Wolfgang E. Windl, Dr. rer. nat. - Publications

Affiliations: 
1995-1996 Physics Arizona State University, Tempe, AZ, United States 
 1996-1997 T-Division Los Alamos National Laboratory, Los Alamos, NM, United States 
 1997-2001 Computational Materials Group Motorola-SPS 
 2001- Materials Science and Engineering Ohio State University, Columbus, Columbus, OH 
Area:
Computational Materials Science

118 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Nyby C, Guo X, Saal JE, Chien SC, Gerard AY, Ke H, Li T, Lu P, Oberdorfer C, Sahu S, Li S, Taylor CD, Windl W, Scully JR, Frankel GS. Electrochemical metrics for corrosion resistant alloys. Scientific Data. 8: 58. PMID 33574339 DOI: 10.1038/s41597-021-00840-y  0.666
2021 Shcherbakov D, Stepanov P, Memaran S, Wang Y, Xin Y, Yang J, Wei K, Baumbach R, Zheng W, Watanabe K, Taniguchi T, Bockrath M, Smirnov D, Siegrist T, Windl W, et al. Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor. Science Advances. 7. PMID 33514554 DOI: 10.1126/sciadv.abe2892  0.585
2020 Wang Y, Koster KG, Ochs AM, Scudder MR, Heremans JP, Windl W, Goldberger JE. The Chemical Design Principles for Axis-dependent Conduction Polarity. Journal of the American Chemical Society. PMID 31961672 DOI: 10.1021/Jacs.9B10626  0.637
2020 Redemann BWY, Scudder MR, Weber D, Wang Y, Windl W, Goldberger JE. Synthesis, structural, and electronic properties of Sr1−xCaxPdAs Inorganic Chemistry Frontiers. 7: 2833-2839. DOI: 10.1039/D0Qi00284D  0.639
2020 Asel TJ, Huey WLB, Noesges B, Molotokaite E, Chien S, Wang Y, Barnum A, McPherson C, Jiang S, Shields S, D’Andrea C, Windl W, Cinquanta E, Brillson LJ, Goldberger JE. Influence of Surface Chemistry on Water Absorption in Functionalized Germanane Chemistry of Materials. 32: 1537-1544. DOI: 10.1021/Acs.Chemmater.9B04632  0.595
2020 Qi J, Oberdorfer C, Marquis E, Windl W. Full “Ab-Initio” Simulation of Field Evaporation of Samples with Grain Boundaries Microscopy and Microanalysis. 26: 2878-2879. DOI: 10.1017/S1431927620023077  0.681
2020 Chmielewski A, Deng S, Moradifar P, Miao L, Lopez KA, Mauze A, Zhang Y, Speck J, Windl W, Alem N. Point Defect and Their Influence on the Atomic and Electronic Structure of β-(AlxGa1-x)2O3 Alloys by STEM-EELS Microscopy and Microanalysis. 1-2. DOI: 10.1017/S1431927620015317  0.311
2019 Liu P, Tian H, Windl W, Gu G, Duscher G, Wu Y, Zhao M, Guo J, Xu B, Liu L. Direct imaging of the nitrogen-rich edge in monolayer hexagonal boron nitride and its band structure tuning. Nanoscale. PMID 31642456 DOI: 10.1039/C9Nr07147D  0.356
2019 He B, Wang Y, Arguilla MQ, Cultrara ND, Scudder MR, Goldberger JE, Windl W, Heremans JP. The Fermi surface geometrical origin of axis-dependent conduction polarity in layered materials. Nature Materials. PMID 30886402 DOI: 10.1038/S41563-019-0309-4  0.635
2019 Zheng Y, Weiss EJ, Antolin N, Windl W, Heremans JP. Magnon drag effect in Fe-Co alloys Journal of Applied Physics. 126: 125107. DOI: 10.1063/1.5117165  0.775
2019 Trout AH, Wang Y, Esser BD, Jiang S, Goldberger JE, Windl W, McComb DW. Identification of turbostratic twisting in germanane Journal of Materials Chemistry C. 7: 10092-10097. DOI: 10.1039/C9Tc02064K  0.65
2019 He Y, Perea DE, Mao SX, Wang C, Withrow T, Oberdorfer C, Windl W. In situ HR-TEM and Simulation of Si Field Emitter Tips under Field Evaporation Microscopy and Microanalysis. 25: 308-309. DOI: 10.1017/S1431927619002277  0.763
