Shui-Qing Yu - Publications

Affiliations: 
Electrical Engineering University of Arkansas, Little Rock, AR 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Nanotechnology

74 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ. The growth of Ge and direct bandgap GeSn on GaAs (001) by molecular beam epitaxy. Rsc Advances. 14: 1250-1257. PMID 38174282 DOI: 10.1039/d3ra06774b  0.399
2023 Abernathy G, Ojo S, Said A, Grant JM, Zhou Y, Stanchu H, Du W, Li B, Yu SQ. Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission. Scientific Reports. 13: 18515. PMID 37898710 DOI: 10.1038/s41598-023-45916-4  0.319
2020 Banihashemian SF, Grant JM, Sabbar A, Tran H, Olorunsola O, Ojo S, Amoah S, Mehboudi M, Yu S, Mosleh A, Naseem HA. Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition Optical Materials Express. 10: 2242-2253. DOI: 10.1364/Ome.398958  0.373
2020 Sabbar A, Madhusoodhanan S, Dong B, Wang J, Mantooth HA, Yu S, Chen Z. High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1. DOI: 10.1109/Jestpe.2020.2995120  0.37
2020 Madhusoodhanan S, Sabbar A, Tran H, Dong B, Wang J, Mantooth A, Yu S, Chen Z. High-Temperature Analysis of GaN-based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1. DOI: 10.1109/Jestpe.2020.2974788  0.339
2020 Sabbar A, Madhusoodhanan S, Al-Kabi S, Dong B, Wang J, Atcitty S, Kaplar RJ, Ding D, Mantooth HA, Yu S, Chen Z. Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 845-853. DOI: 10.1109/Jestpe.2018.2882775  0.402
2020 Stanchu HV, Kuchuk AV, Mazur YI, Margetis J, Tolle J, Yu S, Salamo GJ. Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate Applied Physics Letters. 116: 232101. DOI: 10.1063/5.0011842  0.382
2020 Saha SK, Kumar R, Kuchuk A, Stanchu H, Mazur YI, Yu S, Salamo GJ. GaAs epitaxial growth on R-plane sapphire substrate Journal of Crystal Growth. 548: 125848. DOI: 10.1016/J.Jcrysgro.2020.125848  0.371
2020 Sabbar A, Grant JM, Grant PC, Dou W, Alharthi B, Li B, Yurtsever F, Ghetmiri SA, Mortazavi M, Naseem HA, Yu S, Mosleh A, Chen Z. Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System Journal of Electronic Materials. 49: 4809-4815. DOI: 10.1007/S11664-020-08169-9  0.379
2019 Sabbar A, Madhusoodhanan S, Al-Kabi S, Dong B, Wang J, Atcitty S, Kaplar R, Ding D, Mantooth A, Yu SQ, Chen Z. High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules. Scientific Reports. 9: 16758. PMID 31728031 DOI: 10.1038/S41598-019-52126-4  0.392
2019 Eales TD, Marko IP, Schulz S, O'Halloran E, Ghetmiri S, Du W, Zhou Y, Yu SQ, Margetis J, Tolle J, O'Reilly EP, Sweeney SJ. GeSn alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Scientific Reports. 9: 14077. PMID 31575881 DOI: 10.1038/S41598-019-50349-Z  0.304
2019 Du W, Thai QM, Chrétien J, Bertrand M, Casiez L, Zhou Y, Margetis J, Pauc N, Chelnokov A, Reboud V, Calvo V, Tolle J, Li B, Yu S. Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures Frontiers in Physics. 7. DOI: 10.3389/Fphy.2019.00147  0.385
2019 Tran H, Littlejohns CG, Thomson DJ, Pham T, Ghetmiri A, Mosleh A, Margetis J, Tolle J, Mashanovich GZ, Du W, Li B, Mortazavi M, Yu S. Study of GeSn Mid-infrared Photodetectors for High Frequency Applications Frontiers in Materials. 6. DOI: 10.3389/Fmats.2019.00278  0.31
2019 Madhusoodhanan S, Sabbar A, Al-Kabi S, Atcitty S, Kaplar R, Dong B, Wang J, Yu S, Chen Z. High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application Advances in Science, Technology and Engineering Systems Journal. 4: 17-22. DOI: 10.25046/Aj040203  0.353
