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Abhishek Motayed, Ph.D. - Publications

Affiliations: 
2007 Electrical Engineering University of Maryland, College Park, College Park, MD 
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60 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Khan MAH, Debnath R, Motayed A, Rao MV. Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature. Sensors (Basel, Switzerland). 21. PMID 33477377 DOI: 10.3390/s21020624  0.377
2020 Khan MAH, Thomson B, Motayed A, Li Q, Rao MV. Functionalization of GaN Nanowire Sensors With Metal Oxides: An Experimental and DFT Investigation Ieee Sensors Journal. 20: 7138-7147. DOI: 10.1109/Jsen.2020.2978221  0.43
2020 Khan AH, Thomson B, Debnath R, Motayed A, Rao MV. Nanowire-Based Sensor Array for Detection of Cross-Sensitive Gases Using PCA and Machine Learning Algorithms Ieee Sensors Journal. 20: 6020-6028. DOI: 10.1109/Jsen.2020.2972542  0.365
2020 Khan AH, Thomson B, Yu J, Debnath R, Motayed A, Rao MV. Scalable metal oxide functionalized GaN nanowire for precise SO2 detection Sensors and Actuators B-Chemical. 318: 128223. DOI: 10.1016/J.Snb.2020.128223  0.455
2019 Khan MAH, Thomson B, Debnath R, Rani A, Motayed A, Rao MV. Reliable Anatase-Titania Nanoclusters Functionalized GaN Sensor Devices for UV assisted NO2 Gas-Sensing in ppb level. Nanotechnology. PMID 31891921 DOI: 10.1088/1361-6528/Ab6685  0.383
2019 Shi C, Rani A, Thomson B, Debnath R, Motayed A, Ioannou DE, Li Q. High-performance room-temperature TiO2-functionalized GaN nanowire gas sensors Applied Physics Letters. 115: 121602. DOI: 10.1063/1.5116677  0.45
2017 Hasan R, Motayed A, Fahad S, Rao MV. Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 52202. DOI: 10.1116/1.4998937  0.352
2016 Hasan MR, Arinze ES, Singh AK, Oleshko VP, Guo S, Rani A, Cheng Y, Kalish I, Zaghloul ME, Rao MV, Nguyen NV, Motayed A, Davydov AV, Thon SM, Debnath R. An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors. Advanced Electronic Materials. 2. PMID 27840807 DOI: 10.1002/Aelm.201600182  0.398
2016 Müller M, Schmidt G, Metzner S, Veit P, Bertram F, Krylyuk S, Debnath R, Ha JY, Wen B, Blanchard P, Motayed A, King MR, Davydov AV, Christen J. Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111) Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Ff02  0.471
2016 Xie T, Rani A, Wen B, Castillo A, Thomson B, Debnath R, Murphy TE, Gomez RD, Motayed A. The effects of surface conditions of TiO2 thin film on the UV assisted sensing response at room temperature Thin Solid Films. 620: 76-81. DOI: 10.1016/J.Tsf.2016.07.075  0.33
2015 Xie T, Hasan MR, Qiu B, Arinze ES, Nguyen NV, Motayed A, Thon SM, Debnath R. High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions. Applied Physics Letters. 107. PMID 28729741 DOI: 10.1063/1.4938129  0.352
2015 Hasan MR, Xie T, Barron SC, Liu G, Nguyen NV, Motayed A, Rao MV, Debnath R. Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates. Apl Materials. 3. PMID 26900532 DOI: 10.1063/1.4932194  0.407
2015 Xie T, Sullivan N, Steffens K, Wen B, Liu G, Debnath R, Davydov A, Gomez R, Motayed A. UV-assisted room-temperature chemiresistive NO2 sensor based on TiO2 thin film. Journal of Alloys and Compounds. 653: 255-259. PMID 26681838 DOI: 10.1016/J.Jallcom.2015.09.021  0.356
2015 Xie T, Liu G, Wen B, Ha JY, Nguyen NV, Motayed A, Debnath R. Tunable Ultraviolet Photoresponse in Solution-Processed p-n Junction Photodiodes Based on Transition-Metal Oxides. Acs Applied Materials & Interfaces. 7: 9660-7. PMID 25898025 DOI: 10.1021/Acsami.5B01420  0.407
