| Year |
Citation |
Score |
| 2019 |
Klahold WM, Choyke WJ, Devaty RP. Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC Materials Science Forum. 963: 341-345. DOI: 10.4028/Www.Scientific.Net/Msf.963.341 |
0.434 |
|
| 2018 |
Klahold WM, Choyke WJ, Devaty RP. High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC Materials Science Forum. 924: 239-244. DOI: 10.4028/Www.Scientific.Net/Msf.924.239 |
0.436 |
|
| 2017 |
Klahold W, Tabachnick C, Freedman G, Devaty RP, Choyke WJ. New Evidence for the Second Conduction Band in 4H SiC Materials Science Forum. 897: 250-253. DOI: 10.4028/Www.Scientific.Net/Msf.897.250 |
0.418 |
|
| 2014 |
Klahold WM, Devaty RP, Choyke WJ, Kawahara K, Kimoto T, Ohshima T. Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100°c and 1500°c and measurements of lifetime and photoluminescence Materials Science Forum. 778: 273-276. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.273 |
0.39 |
|
| 2013 |
Choyke WJ, Devaty RP. Fundamental Aspects of SiC Materials Science and Technology. 661-713. DOI: 10.1002/9783527603978.Mst0252 |
0.381 |
|
| 2012 |
Devaty RP, Yan F, Choyke WJ, Gali A, Kimoto T, Ohshima T. Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC Materials Science Forum. 717: 263-266. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.263 |
0.387 |
|
| 2012 |
Ivanov IG, Gällström A, Coble R, Devaty RP, Choyke WJ, Janzén E. Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy Materials Science Forum. 259-262. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.259 |
0.402 |
|
| 2012 |
Yan F, Devaty RP, Choyke WJ, Gali A, Kimoto T, Ohshima T, Pensl G. Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC Applied Physics Letters. 100. DOI: 10.1063/1.3699269 |
0.383 |
|
| 2011 |
Yan F, Espenlaub A, Devaty RP, Ohshima T, Choyke WJ. Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C Materials Science Forum. 237-240. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.237 |
0.342 |
|
| 2010 |
Choyke WJ, D'Urso B, Yan F, Devaty RP. Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC Materials Science Forum. 853-856. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.853 |
0.342 |
|
| 2010 |
Devaty RP, Clouter MJ, Ke Y, Choyke WJ. Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering Materials Science Forum. 447-450. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.447 |
0.351 |
|
| 2010 |
Beljakowa S, Reshanov SA, Zippelius B, Krieger M, Pensl G, Danno K, Kimoto T, Onoda S, Ohshima T, Yan F, Devaty RP, Choyke WJ. Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers Materials Science Forum. 427-430. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.427 |
0.4 |
|
| 2010 |
Reshanov SA, Beljakowa S, Zippelius B, Pensl G, Danno K, Alfieri G, Kimoto T, Onoda S, Ohshima T, Yan F, Devaty RP, Choyke WJ. Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons Materials Science Forum. 423-426. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.423 |
0.383 |
|
| 2010 |
Yan F, Devaty RP, Choyke WJ, Danno K, Alfieri G, Kimoto T, Onoda S, Ohshima T, Reshanov SA, Beljakowa S, Zippelius B, Pensl G. Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons Materials Science Forum. 419-422. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.419 |
0.436 |
|
| 2010 |
Yan F, Devaty RP, Choyke WJ, Kimoto T, Ohshima T, Pensl G, Gali A. New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC Materials Science Forum. 411-414. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.411 |
0.316 |
|
| 2009 |
Ke Y, Yan F, Devaty RP, Choyke WJ. Electrochemical Polishing of p-Type 4H SiC Materials Science Forum. 601-604. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.601 |
0.405 |
|
| 2009 |
