| Year |
Citation |
Score |
| 2022 |
Dou Y, Liang Y, Li H, Xue Y, Ye H, Han Y. Integration of HVO nanowires and a GaN thin film for self-powered UV photodetectors. Chemical Communications (Cambridge, England). 58: 8548-8551. PMID 35815615 DOI: 10.1039/d2cc02773a |
0.334 |
|
| 2021 |
Wang J, Li H, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. Journal of Colloid and Interface Science. 603: 604-614. PMID 34217948 DOI: 10.1016/j.jcis.2021.06.126 |
0.614 |
|
| 2020 |
Wang J, Zhang X, Li H, Wang C, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. Journal of Colloid and Interface Science. 583: 331-339. PMID 33007589 DOI: 10.1016/J.Jcis.2020.09.036 |
0.655 |
|
| 2020 |
Romanczyk B, Guidry M, Zheng X, Li H, Ahmadi E, Keller S, Mishra UK. Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Ieee Transactions On Electron Devices. 67: 1542-1546. DOI: 10.1109/Ted.2020.2973081 |
0.815 |
|
| 2020 |
Bisi D, Meneghesso G, Mishra UK, Zanoni E, Wienecke S, Romanczyk B, Li H, Ahmadi E, Keller S, Guidry M, Santi CD, Meneghini M. Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures Ieee Electron Device Letters. 41: 345-348. DOI: 10.1109/Led.2020.2968875 |
0.806 |
|
| 2020 |
Romanczyk B, Mishra UK, Zheng X, Guidry M, Li H, Hatui N, Wurm C, Krishna A, Ahmadi E, Keller S. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352. DOI: 10.1109/Led.2020.2967034 |
0.82 |
|
| 2020 |
Prozheeva V, Makkonen I, Li H, Keller S, Mishra UK, Tuomisto F. Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures Physical Review Applied. 13: 44034. DOI: 10.1103/Physrevapplied.13.044034 |
0.407 |
|
| 2020 |
Hatui N, Krishna A, Li H, Gupta C, Romanczyk B, Acker-James D, Ahmadi E, Keller S, Mishra UK. Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002. DOI: 10.1088/1361-6641/Ab9727 |
0.82 |
|
| 2020 |
Liu W, Sayed I, Gupta C, Li H, Keller S, Mishra U. An improved methodology for extracting interface state density at Si3N4/GaN Applied Physics Letters. 116: 22104. DOI: 10.1063/1.5125645 |
0.733 |
|
| 2019 |
Wang J, Zhang X, Wang C, Li H, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. Journal of Colloid and Interface Science. 556: 680-688. PMID 31499439 DOI: 10.1016/J.Jcis.2019.08.079 |
0.643 |
|
| 2019 |
Sayed I, Liu W, Chan S, Gupta C, Li H, Keller S, Mishra UK. Flatband voltage stability and time to failure of MOCVD-grown SiO 2 and Si 3 N 4 dielectrics on N-polar GaN Applied Physics Express. 12: 121001. DOI: 10.7567/1882-0786/Ab4D39 |
0.826 |
|
| 2019 |
Rajabi S, Mandal S, Ercan B, Li H, Laurent MA, Keller S, Chowdhury S. A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor Ieee Electron Device Letters. 40: 885-888. DOI: 10.1109/Led.2019.2914026 |
0.824 |
|
| 2019 |
Sayed I, Liu W, Chan S, Gupta C, Guidry M, Li H, Keller S, Mishra U. Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN Applied Physics Letters. 115: 32103. DOI: 10.1063/1.5111148 |
0.843 |
|
| 2019 |
Rakoski A, Diez S, Li H, Keller S, Ahmadi E, Kurdak Ç. Electron transport in N-polar GaN-based heterostructures Applied Physics Letters. 114: 162102. DOI: 10.1063/1.5090233 |
0.5 |
|
| 2019 |
Parish G, Khir FLM, Krishnan NR, Wang J, Krisjanto JS, Li H, Umana-Membreno GA, Keller S, Mishra UK, Baker MV, Nener BD, Myers M. Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors Sensors and Actuators B: Chemical. 287: 250-257. DOI: 10.1016/J.Snb.2019.02.039 |
0.569 |
|
| 2018 |
Xu Z, Mandal S, Gao J, Surdi H, Li W, Yamaoka Y, Piao G, Tabuchi T, Li H, Matsumoto K, Chowdhury S. Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices Ieee Transactions On Electron Devices. 65: 5301-5306. DOI: 10.1109/Ted.2018.2875077 |
0.384 |
|
| 2018 |
Romanczyk B, Wienecke S, Guidry M, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs Ieee Transactions On Electron Devices. 65: 45-50. DOI: 10.1109/Ted.2017.2770087 |
0.821 |
|
| 2018 |
Bisi D, Santi CD, Meneghini M, Wienecke S, Guidry M, Li H, Ahmadi E, Keller S, Mishra UK, Meneghesso G, Zanoni E. Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs Ieee Electron Device Letters. 39: 1007-1010. DOI: 10.1109/Led.2018.2835517 |
0.825 |
|
| 2018 |
Koksaldi OS, Haller J, Li H, Romanczyk B, Guidry M, Wienecke S, Keller S, Mishra UK. N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance Ieee Electron Device Letters. 39: 1014-1017. DOI: 10.1109/Led.2018.2834939 |
0.807 |
|
| 2018 |
Ji D, Agarwal A, Li H, Li W, Keller S, Chowdhury S. 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates Ieee Electron Device Letters. 39: 863-865. DOI: 10.1109/Led.2018.2828844 |
0.805 |
|
| 2018 |
Zheng X, Li H, Guidry M, Romanczyk B, Ahmadi E, Hestroffer K, Wienecke S, Keller S, Mishra UK. Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ Ieee Electron Device Letters. 39: 409-412. DOI: 10.1109/Led.2018.2799160 |
0.794 |
|
| 2018 |
