| Year |
Citation |
Score |
| 2022 |
Cheema SS, Shanker N, Wang LC, Hsu CH, Hsu SL, Liao YH, San Jose M, Gomez J, Chakraborty W, Li W, Bae JH, Volkman SK, Kwon D, Rho Y, Pinelli G, ... ... Fay P, et al. Ultrathin ferroic HfO-ZrO superlattice gate stack for advanced transistors. Nature. 604: 65-71. PMID 35388197 DOI: 10.1038/s41586-022-04425-6 |
0.347 |
|
| 2020 |
Deng Y, Ren J, Shi Y, Wang YC, Cheng LJ, Fay P, Liu L. Advanced photo-induced substrate-integrated waveguides using pillar-array structures for tunable and reconfigurable THz circuits. Optics Express. 28: 7259-7273. PMID 32225958 DOI: 10.1364/Oe.381775 |
0.382 |
|
| 2020 |
Moon J, Wong J, Grabar B, Antcliffe M, Chen P, Arkun E, Khalaf I, Corrion A, Chappell J, Venkatesan N, Fay P. 360 GHz f MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications Ieee Electron Device Letters. 41: 1173-1176. DOI: 10.1109/Led.2020.3005337 |
0.409 |
|
| 2020 |
Wu C, Ye H, Shaju N, Smith J, Grisafe B, Datta S, Fay P. Hf 0.5 Zr 0.5 O 2 -Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range Ieee Electron Device Letters. 41: 337-340. DOI: 10.1109/Led.2020.2965330 |
0.431 |
|
| 2020 |
Chaney A, Turski H, Nomoto K, Hu Z, Encomendero J, Rouvimov S, Orlova T, Fay P, Seabaugh A, Xing HG, Jena D. Gallium nitride tunneling field-effect transistors exploiting polarization fields Applied Physics Letters. 116: 073502. DOI: 10.1063/1.5132329 |
0.437 |
|
| 2020 |
Moon JS, Grabar R, Wong J, Antcliffe M, Chen P, Arkun E, Khalaf I, Corrion A, Chappell J, Venkatesan N, Fay P. High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz Electronics Letters. 56: 678-680. DOI: 10.1049/El.2020.0281 |
0.358 |
|
| 2020 |
Cao L, Ye H, Wang J, Fay P. Avalanche Multiplication Noise in GaN p‐n Junctions Grown on Native GaN Substrates Physica Status Solidi B-Basic Solid State Physics. 257: 1900373. DOI: 10.1002/Pssb.201900373 |
0.311 |
|
| 2019 |
Fay P. Guest Editorial Special Section on the 2019 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH) Ieee Transactions On Semiconductor Manufacturing. 32: 465-465. DOI: 10.1109/Tsm.2019.2945140 |
0.335 |
|
| 2019 |
Ameen TA, Ilatikhameneh H, Fay P, Seabaugh A, Rahman R, Klimeck G. Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs Ieee Transactions On Electron Devices. 66: 736-742. DOI: 10.1109/Ted.2018.2877753 |
0.396 |
|
| 2019 |
Ebadi-Shahrivar A, Fay P, Love DJ, Hochwald BM. Determining Electromagnetic Exposure Compliance of Multi-Antenna Devices in Linear Time Ieee Transactions On Antennas and Propagation. 67: 7585-7596. DOI: 10.1109/Tap.2019.2925135 |
0.324 |
|
| 2019 |
Silva-Oelker G, Jerez-Hanckes C, Fay P. High-temperature tungsten-hafnia optimized selective thermal emitters for thermophotovoltaic applications Journal of Quantitative Spectroscopy & Radiative Transfer. 231: 61-68. DOI: 10.1016/J.Jqsrt.2019.04.008 |
0.321 |
|
| 2019 |
Wang J, McCarthy R, Youtsey C, Reddy R, Xie J, Beam E, Guido L, Cao L, Fay P. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019) Physica Status Solidi (a). 216: 1970019. DOI: 10.1002/Pssa.201970019 |
0.365 |
|
| 2019 |
Wang J, McCarthy R, Youtsey C, Reddy R, Xie J, Beam E, Guido L, Cao L, Fay P. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates Physica Status Solidi (a). 216: 1800652. DOI: 10.1002/Pssa.201800652 |
0.367 |
|
| 2018 |
Li W, Brubaker MD, Spann BT, Bertness KA, Fay P. GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope. Ieee Electron Device Letters : a Publication of the Ieee Electron Devices Society. 39: 184-187. PMID 29720783 DOI: 10.1109/Led.2017.2785785 |
0.471 |
|
| 2018 |
Hanser D, Fay P. Guest Editorial Special Section on the 2018 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH) Ieee Transactions On Semiconductor Manufacturing. 31: 411-412. DOI: 10.1109/Tsm.2018.2873469 |
0.337 |
|
| 2018 |
Rahman SM, Jiang Z, Shams MIB, Fay P, Liu L. A G-Band Monolithically Integrated Quasi-Optical Zero-Bias Detector Based on Heterostructure Backward Diodes Using Submicrometer Airbridges Ieee Transactions On Microwave Theory and Techniques. 66: 2010-2017. DOI: 10.1109/Tmtt.2017.2779133 |
0.417 |
|
| 2018 |
Cao L, Lo C, Marchand H, Johnson W, Fay P. Low-Loss Coplanar Waveguides on GaN-on-Si Substrates Ieee Microwave and Wireless Components Letters. 28: 861-863. DOI: 10.1109/Lmwc.2018.2867084 |
0.39 |
|
| 2018 |
Ren J, Jiang Z, Fay P, Hesler JL, Tong CE, Liu L. High-Performance WR-4.3 Optically Controlled Variable Attenuator With 60-dB Range Ieee Microwave and Wireless Components Letters. 28: 512-514. DOI: 10.1109/Lmwc.2018.2823589 |
0.403 |
|
| 2018 |
Wang J, McCarthy R, Youtsey C, Reddy R, Xie J, Beam E, Guido L, Cao L, Fay P. High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates Ieee Electron Device Letters. 39: 1716-1719. DOI: 10.1109/Led.2018.2868560 |