2019 Oberdorfer C, Withrow T, Marquis EA, Windl W. Atomistic-Simulation Based Modeling of Atom Probe Tomography Microscopy and Microanalysis. 25: 284-285. DOI: 10.1017/S1431927619002150  0.771
2019 Oberdorfer C, Windl W. Bond-order bond energy model for alloys Acta Materialia. 179: 406-413. DOI: 10.1016/J.Actamat.2019.08.048  0.726
2018 Shcherbakov DL, Stepanov P, Weber D, Wang Y, Hu J, Zhu Y, Watanabe K, Taniguchi T, Mao Z, Windl W, Goldberger JE, Bockrath M, Lau CN. Raman Spectroscopy, Photocatalytic Degradation and Stabilization of Atomically Thin Chromium Triiodide. Nano Letters. PMID 29863369 DOI: 10.1021/Acs.Nanolett.8B01131  0.625
2018 Amamou W, Pinchuk IV, Trout AH, Williams REA, Antolin N, Goad A, O’Hara DJ, Ahmed AS, Windl W, McComb DW, Kawakami RK. Magnetic proximity effect in Pt/CoFe2O4 bilayers Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.011401  0.762
2018 Chaleff ES, Antolin N, Windl W, Blue T. Ab-Initio Calculation of Spectral Absorption Coefficients in Molten Fluoride Salts with Metal Impurities Nuclear Technology. 204: 59-65. DOI: 10.1080/00295450.2018.1464288  0.781
2018 Asel TJ, Yanchenko E, Yang X, Jiang S, Krymowski K, Wang Y, Trout A, McComb DW, Windl W, Goldberger JE, Brillson LJ. Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane Applied Physics Letters. 113: 061110. DOI: 10.1063/1.5034460  0.77
2018 Cultrara ND, Wang Y, Arguilla MQ, Scudder MR, Jiang S, Windl W, Bobev S, Goldberger JE. Synthesis of 1T, 2H, and 6R Germanane Polytypes Chemistry of Materials. 30: 1335-1343. DOI: 10.1021/Acs.Chemmater.7B04990  0.608
2018 Oberdorfer C, Withrow T, Yu L, Fisher K, Marquis E, Windl W. Influence of surface relaxation on solute atoms positioning within atom probe tomography reconstructions Materials Characterization. 146: 324-335. DOI: 10.1016/J.Matchar.2018.05.014  0.784
2017 Withrow T, Oberdorfer C, Windl W, Marquis EA. Coupling Molecular Dynamics and Finite Element Simulations to Investigate the Nearest Neighbor Dependence of Field Evaporation Microscopy and Microanalysis. 23: 646-647. DOI: 10.1017/S1431927617003890  0.764
2017 Niu C, Windl W, Ghazisaeidi M. Multi-Cell Monte Carlo Relaxation method for predicting phase stability of alloys Scripta Materialia. 132: 9-12. DOI: 10.1016/J.Scriptamat.2017.01.001  0.306
2017 Wei C, Antolin N, Restrepo OD, Windl W, Zhao J. A general model for thermal and electrical conductivity of binary metallic systems Acta Materialia. 126: 272-279. DOI: 10.1016/J.Actamat.2016.12.047  0.785
2016 Smith TM, Esser BD, Antolin N, Carlsson A, Williams RE, Wessman A, Hanlon T, Fraser HL, Windl W, McComb DW, Mills MJ. Phase transformation strengthening of high-temperature superalloys. Nature Communications. 7: 13434. PMID 27874007 DOI: 10.1038/Ncomms13434  0.785
2016 Johnson JM, Im S, Windl W, Hwang J. Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy. Ultramicroscopy. 172: 17-29. PMID 27792913 DOI: 10.1016/J.Ultramic.2016.10.007  0.337
2016 Arguilla MQ, Katoch J, Krymowski K, Cultrara ND, Xu J, Xi X, Hanks A, Jiang S, Ross RD, Koch RJ, Ulstrup S, Bostwick A, Jozwiak CM, McComb DW, Rotenberg E, ... ... Windl W, et al. NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase. Acs Nano. PMID 27700035 DOI: 10.1021/Acsnano.6B04609  0.778
