| Year |
Citation |
Score |
| 2020 |
Sohel SH, Xie A, Beam E, Xue H, Razzak T, Bajaj S, Campbell S, White D, Wills K, Cao Y, Lu W, Rajan S. Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors Applied Physics Express. 13: 36502. DOI: 10.35848/1882-0786/Ab7480 |
0.449 |
|
| 2020 |
Cheng J, Yang H, Wang C, Combs N, Freeze C, Shoron O, Wu W, Kalarickal NK, Chandrasekar H, Stemmer S, Rajan S, Lu W. Nanoscale etching of perovskite oxides for field effect transistor applications Journal of Vacuum Science & Technology B. 38: 12201. DOI: 10.1116/1.5122667 |
0.364 |
|
| 2020 |
Lee H, Zhang Y, Chen Z, Rahman MW, Zhao H, Rajan S. Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension Ieee Transactions On Electron Devices. 67: 3553-3557. DOI: 10.1109/Ted.2020.3007133 |
0.465 |
|
| 2020 |
Xue H, Hussain K, Razzak T, Gaevski M, Sohel SH, Mollah S, Talesara V, Khan A, Rajan S, Lu W. Al 0.65 Ga 0.35 N/Al 0.4 Ga 0.6 N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm Ieee Electron Device Letters. 41: 677-680. DOI: 10.1109/Led.2020.2977997 |
0.428 |
|
| 2020 |
Cheng J, Wang C, Freeze C, Shoron O, Combs N, Yang H, Kalarickal NK, Xia Z, Stemmer S, Rajan S, Lu W. High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors Ieee Electron Device Letters. 41: 621-624. DOI: 10.1109/Led.2020.2976456 |
0.686 |
|
| 2020 |
Sohel SH, Cao Y, Lu W, Rajan S, Rahman MW, Xie A, Beam E, Cui Y, Kruzich M, Xue H, Razzak T, Bajaj S. Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN x Passivation Ieee Electron Device Letters. 41: 19-22. DOI: 10.1109/Led.2019.2951655 |
0.457 |
|
| 2020 |
Jamal-Eddine Z, Hasan SMN, Gunning B, Chandrasekar H, Crawford M, Armstrong A, Arafin S, Rajan S. Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs Applied Physics Letters. 117: 51103. DOI: 10.1063/5.0015403 |
0.438 |
|
| 2020 |
Zhang Y, Chen Z, Li W, Lee H, Karim R, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707. DOI: 10.1063/5.0008758 |
0.377 |
|
| 2020 |
Kalarickal NK, Xia Z, McGlone JF, Liu Y, Moore W, Arehart AR, Ringel SA, Rajan S. High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706. DOI: 10.1063/5.0005531 |
0.674 |
|
| 2020 |
Verma D, Adnan MMR, Rahman MW, Rajan S, Myers RC. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy Applied Physics Letters. 116: 202102. DOI: 10.1063/1.5144778 |
0.602 |
|
| 2020 |
Razzak T, Chandrasekar H, Hussain K, Lee CH, Mamun A, Xue H, Xia Z, Sohel SH, Rahman MW, Bajaj S, Wang C, Lu W, Khan A, Rajan S. BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Applied Physics Letters. 116: 23507. DOI: 10.1063/1.5130590 |
0.673 |
|
| 2020 |
Xue H, Hwang S, Razzak T, Lee C, Calderon Ortiz G, Xia Z, Hasan Sohel S, Hwang J, Rajan S, Khan A, Lu W. All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors Solid-State Electronics. 164: 107696. DOI: 10.1016/J.Sse.2019.107696 |
0.689 |
|
| 2020 |
Lee H, Kalarickal NK, Rahman MW, Xia Z, Moore W, Wang C, Rajan S. High-permittivity dielectric edge termination for vertical high voltage devices Journal of Computational Electronics. 1-8. DOI: 10.1007/S10825-020-01553-Y |
0.667 |
|
| 2020 |
Feng Z, Bhuiyan AFMAU, Xia Z, Moore W, Chen Z, McGlone JF, Daughton DR, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145. DOI: 10.1002/Pssr.202000145 |
0.575 |
|
| 2020 |
Chandrasekar H, Razzak T, Wang C, Reyes Z, Majumdar K, Rajan S. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates Advanced Electronic Materials. 6: 2000074. DOI: 10.1002/Aelm.202000074 |
0.483 |
|
| 2019 |
Xue H, Lee CH, Hussian K, Razzak T, Abdullah M, Xia Z, Sohel SH, Khan A, Rajan S, Lu W. Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz Applied Physics Express. 12: 66502. DOI: 10.7567/1882-0786/Ab1Cf9 |
0.674 |
|
| 2019 |
Zhang Y, Jamal-Eddine Z, Rajan S. Recent progress of tunnel junction-based ultra-violet light emitting diodes Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Ab1254 |
0.426 |
|
| 2019 |
Jamal-Eddine Z, Zhang Y, Rajan S. Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics International Journal of High Speed Electronics and Systems. 28: 1940012. DOI: 10.1142/S0129156419400123 |
0.325 |
|
| 2019 |
Razzak T, Rajan S, Armstrong A. Ultra-Wide Bandgap AlxGa1-xN Channel Transistors International Journal of High Speed Electronics and Systems. 28: 1940009. DOI: 10.1142/S0129156419400093 |
0.413 |
|
| 2019 |
Ancona MG, Calame JP, Meyer DJ, Rajan S, Downey BP. Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study Ieee Transactions On Electron Devices. 66: 2151-2157. DOI: 10.1109/Ted.2019.2904005 |
0.429 |
|
| 2019 |
Zhang Y, Xia Z, Mcglone J, Sun W, Joishi C, Arehart AR, Ringel SA, Rajan S. Evaluation of Low-Temperature Saturation Velocity in
$\beta$