0.437 |
|
| 2018 |
Lu H, Paletti P, Li W, Fay P, Ytterdal T, Seabaugh A. Tunnel FET Analog Benchmarking and Circuit Design Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 19-25. DOI: 10.1109/Jxcdc.2018.2817541 |
0.412 |
|
| 2018 |
Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R, De Santi C, De Souza MM, Decoutere S, Di Cioccio L, Eckardt B, ... ... Fay P, et al. The 2018 GaN power electronics roadmap Journal of Physics D: Applied Physics. 51: 163001. DOI: 10.1088/1361-6463/Aaaf9D |
0.372 |
|
| 2018 |
Wang J, Cao L, Xie J, Beam E, McCarthy R, Youtsey C, Fay P. High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Applied Physics Letters. 113: 23502. DOI: 10.1063/1.5035267 |
0.419 |
|
| 2018 |
Cao L, Wang J, Harden G, Ye H, Stillwell R, Hoffman AJ, Fay P. Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates Applied Physics Letters. 112: 262103. DOI: 10.1063/1.5031785 |
0.352 |
|
| 2018 |
Encomendero J, Yan R, Verma A, Islam SM, Protasenko V, Rouvimov S, Fay P, Jena D, Xing HG. Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2 Applied Physics Letters. 112: 103101. DOI: 10.1063/1.5016414 |
0.419 |
|
| 2017 |
Crippa A, Maurand R, Kotekar-Patil D, Corna A, Bohuslavskyi H, Orlov AO, Fay P, Laviéville R, Barraud S, Vinet M, Sanquer M, Franceschi SD, Jehl X. Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry Nano Letters. 17: 1001-1006. PMID 28080065 DOI: 10.1021/Acs.Nanolett.6B04354 |
0.34 |
|
| 2017 |
Shams MIB, Jiang Z, Rahman SM, Cheng L, Hesler JL, Fay P, Liu L. A 740-GHz Dynamic Two-Dimensional Beam-Steering and Forming Antenna Based on Photo-Induced Reconfigurable Fresnel Zone Plates Ieee Transactions On Terahertz Science and Technology. 7: 310-319. DOI: 10.1109/Tthz.2017.2681431 |
0.339 |
|
| 2017 |
Jiang Z, Shams MIB, Cheng L, Fay P, Hesler JL, Tong CE, Liu L. Investigation and Demonstration of a WR-4.3 Optically Controlled Waveguide Attenuator Ieee Transactions On Terahertz Science and Technology. 7: 1-7. DOI: 10.1109/Tthz.2016.2635443 |
0.361 |
|
| 2017 |
Della-Morrow C, Hanser D, Fay P. Special Section on the 2017 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH) Ieee Transactions On Semiconductor Manufacturing. 30: 448-449. DOI: 10.1109/Tsm.2017.2757318 |
0.35 |
|
| 2017 |
Encomendero J, Faria FA, Islam S, Protasenko V, Rouvimov S, Sensale-Rodriguez B, Fay P, Jena D, Xing HG. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes Physical Review X. 7. DOI: 10.1103/Physrevx.7.041017 |
0.359 |
|
| 2017 |
Lund C, Romanczyk B, Catalano M, Wang Q, Li W, DiGiovanni D, Kim MJ, Fay P, Nakamura S, DenBaars SP, Mishra UK, Keller S. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices Journal of Applied Physics. 121: 185707. DOI: 10.1063/1.4983300 |
0.376 |
|
| 2017 |
Wang J, Youtsey C, McCarthy R, Reddy R, Allen N, Guido L, Xie J, Beam E, Fay P. Thin-film GaN Schottky diodes formed by epitaxial lift-off Applied Physics Letters. 110: 173503. DOI: 10.1063/1.4982250 |
0.394 |
|
| 2017 |
Fernández-Berni J, Niemier M, Hu XS, Lu H, Li W, Fay P, Carmona-Galán R, Rodríguez-Vázquez Á. TFET-based well capacity adjustment in active pixel sensor for enhanced high dynamic range Electronics Letters. 53: 622-624. DOI: 10.1049/El.2016.4548 |
0.385 |
|
| 2017 |
Youtsey C, McCarthy R, Reddy R, Forghani K, Xie A, Beam E, Wang J, Fay P, Ciarkowski T, Carlson E, Guido L. Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching Physica Status Solidi B-Basic Solid State Physics. 254: 1600774. DOI: 10.1002/Pssb.201600774 |
0.342 |
|
| 2016 |
Liu L, Shams MIB, Jiang Z, Rahman S, Hesler JL, Cheng L-, Fay P. Tunable and reconfigurable THz devices for advanced imaging and adaptive wireless communication Proceedings of Spie. 9934: 993407. DOI: 10.1117/12.2237709 |
0.368 |
|
| 2016 |
Rahman SM, Jiang Z, Fay P, Liu L. Integration and fabrication of high-performance Sb-based heterostructure backward diodes with submicron-scale airbridges for terahertz detection Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4953551 |
0.444 |
|
| 2016 |
Via GD, Della-Morrow C, Fay P. Guest Editorial Special Section on the 2016 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) Ieee Transactions On Semiconductor Manufacturing. 29: 328-329. DOI: 10.1109/Tsm.2016.2614728 |
0.361 |
|
| 2016 |
Lu H, Li W, Lu Y, Fay P, Ytterdal T, Seabaugh A. Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 20-27. DOI: 10.1109/Jxcdc.2016.2582204 |
0.376 |
|
| 2016 |
Li W, Fay P, Yu T, Hoyt J. Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunnel field-effect transistors Electronics Letters. 52: 842-844. DOI: 10.1049/El.2016.0328 |
0.42 |
|
| 2016 |
Fay P, Bernstein GH, Lu T, Kulick JM. Ultra-wide Bandwidth Inter-Chip Interconnects for Heterogeneous Millimeter-Wave and THz Circuits Journal of Infrared, Millimeter, and Terahertz Waves. 1-7. DOI: 10.1007/S10762-016-0278-5 |
