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Georgios D. Panagopoulos, Ph.D. - Publications

Affiliations: 
2012 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
General Engineering, Electronics and Electrical Engineering
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Ho CH, Kim SY, Panagopoulos GD, Roy K. Statistical TDDB Degradation in Memory Circuits: Bit-Cells to Arrays Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2557279  0.646
2015 Panagopoulos G, Ho C, Kim SY, Roy K. Physics-Based Compact Modeling of Successive Breakdown in Ultrathin Oxides Ieee Transactions On Nanotechnology. 14: 7-9. DOI: 10.1109/Tnano.2014.2366379  0.646
2014 Moradi F, Panagopoulos G, Karakonstantis G, Farkhani H, Wisland DT, Madsen JK, Mahmoodi H, Roy K. Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology Microelectronics Journal. 45: 23-34. DOI: 10.1016/J.Mejo.2013.09.009  0.66
2013 Panagopoulos GD, Augustine C, Roy K. Physics-based SPICE-compatible compact model for simulating hybrid MTJ/CMOS circuits Ieee Transactions On Electron Devices. 60: 2808-2814. DOI: 10.1109/Ted.2013.2275082  0.657
2013 Ho C, Panagopoulos G, Roy K. A Self-Consistent Electrothermal Model for Analyzing NBTI Effect in p-Type Poly-Si Thin-Film Transistors Ieee Transactions On Electron Devices. 60: 288-294. DOI: 10.1109/Ted.2012.2228657  0.629
2013 Ho CH, Panagopoulos GD, Kim SY, Kim Y, Lee D, Roy K. A physics-based statistical model for reliability of STT-MRAM considering oxide variability International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 29-32. DOI: 10.1109/SISPAD.2013.6650566  0.5
2013 Ho CH, Panagopoulos GD, Kim SY, Kim Y, Lee D, Roy K. A physical model to predict STT-MRAM performance degradation induced by TDDB Device Research Conference - Conference Digest, Drc. 59-60. DOI: 10.1109/DRC.2013.6633792  0.411
2012 Sharad M, Augustine C, Panagopoulos G, Roy K. Spin-based neuron model with domain-wall magnets as synapse Ieee Transactions On Nanotechnology. 11: 843-853. DOI: 10.1109/Tnano.2012.2202125  0.631
2012 Gupta SK, Panagopoulos G, Roy K. NBTI in n-Type SOI Access FinFETs in SRAMs and Its Impact on Cell Stability and Performance Ieee Transactions On Electron Devices. 59: 2603-2609. DOI: 10.1109/Ted.2012.2209182  0.567
2012 Ho C, Panagopoulos G, Roy K. A Physical Model for Grain-Boundary-Induced Threshold Voltage Variation in Polysilicon Thin-Film Transistors Ieee Transactions On Electron Devices. 59: 2396-2402. DOI: 10.1109/Ted.2012.2205387  0.653
2011 Moradi F, Gupta SK, Panagopoulos G, Wisland DT, Mahmoodi H, Roy K. Asymmetrically Doped FinFETs for Low-Power Robust SRAMs Ieee Transactions On Electron Devices. 58: 4241-4249. DOI: 10.1109/Ted.2011.2169678  0.618
2011 Panagopoulos GD, Roy K. A three-dimensional physical model for Vth variations considering the combined effect of NBTI and RDF Ieee Transactions On Electron Devices. 58: 2337-2346. DOI: 10.1109/Ted.2011.2148720  0.545
2011 Panagopoulos G, Roy K. A Physics-Based Three-Dimensional Analytical Model for RDF-Induced Threshold Voltage Variations Ieee Transactions On Electron Devices. 58: 392-403. DOI: 10.1109/Ted.2010.2093140  0.6
2006 Dimitropoulos PD, Karampatzakis DP, Panagopoulos GD, Stamoulis GI. A low-power/low-noise readout circuit for integrated capacitive sensors Ieee Sensors Journal. 6: 755-769. DOI: 10.1109/Jsen.2006.874439  0.363
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