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Brian Romanczyk - Publications

Affiliations: 
2013- Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
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24 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Sayed I, Liu W, Romanczyk B, Georgieva J, Chan S, Keller S, Mishra UK. Improved operation stability of in-situ AlSiO dielectric grown on (000-1) N-polar GaN by MOCVD Applied Physics Express. 13: 61010. DOI: 10.35848/1882-0786/Ab93A3  0.79
2020 Romanczyk B, Guidry M, Zheng X, Li H, Ahmadi E, Keller S, Mishra UK. Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Ieee Transactions On Electron Devices. 67: 1542-1546. DOI: 10.1109/Ted.2020.2973081  0.814
2020 Romanczyk B, Li W, Guidry M, Hatui N, Krishna A, Wurm C, Keller S, Mishra UK. N-polar GaN-on-Sapphire Deep Recess HEMTs with High W-Band Power Density Ieee Electron Device Letters. 1-1. DOI: 10.1109/Led.2020.3022401  0.826
2020 Liu W, Sayed I, Romanczyk B, Hatui N, Guidry M, Mitchell WJ, Keller S, Mishra UK. Ru/N-polar GaN Schottky diode with less than 2 μA/cm2 reverse current Ieee Electron Device Letters. 1-1. DOI: 10.1109/Led.2020.3014524  0.507
2020 Shrestha P, Guidry M, Romanczyk B, Hatui N, Wurm C, Krishna A, Pasayat SS, Karnaty RR, Keller S, Buckwalter JF, Mishra UK. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz Ieee Electron Device Letters. 41: 681-684. DOI: 10.1109/Led.2020.2980841  0.819
2020 Bisi D, Meneghesso G, Mishra UK, Zanoni E, Wienecke S, Romanczyk B, Li H, Ahmadi E, Keller S, Guidry M, Santi CD, Meneghini M. Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures Ieee Electron Device Letters. 41: 345-348. DOI: 10.1109/Led.2020.2968875  0.757
2020 Hatui N, Krishna A, Li H, Gupta C, Romanczyk B, Acker-James D, Ahmadi E, Keller S, Mishra UK. Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002. DOI: 10.1088/1361-6641/Ab9727  0.804
2020 Li W, Pasayat SS, Guidry M, Romanczyk B, Zheng X, Gupta C, Hatui N, Keller S, Mishra UK. First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel Semiconductor Science and Technology. 35: 75007. DOI: 10.1088/1361-6641/Ab860A  0.786
2019 Gupta C, Tsukada Y, Romanczyk B, Pasayat SS, James D, Ahmadi E, Keller S, Mishra UK. First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain Japanese Journal of Applied Physics. 58: 30908. DOI: 10.7567/1347-4065/Aaffaa  0.765
2019 Pasayat SS, Ahmadi E, Romanczyk B, Koksaldi O, Agarwal A, Guidry M, Gupta C, Wurm C, Keller S, Mishra UK. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009. DOI: 10.1088/1361-6641/Ab0761  0.803
2018 Romanczyk B, Wienecke S, Guidry M, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs Ieee Transactions On Electron Devices. 65: 45-50. DOI: 10.1109/Ted.2017.2770087  0.83
2018 Koksaldi OS, Haller J, Li H, Romanczyk B, Guidry M, Wienecke S, Keller S, Mishra UK. N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance Ieee Electron Device Letters. 39: 1014-1017. DOI: 10.1109/Led.2018.2834939  0.803
2018 Zheng X, Li H, Guidry M, Romanczyk B, Ahmadi E, Hestroffer K, Wienecke S, Keller S, Mishra UK. Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ Ieee Electron Device Letters. 39: 409-412. DOI: 10.1109/Led.2018.2799160  0.79
2018 Lund C, Agarwal A, Romanczyk B, Mates T, Nakamura S, DenBaars SP, Mishra UK, Keller S. Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD Semiconductor Science and Technology. 33: 095014. DOI: 10.1088/1361-6641/Aad5Cf  0.799
2018 Li H, Wienecke S, Romanczyk B, Ahmadi E, Guidry M, Zheng X, Keller S, Mishra UK. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels Applied Physics Letters. 112: 73501. DOI: 10.1063/1.5010944  0.785
2017 Wienecke S, Romanczyk B, Guidry M, Li H, Ahmadi E, Hestroffer K, Zheng X, Keller S, Mishra UK. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz Ieee Electron Device Letters. 38: 359-362. DOI: 10.1109/Led.2017.2653192  0.83
2017 Lund C, Romanczyk B, Catalano M, Wang Q, Li W, DiGiovanni D, Kim MJ, Fay P, Nakamura S, DenBaars SP, Mishra UK, Keller S. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices Journal of Applied Physics. 121: 185707. DOI: 10.1063/1.4983300  0.759
2016 Wienecke S, Romanczyk B, Guidry M, Li H, Zheng X, Ahmadi E, Hestroffer K, Megalini L, Keller S, Mishra UK. N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz Ieee Electron Device Letters. 37: 713-716. DOI: 10.1109/Led.2016.2556717  0.839
2016 Zheng X, Guidry M, Li H, Ahmadi E, Hestroffer K, Romanczyk B, Wienecke S, Keller S, Mishra UK. N-Polar GaN MIS-HEMTs on Sapphire with High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage Ieee Electron Device Letters. 37: 77-80. DOI: 10.1109/Led.2015.2502253  0.831
2016 Chan SH, Keller S, Tahhan M, Li H, Romanczyk B, Denbaars SP, Mishra UK. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/6/065008  0.812
2016 Romanczyk B, Guidry M, Wienecke S, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz Electronics Letters. 52: 1813-1814. DOI: 10.1049/El.2016.2664  0.829
2015 Thomas P, Filmer M, Gaur A, Pawlik DJ, Romanczyk B, Marini E, Rommel SL, Majumdar K, Loh WY, Wong MH, Hobbs C, Bhatnagar K, Contreras-Guerrero R, Droopad R. Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates Ieee Transactions On Electron Devices. 62: 2450-2456. DOI: 10.1109/Ted.2015.2445731  0.344
2014 Majumdar K, Thomas P, Loh WY, Hung PY, Matthews K, Pawlik D, Romanczyk B, Filmer M, Gaur A, Droopad R, Rommel SL, Hobbs C, Kirsch PD. Mapping defect density in MBE grown In0.53Ga0.47As epitaxial layers on Si substrate using esaki diode valley characteristics Ieee Transactions On Electron Devices. 61: 2049-2055. DOI: 10.1109/Ted.2014.2318597  0.435
2013 Romanczyk B, Thomas P, Pawlik D, Rommel SL, Loh WY, Wong MH, Majumdar K, Wang WE, Kirsch PD. Benchmarking current density in staggered gap In0.53Ga 0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes Applied Physics Letters. 102. DOI: 10.1063/1.4808362  0.375
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