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Paul Simmonds - Publications

Affiliations: 
Material Science and Engineering Boise State University, Boise, ID, United States 
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38 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Vallejo KD, Cabrera-Perdomo CI, Garrett TA, Drake MD, Liang B, Grossklaus KA, Simmonds PJ. Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots. Acs Nano. PMID 36649642 DOI: 10.1021/acsnano.2c08985  0.818
2022 Vallejo KD, Kabir F, Poudel N, Marianetti C, Hurley DH, Simmonds P, Dennett CA, Gofryk K. Advances in actinide thin films: synthesis, properties, and future directions. Reports On Progress in Physics. Physical Society (Great Britain). PMID 36179676 DOI: 10.1088/1361-6633/ac968e  0.728
2021 Schuck CF, Boutelle R, Silverman K, Moody G, Simmonds PJ. Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting Journal of Physics: Photonics. 3: 024012. DOI: 10.1088/2515-7647/abf24e  0.44
2021 Sautter KE, Schuck CF, Smith JC, Vallejo KD, Garrett TA, Soares J, Coleman HJ, Henry MM, Jankowski E, Ratsch C, Simmonds PJ. Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A Crystal Growth & Design. 21: 1674-1682. DOI: 10.1021/ACS.CGD.0C01528  0.531
2020 Schuck CF, Vallejo KD, Garrett T, Yuan Q, Wang Y, Liang B, Simmonds PJ. Impact of arsenic species on self-assembly of triangular and hexagonal tensile-strained GaAs(111)A quantum dots Semiconductor Science and Technology. 35: 105001. DOI: 10.1088/1361-6641/Aba6E0  0.81
2020 Sautter KE, Vallejo KD, Simmonds PJ. Strain-Driven Quantum Dot Self-Assembly by Molecular Beam Epitaxy Journal of Applied Physics. 128: 31101. DOI: 10.1063/5.0012066  0.809
2020 Sautter KE, Schuck CF, Garrett TA, Weltner AE, Vallejo KD, Ren D, Liang B, Grossklaus KA, Vandervelde TE, Simmonds PJ. Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A Journal of Crystal Growth. 533: 125468. DOI: 10.1016/J.Jcrysgro.2019.125468  0.828
2019 Schuck CF, Roy SK, Garrett T, Yuan Q, Wang Y, Cabrera CI, Grossklaus KA, Vandervelde TE, Liang B, Simmonds PJ. Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness. Scientific Reports. 9: 18179. PMID 31796804 DOI: 10.1038/S41598-019-54668-Z  0.799
2019 Vallejo KD, Garrett TA, Sautter KE, Saythavy K, Liang B, Simmonds PJ. InAs(111)A homoepitaxy with molecular beam epitaxy Journal of Vacuum Science & Technology B. 37: 61810. DOI: 10.1116/1.5127857  0.764
2019 Grossklaus KA, Schuck CF, Simmonds PJ, Vandervelde TE. Examination of the Shape and Structure of (111)-oriented GaAs Tensile-Strained Quantum Dots using Transmission Electron Microscopy, Electron Energy Loss Spectroscopy, and Atom Probe Tomography Microscopy and Microanalysis. 25: 2208-2209. DOI: 10.1017/S1431927619011772  0.362
2018 Schuck CF, McCown RA, Hush A, Mello A, Roy S, Spinuzzi JW, Liang B, Huffaker DL, Simmonds PJ. Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 031803. DOI: 10.1116/1.5018002  0.549
2017 Yerino CD, Liang B, Huffaker DL, Simmonds PJ, Lee ML. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110) Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 010801. DOI: 10.1116/1.4972049  0.785
2016 Unsleber S, Deppisch M, Krammel CM, Vo M, Yerino CD, Simmonds PJ, Lee ML, Koenraad PM, Schneider C, Höfling S. Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express. 24: 23198-23206. PMID 27828385 DOI: 10.1364/Oe.24.023198  0.789
2016 Chang YJ, Simmonds PJ, Beekley B, Goorsky MS, Woo JCS. Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy Applied Physics Letters. 108. DOI: 10.1063/1.4947436  0.322
2015 Ji HM, Liang B, Simmonds PJ, Juang BC, Yang T, Young RJ, Huffaker DL. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence Applied Physics Letters. 106. DOI: 10.1063/1.4914895  0.422
2015 Zhao Z, Laghumavarapu RB, Simmonds PJ, Ji H, Liang B, Huffaker DL. Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.049  0.511
2014 Simmonds PJ, Sun M, Laghumavarapu RB, Liang B, Norman AG, Luo JW, Huffaker DL. Improved quantum dot stacking for intermediate band solar cells using strain compensation. Nanotechnology. 25: 445402. PMID 25319397 DOI: 10.1088/0957-4484/25/44/445402  0.436
