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| Pasayat SS, Lund C, Tsukada Y, et al. (2020) Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD Journal of Electronic Materials. 49: 3450-3454 |
| Lund C, Nakamura S, DenBaars SP, et al. (2019) Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors Semiconductor Science and Technology. 34: 75017 |
| David A, Young NG, Lund C, et al. (2019) Compensation between radiative and Auger recombinations in III-nitrides: The scaling law of separated-wavefunction recombinations Applied Physics Letters. 115: 193502 |
| Reilly CE, Lund C, Nakamura S, et al. (2019) Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition Applied Physics Letters. 114: 241103 |
| Ji D, Gupta C, Agarwal A, et al. (2018) Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) Ieee Electron Device Letters. 39: 711-714 |
| Gupta C, Lund C, Chan SH, et al. (2018) Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355] Ieee Electron Device Letters. 39: 316-316 |
| Lund C, Agarwal A, Romanczyk B, et al. (2018) Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD Semiconductor Science and Technology. 33: 095014 |
| Lund C, Catalano M, Wang L, et al. (2018) Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN Journal of Applied Physics. 123: 055702 |
| Lund C, Hestroffer K, Hatui N, et al. (2017) Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates Applied Physics Express. 10: 111001 |
| Gupta C, Lund C, Chan SH, et al. (2017) In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates Ieee Electron Device Letters. 38: 353-355 |