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Jean B. Heroux, Ph.D. - Publications

Affiliations: 
2002 Columbia University, New York, NY 
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Pollock CR, Brilliant NA, Gwin D, Carrig TJ, Alford WJ, Heroux JB, Wang WI, Vurgaftman I, Meyer JR. Mode locked and Q-switched Cr: ZnSe laser using a semiconductor saturable absorbing mirror (SESAM) Optics Infobase Conference Papers. 252-256.  0.435
2005 Pollock CR, Brilliant NA, Gwin D, Carrig TJ, Alford WJ, Heroux JB, Wang WI, Vurgaftman I, Meyer JR. Mode locked and Q-switched Cr:ZnSe laser using a Semiconductor Saturable Absorbing Mirror (SESAM) Osa Trends in Optics and Photonics Series. 98: 252-256.  0.434
2003 Kouklin N, Chik H, Liang J, Tzolov M, Xu JM, Heroux JB, Wang WI. Highly periodic, three-dimensionally arranged InGaAsN:Sb quantum dot arrays fabricated nonlithographically for optical devices Journal of Physics D: Applied Physics. 36: 2634-2638. DOI: 10.1088/0022-3727/36/21/006  0.49
2000 Yang X, Heroux JB, Jurkovic MJ, Wang WI. High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1484-1487. DOI: 10.1116/1.591409  0.747
2000 Yang X, Heroux JB, Jurkovic MJ, Wang WI. Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy Ieee Photonics Technology Letters. 12: 128-130. DOI: 10.1109/68.823492  0.75
2000 Yang X, Heroux JB, Jurkovic MJ, Wang WI. High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy Applied Physics Letters. 76: 795-797.  0.716
1999 Yang X, Jurkovic MJ, Heroux JB, Wang WI. Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant Electronics Letters. 35: 1082-1083. DOI: 10.1049/el:19990763  0.747
1999 Yang X, Jurkovic MJ, Heroux JB, Wang WI. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Applied Physics Letters. 75: 178-180.  0.723
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