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Mark T. Winkler, Ph.D. - Publications

Affiliations: 
2010 Harvard University, Cambridge, MA, United States 
Area:
Ultrafast Physics, Materials Science and Chemistry
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Lee YS, Gershon T, Todorov TK, Wang W, Winkler MT, Hopstaken M, Gunawan O, Kim J. Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu2ZnSn(S,Se)4Thin-Film Solar Cells Advanced Energy Materials. 6: 1600198. DOI: 10.1002/Aenm.201600198  0.311
2015 Siah SC, Winkler MT, Powell DM, Johnston SW, Kanevce A, Levi DH, Buonassisi T. Proof-of-concept framework to separate recombination processes in thin silicon wafers using transient free-carrier absorption spectroscopy Journal of Applied Physics. 117. DOI: 10.1063/1.4914160  0.461
2014 Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sullivan JT, Recht D, Winkler MT, Williams JS, Warrender JM, Persans PD, Aziz MJ, Buonassisi T. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nature Communications. 5: 3011. PMID 24385050 DOI: 10.1038/Ncomms4011  0.462
2014 Sher MJ, Simmons CB, Krich JJ, Akey AJ, Winkler MT, Recht D, Buonassisi T, Aziz MJ, Lindenberg AM. Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon Applied Physics Letters. 105. DOI: 10.1063/1.4892357  0.613
2014 Winkler MT, Wang W, Gunawan O, Hovel HJ, Todorov TK, Mitzi DB. Optical designs that improve the efficiency of Cu2ZnSn(S,Se) 4 solar cells Energy and Environmental Science. 7: 1029-1036. DOI: 10.1039/C3Ee42541J  0.321
2013 Haberfehlner G, Smith MJ, Idrobo JC, Auvert G, Sher MJ, Winkler MT, Mazur E, Gambacorti N, Grade?ak S, Bleuet P. Selenium segregation in femtosecond-laser hyperdoped silicon revealed by electron tomography. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 19: 716-25. PMID 23570747 DOI: 10.1017/S1431927613000342  0.712
2013 Siah SC, Simmons CB, Hofstetter J, Winkler MT, Buonassisi T. Decoupling surface- and bulk-limited lifetimes in 100-μm thin silicon using transient absorption pump-probe spectroscopy Conference Record of the Ieee Photovoltaic Specialists Conference. 1450-1453. DOI: 10.1109/PVSC.2013.6744417  0.374
2013 Winkler MT, Cox CR, Nocera DG, Buonassisi T. Modeling integrated photovoltaic-electrochemical devices using steady-state equivalent circuits Proceedings of the National Academy of Sciences of the United States of America. 110: E1076-E1082. DOI: 10.1073/Pnas.1301532110  0.334
2013 Newman BK, Ertekin E, Sullivan JT, Winkler MT, Marcus MA, Fakra SC, Sher MJ, Mazur E, Grossman JC, Buonassisi T. Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon Journal of Applied Physics. 114. DOI: 10.1063/1.4824279  0.693
2013 Sher MJ, Lin YT, Winkler MT, Mazur E, Pruner C, Asenbaum A. Mid-infrared absorptance of silicon hyperdoped with chalcogen via fs-laser irradiation Journal of Applied Physics. 113. DOI: 10.1063/1.4790808  0.744
2013 Lee YS, Heo J, Winkler MT, Siah SC, Kim SB, Gordon RG, Buonassisi T. Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells Journal of Materials Chemistry A. 1: 15416-15422. DOI: 10.1039/C3Ta13208K  0.389
2013 Cox CR, Winkler MT, Pijpers JJH, Buonassisi T, Nocera DG. Interfaces between water splitting catalysts and buried silicon junctions Energy and Environmental Science. 6: 532-538. DOI: 10.1039/C2Ee23932A  0.321