2016 Hunter AH, Araullo-Peters V, Gibbons M, Restrepo OD, Niezgoda SR, Windl W, Flores KM, Hofmann DC, Marquis EA. Three-dimensional imaging of shear bands in bulk metallic glass composites. Journal of Microscopy. PMID 27513447 DOI: 10.1111/Jmi.12443  0.668
2016 Jiang S, Krymowski K, Asel T, Arguilla MQ, Cultrara ND, Yanchenko E, Yang X, Brillson LJ, Windl W, Goldberger JE. Tailoring the Electronic Structure of Covalently Functionalized Germanane via the Interplay of Ligand Strain and Electronegativity Chemistry of Materials. 28: 8071-8077. DOI: 10.1021/Acs.Chemmater.6B04309  0.76
2015 Kłosowski MM, Friederichs RJ, Nichol R, Antolin N, Carzaniga R, Windl W, Best SM, Shefelbine SJ, McComb DW, Porter AE. Probing carbonate in bone forming minerals on the nanometre scale. Acta Biomaterialia. 20: 129-39. PMID 25848725 DOI: 10.1016/J.Actbio.2015.03.039  0.759
2015 Jin H, Restrepo OD, Antolin N, Boona SR, Windl W, Myers RC, Heremans JP. Phonon-induced diamagnetic force and its effect on the lattice thermal conductivity. Nature Materials. 14: 601-6. PMID 25799325 DOI: 10.1038/Nmat4247  0.782
2015 Agrawal A, Mishra R, Ward L, Flores KM, Windl W. Corrigendum: An embedded atom method potential of beryllium (Modelling Simul. Mater. Sci. Eng. 21 085001) Modelling and Simulation in Materials Science and Engineering. 23. DOI: 10.1088/0965-0393/23/6/069501  0.769
2015 Yao L, Withrow T, Restrepo OD, Windl W, Marquis EA. Effects of the local structure dependence of evaporation fields on field evaporation behavior Applied Physics Letters. 107. DOI: 10.1063/1.4937454  0.704
2015 Perkins J, Foster GM, Myer M, Mehra S, Chauveau JM, Hierro A, Redondo-Cubero A, Windl W, Brillson LJ. Impact of Mg content on native point defects in MgxZn1-xO (0 ≤ x ≤ 0.56) Apl Materials. 3. DOI: 10.1063/1.4915491  0.321
2015 Williams REA, Smith T, Esser BD, Antolin N, Windl W, McComb DW, Mills MJ, Fraser HL. Super-X EDS Characterization of Chemical Segregation within a Superlattice Extrinsic Stacking Fault of a Ni- based Superalloy Microscopy and Microanalysis. 21: 493-494. DOI: 10.1017/S1431927615003268  0.755
2015 Smith TM, Esser BD, Antolin N, Viswanathan GB, Hanlon T, Wessman A, Mourer D, Windl W, McComb DW, Mills MJ. Segregation and η phase formation along stacking faults during creep at intermediate temperatures in a Ni-based superalloy Acta Materialia. 100: 19-31. DOI: 10.1016/J.Actamat.2015.08.053  0.781
2014 Jiang S, Butler S, Bianco E, Restrepo OD, Windl W, Goldberger JE. Improving the stability and optical properties of germanane via one-step covalent methyl-termination. Nature Communications. 5: 3389. PMID 24566761 DOI: 10.1038/Ncomms4389  0.334
2014 Restrepo OD, Krymowski KE, Goldberger J, Windl W. A first principles method to simulate electron mobilities in 2D materials New Journal of Physics. 16. DOI: 10.1088/1367-2630/16/10/105009  0.313
2014 Restrepo OD, Mishra R, Goldberger JE, Windl W. Tunable gaps and enhanced mobilities in strain-engineered silicane Journal of Applied Physics. 115. DOI: 10.1063/1.4860988  0.586
2013 Morrow R, Mishra R, Restrepo OD, Ball MR, Windl W, Wurmehl S, Stockert U, Büchner B, Woodward PM. Independent ordering of two interpenetrating magnetic sublattices in the double perovskite Sr2CoOsO6. Journal of the American Chemical Society. 135: 18824-30. PMID 24246057 DOI: 10.1021/Ja407342W  0.749