0.391 |
|
| 2016 |
Li W, Cao L, Lund C, Keller S, Fay P. Performance projection of III-nitride heterojunction nanowire tunneling field-effect transistors Physica Status Solidi (a) Applications and Materials Science. 213: 905-908. DOI: 10.1002/Pssa.201532564 |
0.476 |
|
| 2015 |
Khan MA, Zheng Q, Kopp D, Buckhanan W, Kulick JM, Fay P, Kriman AM, Bernstein GH. Thermal Cycling Study of Quilt Packaging Journal of Electronic Packaging. 137: 21008. DOI: 10.1115/1.4029245 |
0.312 |
|
| 2015 |
Lorenz CHP, Hemour S, Li W, Xie Y, Gauthier J, Fay P, Wu K. Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting With Heterojunction Backward Tunnel Diodes Ieee Transactions On Microwave Theory and Techniques. 63: 4544-4555. DOI: 10.1109/Tmtt.2015.2495356 |
0.331 |
|
| 2015 |
Jiang Z, Lu Y, Tan Y, He Y, Povolotskyi M, Kubis T, Seabaugh AC, Fay P, Klimeck G. Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction Ieee Transactions On Electron Devices. 62: 2445-2449. DOI: 10.1109/Ted.2015.2443564 |
0.321 |
|
| 2015 |
Orlov AO, Fay P, Snider GL, Jehl X, Barraud S, Sanquer M. Dual-port reflectometry technique: Charge identification in nanoscaled single-electron transistors Ieee Nanotechnology Magazine. 9: 24-32. DOI: 10.1109/Mnano.2015.2409411 |
0.349 |
|
| 2015 |
Li W, Sharmin S, Ilatikhameneh H, Rahman R, Lu Y, Wang J, Yan X, Seabaugh A, Klimeck G, Jena D, Fay P. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34. DOI: 10.1109/Jxcdc.2015.2426433 |
0.423 |
|
| 2015 |
Qi M, Nomoto K, Zhu M, Hu Z, Zhao Y, Protasenko V, Song B, Yan X, Li G, Verma J, Bader S, Fay P, Xing HG, Jena D. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4936891 |
0.386 |
|
| 2015 |
Yan X, Li W, Islam SM, Pourang K, Xing H, Fay P, Jena D. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions Applied Physics Letters. 107. DOI: 10.1063/1.4934269 |
0.372 |
|
| 2015 |
Rahman SM, Jiang Z, Liu L, Xing H(, Fay P. Lens-coupled folded-dipole antennas for terahertz detection and imaging Iet Microwaves, Antennas & Propagation. 9: 1213-1220. DOI: 10.1049/Iet-Map.2014.0415 |
0.354 |
|
| 2015 |
Fay P, Aktas O, Bour D, Kizilyalli IC. Experimental observation of RF avalanche gain in GaN-based PN junction diodes Electronics Letters. 51: 1009-1010. DOI: 10.1049/El.2015.1551 |
0.417 |
|
| 2015 |
Ohlsson L, Fay P, Wernersson L. Picosecond dynamics in a millimetre-wave RTD–MOSFET wavelet generator Electronics Letters. 51: 1671-1672. DOI: 10.1049/El.2015.1329 |
0.327 |
|
| 2014 |
Fay P, Xie Y, Zhao Y, Jiang Z, Rahman S, Xing H, Sensale-Rodriguez B, Liu L. Emerging electronic devices for THz sensing and imaging Proceedings of Spie - the International Society For Optical Engineering. 9199. DOI: 10.1117/12.2062263 |
0.421 |
|
| 2014 |
Shams MIB, Jiang Z, Rahman S, Qayyum J, Hesler JL, Cheng LJ, Xing HG, Fay P, Liu L. Approaching real-time terahertz imaging using photo-induced reconfigurable aperture arrays Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2053326 |
0.303 |
|
| 2014 |
Jiang Z, Rahman SM, Ruggiero ST, Fay P, Liu L. Multiband terahertz quasi-optical balanced hot-electron mixers based on dual-polarization sinuous antennas Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2053198 |
0.411 |
|
| 2014 |
Malis O, Edmunds C, Li D, Shao J, Gardner G, Li W, Fay P, Manfra MJ. Quantum band engineering of nitride semiconductors for infrared lasers Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2036286 |
0.355 |
|
| 2014 |
Yue Y, Yan X, Li W, Xing HG, Jena D, Fay P. Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896592 |
0.306 |
|
| 2014 |
Karbasian G, Fay PJ, Grace Xing H, Orlov AO, Snider GL. Chemical mechanical planarization of gold Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4863275 |
0.305 |
|
| 2014 |
Kannegulla A, Jiang Z, Rahman SM, Shams MIB, Fay P, Xing HG, Cheng LJ, Liu L. Coded-aperture imaging using photo-induced reconfigurable aperture arrays for mapping terahertz beams Ieee Transactions On Terahertz Science and Technology. 4: 321-327. DOI: 10.1109/Tthz.2014.2307163 |
0.319 |
|
| 2014 |
Song B, Sensale-Rodriguez B, Wang R, Guo J, Hu Z, Yue Y, Faria F, Schuette M, Ketterson A, Beam E, Saunier P, Gao X, Guo S, Fay P, Jena D, et al. Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates Ieee Transactions On Electron Devices. 61: 747-754. DOI: 10.1109/Ted.2014.2299810 |
0.437 |
|
| 2014 |
Hochwald BM, Love DJ, Yan S, Fay P, Jin JM. Incorporating specific absorption rate constraints into wireless signal design Ieee Communications Magazine. 52: 126-133. DOI: 10.1109/Mcom.2014.6894463 |
0.316 |
|
| 2014 |
Fay P, Kopp D, Lu T, Neal D, Bernstein GH, Kulick JM. Ultrawide bandwidth chip-to-chip interconnects for III-V MMICs Ieee Microwave and Wireless Components Letters. 24: 29-31. DOI: 10.1109/Lmwc.2013.2288181 |
