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Shaibal Mukherjee, Ph.D. - Publications

Affiliations: 
2009 School of Electrical and Computer Engineering University of Oklahoma, Norman, OK, United States 
Area:
Electronics and Electrical Engineering
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78 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Jadhav RG, Kumar A, Kumar S, Maiti S, Mukherjee S, Das AK. Benzoselenadiazole-Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices. Chempluschem. 85: 910-920. PMID 32401425 DOI: 10.1002/Cplu.202000229  0.322
2020 Das M, Kumar A, Kumar S, Mandal B, Siddharth G, Kumar P, Htay MT, Mukherjee S. Impact of Interfacial SiO 2 on Dual Ion Beam Sputtered Y 2 O 3 -Based Memristive System Ieee Transactions On Nanotechnology. 19: 332-337. DOI: 10.1109/Tnano.2020.2987200  0.365
2020 Khan A, Kumar P, Das M, Htay MT, Agarwal A, Mukherjee S. Drain Current Optimization in DIBS-Grown MgZnO/CdZnO HFET Ieee Transactions On Electron Devices. 67: 2276-2281. DOI: 10.1109/Ted.2020.2989731  0.38
2020 Siddharth G, Sengar BS, Garg V, Khan A, Singh R, Mukherjee S. Analytical Performance Analysis of CdZnO/ZnO-Based Multiple Quantum Well Solar Cell Ieee Transactions On Electron Devices. 67: 1047-1051. DOI: 10.1109/Ted.2020.2965020  0.394
2020 Bhardwaj R, Singh R, Khan MA, Mukherjee S. Performance Analysis of p-LPZO/n-GZO and p-SZO/n-GZO Homojunction UV Photodetectors Superlattices and Microstructures. 140: 106451. DOI: 10.1016/J.Spmi.2020.106451  0.363
2019 Khan A, Kumar P, Siddharth G, Das M, Mukherjee S. Analysis of Drain Current in Polycrystalline MgZnO/ZnO and MgZnO/CdZnO HFET Ieee Transactions On Electron Devices. 66: 5097-5102. DOI: 10.1109/Ted.2019.2947422  0.303
2019 Siddharth G, Garg V, Sengar BS, Bhardwaj R, Kumar P, Mukherjee S. Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar Cell Ieee Transactions On Electron Devices. 66: 3399-3404. DOI: 10.1109/Ted.2019.2920934  0.318
2019 Aaryashree, Mandal B, Bhardwaj R, Maiti S, Sharma DS, Das AK, Mukherjee S. Functionalized Oligo( $p$ -Phenylenevinylene) and ZnO-Based Nanohybrid for Selective Ammonia Sensing at Room Temperature Ieee Sensors Journal. 19: 2847-2854. DOI: 10.1109/Jsen.2018.2890092  0.314
2019 Garg V, Sengar BS, Kumar A, Siddharth G, Kumar S, Mukherjee S. Investigation of valence plasmon excitations in GMZO thin film and their suitability for plasmon-enhanced buffer-less solar cells Solar Energy. 178: 114-124. DOI: 10.1016/J.Solener.2018.12.017  0.408
2019 Garg V, Sengar BS, Awasthi V, Kumar A, Pandey SK, Kumar S, Gupta M, Mukherjee S. Investigation of valence electron excitation and plasmonic enhancement in sputter grown NMZO thin films: For energy harvesting applications Optical Materials. 88: 372-377. DOI: 10.1016/J.Optmat.2018.12.002  0.413
2019 Mandal B, Aaryashree, Das M, Htay MT, Mukherjee S. Architecture tailoring of MoO3 nanostructures for superior ethanol sensing performance Materials Research Bulletin. 109: 281-290. DOI: 10.1016/J.Materresbull.2018.09.041  0.32
