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Mustafa Alevli, Ph.D. - Publications

Affiliations: 
2008 Georgia State University, Atlanta, GA, United States 
Area:
Condensed Matter Physics, Optics Physics
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40 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Gungor N, Alevli M. Visible/infrared refractive index and phonon properties of GaN films grown on sapphire by hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science and Technology. 37: 50901. DOI: 10.1116/1.5097467  0.493
2019 Alkis S, Chowdhury FI, Alevli M, Dietz N, Yalızay B, Aktürk S, Nayfeh A, Okyay AK. Corrigendum: Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles (2015 J. Opt. 17 105903) Journal of Optics. 21: 049501. DOI: 10.1088/2040-8986/Ab0Ac0  0.512
2018 Gungor N, Alevli M. Role of film thickness on the structural and optical properties of GaN on Si (100) grown by hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science and Technology. 36: 21514. DOI: 10.1116/1.5003154  0.509
2018 Alevli M, Gungor N. Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science and Technology. 36. DOI: 10.1116/1.4998920  0.388
2016 Alevli M, Haider A, Kizir S, Leghari SA, Biyikli N. Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4937725  0.518
2016 Alevli M, Gungor N, Haider A, Kizir S, Leghari SA, Biyikli N. Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4936230  0.489
2015 Alkis S, Chowdhury FI, Alevli M, Dietz N, Yalizay B, Aktürk S, Nayfeh A, Okyay AK. Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles Journal of Optics (United Kingdom). 17. DOI: 10.1088/2040-8978/17/10/105903  0.545
2015 Alevli M, Gungor N, Alkis S, Ozgit-Akgun C, Donmez I, Okyay AK, Gamage S, Senevirathna I, Dietz N, Biyikli N. Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 423-429. DOI: 10.1002/Pssc.201400171  0.719
2014 Tekcan B, Alkis S, Alevli M, Dietz N, Ortac B, Biyikli N, Okyay AK. A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation Ieee Electron Device Letters. 35: 936-938. DOI: 10.1109/Led.2014.2336795  0.659
2014 El-Atab N, Cimen F, Alkis S, Ortaç B, Alevli M, Dietz N, Okyay AK, Nayfeh A. Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer Applied Physics Letters. 104: 253106. DOI: 10.1063/1.4885397  0.554
2013 Acharya AR, Gamage S, Senevirathna MKI, Alevli M, Bahadir K, Melton AG, Ferguson I, Dietz N, Thoms BD. Thermal stability of InN epilayers grown by high pressure chemical vapor deposition Applied Surface Science. 268: 1-5. DOI: 10.1016/J.Apsusc.2012.10.184  0.653
2012 Alevli M, Ozgit C, Donmez I, Biyikli N. Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3687937  0.551
2012 Ozgit C, Donmez I, Alevli M, Biyikli N. Atomic layer deposition of GaN at low temperatures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3664102  0.479
2012 Ozgit C, Donmez I, Alevli M, Biyikli N. Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition Thin Solid Films. 520: 2750-2755. DOI: 10.1016/J.Tsf.2011.11.081  0.495
2012 Alkis S, Alevli M, Burzhuev S, Vural HA, Okyay AK, Ortaç B. Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film Journal of Nanoparticle Research. 14. DOI: 10.1007/S11051-012-1048-5  0.431
2012 Alevli M, Ozgit C, Donmez I, Biyikli N. Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures Physica Status Solidi (a) Applications and Materials Science. 209: 266-271. DOI: 10.1002/Pssa.201127430  0.458
2011 Alevli M, Ozgit C, Donmez I. The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition Acta Physica Polonica A. 120. DOI: 10.12693/Aphyspola.120.A-58  0.536
2011 Alevli M, Ozgit C, Donmez I, Biyikli N. The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition Journal of Crystal Growth. 335: 51-57. DOI: 10.1016/J.Jcrysgro.2011.09.003  0.469
2010 Kirste R, Wagner MR, Schulze JH, Strittmatter A, Collazo R, Sitar Z, Alevli M, Dietz N, Hoffmann A. Optical properties of InN grown on templates with controlled surface polarities Physica Status Solidi (a) Applications and Materials Science. 207: 2351-2354. DOI: 10.1002/Pssa.201026086  0.695
2010 Durkaya G, Buegler M, Atalay R, Senevirathna I, Alevli M, Hitzemann O, Kaiser M, Kirste R, Hoffmann A, Dietz N. The influence of the group V/III molar precursor ratio on the structural properties of ingan layers grown by HPCVD Physica Status Solidi (a) Applications and Materials Science. 207: 1379-1382. DOI: 10.1002/Pssa.200983622  0.799
2010 Durkaya G, Alevli M, Buegler M, Atalay R, Gamage S, Kaiser M, Kirste R, Hoffmann A, Jamil M, Ferguson I, Dietz N. Growth temperature - Phase stability relation in In1-xGa xN epilayers grown by high-pressure CVD Materials Research Society Symposium Proceedings. 1202: 277-282.  0.825