-(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 1574-1578. DOI: 10.1109/Ted.2018.2889573 |
0.66 |
|
| 2019 |
Xia Z, Wang C, Kalarickal NK, Stemmer S, Rajan S. Design of Transistors Using High-Permittivity Materials Ieee Transactions On Electron Devices. 66: 896-900. DOI: 10.1109/Ted.2018.2888834 |
0.647 |
|
| 2019 |
Joishi C, Zhang Y, Xia Z, Sun W, Arehart AR, Ringel S, Lodha S, Rajan S. Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244. DOI: 10.1109/Led.2019.2921116 |
0.651 |
|
| 2019 |
Xia Z, Xue H, Joishi C, Mcglone J, Kalarickal NK, Sohel SH, Brenner M, Arehart A, Ringel S, Lodha S, Lu W, Rajan S. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055. DOI: 10.1109/Led.2019.2920366 |
0.67 |
|
| 2019 |
Sohel SH, Xie A, Beam E, Xue H, Razzak T, Bajaj S, Cao Y, Lee C, Lu W, Rajan S. Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications Ieee Electron Device Letters. 40: 522-525. DOI: 10.1109/Led.2019.2899100 |
0.438 |
|
| 2019 |
Arafin S, Hasan SMN, Jamal-Eddine Z, Wickramaratne D, Paul B, Rajan S. Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission Semiconductor Science and Technology. 34: 74002. DOI: 10.1088/1361-6641/Ab19Cd |
0.426 |
|
| 2019 |
Xia Z, Chandrasekar H, Moore W, Wang C, Lee AJ, McGlone J, Kalarickal NK, Arehart A, Ringel S, Yang F, Rajan S. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Applied Physics Letters. 115: 252104. DOI: 10.1063/1.5130669 |
0.692 |
|
| 2019 |
Kalarickal NK, Xia Z, McGlone J, Krishnamoorthy S, Moore W, Brenner M, Arehart AR, Ringel SA, Rajan S. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters. 115: 152106. DOI: 10.1063/1.5123149 |
0.713 |
|
| 2019 |
McGlone JF, Xia Z, Joishi C, Lodha S, Rajan S, Ringel S, Arehart AR. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters. 115: 153501. DOI: 10.1063/1.5118250 |
0.669 |
|
| 2019 |
Razzak T, Hwang S, Coleman A, Xue H, Sohel SH, Bajaj S, Zhang Y, Lu W, Khan A, Rajan S. Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors Applied Physics Letters. 115: 43502. DOI: 10.1063/1.5108529 |
0.458 |
|
| 2019 |
Chandrasekar H, Cheng J, Wang T, Xia Z, Combs NG, Freeze CR, Marshall PB, McGlone J, Arehart A, Ringel S, Janotti A, Stemmer S, Lu W, Rajan S. Velocity saturation in La-doped BaSnO3 thin films Applied Physics Letters. 115: 92102. DOI: 10.1063/1.5097791 |
0.668 |
|
| 2019 |
Biswas D, Joishi C, Biswas J, Thakar K, Rajan S, Lodha S. Enhanced n-type β-Ga2O3 ( 2 ¯ 01 ) gate stack performance using Al2O3/SiO2 bi-layer dielectric Applied Physics Letters. 114: 212106. DOI: 10.1063/1.5089627 |
0.409 |
|
| 2018 |
O'Hara DJ, Zhu T, Trout AH, Ahmed AS, Luo YK, Lee CH, Brenner MR, Rajan S, Gupta JA, McComb DW, Kawakami RK. Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit. Nano Letters. PMID 29608316 DOI: 10.1021/Acs.Nanolett.8B00683 |
0.314 |
|
| 2018 |
Armstrong AM, Klein BA, Colon A, Allerman AA, Douglas EA, Baca AG, Fortune TR, Abate VM, Bajaj S, Rajan S. Ultra-wide band gap AlGaN polarization-doped field effect transistor Japanese Journal of Applied Physics. 57: 074103. DOI: 10.7567/Jjap.57.074103 |
0.512 |
|
| 2018 |
Pratiyush AS, Krishnamoorthy S, Kumar S, Xia Z, Muralidharan R, Rajan S, Nath DN. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector Japanese Journal of Applied Physics. 57: 60313. DOI: 10.7567/Jjap.57.060313 |
0.741 |
|
| 2018 |
Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H, Rajan S. Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes Applied Physics Express. 11: 31101. DOI: 10.7567/Apex.11.031101 |
0.745 |
|
| 2018 |
Pratiyush AS, Xia Z, Kumar S, Zhang Y, Joishi C, Muralidharan R, Rajan S, Nath DN. MBE-Grown
$\beta$
-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 Ieee Photonics Technology Letters. 30: 2025-2028. DOI: 10.1109/Lpt.2018.2874725 |
0.657 |
|
| 2018 |
Sohel SH, Xie A, Beam E, Xue H, Roussos JA, Razzak T, Bajaj S, Cao Y, Meyer DJ, Lu W, Rajan S. X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors Ieee Electron Device Letters. 39: 1884-1887. DOI: 10.1109/Led.2018.2874443 |
0.397 |
|
| 2018 |
Mcglone JF, Xia Z, Zhang Y, Joishi C, Lodha S, Rajan S, Ringel SA, Arehart AR. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate Ieee Electron Device Letters. 39: 1042-1045. DOI: 10.1109/Led.2018.2843344 |
0.631 |
|
| 2018 |
Xia Z, Joishi C, Krishnamoorthy S, Bajaj S, Zhang Y, Brenner M, Lodha S, Rajan S. Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Ieee Electron Device Letters. 39: 568-571. DOI: 10.1109/Led.2018.2805785 |
0.763 |
|
| 2018 |
Bajaj S, Allerman A, Armstrong A, Razzak T, Talesara V, Sun W, Sohel SH, Zhang Y, Lu W, Arehart AR, Akyol F, Rajan S. High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm Ieee Electron Device Letters. 39: 256-259. DOI: 10.1109/Led.2017.2780221 |
