Kameshwar K. Yadavalli, Ph.D. - Publications

Affiliations: 
2005 University of Notre Dame, Notre Dame, IN, United States 
Area:
Electronics and Electrical Engineering

9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Fan Q, Lee F, Yadavalli K, Lee MS, Chuang C, El-Ghoroury H. Etching formation of GaN micro optoelectronic device array Proceedings of Spie. 7939: 793913. DOI: 10.1117/12.878579  0.386
2009 Zhao Z, Yadavalli K, Hao Z, Wang KL. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy. Nanotechnology. 20: 035304. PMID 19417293 DOI: 10.1088/0957-4484/20/3/035304  0.438
2008 He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy. Nanotechnology. 19: 455607. PMID 21832784 DOI: 10.1088/0957-4484/19/45/455607  0.423
2008 Orlov AO, Luo X, Yadavalli KK, Beloborodov IS, Snider GL. Using granular film to suppress charge leakage in a single-electron latch Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.075414  0.585
2008 Zhao Z, Hao Z, Yadavalli K, Wang KL, Jacob AP. Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer Applied Physics Letters. 92: 83111. DOI: 10.1063/1.2833700  0.388
2007 Yadavalli KK, Orlov AO, Timler JP, Lent CS, Snider GL. Fanout gate in quantum-dot cellular automata Nanotechnology. 18. DOI: 10.1088/0957-4484/18/37/375401  0.581
2005 Yadavalli KK, Orlov AO, Snider GL, Elam J. Aluminum oxide tunnel barriers for single electron memory devices Microelectronics Journal. 36: 272-276. DOI: 10.1016/J.Mejo.2005.02.024  0.61
2004 Yadavalli KK, Anderson NR, Orlova TA, Orlov AO, Snider GL, Elam J. Single electron memory devices utilizing Al 2O 3 tunnel oxide barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3119-3123. DOI: 10.1116/1.1821506  0.63
2003 Yadavalli KK, Orlov AO, Snider GL, Korotkov AN. Single electron memory devices: Toward background charge insensitive operation Journal of Vacuum Science & Technology B. 21: 2860-2864. DOI: 10.1116/1.1625957  0.651
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