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Jihyun Kim - Publications

Affiliations: 
2004 Chemical Engineering University of Florida, Gainesville, Gainesville, FL, United States 
 2004-2006 U.S. Naval Research Laboratory, Washington, DC, United States 
 2006- Chemical Engineering Korea University, Seoul, South Korea 
Website:
https://www.cpcl.korea.ac.kr/
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Year Citation  Score
2020 Lee G, Oh S, Kim J, Kim J. Ambipolar charge transport in two-dimensional WS metal-insulator-semiconductor and metal-insulator-semiconductor field-effect transistors. Acs Applied Materials & Interfaces. PMID 32337986 DOI: 10.1021/Acsami.0C04297  0.345
2020 Kim M, Kim Y, Kim J, Baik KH, Jang S. BCl3-Based Dry Etching of Exfoliated (100) ß-Ga2O3 Flakes Ecs Journal of Solid State Science and Technology. 9: 75001. DOI: 10.1149/2162-8777/Abae14  0.566
2020 Carey PH, Ren F, Bae J, Kim J, Pearton SJ. Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 35008. DOI: 10.1149/2162-8777/Ab8019  0.401
2020 Carey PH, Ren F, Bae J, Kim J, Pearton SJ. Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 25003. DOI: 10.1149/2162-8777/Ab71F0  0.43
2020 Yang S, Lee G, Kim J, Yang S, Lee C, Kim J. An in-plane WSe2 p–n homojunction two-dimensional diode by laser-induced doping Journal of Materials Chemistry C. 8: 8393-8398. DOI: 10.1039/D0Tc01790F  0.308
2020 Bae J, Kim HW, Kang IH, Kim J. Dual-field plated β-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 v Journal of Materials Chemistry C. 8: 2687-2692. DOI: 10.1039/C9Tc05161A  0.316
2020 Kim J, Kim H, Lee D, An S, Kim J. BEOL-compatible synthesis of multi-layer graphene by carbon ion implantation on cobalt thin films Applied Surface Science. 524: 146537. DOI: 10.1016/J.Apsusc.2020.146537  0.301
2020 Choi Y, Choi R, Kim J. Selective electrochemical etching of epitaxial aluminum nitride thin film Applied Surface Science. 509: 145279. DOI: 10.1016/J.Apsusc.2020.145279  0.334
2019 Kwon J, Shin Y, Kwon H, Lee JY, Park H, Watanabe K, Taniguchi T, Kim J, Lee CH, Im S, Lee GH. All-2D ReS transistors with split gates for logic circuitry. Scientific Reports. 9: 10354. PMID 31316081 DOI: 10.1038/S41598-019-46730-7  0.325
2019 Kim H, Park H, Lee G, Kim J. Intimate ohmic contact to two-dimensional WSe2 via thermal alloying. Nanotechnology. PMID 31290408 DOI: 10.1088/1361-6528/Ab30B5  0.3
2019 Ren F, Singh R, Pearton S, Kim J, Polyakov A, Ringel S, Jia R. Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices Ecs Journal of Solid State Science and Technology. 8: Y3-Y3. DOI: 10.1149/2.0431907Jss  0.403
2019 Xian M, Fares C, Bae J, Kim J, Ren F, Pearton SJ. Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0231912Jss  0.371
2019 Yang J, Koller GJ, Fares C, Ren F, Pearton SJ, Bae J, Kim J, Smith DJ. 60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0091907Jss  0.448
2019 Lee G, Pearton SJ, Ren F, Kim J. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) Advanced Electronic Materials. 5: 1970015. DOI: 10.1002/Aelm.201970015  0.427
2018 Kim J, Mastro MA, Tadjer MJ, Kim J. Heterostructure WSe-GaO junction field-effect transistor for low-dimensional high-power electronics. Acs Applied Materials & Interfaces. PMID 30092634 DOI: 10.1021/Acsami.8B07030  0.357
2018 Lee G, Pearton SJ, Ren F, Kim J. Two-dimensionally layered p-black phosphorus/n-MoS/p-black phosphorus Heterojunctions. Acs Applied Materials & Interfaces. PMID 29485269 DOI: 10.1021/Acsami.7B19334  0.373
