| Year |
Citation |
Score |
| 2020 |
Hunt CE, Carpenter A, Voss LF, Scott RC, Shao Q, Looker Q, Garafalo A, Mistyuk S, Durand C, Kumar A, Stroud J, van Benthem K. p-i-n High-Speed Photodiodes for X-Ray and Infrared Imagers Fabricated by In Situ-Doped APCVD Germanium Homoepitaxy Ieee Transactions On Electron Devices. 67: 3235-3241. DOI: 10.1109/Ted.2020.3006810 |
0.404 |
|
| 2020 |
Hall DL, Voss LF, Grivickas P, Bora M, Conway AM, Scajev P, Grivickas V. Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond Ieee Electron Device Letters. 1-1. DOI: 10.1109/Led.2020.2999821 |
0.367 |
|
| 2020 |
Grivickas P, Ščajev P, Kazuchits N, Mazanik A, Korolik O, Voss LF, Conway AM, Hall DL, Bora M, Subačius L, Bikbajevas V, Grivickas V. Carrier recombination parameters in diamond after surface boron implantation and annealing Journal of Applied Physics. 127: 245707. DOI: 10.1063/5.0004881 |
0.334 |
|
| 2019 |
Voss LF, Frye CD, Bora M, Hall DL, Grivickas PV, Conway AM. Maskless random antireflective nanotexturing of single crystal SiC Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 40601. DOI: 10.1116/1.5108513 |
0.353 |
|
| 2019 |
Bora M, Voss LF, Grivickas PV, Hall DL, Alameda JB, Kramer NJ, Torres AM, Conway AM. A Total Internal Reflection Photoconductive Switch Ieee Electron Device Letters. 40: 734-737. DOI: 10.1109/Led.2019.2903926 |
0.314 |
|
| 2019 |
Murphy JW, Voss LF, Frye CD, Shao Q, Kazkaz K, Stoyer MA, Henderson RA, Nikolic RJ. Design considerations for three-dimensional betavoltaics Aip Advances. 9: 65208. DOI: 10.1063/1.5097775 |
0.307 |
|
| 2018 |
Voss LF, Murphy JW, Shao Q, Henderson RA, Frye CD, Stoyer MA, Nikolic RJ. Selenium-iodide: A low melting point eutectic semiconductor Applied Physics Letters. 113: 242103. DOI: 10.1063/1.5060269 |
0.349 |
|
| 2017 |
Harrison SE, Voss LF, Torres AM, Frye CD, Shao Q, Nikolić RJ. Ultradeep electron cyclotron resonance plasma etching of GaN Journal of Vacuum Science and Technology. 35: 61303. DOI: 10.1116/1.4994829 |
0.366 |
|
| 2017 |
Carman L, Martinez HP, Voss L, Hunter S, Beck P, Zaitseva N, Payne SA, Irkhin P, Choi HH, Podzorov V. Solution-Grown Rubrene Crystals as Radiation Detecting Devices Ieee Transactions On Nuclear Science. 64: 781-788. DOI: 10.1109/Tns.2017.2652139 |
0.34 |
|
| 2015 |
Sampayan SE, Bora M, Brooksby C, Caporaso GJ, Conway A, Hawkins S, Hickman B, Holmes C, Nguyen H, Nikolic R, Palmer D, Voss L, Wang L, Waters A. High voltage wide bandgap photoconductive switching Materials Science Forum. 821: 871-874. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.871 |
0.307 |
|
| 2015 |
Nelson AJ, Swanberg EL, Voss LF, Graff RT, Conway AM, Nikolic RJ, Payne SA, Kim H, Cirignano L, Shah K. Auger compositional depth profiling of the metal contact-TlBr interface Proceedings of Spie - the International Society For Optical Engineering. 9595. DOI: 10.1117/12.2186653 |
0.418 |
|
| 2015 |
Frye CD, Kucheyev SO, Edgar JH, Voss LF, Conway AM, Shao Q, Nikoli? RJ. Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4917010 |
0.413 |
|
| 2015 |
Varley JB, Conway AM, Voss LF, Swanberg E, Graff RT, Nikolic RJ, Payne SA, Lordi V, Nelson AJ. Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors Physica Status Solidi (B) Basic Research. 252: 1266-1271. DOI: 10.1002/Pssb.201451662 |