2019 Mukherjee S. Thin film deposition from dual ion beam sputtering system Csi Transactions On Ict. 7: 99-104. DOI: 10.1007/S40012-019-00253-8  0.415
2018 Garg V, Sengar BS, Awasthi V, Kumar A, Singh R, Kumar S, Mukherjee C, Atuchin VV, Mukherjee S. Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: A case study of GZO. Acs Applied Materials & Interfaces. PMID 29356500 DOI: 10.1021/Acsami.7B15103  0.379
2018 Singh R, Khan MA, Mukherjee S, Kranti A. Role of Surface States and Interface Charges in 2DEG in Sputtered ZnO Heterostructures Ieee Transactions On Electron Devices. 65: 2850-2854. DOI: 10.1109/Ted.2018.2838546  0.312
2018 Das M, Kumar A, Kumar S, Mandal B, Khan A, Mukherjee S. Effect of Surface Variations on the Performance of Yttria Based Memristive System Ieee Electron Device Letters. 39: 1852-1855. DOI: 10.1109/Led.2018.2878953  0.384
2018 Khan A, Singh R, Bhardwaj R, Kumar A, Das AK, Misra P, Kranti A, Mukherjee S. Enhanced Sheet Charge Density in DIBS Grown CdO Alloyed ZnO Buffer Based Heterostructure Ieee Electron Device Letters. 39: 827-830. DOI: 10.1109/Led.2018.2829761  0.375
2018 Mandal B, Aaryashree, Singh R, Mukherjee S. Highly Selective and Sensitive Methanol Sensor Using Rose-Like ZnO Microcube and MoO 3 Micrograss-Based Composite Ieee Sensors Journal. 18: 2659-2666. DOI: 10.1109/Jsen.2018.2803682  0.318
2018 Bhardwaj R, Sharma P, Singh R, Gupta M, Mukherjee S. High Responsivity Mg x Zn 1– x O Based Ultraviolet Photodetector Fabricated by Dual Ion Beam Sputtering Ieee Sensors Journal. 18: 2744-2750. DOI: 10.1109/Jsen.2018.2803678  0.343
2018 Kumar A, Mukherjee S, Kranti A. Effects of bulk-defects and metal/bulk interface anomalies in a forming-free double-barrier memristor Journal of Physics D. 51: 405601. DOI: 10.1088/1361-6463/Aad96B  0.304
2018 Das M, Kumar A, Mandal B, Htay MT, Mukherjee S. Impact of Schottky junctions in the transformation of switching modes in amorphous Y2O3-based memristive system Journal of Physics D. 51: 315102. DOI: 10.1088/1361-6463/Aacf14  0.329
2018 Sengar BS, Garg V, Kumar A, Kumar S, Mukherjee S. Surface layer investigation of dual ion beam sputtered Cu2ZnSn(S,Se)4 thin film for open circuit voltage improvement Journal of Physics D. 51. DOI: 10.1088/1361-6463/Aacf13  0.368
2018 Singh R, Khan A, Sharma P, Htay MT, Kranti A, Mukherjee S. Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering Journal of Physics D. 51. DOI: 10.1088/1361-6463/Aab183  0.36
2018 Sharma P, Bhardwaj R, Kumar A, Mukherjee S. Trap assisted charge multiplication enhanced photoresponse of Li-P codoped p-ZnO/n-Si heterojunction ultraviolet photodetectors Journal of Physics D. 51: 15103. DOI: 10.1088/1361-6463/Aa98Fb  0.363
2018 Garg V, Sengar BS, Sharma P, Kumar A, Aaryashree, Kumar S, Mukherjee S. Sputter-instigated plasmon-enhanced optical backscattering layer in ultrathin solar cells: Application of GZO in CIGSe material system Solar Energy. 174: 35-44. DOI: 10.1016/J.Solener.2018.08.074  0.405
2018 Sengar BS, Garg V, Kumar A, Awasthi V, Kumar S, Atuchin VV, Mukherjee S. Band alignment of Cd-free (Zn, Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties Optical Materials. 84: 748-756. DOI: 10.1016/J.Optmat.2018.08.017  0.333