2015 Sharma D, Motayed A, Shah PB, Amani M, Georgieva M, Glen Birdwell A, Dubey M, Li Q, Davydov AV. Transfer characteristics and low-frequency noise in single- and multi-layer MoS2 field-effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4932945  0.353
2015 Debnath R, Xie T, Wen B, Li W, Ha JY, Sullivan NF, Nguyen NV, Motayed A. A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector Rsc Advances. 5: 14646-14652. DOI: 10.1039/C4Ra14567D  0.443
2015 Williams EH, Ha JY, Juba M, Bishop B, Krylyuk S, Motayed A, Rao MV, Schreifels JA, Davydov AV. Real-time electrical detection of the formation and destruction of lipid bilayers on silicon nanowire devices Sensing and Bio-Sensing Research. 4: 103-108. DOI: 10.1016/J.Sbsr.2015.04.005  0.381
2015 Liu G, Wen B, Xie T, Castillo A, Ha JY, Sullivan N, Debnath R, Davydov A, Peckerar M, Motayed A. Top-down fabrication of horizontally-aligned gallium nitride nanowire arrays for sensor development Microelectronic Engineering. 142: 58-63. DOI: 10.1016/J.Mee.2015.08.004  0.502
2014 Sharma D, Amani M, Motayed A, Shah PB, Birdwell AG, Najmaei S, Ajayan PM, Lou J, Dubey M, Li Q, Davydov AV. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices. Nanotechnology. 25: 155702. PMID 24642948 DOI: 10.1088/0957-4484/25/15/155702  0.423
2014 King M, Motayed A, Krylyuk S, Debnath R, Ha J, Wen B, Davydov A. Morphological improvements in nanostructured nitride photodiodes Spie Newsroom. DOI: 10.1117/2.1201408.005550  0.317
2014 Debnath R, Ha JY, Wen B, Paramanik D, Motayed A, King MR, Davydov AV. Top-down fabrication of large-area GaN micro- and nanopillars Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4865908  0.443
2014 Krylyuk S, Debnath R, Yoon HP, King MR, Ha JY, Wen B, Motayed A, Davydov AV. Faceting control in core-shell GaN micropillars using selective epitaxy Apl Materials. 2. DOI: 10.1063/1.4899296  0.451
2013 Sharma D, Motayed A, Krylyuk S, Li Q, Davydov AV. Detection of deep-levels in doped silicon nanowires using low-frequency noise spectroscopy Ieee Transactions On Electron Devices. 60: 4206-4212. DOI: 10.1109/Ted.2013.2285154  0.379
2013 Aluri GS, Motayed A, Davydov AV, Oleshko VP, Bertness KA, Rao MV. Nitro-aromatic explosive sensing using GaN nanowire-titania nanocluster hybrids Ieee Sensors Journal. 13: 1883-1888. DOI: 10.1109/Jsen.2013.2241423  0.394
2013 Oleshko VP, Williams EH, Davydov AV, Krylyuk S, Motayed A, Ruzmetov D, Lam T, Lezec HJ, Talin AA. Analytical electron microscopy of semiconductor nanowire functional materials and devices for energy applications Journal of Physics: Conference Series. 471. DOI: 10.1088/1742-6596/471/1/012017  0.321
2013 Aluri GS, Motayed A, Davydov AV, Rao MV. Robust gas/chemical sensors based on functionalized gallium nitride nanowires Handbook of Functional Nanomaterials: Synthesis and Modification. 1: 269-290.  0.329
2012 Aluri GS, Motayed A, Davydov AV, Oleshko VP, Bertness KA, Sanford NA, Mulpuri RV. Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO(2)-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors. Nanotechnology. 23: 175501. PMID 22481611 DOI: 10.1088/0957-4484/23/17/175501  0.4
2012 Paramanik D, Motayed A, Aluri GS, Krylyuk S, Davydov AV, King M, McLaughlin S, Gupta S, Cramer H, Nikoobakht B. Optimization and shape control of GaN nano pillars fabricated by inductively coupled plasma etching Proceedings of Spie - the International Society For Optical Engineering. 8373. DOI: 10.1117/12.920836  0.425