0.399 |
|
| 2014 |
Nelson AJ, Swanberg EL, Voss LF, Graff RT, Conway AM, Nikolic RJ, Payne SA, Kim H, Cirignano L, Shah K. Oxidation/Reduction reactions at the metal contact-TlBr interface: An X-ray photoelectron spectroscopy study Proceedings of Spie - the International Society For Optical Engineering. 9213. DOI: 10.1117/12.2062037 |
0.417 |
|
| 2013 |
Nelson AJ, Lee JS, Stanford JA, Grant WK, Voss LF, Beck PR, Graff RT, Swanberg EL, Conway AM, Nikolic RJ, Payne SA, Kim H, Cirignano L, Shah K. Photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 8852. DOI: 10.1117/12.2021675 |
0.371 |
|
| 2013 |
Voss LF, Reinhardt CE, Graff RT, Conway AM, Shao Q, Nikolic RJ, Dar MA, Cheung CL. Analysis of strain in dielectric coated three dimensional Si micropillar arrays Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4826500 |
0.322 |
|
| 2013 |
Conway AM, Voss LF, Nelson AJ, Beck PR, Laurence TA, Graff RT, Nikolic RJ, Payne SA, Kim H, Cirignano LJ, Shah K. Fabrication methodology of enhanced stability room temperature TlBr gamma detectors Ieee Transactions On Nuclear Science. 60: 1231-1236. DOI: 10.1109/Tns.2013.2252363 |
0.363 |
|
| 2013 |
Voss LF, Conway AM, Nelson AJ, Beck PR, Graff RT, Nikolic RJ, Payne SA, Burger A, Chen H. Current reduction of CdZnTe via band gap engineering Ieee Transactions On Nuclear Science. 60: 1208-1212. DOI: 10.1109/Tns.2013.2247629 |
0.408 |
|
| 2013 |
Voss LF, Shao Q, Conway AM, Reinhardt CE, Graff RT, Nikolic RJ. Smooth bosch etch for improved si diodes Ieee Electron Device Letters. 34: 1226-1228. DOI: 10.1109/Led.2013.2278374 |
0.383 |
|
| 2013 |
Nelson AJ, Voss LF, Beck PR, Graff RT, Conway AM, Nikolic RJ, Payne SA, Lee JS, Kim H, Cirignano L, Shah K. X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors Journal of Applied Physics. 113. DOI: 10.1063/1.4801793 |
0.369 |
|
| 2013 |
Shao Q, Voss LF, Conway AM, Nikolic RJ, Dar MA, Cheung CL. High aspect ratio composite structures with 48.5% thermal neutron detection efficiency Applied Physics Letters. 102. DOI: 10.1063/1.4792703 |
0.323 |
|
| 2012 |
Shao Q, Radev RP, Conway AM, Voss LF, Wang TF, Nikolić RJ, Deo N, Cheung CL. Gamma discrimination in pillar structured thermal neutron: Detectors Proceedings of Spie - the International Society For Optical Engineering. 8358. DOI: 10.1117/12.918513 |
0.309 |
|
| 2011 |
Conway AM, Voss LF, Nelson AJ, Beck PR, Graff RT, Nikolic RJ, Payne SA, Kim H, Cirignano LJ, Shah K. Long-term room temperature stability of TlBr gamma detectors Proceedings of Spie - the International Society For Optical Engineering. 8142. DOI: 10.1117/12.896713 |
0.374 |
|
| 2011 |
Nikolic RJ, Shao Q, Voss LF, Conway AM, Radev R, Wang TF, Dar M, Deo N, Cheung CL, Fabris L, Britton CL, Ericson MN. Si pillar structured thermal neutron detectors: Fabrication challenges and performance expectations Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.885880 |
0.359 |
|
| 2010 |
Nikolic RJ, Conway AM, Radev R, Shao Q, Voss L, Wang TF, Brewer JR, Cheung CL, Fabris L, Britton CL, Ericson MN. Nine element Si-based pillar structured thermal neutron detector Proceedings of Spie - the International Society For Optical Engineering. 7805. DOI: 10.1117/12.862391 |
