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Kwang H. Baik, Ph.D. - Publications

Affiliations: 
2004 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering
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124 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Jang S, Jung S, Baik KH. Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer. Sensors (Basel, Switzerland). 20. PMID 32033189 DOI: 10.3390/S20030835  0.367
2020 Baik KH, Jang S. AlGaN/GaN Heterostructure Based Hydrogen Sensor with Temperature Compensation Ecs Journal of Solid State Science and Technology. 9: 45010. DOI: 10.1149/2162-8777/Ab8B72  0.338
2020 Baik KH, Jung S, Cho C, Park K, Ren F, Pearton SJ, Jang S. AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer Sensors and Actuators B-Chemical. 317: 128234. DOI: 10.1016/J.Snb.2020.128234  0.484
2019 Jang S, Jung S, Baik KH. The Dependence of Crystal Plane on Hydrogen Sensing Properties of ZnO Bulk Substrates Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0131904Jss  0.342
2019 Choi Yh, Baik KH, Choi R, Oh J, Kim JH. Photo-enhanced acid chemical etching of high-quality aluminum nitride grown by metal-organic chemical vapor deposition Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0051903Jss  0.311
2019 Baik KH, Lim W, Pearton S, Wang Y, Ren F, Yang J, Jang S. a-Plane GaN for Hydrogen Sensing Applications Ecs Transactions. 28: 89-93. DOI: 10.1149/1.3377104  0.623
2018 Bang K, Chee SS, Kim K, Son M, Jang H, Lee BH, Baik KH, Myoung JM, Ham MH. Effect of ribbon width on electrical transport properties of graphene nanoribbons. Nano Convergence. 5: 7. PMID 29577013 DOI: 10.1186/S40580-018-0139-0  0.328
2018 Jang S, Jung S, Kim J, Ren F, Pearton SJ, Baik KH. Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) Ga2O3Single Crystals Ecs Journal of Solid State Science and Technology. 7: Q3180-Q3182. DOI: 10.1149/2.0261807Jss  0.422
2018 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications Ecs Journal of Solid State Science and Technology. 7: Q3020-Q3024. DOI: 10.1149/2.0041807Jss  0.413
2018 Baik KH, Jung S, Ren F, Pearton SJ, Jang S. Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability Ecs Journal of Solid State Science and Technology. 7: Q3009-Q3013. DOI: 10.1149/2.002107Jss  0.413
2018 Jang S, Jung S, Baik KH. Hydrogen sensing characteristics of Pt Schottky diode on nonpolar m-plane 11¯00 GaN single crystals Thin Solid Films. 660: 646-650. DOI: 10.1016/J.Tsf.2018.04.027  0.366
2018 Bang K, Son GC, Son M, Jun JH, An H, Baik KH, Myoung JM, Ham MH. Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors Journal of Alloys and Compounds. 739: 41-46. DOI: 10.1016/J.Jallcom.2017.12.186  0.387
2018 Jang S, Jung S, Beers K, Yang J, Ren F, Kuramata A, Pearton S, Baik KH. A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3 Journal of Alloys and Compounds. 731: 118-125. DOI: 10.1016/J.Jallcom.2017.09.336  0.5
2018 Baik KH, Kim J, Jang S. Hydrothermal growth and luminescent properties of nonpolar a-plane(112-0)ZnCdO films for light-emitting diodes Applied Surface Science. 435: 592-598. DOI: 10.1016/J.Apsusc.2017.11.038  0.39
2017 Jang S, Lee S, Baik KH. Anisotropic electrical conductivity of surface-roughened semipolar (11\bar{2}2) GaN films by photochemical etching Japanese Journal of Applied Physics. 56: 51001. DOI: 10.7567/Jjap.56.051001  0.361