2017 Yang G, Jang S, Ren F, Pearton SJ, Kim J. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. Acs Applied Materials & Interfaces. PMID 29083157 DOI: 10.1021/Acsami.7B13881  0.607
2017 Kim J, Mastro MA, Tadjer MJ, Kim J. Quasi-two-dimensional h-BN/β-Ga2O3 heterostructure metal-insulator-semiconductor field-effect transistor. Acs Applied Materials & Interfaces. PMID 28560867 DOI: 10.1021/Acsami.7B04374  0.331
2016 Yang G, Kim HY, Jang S, Kim J. Transfer-free Growth of Multi-layer Graphene using Self-assembled Monolayers. Acs Applied Materials & Interfaces. PMID 27631896 DOI: 10.1021/Acsami.6B08974  0.553
2016 Kim J, Oh S, Mastro MA, Kim J. Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics. Physical Chemistry Chemical Physics : Pccp. PMID 27230724 DOI: 10.1039/C6Cp01987K  0.335
2016 Ahn S, Ren F, Kim J, Oh S, Kim J, Mastro MA, Pearton SJ. Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors Applied Physics Letters. 109: 062102. DOI: 10.1063/1.4960651  0.471
2016 Oh S, Kim J, Ren F, Pearton SJ, Kim J. Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity Journal of Materials Chemistry C. 4: 9245-9250. DOI: 10.1039/C6Tc02467J  0.416
2015 Seo YG, Kim J, Hwang SM, Jang S, Kim H, Baik KH. Lattice distortion analysis of nonpolar a-plane $$(11\bar 20)$$ GaN films by using a grazing-incidence X-ray diffraction technique Journal of the Korean Physical Society. 66: 607-611. DOI: 10.3938/Jkps.66.607  0.574
2015 Kim J, Kim B, Kim J, Lee S, Park Q. Broadband low reflectance stepped-cone nanostructures by nanosphere lithography Journal of Vacuum Science and Technology. 33: 21207. DOI: 10.1116/1.4913194  0.303
2015 Kim J, Lee G, Kim J. Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation Applied Physics Letters. 107: 33104. DOI: 10.1063/1.4926605  0.308
2014 Yang G, Jung Y, Cuervo CV, Ren F, Pearton SJ, Kim J. GaN-based light-emitting diodes on graphene-coated flexible substrates. Optics Express. 22: A812-7. PMID 24922388 DOI: 10.1364/Oe.22.00A812  0.361
2014 Oh S, Park H, Jung Y, Kim JH, Kim J, Oh MS. Selective deposition of graphene sheets on a flexible substrate by a nonuniform electric field Journal of Vacuum Science & Technology B. 32: 20602. DOI: 10.1116/1.4862536  0.315
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. Optics Express. 21: 29025-30. PMID 24514418 DOI: 10.1364/Oe.21.029025  0.438
2013 Park H, Baik KH, Kim J, Ren F, Pearton SJ. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics Express. 21: 12908-13. PMID 23736510 DOI: 10.1364/Oe.21.012908  0.391
2013 Yang G, Lee C, Kim J, Ren F, Pearton SJ. Flexible graphene-based chemical sensors on paper substrates. Physical Chemistry Chemical Physics : Pccp. 15: 1798-801. PMID 23262787 DOI: 10.1039/C2Cp43717A  0.433
2013 Kim H, Baik KH, Kim J, Jang S. Gold Nanonetworks on a Flexible Polyimide Substrate Korean Journal of Chemical Engineering. 51: 292-295. DOI: 10.9713/Kcer.2013.51.2.292  0.576
2013 Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ, Kim H, Kim J, Kravchenko II. Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 042202. DOI: 10.1116/1.4813785  0.443
2013 Xi Y, Liu L, Ren F, Pearton SJ, Kim J, Dabiran A, Chow PP. Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032203. DOI: 10.1116/1.4803743  0.456
2013 Pearton SJ, Deist R, Ren F, Liu L, Polyakov AY, Kim J. Review of radiation damage in GaN-based materials and devices Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 050801. DOI: 10.1116/1.4799504  0.447