Leach JH, Morkoç H, Ke Y, Devaty RP, Choyke WJ. Novel use of columnar porous silicon carbide structures as nanoimprint lithography stamps Materials Science Forum. 600: 871-874. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.871 |
0.358 |
|
| 2009 |
Zhou L, Ni X, Özgür Ü, Morkoç H, Devaty R, Choyke W, Smith DJ. Atomic structure of the m-plane AlN/SiC interface Journal of Crystal Growth. 311: 1456-1459. DOI: 10.1016/J.Jcrysgro.2008.12.047 |
0.352 |
|
| 2008 |
Reshanov SA, Pensl G, Danno K, Kimoto T, Hishiki S, Ohshima T, Yan F, Devaty RP, Choyke WJ. Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy Materials Science Forum. 417-420. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.417 |
0.408 |
|
| 2008 |
Ni X, Özgür Ü, Chevtchenko S, Nie J, Morkoç H, Devaty RP, Choyke WJ. Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition Materials Science Forum. 1273-1276. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1273 |
0.363 |
|
| 2007 |
Ke Y, Devaty RP, Choyke WJ. Nano-columnar pore formation in the photo-electrochemical etching of n-type 6H SiC Materials Science Forum. 741-744. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.741 |
0.413 |
|
| 2007 |
Clouter MJ, Ke Y, Devaty RP, Choyke WJ, Shishkin Y, Saddow SE. Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates Materials Science Forum. 415-418. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.415 |
0.442 |
|
| 2007 |
Reshanov SA, Pensl G, Danno K, Kimoto T, Hishiki S, Ohshima T, Itoh H, Yan F, Devaty RP, Choyke WJ. Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy Journal of Applied Physics. 102: 113702. DOI: 10.1063/1.2818050 |
0.397 |
|
| 2006 |
Andrews GT, Young CK, Polomska A, Clouter MJ, Ke Y, Devaty RP, Choyke WJ. Brillouin Spectra of Porous p-Type 6H-SiC Materials Science Forum. 747-750. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.747 |
0.419 |
|
| 2006 |
Ke Y, Moisson C, Gaan S, Feenstra RM, Devaty RP, Choyke WJ. A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC Materials Science Forum. 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.743 |
0.343 |
|
| 2006 |
Ke Y, Yan F, Devaty RP, Choyke WJ. Columnar Pore Growth in n-Type 6H SiC Materials Science Forum. 739-742. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.739 |
0.383 |
|
| 2006 |
Starke U, Lee WY, Coletti C, Saddow SE, Devaty RP, Choyke WJ. SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2) Materials Science Forum. 677-680. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.677 |
0.397 |
|
| 2006 |
Hornos T, Gali A, Devaty RP, Choyke WJ. A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers Materials Science Forum. 605-608. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.605 |
0.322 |
|
| 2006 |
Yan F, Devaty RP, Choyke WJ, Gali A, Bhat IB, Larkin DJ. Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC Materials Science Forum. 527: 585-588. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.585 |
0.479 |
|
| 2006 |
Shishkin Y, Ke Y, Yan F, Devaty RP, Choyke WJ, Saddow SE. CVD epitaxial growth of 4H-SiC on porous SiC substrates Materials Science Forum. 255-258. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.255 |
0.358 |
|
| 2006 |
Cantin JL, Von Bardeleben HJ, Ke Y, Devaty RP, Choyke WJ. Hydrogen passivation of carbon P b like centers at the 3C- and 4H-SiCSiO 2 interfaces in oxidized porous SiC Applied Physics Letters. 88. DOI: 10.1063/1.2179128 |
0.396 |
|
| 2006 |
Starke U, Lee WY, Coletti C, Saddow SE, Devaty RP, Choyke WJ. SiC pore surfaces: Surface studies of 4H-SiC(1 1̄-02) and 4H-SiC(1̄ 102̄) Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166484 |
0.404 |
|
| 2005 |
Anderson T, Barrett DL, Chen J, Emorhokpor E, Gupta A, Hopkins RH, Souzis AE, Tanner CD, Yoganathan M, Zwieback I, Choyke WJ, Devaty RP, Yan F. Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport Materials Science Forum. 9-12. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.9 |