2017 Baik KH, Lee M, Jang S. Ohmic Contact Properties of Non-Polar (1010) m-Plane Bulk GaN Crystals Science of Advanced Materials. 9: 1983-1986. DOI: 10.1166/Sam.2017.3199  0.319
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing Journal of the Electrochemical Society. 164: B417-B420. DOI: 10.1149/2.0781709Jes  0.37
2017 Baik KH, Lee S, Jang S. Ohmic Contact Properties of Photo-Chemically Etched Nonpolar A-Plane GaN Films Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0011711Jss  0.392
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Detection of ammonia at low concentrations (0.1–2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 042201. DOI: 10.1116/1.4989370  0.465
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer Ieee Electron Device Letters. 38: 657-660. DOI: 10.1109/Led.2017.2681114  0.422
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing Ieee Sensors Journal. 17: 5817-5822. DOI: 10.1109/Jsen.2017.2733343  0.49
2017 Baik KH, Kim J, Jang S. Highly sensitive nonpolar a-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching Sensors and Actuators, B: Chemical. 238: 462-467. DOI: 10.1016/J.Snb.2016.07.091  0.411
2017 Bang K, Jung S, Baik KH, Myoung JM. Growth and characterization of single InGaN quantum well in nonpolar a-plane (112¯0) InGaN/GaN light-emitting diodes Current Applied Physics. 17: 842-846. DOI: 10.1016/J.Cap.2017.03.016  0.371
2016 Kim J, Hwang SM, Seo YG, Song JH, Park KN, Park Jh, Jang S, Baik KH. Carrier Localization in Basal-Plane Stacking Faults in Si-Doped Nonpolar a-Plane (1120) GaN Epilayers Containing Different Defect Densities Journal of Nanoscience and Nanotechnology. 16: 11591-11598. DOI: 10.1166/Jnn.2016.13557  0.314
2016 Jang S, Kim J, Baik KH. Enhanced Hydrogen Detection Sensitivity of Semipolar (112¯2) GaN Schottky Diodes by Surface Wet Etching on Schottky Contact Journal of the Electrochemical Society. 163: B456-B459. DOI: 10.1149/2.1161608Jes  0.374
2016 Jang S, Son P, Kim J, Lee S, Baik KH. Hydrogen sensitive Schottky diode using semipolar (1 1 2¯ 2) AlGaN/GaN heterostructures Sensors and Actuators B: Chemical. 222: 43-47. DOI: 10.1016/J.Snb.2015.08.056  0.406
2016 Jung Y, Jang S, Baik KH, Kim HY, Kim JH. Chemical etching behavior of non-polar GaN sidewalls Journal of Crystal Growth. 456: 108-112. DOI: 10.1016/J.Jcrysgro.2016.08.039  0.415
2016 Kim J, Baik KH, Jang S. Schottky contact on hydrothermally grown a-plane ZnO for hydrogen sensing and UV detection Current Applied Physics. 16: 221-225. DOI: 10.1016/J.Cap.2015.11.014  0.465
2015 Seo YG, Shin SH, Kim DS, Yoon HD, Hwang SM, Baik KH. Structural Anisotropy and Optical Properties of Nonpolar a-Plane GaN Epitaxial Layers. Journal of Nanoscience and Nanotechnology. 15: 7787-90. PMID 26726413 DOI: 10.1166/Jnn.2015.11188  0.401
2015 Seo YG, Kim J, Hwang SM, Jang S, Kim H, Baik KH. Lattice distortion analysis of nonpolar a-plane $$(11\bar 20)$$ GaN films by using a grazing-incidence X-ray diffraction technique Journal of the Korean Physical Society. 66: 607-611. DOI: 10.3938/Jkps.66.607  0.362
2015 Jang S, Son P, Kim J, Lee S, Baik KH. K doping effect on structural and optical properties of ZnO nanorods grown on semipolar (112-2) GaN films using a hydrothermal growth method Optical Materials Express. 5: 1621. DOI: 10.1364/Ome.5.001621  0.358
