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Shalini Lal - Publications

Affiliations: 
2015 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Lal S, Lu J, Thibeault BJ, Wong MH, DenBaars SP, Mishra UK. Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization Ieee Transactions On Electron Devices. 65: 1079-1086. DOI: 10.1109/Ted.2018.2797046  0.544
2015 Kim J, Laurent MA, Li H, Lal S, Mishra UK. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain Applied Physics Letters. 106. DOI: 10.1063/1.4906074  0.779
2014 Yeluri R, Liu X, Guidry M, Koksaldi OS, Lal S, Kim J, Lu J, Keller S, Mishra UK. Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN Applied Physics Letters. 105. DOI: 10.1063/1.4903344  0.707
2014 Lu J, Zheng X, Guidry M, Denninghoff D, Ahmadi E, Lal S, Keller S, Denbaars SP, Mishra UK. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors Applied Physics Letters. 104. DOI: 10.1063/1.4867508  0.768
2013 Lal S, Lu J, Gupta G, Thibeault BJ, Denbaars SP, Mishra UK. Impact of gate-aperture overlap on the channel-pinch off in ingaas/ingan-based bonded aperture vertical electron transistor Ieee Electron Device Letters. 34: 1500-1502. DOI: 10.1109/Led.2013.2286954  0.767
2013 Kim J, Toledo NG, Lal S, Lu J, Buehl TE, Mishra UK. Wafer-bonded p-n heterojunction of GaAs and chemomechanically polished N-polar GaN Ieee Electron Device Letters. 34: 42-44. DOI: 10.1109/Led.2012.2225137  0.762
2013 Liu X, Kim J, Yeluri R, Lal S, Li H, Lu J, Keller S, Mazumder B, Speck JS, Mishra UK. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 114. DOI: 10.1063/1.4827201  0.788
2013 Liu X, Yeluri R, Kim J, Lal S, Raman A, Lund C, Wienecke S, Lu J, Laurent M, Keller S, Mishra UK. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 103. DOI: 10.1063/1.4817385  0.675
2013 Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997  0.708
2012 Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/S11664-012-1977-X  0.777
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