2013 Gohlke D, Mishra R, Restrepo OD, Lee D, Windl W, Gupta J. Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces. Nano Letters. 13: 2418-22. PMID 23647308 DOI: 10.1021/Nl400305Q  0.563
2013 Bianco E, Butler S, Jiang S, Restrepo OD, Windl W, Goldberger JE. Stability and exfoliation of germanane: a germanium graphane analogue. Acs Nano. 7: 4414-21. PMID 23506286 DOI: 10.1021/Nn4009406  0.344
2013 Butler SZ, Hollen SM, Cao L, Cui Y, Gupta JA, Gutiérrez HR, Heinz TF, Hong SS, Huang J, Ismach AF, Johnston-Halperin E, Kuno M, Plashnitsa VV, Robinson RD, Ruoff RS, ... ... Windl W, et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. Acs Nano. 7: 2898-926. PMID 23464873 DOI: 10.1021/Nn400280C  0.301
2013 Ward L, Miracle D, Windl W, Senkov ON, Flores K. Structural evolution and kinetics in Cu-Zr metallic liquids from molecular dynamics simulations Physical Review B. 88. DOI: 10.1103/Physrevb.88.134205  0.668
2013 Agrawal A, Mishra R, Ward L, Flores KM, Windl W. An embedded atom method potential of beryllium Modelling and Simulation in Materials Science and Engineering. 21. DOI: 10.1088/0965-0393/21/8/085001  0.788
2013 Ko D, Zhao XW, Reddy KM, Restrepo OD, Mishra R, Lemberger TR, Beloborodov IS, Trivedi N, Padture NP, Windl W, Yang FY, Johnston-Halperin E. Defect states and disorder in charge transport in semiconductor nanowires Journal of Applied Physics. 114. DOI: 10.1063/1.4813494  0.52
2012 Chisholm MF, Duscher G, Windl W. Oxidation resistance of reactive atoms in graphene. Nano Letters. 12: 4651-5. PMID 22906097 DOI: 10.1021/Nl301952E  0.303
2012 Antolin N, Restrepo OD, Windl W. Fast Free Energy Calculations for Unstable High-Temperature Phases Physical Review B. 86. DOI: 10.1103/Physrevb.86.054119  0.782
2012 Mishra R, Soliz JR, Woodward PM, Windl W. Ca 2MnRuO 6: Magnetic order arising from chemical chaos Chemistry of Materials. 24: 2757-2763. DOI: 10.1021/Cm301007M  0.523
2012 Phillips P, Graef MD, Kovarik L, Agrawal A, Windl W, Mills M. Low angle ADF STEM defect imaging Microscopy and Microanalysis. 18: 676-677. DOI: 10.1017/S1431927612005235  0.5
2012 Williams R, Dixit M, Mishra R, Windl W, McComb D, Fraser H, Hauser A, Yang F, Meyers T, Woodward P. Comparative Study for Simulation of EELS Core Loss for Transition Metals in Double Perovskite Systems Microscopy and Microanalysis. 18: 308-309. DOI: 10.1017/S143192761200339X  0.514
2012 Phillips PJ, De Graef M, Kovarik L, Agrawal A, Windl W, Mills MJ. Atomic-resolution defect contrast in low angle annular dark-field STEM Ultramicroscopy. 116: 47-55. DOI: 10.1016/J.Ultramic.2012.03.013  0.561
2012 Uberuaga BP, Stuart SJ, Windl W, Masquelier MP, Voter AF. Fullerene and graphene formation from carbon nanotube fragments Computational and Theoretical Chemistry. 987: 115-121. DOI: 10.1016/J.Comptc.2011.11.030  0.653
2012 Mishra R, Restrepo OD, Kumar A, Windl W. Native point defects in binary InP semiconductors Journal of Materials Science. 47: 7482-7497. DOI: 10.1007/S10853-012-6595-8  0.628
2011 Mishra R, Restrepo OD, Rajan S, Windl W. First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures Applied Physics Letters. 98: 232114. DOI: 10.1063/1.3598399  0.558
2011 Nagpure SC, Babu SS, Bhushan B, Kumar A, Mishra R, Windl W, Kovarik L, Mills M. Local electronic structure of LiFePO4 nanoparticles in aged Li-ion batteries Acta Materialia. 59: 6917-6926. DOI: 10.1016/J.Actamat.2011.07.043  0.601