2015 Son P, Baik KH, Jang S. Investigation on Hydrothermal Growth of a-Plane ZnO Using Epitaxial Lateral Overgrowth Ecs Solid State Letters. 4. DOI: 10.1149/2.0011503Ssl  0.312
2014 Jung Y, Baik KH, Mastro MA, Hite JK, Eddy CR, Kim J. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films. Physical Chemistry Chemical Physics : Pccp. 16: 15780-3. PMID 24971494 DOI: 10.1039/C4Cp02303J  0.392
2014 Kim JH, Hwang SM, Baik KH, Park JH. Effect of basal-plane stacking faults on X-ray diffraction of non-polar (1120) a-plane GaN films grown on (1102) r-plane sapphire substrates Journal of Semiconductor Technology and Science. 14: 557-565. DOI: 10.5573/Jsts.2014.14.5.557  0.369
2014 Kim H, Baik KH, Ren F, Pearton SJ, Jang S. (Invited) Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes Ecs Transactions. 61: 353-357. DOI: 10.1149/06104.0353ECST  0.303
2014 Baik KH, Kim H, Jang S. Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film Thin Solid Films. 569: 1-5. DOI: 10.1016/J.Tsf.2014.08.009  0.364
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. Optics Express. 21: 29025-30. PMID 24514418 DOI: 10.1364/Oe.21.029025  0.414
2013 Park H, Baik KH, Kim J, Ren F, Pearton SJ. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics Express. 21: 12908-13. PMID 23736510 DOI: 10.1364/Oe.21.012908  0.513
2013 Kim H, Baik KH, Kim J, Jang S. Gold Nanonetworks on a Flexible Polyimide Substrate Korean Journal of Chemical Engineering. 51: 292-295. DOI: 10.9713/Kcer.2013.51.2.292  0.314
2013 Son J, Miao C, Honda Y, Yamaguchi M, Amano H, Seo YG, Hwang S, Baik KH. Effects of Nano- and Microscale SiO2Masks on the Growth ofa-Plane GaN Layers onr-Plane Sapphire Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc04  0.395
2013 Kim J, Seo YG, Hwang S, Jang S, Baik KH. Analysis of the modified williamson-hall plot of non-polar a-plane GaN films Journal of the Korean Physical Society. 62: 601-605. DOI: 10.3938/Jkps.62.601  0.383
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes Optics Express. 21: 29025-29030. DOI: 10.1364/OE.21.029025  0.313
2013 Kim JH, Hwang SM, Seo YG, Baik KH, Park Jh. Structural and electrical anisotropies of Si-doped a-plane (11–20) GaN films with different SiNx interlayers Semiconductor Science and Technology. 28: 85007. DOI: 10.1088/0268-1242/28/8/085007  0.433
2013 Jang S, Kim H, Kim DS, Hwang SM, Kim JH, Baik KH. Investigation of carrier transport properties in semipolar (112¯2) GaN films with low defect density Applied Physics Letters. 103: 162103. DOI: 10.1063/1.4825171  0.375
2013 Baik KH, Kim H, Kim JH, Jung S, Jang S. Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN Applied Physics Letters. 103: 91107. DOI: 10.1063/1.4819847  0.433
2013 Kim BJ, Yang G, Park MJ, Kwak JS, Baik KH, Kim D, Kim J. Three-dimensional graphene foam-based transparent conductive electrodes in GaN-based blue light-emitting diodes Applied Physics Letters. 102: 161902. DOI: 10.1063/1.4801763  0.315
2013 Son JS, Honda Y, Yamaguchi M, Amano H, Baik KH, Seo YG, Hwang SM. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates Thin Solid Films. 546: 108-113. DOI: 10.1016/J.Tsf.2013.02.048  0.404
