Haoran Li
Affiliations: | 2011- | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
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"Haoran Li"
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| Dou Y, Liang Y, Li H, et al. (2022) Integration of HVO nanowires and a GaN thin film for self-powered UV photodetectors. Chemical Communications (Cambridge, England). 58: 8548-8551 |
| Wang J, Li H, Li H, et al. (2021) Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. Journal of Colloid and Interface Science. 603: 604-614 |
| Wang J, Zhang X, Li H, et al. (2020) pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. Journal of Colloid and Interface Science. 583: 331-339 |
| Romanczyk B, Guidry M, Zheng X, et al. (2020) Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Ieee Transactions On Electron Devices. 67: 1542-1546 |
| Bisi D, Meneghesso G, Mishra UK, et al. (2020) Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures Ieee Electron Device Letters. 41: 345-348 |
| Romanczyk B, Mishra UK, Zheng X, et al. (2020) W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352 |
| Prozheeva V, Makkonen I, Li H, et al. (2020) Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures Physical Review Applied. 13: 44034 |
| Hatui N, Krishna A, Li H, et al. (2020) Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002 |
| Liu W, Sayed I, Gupta C, et al. (2020) An improved methodology for extracting interface state density at Si3N4/GaN Applied Physics Letters. 116: 22104 |
| Wang J, Zhang X, Wang C, et al. (2019) pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. Journal of Colloid and Interface Science. 556: 680-688 |