| Year |
Citation |
Score |
| 2020 |
Chan L, Shapturenka P, Pynn CD, Margalith T, DenBaars SP, Gordon MJ. Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN Applied Physics Letters. 117: 21104. DOI: 10.1063/5.0013453 |
0.419 |
|
| 2020 |
Ley RT, Smith JM, Wong MS, Margalith T, Nakamura S, DenBaars SP, Gordon MJ. Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation Applied Physics Letters. 116: 251104. DOI: 10.1063/5.0011651 |
0.374 |
|
| 2020 |
Reilly CE, Lheureux G, Cozzan C, Zeitz E, Margalith T, Nakamura S, Seshadri R, Weisbuch C, DenBaars SP. Transmission Geometry Laser Lighting with A Compact Emitter Physica Status Solidi (a). DOI: 10.1002/Pssa.202000391 |
0.379 |
|
| 2018 |
Forman CA, Lee S, Young EC, Kearns JA, Cohen DA, Leonard JT, Margalith T, DenBaars SP, Nakamura S. Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact Applied Physics Letters. 112: 111106. DOI: 10.1063/1.5007746 |
0.434 |
|
| 2017 |
Pynn CD, Chan L, Lora Gonzalez F, Berry A, Hwang D, Wu H, Margalith T, Morse DE, DenBaars SP, Gordon MJ. Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring. Optics Express. 25: 15778-15785. PMID 28789090 DOI: 10.1364/Oe.25.015778 |
0.43 |
|
| 2017 |
Forman C, Leonard J, Yonkee B, Pynn C, Mates T, Cohen D, Farrell R, Margalith T, DenBaars S, Speck J, Nakamura S. Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect Journal of Crystal Growth. 464: 197-200. DOI: 10.1016/J.Jcrysgro.2016.11.058 |
0.332 |
|
| 2016 |
Leonard JT, Young EC, Yonkee BP, Cohen DA, Shen C, Margalith T, Ng TK, Denbaars SP, Ooi BS, Speck JS, Nakamura S. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts Proceedings of Spie. 9748. DOI: 10.1117/12.2206211 |
0.51 |
|
| 2015 |
Lee C, Zhang C, Cantore M, Farrell RM, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express. 23: 16232-7. PMID 26193595 DOI: 10.1364/Oe.23.016232 |
0.37 |
|
| 2015 |
Leonard JT, Young EC, Yonkee BP, Cohen DA, Margalith T, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact Applied Physics Letters. 107. DOI: 10.1063/1.4929944 |
0.497 |
|
| 2015 |
Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Margalith T, Lee S, Denbaars SP, Speck JS, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture Applied Physics Letters. 107. DOI: 10.1063/1.4926365 |
0.456 |
|
| 2004 |
Fujii T, David A, Schwach C, Pattison PM, Sharma R, Fujito K, Margalith T, Denbaars SP, Weisbuch C, Nakamura S. Micro cavity effect in GaN-based light-emitting diodes formed by laser lift-off and etch-back technique Japanese Journal of Applied Physics, Part 2: Letters. 43: L411-L413. DOI: 10.1143/Jjap.43.L411 |
0.454 |
|
| 2004 |
Tavernier PR, Margalith T, Williams J, Green DS, Keller S, DenBaars SP, Mishra UK, Nakamura S, Clarke DR. The growth of N-face GaN by MOCVD: Effect of Mg, Si, and In Journal of Crystal Growth. 264: 150-158. DOI: 10.1016/J.Jcrysgro.2004.01.023 |
0.312 |
|
| 2004 |
Katona TM, Margalith T, Moe C, Schmidt MC, Nakamura S, Speck JS, DenBaars SP. Growth and Fabrication of Short Wavelength UV LEDs Proceedings of Spie - the International Society For Optical Engineering. 5187: 250-259. |
0.316 |
|
| 2003 |
Katona TM, Schmidt MC, Margalith T, Moe C, Tamura H, Sato H, Funaoka C, Underwood R, Nakamura S, Speck JS, DenBaars SP. 336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction Physica Status Solidi C: Conferences. 2206-2209. DOI: 10.1002/Pssc.200303397 |
0.373 |
|
| 2002 |
Tavernier PR, Margalith T, Coldren LA, DenBaars SP, Clarke DR. Chemical mechanical polishing of gallium nitride Electrochemical and Solid-State Letters. 5: G61-G64. DOI: 10.1149/1.1485807 |
0.462 |
|
| 2001 |
Stonas AR, Margalith T, DenBaars SP, Coldren LA, Hu EL. Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications Applied Physics Letters. 78: 1945-1947. DOI: 10.1063/1.1352663 |
0.505 |
|
| 2000 |
Margalith T, Abare AC, Buchinsky O, Cohen DA, Hansen M, Stonas AR, Mack MP, Hu EL, DenBaars SP, Coldren LA. Nitride-based lasers: Advances in cavity design Proceedings of Spie - the International Society For Optical Engineering. 3944: I/-. |
0.598 |
|
| 1999 |
Margalith T, Buchinsky O, Cohen DA, Abare AC, Hansen M, DenBaars SP, Coldren LA. Indium tin oxide contacts to gallium nitride optoelectronic devices Applied Physics Letters. 74: 3930-3932. DOI: 10.1063/1.124227 |
0.626 |
|
| 1999 |
Margalith T, Buchinsky O, Cohen DA, Abare AC, Hansen M, DenBaars SP, Coldren LA. Indium tin oxide contacts to gallium nitride optoelectronic devices Applied Physics Letters. 74: 3930-3932. DOI: 10.1063/1.124227 |
0.614 |
|
| 1999 |
Buchinsky O, Margalith T, Cohen DA, Abare AC, DenBaars SP, Coldren LA. Transparent contact to p-GaN: indium tin oxide/titanium nitride Leos Summer Topical Meeting. 79-80. |
0.637 |
|
| 1998 |
Cohen DA, Margalith T, Abare AC, MacK MP, Coldren LA, Denbaars SP, Clarke DR. Catastrophic optical damage in GaInN multiple quantum wells Applied Physics Letters. 72: 3267-3269. DOI: 10.1063/1.121619 |
0.63 |
|
| 1998 |
Cohen DA, Margalith T, Abare AC, Mack MP, Keller S, Coldren LA, DenBaars SP, Clarke DR. Damage from stimulated emission in optically pumped GaInN multiple quantum wells Conference On Lasers and Electro-Optics Europe - Technical Digest. 310. |
0.603 |
|
| 1995 |
Toda A, Margalith T, Imanishi D, Yanashima K, Ishibashi A. MOCVD-grown blue-green laser diode Electronics Letters. 31: 1921-1922. DOI: 10.1049/el:19951324 |
0.386 |
|
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