2019 Grant PC, Dou W, Alharthi B, Grant JM, Tran H, Abernathy G, Mosleh A, Du W, Li B, Mortazavi M, Naseem HA, Yu S. UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices Optical Materials Express. 9: 3277-3291. DOI: 10.1364/Ome.9.003277  0.454
2019 Margetis J, Yu S, Li B, Tolle J. Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1−xSnx Journal of Vacuum Science and Technology. 37: 21508. DOI: 10.1116/1.5055620  0.422
2019 Madhusoodhanan S, Sabbar A, Atcitty S, Kaplar R, Mantooth A, Yu S, Chen Z. High-Temperature Analysis of GaN-based Blue LEDs for Future Power Electronic Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1. DOI: 10.1109/Jestpe.2019.2945166  0.405
2019 Tran H, Pham T, Margetis J, Zhou Y, Dou W, Grant PC, Grant JM, Al-Kabi S, Sun G, Soref RA, Tolle J, Zhang Y, Du W, Li B, Mortazavi M, Yu S, et al. Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications Acs Photonics. 6: 2807-2815. DOI: 10.1021/Acsphotonics.9B00845  0.323
2019 Zhou Y, Dou W, Du W, Ojo S, Tran H, Ghetmiri SA, Liu J, Sun G, Soref R, Margetis J, Tolle J, Li B, Chen Z, Mortazavi M, Yu S. Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si Acs Photonics. 6: 1434-1441. DOI: 10.1021/Acsphotonics.9B00030  0.42
2019 Saha SK, Kumar R, Kuchuk A, Alavijeh MZ, Maidaniuk Y, Mazur YI, Yu S, Salamo GJ. Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate Crystal Growth & Design. 19: 5088-5096. DOI: 10.1021/Acs.Cgd.9B00448  0.428
2019 Alharthi B, Dou W, Grant PC, Grant JM, Morgan T, Mosleh A, Du W, Li B, Mortazavi M, Naseem H, Yu S. Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications Applied Surface Science. 481: 246-254. DOI: 10.1016/J.Apsusc.2019.03.062  0.466
2018 Dou W, Zhou Y, Margetis J, Ghetmiri SA, Al-Kabi S, Du W, Liu J, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Yu SQ. Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 22.3. Optics Letters. 43: 4558-4561. PMID 30272682 DOI: 10.1364/Ol.43.004558  0.364
2018 Grant P, Margetis J, Du W, Zhou Y, Dou W, Abernathy G, Kuchuk AV, Li B, Tolle J, Liu J, Sun G, Soref R, Mortazavi M, Yu SF. Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement. Nanotechnology. PMID 30191884 DOI: 10.1088/1361-6528/Aadfaa  0.418
2018 Dou W, Benamara M, Mosleh A, Margetis J, Grant P, Zhou Y, Al-Kabi S, Du W, Tolle J, Li B, Mortazavi M, Yu SQ. Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth. Scientific Reports. 8: 5640. PMID 29618825 DOI: 10.1038/S41598-018-24018-6  0.396
2018 Dou W, Alharthi B, Grant PC, Grant JM, Mosleh A, Tran H, Du W, Mortazavi M, Li B, Naseem H, Yu S. Crystalline GeSn growth by plasma enhanced chemical vapor deposition Optical Materials Express. 8: 3220-3229. DOI: 10.1364/Ome.8.003220  0.426
2018 Margetis J, Zhou Y, Dou W, Grant PC, Alharthi B, Du W, Wadsworth A, Guo Q, Tran H, Ojo S, Abernathy G, Mosleh A, Ghetmiri SA, Thompson GB, Liu J, ... Yu S, et al. All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K Applied Physics Letters. 113: 221104. DOI: 10.1063/1.5052563  0.375
2018 Tran H, Pham T, Du W, Zhang Y, Grant PC, Grant JM, Sun G, Soref RA, Margetis J, Tolle J, Li B, Mortazavi M, Yu S. High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging Journal of Applied Physics. 124: 13101. DOI: 10.1063/1.5020510  0.415
2018 Grant PC, Margetis J, Zhou Y, Dou W, Abernathy G, Kuchuk A, Du W, Li B, Tolle J, Liu J, Sun G, Soref RA, Mortazavi M, Yu S. Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate Aip Advances. 8: 25104. DOI: 10.1063/1.5020035  0.439
2018 Zhang Y, Wu Y, Wang X, Ying L, Kumar R, Yu Z, Fossum ER, Liu J, Salamo GJ, Yu S. Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots Acs Photonics. 5: 2008-2021. DOI: 10.1021/Acsphotonics.7B01515  0.336