2012 Kim DS, Kim DY, Seo YG, Kim JH, Hwang S, Baik KH. Thermal degradation of Ohmic contacts on semipolar (11-22) GaN films grown on m-plane (1-100) sapphire substrates Journal of the Korean Physical Society. 61: 1060-1064. DOI: 10.3938/Jkps.61.1060  0.445
2012 Kim JH, Park JH, Hwang SM, Baik KH. Effect of r-plane (1–102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11–20) GaN Journal of the Korean Physical Society. 60: 1649-1655. DOI: 10.3938/Jkps.60.1649  0.378
2012 Chu BH, Chin BD, Baik KH, Stephen JP, Ren F, Jang S. Improved organic light emitting diodes using cryogenic lif/al deposition Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.09Mh04  0.39
2012 Kim JH, Hwang SM, Seo YG, Kim DS, Baik KH, Park Jh. Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides Proceedings of Spie. 8484. DOI: 10.1117/12.929523  0.371
2012 Jung S, Chang Y, Bang K, Kim H, Choi Y, Hwang S, Baik KH. High brightness nonpolar a-plane (11–20) GaN light-emitting diodes Semiconductor Science and Technology. 27: 24017. DOI: 10.1088/0268-1242/27/2/024017  0.441
2012 Polyakov AY, Jang L, Jo D, Lee I, Smirnov NB, Govorkov AV, Kozhukhova EA, Baik KH, Hwang S. Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures Journal of Applied Physics. 111: 33103. DOI: 10.1063/1.3680877  0.345
2012 Song H, Kim EK, Baik KH, Hwang S, Jang YW, Lee JY. Characterization of deep levels in a-plane GaN epi-layers grown using various growth techniques Journal of Crystal Growth. 340: 23-27. DOI: 10.1016/J.Jcrysgro.2011.11.042  0.357
2011 Hwang SM, Song H, Seo YG, Son JS, Kim J, Baik KH. Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates. Optics Express. 19: 23036-41. PMID 22109183 DOI: 10.1364/Oe.19.023036  0.386
2011 Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates. Optics Express. 19: 12919-24. PMID 21747444 DOI: 10.1364/Oe.19.012919  0.383
2011 Sari E, Nizamoglu S, Choi JH, Lee SJ, Baik KH, Lee IH, Baek JH, Hwang SM, Demir HV. Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures. Optics Express. 19: 5442-50. PMID 21445183 DOI: 10.1364/Oe.19.005442  0.309
2011 Jung Y, Ahn J, Baik KH, Kim D, Pearton SJ, Ren F, Kim J. Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions Journal of the Electrochemical Society. 159: H117-H120. DOI: 10.1149/2.039202Jes  0.468
2011 Baik KH, Song HY, Hwang SM, Jung Y, Ahn J, Kim JH. Etched Surface Morphology of Heteroepitaxial Nonpolar ( 112̄0 ) and Semipolar ( 112 ¯ 2 ) GaN Films by Photoenhanced Chemical Wet Etching Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3544916  0.376
2011 Kim JH, Park Jh, Baik KH, Hwang SM. Structural and optical properties of a-plane GaN on r-plane sapphire with titanium oxide nanoparticles coated by spin coating method Proceedings of Spie. 8123: 812314. DOI: 10.1117/12.893321  0.343
2011 Polyakov AY, Jang LW, Smirnov NB, Govorkov AV, Kozhukhova EA, Yugova TG, Reznik VY, Pearton SJ, Baik KH, Hwang SM, Jung S, Lee IH. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process Journal of Applied Physics. 110: 93709. DOI: 10.1063/1.3658026  0.508
2011 Son J, Baik KH, Seo YG, Song H, Kim JH, Hwang S, Kim T. Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD Journal of Crystal Growth. 326: 98-102. DOI: 10.1016/J.Jcrysgro.2011.01.061  0.392