0.441 |
|
| 2018 |
Joishi C, Xia Z, McGlone J, Zhang Y, Arehart AR, Ringel S, Lodha S, Rajan S. Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters. 113: 123501. DOI: 10.1063/1.5039502 |
0.644 |
|
| 2018 |
Zhang Y, Joishi C, Xia Z, Brenner M, Lodha S, Rajan S. Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors Applied Physics Letters. 112: 233503. DOI: 10.1063/1.5037095 |
0.652 |
|
| 2018 |
Gao H, Muralidharan S, Pronin N, Karim MR, White SM, Asel T, Foster G, Krishnamoorthy S, Rajan S, Cao LR, Higashiwaki M, von Wenckstern H, Grundmann M, Zhao H, Look DC, et al. Optical signatures of deep level defects in Ga2O3 Applied Physics Letters. 112: 242102. DOI: 10.1063/1.5026770 |
0.57 |
|
| 2018 |
Zhang Y, Neal A, Xia Z, Joishi C, Johnson JM, Zheng Y, Bajaj S, Brenner M, Dorsey D, Chabak K, Jessen G, Hwang J, Mou S, Heremans JP, Rajan S. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Applied Physics Letters. 112: 173502. DOI: 10.1063/1.5025704 |
0.647 |
|
| 2018 |
Zhang Y, Jamal-Eddine Z, Akyol F, Bajaj S, Johnson JM, Calderon G, Allerman AA, Moseley MW, Armstrong AM, Hwang J, Rajan S. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Applied Physics Letters. 112: 071107. DOI: 10.1063/1.5017045 |
0.45 |
|
| 2018 |
Razzak T, Hwang S, Coleman A, Bajaj SS, Xue H, Zhang Y, Jamal-Eddine Z, Sohel S, Lu W, Khan MA, Rajan S. RF operation in graded Al x Ga1−x N (x = 0.65 to 0.82) channel transistors Electronics Letters. 54: 1351-1353. DOI: 10.1049/El.2018.6897 |
0.403 |
|
| 2017 |
Akyol F, Zhang Y, Krishnamoorthy S, Rajan S. Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content Applied Physics Express. 10: 121003. DOI: 10.7567/Apex.10.121003 |
0.698 |
|
| 2017 |
Krishnamoorthy S, Xia Z, Bajaj S, Brenner M, Rajan S. Delta-doped β-gallium oxide field-effect transistor Applied Physics Express. 10: 51102. DOI: 10.7567/Apex.10.051102 |
0.752 |
|
| 2017 |
Lee CH, Lee EW, McCulloch W, Jamal-Eddine Z, Krishnamoorthy S, Newburger MJ, Kawakami RK, Wu Y, Rajan S. A self-limiting layer-by-layer etching technique for 2H-MoS2 Applied Physics Express. 10: 35201. DOI: 10.7567/Apex.10.035201 |
0.579 |
|
| 2017 |
Bajaj S, Yang Z, Akyol F, Park PS, Zhang Y, Price AL, Krishnamoorthy S, Meyer DJ, Rajan S. Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity Ieee Transactions On Electron Devices. 64: 3114-3119. DOI: 10.1109/Ted.2017.2713784 |
0.63 |
|
| 2017 |
Zhang Y, Krishnamoorthy S, Akyol F, Johnson JM, Allerman AA, Moseley MW, Armstrong AM, Hwang J, Rajan S. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Applied Physics Letters. 111: 051104. DOI: 10.1063/1.4997328 |
0.66 |
|
| 2017 |
Lee CH, Krishnamoorthy S, Paul PK, O'Hara DJ, Brenner MR, Kawakami RK, Arehart AR, Rajan S. Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 111: 202101. DOI: 10.1063/1.4994582 |
0.664 |
|
| 2017 |
Krishnamoorthy S, Xia Z, Joishi C, Zhang Y, McGlone J, Johnson J, Brenner M, Arehart AR, Hwang J, Lodha S, Rajan S. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor Applied Physics Letters. 111: 023502. DOI: 10.1063/1.4993569 |
0.757 |
|
| 2017 |
Pratiyush AS, Krishnamoorthy S, Solanke SV, Xia Z, Muralidharan R, Rajan S, Nath DN. High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector Applied Physics Letters. 110: 221107. DOI: 10.1063/1.4984904 |
0.737 |
|
| 2017 |
Zhang Y, Krishnamoorthy S, Akyol F, Bajaj S, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Tunnel-injected sub-260 nm ultraviolet light emitting diodes Applied Physics Letters. 110: 201102. DOI: 10.1063/1.4983352 |
0.673 |
|
| 2017 |
Lee CH, Krishnamoorthy S, O'Hara DJ, Brenner MR, Johnson JM, Jamison JS, Myers RC, Kawakami RK, Hwang J, Rajan S. Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates Journal of Applied Physics. 121: 094302. DOI: 10.1063/1.4977697 |
0.729 |
|
| 2017 |
Johnson JM, Hee Lee C, Krishnamoorthy S, Rajan S, Hwang J. Atomic Scale Structure and Defects in 2D GaSe Films and Van der Waals Interface Microscopy and Microanalysis. 23: 1728-1729. DOI: 10.1017/S1431927617009308 |
0.556 |
|
| 2017 |
Johnson JM, Krishnamoorthy S, Rajan S, Hwang J. Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces Microscopy and Microanalysis. 23: 1454-1455. DOI: 10.1017/S1431927617007930 |
0.574 |
|
| 2017 |
Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501 |
0.616 |
|
| 2016 |
Khurgin JB, Bajaj S, Rajan S. Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors Applied Physics Express. 9: 094101. DOI: 10.7567/Apex.9.094101 |
0.363 |
|
| 2016 |
Zhang Y, Allerman AA, Krishnamoorthy S, Akyol F, Moseley MW, Armstrong AM, Rajan S. Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs Applied Physics Express. 9. DOI: 10.7567/Apex.9.052102 |
