Shui-Qing Yu

Affiliations: 
Electrical Engineering University of Arkansas, Little Rock, AR 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Nanotechnology
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"Shui-Qing Yu"
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Publications

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Gunder C, Maia de Oliveira F, Wangila E, et al. (2024) The growth of Ge and direct bandgap GeSn on GaAs (001) by molecular beam epitaxy. Rsc Advances. 14: 1250-1257
Abernathy G, Ojo S, Said A, et al. (2023) Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission. Scientific Reports. 13: 18515
Banihashemian SF, Grant JM, Sabbar A, et al. (2020) Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition Optical Materials Express. 10: 2242-2253
Sabbar A, Madhusoodhanan S, Dong B, et al. (2020) High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1
Madhusoodhanan S, Sabbar A, Tran H, et al. (2020) High-Temperature Analysis of GaN-based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1
Sabbar A, Madhusoodhanan S, Al-Kabi S, et al. (2020) Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 845-853
Stanchu HV, Kuchuk AV, Mazur YI, et al. (2020) Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate Applied Physics Letters. 116: 232101
Saha SK, Kumar R, Kuchuk A, et al. (2020) GaAs epitaxial growth on R-plane sapphire substrate Journal of Crystal Growth. 548: 125848
Sabbar A, Grant JM, Grant PC, et al. (2020) Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System Journal of Electronic Materials. 49: 4809-4815
Sabbar A, Madhusoodhanan S, Al-Kabi S, et al. (2019) High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules. Scientific Reports. 9: 16758
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