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Brian L. Swenson, Ph.D. - Publications

Affiliations: 
2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Kikkawa T, Hosoda T, Imanishi K, Shono K, Itabashi K, Ogino T, Miyazaki Y, Mochizuki A, Kiuchi K, Kanamura M, Kamiyama M, Akiyama S, Kawasaki S, Maeda T, Asai Y, ... ... Swenson B, et al. 600 v JEDEC-qualified highly reliable GaN HEMTs on Si substrates Technical Digest - International Electron Devices Meeting, Iedm. 2015: 2.6.1-2.6.4. DOI: 10.1109/IEDM.2014.7046968  0.647
2014 Wu YF, Gritters J, Shen L, Smith RP, Swenson B. KV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 v and 100 kHz Ieee Transactions On Power Electronics. 29: 2634-2637. DOI: 10.1109/Tpel.2013.2284248  0.664
2013 Chowdhury S, Swenson BL, Wong MH, Mishra UK. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074014  0.704
2013 Schaake CA, Brown DF, Swenson BL, Keller S, Speck JS, Mishra UK. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105021  0.725
2013 Yeluri R, Liu X, Swenson BL, Lu J, Keller S, Mishra UK. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114. DOI: 10.1063/1.4819402  0.759
2012 Chowdhury S, Wong MH, Swenson BL, Mishra UK. CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43. DOI: 10.1109/Led.2011.2173456  0.711
2012 Yeluri R, Swenson BL, Mishra UK. Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material Journal of Applied Physics. 111. DOI: 10.1063/1.3687355  0.75
2012 Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/S11664-012-1977-X  0.743
2011 Chowdhury S, Swenson BL, Lu J, Mishra UK. Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101002  0.615
2011 Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson B, Thibeault BJ, Speck JS, Mishra UK. Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth Ieee Electron Device Letters. 32: 137-139. DOI: 10.1109/Led.2010.2090125  0.558
2010 Mishra UK, Wong MH, Nidhi, Dasgupta S, Brown DF, Swenson BL, Keller S, Speck JS. N-polar Gan-based MIS-HEMTS for mixed signal applications Ieee Mtt-S International Microwave Symposium Digest. 1130-1133. DOI: 10.1109/MWSYM.2010.5518201  0.374
2010 Nidhi, Dasgupta S, Pei Y, Swenson BL, Keller S, Speck JS, Mishra UK. N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439. DOI: 10.1109/Led.2010.2078791  0.712
2010 Chowdhury S, Wong MH, Swenson BL, Mishra UK. Dispersion-free AlGaN/GaN CA VET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2010.5551906  0.363
2010 Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson BL, Thibeault BJ, Speck JS, Mishra UK. Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Device Research Conference - Conference Digest, Drc. 191-192. DOI: 10.1109/DRC.2010.5551902  0.346
2010 Higashiwaki M, Chowdhury S, Swenson BL, Mishra UK. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures Applied Physics Letters. 97. DOI: 10.1063/1.3522649  0.569
2010 Higashiwaki M, Chowdhury S, Miao MS, Swenson BL, Van De Walle CG, Mishra UK. Distribution of donor states on etched surface of AlGaN/GaN heterostructures Journal of Applied Physics. 108. DOI: 10.1063/1.3481412  0.566
2009 Sansaptak ND, Pie Y, Swenson BL, Brown DF, Keller S, Speck JS, Mishra UK. fT and fMAX of 47 and 81 GHz, respectively, on N-polar GaN/AlN MIS-HEMT Ieee Electron Device Letters. 30: 599-601. DOI: 10.1109/Led.2009.2020305  0.494
2009 Swenson BL, Mishra UK. Photoassisted high-frequency capacitance-voltage characterization of the Si3 N4 /GaN interface Journal of Applied Physics. 106. DOI: 10.1063/1.3224852  0.411
2008 Chowdhury S, Swenson BL, Mishra UK. Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer Ieee Electron Device Letters. 29: 543-545. DOI: 10.1109/Led.2008.922982  0.626
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543  0.755
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, Denbaars SP, Speck JS, Mishra UK. Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2008.4800802  0.595
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