0.415 |
|
| 2014 |
Zhao P, Verma A, Verma J, Xing HG, Fay P, Jena D. GaN heterostructure barrier diodes exploiting polarization-induced δ-doping Ieee Electron Device Letters. 35: 615-617. DOI: 10.1109/Led.2014.2316140 |
0.389 |
|
| 2014 |
Zhao Y, Chen W, Li W, Zhu M, Yue Y, Song B, Encomendero J, Sensale-Rodriguez B, Xing H, Fay P. Direct electrical observation of plasma wave - Related effects in GaN-based two-dimensional electron gases Applied Physics Letters. 105. DOI: 10.1063/1.4900964 |
0.415 |
|
| 2014 |
Villis BJ, Orlov AO, Barraud S, Vinet M, Sanquer M, Fay P, Snider G, Jehl X. Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry Applied Physics Letters. 104. DOI: 10.1063/1.4883228 |
0.358 |
|
| 2014 |
Jiang Z, Fay P, Rahman SM, Hesler JL, Liu L. Design and characterisation of a 200 GHz tunable lens-coupled annular-slot antenna with a 50 GHz tuning range Iet Microwaves, Antennas & Propagation. 8: 842-848. DOI: 10.1049/Iet-Map.2014.0032 |
0.38 |
|
| 2013 |
Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, Grace H. Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400GHz Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn14 |
0.45 |
|
| 2013 |
Wang R, Li G, Karbasian G, Guo J, Faria F, Hu Z, Yue Y, Verma J, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz Applied Physics Express. 6. DOI: 10.7567/Apex.6.016503 |
0.448 |
|
| 2013 |
Zhao Y, Fay P, Wibowo A, Youtsey C. Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl4/Ar Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31. DOI: 10.1116/1.4822015 |
0.327 |
|
| 2013 |
Sensale-Rodríguez B, Liu L, Fay P, Jena D, Xing HG. Power amplification at THz via plasma wave excitation in RTD-gated HEMTs Ieee Transactions On Terahertz Science and Technology. 3: 200-206. DOI: 10.1109/Tthz.2012.2235909 |
0.388 |
|
| 2013 |
Tiwari BN, Fay PJ, Bernstein GH, Orlov AO, Porod W. Effect of Read-Out Interconnects on the Polarization Characteristics of Nanoantennas for the Long-Wave Infrared Regime Ieee Transactions On Nanotechnology. 12: 270-275. DOI: 10.1109/Tnano.2013.2245338 |
0.338 |
|
| 2013 |
Schuette ML, Ketterson A, Song B, Beam E, Chou T, Pilla M, Tserng H, Gao X, Guo S, Fay PJ, Xing HG, Saunier P. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz Ieee Electron Device Letters. 34: 741-743. DOI: 10.1109/Led.2013.2257657 |
0.413 |
|
| 2013 |
Wang R, Li G, Karbasian G, Guo J, Song B, Yue Y, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. Quaternary barrier InAlGaN HEMTs with fTfmax of 230/300 GHz Ieee Electron Device Letters. 34: 378-380. DOI: 10.1109/Led.2013.2238503 |
0.491 |
|
| 2013 |
Jiang Z, Hesler JL, Rahman SM, Liu L, Fay P. Tunable 200 GHz lens-coupled annular-slot antennas using Schottky varactor diodes for all-electronic reconfigurable terahertz circuits Electronics Letters. 49: 1428-1430. DOI: 10.1049/El.2013.3217 |
0.415 |
|
| 2013 |
Sensale-Rodriguez B, Guo J, Wang R, Verma J, Li G, Fang T, Beam E, Ketterson A, Schuette M, Saunier P, Gao X, Guo S, Snider G, Fay P, Jena D, et al. Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs Solid-State Electronics. 80: 67-71. DOI: 10.1016/J.Sse.2012.10.004 |
0.332 |
|
| 2013 |
Shams MIB, Xie Y, Lu Y, Fay P. An accurate interband tunneling model for InAs/GaSb heterostructure devices Physica Status Solidi (C). 10: 740-743. DOI: 10.1002/Pssc.201200624 |
0.365 |
|
| 2013 |
Lee DS, Laboutin O, Cao Y, Johnson W, Beam E, Ketterson A, Schuette M, Saunier P, Kopp D, Fay P, Palacios T. 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance Physica Status Solidi (C). 10: 827-830. DOI: 10.1002/Pssc.201200541 |
0.476 |
|
| 2012 |
Zhao Y, Fay P, Wibowo A, Liu J, Youtsey C. Via-hole fabrication for III-V triple-junction solar cells Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30. DOI: 10.1116/1.4754306 |
0.339 |
|
| 2012 |
Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, et al. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and f T of 370 GHz Ieee Electron Device Letters. 33: 988-990. DOI: 10.1109/Led.2012.2196751 |
0.476 |
|
| 2012 |
Zhou G, Lu Y, Li R, Zhang Q, Liu Q, Vasen T, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784. DOI: 10.1109/Led.2012.2189546 |
0.454 |
|
| 2012 |
Lu Y, Zhou G, Li R, Liu Q, Zhang Q, Vasen T, Chae SD, Kosel T, Wistey M, Xing H, Seabaugh A, Fay P. Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657. DOI: 10.1109/Led.2012.2186554 |
0.404 |
|
| 2012 |
Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/Led.2011.2179915 |
0.415 |
|
| 2012 |
Chen W, Chen B, Yuan J, Holmes A, Fay P. Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode Applied Physics Letters. 101: 52107. DOI: 10.1063/1.4740275 |
0.339 |
|
| 2012 |
Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/J.Sse.2012.05.044 |