2017 Singh R, Khan A, Mukherjee S, Kranti A. Analytical Model for 2DEG Density in Graded MgZnO/ZnO Heterostructures With Cap Layer Ieee Transactions On Electron Devices. 64: 3661-3667. DOI: 10.1109/Ted.2017.2721437  0.308
2017 Khan A, Singh R, Mukherjee S, Kranti A. Buffer Layer Engineering for High ( $\geq 10^{\mathrm {13}}$ cm $^{\mathrm {-2}}$ ) 2-DEG Density in ZnO-Based Heterostructures Ieee Transactions On Electron Devices. 64: 1015-1019. DOI: 10.1109/Ted.2016.2647258  0.34
2017 Bhardwaj R, Sharma P, Singh R, Mukherjee S. Sb-Doped p -MgZnO/ n -Si Heterojunction UV Photodetector Fabricated by Dual Ion Beam Sputtering Ieee Photonics Technology Letters. 29: 1215-1218. DOI: 10.1109/Lpt.2017.2713701  0.366
2017 Sharma P, Bhardwaj R, Singh R, Kumar S, Mukherjee S. Investigation of formation mechanism of Li-P dual-acceptor doped p-type ZnO Applied Physics Letters. 111: 91604. DOI: 10.1063/1.5001071  0.39
2017 Kumar A, Das M, Garg V, Sengar BS, Htay MT, Kumar S, Kranti A, Mukherjee S. Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering Applied Physics Letters. 110: 253509. DOI: 10.1063/1.4989802  0.351
2017 Sharma P, Aaryashree, Garg V, Mukherjee S. Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering Journal of Applied Physics. 121: 225306. DOI: 10.1063/1.4985246  0.409
2017 Awasthi V, Garg V, Sengar BS, Pandey SKK, Aaryashree, Kumar S, Mukherjee C, Mukherjee S. Impact of sputter-instigated plasmonic features in TCO films: for ultrathin photovoltaic applications Applied Physics Letters. 110: 103903. DOI: 10.1063/1.4978269  0.407
2017 Aaryashree, Sharma P, Mandal B, Biswas A, Manna MK, Maiti S, Das AK, Mukherjee S. Synergetic Accrual of Lamellar Nanohybrids for Band-Selective Photodetection Journal of Physical Chemistry C. 121: 14037-14044. DOI: 10.1021/Acs.Jpcc.7B04219  0.357
2016 Manna MK, Aaryashree, Verma S, Mukherjee S, Das AK. Lamellar Peptide-Cadmium-Doped Zinc Oxide Nanohybrids That Emit White Light. Chempluschem. 81: 329-337. PMID 31968787 DOI: 10.1002/Cplu.201500402  0.326
2016 Awasthi V, Pandey SK, Garg V, Sengar BS, Sharma P, Kumar S, Mukherjee C, Mukherjee S. Plasmon generation in sputtered Ga-doped MgZnO thin films for solar cell applications Journal of Applied Physics. 119. DOI: 10.1063/1.4953877  0.408
2016 Sengar BS, Garg V, Awasthi V, Aaryashree, Kumar S, Mukherjee C, Gupta M, Mukherjee S. Growth and characterization of dual ion beam sputtered Cu2ZnSn(S, Se)4 thin films for cost-effective photovoltaic application Solar Energy. 139: 1-12. DOI: 10.1016/J.Solener.2016.09.016  0.401
2016 Awasthi V, Pandey SK, Verma S, Mukherjee S. Room temperature blue LED based on p-ZnO/(CdZnO/ZnO) MQWs/ n-ZnO Journal of Luminescence. 180: 204-208. DOI: 10.1016/J.Jlumin.2016.07.010  0.435
2016 Pandey SK, Mukherjee S. Bias-dependent photo-detection of dual-ion beam sputtered MgZnO thin films Bulletin of Materials Science. 39: 307-313. DOI: 10.1007/S12034-015-1131-5  0.424