2013 Xi Y, Liu L, Hwang Y, Phillips O, Ren F, Pearton SJ, Kim J, Hsu C, Lo C, Wayne Johnson J. Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032202. DOI: 10.1116/1.4798612  0.41
2013 Kim BJ, Yang G, Park MJ, Kwak JS, Baik KH, Kim D, Kim J. Three-dimensional graphene foam-based transparent conductive electrodes in GaN-based blue light-emitting diodes Applied Physics Letters. 102: 161902. DOI: 10.1063/1.4801763  0.329
2013 Yang G, Jung Y, Chun S, Kim D, Kim J. Catalytic growth of CdTe nanowires by closed space sublimation method Thin Solid Films. 546: 375-378. DOI: 10.1016/J.Tsf.2013.03.068  0.301
2013 Kim HY, Shin YJ, Kim JG, Harima H, Kim J, Bahng W. Etch pit investigation of free electron concentration controlled 4H-SiC Journal of Crystal Growth. 369: 38-42. DOI: 10.1016/J.Jcrysgro.2013.01.047  0.311
2012 Park H, Kim BJ, Kim J. Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields. Optics Express. 20: 25249-25254. PMID 23187341 DOI: 10.1364/Oe.20.025249  0.332
2012 Wang X, Lo CF, Liu L, Cuervo CV, Fan R, Pearton SJ, Gila B, Johnson MR, Zhou L, Smith DJ, Kim J, Laboutin O, Cao Y, Johnson JW. 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4751278  0.325
2012 Jung Y, Hyun Kim S, Kim J, Wang X, Ren F, Jin Choi K, Pearton SJ. GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 30: 050605. DOI: 10.1116/1.4739769  0.448
2012 Chen CW, Ren F, Chi G, Hung SC, Huang YP, Kim J, Kravchenko I, Pearton SJ. Effects of semiconductor processing chemicals on conductivity of graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 040602. DOI: 10.1116/1.4732517  0.436
2012 Kim H, Lee C, Kim J, Ren F, Pearton SJ. Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 030602. DOI: 10.1116/1.3701711  0.435
2012 Lo C, Liu L, Kang TS, Ren F, Schwarz C, Flitsiyan E, Chernyak L, Kim H, Kim J, Pil Yun S, Laboutin O, Cao Y, Johnson JW, Pearton SJ. Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 031202. DOI: 10.1116/1.3698402  0.441
2012 Kim H, Kim J, Liu L, Lo C, Ren F, Pearton SJ. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 012202. DOI: 10.1116/1.3676034  0.441
2012 Lo CF, Liu L, Chu BH, Ren F, Pearton SJ, Doré S, Hsu CH, Kim J, Dabiran AM, Chow PP. Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672010  0.441
2012 Jung Y, Wang X, Kim J, Hyun Kim S, Ren F, Pearton SJ. GaN-based light-emitting diodes on origami substrates Applied Physics Letters. 100. DOI: 10.1063/1.4726123  0.45
2012 Jung Y, Wang X, Kim SH, Ren F, Kim J, Pearton SJ. Back Cover: A facile method for flexible GaN-based light-emitting diodes (Phys. Status Solidi RRL 11/2012) Physica Status Solidi (Rrl) - Rapid Research Letters. 6. DOI: 10.1002/Pssr.201290026  0.418
2012 Jung Y, Wang X, Kim SH, Ren F, Kim J, Pearton SJ. A facile method for flexible GaN-based light-emitting diodes Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 421-423. DOI: 10.1002/Pssr.201206374  0.436
2011 Kim H, Kim J. 고에너지 양성자에 의해 결함을 증가시킨 그래핀 소자의 전기적 특성 변화 연구 Korean Journal of Chemical Engineering. 49: 297-300. DOI: 10.9713/Kcer.2011.49.3.297  0.314
2011 Kim BJ, Jung Y, Mastro MA, Hite J, Nepal N, Eddy CR, Kim J. Emission enhancement from nonpolar a-plane III-nitride nanopillar Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3545696  0.334
2011 Mastro MA, Kim HY, Ahn J, Simpkins B, Pehrsson P, Kim J, Hite JK, Eddy CR. Polarization and space-charge-limited current in III-nitride heterostructure nanowires Ieee Transactions On Electron Devices. 58: 3401-3406. DOI: 10.1109/Ted.2011.2162108  0.301
2011 Kim BJ, Lee C, Jung Y, Hyeon Baik K, Mastro MA, Hite JK, Eddy CR, Kim J. Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3644496  0.34
