| Year |
Citation |
Score |
| 2004 |
De Almeida RMC, Baumvol IJR, Ganem JJ, Trimaille I, Rigo S. Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach Journal of Applied Physics. 95: 1770-1773. DOI: 10.1063/1.1639139 |
0.42 |
|
| 2004 |
Trimaille I, Ganem JJ, Vickridge IC, Rigo S, Battistig G, Szilagyi E, Baumvol IJ, Radtke C, Stedile FC. Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 914-918. DOI: 10.1016/j.nimb.2004.01.187 |
0.315 |
|
| 2002 |
Vickridge IC, Trimaille I, Ganem JJ, Rigo S, Radtke C, Baumvol IJ, Stedile FC. Limiting step involved in the thermal growth of silicon oxide films on silicon carbide. Physical Review Letters. 89: 256102. PMID 12484903 |
0.538 |
|
| 2000 |
Trimaille I, Ganem JJ, Gösset LG, Bailly O, Rigo S, Cantin JL, Von Bardeleben HJ. Furnace oxynitridation in nitric oxide of thin silicon oxide: Atomic transport mechanisms and interfacial microstructure Materials Research Society Symposium - Proceedings. 592: 269-274. |
0.348 |
|
| 1999 |
Åkermark T, Gosset LG, Ganem JJ, Trimaille I, Rigo S. Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon Journal of the Electrochemical Society. 146: 3389-3392. DOI: 10.1149/1.1392483 |
0.339 |
|
| 1999 |
Åkermark T, Ganem JJ, Trimaille I, Vickridge I, Rigo S. Temperature and Pressure Dependence of the Oxygen Exchange at the SiO2-Si Interface, O2 ↔ SiO2, during Dry Thermal Oxidation of Silicon Journal of Physical Chemistry B. 103: 9910-9914. |
0.379 |
|
| 1999 |
Åkermark T, Gosset LG, Ganem JJ, Trimaille I, Vickridge I, Rigo S. Time dependence of the oxygen exchange O2↔SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon Journal of Applied Physics. 86: 1153-1155. |
0.378 |
|
| 1998 |
Baumvol IJR, Ganem JJ, Gosset LG, Trimaille I, Rigo S. Incorporation of oxygen and nitrogen in ultrathin films of SiO2 annealed in NO Applied Physics Letters. 72: 2999-3001. DOI: 10.1063/1.121520 |
0.38 |
|
| 1998 |
Gosset LG, Ganem JJ, Trimaille I, Rigo S, Rochet F, Dufour G, Jolly F, Stedile FC, Baumvol IJR. High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 136: 521-527. |
0.604 |
|
| 1997 |
Ganem JJ, Trimaille I, André P, Rigo S, Stedile FC, Baumvol IJR. Diffusion of near surface defects during the thermal oxidation of silicon Journal of Applied Physics. 81: 8109-8111. |
0.346 |
|
| 1997 |
Baumvol IJR, Stedile FC, Ganem JJ, Trimaille I, Rigo S. Isotopic tracing during rapid thermal growth of sillicon oxyniride films on Si in O2, NH3, and N2O Applied Physics Letters. 70: 2007-2009. |
0.413 |
|
| 1996 |
Ganem JJ, Rigo S, Trimaille I, Baumvol IJR, Stedile FC. Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods Applied Physics Letters. 68: 2366-2368. DOI: 10.1063/1.116135 |
0.423 |
|
| 1996 |
Baumvol IJR, Stedile FC, Ganem JJ, Trimaille I, Rigo S. Nitrogen transport during rapid thermal growth of silicon oxynitride films in N2O Applied Physics Letters. 69: 2385-2387. |
0.45 |
|
| 1996 |
Baumvol IJR, Stedile FC, Ganem JJ, Trimaille I, Rigo S. Thermal nitridation of SiO2 films in ammonia: The role of hydrogen Journal of the Electrochemical Society. 143: 1426-1434. |
0.392 |
|
| 1996 |
Baumvol IJR, Borucki L, Chaumont J, Ganem JJ, Kaytasov O, Piel N, Rigo S, Schulte WH, Stedile FC, Trimaille I. Isotopic tracing of Si during thermal growth of Si3N4 ultrathin films Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 499-504. |
0.422 |
|
| 1996 |
Baumvol IJR, Stedile FC, Ganem JJ, Trimaille I, Rigo S. Thermal nitridation of SiO2 films in ammonia: Isotopic tracing of nitrogen and oxygen in further stages and in reoxidation Journal of the Electrochemical Society. 143: 2946-2952. |
