Umesh Mishra
Affiliations: | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsWebsite:
https://engineering.ucsb.edu/people/umesh-mishraGoogle:
"Umesh Mishra"Bio:
https://www.nae.edu/31087/Dr-Umesh-Mishra
https://books.google.com/books?id=Qz5UAAAAYAAJ
Parents
Sign in to add mentorLester F. Eastman | grad student | 1984 | Cornell (Physics Tree) | |
(Fabrication and Characterization of Sub-micron GaAs Vertical Field Effect Transistors) |
Children
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Publications
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Wang J, Li H, Li H, et al. (2021) Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. Journal of Colloid and Interface Science. 603: 604-614 |
Wang J, Zhang X, Li H, et al. (2020) pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. Journal of Colloid and Interface Science. 583: 331-339 |
Pasayat SS, Gupta C, Wang Y, et al. (2020) Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN. Materials (Basel, Switzerland). 13 |
Liu W, Sayed I, Gupta C, et al. (2020) An improved methodology for extracting interface state density at Si3N4/GaN Applied Physics Letters. 116: 22104 |
Wurm C, Ahmadi E, Wu F, et al. (2020) Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Solid State Communications. 305: 113763 |
Wang J, Zhang X, Wang C, et al. (2019) pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. Journal of Colloid and Interface Science. 556: 680-688 |
Sayed I, Liu W, Chan S, et al. (2019) Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN Applied Physics Letters. 115: 32103 |
Asadnia M, Myers M, Umana-Membreno GA, et al. (2017) Ca(2+) detection utilising AlGaN/GaN transistors with ion-selective polymer membranes. Analytica Chimica Acta. 987: 105-110 |
Agarwal A, Gupta C, Alhassan A, et al. (2017) Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition Applied Physics Express. 10: 111002 |
Agarwal A, Tahhan M, Mates T, et al. (2017) Suppression of Mg propagation into subsequent layers grown by MOCVD Journal of Applied Physics. 121: 25106 |