| Year |
Citation |
Score |
| 2020 |
Xu C, Kolluri SK, Endo K, Banerjee K. Correction to “Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability” Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 39: 277-277. DOI: 10.1109/Tcad.2019.2944583 |
0.327 |
|
| 2014 |
Killat N, Uren MJ, Keller S, Kolluri S, Mishra UK, Kuball M. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors Applied Physics Letters. 105. DOI: 10.1063/1.4892449 |
0.74 |
|
| 2013 |
Xu C, Kolluri SK, Endo K, Banerjee K. Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 32: 1045-1058. DOI: 10.1109/Tcad.2013.2248194 |
0.356 |
|
| 2013 |
Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009 |
0.486 |
|
| 2012 |
Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/Led.2012.2188710 |
0.548 |
|
| 2012 |
Kolluri S, Keller S, Denbaars SP, Mishra UK. Microwave power performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC substrates using an Al 2O 3 etch-stop technology Ieee Electron Device Letters. 33: 44-46. DOI: 10.1109/Led.2011.2173458 |
0.655 |
|
| 2011 |
Kolluri S, Keller S, DenBaars SP, Mishra UK. N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate Ieee Electron Device Letters. 32: 635-637. DOI: 10.1109/Led.2011.2119462 |
0.612 |
|
| 2011 |
Kolluri S, Brown DF, Wong MH, Dasgupta S, Keller S, DenBaars SP, Mishra UK. RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation Ieee Electron Device Letters. 32: 134-136. DOI: 10.1109/Led.2010.2090410 |
0.637 |
|
| 2011 |
Umana-Membreno GA, Fehlberg TB, Kolluri S, Brown DF, Keller S, Mishra UK, Nener BD, Faraone L, Parish G. Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3595341 |
0.703 |
|
| 2011 |
Umana-Membreno GA, Fehlberg TB, Kolluri S, Brown DF, Parish G, Nener BD, Keller S, Mishra UK, Faraone L. Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates Microelectronic Engineering. 88: 1079-1082. DOI: 10.1016/J.Mee.2011.03.105 |
0.689 |
|
| 2010 |
Kolluri S, Keller S, Brown D, Gupta G, Mishra UK, DenBaars SP, Rajan S. Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] Journal of Applied Physics. 108: 119902. DOI: 10.1063/1.3514587 |
0.772 |
|
| 2010 |
Kolluri S, Keller S, Brown D, Gupta G, Rajan S, DenBaars SP, Mishra UK. Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates Journal of Applied Physics. 108: 74502. DOI: 10.1063/1.3488641 |
0.77 |
|
| 2009 |
Kolluri S, Pei Y, Keller S, Denbaars SP, Mishra UK. RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate Ieee Electron Device Letters. 30: 584-586. DOI: 10.1109/Led.2009.2018708 |
0.696 |
|
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