2011 Kim HY, Mastro MA, Hite J, Eddy CR, Kim J. Photo-enhanced chemical etched GaN LED on silicon substrate Journal of Crystal Growth. 326: 58-61. DOI: 10.1016/J.Jcrysgro.2011.01.051  0.321
2010 Ko G, Jung Y, Kim J. Peak channel temperature of graphene-based transistors. Journal of Nanoscience and Nanotechnology. 10: 4889-92. PMID 21125824 DOI: 10.1166/Jnn.2010.2414  0.355
2010 Jung Y, Kim J, Jang S, Baik KH, Seo YG, Hwang SM. Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching. Optics Express. 18: 9728-32. PMID 20588822 DOI: 10.1364/Oe.18.009728  0.599
2010 Jung Y, Baik KH, Ren F, Pearton SJ, Kim J. Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates Journal of the Electrochemical Society. 157: H676. DOI: 10.1149/1.3384713  0.458
2010 Kim BJ, Bang J, Kim SH, Kim J. Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography Journal of the Electrochemical Society. 157: H449-H451. DOI: 10.1149/1.3299327  0.301
2010 Ko G, Kim H, Ren F, Pearton SJ, Kim J. Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene Electrochemical and Solid-State Letters. 13: K32. DOI: 10.1149/1.3290777  0.457
2010 Ahn J, Mastro MA, Hite J, Eddy CR, Kim J. Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction Applied Physics Letters. 96. DOI: 10.1063/1.3377005  0.317
2010 Jung Y, Mastro MA, Hite J, Eddy CR, Kim J. Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN Thin Solid Films. 518: 5810-5812. DOI: 10.1016/J.Tsf.2010.05.113  0.301
2010 Garces NY, Feigelson BN, Freitas JA, Kim J, Myers-Ward R, Glaser ER. Characterization of bulk GaN crystals grown from solution at near atmospheric pressure Journal of Crystal Growth. 312: 2558-2563. DOI: 10.1016/J.Jcrysgro.2010.04.012  0.303
2009 Kim H, Ren F, Pearton SJ, Kim J. Self-Annealing in Neutron-Irradiated AlGaN∕GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 12: H173. DOI: 10.1149/1.3082498  0.464
2008 Kim BJ, Mastro MA, Jung H, Kim HY, Kim SH, Holm RT, Hite J, Eddy CR, Bang J, Kim J. Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications Thin Solid Films. 516: 7744-7747. DOI: 10.1016/J.Tsf.2008.05.046  0.326
2007 Lee CW, Choi H, Oh MK, Ahn DJ, Kim J, Kim J-, Ren F, Pearton SJ. ZnO-Based Cyclodextrin Sensor Using Immobilized Polydiacetylene Vesicles Electrochemical and Solid State Letters. 10. DOI: 10.1149/1.2364306  0.407
2006 Kim J, Freitas JA, Mittereder J, Fitch R, Kang BS, Pearton SJ, Ren F. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-raman technique Solid-State Electronics. 50: 408-411. DOI: 10.1016/J.Sse.2005.11.009  0.419
2006 Choi H, Lee CW, Lee GS, Oh MK, Ahn DJ, Kim J, Kim J, Ren F, Pearton SJ. Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors Physica Status Solidi (a). 203: R79-R81. DOI: 10.1002/Pssa.200622290  0.416
2005 Kim J, Freitas JA, Klein PB, Jang S, Ren F, Pearton SJ. The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy Electrochemical and Solid State Letters. 8. DOI: 10.1149/1.2103527  0.617
2004 Kim J, Baik KH, Kang BS, Kim S, Irokawa Y, Ren F, Pearton SJ, Chung GY. 4H-SiC Schottky Diode Array with 430 A Forward Current Electrochemical and Solid-State Letters. 7: G125. DOI: 10.1149/1.1697908  0.434
2004 LaRoche JR, Kim J, Johnson JW, Luo B, Kang BS, Mehandru R, Irokawa Y, Pearton SJ, Chung G, Ren F. Comparison of Interface State Density Characterization Methods for SiO[sub 2]/4H-SiC MOS Diodes Electrochemical and Solid-State Letters. 7: G21. DOI: 10.1149/1.1632872  0.416