Li H, Wienecke S, Romanczyk B, Ahmadi E, Guidry M, Zheng X, Keller S, Mishra UK. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels Applied Physics Letters. 112: 73501. DOI: 10.1063/1.5010944 |
0.798 |
|
| 2018 |
Fireman MN, Li H, Keller S, Mishra UK, Speck JS. Growth of N-polar GaN by ammonia molecular beam epitaxy Journal of Crystal Growth. 481: 65-70. DOI: 10.1016/J.Jcrysgro.2017.10.033 |
0.405 |
|
| 2017 |
Wienecke S, Romanczyk B, Guidry M, Li H, Ahmadi E, Hestroffer K, Zheng X, Keller S, Mishra UK. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz Ieee Electron Device Letters. 38: 359-362. DOI: 10.1109/Led.2017.2653192 |
0.824 |
|
| 2017 |
Li H, Mazumder B, Bonef B, Keller S, Wienecke S, Speck JS, Denbaars SP, Mishra UK. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 32: 115004. DOI: 10.1088/1361-6641/Aa8B30 |
0.813 |
|
| 2017 |
Fireman MN, Li H, Keller S, Mishra UK, Speck JS. Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy Journal of Applied Physics. 121: 205702. DOI: 10.1063/1.4983767 |
0.454 |
|
| 2017 |
Hestroffer K, Lund C, Koksaldi O, Li H, Schmidt G, Trippel M, Veit P, Bertram F, Lu N, Wang Q, Christen J, Kim MJ, Mishra UK, Keller S. Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 465: 55-59. DOI: 10.1016/J.Jcrysgro.2017.02.037 |
0.807 |
|
| 2016 |
Chan SH, Tahhan M, Liu X, Bisi D, Gupta C, Koksaldi O, Li H, Mates T, DenBaars SP, Keller S, Mishra UK. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.021501 |
0.77 |
|
| 2016 |
Tahhan M, Nedy J, Chan SH, Lund C, Li H, Gupta G, Keller S, Mishra U. Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944054 |
0.783 |
|
| 2016 |
Wienecke S, Romanczyk B, Guidry M, Li H, Zheng X, Ahmadi E, Hestroffer K, Megalini L, Keller S, Mishra UK. N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz Ieee Electron Device Letters. 37: 713-716. DOI: 10.1109/Led.2016.2556717 |
0.832 |
|
| 2016 |
Zheng X, Guidry M, Li H, Ahmadi E, Hestroffer K, Romanczyk B, Wienecke S, Keller S, Mishra UK. N-Polar GaN MIS-HEMTs on Sapphire with High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage Ieee Electron Device Letters. 37: 77-80. DOI: 10.1109/Led.2015.2502253 |
0.832 |
|
| 2016 |
Chan SH, Keller S, Tahhan M, Li H, Romanczyk B, Denbaars SP, Mishra UK. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/6/065008 |
0.825 |
|
| 2016 |
Romanczyk B, Guidry M, Wienecke S, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz Electronics Letters. 52: 1813-1814. DOI: 10.1049/El.2016.2664 |
0.818 |
|
| 2016 |
Hestroffer K, Lund C, Li H, Keller S, Speck JS, Mishra UK. Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) Physica Status Solidi B-Basic Solid State Physics. 253: 792-792. DOI: 10.1002/Pssb.201670525 |
0.657 |
|
| 2016 |
Hestroffer K, Lund C, Li H, Keller S, Speck JS, Mishra UK. Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades Physica Status Solidi (B) Basic Research. 253: 626-629. DOI: 10.1002/Pssb.201552550 |
0.75 |
|
| 2015 |
Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra UK. Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers Ieee Electron Device Letters. 36: 23-25. DOI: 10.1109/Led.2014.2373375 |
0.825 |
|
| 2015 |
Li H, Keller S, Chan SH, Lu J, Denbaars SP, Mishra UK. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055015 |
0.827 |
|
| 2015 |
Ahmadi E, Wu F, Li H, Kaun SW, Tahhan M, Hestroffer K, Keller S, Speck JS, Mishra UK. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Semiconductor Science and Technology. 30: 1-8. DOI: 10.1088/0268-1242/30/5/055012 |
0.835 |
|
| 2015 |
Hestroffer K, Wu F, Li H, Lund C, Keller S, Speck JS, Mishra UK. Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105015 |
0.766 |
|
| 2015 |
Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105003 |
0.815 |
|
| 2015 |
Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Barrier height fluctuations in InGaN polarization dipole diodes Applied Physics Letters. 107. DOI: 10.1063/1.4934876 |
0.786 |
|
| 2015 |
Kim J, Laurent MA, Li H, Lal S, Mishra UK. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain Applied Physics Letters. 106. DOI: 10.1063/1.4906074 |
0.823 |
|
| 2014 |
Li H, Keller S, DenBaars SP, Mishra UK. Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers Japanese Journal of Applied Physics. 53: 95504. DOI: 10.7567/Jjap.53.095504 |
0.489 |
|
| 2014 |
Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001 |
0.824 |
|
| 2014 |
Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN Applied Physics Letters. 105. DOI: 10.1063/1.4905367 |
0.803 |
|
| 2014 |
Liu X, Kim J, Suntrup DJ, Wienecke S, Tahhan M, Yeluri R, Chan SH, Lu J, Li H, Keller S, Mishra UK. In situ metalorganic chemical vapor deposition of Al2O 3 on N-face GaN and evidence of polarity induced fixed charge Applied Physics Letters. 104. DOI: 10.1063/1.4886768 |
0.784 |
|
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