| Year |
Citation |
Score |
| 2018 |
Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H, Rajan S. Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes Applied Physics Express. 11: 31101. DOI: 10.7567/Apex.11.031101 |
0.637 |
|
| 2018 |
Feng Z, Rafique S, Cai Y, Han L, Huang M, Zhao H. ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration Ecs Journal of Solid State Science and Technology. 7: Q3114-Q3119. DOI: 10.1149/2.0221807Jss |
0.451 |
|
| 2018 |
Zheng X, Lee J, Rafique S, Karim MR, Han L, Zhao H, Zorman CA, Feng PX.
$\beta$
-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection Ieee Electron Device Letters. 39: 1230-1233. DOI: 10.1109/Led.2018.2850776 |
0.459 |
|
| 2018 |
Neal AT, Mou S, Rafique S, Zhao H, Ahmadi E, Speck JS, Stevens KT, Blevins JD, Thomson DB, Moser N, Chabak KD, Jessen GH. Donors and deep acceptors in β-Ga2O3 Applied Physics Letters. 113: 062101. DOI: 10.1063/1.5034474 |
0.591 |
|
| 2018 |
Yoo J, Rafique S, Lange A, Zhao H, Elhadj S. Lifetime laser damage performance of β-Ga2O3 for high power applications Apl Materials. 6: 36105. DOI: 10.1063/1.5021603 |
0.552 |
|
| 2018 |
Rafique S, Karim MR, Johnson JM, Hwang J, Zhao H. LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates Applied Physics Letters. 112: 052104. DOI: 10.1063/1.5017616 |
0.671 |
|
| 2018 |
Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PXL. Free-Standing β-Ga 2 O 3 Thin Diaphragms Journal of Electronic Materials. 47: 973-981. DOI: 10.1007/S11664-017-5978-7 |
0.638 |
|
| 2017 |
Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PX. Ultra-Wide-Bandgap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion. Acs Applied Materials & Interfaces. PMID 29115818 DOI: 10.1021/Acsami.7B13930 |
0.654 |
|
| 2017 |
Rafique S, Han L, Mou S, Zhao H. Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire Optical Materials Express. 7: 3561. DOI: 10.1364/Ome.7.003561 |
0.627 |
|
| 2017 |
Rafique S, Han L, Zhao H. (Invited) Ultrawide Bandgap β-Ga2O3Thin Films: Growths, Properties and Devices Ecs Transactions. 80: 203-216. DOI: 10.1149/08007.0203ECST |
0.417 |
|
| 2017 |
Rafique S, Han L, Zhao H. Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors(Conference Presentation) Proceedings of Spie. 10105. DOI: 10.1117/12.2252373 |
0.664 |
|
| 2017 |
Rafique S, Han L, Lee J, Zheng XQ, Zorman CA, Feng PXL, Zhao H. Synthesis and characterization of Ga2O3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor deposition Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 11208. DOI: 10.1116/1.4974158 |
0.649 |
|
| 2017 |
Rafique S, Han L, Neal AT, Mou S, Boeckl J, Zhao H. Towards High-Mobility Heteroepitaxial β-Ga2
O3
on Sapphire − Dependence on The Substrate Off-Axis Angle Physica Status Solidi (a). 215: 1700467. DOI: 10.1002/Pssa.201700467 |
0.582 |
|
| 2017 |
Rafique S, Han L, Zhao H. Thermal annealing effect on β-Ga2
O3
thin film solar blind photodetector heteroepitaxially grown on sapphire substrate Physica Status Solidi (a). 214: 1700063. DOI: 10.1002/Pssa.201700063 |
0.61 |
|
| 2016 |
Rafique S, Han L, Neal AT, Mou S, Tadjer MJ, French RH, Zhao H. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition Applied Physics Letters. 109. DOI: 10.1063/1.4963820 |
0.691 |
|
| 2016 |
Rafique S, Han L, Tadjer MJ, Freitas JA, Mahadik NA, Zhao H. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition Applied Physics Letters. 108. DOI: 10.1063/1.4948944 |
0.663 |
|
| 2016 |
Rafique S, Han L, Zhao H. Growth and Electrical Properties of Free-Standing Zinc Oxide Nanomembranes Crystal Growth and Design. 16: 1654-1661. DOI: 10.1021/Acs.Cgd.5B01738 |
0.581 |
|
| 2016 |
Rafique S, Han L, Zorman CA, Zhao H. Synthesis of Wide Bandgap β-Ga2O3 Rods on 3C-SiC-on-Si Crystal Growth and Design. 16: 511-517. DOI: 10.1021/Acs.Cgd.5B01562 |
0.675 |
|
| 2015 |
Rafique S, Han L, Zhao H. Density Controlled Growth of ZnO Nanowall−Nanowire 3D Networks Journal of Physical Chemistry C. 119: 12023-12029. DOI: 10.1021/Acs.Jpcc.5B02735 |
0.582 |
|
| 2015 |
Rafique S, Han L, Zhao H. Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate Journal of Crystal Growth. 415: 78-83. DOI: 10.1016/J.Jcrysgro.2014.12.039 |
0.581 |
|
| 2015 |
Rafique S, Han L, Zhao H. Synthesis of wide bandgap Ga2O3(Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition Physica Status Solidi (a). 213: 1002-1009. DOI: 10.1002/Pssa.201532711 |
0.66 |
|
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