0.388 |
|
| 2012 |
Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/Pssc.201100241 |
0.437 |
|
| 2012 |
Chen W, Yuan J, Holmes A, Fay P. Evaluation of deep levels in In0.53Ga0.47As and GaAs0.5Sb0.5 using low‐frequency noise and RTS noise characterization Physica Status Solidi (C). 9: 251-254. DOI: 10.1002/Pssc.201100239 |
0.345 |
|
| 2011 |
Wang R, Li G, Verma J, Zimmermann T, Hu Z, Laboutin O, Cao Y, Johnson W, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Si-containing recessed ohmic contacts and 210GHz quaternary barrier InAlGaN high-electron-mobility transistors Applied Physics Express. 4. DOI: 10.1143/Apex.4.096502 |
0.451 |
|
| 2011 |
LIU L, HESLER JL, WEIKLE RM, WANG T, FAY P, XING H. A 570-630 GHz FREQUENCY DOMAIN TERAHERTZ SPECTROSCOPY SYSTEM BASED ON A BROADBAND QUASI-OPTICAL ZERO BIAS SCHOTTKY DIODE DETECTOR International Journal of High Speed Electronics and Systems. 20: 629-638. DOI: 10.1142/S0129156411006921 |
0.36 |
|
| 2011 |
SENSALE-RODRIGUEZ B, LIU L, WANG R, ZIMMERMANN T, FAY P, JENA D, XING HG. FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION International Journal of High Speed Electronics and Systems. 20: 597-609. DOI: 10.1142/S0129156411006891 |
0.376 |
|
| 2011 |
ZHANG Z, CAO Y, KELLY M, JENA D, FAY P, RAJAVEL R, DEELMAN P. A PHYSICS-BASED TUNNELING MODEL FOR SB-HETEROSTRUCTURE BACKWARD TUNNEL DIODE MILLIMETER-WAVE DETECTORS International Journal of High Speed Electronics and Systems. 20: 589-596. DOI: 10.1142/S012915641100688X |
0.52 |
|
| 2011 |
Burdette DJ, Alverbro J, Zhang Z, Fay P, Ni Y, Potet P, Sertel K, Trichopoulos G, Topalli K, Volakis J, Lee Mosbacker H. Development of an 80 × 64 pixel, broadband, real-time THz imager Proceedings of Spie - the International Society For Optical Engineering. 8023. DOI: 10.1117/12.884069 |
0.509 |
|
| 2011 |
Fay P, Zhang Z. High Performance Heterostructure Backward Diode Detectors Proceedings of Spie. 8031. DOI: 10.1117/12.883677 |
0.548 |
|
| 2011 |
Zhang Z, Rajavel R, Deelman P, Fay P. Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${\rm pW/Hz}^{1/2}$ Noise Equivalent Power Ieee Microwave and Wireless Components Letters. 21: 267-269. DOI: 10.1109/Lmwc.2011.2123878 |
0.53 |
|
| 2011 |
Lee DS, Gao X, Guo S, Kopp D, Fay P, Palacios T. 300-GHz InAlN/GaN hemts with ingan back barrier Ieee Electron Device Letters. 32: 1525-1527. DOI: 10.1109/Led.2011.2164613 |
0.45 |
|
| 2011 |
Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/Led.2011.2164232 |
0.438 |
|
| 2011 |
Wang R, Li G, Verma J, Sensale-Rodriguez B, Fang T, Guo J, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs Ieee Electron Device Letters. 32: 1215-1217. DOI: 10.1109/Led.2011.2158288 |
0.476 |
|
| 2011 |
Wang R, Li G, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. 210-GHz InAlN/GaN HEMTs with dielectric-free passivation Ieee Electron Device Letters. 32: 892-894. DOI: 10.1109/Led.2011.2147753 |
0.494 |
|
| 2011 |
Lee DS, Chung JW, Wang H, Gao X, Guo S, Fay P, Palacios T. 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment Ieee Electron Device Letters. 32: 755-757. DOI: 10.1109/Led.2011.2132751 |
0.452 |
|
| 2011 |
Wang R, Saunier P, Tang Y, Fang T, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Enhancement-mode InAlN/AlN/GaN HEMTs with 10-12A/mm leakage current and 10-12 on/off current ratio Ieee Electron Device Letters. 32: 309-311. DOI: 10.1109/Led.2010.2095494 |
0.472 |
|
| 2011 |
Villis BJ, Orlov AO, Jehl X, Snider GL, Fay P, Sanquer M. Defect detection in nano-scale transistors based on radio-frequency reflectometry Applied Physics Letters. 99. DOI: 10.1063/1.3647555 |
0.37 |
|
| 2011 |
Jena D, Simon J, Wang A, Cao Y, Goodman K, Verma J, Ganguly S, Li G, Karda K, Protasenko V, Lian C, Kosel T, Fay P, Xing H. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design Physica Status Solidi (a) Applications and Materials Science. 208: 1511-1516. DOI: 10.1002/Pssa.201001189 |
0.328 |
|
| 2010 |
Wang R, Saunier P, Xing X, Lian C, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-ms/mm transconductance Ieee Electron Device Letters. 31: 1383-1385. DOI: 10.1109/Led.2010.2072771 |
0.774 |
|
| 2010 |
Xing X, Fay PJ. Enhancement-mode pseudomorphic In0.22Ga0.78As-Channel MOSFETs with ultrathin inalp native oxide gate dielectric and a cutoff frequency of 60 GHz Ieee Electron Device Letters. 31: 1214-1216. DOI: 10.1109/Led.2010.2068034 |
0.779 |
|
| 2010 |
Li G, Zimmermann T, Cao Y, Lian C, Xing X, Wang R, Fay P, Xing HG, Jena D. Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering Ieee Electron Device Letters. 31: 954-956. DOI: 10.1109/Led.2010.2052912 |
0.761 |
|
| 2010 |