0.608 |
|
| 2016 |
Bhardwaj S, Nahar NK, Rajan S, Volakis JL. Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model Ieee Transactions On Electron Devices. 63: 990-996. DOI: 10.1109/Ted.2015.2512912 |
0.386 |
|
| 2016 |
Zhang Y, Krishnamoorthy S, Akyol F, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes Applied Physics Letters. 109: 191105. DOI: 10.1063/1.4967698 |
0.639 |
|
| 2016 |
Krishnamoorthy S, Lee EW, Lee CH, Zhang Y, McCulloch WD, Johnson JM, Hwang J, Wu Y, Rajan S. High current density 2D/3D MoS2/GaN Esaki tunnel diodes Applied Physics Letters. 109: 183505. DOI: 10.1063/1.4966283 |
0.682 |
|
| 2016 |
Zúñiga-Pérez J, Consonni V, Lymperakis L, Kong X, Trampert A, Fernández-Garrido S, Brandt O, Renevier H, Keller S, Hestroffer K, Wagner MR, Reparaz JS, Akyol F, Rajan S, Rennesson S, et al. Polarity in GaN and ZnO: Theory, measurement, growth, and devices Applied Physics Reviews. 3: 41303. DOI: 10.1063/1.4963919 |
0.411 |
|
| 2016 |
Bajaj S, Akyol F, Krishnamoorthy S, Zhang Y, Rajan S. AlGaN channel field effect transistors with graded heterostructure ohmic contacts Applied Physics Letters. 109: 133508. DOI: 10.1063/1.4963860 |
0.683 |
|
| 2016 |
Zhang Y, Krishnamoorthy S, Akyol F, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions Applied Physics Letters. 109: 121102. DOI: 10.1063/1.4962900 |
0.673 |
|
| 2016 |
Akyol F, Krishnamoorthy S, Zhang Y, Johnson J, Hwang J, Rajan S. Erratum: “Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance” [Appl. Phys. Lett. 108, 131103 (2016)] Applied Physics Letters. 109: 109901. DOI: 10.1063/1.4961678 |
0.605 |
|
| 2016 |
Bhardwaj S, Rajan S, Volakis JL. Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)] Journal of Applied Physics. 120: 049901. DOI: 10.1063/1.4960091 |
0.345 |
|
| 2016 |
Bhardwaj S, Rajan S, Volakis JL. Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors Journal of Applied Physics. 119. DOI: 10.1063/1.4950795 |
0.318 |
|
| 2016 |
Yang Z, Zhang Y, Krishnamoorthy S, Nath DN, Khurgin JB, Rajan S. Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter Applied Physics Letters. 108: 192101. DOI: 10.1063/1.4949489 |
0.676 |
|
| 2016 |
Akyol F, Krishnamoorthy S, Zhang Y, Johnson J, Hwang J, Rajan S. Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance Applied Physics Letters. 108. DOI: 10.1063/1.4944998 |
0.656 |
|
| 2016 |
Bhardwaj S, Sensale-Rodriguez B, Xing HG, Rajan S, Volakis JL. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors Journal of Applied Physics. 119. DOI: 10.1063/1.4939076 |
0.543 |
|
| 2016 |
Mishra U, Huffaker D, Choquette K, Palacios T, Matioli E, Myers R, Rajan S, Wang H. Compound Semiconductors Physica Status Solidi (a) Applications and Materials Science. 213: 850. DOI: 10.1002/Pssa.201670627 |
0.622 |
|
| 2015 |
Akyol F, Krishnamoorthy S, Zhang Y, Rajan S. GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions Applied Physics Express. 8. DOI: 10.7567/Apex.8.082103 |
0.659 |
|
| 2015 |
Bajaj S, Hung TH, Akyol F, Krishnamoorthy S, Khandaker S, Armstrong A, Allerman A, Rajan S. Power switching transistors based on GaN and AlGaN channels Wipda 2015 - 3rd Ieee Workshop On Wide Bandgap Power Devices and Applications. 16-20. DOI: 10.1109/WiPDA.2015.7369292 |
0.344 |
|
| 2015 |
Yang Z, Nath DN, Zhang Y, Khurgin JB, Rajan S. Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors Ieee Electron Device Letters. 36: 436-438. DOI: 10.1109/Led.2015.2413934 |
0.465 |
|
| 2015 |
Park PS, Krishnamoorthy S, Bajaj S, Nath DN, Rajan S. Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs Ieee Electron Device Letters. 36: 226-228. DOI: 10.1109/Led.2015.2394503 |
0.652 |
|
| 2015 |
Khurgin JB, Bajaj S, Rajan S. Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride Applied Physics Letters. 107. DOI: 10.1063/1.4938745 |
0.374 |
|
| 2015 |
Lee CH, McCulloch W, Lee EW, Ma L, Krishnamoorthy S, Hwang J, Wu Y, Rajan S. Transferred large area single crystal MoS2 field effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4934941 |
0.625 |
|
| 2015 |
Bajaj S, Shoron OF, Park PS, Krishnamoorthy S, Akyol F, Hung TH, Reza S, Chumbes EM, Khurgin J, Rajan S. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors Applied Physics Letters. 107. DOI: 10.1063/1.4933181 |
0.662 |
|
| 2015 |
Lee EW, Lee CH, Paul PK, Ma L, McCulloch WD, Krishnamoorthy S, Wu Y, Arehart AR, Rajan S. Layer-transferred MoS2/GaN PN diodes Applied Physics Letters. 107. DOI: 10.1063/1.4930234 |
0.676 |
|
| 2015 |
Kornblum L, Jin EN, Shoron O, Boucherit M, Rajan S, Ahn CH, Walker FJ. Electronic transport of titanate heterostructures and their potential as channels on (001) Si Journal of Applied Physics. 118: 105301. DOI: 10.1063/1.4930140 |
