Prashant M. Chavarkar, Ph.D.
Affiliations: | 2000 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Prashant Chavarkar"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2000 | UC Santa Barbara | |
| (Lattice engineered substrates using lateral oxidation of aluminum arsenide.) | ||||
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Publications
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| Wu YF, Saxler A, Moore M, et al. (2004) 30-W/mm GaN HEMTs by Field Plate Optimization Ieee Electron Device Letters. 25: 117-119 |
| Parikh P, Wu YF, Moore M, et al. (2004) GaN HEMTs: Material, device, circuit technology and applications Imfedk 2004 - International Meeting For Future of Electron Devices, Kansai. 41-42 |
| Wu YF, Saxler A, Wisleder T, et al. (2004) Linearity performance of GaN HEMTs with field plates Device Research Conference - Conference Digest, Drc. 35-36 |
| Wu YF, Moore M, Wisleder T, et al. (2004) High-gain microwave GaN HEMTs with source-terminated field-plates Technical Digest - International Electron Devices Meeting, Iedm. 1078-1079 |
| Xing H, Chavarkar PM, Keller S, et al. (2003) Very high voltage operation (> 330 V) with high current gain of AlGaN/GaN HBTs Ieee Electron Device Letters. 24: 141-143 |
| Parikh P, Wu YF, Chavarkar P, et al. (2003) AlGaN-GaN HEMTs: Material, device, circuit technology and applications Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 165-166 |
| Wu YF, Moore M, Saxler A, et al. (2003) 3.5-Watt AlGaN/GaN HEMTs and Amplifiers at 35 GHz Technical Digest - International Electron Devices Meeting. 579-581 |
| Buttari D, Chini A, Meneghesso G, et al. (2002) Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 118-120 |
| Chavarkar P, Mishra U. (2001) Field effect transistors: FETs and HEMTs Thin Films. 28: 71-145 |
| Wu YF, Chavarkar PM, Moore M, et al. (2001) Bias-dependent performance of high-power AlGaN/GaN HEMTs Technical Digest - International Electron Devices Meeting. 378-380 |