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Sign in to add mentor| Wen I. Wang | grad student | 2002 | Columbia | |
| (Optical characterization of indium gallium arsenic nitride/gallium arsenide semiconductor heterostructures and their potential for photodetector applications.) | ||||
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Publications
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| Pollock CR, Brilliant NA, Gwin D, et al. (2005) Mode locked and Q-switched Cr: ZnSe laser using a semiconductor saturable absorbing mirror (SESAM) Optics Infobase Conference Papers. 252-256 |
| Pollock CR, Brilliant NA, Gwin D, et al. (2005) Mode locked and Q-switched Cr:ZnSe laser using a Semiconductor Saturable Absorbing Mirror (SESAM) Osa Trends in Optics and Photonics Series. 98: 252-256 |
| Kouklin N, Chik H, Liang J, et al. (2003) Highly periodic, three-dimensionally arranged InGaAsN:Sb quantum dot arrays fabricated nonlithographically for optical devices Journal of Physics D: Applied Physics. 36: 2634-2638 |
| Yang X, Heroux JB, Jurkovic MJ, et al. (2000) High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1484-1487 |
| Yang X, Heroux JB, Jurkovic MJ, et al. (2000) Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy Ieee Photonics Technology Letters. 12: 128-130 |
| Yang X, Heroux JB, Jurkovic MJ, et al. (2000) High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy Applied Physics Letters. 76: 795-797 |
| Yang X, Jurkovic MJ, Heroux JB, et al. (1999) Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant Electronics Letters. 35: 1082-1083 |
| Yang X, Jurkovic MJ, Heroux JB, et al. (1999) Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Applied Physics Letters. 75: 178-180 |