0.401 |
|
| 1996 |
Stedile FC, Baumvol IJR, Oppenheim IF, Trimaille I, Ganem JJ, Rigo S. Thickness of the SiO2/Si interface and composition of silicon oxide thin films: Effect of wafer cleaning procedures Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 493-498. |
0.422 |
|
| 1996 |
Baumvol IJR, Stedile FC, Ganem JJ, Trimaille I, Rigo S. Thermal nitridation of SiO2 films in ammonia: Isotopic tracing of nitrogen and oxygen in the initial stages Journal of the Electrochemical Society. 143: 2938-2945. |
0.399 |
|
| 1994 |
Morazzani V, Grosman A, Ortega C, Rigo S, Siejka J. Contribution of IBA techniques to the study of porous silicon films Nuclear Inst. and Methods in Physics Research, B. 85: 287-292. DOI: 10.1016/0168-583X(94)95829-7 |
0.39 |
|
| 1994 |
Stedile FC, Baumvol IJR, Ganem JJ, Rigo S, Trimaille I, Battistig G, Schulte WH, Becker HW. IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning Nuclear Inst. and Methods in Physics Research, B. 85: 248-254. DOI: 10.1016/0168-583X(94)95821-1 |
0.508 |
|
| 1994 |
Bréelle E, Rigo S, Kilner JA, Ganem JJ. SIMS study of rapid nitridation of silicon dioxide thick films in an ammonia ambient Microelectronics Journal. 25: 501-505. DOI: 10.1016/0026-2692(94)90034-5 |
0.402 |
|
| 1993 |
Ganem JJ, Battistig G, Rigo S, Trimaille I. A study of the initial stages of the oxidation of silicon using 18O2 and RTP Applied Surface Science. 65: 647-653. DOI: 10.1016/0169-4332(93)90734-S |
0.314 |
|
| 1993 |
Ganem JJ, Rigo S, Trimaille I. Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model Microelectronic Engineering. 22: 35-38. DOI: 10.1016/0167-9317(93)90125-O |
0.341 |
|
| 1993 |
Morazzani V, Chamarro M, Grosman A, Ortega C, Rigo S, Siejka J, von Bardeleben HJ. Partial oxidation of porous silicon by thermal process: study of structure and electronic defects Journal of Luminescence. 57: 45-49. DOI: 10.1016/0022-2313(93)90104-U |
0.345 |
|
| 1993 |
Grosman A, Chamarro M, Morazzani V, Ortega C, Rigo S, Siejka J, von Bardeleben HJ. Study of anodic oxidation of porous silicon: relation between growth and physical properties Journal of Luminescence. 57: 13-18. DOI: 10.1016/0022-2313(93)90098-8 |
0.332 |
|
| 1992 |
Lebland F, Licoppe C, Gao Y, Nissim YI, Rigo S. Rapid thermal chemical vapour deposition of SiOxNy films Applied Surface Science. 54: 125-129. DOI: 10.1016/0169-4332(92)90031-R |
0.399 |
|
| 1992 |
Ganem JJ, Rigo S, Trimaille I, Lu GN, Molle P. Deuteron beam analysis of rapid thermal nitridation of silicon and thin SiO2 films Nuclear Inst. and Methods in Physics Research, B. 64: 778-783. DOI: 10.1016/0168-583X(92)95577-E |
0.411 |
|
| 1992 |
Ganem JJ, Rigo S, Trimaille I, Lu GN, Dufour G, Roulet H. NRA and XPS characterizations of layers formed by rapid thermal nitridation of thin SiO2 films Nuclear Inst. and Methods in Physics Research, B. 64: 744-749. DOI: 10.1016/0168-583X(92)95570-H |
0.38 |
|
| 1992 |
Rigo S. Nuclear microanalysis study of the growth of thin dielectric films on silicon by classical and rapid thermal treatments Nuclear Inst. and Methods in Physics Research, B. 64: 1-11. DOI: 10.1016/0168-583X(92)95432-Q |
0.444 |
|
| 1989 |
Mott NF, Rigo S, Rochet F, Stoneham AM. Oxidation of silicon Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 60: 189-212. DOI: 10.1080/13642818908211190 |
0.613 |
|
| 1989 |
Trimaille I, Rigo S. Use of 18O isotopic labelling to study thermal dry oxidation of silicon as a function of temperature and pressure Applied Surface Science. 39: 65-80. DOI: 10.1016/0169-4332(89)90420-0 |
