Christopher L. Hinkle, Ph.D.
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
ultra-thin Si oxyitride devicesGoogle:
"Christopher Hinkle"Mean distance: 10.05 | S | N | B | C | P |
Parents
Sign in to add mentor| Gerald Lucovsky | grad student | 2005 | NCSU | |
| (Fixed charge reduction and tunneling in stacked gate dielectrics.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Barton A, Walsh LA, Smyth CM, et al. (2019) Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator BiSe. Acs Applied Materials & Interfaces |
| Smyth CM, Addou R, Hinkle CL, et al. (2019) Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment The Journal of Physical Chemistry C. 123: 23919-23930 |
| Zhou G, Addou R, Wang Q, et al. (2018) High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth. Advanced Materials (Deerfield Beach, Fla.). e1803109 |
| Walsh LA, Green AJ, Addou R, et al. (2018) Fermi Level Manipulation Through Native Doping in the Topological Insulator BiSe. Acs Nano |
| Chapman RA, Rodriguez-Davila RA, Vandenberghe WG, et al. (2018) Quantum Confinement and Interface States in ZnO Nanocrystalline Thin-Film Transistors Ieee Transactions On Electron Devices. 65: 1787-1795 |
| Bolshakov P, Khosravi A, Zhao P, et al. (2018) Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics Applied Physics Letters. 112: 253502 |
| Khosravi A, Addou R, Smyth CM, et al. (2018) Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2 Apl Materials. 6: 026603 |
| Dong H, Gong C, Addou R, et al. (2017) Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy. Acs Applied Materials & Interfaces |
| Zhao P, Azcatl A, Gomeniuk YY, et al. (2017) Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy. Acs Applied Materials & Interfaces |
| Zhao P, Azcatl A, Bolshakov P, et al. (2017) Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 01A118 |