2009 Durkaya G, Alevli M, Buegler M, Atalay R, Gamage S, Kaiser M, Kirste R, Jamil M, Ferguson I, Dietz N. Growth temperature - phase stability relation in In 1-x Ga x N epilayers grown by high-pressure CVD Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I05-21  0.802
2009 Buegler M, Alevli M, Atalay R, Durkaya G, Senevirathna I, Jamil M, Ferguson I, Dietz N. Optical and structural properties of InN grown by HPCVD Proceedings of Spie - the International Society For Optical Engineering. 7422. DOI: 10.1117/12.828163  0.815
2008 Alevli M, Atalay R, Durkaya G, Weesekara A, Perera AGU, Dietz N, Kirste R, Hoffmann A. Optical characterization of InN layers grown by high-pressure chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1023-1026. DOI: 10.1116/1.2908736  0.808
2008 Dietz N, Alevli M, Atalay R, Durkaya G, Collazo R, Tweedie J, Mita S, Sitar Z. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters. 92. DOI: 10.1063/1.2840192  0.803
2008 Bhatta RP, Thoms BD, Alevli M, Dietz N. Desorption of hydrogen from InN(0 0 0 over(1, ̄)) observed by HREELS Surface Science. 602: 1428-1432. DOI: 10.1016/J.Susc.2008.02.003  0.577
2007 Bhatta RP, Thoms BD, Weerasekera A, Perera AGU, Alevli M, Dietz N. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 967-970. DOI: 10.1116/1.2712185  0.672
2007 Bhatta RP, Thoms BD, Alevli M, Dietz N. Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition Surface Science. 601: L120-L123. DOI: 10.1016/J.Susc.2007.07.018  0.65
2007 Perera AGU, Ariyawansa G, Rinzan MBM, Stevens M, Alevli M, Dietz N, Matsik SG, Asghar A, Ferguson IT, Luo H, Bezinger A, Liu HC. Performance improvements of ultraviolet/infrared dual-band detectors Infrared Physics and Technology. 50: 142-148. DOI: 10.1016/J.Infrared.2006.10.013  0.552
2006 Alevli M, Durkaya G, Kirste R, Weesekara A, Perera U, Fenwick W, Woods V, Ferguson IT, Hoffmann A, Dietz N. Properties of InN layers grown by High Pressure CVD Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I08-04  0.821
2006 Strassburg M, Kane MH, Asghar A, Song Q, Zhang ZJ, Senawiratne J, Alevli M, Dietz N, Summers CJ, Ferguson IT. The Fermi level dependence of the optical and magnetic properties of Ga1-xMnxN grown by metal-organic chemical vapour deposition Journal of Physics Condensed Matter. 18: 2615-2622. DOI: 10.1088/0953-8984/18/9/001  0.772
2006 Alevli M, Durkaya G, Weerasekara A, Perera AGU, Dietz N, Fenwick W, Woods V, Ferguson I. Characterization of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters. 89. DOI: 10.1063/1.2352797  0.828
2006 Ariyawansa G, Rinzan MBM, Alevli M, Strassburg M, Dietz N, Perera AGU, Matsik SG, Asghar A, Ferguson IT, Luo H, Bezinger A, Liu HC. GaN/AlGaN ultraviolet/infrared dual-band detector Applied Physics Letters. 89. DOI: 10.1063/1.2345226  0.595
2006 Bhatta RP, Thoms BD, Alevli M, Woods V, Dietz N. Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition Applied Physics Letters. 88. DOI: 10.1063/1.2187513  0.799
2006 Alevli M, Durkaya G, Woods V, Haboeck U, Kang H, Senawiratne J, Strassburg M, Ferguson IT, Hoffmann A, Dietz N. Properties of InN grown by high-pressure CVD Materials Research Society Symposium Proceedings. 892: 77-82.  0.846
2006 Alevli M, Durkaya G, Kirste R, Weesekara A, Perera U, Fenwick W, Woods V, Ferguson IT, Hoffmann A, Dietz N. Properties of InN layers grown by high pressure CVD Materials Research Society Symposium Proceedings. 955: 291-296.  0.81
2005 Alevli M, Durkaya G, Woods V, Habeck U, Kang H, Senawiratne J, Strassburg M, Ferguson IT, Hoffmann A, Dietz N. Properties of InN grown by High-Pressure CVD Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff06-02  0.831
2005 Dietz N, Alevli M, Kang H, Straßburg M, Woods V, Ferguson IT, Moore CE, Cardelino BH. The growth of InN and related alloys by high-pressure CVD Proceedings of Spie - the International Society For Optical Engineering. 5912: 1-8. DOI: 10.1117/12.616699  0.842
2005 Dietz N, Alevli M, Woods V, Strassburg M, Kang H, Ferguson IT. The characterization of InN growth under high-pressure CVD conditions Physica Status Solidi (B) Basic Research. 242: 2985-2994. DOI: 10.1002/Pssb.200562246  0.843
2003 Perera AGU, Matsik SG, Rinzan MBM, Weerasekara A, Alevli M, Liu HC, Buchanan M, Zvonkov B, Gavrilenko V. The effects of light-heavy hole transitions on the cutoff wavelengths of far infrared detectors Infrared Physics and Technology. 44: 347-353. DOI: 10.1016/S1350-4495(03)00154-3  0.339
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