2018 Alharthi B, Grant JM, Dou W, Grant PC, Mosleh A, Du W, Mortazavi M, Li B, Naseem H, Yu S. Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement Journal of Electronic Materials. 47: 4561-4570. DOI: 10.1007/S11664-018-6315-5  0.458
2018 Alahmad H, Mosleh A, Alher M, Banihashemian SF, Ghetmiri SA, Al-Kabi S, Du W, Li B, Yu S, Naseem HA. GePb Alloy Growth Using Layer Inversion Method Journal of Electronic Materials. 47: 3733-3740. DOI: 10.1007/S11664-018-6233-6  0.419
2017 Zhang Y, Wu Y, Wang X, Fossum ER, Kumar R, Liu J, Salamo G, Yu SQ. Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling. Optics Express. 25: 26508-26518. PMID 29092140 DOI: 10.1364/Oe.25.026508  0.333
2017 Ghetmiri SA, Zhou Y, Margetis J, Al-Kabi S, Dou W, Mosleh A, Du W, Kuchuk A, Liu J, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Mortazavi M, Yu SQ, et al. Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics. Optics Letters. 42: 387-390. PMID 28146483 DOI: 10.1364/Ol.42.000387  0.43
2017 Alharthi B, Margetis J, Tran H, Al-kabi S, Dou W, Ghetmiri SA, Mosleh A, Tolle J, Du W, Mortazavi M, Li B, Naseem H, Yu S. Study of material and optical properties of Si_xGe_1-x-ySn_y alloys for Si-based optoelectronic device applications Optical Materials Express. 7: 3517. DOI: 10.1364/Ome.7.003517  0.452
2017 Du W, Ghetmiri S, Al-Kabi S, Mosleh A, Pham T, Zhou Y, Tran H, Sun G, Soref R, Margetis J, Tolle J, Li B, Mortazavi M, Naseem H, Yu S. Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications Proceedings of Spie. 10108: 1010813. DOI: 10.1117/12.2253067  0.468
2017 Eales TD, Marko IP, Ghetmiri SA, Du W, Zhou Y, Yu S, Margetis J, Tolle J, Schulz S, O’Halloran E, O'Reilly EP, Sweeney SJ. New experimental evidence for nature of the band gap of GeSn alloys (Conference Presentation) Proceedings of Spie. 10108. DOI: 10.1117/12.2252724  0.314
2017 Grant PC, Dou W, Alharthi B, Grant JM, Mosleh A, Du W, Li B, Mortazavi M, Naseem HA, Yu S. Comparison study of the low temperature growth of dilute GeSn and Ge Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 61204. DOI: 10.1116/1.4990773  0.402
2017 Margetis J, Yu S, Bhargava N, Li B, Du W, Tolle J. Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers Semiconductor Science and Technology. 32: 124006. DOI: 10.1088/1361-6641/Aa7Fc7  0.328
2017 Du W, Ghetmiri SA, Margetis J, Al-Kabi S, Zhou Y, Liu J, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Yu S. Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure Journal of Applied Physics. 122: 123102. DOI: 10.1063/1.4986341  0.43
2017 Margetis J, Al-Kabi S, Du W, Dou W, Zhou Y, Pham T, Grant P, Ghetmiri S, Mosleh A, Li B, Liu J, Sun G, Soref R, Tolle J, Mortazavi M, Yu S, et al. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K Acs Photonics. DOI: 10.1021/Acsphotonics.7B00938  0.44
2017 Margetis J, Mosleh A, Ghetmiri SA, Al-Kabi S, Dou W, Du W, Bhargava N, Yu S, Profijt H, Kohen D, Loo R, Vohra A, Tolle J. Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy Materials Science in Semiconductor Processing. 70: 38-43. DOI: 10.1016/J.Mssp.2016.12.024  0.384
2016 Pham T, Du W, Tran H, Margetis J, Tolle J, Sun G, Soref RA, Naseem HA, Li B, Yu SQ. Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection. Optics Express. 24: 4519-4531. PMID 29092279 DOI: 10.1364/Oe.24.004519  0.422
2016 Steele JA, Lewis RA, Horvat J, Nancarrow MJ, Henini M, Fan D, Mazur YI, Schmidbauer M, Ware ME, Yu SQ, Salamo GJ. Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi. Scientific Reports. 6: 28860. PMID 27377213 DOI: 10.1038/Srep28860  0.476