2011 Drabold D, Demkov A, Lewis JP, Ortega J, Windl W, Lindsay S. Front Cover: Large-scale simulations in materials science (Phys. Status Solidi B 9/2011) Physica Status Solidi (B). 248: n/a-n/a. DOI: 10.1002/Pssb.201190027  0.681
2010 Santos I, Castrillo P, Windl W, Drabold DA, Pelaz L, Marqués LA. Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.033203  0.561
2010 Mishra R, Restrepo OD, Woodward PM, Windl W. First-principles study of defective and nonstoichiometric Sr 2FeMoO6 Chemistry of Materials. 22: 6092-6102. DOI: 10.1021/Cm101587E  0.548
2009 Luo W, Windl W. First principles study of the structure and stability of carbynes Carbon. 47: 367-383. DOI: 10.1016/J.Carbon.2008.10.017  0.718
2009 Heinen R, Hackl K, Windl W, Wagner MF-. Microstructural evolution during multiaxial deformation of pseudoelastic NiTi studied by first-principles-based micromechanical modeling Acta Materialia. 57: 3856-3867. DOI: 10.1016/J.Actamat.2009.04.036  0.322
2008 Luo W, Ravichandran K, Windl W, Fonseca LRC. Ab Initio Modeling of Contact Structure Formation of Carbon Nanotubes and Its Effect on Electron Transport Mrs Proceedings. 1081. DOI: 10.1557/Proc-1081-P07-25  0.765
2008 Windl W. Concentration-Dependence of Self-Interstitial and Boron Diffusion in Silicon Mrs Proceedings. 1070. DOI: 10.1557/Proc-1070-E06-08  0.326
2008 Gupta N, Windl W. Ab-Initio Modeling of Arsenic Pile-Up and Deactivation at the Si/SiO 2 Interface Mrs Proceedings. 1070. DOI: 10.1557/Proc-1070-E06-03  0.343
2008 Santos I, Windl W, Pelaz L, Marqués LA. First Principles Study of Boron in Amorphous Silicon Mrs Proceedings. 1070. DOI: 10.1557/Proc-1070-E05-07  0.367
2008 Pei L, Duscher G, Steen C, Pichler P, Ryssel H, Napolitani E, De Salvador D, Piro AM, Terrasi A, Severac F, Cristiano F, Ravichandran K, Gupta N, Windl W. Detailed arsenic concentration profiles at Si/SiO2 interfaces Journal of Applied Physics. 104: 043507. DOI: 10.1063/1.2967713  0.604
2008 Steen C, Martinez-Limia A, Pichler P, Ryssel H, Paul S, Lerch W, Pei L, Duscher G, Severac F, Cristiano F, Windl W. Distribution and segregation of arsenic at theSiO2/Si interface Journal of Applied Physics. 104: 023518. DOI: 10.1063/1.2956700  0.327
2008 Windl W. Concentration dependence of self-interstitial and boron diffusion in silicon Applied Physics Letters. 92: 202104. DOI: 10.1063/1.2936081  0.327
2008 Windl W, Stumpf R. Charge of self-interstitials and boron-interstitial pairs as a function of doping concentration Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 154: 198-201. DOI: 10.1016/J.Mseb.2008.09.027  0.322
2008 Wagner MF-, Windl W. Lattice stability, elastic constants and macroscopic moduli of NiTi martensites from first principles Acta Materialia. 56: 6232-6245. DOI: 10.1016/J.Actamat.2008.08.043  0.311
2008 Bharathula A, Luo W, Windl W, Flores KM. Characterization of open volume regions in a simulated Cu-Zr metallic glass Metallurgical and Materials Transactions a: Physical Metallurgy and Materials Science. 39: 1779-1785. DOI: 10.1007/S11661-008-9503-8  0.735
2007 Steen C, Pichler P, Ryssel H, Pei L, Duscher G, Werner M, van den Berg JA, Windl W. Characterization of the Segregation of Arsenic at the Interface SiO2/Si Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F08-02  0.341
2007 Kim HJ, Windl W, Rigney D. Structure and chemical analysis of aluminum wear debris: Experiments and ab initio simulations Acta Materialia. 55: 6489-6498. DOI: 10.1016/J.Actamat.2007.08.013  0.31