2010 Jung Y, Kim J, Jang S, Baik KH, Seo YG, Hwang SM. Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching. Optics Express. 18: 9728-32. PMID 20588822 DOI: 10.1364/Oe.18.009728  0.385
2010 Baik KH, Park JH, Lee SH, Song H, Hwang SM, Lee S, Jhin J, Tak J, Kim JH. Device performance of nonpolar a-plane (11-20) InGaN/GaN Light-emitting diodes on r-plane sapphire substrates Journal of the Korean Physical Society. 56: 1140-1143. DOI: 10.3938/Jkps.56.1140  0.33
2010 Jung Y, Baik KH, Ren F, Pearton SJ, Kim J. Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates Journal of the Electrochemical Society. 157: H676. DOI: 10.1149/1.3384713  0.482
2010 Baik KH, Seo YG, Hong S, Lee S, Kim J, Son J, Hwang S. Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ( $11\bar{2}0$ ) GaN Light-Emitting Diodes on Sapphire Substrate Ieee Photonics Technology Letters. 22: 595-597. DOI: 10.1109/Lpt.2010.2042950  0.365
2010 Baik KH, Seo YG, Kim J, Hwang S, Lim W, Chang CY, Pearton SJ, Ren F, Jang S. Ohmic contact properties of non-polara-plane GaN films onr-plane sapphire substrates Journal of Physics D: Applied Physics. 43: 295102. DOI: 10.1088/0022-3727/43/29/295102  0.698
2010 Song H, Suh J, Kim EK, Baik KH, Hwang S. Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer Journal of Crystal Growth. 312: 3122-3126. DOI: 10.1016/J.Jcrysgro.2010.08.004  0.372
2010 Seo YG, Baik KH, Song K, Lee S, Yoon H, Park J, Oh K, Hwang S. Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates Current Applied Physics. 10: 1407-1410. DOI: 10.1016/J.Cap.2010.05.003  0.403
2010 Wang Y, Ren F, Lim W, Pearton S, Baik KH, Hwang S, Gon Seo Y, Jang S. Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes Current Applied Physics. 10: 1029-1032. DOI: 10.1016/J.Cap.2009.12.034  0.69
2009 Hwang SM, Seo YG, Baik KH, Cho IS, Baek JH, Jung S, Kim TG, Cho M. Demonstration of nonpolar a -plane InGaN/GaN light emitting diode on r -plane sapphire substrate Applied Physics Letters. 95. DOI: 10.1063/1.3206666  0.422
2009 Baik KH, Pearton SJ. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication Applied Surface Science. 255: 5948-5951. DOI: 10.1016/J.Apsusc.2009.01.041  0.395
2007 Kim H, Baik KH, Cho J, Lee JW, Yoon S, Kim H, Lee S, Sone C, Park Y, Seong T. High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes Ieee Photonics Technology Letters. 19: 336-338. DOI: 10.1109/Lpt.2007.891640  0.337
2007 Kim H, Kim KK, Choi KK, Kim H, Song JO, Cho J, Baik KH, Sone C, Park Y, Seong TY. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry Applied Physics Letters. 91: 23510. DOI: 10.1063/1.2756139  0.335
2007 Bang J, Kim K, Mok S, Ren F, Pearton SJ, Baik KH, Kim SH, Kim J, Shin K. Simple fabrication of nanoporous films on ZnO for enhanced light emission Physica Status Solidi (a) Applications and Materials Science. 204: 3417-3422. DOI: 10.1002/Pssa.200723127  0.464
2006 Kim J, Baik K, Park C, Cho S, Pearton SJ, Ren F. Measurement of external stress on bulk GaN Physica Status Solidi (a). 203: 2393-2396. DOI: 10.1002/Pssa.200622165  0.406
2005 Yang HS, Han SY, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Dabiran AM, Chow PP, Chernyak L, Steiner T, Kao CJ, et al. Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7296-7300. DOI: 10.1143/Jjap.44.7296  0.479
