Marko J. Tadjer, Ph.D.
Affiliations: | 2010 | Electrical Engineering | University of Maryland, College Park, College Park, MD |
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"Marko Tadjer"Parents
Sign in to add mentor| April Brown | grad student | 2002-2004 | Duke | |
| John Melngailis | grad student | 2010 | University of Maryland | |
| (Nanocrystalline diamond thin film integration in aluminum gallium nitride/gallium nitride high electron mobility transistors and 4H-silicon carbide heterojunction diodes.) | ||||
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| Islam Z, Haque A, Glavin NR, et al. (2020) In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 55008 |
| Bai T, Wang Y, Feygelson TI, et al. (2020) Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Properties Ecs Journal of Solid State Science and Technology. 9: 053002 |
| Xian M, Fares C, Ren F, et al. (2020) Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 35007 |
| Islam Z, Xian M, Haque A, et al. (2020) In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Ieee Transactions On Electron Devices. 67: 3056-3061 |
| Tadjer MJ, Freitas JA, Culbertson JC, et al. (2020) Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres Journal of Physics D: Applied Physics. 53: 504002 |
| Fares C, Xian M, Smith DJ, et al. (2020) Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74 Journal of Applied Physics. 127: 105701 |
| Cheng Z, Wheeler VD, Bai T, et al. (2020) Integration of polycrystalline Ga2O3 on diamond for thermal management Applied Physics Letters. 116: 62105 |
| Cheng Z, Bai T, Shi J, et al. (2019) Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy. Acs Applied Materials & Interfaces |
| Gallagher JC, Koehler AD, Tadjer MJ, et al. (2019) Demonstration of CuI as a P–N heterojunction to β-Ga2O3 Applied Physics Express. 12: 104005 |
| Chen Y, Yang J, Ren F, et al. (2019) Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes Ecs Journal of Solid State Science and Technology. 8: Q3229-Q3234 |