0.406 |
|
| 2005 |
Yan F, Devaty RP, Choyke WJ, Gali A, Schmid F, Pensl G, Wagner G. Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC Materials Science Forum. 493-496. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.493 |
0.394 |
|
| 2005 |
Bardeleben HJv, Cantin JL, Vickridge I, Song YW, Dhar S, Feldman LC, Williams JR, Ke L, Shishkin Y, Devaty RP, Choyke WJ. Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC Materials Science Forum. 483: 277-280. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.277 |
0.347 |
|
| 2005 |
Von Bardeleben HJ, Cantin JL, Ke L, Shishkin Y, Devaty RP, Choyke WJ. Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals Materials Science Forum. 483: 273-276. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.273 |
0.334 |
|
| 2005 |
Shishkin Y, Ke Y, Devaty RP, Choyke WJ. A Short Synopsis of the Current Status of Porous SiC and GaN Materials Science Forum. 251-256. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.251 |
0.451 |
|
| 2005 |
Hornos T, Gali A, Devaty RP, Choyke WJ. Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study Applied Physics Letters. 87: 212114. DOI: 10.1063/1.2135493 |
0.315 |
|
| 2005 |
Shishkin Y, Ke Y, Devaty RP, Choyke WJ. Fabrication and morphology of porous p-type SiC Journal of Applied Physics. 97: 44908. DOI: 10.1063/1.1849432 |
0.404 |
|
| 2004 |
Cantin JL, von Bardeleben HJ, Shishkin Y, Ke Y, Devaty RP, Choyke WJ. Identification of the carbon dangling bond center at the 4H-SiC/SiO(2) interface by an EPR study in oxidized porous SiC. Physical Review Letters. 92: 015502. PMID 14753997 DOI: 10.1103/Physrevlett.92.015502 |
0.369 |
|
| 2004 |
Bai S, Yan F, Devaty RP, Choyke WJ, Grötzschel R, Wagner G, MacMillan MF. Photoluminescence Study of C-H and C-D Centers in 4H SiC Materials Science Forum. 589-592. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.589 |
0.442 |
|
| 2004 |
Bai S, Devaty RP, Choyke WJ, Kaiser U, Wagner G, MacMillan MF. Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells Materials Science Forum. 573-576. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.573 |
0.451 |
|
| 2004 |
Shishkin Y, Ke Y, Devaty RP, Choyke WJ. Porous Structure of Anodized p-Type 6H SiC Materials Science Forum. 1471-1474. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1471 |
0.413 |
|
| 2004 |
Shishkin Y, Choyke WJ, Devaty RP. Triangular Pore Formation in Highly Doped n-Type 4H SiC Materials Science Forum. 1467-1470. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1467 |
0.433 |
|
| 2004 |
Bardeleben HJv, Cantin JL, Shishkin Y, Devaty RP, Choyke WJ. Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC Materials Science Forum. 1457-1462. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1457 |
0.414 |
|
| 2004 |
Yoganathan M, Gupta A, Semenas E, Emorhokpor E, Martin C, Kerr T, Zwieback I, Souzis AE, Anderson T, Tanner C, Chen J, Barrett D, Hopkins R, Johnson C, Yan F, ... ... Devaty R, et al. Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.9 |
0.462 |
|
| 2004 |
Shishkin Y, Choyke WJ, Devaty RP. Photoelectrochemical etching of n-type 4H silicon carbide Journal of Applied Physics. 96: 2311-2322. DOI: 10.1063/1.1768612 |
0.411 |
|
| 2003 |
Bai S, Devaty RP, Choyke WJ, Kaiser U, Wagner G, MacMillan MF. Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix Applied Physics Letters. 83: 3171-3173. DOI: 10.1063/1.1618020 |
0.424 |
|
| 2002 |
Shigiltchoff O, Bai S, Devaty RP, Choyke WJ, Kimoto T, Hobgood HM, Neudeck PG, Porter LM. Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission Materials Science Forum. 705-708. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.705 |
0.739 |
|
| 2002 |
Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T. Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Materials Science Forum. 389: 589-592. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.589 |
0.415 |
|
| 2002 |
Choyke WJ, Devaty RP, Bai S, Gali A, Deák P, Pensl G. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC Materials Science Forum. 585-588. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.585 |
0.351 |
|
| 2002 |
Bai S, Ke Y, Shishkin Y, Shigiltchoff O, Devaty RP, Choyke WJ, Strauch D, Stojetz B, Dorner B, Hobgood D, Serrano J, Cardona M, Nagasawa H, Kimoto T, Porter LM. Four Current Examples of Characterization of Silicon Carbide Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K3.1 |
0.741 |
|
| 2002 |
Gali A, Heringer D, Deák P, Hajnal Z, Frauenheim T, Devaty RP, Choyke WJ. Isolated oxygen defects in3C- and4H-SiC: A theoretical study Physical Review B. 66. DOI: 10.1103/Physrevb.66.125208 |
0.324 |
|
| 2002 |
Gali A, Aradi B, Heringer D, Choyke WJ, Devaty RP, Bai S. Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect Applied Physics Letters. 80: 237-239. DOI: 10.1063/1.1432757 |
0.425 |
|
| 2001 |
Devaty RP, Bai S, Choyke WJ, Hobgood HM, Larkin DJ. Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy Materials Science Forum. 357-360. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.357 |
0.355 |
|
| 2001 |
Saddow SE, Mynbaeva M, Choyke WJ, Devaty RP, Bai S, Melnychuck G, Koshka Y, Dmitriev V, Wood CEC. SiC defect density reduction by epitaxy on porous surfaces Materials Science Forum. 353: 115-118. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.115 |
0.354 |
|
| 2001 |
Klettke O, Reshanov SA, Pensl G, Shishkin Y, Devaty RP, Choyke WJ. Electrical and optical properties of erbium-related centers in 6H silicon carbide Physica B-Condensed Matter. 308: 687-690. DOI: 10.1016/S0921-4526(01)00869-9 |
0.449 |
|
| 2001 |
Lee CD, Ramachandran V, Sagar A, Feenstra RM, Greve DW, Sarney WL, Salamanca-Riba L, Look DC, Bai S, Choyke WJ, Devaty RP. Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy Journal of Electronic Materials. 30: 162-169. DOI: 10.1007/S11664-001-0010-6 |
0.366 |
|
| 2001 |
Shishkin Y, Devaty R, Choyke W, Yun F, King T, Morko� H. Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions Physica Status Solidi (a). 188: 591-594. DOI: 10.1002/1521-396X(200112)188:2<591::Aid-Pssa591>3.0.Co;2-7 |
0.331 |
|
| 2000 |
Frank T, Pensl G, Bai S, Devaty RP, Choyke WJ. Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC Materials Science Forum. 753-756. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.753 |
0.396 |
|
| 2000 |
Rutsch G, Devaty RP, Choyke WJ, Langer DW, Rowland LB, Niemann E, Wischmeyer F. Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation Materials Science Forum. 733-736. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.733 |
0.382 |
|
| 2000 |
Shishkin Y, Devaty RP, Choyke WJ. Optical Lifetime Measurements in 4H SiC Materials Science Forum. 679-682. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.679 |
0.416 |
|
| 2000 |
Shishkin Y, Choyke WJ, Devaty RP, Achtziger N, Opfermann T, Witthuhn W. Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC Materials Science Forum. 639-642. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.639 |
0.475 |
|
| 2000 |
Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ. Differential Absorption Measurement of Valence Band Splittings in 4H SiC Materials Science Forum. 567-570. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.567 |
0.749 |
|
| 2000 |
Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ. Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC Materials Science Forum. 551-554. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.551 |
0.749 |
|
| 2000 |