0.351 |
|
| 1988 |
Rochet F, Rigo S. EFFECT OF PRESSURE ON REACTION BETWEEN DEUTERATED WATER AND THIN AMORPHOUS SILICA FILMS. Philosophical Magazine Letters. 57: 123-128. DOI: 10.1080/09500838808229621 |
0.591 |
|
| 1987 |
Rochet F, Rigo S, Froment M, D’Anterroches C, Maillot C, Roulet H, Dufour G. The thermal oxidation of silicon the special case of the growth of very thin films Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 55: 309. DOI: 10.1080/13642818708211211 |
0.691 |
|
| 1986 |
Rochet F, Rigo S. EFFECT OF PRESSURE ON THERMALLY INDUCED DIFFUSIVITY AND REACTIVITY OF WATER IN THIN AMORPHOUS SILICA FILMS. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 55: 747-755. DOI: 10.1080/13642818708218378 |
0.621 |
|
| 1986 |
Rochet F, Rigo S, Froment M, d'Anterroches C, Maillot C, Roulet H, Dufour G. THERMAL OXIDATION OF SILICON: THE SPECIAL CASE OF THE GROWTH OF VERY THIN FILMS. Advances in Physics. 35: 237-274. DOI: 10.1080/00018738600101891 |
0.691 |
|
| 1986 |
Maillot C, Roulet H, Dufour G, Rochet F, Rigo S. Study of atomic transport mechanisms during thermal nitridation of silicon in ammonia using 15N and D labelled gas Applied Surface Science. 26: 326-334. DOI: 10.1016/0169-4332(86)90073-5 |
0.529 |
|
| 1986 |
Rochet F, Rigo S, Froment M, D'Anterroches C, Maillot C, Roulet H, Dufour G. THERMAL OXIDATION OF SILICON - THE SPECIAL CASE OF THE GROWTH OF VERY THIN FILMS. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 55: 309. |
0.691 |
|
| 1985 |
Collot P, Gautherin G, Agius B, Rigo S, Rochet F. LOW-PRESSURE OXIDATION OF SILICON STIMULATED BY LOW-ENERGY ELECTRON BOMBARDMENT. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 52: 1051-1069. DOI: 10.1080/13642818508238950 |
0.562 |
|
| 1984 |
Agius B, Ecole Normale Superieure GdPdS, Rigo S, Rochet F, Froment M, Maillot C, Roulet H, Dufour G. STRUCTURAL EVOLUTION OF VERY THIN SILICON OXIDE FILMS DURING THERMAL GROWTH IN DRY OXYGEN. Applied Physics Letters. 44: 48-50. DOI: 10.1063/1.94547 |
0.689 |
|
| 1984 |
Rochet F, Agius B, Rigo S. **1**8O STUDY OF THE OXIDATION MECHANISM OF SILICON IN DRY OXYGEN. Journal of the Electrochemical Society. 131: 914-923. |
0.596 |
|
| 1983 |
Agius B, Froment M, Rigo S, Rochet F. OXYGEN TRANSPORT STUDIED BY **1**8O LABELLING IN THIN THERMAL SILICON OXIDE FILMS IN CONNECTION WITH THEIR STRUCTURAL CHARACTERISTICS. Thin Films Science and Technology. 463-471. |
0.666 |
|
| 1982 |
Rigo S, Rochet F, Agius B, Straboni A. **1**8O STUDY OF COOPERATIVE DIFFUSION AND CHEMICAL REACTION DURING THERMAL TREATMENTS OF SILICA FILMS IN WATER VAPOR. Journal of the Electrochemical Society. 129: 867-876. |
0.611 |
|
| 1979 |
Rosencher E, Straboni A, Rigo S, Amsel G. An 18O study of the thermal oxidation of silicon in oxygen Applied Physics Letters. 34: 254-256. DOI: 10.1063/1.90771 |
0.401 |
|
| 1977 |
Rigo S, Turos A, Velasco G. RUTHERFORD SCATTERING ANALYSIS OF THERMAL INTERACTIONS BETWEEN AMORPHOUS OR CRYSTALLINE SILICON AND TANTALUM FILMS . 2: 1109-1112. |
0.403 |
|
| 1976 |
Rigo S, Amsel G, Croset M. Investigation of reactively sputtered silicon nitride films by complementary use of backscattering and nuclear-reaction microanalysis results Journal of Applied Physics. 47: 2800-2810. DOI: 10.1063/1.323076 |
0.419 |
|
| 1971 |
Croset M, Rigo S, Amsel G. Investigation of the composition of sputtered silicone nitride films by nuclear microanalysis Applied Physics Letters. 19: 33-35. DOI: 10.1063/1.1653811 |
0.41 |
|
| Show low-probability matches. |