0.447 |
|
| 2015 |
Zhang Y, Krishnamoorthy S, Johnson JM, Akyol F, Allerman A, Moseley MW, Armstrong A, Hwang J, Rajan S. Interband tunneling for hole injection in III-nitride ultraviolet emitters Applied Physics Letters. 106. DOI: 10.1063/1.4917529 |
0.699 |
|
| 2015 |
Arulkumaran S, Ng GI, Manoj Kumar CM, Ranjan K, Teo KL, Shoron OF, Rajan S, Bin Dolmanan S, Tripathy S. Electron velocity of 6 × 107cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906970 |
0.476 |
|
| 2015 |
Yang Z, Zhang Y, Nath DN, Khurgin JB, Rajan S. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier Applied Physics Letters. 106: 032101. DOI: 10.1063/1.4906287 |
0.499 |
|
| 2015 |
Gür E, Akyol F, Krishnamoorthy S, Rajan S, Ringel SA. Deep level defects in N-rich and In-rich InxGa1-XN: In composition dependence Superlattices and Microstructures. DOI: 10.1016/J.Spmi.2016.05.009 |
0.637 |
|
| 2014 |
Krishnamoorthy S, Akyol F, Rajan S. III-nitride tunnel junctions for efficient solid state lighting Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2039382 |
0.642 |
|
| 2014 |
Hung TH, Park PS, Krishnamoorthy S, Nath DN, Rajan S. Interface charge engineering for enhancement-mode GaN MISHEMTs Ieee Electron Device Letters. 35: 312-314. DOI: 10.1109/Led.2013.2296659 |
0.642 |
|
| 2014 |
Bajaj S, Hung T, Akyol F, Nath D, Rajan S. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage Applied Physics Letters. 105: 263503. DOI: 10.1063/1.4905323 |
0.413 |
|
| 2014 |
Lee EW, Ma L, Nath DN, Lee CH, Arehart A, Wu Y, Rajan S. Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions Applied Physics Letters. 105: 203504. DOI: 10.1063/1.4901048 |
0.431 |
|
| 2014 |
Yang Z, Nath D, Rajan S. Negative differential resistance in GaN tunneling hot electron transistors Applied Physics Letters. 105: 202111. DOI: 10.1063/1.4900780 |
0.435 |
|
| 2014 |
Krishnamoorthy S, Akyol F, Rajan S. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4897342 |
0.678 |
|
| 2014 |
Ma L, Nath DN, Lee EW, Lee CH, Yu M, Arehart A, Rajan S, Wu Y. Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1 Applied Physics Letters. 105: 72105. DOI: 10.1063/1.4893143 |
0.407 |
|
| 2014 |
Ramesh P, Krishnamoorthy S, Rajan S, Washington GN. Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4883890 |
0.651 |
|
| 2014 |
Boucherit M, Shoron O, Jackson CA, Cain TA, Buffon MLC, Polchinski C, Stemmer S, Rajan S. Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures Applied Physics Letters. 104: 182904. DOI: 10.1063/1.4875796 |
0.448 |
|
| 2014 |
Hung T, Sasaki K, Kuramata A, Nath DN, Park PS, Polchinski C, Rajan S. Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3 Applied Physics Letters. 104: 162106. DOI: 10.1063/1.4873546 |
0.364 |
|
| 2014 |
Laskar MR, Nath DN, Ma L, Lee EW, Lee CH, Kent T, Yang Z, Mishra R, Roldan MA, Idrobo JC, Pantelides ST, Pennycook SJ, Myers RC, Wu Y, Rajan S. P-type doping of MoS2 thin films using Nb Applied Physics Letters. 104. DOI: 10.1063/1.4867197 |
0.648 |
|
| 2013 |
Krishnamoorthy S, Kent TF, Yang J, Park PS, Myers RC, Rajan S. GdN nanoisland-based GaN tunnel junctions. Nano Letters. 13: 2570-5. PMID 23662669 DOI: 10.1021/Nl4006723 |
0.762 |
|
| 2013 |
Su M, Chen C, Rajan S. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems Semiconductor Science and Technology. 28: 074012. DOI: 10.1088/0268-1242/28/7/074012 |
0.452 |
|
| 2013 |
Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009 |
0.793 |
|
| 2013 |
Rajan S, Jena D. Gallium nitride electronics Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/070301 |
0.596 |
|
| 2013 |
Yang J, Cui S, Ma TP, Hung TH, Nath D, Krishnamoorthy S, Rajan S. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 103. DOI: 10.1063/1.4834698 |
0.666 |
|
| 2013 |
Yang J, Cui S, Ma TP, Hung TH, Nath D, Krishnamoorthy S, Rajan S. A study of electrically active traps in AlGaN/GaN high electron mobility transistor Applied Physics Letters. 103. DOI: 10.1063/1.4826922 |
0.671 |
|
| 2013 |
Mazumder B, Esposto M, Hung TH, Mates T, Rajan S, Speck JS. Characterization of a dielectric/GaN system using atom probe tomography Applied Physics Letters. 103: 151601. DOI: 10.1063/1.4824211 |
0.371 |
|
| 2013 |
Akyol F, Krishnamoorthy S, Rajan S. Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop Applied Physics Letters. 103. DOI: 10.1063/1.4819737 |
0.68 |
|
| 2013 |
Nath DN, Yang ZC, Lee CY, Park PS, Wu YR, Rajan S. Unipolar vertical transport in GaN/AlGaN/GaN heterostructures Applied Physics Letters. 103. DOI: 10.1063/1.4813309 |
0.342 |
|
| 2013 |
Laskar MR, Ma L, Kannappan S, Sung Park P, Krishnamoorthy S, Nath DN, Lu W, Wu Y, Rajan S. Large area single crystal (0001) oriented MoS2 Applied Physics Letters. 102. DOI: 10.1063/1.4811410 |
