Year |
Citation |
Score |
2015 |
Kikkawa T, Hosoda T, Imanishi K, Shono K, Itabashi K, Ogino T, Miyazaki Y, Mochizuki A, Kiuchi K, Kanamura M, Kamiyama M, Akiyama S, Kawasaki S, Maeda T, Asai Y, ... ... Swenson B, et al. 600 v JEDEC-qualified highly reliable GaN HEMTs on Si substrates Technical Digest - International Electron Devices Meeting, Iedm. 2015: 2.6.1-2.6.4. DOI: 10.1109/IEDM.2014.7046968 |
0.647 |
|
2014 |
Wu YF, Gritters J, Shen L, Smith RP, Swenson B. KV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 v and 100 kHz Ieee Transactions On Power Electronics. 29: 2634-2637. DOI: 10.1109/Tpel.2013.2284248 |
0.664 |
|
2013 |
Chowdhury S, Swenson BL, Wong MH, Mishra UK. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074014 |
0.704 |
|
2013 |
Schaake CA, Brown DF, Swenson BL, Keller S, Speck JS, Mishra UK. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105021 |
0.725 |
|
2013 |
Yeluri R, Liu X, Swenson BL, Lu J, Keller S, Mishra UK. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114. DOI: 10.1063/1.4819402 |
0.758 |
|
2012 |
Chowdhury S, Wong MH, Swenson BL, Mishra UK. CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43. DOI: 10.1109/Led.2011.2173456 |
0.711 |
|
2012 |
Yeluri R, Swenson BL, Mishra UK. Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material Journal of Applied Physics. 111. DOI: 10.1063/1.3687355 |
0.75 |
|
2012 |
Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/S11664-012-1977-X |
0.744 |
|
2011 |
Chowdhury S, Swenson BL, Lu J, Mishra UK. Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101002 |
0.613 |
|
2011 |
Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson B, Thibeault BJ, Speck JS, Mishra UK. Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth Ieee Electron Device Letters. 32: 137-139. DOI: 10.1109/Led.2010.2090125 |
0.558 |
|
2010 |
Mishra UK, Wong MH, Nidhi, Dasgupta S, Brown DF, Swenson BL, Keller S, Speck JS. N-polar Gan-based MIS-HEMTS for mixed signal applications Ieee Mtt-S International Microwave Symposium Digest. 1130-1133. DOI: 10.1109/MWSYM.2010.5518201 |
0.374 |
|
2010 |
Nidhi, Dasgupta S, Pei Y, Swenson BL, Keller S, Speck JS, Mishra UK. N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439. DOI: 10.1109/Led.2010.2078791 |
0.711 |
|
2010 |
Chowdhury S, Wong MH, Swenson BL, Mishra UK. Dispersion-free AlGaN/GaN CA VET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2010.5551906 |
0.362 |
|
2010 |
Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson BL, Thibeault BJ, Speck JS, Mishra UK. Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Device Research Conference - Conference Digest, Drc. 191-192. DOI: 10.1109/DRC.2010.5551902 |
0.346 |
|
2010 |
Higashiwaki M, Chowdhury S, Swenson BL, Mishra UK. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures Applied Physics Letters. 97. DOI: 10.1063/1.3522649 |
0.569 |
|
2010 |
Higashiwaki M, Chowdhury S, Miao MS, Swenson BL, Van De Walle CG, Mishra UK. Distribution of donor states on etched surface of AlGaN/GaN heterostructures Journal of Applied Physics. 108. DOI: 10.1063/1.3481412 |
0.565 |
|
2009 |
Sansaptak ND, Pie Y, Swenson BL, Brown DF, Keller S, Speck JS, Mishra UK. fT and fMAX of 47 and 81 GHz, respectively, on N-polar GaN/AlN MIS-HEMT Ieee Electron Device Letters. 30: 599-601. DOI: 10.1109/Led.2009.2020305 |
0.494 |
|
2009 |
Swenson BL, Mishra UK. Photoassisted high-frequency capacitance-voltage characterization of the Si3 N4 /GaN interface Journal of Applied Physics. 106. DOI: 10.1063/1.3224852 |
0.411 |
|
2008 |
Chowdhury S, Swenson BL, Mishra UK. Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer Ieee Electron Device Letters. 29: 543-545. DOI: 10.1109/Led.2008.922982 |
0.626 |
|
2008 |
Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543 |
0.754 |
|
2008 |
Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, Denbaars SP, Speck JS, Mishra UK. Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2008.4800802 |
0.593 |
|
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