Bean JA, Tiwari B, Szakmány G, Bernstein GH, Fay P, Porod W. Antenna length and polarization response of antenna-coupled MOM diode infrared detectors Infrared Physics & Technology. 53: 182-185. DOI: 10.1016/J.Infrared.2009.11.004 |
0.33 |
|
| 2009 |
Simon J, Zhang Z, Goodman K, Xing H, Kosel T, Fay P, Jena D. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Physical Review Letters. 103: 026801. PMID 19659229 DOI: 10.1103/Physrevlett.103.026801 |
0.511 |
|
| 2009 |
Tiwari B, Bean JA, Szakmány G, Bernstein GH, Fay P, Porod W. Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 2153. DOI: 10.1116/1.3204979 |
0.383 |
|
| 2009 |
Bean JA, Tiwari B, Bernstein GH, Fay P, Porod W. Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 11. DOI: 10.1116/1.3039684 |
0.375 |
|
| 2009 |
Su J, Yang H, Fay P, Porod W, Bernstein GH. A surface micromachined offset-drive method to extend the electrostatic travel range Journal of Micromechanics and Microengineering. 20: 015004. DOI: 10.1088/0960-1317/20/1/015004 |
0.373 |
|
| 2009 |
Tang Y, Orlov AO, Snider GL, Fay PJ. Radio frequency operation of clocked quantum-dot cellular automata latch Applied Physics Letters. 95. DOI: 10.1063/1.3265919 |
0.389 |
|
| 2008 |
Su N, Tang Y, Zhang Z, Kuech TF, Fay P. Observation and control of electrochemical etching effects in the fabrication of InAs/AlSb/GaSb heterostructure devices Journal of Vacuum Science & Technology B. 26: 1025-1029. DOI: 10.1116/1.2924328 |
0.481 |
|
| 2008 |
Zimmermann T, Deen D, Cao Y, Simon J, Fay P, Jena D, Xing HG. AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance Ieee Electron Device Letters. 29: 661-664. DOI: 10.1109/Led.2008.923318 |
0.473 |
|
| 2008 |
Su N, Rajavel R, Deelman P, Schulman JN, Fay P. Sb-heterostructure millimeter-wave detectors with reduced capacitance and noise equivalent power Ieee Electron Device Letters. 29: 536-539. DOI: 10.1109/Led.2008.922986 |
0.39 |
|
| 2008 |
Zhang J, Kosel TH, Hall DC, Fay P. Fabrication and performance of 0.25-μm gate length depletion-mode GaAs-channel MOSFETs with self-aligned InAlP native oxide gate dielectric Ieee Electron Device Letters. 29: 143-145. DOI: 10.1109/Led.2007.914107 |
0.461 |
|
| 2008 |
Jha S, Song X, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy Journal of Crystal Growth. 310: 4772-4775. DOI: 10.1016/J.Jcrysgro.2008.07.048 |
0.316 |
|
| 2007 |
Liu Q, Fay P, Bernstein GH. A Novel Scheme for Wide Bandwidth Chip-to-Chip Communications Journal of Microelectronics and Electronic Packaging. 4: 1-7. DOI: 10.4071/1551-4897-4.1.1 |
0.384 |
|
| 2007 |
Su N, Zhang Z, Fay P, Moyer HP, Rajavel RD, Schulman J. Temperature-Dependent Microwave Performance Of Sb-Heterostructure Backward Diodes For Millimeter-Wave Detection International Journal of High Speed Electronics and Systems. 17: 105-110. DOI: 10.1142/9789812770332_0017 |
0.485 |
|
| 2007 |
Bernstein GH, Liu Q, Yan M, Sun Z, Kopp D, Porod W, Snider G, Fay P. Quilt packaging: High-density, high-speed interchip communications Ieee Transactions On Advanced Packaging. 30: 731-740. DOI: 10.1109/Tadvp.2007.901643 |
0.645 |
|
| 2007 |
Su N, Zhang Z, Schulman JN, Fay P. Temperature dependence of high frequency and noise performance of Sb-heterostructure millimeter-wave detectors Ieee Electron Device Letters. 28: 336-339. DOI: 10.1109/Led.2007.895377 |
0.498 |
|
| 2007 |
Tang Y, Amlani I, Orlov AO, Snider GL, Fay PJ. Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor Nanotechnology. 18. DOI: 10.1088/0957-4484/18/44/445203 |
0.382 |
|
| 2007 |
Su N, Fay P, Sinharoy S, Forbes D, Scheiman D. Characterization and modeling of InGaAs/InAsP thermophotovoltaic converters under high illumination intensities Journal of Applied Physics. 101: 64511. DOI: 10.1063/1.2713366 |
0.444 |
|
| 2007 |
Park S, Yu R, Chung S, Berger P, Thompson P, Fay P. Sensitivity of Si-based zero-bias backward diodes for microwave detection Electronics Letters. 43: 295. DOI: 10.1049/El:20070299 |
0.423 |
|
| 2006 |
Yang B, Fay P. Bias-enhanced lateral photoelectrochemical etching of GaN for the fabrication of undercut micromachined system structures Journal of Vacuum Science & Technology B. 24: 1337-1340. DOI: 10.1116/1.2198848 |
0.415 |
|
| 2006 |
Cao Y, Li X, Zhang J, Fay P, Kosel TH, Hall DC. Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric Ieee Electron Device Letters. 27: 317-319. DOI: 10.1109/Led.2006.872898 |
0.452 |
|
| 2006 |
Sun Z, Fay P. High-Gain, High-Efficiency Integrated Cavity-Backed Dipole Antenna at Ka-Band Ieee Antennas and Wireless Propagation Letters. 5: 459-462. DOI: 10.1109/Lawp.2006.885172 |
0.617 |
|
| 2005 |
Sankaralingam R, Fay P. Drift-enhanced dual-absorption PIN photodiodes Ieee Photonics Technology Letters. 17: 1513-1515. DOI: 10.1109/Lpt.2005.849243 |
0.382 |
|
| 2005 |
Sun Z, Fay P. Physics-based nonlinear circuit model for coplanar waveguides on silicon substrates Ieee Microwave and Wireless Components Letters. 15: 709-711. DOI: 10.1109/Lmwc.2005.856831 |