2015 Pandey SK, Awasthi V, Sengar BS, Garg V, Sharma P, Kumar S, Mukherjee C, Mukherjee S. Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications Journal of Applied Physics. 118. DOI: 10.1063/1.4934560  0.394
2015 Sharma P, Singh R, Awasthi V, Pandey SK, Garg V, Mukherjee S. Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector Rsc Advances. 5: 85523-85529. DOI: 10.1039/C5Ra13921J  0.384
2015 Verma S, Pandey SKK, Pandey SK, Mukherjee S. Theoretical simulation of Hybrid II-O/III-N green light-emitting diode with MgZnO/InGaN/MgZnO heterojunction Materials Science in Semiconductor Processing. 31: 340-350. DOI: 10.1016/J.Mssp.2014.12.016  0.362
2015 Pandey SKK, Awasthi V, Verma S, Gupta M, Mukherjee S. Spetroscopic ellipsometry study on electrical and elemental properties of Sb-doped ZnO thin films Current Applied Physics. 15: 479-485. DOI: 10.1016/J.Cap.2015.02.008  0.405
2014 Pandey SK, Awasthi V, Verma S, Mukherjee S. Blue electroluminescence from Sb-ZnO/Cd-ZnO/Ga-ZnO heterojunction diode fabricated by dual ion beam sputtering. Optics Express. 22: 30983-91. PMID 25607047 DOI: 10.1364/Oe.22.030983  0.404
2014 Awasthi V, Pandey SK, Sharma P, Kumar S, Mukherjee C, Mukherjee S. Characterizations of DIBS sputtered ga-doped MgZnO thin films for solar cell application Photonics. DOI: 10.1364/Photonics.2014.T3A.76  0.395
2014 Pandey SK, Pandey SK, Awasthi V, Mukherjee S. Design and growth optimization by dual ion beam sputtered zno-based high-efficiency multiple quantum well green light emitting diode Nanoscience and Nanotechnology Letters. 6: 146-152. DOI: 10.1166/Nnl.2014.1712  0.346
2014 Verma S, Manna MK, Pandey SKK, Das AK, Mukherjee S. Benzo[ghi]perylene monoimide based photosensitive lamellar Cd-doped ZnO nanohybrids Rsc Advances. 4: 62603-62614. DOI: 10.1039/C4Ra13712D  0.38
2014 Pandey SK, Pandey SK, Awasthi V, Kumar A, Deshpande UP, Gupta M, Mukherjee S. Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering Bulletin of Materials Science. 37: 983-989. DOI: 10.1007/S12034-014-0035-0  0.43
2014 Awasthi V, Pandey SK, Pandey SK, Verma S, Gupta M, Mukherjee S. Growth and characterizations of dual ion beam sputtered CIGS thin films for photovoltaic applications Journal of Materials Science: Materials in Electronics. 25: 3069-3076. DOI: 10.1007/S10854-014-1985-0  0.421
2014 Pandey SK, Pandey SK, Awasthi V, Kumar A, Gupta M, Sathe V, Mukherjee S. Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure Journal of Materials Science: Materials in Electronics. 25: 772-777. DOI: 10.1007/S10854-013-1644-X  0.38
2014 Verma S, Pandey SK, Gupta M, Mukherjee S. Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films Journal of Materials Science. 49: 6917-6929. DOI: 10.1007/S10853-014-8396-8  0.423
2013 Schug J, McKenna LB, Walton G, Hand N, Mukherjee S, Essuman K, Shi Z, Gao Y, Markley K, Nakagawa M, Kameswaran V, Vourekas A, Friedman JR, Kaestner KH, Greenbaum LE. Dynamic recruitment of microRNAs to their mRNA targets in the regenerating liver. Bmc Genomics. 14: 264. PMID 23597149 DOI: 10.1186/1471-2164-14-264  0.357