0.344 |
|
| 2010 |
Voss LF, Shao Q, Reinhardt CE, Graff RT, Conway AM, Nikolić RJ, Deo N, Cheung CL. Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 916-920. DOI: 10.1116/1.3478306 |
0.37 |
|
| 2010 |
Voss LF, Beck PR, Conway AM, Graff RT, Nikolic RJ, Nelson AJ, Payne SA. Surface current reduction in (211) oriented Cd0.46Zn 0.04Te.50 crystals by Ar bombardment Journal of Applied Physics. 108. DOI: 10.1063/1.3459859 |
0.323 |
|
| 2010 |
Nelson AJ, Laurence TA, Conway AM, Behymer EM, Sturm BW, Voss LF, Nikolic RJ, Payne SA, Mertiri A, Pabst G, Mandal KC, Burger A. Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications Materials Letters. 64: 393-395. DOI: 10.1016/J.Matlet.2009.11.027 |
0.387 |
|
| 2010 |
Voss LF, Reinhardt CE, Graff RT, Conway AM, Nikolić RJ, Deo N, Cheung CL. Etching of 10boron with SF 6-based electron cyclotron resonance plasmas for pillar-structured thermal neutron detectors Journal of Electronic Materials. 39: 263-267. DOI: 10.1007/S11664-009-1068-9 |
0.355 |
|
| 2009 |
Voss LF, Reinhardt CE, Graff RT, Conway AM, Nikolić RJ, Deo N, Cheung CL. Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10boron films Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 606: 821-823. DOI: 10.1016/J.Nima.2009.05.020 |
0.377 |
|
| 2008 |
Pearton S, Voss L, Khanna R, Lim W, Stafford L, Ren F, Dabiran A, Osinsky A. High Temperature Stable Contacts for GaN HEMTs and LEDs Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A01-04 |
0.693 |
|
| 2008 |
Voss LF, Ip K, Pearton SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA. SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 487-494. DOI: 10.1116/1.2837849 |
0.498 |
|
| 2008 |
Voss LF, Stafford L, Gila BP, Pearton SJ, Ren F. Ir-based diffusion barriers for Ohmic contacts to p-GaN Applied Surface Science. 254: 4134-4138. DOI: 10.1016/J.Apsusc.2007.12.046 |
0.539 |
|
| 2008 |
Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/Pssc.200778644 |
0.507 |
|
| 2007 |
Voss LF, Stafford L, Wright JS, Pearton SJ, Ren F, Kravchenko II. W2B and CrB2 diffusion barriers for Ni/Au contacts to p-GaN Applied Physics Letters. 91. DOI: 10.1063/1.2762280 |
0.433 |
|
| 2007 |
Stafford L, Voss LF, Pearton SJ, Wang HT, Ren F. Improved long-term thermal stability of InGaNGaN multiple quantum well light-emitting diodes using Ti B2 - And Ir-based p -Ohmic contacts Applied Physics Letters. 90. DOI: 10.1063/1.2748306 |
0.396 |
|
| 2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN Applied Physics Letters. 90. DOI: 10.1063/1.2742572 |
0.522 |
|
| 2007 |
Jun J, Chou B, Lin J, Phipps A, Shengwen X, Ngo K, Johnson D, Kasyap A, Nishida T, Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, ... Voss LF, et al. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes Solid-State Electronics. 51: 1018-1022. DOI: 10.1016/J.Sse.2007.05.019 |
0.347 |
|
| 2007 |
Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090 |
0.694 |
|
| 2007 |
Anderson T, Ren F, Kim J, Lin J, Hlad M, Gila B, Voss L, Pearton S, Bove P, Lahreche H, Thuret J. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates Journal of Electronic Materials. 37: 384-387. DOI: 10.1007/S11664-007-0326-Y |