0.64 |
|
| 2005 |
Jin N, Yu R, Chung S, Berger PR, Thompson PE, Fay P. High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance Ieee Electron Device Letters. 26: 575-578. DOI: 10.1109/Led.2005.852738 |
0.386 |
|
| 2005 |
Cao Y, Zhang J, Li X, Kosel TH, Fay P, Hall DC, Zhang XB, Dupuis RD, Jasinski JB, Liliental-Weber Z. Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications Applied Physics Letters. 86: 62105. DOI: 10.1063/1.1861981 |
0.392 |
|
| 2004 |
Yang B, Fay P. Etch rate and surface morphology control in photoelectrochemical etching of GaN Journal of Vacuum Science & Technology B. 22: 1750-1754. DOI: 10.1116/1.1767828 |
0.335 |
|
| 2004 |
Xu Y, Fay P, Chow DH, Schulman JN. Experimental investigation of the temperature dependence of InAs-AlSb-GaSb Resonant Interband tunnel diodes Ieee Transactions On Electron Devices. 51: 1060-1064. DOI: 10.1109/Ted.2004.829863 |
0.387 |
|
| 2004 |
Li X, Cao Y, Hall DC, Fay P, Han B, Wibowo A, Pan N. GaAs MOSFET using InAlP native oxide as gate dielectric Ieee Electron Device Letters. 25: 772-774. DOI: 10.1109/Led.2004.838555 |
0.464 |
|
| 2004 |
Meyers RG, Fay P, Schulman JN, Thomas S, Chow DH, Zinck J, Boegeman YK, Deelman P. Bias and temperature dependence of Sb-based heterostructure millimeter-wave detectors with improved sensitivity Ieee Electron Device Letters. 25: 4-6. DOI: 10.1109/Led.2003.821601 |
0.386 |
|
| 2004 |
Li X, Cao Y, Hall DC, Fay P, Zhang X, Dupuis RD. Electrical characterization of native-oxide InAlP/GaAs metal-oxide- semiconductor heterostructures using impedance spectroscopy Journal of Applied Physics. 95: 4209-4212. DOI: 10.1063/1.1669078 |
0.374 |
|
| 2003 |
Jang JH, Cueva G, Sankaralingam R, Fay P, Hoke WE, Adesida I. Wavelength dependent characteristics of high-speed metamorphic photodiodes Ieee Photonics Technology Letters. 15: 281-283. DOI: 10.1109/Lpt.2002.806886 |
0.45 |
|
| 2002 |
Fay P, Schulman JN, Thomas S, Chow DH, Boegeman YK, Holabird KS. High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection Ieee Electron Device Letters. 23: 585-587. DOI: 10.1109/Led.2002.803760 |
0.442 |
|
| 2002 |
Jang J, Cueva G, Hoke WE, Lemonias PJ, Fay P, Adesida I. Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes Journal of Lightwave Technology. 20: 507-514. DOI: 10.1109/50.989001 |
0.393 |
|
| 2002 |
Fay P, Caneau C, Adesida I. High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers Ieee Transactions On Microwave Theory and Techniques. 50: 62-67. DOI: 10.1109/22.981247 |
0.392 |
|
| 2002 |
Fay P, Lu J, Xu Y, Dame N, Chow DH, Schulman JN. Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes Ieee Transactions On Electron Devices. 49: 19-24. DOI: 10.1109/16.974743 |
0.422 |
|
| 2001 |
Jang J, Cueva G, Dumka D, Hoke W, Lemonias P, Fay P, Adesida I. The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes Ieee Photonics Technology Letters. 13: 1097-1099. DOI: 10.1109/68.950747 |
0.327 |
|
| 2001 |
Fay P, Jiang L, Xu Y, Bernstein GH, Chow DH, Schulman JN, Dunlap HL, Santos HJdl. Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes Ieee Transactions On Electron Devices. 48: 1282-1284. DOI: 10.1109/16.925263 |
0.464 |
|
| 2001 |
Fay P, Lu J, Xu Y, Bernstein G, Gonzalez A, Mazumder P, Chow D, Schulman J. Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs Electronics Letters. 37: 758. DOI: 10.1049/El:20010547 |
0.401 |
|
| 2001 |
Jang J, Cueva G, Dumka D, Hoke W, Lemonias P, Fay P, Adesida I. Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates Electronics Letters. 37: 707. DOI: 10.1049/El:20010474 |
0.398 |
|
| 2000 |
Fay P, Stevens K, Elliot J, Pan N. Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs Ieee Electron Device Letters. 21: 141-143. DOI: 10.1109/55.830961 |
0.423 |
|
| 1999 |
Fay P, Stevens K, Elliot J, Pan N. Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gate metallization Ieee Electron Device Letters. 20: 554-556. DOI: 10.1109/55.798041 |
0.383 |
|
| 1999 |
Adesida I, Mahajan A, Cueva G, Fay P. Novel HEMT processing technologies and their circuit applications Solid-State Electronics. 43: 1333-1338. DOI: 10.1016/S0038-1101(99)00071-4 |
0.47 |
|
| 1998 |
Fay P, Wohlmuth W, Mahajan A, Caneau C, Chandrasekhar S, Adesida I. Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems Ieee Photonics Technology Letters. 10: 713-715. DOI: 10.1109/68.669343 |
0.352 |
|
| 1998 |
Fay P, Wohlmuth W, Mahajan A, Caneau C, Chanrasekhar S, Adesida I. A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies Ieee Photonics Technology Letters. 10: 582-584. DOI: 10.1109/68.662601 |
0.36 |
|
| 1998 |
Mahajan A, Arafa M, Fay P, Caneau C, Adesida I. Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP Ieee Transactions On Electron Devices. 45: 2422-2429. DOI: 10.1109/16.735718 |
