Christopher Yerino - Publications

Affiliations: 
2011-2015 Electrical Engineering Yale University, New Haven, CT 

9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Yerino CD, Liang B, Huffaker DL, Simmonds PJ, Lee ML. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110) Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 010801. DOI: 10.1116/1.4972049  0.662
2016 Unsleber S, Deppisch M, Krammel CM, Vo M, Yerino CD, Simmonds PJ, Lee ML, Koenraad PM, Schneider C, Höfling S. Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express. 24: 23198-23206. PMID 27828385 DOI: 10.1364/Oe.24.023198  0.695
2014 Yerino CD, Simmonds PJ, Liang B, Jung D, Schneider C, Unsleber S, Vo M, Huffaker DL, Höfling S, Kamp M, Lee ML. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting Applied Physics Letters. 105. DOI: 10.1063/1.4904944  0.68
2014 Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747  0.687
2013 Simmonds PJ, Yerino CD, Sun M, Liang B, Huffaker DL, Dorogan VG, Mazur Y, Salamo G, Lee ML. Tuning quantum dot luminescence below the bulk band gap using tensile strain. Acs Nano. 7: 5017-23. PMID 23701255 DOI: 10.1021/Nn400395Y  0.729
2012 Leung B, Zhang Y, Yerino CD, Han J, Sun Q, Chen Z, Lester S, Liao KY, Li YL. Optical emission characteristics of semipolar (1 1 2̄ 2) GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/2/024016  0.309
2012 Leung B, Sun Q, Yerino C, Zhang Y, Han J, Hyun Kong B, Koun Cho H, Liao KY, Li YL. Growth evolution and microstructural characterization of semipolar (1122) GaN selectively grown on etched r-plane sapphire Journal of Crystal Growth. 341: 27-33. DOI: 10.1016/J.Jcrysgro.2011.12.035  0.344
2009 Sun Q, Yerino CD, Leung B, Han J. Epitaxial science of GaN: nanowires, quantum dots, and mesoscopic morphology Proceedings of Spie. 7406. DOI: 10.1117/12.829140  0.509
2007 Henry T, Kim K, Ren Z, Yerino C, Han J, Tang HX. Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays. Nano Letters. 7: 3315-9. PMID 17941678 DOI: 10.1021/Nl071530X  0.32
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