Year |
Citation |
Score |
2011 |
Fan Q, Lee F, Yadavalli K, Lee MS, Chuang C, El-Ghoroury H. Etching formation of GaN micro optoelectronic device array Proceedings of Spie. 7939: 793913. DOI: 10.1117/12.878579 |
0.386 |
|
2009 |
Zhao Z, Yadavalli K, Hao Z, Wang KL. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy. Nanotechnology. 20: 035304. PMID 19417293 DOI: 10.1088/0957-4484/20/3/035304 |
0.438 |
|
2008 |
He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy. Nanotechnology. 19: 455607. PMID 21832784 DOI: 10.1088/0957-4484/19/45/455607 |
0.423 |
|
2008 |
Orlov AO, Luo X, Yadavalli KK, Beloborodov IS, Snider GL. Using granular film to suppress charge leakage in a single-electron latch Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.075414 |
0.585 |
|
2008 |
Zhao Z, Hao Z, Yadavalli K, Wang KL, Jacob AP. Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer Applied Physics Letters. 92: 83111. DOI: 10.1063/1.2833700 |
0.388 |
|
2007 |
Yadavalli KK, Orlov AO, Timler JP, Lent CS, Snider GL. Fanout gate in quantum-dot cellular automata Nanotechnology. 18. DOI: 10.1088/0957-4484/18/37/375401 |
0.581 |
|
2005 |
Yadavalli KK, Orlov AO, Snider GL, Elam J. Aluminum oxide tunnel barriers for single electron memory devices Microelectronics Journal. 36: 272-276. DOI: 10.1016/J.Mejo.2005.02.024 |
0.61 |
|
2004 |
Yadavalli KK, Anderson NR, Orlova TA, Orlov AO, Snider GL, Elam J. Single electron memory devices utilizing Al 2O 3 tunnel oxide barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3119-3123. DOI: 10.1116/1.1821506 |
0.63 |
|
2003 |
Yadavalli KK, Orlov AO, Snider GL, Korotkov AN. Single electron memory devices: Toward background charge insensitive operation Journal of Vacuum Science & Technology B. 21: 2860-2864. DOI: 10.1116/1.1625957 |
0.651 |
|
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