April Brown
Affiliations: | Electrical and Computer Engineering | Duke University, Durham, NC |
Area:
Biochemistry, Electronics and Electrical Engineering, Physical ChemistryWebsite:
https://ece.duke.edu/faculty/april-brownGoogle:
"April Brown"Bio:
Parents
Sign in to add mentorLester F. Eastman | grad student | 1985 | Cornell (Physics Tree) | |
(Factors Influencing the Growth of GaInAs by Molecular Beam Epitaxy) |
Children
Sign in to add traineeMarko J. Tadjer | grad student | 2002-2004 | Duke |
Michael Angelo | grad student | 2008 | Duke |
Pae C. Wu | grad student | 2009 | Duke |
Congwen Yi | grad student | 2013 | Duke |
Wenyuan Jiao | grad student | 2010-2015 | Duke |
Wei Kong | grad student | 2016 | Duke |
Jingcheng Li | grad student | 2016 | Duke |
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Publications
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Collar KN, Li J, Jiao W, et al. (2018) Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. Nanotechnology. 29: 035604 |
Collar K, Li J, Jiao W, et al. (2017) Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy Aip Advances. 7: 075016 |
Kong W, Roberts AT, Jiao WY, et al. (2017) UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy Aip Advances. 7: 035109 |
Li J, Collar K, Jiao W, et al. (2016) Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs |
Giangregorio MM, Jiao W, Bianco GV, et al. (2015) Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids. Nanoscale |
Luo G, Yang S, Li J, et al. (2015) First-principles studies on molecular beam epitaxy growth of GaA s1-x B ix Physical Review B - Condensed Matter and Materials Physics. 92 |
Kong W, Roberts AT, Jiao WY, et al. (2015) Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy Applied Physics Letters. 107 |
Kong W, Jiao WY, Li JC, et al. (2015) Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy Applied Physics Letters. 107 |
Li J, Forghani K, Guan Y, et al. (2015) GaAs |
Losurdo M, Yi C, Suvorova A, et al. (2014) Demonstrating the capability of the high-performance plasmonic gallium-graphene couple. Acs Nano. 8: 3031-41 |