Year |
Citation |
Score |
2017 |
Chan SH, Bisi D, Liu X, Yeluri R, Tahhan M, Keller S, DenBaars SP, Meneghini M, Mishra UK. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN Journal of Applied Physics. 122: 174101. DOI: 10.1063/1.5009757 |
0.779 |
|
2016 |
Bisi D, Chan SH, Liu X, Yeluri R, Keller S, Meneghini M, Meneghesso G, Zanoni E, Mishra UK. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 108. DOI: 10.1063/1.4944466 |
0.801 |
|
2016 |
Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157 |
0.81 |
|
2015 |
Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866 |
0.733 |
|
2014 |
Yeluri R, Lu J, Browne D, Hurni CA, Chowdhury S, Keller S, Speck JS, Mishra UK. Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2014.6872393 |
0.559 |
|
2014 |
Yeluri R, Liu X, Guidry M, Koksaldi OS, Lal S, Kim J, Lu J, Keller S, Mishra UK. Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN Applied Physics Letters. 105. DOI: 10.1063/1.4903344 |
0.754 |
|
2014 |
Mazumder B, Liu X, Yeluri R, Wu F, Mishra UK, Speck JS. Atom probe tomography studies of Al2O3 gate dielectrics on GaN Journal of Applied Physics. 116. DOI: 10.1063/1.4896498 |
0.653 |
|
2014 |
Liu X, Kim J, Suntrup DJ, Wienecke S, Tahhan M, Yeluri R, Chan SH, Lu J, Li H, Keller S, Mishra UK. In situ metalorganic chemical vapor deposition of Al2O 3 on N-face GaN and evidence of polarity induced fixed charge Applied Physics Letters. 104. DOI: 10.1063/1.4886768 |
0.704 |
|
2013 |
Liu X, Kim J, Yeluri R, Lal S, Li H, Lu J, Keller S, Mazumder B, Speck JS, Mishra UK. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 114. DOI: 10.1063/1.4827201 |
0.837 |
|
2013 |
Yeluri R, Liu X, Swenson BL, Lu J, Keller S, Mishra UK. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114. DOI: 10.1063/1.4819402 |
0.811 |
|
2013 |
Liu X, Yeluri R, Kim J, Lal S, Raman A, Lund C, Wienecke S, Lu J, Laurent M, Keller S, Mishra UK. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 103. DOI: 10.1063/1.4817385 |
0.738 |
|
2013 |
Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997 |
0.713 |
|
2013 |
Liu X, Yeluri R, Lu J, Mishra UK. Effects of H2O pretreatment on the capacitance-voltage characteristics of atomic-layer-deposited Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Journal of Electronic Materials. 42: 33-39. DOI: 10.1007/S11664-012-2246-8 |
0.689 |
|
2012 |
Yeluri R, Swenson BL, Mishra UK. Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material Journal of Applied Physics. 111. DOI: 10.1063/1.3687355 |
0.806 |
|
2011 |
Fujiwara T, Yeluri R, Denninghoff D, Lu J, Keller S, Speck JS, DenBaars SP, Mishra UK. Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with +3 v of threshold voltage using Al2O3 deposited by atomic layer deposition Applied Physics Express. 4. DOI: 10.1143/Apex.4.096501 |
0.801 |
|
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