2006 Windl W, Khorsandi B, Luo W, Blue TE. SiC Based Neutron Flux Monitors for Very High Temperature Nuclear Reactors Mrs Proceedings. 929. DOI: 10.1557/Proc-0929-Ii03-04  0.692
2006 Khorsandi B, Blue TE, Windl W, Kulisek J. TRIM modeling of displacement damage in SiC for monoenergetic neutrons Astm Special Technical Publication. 1490: 137-144. DOI: 10.1520/Jai100358  0.332
2005 Windl W. Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations Solid State Phenomena. 125-132. DOI: 10.4028/Www.Scientific.Net/Ssp.108-109.125  0.357
2005 Ravichandran K, Windl W. Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si(100)∕SiO2 interfaces Applied Physics Letters. 86: 152106. DOI: 10.1063/1.1900958  0.618
2005 Windl W. Ab initio assisted process modeling for Si-based nanoelectronic devices Materials Science and Engineering B-Advanced Functional Solid-State Materials. 124: 62-71. DOI: 10.1016/J.Mseb.2005.08.095  0.343
2005 Ravichandran K, Windl W. Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces Materials Science and Engineering B-Advanced Functional Solid-State Materials. 359-362. DOI: 10.1016/J.Mseb.2005.08.094  0.622
2005 Stoddard N, Duscher GJM, Windl W, Rozgonyi GA. A new understanding of near-threshold damage for 200 keV irradiation in silicon Journal of Materials Science. 40: 3639-3650. DOI: 10.1007/S10853-005-1059-Z  0.37
2005 Liu X, Windl W. Theoretical Study of Boron Clustering in Silicon Journal of Computational Electronics. 4: 203-219. DOI: 10.1007/S10825-005-5037-0  0.334
2004 Stoddard NG, Duscher G, Windl W, Rozgonyi GA. Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon Mrs Proceedings. 810. DOI: 10.1557/Proc-810-C3.9  0.382
2004 Windl W, Liang T, Lopatin S, Duscher G. Investigation of Nanostructured Germanium/Silicon Dioxide Interfaces Journal of Computational and Theoretical Nanoscience. 1: 286-295. DOI: 10.1166/Jctn.2004.030  0.531
2004 Windl W, Liang T, Lopatin S, Duscher G. Modeling and characterization of atomically sharp “perfect” Ge/SiO2 interfaces Materials Science and Engineering B-Advanced Functional Solid-State Materials. 114: 156-161. DOI: 10.1016/J.Mseb.2004.07.041  0.538
2004 Windl W. Diffusion in silicon and the predictive power of ab‐initio calculations Physica Status Solidi B-Basic Solid State Physics. 241: 2313-2318. DOI: 10.1002/Pssb.200404931  0.338
2003 Windl W, Liang T, Lopatin S, Duscher G. Atomistic Modeling of the Detailed Structure of Si/SiO2 Interfaces Using AIDATEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy) Microscopy and Microanalysis. 9: 826-827. DOI: 10.1017/S1431927603444139  0.519
2002 Liu X, Windl W, Masquelier MP. Ab-Initio Pseudopotential Calculations of Phosphorus Diffusion in Silicon Mrs Proceedings. 717. DOI: 10.1557/Proc-717-C4.7  0.305
2002 Uberuaga BP, Henkelman G, Jónsson H, Dunham ST, Windl W, Stumpf R. Theoretical studies of self-diffusion and dopant clustering in semiconductors Physica Status Solidi (B) Basic Research. 233: 24-30. DOI: 10.1002/1521-3951(200209)233:1<24::Aid-Pssb24>3.0.Co;2-5  0.643
2001 Liu C, Windl W, Borucki L, Lu S, Liu X. Ab-Initio Modeling of C-B Interactions In Si Mrs Proceedings. 669. DOI: 10.1557/Proc-669-J4.6  0.342