2013 Pandey SK, Pandey SK, Deshpande UP, Awasthi V, Kumar A, Gupta M, Mukherjee S. Effect of oxygen partial pressure on the behavior of dual ion beam sputtered ZnO thin films Semiconductor Science and Technology. 28: 85014. DOI: 10.1088/0268-1242/28/8/085014  0.416
2013 Pandey SKK, Pandey SK, Awasthi V, Kumar A, Deshpande UP, Gupta M, Mukherjee S. P-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient Journal of Applied Physics. 114: 163107. DOI: 10.1063/1.4827379  0.418
2013 Pandey SK, Pandey SK, Awasthi V, Gupta M, Deshpande UP, Mukherjee S. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films Applied Physics Letters. 103: 72109. DOI: 10.1063/1.4818819  0.397
2013 Pandey SK, Pandey SKK, Verma S, Gupta M, Sathe V, Mukherjee S. Investigation of dual ion beam sputtered transparent conductive Ga-doped ZnO films Journal of Materials Science: Materials in Electronics. 24: 4919-4924. DOI: 10.1007/S10854-013-1498-2  0.43
2013 Pandey SK, Mukherjee C, Mishra P, Gupta M, Barman SR, D'Souza SW, Mukherjee S. Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films Journal of Materials Science: Materials in Electronics. 24: 2541-2547. DOI: 10.1007/S10854-013-1130-5  0.431
2011 Mukherjee S, Li D, Bi G, Ma J, Elizondo SL, Gautam A, Shi Z. CaF2 surface passivation of lead selenide grown on BaF2 Microelectronic Engineering. 88: 314-317. DOI: 10.1016/J.Mee.2010.11.035  0.539
2010 Gautam A, Mukherjee S, Ram S. Controlled novel route to synthesis and characterization of silver nanorods. Journal of Nanoscience and Nanotechnology. 10: 4329-34. PMID 21128420 DOI: 10.1166/Jnn.2010.2188  0.324
2009 Mukherjee S, Shi Z. State-of-the-art IV-VI Semiconductor Light-Emitting Devices in Mid-Infrared Opto-Electronic Applications Iete Technical Review. 26: 236-246. DOI: 10.4103/0256-4602.52993  0.529
2009 Bi G, Zhao F, Ma J, Mukherjee S, Li D, Shi Z. Modeling of the Potential Profile for the Annealed Polycrystalline PbSe Film Piers Online. 5: 61-64. DOI: 10.2529/Piers080906125457  0.531
2009 Kar JP, Bose G, Tuli S, Myoung JM, Mukherjee S. Morphological investigation of aluminium nitride films on various substrates for MEMS applications Surface Engineering. 25: 526-530. DOI: 10.1179/174329408X326407  0.405
2009 Kar JP, Mukherjee S, Bose G, Tuli S, Myoung JM. Impact of post-deposition annealing on surface, bulk and interface properties of RF sputtered AlN films Materials Science and Technology. 25: 1023-1027. DOI: 10.1179/174328408X287727  0.408
2009 Li D, Ma J, Mukherjee S, Bi G, Zhao F, Elizondo SL, Shi Z. A new in-situ surface treatment during MBE-grown PbSe on CaF2/Si(111) heterostructure Journal of Crystal Growth. 311: 3395-3398. DOI: 10.1016/J.Jcrysgro.2009.04.033  0.58
2009 Kar JP, Bose G, Tuli S, Dangwal A, Mukherjee S. Growth of AlN Films and Its Process Development for the Fabrication of Acoustic Devices and Micromachined Structures Journal of Materials Engineering and Performance. 18: 1046-1051. DOI: 10.1007/S11665-008-9350-1  0.401
2009 Zhao F, Ma J, Li D, Mukherjee S, Bi G, Shi Z. Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films Journal of Electronic Materials. 38: 1661-1665. DOI: 10.1007/S11664-009-0824-1  0.579