2016 Mosleh A, Alher M, Du W, Cousar LC, Ghetmiri SA, Al-Kabi S, Dou W, Grant PC, Sun G, Soref RA, Li B, Naseem HA, Yu SQ. SiyGe1-x-ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4936892  0.424
2016 Al-Kabi S, Ghetmiri SA, Margetis J, Pham T, Zhou Y, Dou W, Collier B, Quinde R, Du W, Mosleh A, Liu J, Sun G, Soref RA, Tolle J, Li B, ... Yu S, et al. An optically pumped 2.5 μm GeSn laser on Si operating at 110 K Applied Physics Letters. 109: 171105. DOI: 10.1063/1.4966141  0.396
2016 Zhou Y, Dou W, Du W, Pham T, Ghetmiri SA, Al-Kabi S, Mosleh A, Alher M, Margetis J, Tolle J, Sun G, Soref R, Li B, Mortazavi M, Naseem H, Yu SQ, et al. Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Journal of Applied Physics. 120. DOI: 10.1063/1.4958337  0.445
2016 Tran H, Du W, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Margetis J, Tolle J, Li B, Naseem HA, Yu SQ. Systematic study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics Journal of Applied Physics. 119. DOI: 10.1063/1.4943652  0.34
2016 Dou W, Ghetmiri SA, Al-Kabi S, Mosleh A, Zhou Y, Alharthi B, du W, Margetis J, Tolle J, Kuchuk A, Benamara M, Li B, Naseem HA, Mortazavi M, Yu SQ. Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications Journal of Electronic Materials. 1-8. DOI: 10.1007/S11664-016-5031-2  0.485
2016 Al-Kabi S, Ghetmiri SA, Margetis J, du W, Mosleh A, Dou W, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Naseem HA, Yu SQ. Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-5028-X  0.433
2016 Mosleh A, Alher M, Cousar LC, du W, Ghetmiri SA, Al-Kabi S, Dou W, Grant PC, Sun G, Soref RA, Li B, Naseem HA, Yu SQ. Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing Journal of Electronic Materials. 1-8. DOI: 10.1007/S11664-016-4402-Z  0.404
2015 Steele JA, Horvat J, Lewis RA, Henini M, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale. PMID 26584058 DOI: 10.1039/C5Nr06676J  0.437
2015 Mosleh A, Alher MA, Cousar LC, Du W, Ghetmiri SA, Pham T, Grant JM, Sun G, Soref RA, Li B, Naseem HA, Yu S. Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System Frontiers in Materials. 2. DOI: 10.3389/Fmats.2015.00030  0.429
2015 Du W, Pham T, Margetis J, Tran H, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Yu SQ. Si based mid-infrared GeSn photo detectors and light emitters Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2187540  0.407
2015 Pham T, Du W, Margetis J, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Yu SQ. Temperature-dependent study of Si-based GeSn photoconductors Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2079580  0.372
2015 Al-Kabi S, Ghetmiri SA, Margetis J, du W, Mosleh A, Alher M, Dou W, Grant JM, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Naseem HA, Yu SQ. Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12% Journal of Electronic Materials. 1-9. DOI: 10.1007/S11664-015-4283-6  0.41
2014 Conley BR, Mosleh A, Ghetmiri SA, Du W, Soref RA, Sun G, Margetis J, Tolle J, Naseem HA, Yu SQ. Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection. Optics Express. 22: 15639-52. PMID 24977823 DOI: 10.1364/Oe.22.015639  0.427
2014 Steele JA, Lewis RA, Henini M, Lemine OM, Fan D, Mazur YI, Dorogan VG, Grant PC, Yu SQ, Salamo GJ. Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express. 22: 11680-9. PMID 24921290 DOI: 10.1364/Oe.22.011680  0.443
2014 Mazur YI, Dorogan VG, de Souza LD, Fan D, Benamara M, Schmidbauer M, Ware ME, Tarasov GG, Yu SQ, Marques GE, Salamo GJ. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology. 25: 035702. PMID 24346504 DOI: 10.1088/0957-4484/25/3/035702  0.513