0.613 |
|
| 2013 |
Boucherit M, Shoron OF, Cain TA, Jackson CA, Stemmer S, Rajan S. Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4811273 |
0.441 |
|
| 2013 |
Park PS, Reddy KM, Nath DN, Yang Z, Padture NP, Rajan S. Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion Applied Physics Letters. 102. DOI: 10.1063/1.4801940 |
0.437 |
|
| 2013 |
Krishnamoorthy S, Akyol F, Park PS, Rajan S. Low resistance GaN/InGaN/GaN tunnel junctions Applied Physics Letters. 102. DOI: 10.1063/1.4796041 |
0.686 |
|
| 2013 |
Hung TH, Krishnamoorthy S, Esposto M, Neelim Nath D, Sung Park P, Rajan S. Interface charge engineering at atomic layer deposited dielectric/III- nitride interfaces Applied Physics Letters. 102. DOI: 10.1063/1.4793483 |
0.641 |
|
| 2013 |
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010 |
0.815 |
|
| 2013 |
Kim H, Nath D, Rajan S, Lu W. Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors Journal of Electronic Materials. 42: 10-14. DOI: 10.1007/S11664-012-2109-3 |
0.499 |
|
| 2012 |
Carnevale SD, Kent TF, Phillips PJ, Mills MJ, Rajan S, Myers RC. Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. Nano Letters. 12: 915-20. PMID 22268600 DOI: 10.1021/Nl203982P |
0.654 |
|
| 2012 |
Carnevale SD, Kent TF, Phillips PJ, Golam Sarwar ATM, Klie RF, Rajan S, Myers RC. Graded nanowire ultraviolet LEDs by polarization engineering Proceedings of Spie - the International Society For Optical Engineering. 8467. DOI: 10.1117/12.970450 |
0.638 |
|
| 2012 |
Park PS, Nath DN, Rajan S. Quantum capacitance in N-polar GaN/AlGaN/GaN heterostructures Ieee Electron Device Letters. 33: 991-993. DOI: 10.1109/Led.2012.2196973 |
0.38 |
|
| 2012 |
Fang T, Wang R, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance of GaN transistors Ieee Electron Device Letters. 33: 709-711. DOI: 10.1109/Led.2012.2187169 |
0.632 |
|
| 2012 |
Ramesh P, Krishnamoorthy S, Rajan S, Washington GN. Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications Smart Materials and Structures. 21. DOI: 10.1088/0964-1726/21/9/094003 |
0.651 |
|
| 2012 |
Stemmer S, Chobpattana V, Rajan S. Frequency dispersion in III-V metal-oxide-semiconductor capacitors Applied Physics Letters. 100. DOI: 10.1063/1.4724330 |
0.359 |
|
| 2012 |
Nath DN, Park PS, Esposto M, Brown D, Keller S, Mishra UK, Rajan S. “Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]” Journal of Applied Physics. 111: 99901. DOI: 10.1063/1.4711074 |
0.302 |
|
| 2012 |
Akyol F, Nath DN, Krishnamoorthy S, Park PS, Rajan S. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.3694967 |
0.666 |
|
| 2012 |
Nath DN, Park PS, Esposto M, Brown D, Keller S, Mishra UK, Rajan S. Polarization engineered 1-dimensional electron gas arrays Journal of Applied Physics. 111. DOI: 10.1063/1.3687938 |
0.631 |
|
| 2012 |
Park PS, Nath DN, Krishnamoorthy S, Rajan S. Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization Applied Physics Letters. 100: 63507. DOI: 10.1063/1.3685483 |
0.674 |
|
| 2012 |
Lecce VD, Krishnamoorthy S, Esposto M, Hung T-, Chini A, Rajan S. Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al 2 O 3 -on-GaN MOS diodes Electronics Letters. 48: 347-348. DOI: 10.1049/El.2011.4046 |
0.605 |
|
| 2011 |
Akyol F, Nath DN, Gür E, Park PS, Rajan S. N-polar III-nitride green (540 nm) light emitting diode Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.052101 |
0.389 |
|
| 2011 |
Nath DN, Gür E, Ringel SA, Rajan S. Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar Inx Ga1-x N Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3562277 |
0.349 |
|
| 2011 |
Esposto M, Chini A, Rajan S. Analytical Model for Power Switching GaN-Based HEMT Design Ieee Transactions On Electron Devices. 58: 1456-1461. DOI: 10.1109/Ted.2011.2112771 |
0.43 |
|
| 2011 |
Park PS, Rajan S. Simulation of short-channel effects in N- and Ga-polar AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 58: 704-708. DOI: 10.1109/Ted.2010.2099121 |
0.372 |
|
| 2011 |
Moetakef P, Cain TA, Ouellette DG, Zhang JY, Klenov DO, Janotti A, Van De Walle CG, Rajan S, Allen SJ, Stemmer S. Electrostatic carrier doping of GdTiO 3/SrTiO 3 interfaces Applied Physics Letters. 99. DOI: 10.1063/1.3669402 |
0.432 |
|
| 2011 |
Krishnamoorthy S, Park PS, Rajan S. Demonstration of forward inter-band tunneling in GaN by polarization engineering Applied Physics Letters. 99. DOI: 10.1063/1.3666862 |
0.671 |
|
| 2011 |
Gür E, Zhang Z, Krishnamoorthy S, Rajan S, Ringel SA. Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)] Applied Physics Letters. 99: 229906. DOI: 10.1063/1.3666222 |
0.56 |
|
| 2011 |