2012 Ertekin E, Winkler MT, Recht D, Said AJ, Aziz MJ, Buonassisi T, Grossman JC. Insulator-to-metal transition in selenium-hyperdoped silicon: observation and origin. Physical Review Letters. 108: 026401. PMID 22324699 DOI: 10.1103/Physrevlett.108.026401  0.408
2012 Winkler MT, Sher MJ, Lin YT, Smith MJ, Zhang H, Gradečak S, Mazur E. Studying femtosecond-laser hyperdoping by controlling surface morphology Journal of Applied Physics. 111. DOI: 10.1063/1.4709752  0.701
2012 Powell DM, Winkler MT, Choi HJ, Simmons CB, Needleman DB, Buonassisi T. Crystalline silicon photovoltaics: A cost analysis framework for determining technology pathways to reach baseload electricity costs Energy and Environmental Science. 5: 5874-5883. DOI: 10.1039/C2Ee03489A  0.303
2011 Winkler MT, Recht D, Sher MJ, Said AJ, Mazur E, Aziz MJ. Insulator-to-metal transition in sulfur-doped silicon. Physical Review Letters. 106: 178701. PMID 21635068 DOI: 10.1103/Physrevlett.106.178701  0.652
2011 Sher MJ, Winkler MT, Mazur E. Pulsed-laser hyperdoping and surface texturing for photovoltaics Mrs Bulletin. 36: 439-455. DOI: 10.1557/Mrs.2011.111  0.715
2011 Sullivan JT, Wilks RG, Winkler MT, Weinhardt L, Recht D, Said AJ, Newman BK, Zhang Y, Blum M, Krause S, Yang WL, Heske C, Aziz MJ, Br M, Buonassisi T. Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur Applied Physics Letters. 99. DOI: 10.1063/1.3643050  0.427
2011 Smith MJ, Lin YT, Sher MJ, Winkler MT, Mazur E, Gradečak S. Pressure-induced phase transformations during femtosecond-laser doping of silicon Journal of Applied Physics. 110. DOI: 10.1063/1.3633528  0.705
2011 Smith MJ, Winkler M, Sher MJ, Lin YT, Mazur E, Gradečak S. The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser irradiated silicon Applied Physics a: Materials Science and Processing. 105: 795-800. DOI: 10.1007/S00339-011-6651-2  0.709
2010 Maloney PG, Smith P, King V, Billman C, Winkler M, Mazur E. Emissivity of microstructured silicon. Applied Optics. 49: 1065-8. PMID 20197803 DOI: 10.1364/Ao.49.001065  0.543
2009 Newman B, Sullivan J, Marcus M, Fakra S, Winkler M, Sher R, Buonassisi T. Synchrotron-Based X-Ray Absorption Spectroscopy applied to Novel Silicon Solar Cell Material Energy. DOI: 10.1364/Energy.2009.Wc8  0.53
2009 Tull BR, Winkler MT, Mazur E. The role of diffusion in broadband infrared absorption in chalcogen-doped silicon Applied Physics a: Materials Science and Processing. 96: 327-334. DOI: 10.1007/S00339-009-5200-8  0.691
2009 Shih T, Winkler MT, Voss T, Mazur E. Dielectric function dynamics during femtosecond laser excitation of bulk ZnO Applied Physics a: Materials Science and Processing. 96: 363-367. DOI: 10.1007/S00339-009-5196-0  0.597
2009 Winkler M, Sher MJ, Lin YT, Mazur E. Optical hyperdoping: Using femtosecond lasers to tailor the optoelectronic properties of semiconductors Optics Infobase Conference Papers.  0.608
2008 Winkler M, Mazur E. Electronic characterization of silicon doped beyond the solubility limit via femtosecond laser irradiation 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551462  0.611
2007 Mendonca CR, Orlando S, Cosendey G, Winkler M, Mazur E. Femtosecond laser micromachining in the conjugated polymer MEH-PPV Applied Surface Science. 254: 1135-1139. DOI: 10.1016/J.Apsusc.2007.07.197  0.529
2005 Merlin J, Chao E, Winkler M, Singer K, Korneychuk P, Reznikov Y. All-optical switching in a nematic liquid crystal twist cell. Optics Express. 13: 5024-9. PMID 19498489 DOI: 10.1364/Opex.13.005024  0.318
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