2005 Han SY, Yang HS, Baik KH, Pearton SJ, Ren F. Role of Ion Energy and Flux on Inductively Coupled Plasma Etch Damage in InGaN/GaN Multi Quantum Well Light Emitting Diodes Japanese Journal of Applied Physics. 44: 7234-7237. DOI: 10.1143/Jjap.44.7234  0.454
2005 Kang BS, Ren F, Jeong BS, Kwon YW, Baik KH, Norton DP, Pearton SJ. Use of 370 nm UV light for selective-area fibroblast cell growth Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 57. DOI: 10.1116/1.1835314  0.418
2005 Kang BS, Kim J, Jang S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1952568  0.32
2005 Yang HS, Han SY, Baik KH, Pearton SJ, Ren F. Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes Applied Physics Letters. 86: 102104. DOI: 10.1063/1.1882749  0.44
2005 Kang BS, Kim S, Kim J, Mehandru R, Ren F, Baik K, Pearton SJ, Gila BP, Abernathy CR, Pan CC, Chen GT, Chyi JI, Chandrasekaran V, Sheplak M, Nishida T, et al. AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing Physica Status Solidi C: Conferences. 2: 2684-2687. DOI: 10.1002/Pssc.200461269  0.345
2005 Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Baik KH, Gila BP, Abernathy CR, et al. Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors Physica Status Solidi C: Conferences. 2: 2672-2675. DOI: 10.1002/Pssc.200461268  0.312
2004 Kim J, Baik KH, Kang BS, Kim S, Irokawa Y, Ren F, Pearton SJ, Chung GY. 4H-SiC Schottky Diode Array with 430 A Forward Current Electrochemical and Solid-State Letters. 7: G125. DOI: 10.1149/1.1697908  0.363
2004 Polyakov AY, Smirnov NB, Govorkov AV, Baik KH, Pearton SJ, Zavada JM. Changes in electrical and optical properties of p-AlGaN due to proton implantation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2291. DOI: 10.1116/1.1781187  0.403
2004 Polyakov AY, Smirnov NB, Govorkov AV, Baik KH, Pearton SJ, Luo B, Ren F, Zavada JM. Effects of hydrogen plasma treatment on electrical properties of p-AlGaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 771. DOI: 10.1116/1.1689302  0.44
2004 Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F. Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 171. DOI: 10.1116/1.1641060  0.529
2004 Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NV, Shlensky AA, Baik KH, Pearton SJ, Luo B, Ren F, Zavada JM. Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 77. DOI: 10.1116/1.1640395  0.488
2004 Kang BS, Kim S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes Applied Physics Letters. 85: 2962-2964. DOI: 10.1063/1.1800282  0.42
2004 Ip K, Gila BP, Onstine AH, Lambers ES, Heo YW, Baik KH, Norton DP, Pearton SJ, Kim S, LaRoche JR, Ren F. Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning Applied Physics Letters. 84: 5133-5135. DOI: 10.1063/1.1764940  0.735
2004 Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Kim S, LaRoche JR, Ren F. Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO Applied Physics Letters. 84: 2835-2837. DOI: 10.1063/1.1705726  0.73
2004 Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F. Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO Applied Physics Letters. 84: 544-546. DOI: 10.1063/1.1644318  0.735
2004 Irokawa Y, Luo B, Kang BS, Kim JH, LaRoche JR, Ren F, Baik KH, Pearton SJ, Pan CC, Chen GT, Chyi JI, Park SS, Park YJ. 2.6 A, 0.69 MW cm -2 single-chip bulk GaN p-i-n rectifier Solid-State Electronics. 48: 359-361. DOI: 10.1016/S0038-1101(03)00323-X  0.403