2009 Li D, Mukherjee S, Ma J, Bi G, Ray D, Zhao F, Elizondo SL, Yu G, Shi Z. Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate Journal of Electronic Materials. 38: 1952-1955. DOI: 10.1007/S11664-009-0796-1  0.653
2009 Ma J, Li D, Bi G, Zhao F, Elizondo S, Mukherjee S, Shi Z. Nature of Growth Pits in Lead Salt Epilayers Grown by Molecular Beam Epitaxy Journal of Electronic Materials. 38: 325-329. DOI: 10.1007/S11664-008-0566-5  0.54
2008 Mukherjee S, Li D, Ray D, Zhao F, Elizondo SL, Jain S, Ma J, Shi Z. Fabrication of an Electrically Pumped Lead-Chalcogenide Midinfrared Laser on a [110] Oriented PbSnSe Substrate Ieee Photonics Technology Letters. 20: 629-631. DOI: 10.1109/Lpt.2008.918918  0.665
2008 Zhao F, Mukherjee S, Ma J, Li D, Elizondo SL, Shi Z. Influence of oxygen passivation on optical properties of PbSe thin films Applied Physics Letters. 92: 211110. DOI: 10.1063/1.2938417  0.431
2008 Mukherjee S, Jain S, Zhao F, Kar JP, Li D, Shi Z. Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe-PbSrSe MQW structure Microelectronic Engineering. 85: 665-669. DOI: 10.1016/J.Mee.2007.12.018  0.57
2008 Wang XJ, Fulk C, Zhao FH, Li DH, Mukherjee S, Chang Y, Sporken R, Klie R, Shi Z, Grein CH, Sivananthan S. Characterization of PbSnSe/CdTe/Si (211) epilayers grown by molecular beam epitaxy Journal of Electronic Materials. 37: 1200-1204. DOI: 10.1007/S11664-008-0480-X  0.43
2008 Elizondo SL, Zhao F, Kar J, Ma J, Smart J, Li D, Mukherjee S, Shi Z. Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT Journal of Electronic Materials. 37: 1411-1414. DOI: 10.1007/S11664-008-0418-3  0.513
2008 Kar JP, Mukherjee S, Bose G, Tuli S. Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films Journal of Materials Science: Materials in Electronics. 19: 261-265. DOI: 10.1007/S10854-007-9280-Y  0.358
2008 Mukherjee S, Jain S, Zhao F, Kar JP, Li D, Shi Z. Strain oriented microstructural change during the fabrication of free-standing PbSe micro-rods Journal of Materials Science: Materials in Electronics. 19: 237-240. DOI: 10.1007/S10854-007-9261-1  0.551
2007 Elizondo LA, Li Y, Sow A, Kamana R, Wu HZ, Mukherjee S, Zhao F, Shi Z, McCann PJ. Optically pumped mid-infrared light emitter on silicon Journal of Applied Physics. 101. DOI: 10.1063/1.2729467  0.562
2007 Jain S, Mukherjee S, Guan ZP, Ray D, Zhao F, Li D, Shi Z. Fabrication of free-standing PbSe micro-rods Physica E-Low-Dimensional Systems & Nanostructures. 39: 120-123. DOI: 10.1016/J.Physe.2007.02.005  0.627
2007 Mukherjee S, Jain S, Zhao F, Kar JP, Shi Z. Photoluminescence studies from micropillars fabricated on IV-VI multiple quantum-well semiconductor structure Microelectronics Journal. 38: 1181-1184. DOI: 10.1016/J.Mejo.2007.09.003  0.569
2006 Majumdar A, Guan ZP, Zhao F, Li D, Ray D, Jain S, Mukherjee S, Shi Z. Fabrication of freestanding semiconductor multiquantum-well microtubes Applied Physics Letters. 88: 171111. DOI: 10.1063/1.2195900  0.664
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