2004 Buyanova IA, Bergman JP, Chen WM, Thaler G, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F, Kyrychenko FV, Stanton CJ, Pan C, Chen G, Chyi J, Zavada JM. Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2668. DOI: 10.1116/1.1819897  0.392
2004 Irokawa Y, Nakano Y, Ishiko M, Kachi T, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J. MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Applied Physics Letters. 84: 2919-2921. DOI: 10.1063/1.1704876  0.453
2004 Buyanova IA, Izadifard M, Chen WM, Kim J, Ren F, Thaler G, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J, Zavada JM. On the origin of spin loss in GaMnN/InGaN light-emitting diodes Applied Physics Letters. 84: 2599-2601. DOI: 10.1063/1.1695100  0.369
2004 Kim J, Ren F, Chung GY, MacMillan MF, Baca AG, Briggs RD, Schoenfeld D, Pearton SJ. Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation Applied Physics Letters. 84: 371-373. DOI: 10.1063/1.1642271  0.412
2004 Mehandru R, Luo B, Kang BS, Kim J, Ren F, Pearton SJ, Pan C-, Chen G-, Chyi J-. AlGaN/GaN HEMT based liquid sensors Solid-State Electronics. 48: 351-353. DOI: 10.1016/S0038-1101(03)00318-6  0.426
2004 Buyanova IA, Izadifard M, Storasta L, Chen WM, Kim J, Ren F, Thaler G, Abernathy CR, Pearton SJ, Pan C-, Chen G-, Chyi J-, Zavada JM. Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes Journal of Electronic Materials. 33: 467-471. DOI: 10.1007/S11664-004-0204-9  0.427
2004 Polyakov AY, Smirnov NB, Govorkov AV, Kim J, Ren F, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Buyanova IA, Rudko GY, Chen WM, Pan C-, Chen G-, et al. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Journal of Electronic Materials. 33: 241-247. DOI: 10.1007/S11664-004-0186-7  0.468
2003 Gila B, Luo B, Kim J, Mehandru R, LaRoche J, Onstine A, Lambers E, Siebein K, Abernathy C, Ren F, Pearton S. The Oxide/Nitride Interface: a study for gate dielectrics and field passivation Mrs Proceedings. 786. DOI: 10.1557/Proc-786-E8.5  0.471
2003 Nigam S, Kim J, Ren F, Chung G, MacMillan MF, Pearton SJ. Influence of PECVD of SiO[sub 2] Passivation Layers on 4H-SiC Schottky Rectifiers Electrochemical and Solid-State Letters. 6: G4. DOI: 10.1149/1.1524751  0.436
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, MacMillan MF, Williams JR, Pearton SJ. Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers Journal of the Electrochemical Society. 150: G1. DOI: 10.1149/1.1522387  0.464
2003 Gila BP, Onstine AH, Kim J, Allums KK, Ren F, Abernathy CR, Pearton SJ. Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 2368. DOI: 10.1116/1.1620516  0.457
2003 Irokawa Y, Kim J, Ren F, Baik KH, Gila BP, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J. Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes Applied Physics Letters. 83: 4987-4989. DOI: 10.1063/1.1634382  0.478
2003 Mehandru R, Luo B, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie J, Jenkins T, Sewell J, et al. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters. 82: 2530-2532. DOI: 10.1063/1.1567051  0.484
2003 Kim J, Ren F, Thaler GT, Frazier R, Abernathy CR, Pearton SJ, Zavada JM, Wilson RG. Vertical and lateral mobilities in n-(Ga, Mn)N Applied Physics Letters. 82: 1565-1567. DOI: 10.1063/1.1559442  0.438
2003 Kim J, Ren F, Gila BP, Abernathy CR, Pearton SJ. Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes Applied Physics Letters. 82: 739-741. DOI: 10.1063/1.1541944  0.425
2003 Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Norton DP, Theodoropoulou N, Hebard AF, Park YD, Ren F, Kim J, Boatner LA. Wide band gap ferromagnetic semiconductors and oxides Journal of Applied Physics. 93: 1-13. DOI: 10.1063/1.1517164  0.427
