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Kyu-Pil Lee, Ph.D. - Publications

Affiliations: 
2003 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Ip K, Nigam S, Lee KP, Baik KH, Chung GY, MacMillan MF, Ren F, Pearton SJ. Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 2299. DOI: 10.1116/1.1518971  0.513
2002 Lee KP, Pearton SJ, Overberg ME, Abernathy CR, Wilson RG, Chu SNG, Theodoropolou N, Hebard AF, Zavada JM. Magnetic effects of direct ion implantation of Mn and Fe into p-GaN Journal of Electronic Materials. 31: 411-415. DOI: 10.1007/S11664-002-0093-8  0.31
2001 Theodoropoulou N, Lee KP, Overberg ME, Chu SN, Hebard AF, Abernathy CR, Pearton SJ, Wilson RG. Nanoscale magnetic regions formed in GaN implanted with Mn. Journal of Nanoscience and Nanotechnology. 1: 101-6. PMID 12914038 DOI: 10.1166/Jnn.2001.004  0.303
2001 Luo B, Kim J, Mehandru R, Ren F, Lee KP, Pearton S, Polyakov A, Smirnov N, Govorkov A, Kozhukhova E, Osinsky A, Norris P. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I11.17.1  0.347
2001 Monier C, Ren F, Han J, Chang P, Shul RJ, Lee K, Zhang A, Baca AG, Pearton S. Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design Ieee Transactions On Electron Devices. 48: 427-432. DOI: 10.1109/16.906431  0.384
2001 Zhan AP, Dang GT, Ren F, Cho H, Lee K, Pearton SJ, Chyi J, Nee T-, Chuo C-. Comparison of GaN p-i-n and Schottky rectifier performance Ieee Transactions On Electron Devices. 48: 407-411. DOI: 10.1109/16.906427  0.408
2001 Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes Solid-State Electronics. 45: 1837-1842. DOI: 10.1016/S0038-1101(01)00248-9  0.415
2001 Luo B, Ren F, Lee K, Pearton S, Wu C, Johnson D, Sasserath J. Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs Solid-State Electronics. 45: 1625-1638. DOI: 10.1016/S0038-1101(01)00156-3  0.414
2001 Luo B, Ren F, Lee K, Pearton S, Wu C, Kopf R, Johnson D, Sasserah J. Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors Solid-State Electronics. 45: 1613-1624. DOI: 10.1016/S0038-1101(01)00155-1  0.458
2001 Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN Solid-State Electronics. 45: 467-470. DOI: 10.1016/S0038-1101(01)00016-8  0.405
2000 Lee KP, Jung KB, Singh RK, Pearton SJ, Hobbs C, Tobin P. Comparison of plasma chemistries for dry etching of Ta2O5 Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 1169-1172. DOI: 10.1116/1.582319  0.384
1999 Lee K, Cho H, Singh RK, Pearton SJ, Hobbs C, Tobin P. High Density Plasma Etching of Ta2O5-Selectivity to Si and Effect of UV Light Enhancement Mrs Proceedings. 606. DOI: 10.1557/Proc-606-257  0.399
1999 Lee K, Jung KB, Singh RK, Pearton SJ, Hobbs C, Tobin P. Inductively Coupled Plasma Etching of Ta2 O 5 Journal of the Electrochemical Society. 146: 3794-3798. DOI: 10.1149/1.1392552  0.364
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