0.477 |
|
| 2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN Journal of Electronic Materials. 36: 1662-1668. DOI: 10.1007/S11664-007-0277-3 |
0.515 |
|
| 2007 |
Voss LF, Stafford L, Thaler GT, Abernathy CR, Pearton SJ, Chen JJ, Ren F. Annealing and measurement temperature dependence of W 2B- and W 2B 5-based rectifying contacts to p-GaN Journal of Electronic Materials. 36: 384-390. DOI: 10.1007/S11664-006-0054-8 |
0.439 |
|
| 2006 |
Pearton SJ, Tien LC, Kim HS, Norton DP, Chen JJ, Wang HT, Kang BS, Ren F, Lim WT, Wright J, Khanna R, Voss LF, Stafford L, Jun J, Lin J. Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K01-05 |
0.643 |
|
| 2006 |
Anderson T, Ren F, Voss L, Hlad M, Gila BP, Pearton S, Covert L, Lin J, Thuret J, Lahreche H, Bove P. AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I16-02 |
0.478 |
|
| 2006 |
Voss L, Pearton SJ, Ren F, Bove P, Lahreche H, Thuret J. Electrical Performance of GaN Schottky Rectifiers on Si Substrates Journal of the Electrochemical Society. 153: G681. DOI: 10.1149/1.2202146 |
0.474 |
|
| 2006 |
Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2302. DOI: 10.1116/1.2348730 |
0.478 |
|
| 2006 |
Govorkov AV, Smirnov NB, Polyakov AY, Markov AV, Voss L, Pearton SJ. Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 790. DOI: 10.1116/1.2184322 |
0.507 |
|
| 2006 |
Stafford L, Voss LF, Pearton SJ, Chen JJ, Ren F. Schottky barrier height of boride-based rectifying contacts to p-GaN Applied Physics Letters. 89. DOI: 10.1063/1.2357855 |
0.48 |
|
| 2006 |
Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698 |
0.533 |
|
| 2006 |
Voss L, Khanna R, Pearton SJ, Ren F, Kravchenko I. Improved thermally stable ohmic contacts on p-GaN based on W2B Applied Physics Letters. 88: 12104. DOI: 10.1063/1.2161806 |
0.543 |
|
| 2006 |
Voss L, Pearton SJ, Ren F, Kravchenko II. ZrB2-based Ohmic contacts to p-GaN Applied Surface Science. 253: 1934-1938. DOI: 10.1016/J.Apsusc.2006.03.041 |
0.434 |
|
| 2006 |
Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO Applied Surface Science. 253: 1269-1273. DOI: 10.1016/J.Apsusc.2006.01.081 |
0.64 |
|
| 2006 |
Voss L, Khanna R, Pearton SJ, Ren F, Kravchenko II. Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN Applied Surface Science. 253: 1255-1259. DOI: 10.1016/J.Apsusc.2006.01.080 |
0.449 |
|
| 2006 |
Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries Applied Surface Science. 253: 889-894. DOI: 10.1016/J.Apsusc.2006.01.037 |
0.662 |
|
| 2006 |
Hlad M, Voss L, Gila B, Abernathy C, Pearton S, Ren F. Dry etching of MgCaO gate dielectric and passivation layers on GaN Applied Surface Science. 252: 8010-8014. DOI: 10.1016/J.Apsusc.2005.10.018 |
0.503 |
|
| 2006 |
Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Journal of Electronic Materials. 35: 680-684. DOI: 10.1007/S11664-006-0120-2 |
0.51 |
|
| 2005 |
Voss L, Gila BP, Pearton SJ, Wang H, Ren F. Characterization of bulk GaN rectifiers for hydrogen gas sensing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2373. DOI: 10.1116/1.2110343 |
0.487 |
|
| 2005 |
Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2136070 |
0.449 |
|
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