2003 Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, et al. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Solid-State Electronics. 47: 1781-1786. DOI: 10.1016/S0038-1101(03)00138-2  0.465
2003 Mehandru R, Kim S, Kim J, Ren F, Lothian JR, Pearton SJ, Park SS, Park YJ. Thermal simulations of high power, bulk GaN rectifiers Solid-State Electronics. 47: 1037-1043. DOI: 10.1016/S0038-1101(02)00481-1  0.436
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P. Effect of contact geometry on 4H-SiC rectifiers with junction termination extension Solid-State Electronics. 47: 57-60. DOI: 10.1016/S0038-1101(02)00273-3  0.446
2003 Pearton SJ, Park YD, Abernathy CR, Overberg ME, Thaler GT, Kim J, Ren F. GaN and other materials for semiconductor spintronics Journal of Electronic Materials. 32: 288-297. DOI: 10.1007/S11664-003-0147-6  0.446
2003 Pearton SJ, Overberg ME, Thaler GT, Abernathy CR, Kim J, Ren F, Theodoropoulou N, Hebard AF, Park YD. Room temperature ferromagnetism in GaMnN and GaMnP Physica Status Solidi (a) Applied Research. 195: 222-227. DOI: 10.1002/Pssa.200306283  0.427
2002 Kim J, Gila BP, Mehandru R, Luo B, Onstine AH, Abernathy CR, Ren F, Allums KK, Dwivedi R, Forgarty TN, Wilkins R, Irokawa Y, Pearton SJ. High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes Electrochemical and Solid-State Letters. 5: G57. DOI: 10.1149/1.1481796  0.467
2002 Mehandru R, Gila BP, Kim J, Johnson JW, Lee KP, Luo B, Onstine AH, Abernathy CR, Pearton SJ, Ren F. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide Electrochemical and Solid-State Letters. 5: G51. DOI: 10.1149/1.1479298  0.457
2002 Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NY, Kim J, Ren F, Overberg ME, Thaler GT, Abernathy CR, Pearton SJ, Wilson RG. Electrical and optical properties of GaN films implanted with Mn and Co Journal of Applied Physics. 92: 3130-3136. DOI: 10.1063/1.1499977  0.425
2002 Kim J, Ren F, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG. Pt Schottky contacts to n-(Ga,Mn)N Applied Physics Letters. 81: 658-660. DOI: 10.1063/1.1496130  0.43
2002 Kim J, Mehandru R, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Irokawa Y. Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes Applied Physics Letters. 80: 4555-4557. DOI: 10.1063/1.1487903  0.458
2002 Thaler GT, Overberg ME, Gila B, Frazier R, Abernathy CR, Pearton SJ, Lee JS, Lee SY, Park YD, Khim ZG, Kim J, Ren F. Magnetic properties of n-GaMnN thin films Applied Physics Letters. 80: 3964-3966. DOI: 10.1063/1.1481533  0.409
2002 Baik K, Luo B, Kim J, Pearton S, Ren F. Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation Solid-State Electronics. 46: 1459-1462. DOI: 10.1016/S0038-1101(02)00081-3  0.445
2002 Luo B, Kim J, Mehandru R, Ren F, Lee K, Pearton S, Polyakov A, Smirnov N, Govorkov A, Kozhukhova E, Osinsky A, Norris P. Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions Solid-State Electronics. 46: 1345-1349. DOI: 10.1016/S0038-1101(02)00066-7  0.457
2001 Luo B, Kim J, Mehandru R, Ren F, Lee KP, Pearton S, Polyakov A, Smirnov N, Govorkov A, Kozhukhova E, Osinsky A, Norris P. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I11.17.1  0.439
2001 Kim J, Luo B, Mehandru R, Ren F, Lee KP, Pearton S, Polyakov A, Smirnov N, Govorkov A, Osinsky A, Norris P. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I11.16.1  0.455
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