2012 Aluria GS, Motayed A, Davydov AV, Oleshko V, Bertness KA, Sanford NA, Rao MV. Sensing trace amounts of nitro-aromatic explosives using nanowirenanocluster Hybrids Proceedings of Spie - the International Society For Optical Engineering. 8373. DOI: 10.1117/12.920789  0.426
2012 Paramanik D, Motayed A, Aluri GS, Ha JY, Krylyuk S, Davydov AV, King M, McLaughlin S, Gupta S, Cramer H. Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4739424  0.458
2012 Bajpai R, Motayed A, Davydov AV, Bertness KA, Zaghloul ME. UV-assisted alcohol sensing with zinc oxide-functionalized gallium nitride nanowires Ieee Electron Device Letters. 33: 1075-1077. DOI: 10.1109/Led.2012.2194129  0.38
2012 Krylyuk S, Paramanik D, King M, Motayed A, Ha JY, Bonevich JE, Talin A, Davydov AV. Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth Applied Physics Letters. 101. DOI: 10.1063/1.4769376  0.443
2012 Bajpai R, Motayed A, Davydov AV, Oleshko VP, Aluri GS, Bertness KA, Rao MV, Zaghloul ME. UV-assisted alcohol sensing using SnO 2 functionalized GaN nanowire devices Sensors and Actuators, B: Chemical. 171: 499-507. DOI: 10.1016/J.Snb.2012.05.018  0.43
2012 Williams EH, Davydov AV, Motayed A, Sundaresan SG, Bocchini P, Richter LJ, Stan G, Steffens K, Zangmeister R, Schreifels JA, Rao MV. Immobilization of streptavidin on 4H-SiC for biosensor development Applied Surface Science. 258: 6056-6063. DOI: 10.1016/J.Apsusc.2012.02.137  0.347
2011 Sanders A, Blanchard P, Bertness K, Brubaker M, Dodson C, Harvey T, Herrero A, Rourke D, Schlager J, Sanford N, Chiaramonti AN, Davydov A, Motayed A, Tsvetkov D. Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires. Nanotechnology. 22: 465703. PMID 22025018 DOI: 10.1088/0957-4484/22/46/465703  0.462
2011 Aluri GS, Motayed A, Davydov AV, Oleshko VP, Bertness KA, Sanford NA, Rao MV. Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants. Nanotechnology. 22: 295503. PMID 21673385 DOI: 10.1088/0957-4484/22/29/295503  0.426
2011 Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology. 22: 075206. PMID 21233538 DOI: 10.1088/0957-4484/22/7/075206  0.485
2011 Aluri GS, Motayed A, Davydov AV, Oleshko V, Bertness KA, Sanford NA, Rao MV. GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of Benzene and related aromatic compounds Proceedings of Spie - the International Society For Optical Engineering. 8024. DOI: 10.1117/12.883970  0.389
2011 Motayed A, Krylyuk S, Davydov AV. Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy Applied Physics Letters. 99. DOI: 10.1063/1.3637049  0.382
2010 Josell D, Beauchamp CR, Hamadani BH, Jung S, Guyer JE, Motayed A, Hangarter C, Gergel-Hackett N, Xu H, Zhitenev N. Three-dimensionally structured thin film heterojunction photovoltaics on interdigitated back-contacts Ecs Transactions. 28: 521-532. DOI: 10.1149/1.3372606  0.334
2009 Josell D, Beauchamp CR, Jung S, Hamadani BH, Motayed A, Richter LJ, Williams M, Bonevich JE, Shapiro A, Zhitenev N, Moffat TP. Three dimensionally structured CdTe thin-film photovoltaic devices with self-aligned back-contacts: Electrodeposition on interdigitated electrodes Journal of the Electrochemical Society. 156: H654-H660. DOI: 10.1149/1.3148182  0.333
2009 Krylyuk S, Davydov AV, Levin I, Motayed A, Vaudin MD. Rapid thermal oxidation of silicon nanowires Applied Physics Letters. 94. DOI: 10.1063/1.3079395  0.322
2008 Motayed A, Davydov AV. GaN-nanowire/amorphous-Si core-shell heterojunction diodes Applied Physics Letters. 93. DOI: 10.1063/1.3021390  0.486
2008 Motayed A, Davydov AV, Mohammad SN, Melngailis J. Experimental investigation of electron transport properties of gallium nitride nanowires Journal of Applied Physics. 104. DOI: 10.1063/1.2952035  0.637
