| Year |
Citation |
Score |
| 2020 |
Ghadi H, McGlone JF, Jackson CM, Farzana E, Feng Z, Bhuiyan AFMAU, Zhao H, Arehart AR, Ringel SA. Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111. DOI: 10.1063/1.5142313 |
0.377 |
|
| 2019 |
Sun W, Joh J, Krishnan S, Pendharkar S, Jackson CM, Ringel SA, Arehart AR. Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs Ieee Transactions On Electron Devices. 66: 890-895. DOI: 10.1109/Ted.2018.2888840 |
0.372 |
|
| 2019 |
Johnson JM, Chen Z, Varley JB, Jackson CM, Farzana E, Zhang Z, Arehart AR, Huang H, Genc A, Ringel SA, Van de Walle CG, Muller DA, Hwang J. Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
β−Ga2O3 Physical Review X. 9. DOI: 10.1103/Physrevx.9.041027 |
0.333 |
|
| 2018 |
Farzana E, Foronda HM, Jackson CM, Razzak T, Zhang Z, Speck JS, Arehart AR, Ringel SA. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies Journal of Applied Physics. 124: 145703. DOI: 10.1063/1.5050949 |
0.397 |
|
| 2018 |
Altermatt PP, Xiong Z, He Q, Deng W, Ye F, Yang Y, Chen Y, Feng Z, Verlinden PJ, Liu A, Macdonald DH, Luka T, Lausch D, Turek M, Hagendorf C, ... ... Jackson CM, et al. High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells Solar Energy. 175: 68-74. DOI: 10.1016/J.Solener.2018.01.073 |
0.305 |
|
| 2016 |
Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157 |
0.394 |
|
| 2016 |
Sasikumar A, Arehart AR, Cardwell DW, Jackson CM, Sun W, Zhang Z, Ringel SA. Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs Microelectronics Reliability. 56: 37-44. DOI: 10.1016/J.Microrel.2015.10.026 |
0.387 |
|
| 2014 |
Zhang Z, Jackson CM, Arehart AR, McSkimming B, Speck JS, Ringel SA. Direct determination of energy band alignments of Ni/Al2O 3/GaN MOS structures using internal photoemission spectroscopy Journal of Electronic Materials. 43: 828-832. DOI: 10.1007/S11664-013-2942-Z |
0.368 |
|
| 2013 |
Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102 |
0.369 |
|
| 2013 |
Jackson CM, Arehart AR, Cinkilic E, McSkimming B, Speck JS, Ringel SA. Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Journal of Applied Physics. 113. DOI: 10.1063/1.4808093 |
0.439 |
|
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