Gali A, Deak P, Briddon P, Devaty R, Choyke W. Phosphorus-related deep donor in SiC Physical Review B. 61: 12602-12604. DOI: 10.1103/Physrevb.61.12602 |
0.306 |
|
| 1999 |
Sridhara SG, Eperjesi TJ, Devaty RP, Choyke WJ. Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths Materials Science and Engineering B-Advanced Functional Solid-State Materials. 229-233. DOI: 10.1016/S0921-5107(98)00508-X |
0.47 |
|
| 1999 |
Devaty RP, Choyke WJ, Sridhara SG, Clemen LL. Neutral aluminum and gallium four particle complexes in silicon carbide polytypes Materials Science and Engineering B-Advanced Functional Solid-State Materials. 61: 187-196. DOI: 10.1016/S0921-5107(98)00500-5 |
0.448 |
|
| 1998 |
Dalibor T, Pensl G, Yamamoto T, Kimoto T, Matsunami H, Sridhara SG, Nizhner DG, Devaty RP, Choyke WJ. Oxygen-Related Defect Centers in 4H Silicon Carbide Materials Science Forum. 553-556. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.553 |
0.421 |
|
| 1998 |
Rutsch G, Devaty RP, Langer DW, Rowland LB, Choyke WJ. Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla Materials Science Forum. 517-520. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.517 |
0.308 |
|
| 1998 |
Sridhara SG, Nizhner DG, Devaty RP, Choyke WJ, Dalibor T, Pensl G, Kimoto T. DII Revisited in an Modern Guise - 6H and 4H SiC Materials Science Forum. 493-496. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.493 |
0.483 |
|
| 1998 |
Sridhara SG, Clemen LL, Nizhner DG, Choyke WJ, Devaty RP, Larkin DJ. Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC Materials Science Forum. 465-468. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.465 |
0.39 |
|
| 1998 |
Sridhara SG, Nizhner DG, Devaty RP, Choyke WJ, Troffer T, Pensl G, Larkin DJ, Kong HS. Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC Materials Science Forum. 461-464. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.461 |
0.402 |
|
| 1998 |
Sridhara SG, Devaty RP, Choyke WJ. Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å Journal of Applied Physics. 84: 2963-2964. DOI: 10.1063/1.368403 |
0.483 |
|
| 1998 |
Rutsch G, Devaty RP, Choyke WJ, Langer DW, Rowland LB. Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T Journal of Applied Physics. 84: 2062-2064. DOI: 10.1063/1.368266 |
0.43 |
|
| 1998 |
Sridhara SG, Clemen LL, Devaty RP, Choyke WJ, Larkin DJ, Kong HS, Troffer T, Pensl G. Photoluminescence and transport studies of boron in 4H SiC Journal of Applied Physics. 83: 7909-7919. DOI: 10.1063/1.367970 |
0.445 |
|
| 1997 |
Dalibor T, Pensl G, Kimoto T, Matsunami H, Sridhara S, Devaty RP, Choyke WJ. Radiation-induced defect centers in 4H silicon carbide Diamond and Related Materials. 6: 1333-1337. DOI: 10.1016/S0925-9635(97)00108-8 |
0.443 |
|
| 1997 |
Choyke WJ, Devaty RP. Progress in the study of optical and related properties of SiC since 1992 Diamond and Related Materials. 6: 1243-1248. DOI: 10.1016/S0925-9635(97)00063-0 |
0.445 |
|
| 1996 |
Yoganathan M, Choyke WJ, Devaty RP, Pensl G, Edmond JA. 1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC Mrs Proceedings. 422: 339. DOI: 10.1557/Proc-422-339 |
0.385 |
|
| 1996 |
MacMillan MF, Clemen LL, Devaty RP, Choyke WJ, Khan MA, Kuznia JN, Krishnankutty S. Cathodoluminescence of AlN–GaN short period superlattices Journal of Applied Physics. 80: 2378-2382. DOI: 10.1063/1.363726 |
0.304 |
|
| 1996 |
Yoganathan M, Choyke WJ, Devaty RP, Neudeck PG. Free to bound transition-related electroluminescence in 3C and 6H SiC p + -n junctions at room temperature Journal of Applied Physics. 80: 1763-1767. DOI: 10.1063/1.362974 |
0.401 |
|
| 1996 |
Steckl AJ, Devrajan J, Choyke WJ, Devaty RP, Yoganathan M, Novak SW. Effect of annealing temperature on 1.5 mm photoluminescence from Er-implanted 6H-SiC Journal of Electronic Materials. 25: 869-873. DOI: 10.1007/Bf02666651 |
0.376 |