2001 Collins LA, Bickham SR, Kress JD, Mazevet S, Lenosky TJ, Troullier NJ, Windl W. Dynamical and optical properties of warm dense hydrogen Physical Review B. 63: 184110. DOI: 10.1103/Physrevb.63.184110  0.576
2001 Windl W, Stumpf R, Liu X-, Masquelier MP. Ab initio modeling study of boron diffusion in silicon Computational Materials Science. 21: 496-504. DOI: 10.1016/S0927-0256(01)00197-5  0.318
2000 Liu X, Windl W, Masquelier MP. Ab initio modeling of boron clustering in silicon Applied Physics Letters. 77: 2018-2020. DOI: 10.1063/1.1313253  0.301
1999 Fuentes-Cabrera M, Muñoz A, Windl W, Demkov AA, Sankey OF. Theoretical study of graphitic analogues of simple semiconductors Modelling and Simulation in Materials Science and Engineering. 7: 929-938. DOI: 10.1088/0965-0393/7/6/302  0.666
1998 Dong J, Sankey OF, Demkov AA, Ramachandran GK, Gryko J, McMillan P, Windl W. Theoretical Calculation of the Vibrational modes in Ge46 Clathrate and Related MxGayGe46-y Type Clathrates Mrs Proceedings. 545. DOI: 10.1557/Proc-545-443  0.734
1998 WINDL W, SANKEY OF. First–Principles Investigation of the Ordered Si 4c compound Mrs Proceedings. 535. DOI: 10.1557/Proc-535-299  0.535
1998 Windl W, Demkov AA. First-Principles Study of N Impurities in SiC Polytypes Mrs Proceedings. 510. DOI: 10.1557/Proc-510-181  0.573
1998 Windl W, Sankey OF, Menendez J. Theory of strain and electronic structure of Si 1-y C y and Si 1-x-y Ge x C y alloys Physical Review B. 57: 2431-2442. DOI: 10.1103/Physrevb.57.2431  0.529
1998 Collins L, Kress J, Kwon I, Windl W, Lenosky T, Troullier N, Bauer R. Quantum molecular dynamics simulations of dense matter Journal of Computer-Aided Materials Design. 5: 173-191. DOI: 10.1023/A:1008605601624  0.589
1998 Windl W, Lenosky TJ, Kress JD, Voter AF. First-principles investigation of radiation induced defects in Si and SiC Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 141: 61-65. DOI: 10.1016/S0168-583X(98)00082-2  0.722
1998 Sankey OF, Demkov AA, Windl W, Fritsch JH, Lewis JP, Fuentes-Cabrera M. The application of approximate density functionals to complex systems International Journal of Quantum Chemistry. 69: 327-340. DOI: 10.1002/(Sici)1097-461X(1998)69:3<327::Aid-Qua11>3.0.Co;2-#  0.649
1997 Windl W, Lenosky TJ, Kress JD, Voter AF. First-Principles Study of Point-Defect Production in Si and SiC Mrs Proceedings. 490. DOI: 10.1557/Proc-490-41  0.714
1997 Windl W, Kress JD, Voter AF, Menendez J, Sankey OF. Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys Materials Research Society Symposium - Proceedings. 469: 443-448. DOI: 10.1557/Proc-469-443  0.769
1997 Meléndez-Lira M, Lorentzen JD, Menendez J, Windl W, Cave NG, Liu R, Christiansen JW, Theodore ND, Candelaria JJ. Microscopic carbon distribution in Si1-yCy alloys: A Raman scattering study Physical Review B. 56: 3648-3650. DOI: 10.1103/Physrevb.56.3648  0.335
1997 Lorentzen JD, Loechelt GH, Meléndez-Lira M, Menéndez J, Sego S, Culbertson RJ, Windl W, Sankey OF, Bair AE, Alford TL. Photoluminescence in Si1−x−yGexCy alloys Applied Physics Letters. 70: 2353-2355. DOI: 10.1063/1.118871  0.55
1996 Meléndez-Lira M, Menéndez J, Windl W, Sankey OF, Spencer GS, Sego S, Culbertson RB, Bair AE, Alford TL. Carbon dependence of Raman mode frequencies in Si1-x-yGexCy alloys. Physical Review. B, Condensed Matter. 54: 12866-12872. PMID 9985144 DOI: 10.1103/Physrevb.54.12866  0.517