Hung T, Esposto M, Rajan S. Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors Applied Physics Letters. 99: 162104. DOI: 10.1063/1.3653805 |
0.456 |
|
| 2011 |
Son J, Rajan S, Stemmer S, James Allen S. A heterojunction modulation-doped Mott transistor Journal of Applied Physics. 110. DOI: 10.1063/1.3651612 |
0.413 |
|
| 2011 |
Esposto M, Krishnamoorthy S, Nath DN, Bajaj S, Hung T, Rajan S. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride Applied Physics Letters. 99: 133503. DOI: 10.1063/1.3645616 |
0.655 |
|
| 2011 |
Gür E, Zhang Z, Krishnamoorty S, Rajan S, Ringel SA. Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies Applied Physics Letters. 99. DOI: 10.1063/1.3631678 |
0.386 |
|
| 2011 |
Mishra R, Restrepo OD, Rajan S, Windl W. First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures Applied Physics Letters. 98: 232114. DOI: 10.1063/1.3598399 |
0.349 |
|
| 2010 |
Ramesh P, Krishnamoorthy S, Park PS, Rajan S, Washington GN. Distributed intelligence using gallium nitride based active devices Proceedings of Spie - the International Society For Optical Engineering. 7643. DOI: 10.1117/12.847919 |
0.662 |
|
| 2010 |
Yang CK, Roblin P, Groote FD, Ringel SA, Rajan S, Teyssier JP, Poblenz C, Pei Y, Speck J, Mishra UK. Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088. DOI: 10.1109/Tmtt.2010.2045452 |
0.673 |
|
| 2010 |
Krishnamoorthy S, Nath DN, Akyol F, Park PS, Esposto M, Rajan S. Polarization-engineered GaN/InGaN/GaN tunnel diodes Applied Physics Letters. 97. DOI: 10.1063/1.3517481 |
0.702 |
|
| 2010 |
Kolluri S, Keller S, Brown D, Gupta G, Mishra UK, DenBaars SP, Rajan S. Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] Journal of Applied Physics. 108: 119902. DOI: 10.1063/1.3514587 |
0.802 |
|
| 2010 |
Nath DN, Keller S, Hsieh E, DenBaars SP, Mishra UK, Rajan S. Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure Applied Physics Letters. 97: 162106. DOI: 10.1063/1.3505319 |
0.436 |
|
| 2010 |
Kolluri S, Keller S, Brown D, Gupta G, Rajan S, DenBaars SP, Mishra UK. Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates Journal of Applied Physics. 108: 74502. DOI: 10.1063/1.3488641 |
0.813 |
|
| 2010 |
Nath DN, Gür E, Ringel SA, Rajan S. Molecular beam epitaxy of N-polar InGaN Applied Physics Letters. 97. DOI: 10.1063/1.3478226 |
0.348 |
|
| 2010 |
Tripathi N, Jindal V, Shahedipour-Sandvik F, Rajan S, Vert A. Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Solid-State Electronics. 54: 1291-1294. DOI: 10.1016/J.Sse.2010.06.008 |
0.433 |
|
| 2009 |
Tamboli AC, Schmidt MC, Rajan S, Speck JS, Mishra UK, Denbaars SP, Hu EL. Smooth top-down photoelectrochemical etching of m -plane GaN Journal of the Electrochemical Society. 156: H47-H51. DOI: 10.1149/1.3005978 |
0.363 |
|
| 2009 |
Fujiwara T, Rajan S, Keller S, Higashiwaki M, Speck JS, DenBaars SP, Mishra UK. Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors Applied Physics Express. 2: 11001. DOI: 10.1143/Apex.2.011001 |
0.398 |
|
| 2009 |
Pei Y, Rajan S, Higashiwaki M, Chen Z, DenBaars SP, Mishra UK. Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 30: 313-315. DOI: 10.1109/Led.2009.2012444 |
0.667 |
|
| 2009 |
Brown DF, Rajan S, Keller S, Hsieh Y, DenBaars SP, Mishra UK. Electron transport in nitrogen-polar high electron mobility transistors Physica Status Solidi (C). 6: S960-S963. DOI: 10.1002/Pssc.200880799 |
0.475 |
|
| 2008 |
Imer B, Haskell B, Rajan S, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) Journal of Materials Research. 23: 551-555. DOI: 10.1557/Jmr.2008.0069 |
0.444 |
|
| 2008 |
Raman A, Dasgupta S, Rajan S, Speck JS, Mishra UK. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit Japanese Journal of Applied Physics. 47: 3359-3361. DOI: 10.1143/Jjap.47.3359 |
0.703 |
|
| 2008 |
Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101 |
0.8 |
|
| 2008 |
Rajan S, Mishra UK, Palacios T. AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS International Journal of High Speed Electronics and Systems. 18: 913-922. DOI: 10.1142/S0129156408005874 |
0.429 |
|
| 2008 |
Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543 |
0.836 |
|
| 2008 |
Keller S, Suh CS, Fichtenbaum NA, Furukawa M, Chu R, Chen Z, Vijayraghavan K, Rajan S, Denbaars SP, Speck JS, Mishra UK. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures Journal of Applied Physics. 104. DOI: 10.1063/1.3006132 |
0.795 |
|
| 2008 |
Brown DF, Rajan S, Keller S, Hsieh Y, DenBaars SP, Mishra UK. Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress Applied Physics Letters. 93: 42104. DOI: 10.1063/1.2965483 |
0.431 |
|
| 2008 |
Nidhi, Rajan S, Keller S, Wu F, DenBaars SP, Speck JS, Mishra UK. Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors Journal of Applied Physics. 103: 124508. DOI: 10.1063/1.2942394 |