|
| 1995 |
Kimoto T, Itoh A, Matsunami H, Sridhara S, Clemen LL, Devaty RP, Choyke WJ, Dalibor T, Peppermüller C, Pensl G. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition Applied Physics Letters. 67: 2833-2835. DOI: 10.1063/1.114800 |
0.357 |
|
| 1995 |
Larkin DJ, Sridhara SG, Devaty RP, Choyke WJ. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy Journal of Electronic Materials. 24: 289-294. DOI: 10.1007/Bf02659689 |
0.381 |
|
| 1994 |
Lambrecht WR, Segall B, Yoganathan M, Suttrop W, Devaty RP, Choyke WJ, Edmond JA, Powell JA, Alouani M. Calculated and measured uv reflectivity of SiC polytypes. Physical Review. B, Condensed Matter. 50: 10722-10726. PMID 9975172 DOI: 10.1103/Physrevb.50.10722 |
0.306 |
|
| 1994 |
Yoganathan M, Suttrop W, Devaty RP, Choyke WJ. Identification of {2\overline{1}\overline{1}0} and {10\overline{1}0} Laue patterns of hexagonal and rhombohedral silicon carbide polytypes Journal of Applied Crystallography. 27: 497-503. DOI: 10.1107/S0021889893012439 |
0.387 |
|
| 1994 |
Choyke WJ, Devaty RP, Clemen LL, Yoganathan M, Pensl G, Hässler C. Intense erbium‐1.54‐μm photoluminescence from 2 to 525 K in ion‐implanted 4H, 6H, 15R, and 3C SiC Applied Physics Letters. 65: 1668-1670. DOI: 10.1063/1.112908 |
0.445 |
|
| 1994 |
Schadt M, Pensl G, Devaty RP, Choyke WJ, Stein R, Stephani D. Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide Applied Physics Letters. 65: 3120-3122. DOI: 10.1063/1.112455 |
0.455 |
|
| 1993 |
Lambrecht WRL, Segall B, Suttrop W, Yoganathan M, Devaty RP, Choyke WJ, Edmond JA, Powell JA, Alouani M. Optical reflectivity of 3C and 4H‐SiC polytypes: Theory and experiment Applied Physics Letters. 63: 2747-2749. DOI: 10.1063/1.110322 |
0.343 |
|
| 1993 |
Clemen LL, Devaty RP, MacMillan MF, Yoganathan M, Choyke WJ, Larkin DJ, Powell JA, Edmond JA, Kong HS. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC Applied Physics Letters. 62: 2953-2955. DOI: 10.1063/1.109627 |
0.481 |
|
| 1993 |
Perera AGU, Choe J-, Francombe MH, Sherriff RE, Devaty RP. Far Infrared Detection with a Si p-i Interface and Multilayer Structures Superlattices and Microstructures. 14: 123-123. DOI: 10.1006/Spmi.1993.1112 |
0.309 |
|
| 1991 |
Bradshaw J, Choyke W, Devaty R, Messham R. Photoluminescence from carriers confined at an AlxGa1−xAs/GaAs heterojunction interface Journal of Luminescence. 47: 249-254. DOI: 10.1016/0022-2313(91)90017-P |
0.408 |
|
| 1990 |
Devaty RP, Sievers AJ. Far-infrared absorption by small silver particles in gelatin. Physical Review. B, Condensed Matter. 41: 7421-7439. PMID 9993032 DOI: 10.1103/PhysRevB.41.7421 |
0.423 |
|
| 1990 |
Bradshaw JL, Choyke WJ, Devaty RP, Messham RL. Enhanced carrier diffusion lengths and photon transport in AlxGa1−xAs/GaAs structures Journal of Applied Physics. 67: 1483-1491. DOI: 10.1063/1.345656 |
0.312 |
|
| 1989 |
Spitznagel JA, Wood S, Choyke WJ, Devaty RP, Ruan J. Amorphization and Annealing of 6H SiC Implanted with N-Type, P-Type or Isovalent Dopants Mrs Proceedings. 147: 113. DOI: 10.1557/Proc-147-113 |
0.385 |
|
| 1989 |
Coon DD, Devaty RP, Perera AGU, Sherriff RE. Interfacial work functions and extrinsic silicon infrared photocathodes Applied Physics Letters. 55: 1738-1740. DOI: 10.1063/1.102203 |
0.333 |
|
| 1985 |
Devaty RP, Sievers AJ. Possibility of observing quantum size effects in the electromagnetic absorption spectrum of small metal particles. Physical Review. B, Condensed Matter. 32: 1951-1954. PMID 9937256 DOI: 10.1103/Physrevb.32.1951 |
0.485 |
|
| 1985 |
Devaty RP, Sievers AJ. Mie resonance for spherical metal particles in an anisotropic dielectric. Physical Review. B, Condensed Matter. 31: 2427-2429. PMID 9936055 DOI: 10.1103/PhysRevB.31.2427 |
0.4 |
|
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