surface faceting of (110) GaAs: Analysis and elimination Mrs Proceedings. 82: 487. DOI: 10.1557/Proc-82-487 |
0.375 |
|
| 1986 |
Nauka K, Amano J, Scott MP, Weber ER, Turner JE, Tsai R. Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI 2 Fornation Mrs Proceedings. 71: 319. DOI: 10.1557/Proc-71-319 |
0.325 |
|
| 1986 |
Shih Y, Washburn J, Gronsky R, Weber ER. AMORPHIZATION OF SILICON BY BORON ION IMPLANTATION Materials Research Society Symposia Proceedings. 71: 203-209. DOI: 10.1557/Proc-71-203 |
0.304 |
|
| 1986 |
Colas EG, Weber ER, Hahn S. Intrinsic Gettering of Iron in Silicon: A Quantitative Study Mrs Proceedings. 71: 13. DOI: 10.1557/Proc-71-13 |
0.308 |
|
| 1986 |
Liliental-Weber Z, Washburn J, Newman N, Spicer WE, Weber ER. Morphology of Au/GaAs interfaces Applied Physics Letters. 49: 1514-1516. DOI: 10.1063/1.97318 |
0.37 |
|
| 1986 |
Weber ER. The formation of arsenic antisite defects during plastic deformation of GaAs Solid State Communications. 60: 871-872. DOI: 10.1016/0038-1098(86)90825-2 |
0.321 |
|
| 1985 |
Omling P, Weber ER, Montelius L, Alexander H, Michel J. Electrical properties of dislocations and point defects in plastically deformed silicon. Physical Review B. 32: 6571-6581. PMID 9936762 DOI: 10.1103/Physrevb.32.6571 |
0.339 |
|
| 1985 |
Liliental-Weber Z, Newman N, Spicer WE, Grónsky R, Washburn J, Weber ER. The Structure and Electrical Properties of Au Contacts to GaAs Mrs Proceedings. 54. DOI: 10.1557/Proc-54-415 |
0.374 |
|
| 1985 |
Parechanian LT, Weber ER, Hierl TL. GROWTH OF (110) GaAs/GaAs BY MOLECULAR BEAM EPITAXY Mrs Proceedings. 46: 391. DOI: 10.1557/Proc-46-391 |
0.471 |
|
| 1985 |
Weber ER. The Identification of Lattice Defects in GaAs and AlGaAs Mrs Proceedings. 46. DOI: 10.1557/Proc-46-169 |
0.325 |
|
| 1985 |
Shih Y, Washburn J, Weber ER, Gronsky R. The Formation Of Amorphous Silicon By Light Ion Damage Mrs Proceedings. 45. DOI: 10.1557/Proc-45-65 |
0.326 |
|
| 1985 |
Berg RS, Yu PY, Weber ER. Raman spectroscopy of intrinsic defects in electron and neutron irradiated GaAs Applied Physics Letters. 47: 515-517. DOI: 10.1063/1.96111 |
0.307 |
|
| 1984 |
Scott MP, Caubin L, Chen DC, Weber ER, Rose J, Tucker T. Transition Metal Contamination of Epitaxial Silicon Mrs Proceedings. 36. DOI: 10.1557/Proc-36-37 |
0.301 |
|
| 1984 |
Brotherton SD, Bradley P, Gill A, Weber ER. Electrical observation of the Au‐Fe complex in silicon Journal of Applied Physics. 55: 952-956. DOI: 10.1063/1.333149 |
0.327 |
|
| 1983 |
Weber ER, Alexander H. Deep Level Defects In Plastically Deformed Silicon Le Journal De Physique Colloques. 44. DOI: 10.1051/Jphyscol:1983438 |
0.315 |
|
| 1983 |
Alexander H, Kisielowski-Kemmerich C, Weber ER. Investigations of well defined dislocations in silicon Physica B-Condensed Matter. 116: 583-593. DOI: 10.1016/0378-4363(83)90311-X |
0.344 |
|
| 1983 |
Conzelmann H, Graff K, Weber ER. Chromium and Chromium-Boron Pairs in Silicon Applied Physics A. 30: 169-175. DOI: 10.1007/Bf00620536 |
0.345 |
|
| 1983 |
Weber ER. Transition metals in silicon Applied Physics A. 30: 1-22. DOI: 10.1007/Bf00617708 |
0.313 |
|
| 1982 |
Weber ER, Ennen H, Kaufmann U, Windscheif J, Schneider J, Wosinski T. Identification of AsGa antisites in plastically deformed GaAs Journal of Applied Physics. 53: 6140-6143. DOI: 10.1063/1.331577 |
0.366 |
|
| 1981 |
Weber E, Alexander H. A new EPR center due to dislocations in phosphorous doped silicon Solid State Communications. 37: 371-373. DOI: 10.1016/0038-1098(81)91208-4 |
0.343 |
|
| 1981 |
Weber E. EPR Studies of defects in silicon Crystal Research and Technology. 16: 209-215. DOI: 10.1002/Crat.19810160215 |
0.333 |
|
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