2004 Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ. RF performance of HVPE-grown AlGaN/GaN HEMTs Solid-State Electronics. 48: 179-182. DOI: 10.1016/S0038-1101(03)00107-2  0.364
2004 Irokawa Y, Kim J, Ren F, Baik K, Gila B, Abernathy C, Pearton S, Pan C, Chen G, Chyi J, Park S. Si+ ion implanted MPS bulk GaN diodes Solid-State Electronics. 48: 827-830. DOI: 10.1016/J.Sse.2003.09.018  0.406
2004 Ip K, Gila B, Onstine A, Lambers E, Heo Y, Baik K, Norton D, Pearton S, Kim S, LaRoche J, Ren F. Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO Applied Surface Science. 236: 387-393. DOI: 10.1016/J.Apsusc.2004.05.013  0.724
2004 Irokawa Y, Kim J, Ren F, Baik KH, Gila BP, Abernathy CR, Pearton SJ, Pan C-, Chen G-, Chyi J-. Lateral schottky GaN rectifiers formed by Si+ ion implantation Journal of Electronic Materials. 33: 426-430. DOI: 10.1007/S11664-004-0196-5  0.395
2004 Khanna R, Ip K, Allums KK, Baik K, Abernathy CR, Pearton SJ, Heo YW, Norton DP, Ren F, Dwivedi R, Fogarty TN, Wilkins R. Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes Physica Status Solidi (a). 201: R79-R82. DOI: 10.1002/Pssa.200409059  0.675
2003 Luo B, Ren F, Mastro MA, Tsvetkov D, Pechnikov A, Soukhoveev V, Dmitriev V, Baik KH, Pearton SJ. HVPE-GROWN AlGaN/GaN HEMTs Mrs Proceedings. 764. DOI: 10.1557/PROC-764-C2.3  0.417
2003 Mastro M, Tsvetkov D, Pechnikov A, Soukhoveev V, Gainer G, Usikov A, Dmitriev V, Luo B, Ren F, Baik K, Pearton S. AlGaN/GaN Structures Grown by HVPE: Growth and Characterization Mrs Proceedings. 764. DOI: 10.1557/Proc-764-C2.2  0.37
2003 Overberg ME, Baik KH, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Hydrogenation Effects on Magnetic Properties of GaMnP Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1612725  0.446
2003 Ip K, Nigam S, Baik KH, Ren F, Chung GY, Gila BP, Pearton SJ. Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing Journal of the Electrochemical Society. 150: G293. DOI: 10.1149/1.1560953  0.717
2003 Ip K, Baik KH, Heo YW, Norton DP, Pearton SJ, LaRoche JR, Luo B, Ren F, Zavada JM. Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 2378. DOI: 10.1116/1.1621651  0.52
2003 Baik KH, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Effects of hydrogen incorporation in GaMnN Applied Physics Letters. 83: 5458-5460. DOI: 10.1063/1.1637151  0.467
2003 Irokawa Y, Kim J, Ren F, Baik KH, Gila BP, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J. Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes Applied Physics Letters. 83: 4987-4989. DOI: 10.1063/1.1634382  0.421
2003 Baik KH, Irokawa Y, Kim J, LaRoche JR, Ren F, Park SS, Park YJ, Pearton SJ. 160-A bulk GaN Schottky diode array Applied Physics Letters. 83: 3192-3194. DOI: 10.1063/1.1618022  0.403
2003 Irokawa Y, Luo B, Kim JH, LaRoche JR, Ren F, Baik KH, Pearton SJ, Pan CC, Chen GT, Chyi JI, Park SS, Park YJ. Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers Applied Physics Letters. 83: 2271-2273. DOI: 10.1063/1.1611624  0.414
2003 Polyakov AY, Smirnov NB, Govorkov AV, Baik KH, Pearton SJ, Luo B, Ren F, Zavada JM. Hydrogen plasma passivation effects on properties of p-GaN Journal of Applied Physics. 94: 3960-3965. DOI: 10.1063/1.1603343  0.459