1996 Windl W, Pavone P, Strauch D. Second-order Raman spectrum of AlSb from ab initio phonon calculations and evidence for overbending in the LO phonon branch. Physical Review B. 54: 8580-8585. PMID 9984534 DOI: 10.1103/Physrevb.54.8580  0.692
1996 Karch K, Dietrich T, Windl W, Pavone P, Mayer AP, Strauch D. Contribution of quantum and thermal fluctuations to the elastic moduli and dielectric constants of covalent semiconductors. Physical Review. B, Condensed Matter. 53: 7259-7266. PMID 9982173 DOI: 10.1103/Physrevb.53.7259  0.649
1996 Demkov AA, Windl W, Sankey OF. Expanded-volume phases of silicon: Zeolites without oxygen Physical Review B - Condensed Matter and Materials Physics. 53: 11288-11291. DOI: 10.1103/Physrevb.53.11288  0.684
1996 Strauch D, Windl W, Sterner H, Pavone P, Karch K. Full ab initio calculation of second-order infrared and Raman spectra of elemental semiconductors Physica B: Condensed Matter. 219: 442-444. DOI: 10.1016/0921-4526(95)00772-5  0.704
1996 Pavone P, Bauer R, Karch K, Schütt O, Vent S, Windl W, Strauch D, Baroni S, De Gironcoli S. Ab initio phonon calculations in solids Physica B: Condensed Matter. 219: 439-441. DOI: 10.1016/0921-4526(95)00771-7  0.708
1996 Strauch D, Pavone P, Nerb N, Karch K, Windl W, Dalba G, Fornasini P. Atomic thermal vibrations in semiconductors: Ab initio calculations and EXAFS measurements Physica B: Condensed Matter. 219: 436-438. DOI: 10.1016/0921-4526(95)00770-9  0.701
1995 Bauer R, Schütt O, Pavone P, Windl W, Strauch D. Static and dynamical properties of solid chlorine. Physical Review B. 51: 210-213. PMID 9977079 DOI: 10.1103/Physrevb.51.210  0.704
1995 Karch K, Pavone P, Windl W, Strauch D, Bechstedt F. Ab initio calculation of structural, lattice dynamical, and thermal properties of cubic silicon carbide International Journal of Quantum Chemistry. 56: 801-817. DOI: 10.1002/Qua.560560617  0.727
1995 Windl W, Karch K, Pavone P, Schütt O, Strauch D. Full Ab Initio Calculation of Second-Order Raman Spectra of Semiconductors International Journal of Quantum Chemistry. 56: 787-790. DOI: 10.1002/Qua.560560615  0.702
1994 Windl W, Karch K, Pavone P, Schütt O, Strauch D, Weber WH, Hass KC, Rimai L. Second-order Raman spectra of SiC: Experimental and theoretical results from ab initio phonon calculations. Physical Review. B, Condensed Matter. 49: 8764-8767. PMID 10009656 DOI: 10.1103/Physrevb.49.8764  0.693
1994 Schütt O, Pavone P, Windl W, Karch K, Strauch D. Ab initio lattice dynamics and charge fluctuations in alkaline-earth oxides. Physical Review. B, Condensed Matter. 50: 3746-3753. PMID 9976652 DOI: 10.1103/Physrevb.50.3746  0.704
1994 Karch K, Pavone P, Windl W, Schütt O, Strauch D. Ab initio calculation of structural and lattice-dynamical properties of silicon carbide. Physical Review. B, Condensed Matter. 50: 17054-17063. PMID 9976102 DOI: 10.1103/Physrevb.50.17054  0.708
1993 Windl W, Pavone P, Karch K, Schütt O, Strauch D, Giannozzi P, Baroni S. Second-order Raman spectra of diamond from ab initio phonon calculations. Physical Review. B, Condensed Matter. 48: 3164-3170. PMID 10008739 DOI: 10.1103/Physrevb.48.3164  0.703
1993 Pavone P, Karch K, Schütt O, Strauch D, Windl W, Giannozzi P, Baroni S. Ab initio lattice dynamics of diamond. Physical Review. B, Condensed Matter. 48: 3156-3163. PMID 10008738 DOI: 10.1103/Physrevb.48.3156  0.708
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