Stephen K. Powell, Ph.D.

2003

Neil Goldsman	grad student	2003	University of Maryland
(Surface physics modelling and evaluation of 6H-silicon carbide metal-oxide semiconductor field effect transistors with experimental corroboration.)

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Powell SK, Goldsman N, Lelis A, et al. (2005) High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 97
Zhang X, Goldsman N, Emstein JBB, et al. (2003) Numerical and experimental characterization of 4H-Sic schottky diodes 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 120-121
Powell SK, Goldsman N, McGarrity JM, et al. (2002) Physics-based numerical modeling and characterization of 6H-silicon-carbide metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 92: 4053-4061
Powell SK, Goldsman N, Scozzie CJ, et al. (2001) Self-consistent surface mobility and interface charge modeling in conjunction with experiment of 6H-SiC MOSFETs 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 572-574A