0.516 |
|
| 2008 |
Keller S, Suh CS, Chen Z, Chu R, Rajan S, Fichtenbaum NA, Furukawa M, DenBaars SP, Speck JS, Mishra UK. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838214 |
0.806 |
|
| 2008 |
Vert AV, Rajan S. Properties of oxide deposited on c-plane AlGaN/GaN heterostructure Electronics Letters. 44: 773-774. DOI: 10.1049/El:20080839 |
0.473 |
|
| 2008 |
Imer B, Schmidt M, Haskell B, Rajan S, Zhong B, Kim K, Wu F, Mates T, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) Physica Status Solidi (a) Applications and Materials Science. 205: 1705-1712. DOI: 10.1002/Pssa.200723403 |
0.488 |
|
| 2007 |
Rajan S, Chini A, Wong MH, Speck JS, Mishra UK. N-polar GaN∕AlGaN∕GaN high electron mobility transistors Journal of Applied Physics. 102: 44501. DOI: 10.1063/1.2769950 |
0.525 |
|
| 2007 |
Wong MH, Rajan S, Chu RM, Palacios T, Suh CS, McCarthy LS, Keller S, Speck JS, Mishra UK. N-face high electron mobility transistors with a GaN-spacer Physica Status Solidi (a) Applications and Materials Science. 204: 2049-2053. DOI: 10.1002/Pssa.200674879 |
0.78 |
|
| 2006 |
Recht F, McCarthy L, Rajan S, Chakraborty A, Poblenz C, Corrion A, Speck JS, Mishra UK. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature Ieee Electron Device Letters. 27: 205-207. DOI: 10.1109/Led.2006.870419 |
0.8 |
|
| 2006 |
Corrion A, Poblenz C, Waltereit P, Palacios T, Rajan S, Mishra UK, Speck JS. Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy Ieice Transactions On Electronics. 89: 906-912. DOI: 10.1093/Ietele/E89-C.7.906 |
0.487 |
|
| 2006 |
Simon J, Wang A, Xing H, Rajan S, Jena D. Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2168253 |
0.565 |
|
| 2006 |
Rajan S, DenBaars SP, Mishra UK, Xing H(, Jena D. Electron mobility in graded AlGaN alloys Applied Physics Letters. 88: 42103. DOI: 10.1063/1.2165190 |
0.554 |
|
| 2005 |
Simon J, Wang K, Xing H, Jena D, Rajan S. Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff17-04 |
0.606 |
|
| 2005 |
Rajan S, Wong M, Fu Y, Wu F, Speck JS, Mishra UK. Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures Japanese Journal of Applied Physics. 44. DOI: 10.1143/Jjap.44.L1478 |
0.46 |
|
| 2005 |
Poblenz C, Waltereit P, Rajan S, Mishra UK, Speck JS, Chin P, Smorchkova I, Heying B. Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Journal of Vacuum Science & Technology B. 23: 1562-1567. DOI: 10.1116/1.1943443 |
0.473 |
|
| 2005 |
Palacios T, Rajan S, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK. Influence of the dynamic access resistance in the gm and f T linearity of AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 52: 2117-2122. DOI: 10.1109/Ted.2005.856180 |
0.629 |
|
| 2005 |
Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars SP, Speck JS, Mishra UK. High-power AlGaN/GaN HEMTs for Ka-band applications Ieee Electron Device Letters. 26: 781-783. DOI: 10.1109/Led.2005.857701 |
0.644 |
|
| 2005 |
Yu H, McCarthy L, Rajan S, Keller S, Denbaars S, Speck J, Mishra U. Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts Ieee Electron Device Letters. 26: 283-285. DOI: 10.1109/Led.2005.846583 |
0.808 |
|
| 2004 |
Waltereit P, Poblenz C, Rajan S, Wu F, Mishra UK, Speck JS. Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors Japanese Journal of Applied Physics. 43: 1520. DOI: 10.1143/Jjap.43.L1520 |
0.451 |
|
| 2004 |
Rajan S, Chakraborty A, Mishra UK, Poblenz C, Waltereit P, Speck JS. MBE-grown AlGaN/GaN HEMTs on SiC International Journal of High Speed Electronics and Systems. 14: 732-737. DOI: 10.1142/S0129156404002752 |
0.664 |
|
| 2004 |
Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra UK, Speck JS. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1145-1149. DOI: 10.1116/1.1752907 |
0.37 |
|
| 2004 |
Rajan S, Waltereit P, Poblenz C, Heikman SJ, Green DS, Speck JS, Mishra UK. Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE Ieee Electron Device Letters. 25: 247-249. DOI: 10.1109/Led.2004.826977 |
0.652 |
|
| 2004 |
Rajan S, Xing H, DenBaars S, Mishra UK, Jena D. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications Applied Physics Letters. 84: 1591-1593. DOI: 10.1063/1.1652254 |
0.653 |
|
| 2003 |
Rajan SI, Sarma PS, Mishra US. Demography of Indian aging, 2001-2051. Journal of Aging & Social Policy. 15: 11-30. PMID 14696687 DOI: 10.1300/J031v15n02_02 |
0.375 |
|
| 2001 |
Rajan SI, Mishra US, Sarma PS. Health concerns among India's elderly. International Journal of Aging & Human Development. 53: 181-94. PMID 11866377 |
0.385 |
|
| 1998 |
Mishra US, Ramanathan M, Rajan SI. Induced abortion potential among Indian women. Social Biology. 45: 278-88. PMID 10085740 |
0.387 |
|
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