2003 Baik K, Irokawa Y, Ren F, Pearton S, Park S, Park Y. Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers Solid-State Electronics. 47: 1533-1538. DOI: 10.1016/S0038-1101(03)00071-6  0.412
2003 Mastro M, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik K, Pearton S. Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors Solid-State Electronics. 47: 1075-1079. DOI: 10.1016/S0038-1101(02)00473-2  0.404
2003 Baik K, Irokawa Y, Ren F, Pearton S, Park S, Park Y. Design of junction termination structures for GaN Schottky power rectifiers Solid-State Electronics. 47: 975-979. DOI: 10.1016/S0038-1101(02)00464-1  0.339
2002 Ip K, Nigam S, Lee KP, Baik KH, Chung GY, MacMillan MF, Ren F, Pearton SJ. Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 2299. DOI: 10.1116/1.1518971  0.672
2002 Baik KH, Irokawa Y, Ren F, Pearton SJ, Park SS, Lee SK. Edge termination design and simulation for bulk GaN rectifiers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 2169. DOI: 10.1116/1.1511210  0.442
2002 Ip K, Baik KH, Overberg ME, Lambers ES, Heo YW, Norton DP, Pearton SJ, Ren F, Zavada JM. Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO Applied Physics Letters. 81: 3546-3548. DOI: 10.1063/1.1519095  0.688
2002 Norasetthekul S, Park P, Baik K, Lee K, Shin J, Jeong B, Shishodia V, Norton D, Pearton S. Etch characteristics of HfO2 films on Si substrates Applied Surface Science. 187: 75-81. DOI: 10.1016/S0169-4332(01)00792-9  0.383
2002 Ip K, Baik K, Luo B, Ren F, Pearton S, Park S, Park Y, Zhang A. High current bulk GaN Schottky rectifiers Solid-State Electronics. 46: 2169-2172. DOI: 10.1016/S0038-1101(02)00187-9  0.383
2002 Baik K, Luo B, Kim J, Pearton S, Ren F. Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation Solid-State Electronics. 46: 1459-1462. DOI: 10.1016/S0038-1101(02)00081-3  0.39
2002 Luo B, Baik K, Ren F, Pearton S, Mackenzie K. Comparison of the effects of deuterated SiNX films on GaN and GaAs rectifiers Solid-State Electronics. 46: 1453-1457. DOI: 10.1016/S0038-1101(02)00080-1  0.434
2002 Baik K, Luo B, Pearton S, Ren F. Influence of SiO2 PECVD layers on p-GaN rectifiers Solid-State Electronics. 46: 803-806. DOI: 10.1016/S0038-1101(02)00002-3  0.423
2001 Luo B, Johnson JW, Ren F, Baik KH, Pearton SJ. Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers Journal of Applied Physics. 90: 4800-4804. DOI: 10.1063/1.1410323  0.513
2001 Park P, Norasetthekul S, Lee K, Baik K, Gila B, Shin J, Abernathy C, Ren F, Lambers E, Pearton S. Wet and dry etching of Sc2O3 Applied Surface Science. 185: 52-59. DOI: 10.1016/S0169-4332(01)00593-1  0.383
2001 Norasetthekul S, Park P, Baik K, Lee K, Shin J, Jeong B, Shishodia V, Lambers E, Norton D, Pearton S. Dry etch chemistries for TiO2 thin films Applied Surface Science. 185: 27-33. DOI: 10.1016/S0169-4332(01)00562-1  0.342
2001 Baik K, Park P, Gila B, Shin J, Abernathy C, Norasetthekul S, Luo B, Ren F, Lambers E, Pearton S. Comparison of plasma etch chemistries for MgO Applied Surface Science. 183: 26-32. DOI: 10.1016/S0169-4332(01)00542-6  0.393
2001 Baik K, Park P, Luo B, Lee K, Shin J, Abernathy C, Hobson W, Pearton S, Ren F. Effect of PECVD of SiO2 passivation layers on GaN and InGaP Solid-State Electronics. 45: 2093-2096. DOI: 10.1016/S0038-1101(01)00205-2  0.456
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