2014 Ghetmiri SA, Du W, Conley BR, Mosleh A, Nazzal A, Sun G, Soref RA, Margetis J, Tolle J, Naseem HA, Yu SQ. Shortwave-infrared photoluminescence from Ge1-xSnx thin films on silicon Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4897917  0.422
2014 Grant PC, Fan D, Mosleh A, Yu SQ, Dorogan VG, Hawkridge ME, Mazur YI, Benamara M, Salamo GJ, Johnson SR. Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4868110  0.584
2014 Khorrami MA, El-Ghazaly S, Naseem H, Yu SQ. Global modeling of active terahertz plasmonic devices Ieee Transactions On Terahertz Science and Technology. 4: 101-109. DOI: 10.1109/Tthz.2013.2281146  0.307
2014 Conley BR, Margetis J, Du W, Tran H, Mosleh A, Ghetmiri SA, Tolle J, Sun G, Soref R, Li B, Naseem HA, Yu SQ. Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μ m long-wavelength cutoff Applied Physics Letters. 105. DOI: 10.1063/1.4903540  0.378
2014 Ghetmiri SA, Du W, Margetis J, Mosleh A, Cousar L, Conley BR, Domulevicz L, Nazzal A, Sun G, Soref RA, Tolle J, Li B, Naseem HA, Yu SQ. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4898597  0.468
2014 Du W, Ghetmiri SA, Conley BR, Mosleh A, Nazzal A, Soref RA, Sun G, Tolle J, Margetis J, Naseem HA, Yu SQ. Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx Applied Physics Letters. 105. DOI: 10.1063/1.4892302  0.402
2014 Du W, Zhou Y, Ghetmiri SA, Mosleh A, Conley BR, Nazzal A, Soref RA, Sun G, Tolle J, Margetis J, Naseem HA, Yu SQ. Room-temperature electroluminescence from Ge/Ge1-xSn x/Ge diodes on Si substrates Applied Physics Letters. 104. DOI: 10.1063/1.4884380  0.438
2014 Mosleh A, Ghetmiri SA, Conley BR, Hawkridge M, Benamara M, Nazzal A, Tolle J, Yu SQ, Naseem HA. Material characterization of Ge1-x Sn x alloys grown by a commercial CVD system for optoelectronic device applications Journal of Electronic Materials. 43: 938-946. DOI: 10.1007/S11664-014-3089-2  0.443
2013 Fan D, Grant PC, Yu SQ, Dorogan VG, Hu X, Zeng Z, Li C, Hawkridge ME, Benamara M, Mazur YI, Salamo GJ, Johnson SR, Wang ZM. MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792518  0.567
2013 Zeng Z, Morgan TA, Fan D, Li C, Hirono Y, Hu X, Zhao Y, Lee JS, Wang J, Wang ZM, Yu S, Hawkridge ME, Benamara M, Salamo GJ. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction Aip Advances. 3. DOI: 10.1063/1.4815972  0.552
2013 Fan D, Zeng Z, Dorogan VG, Hirono Y, Li C, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 24: 1635-1639. DOI: 10.1007/S10854-012-0987-Z  0.538
2012 Fan D, Zeng Z, Hu X, Dorogan VG, Li C, Benamara M, Hawkridge ME, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4764556  0.58
2012 Khorrami MA, El-Ghazaly S, Yu S, Naseem H. Terahertz plasmon amplification using two-dimensional electron-gas layers Journal of Applied Physics. 111: 94501. DOI: 10.1063/1.4709389  0.302
2010 Li Z, Wu J, Wang ZM, Fan D, Guo A, Li S, Yu SQ, Manasreh O, Salamo GJ. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications. Nanoscale Research Letters. 5: 1079-84. PMID 20672090 DOI: 10.1007/S11671-010-9605-2  0.575
2010 Hossain N, Hild K, Jin S, Sweeney SJ, Yu SQ, Johnson SR, Ding D, Zhang YH. Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 59-60. DOI: 10.1109/Photonics.2010.5698756  0.414
2007 Hild K, Sweeney SJ, Marko IP, Jin SR, Johnson SR, Chaparro SA, Yu S, Zhang YH. Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers Physica Status Solidi (B) Basic Research. 244: 197-202. DOI: 10.1002/Pssb.200672571  0.383
Show low-probability matches.