2014 Yerino CD, Simmonds PJ, Liang B, Jung D, Schneider C, Unsleber S, Vo M, Huffaker DL, Höfling S, Kamp M, Lee ML. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting Applied Physics Letters. 105. DOI: 10.1063/1.4904944  0.82
2014 Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747  0.824
2013 Simmonds PJ, Yerino CD, Sun M, Liang B, Huffaker DL, Dorogan VG, Mazur Y, Salamo G, Lee ML. Tuning quantum dot luminescence below the bulk band gap using tensile strain. Acs Nano. 7: 5017-23. PMID 23701255 DOI: 10.1021/Nn400395Y  0.82
2013 Sun M, Simmonds PJ, Laghumavarapu RB, Lin A, Reyner CJ, Liang B, Huffaker DL. Towards intermediate-band solar cells with InAs/AlAsSb quantum dots Conference Record of the Ieee Photovoltaic Specialists Conference. 3493-3496. DOI: 10.1109/PVSC.2013.6744245  0.428
2013 Sun M, Simmonds PJ, Babu Laghumavarapu R, Lin A, Reyner CJ, Duan HS, Liang B, Huffaker DL. Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots Applied Physics Letters. 102. DOI: 10.1063/1.4776221  0.449
2012 Simmonds PJ, Lee ML. Tensile-strained growth on low-index GaAs Journal of Applied Physics. 112: 54313. DOI: 10.1063/1.4749407  0.646
2012 Simmonds PJ, Babu Laghumavarapu R, Sun M, Lin A, Reyner CJ, Liang B, Huffaker DL. Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers Applied Physics Letters. 100. DOI: 10.1063/1.4729419  0.491
2011 Rivoire K, Buckley S, Song Y, Simmonds P, Lee ML, Vučković J. Photoluminescence from In0.5Ga0.5P/GaP quantum dots coupled to photonic crystal cavities Optics Infobase Conference Papers. DOI: 10.1364/Fio.2011.Ftho3  0.729
2011 Tomasulo S, Simon J, Simmonds PJ, Biagiotti J, Lee ML. Molecular beam epitaxy of metamorphic InyGa1-yP solar cells on mixed anion GaAsx P1-x/GaAs graded buffers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559119  0.739
2011 Simmonds PJ, Simon J, Woodall JM, Lee ML. Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547716  0.619
2011 Simon J, Simmonds PJ, Woodall JM, Lee ML. Graphitized carbon on GaAs(100) substrates Applied Physics Letters. 98. DOI: 10.1063/1.3555442  0.601
2011 Simon J, Tomasulo S, Simmonds PJ, Romero M, Lee ML. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells Journal of Applied Physics. 109. DOI: 10.1063/1.3525599  0.764
2010 Simon J, Tomasulo S, Simmonds P, Romero MJ, Lee ML. Growth of Metamorphic InGaP for Wide-Bandgap Photovoltaic Junction by MBE Mrs Proceedings. 1268. DOI: 10.1557/Proc-1268-Ee06-04  0.763
2010 Lee ML, Simmonds PJ. Tensile strained III-V self-assembled nanostructures on a (110) surface Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.860781  0.66
2010 Simon J, Tomasulo S, Simmonds PJ, Romero M, Lee ML. Metamorphic InGaP on GaAs and GaP for wide-bandgap photovoltaic junctions Conference Record of the Ieee Photovoltaic Specialists Conference. 2106-2110. DOI: 10.1109/PVSC.2010.5616304  0.739
2010 Song Y, Simmonds PJ, Lee ML. Self-assembled In0.5Ga0.5As quantum dots on GaP Applied Physics Letters. 97: 223110. DOI: 10.1063/1.3522647  0.64
2010 Simmonds PJ, Lee ML. Tensile strained island growth at step-edges on GaAs(110) Applied Physics Letters. 97. DOI: 10.1063/1.3498676  0.595
2008 Simmonds PJ, Sfigakis F, Beere HE, Ritchie DA, Pepper M, Anderson D, Jones GAC. Quantum transport in In0.75Ga0.25As quantum wires Applied Physics Letters. 92: 152108. DOI: 10.1063/1.2911730  0.367
2007 Simmonds PJ, Beere HE, Li HW, See P, Shields AJ, Ritchie DA. Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1044. DOI: 10.1116/1.2731334  0.472
2007 Li HW, Kardynał BE, See P, Shields AJ, Simmonds P, Beere HE, Ritchie DA. Quantum Dot Resonant Tunneling Diode for Telecommunication Wavelength Single Photon Detection Applied Physics Letters. 91: 73516. DOI: 10.1063/1.2768884  0.516
2006 Li HW, Simmonds P, Beere HE, Kardynal BE, See P, Ritchie DA, Shields AJ. Optimisation of Quantum Dot Resonant Tunnelling Diodes for Fibre Wavelength Detection Physica Status Solidi (C). 3: 4035-4038. DOI: 10.1002/Pssc.200671620  0.549
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