2007 He M, Motayed A, Noor Mohammad S. Phase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method. The Journal of Chemical Physics. 126: 064704. PMID 17313235 DOI: 10.1063/1.2432111  0.359
2007 Motayed A, He M, Davydov AV, Melngailis J, Mohammad SN. Simple model for dielectrophoretic alignment of gallium nitride nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 120-123. DOI: 10.1116/1.2429673  0.573
2007 Motayed A, Davydov AV, Mohammad SN, Melngailis J. Gallium nitride nanowire devices - Fabrication, characterization, and transport properties 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422513  0.578
2007 Motayed A, Davydov AV, He M, Mohammad SN. Gallium nitride nanowire devices - Fabrication, characterization and simulation 65th Drc Device Research Conference. 167-168. DOI: 10.1109/DRC.2007.4373701  0.318
2007 Motayed A, Davydov AV, He M, Mohammad SN, Melngailis J. 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes Applied Physics Letters. 90. DOI: 10.1063/1.2735928  0.622
2007 Motayed A, Vaudin M, Davydov AV, Melngailis J, He M, Mohammad SN. Diameter dependent transport properties of gallium nitride nanowire field effect transistors Applied Physics Letters. 90. DOI: 10.1063/1.2434153  0.602
2006 Motayed A, He M, Davydov AV, Melngailis J, Mohammad SN. Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique Journal of Applied Physics. 100. DOI: 10.1063/1.2397383  0.667
2006 Motayed A, Davydov AV, Vaudin MD, Levin I, Melngailis J, Mohammad SN. Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2215354  0.652
2005 Davydov AV, Motayed A, Boettinger WJ, Gates RS, Xue QZ, Lee HC, Yoo YK. Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN Physica Status Solidi C: Conferences. 2: 2551-2554. DOI: 10.1002/pssc.200461605  0.303
2005 Ahrens MT, Stokes EB, Davydov A, Schenck P, Motayed A, Harris TR, Morton ST. Combinatorial study of NICKEL-GOLD P-contacts for blue indium gallium nitride light-emitting diodes Ecs Transactions. 1: 169-180.  0.344
2005 Motayed A, Davydov AV, He M, Mohammad SN. Large scale assembly of GaN nanowires using electric field assisted alignment techniques for device applications 2005 International Semiconductor Device Research Symposium. 2005: 354-355.  0.443
2004 Motayed A, Jah M, Sharma A, Anderson WT, Litton CW, Mohammad SN. Two-step surface treatment technique: Realization of nonalloyed low-resistance Ti/Al/Ti/Au ohmic contact to n-GaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 663-667. DOI: 10.1116/1.1667506  0.395
2004 Motayed A, Sharma A, Jones KA, Derenge MA, Iliadis AA, Mohammad SN. Electrical characteristics of Al xGa 1-xN schottky diodes prepared by a two-step surface treatment Journal of Applied Physics. 96: 3286-3295. DOI: 10.1063/1.1769096  0.324
2003 Motayed A, Bathe R, Wood MC, Diouf OS, Vispute RD, Noor Mohammad S. Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN Journal of Applied Physics. 93: 1087-1094. DOI: 10.1063/1.1528294  0.345
2002 Motayed A, Davydov AV, Bendersky LA, Wood MC, Derenge MA, Wang DF, Jones KA, Mohammad SN. High-transparency Ni/Au bilayer contacts to n-type GaN Journal of Applied Physics. 92: 5218-5227. DOI: 10.1063/1.1509109  0.448
2001 Wang DF, Shiwei F, Lu C, Motayed A, Jah M, Mohammad SN, Jones KA, Salamanca-Riba L. Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN Journal of Applied Physics. 89: 6214-6217. DOI: 10.1063/1.1350617  0.391
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