0.463 |
|
| 1998 |
Mahajan A, Fay P, Arafa M, Adesida I. Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications Ieee Transactions On Electron Devices. 45: 338-340. DOI: 10.1109/16.658854 |
0.444 |
|
| 1998 |
Arafa M, Wohlmuth W, Fay P, Adesida I. Effect of diffraction and interference in submicron metal-semiconductor-metal photodetectors Ieee Transactions On Electron Devices. 45: 62-67. DOI: 10.1109/16.658812 |
0.367 |
|
| 1997 |
Wohlmuth W, Arafa M, Fay P, Seo J, Adesida I. Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters Japanese Journal of Applied Physics. 36: 652-656. DOI: 10.1143/Jjap.36.652 |
0.349 |
|
| 1997 |
Hannan M, Grundbacher R, Fay P, Adesida I, Giannetta RW, Wagner CJ, Melloch MR. Fabrication and transport study of finite lateral superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2821-2824. DOI: 10.1116/1.589735 |
0.4 |
|
| 1997 |
Wohlmuth W, Seo J, Fay P, Caneau C, Adesida I. A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector Ieee Photonics Technology Letters. 9: 1388-1390. DOI: 10.1109/68.623272 |
0.422 |
|
| 1997 |
Fay P, Wohlmuth W, Caneau C, Chandrasekhar S, Adesida I. High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers Ieee Photonics Technology Letters. 9: 991-993. DOI: 10.1109/68.593376 |
0.352 |
|
| 1997 |
Wohlmuth W, Fay P, Vaccaro K, Martin E, Adesida I. High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers Ieee Photonics Technology Letters. 9: 654-656. DOI: 10.1109/68.588184 |
0.34 |
|
| 1997 |
Mahajan A, Cueva G, Arafa M, Fay P, Adesida I. Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors Ieee Electron Device Letters. 18: 391-393. DOI: 10.1109/55.605449 |
0.435 |
|
| 1997 |
Mahajan A, Arafa M, Fay P, Caneau C, Adesida I. 0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor Ieee Electron Device Letters. 18: 284-286. DOI: 10.1109/55.585360 |
0.483 |
|
| 1997 |
Fay P, Arafa M, Wohlmuth W, Caneau C, Chandrasekhar S, Adesida I. Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers Journal of Lightwave Technology. 15: 1871-1879. DOI: 10.1109/50.633577 |
0.429 |
|
| 1997 |
Wohlmuth W, Arafa M, Fay P, Adesida I. InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes Applied Physics Letters. 70: 3026-3028. DOI: 10.1063/1.118738 |
0.36 |
|
| 1996 |
Wohlmuth W, Fay P, Adesida I. Dark current suppression in GaAs metal-semiconductor-metal photodetectors Ieee Photonics Technology Letters. 8: 1061-1063. DOI: 10.1109/68.508738 |
0.406 |
|
| 1996 |
Fay P, Wohlmuth W, Caneau C, Adesida I. 18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication systems Ieee Photonics Technology Letters. 8: 679-681. DOI: 10.1109/68.491593 |
0.366 |
|
| 1996 |
Arafa M, Fay P, Ismail K, Chu J, Meyerson B, Adesida I. DC and RF performance of 0.25 μm p-type SiGe MODFET Ieee Electron Device Letters. 17: 449-451. DOI: 10.1109/55.536289 |
0.437 |
|
| 1996 |
Arafa M, Fay P, Ismail K, Chu J, Meyerson B, Adesida I. High speed p-type SiGe modulation-doped field-effect transistors Ieee Electron Device Letters. 17: 124-126. DOI: 10.1109/55.485188 |
0.446 |
|
| 1996 |
Xiang A, Wohlmuth W, Fay P, Kang SM, Adesida I. Modeling of InGaAs MSM photodetector for circuit-level simulation Journal of Lightwave Technology. 14: 716-723. DOI: 10.1109/50.495150 |
0.35 |
|
| 1996 |
Wohlmuth WA, Arafa M, Mahajan A, Fay P, Adesida I. InGaAs metal‐semiconductor‐metal photodetectors with engineered Schottky barrier heights Applied Physics Letters. 69: 3578-3580. DOI: 10.1063/1.117212 |
0.364 |
|
| 1996 |
Mahajan A, Fay P, Caneau C, Adesida I. High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP Electronics Letters. 32: 1037. DOI: 10.1049/El:19960652 |
0.457 |
|
| 1996 |
Wohlmuth W, Fay P, Caneau C, Adesida I. Low dark current, long wavelength metal-semiconductor-metal photodetectors Electronics Letters. 32: 249. DOI: 10.1049/El:19960178 |
0.33 |
|
| 1995 |
Pan N, Elliott J, Hendriks H, Aucoin L, Fay P, Adesida I. InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition Applied Physics Letters. 66: 212-214. DOI: 10.1063/1.113137 |
0.418 |
|
| 1995 |
Fay P, Wohlmuth W, Caneau C, Adesida I. 15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 [micro sign]m wavelength Electronics Letters. 31: 755. DOI: 10.1049/El:19950484 |
0.405 |
|
| 1995 |
Arafa M, Ismail K, Fay P, Chu J, Meyerson B, Adesida I. High-transconductance p-type SiGe modulation-doped field-effect transistor Electronics Letters. 31: 680. DOI: 10.1049/El:19950453 |
0.447 |
|
| 1994 |
Fay P. Reactive ion etching-induced damage in InAlAs/InGaAs heterostructure field-effect transistors processed in HBr plasma Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12: 3322. DOI: 10.1116/1.587620 |
0.426 |
|
| 1993 |
Lyding JW, Brockenbrough RT, Fay PJ, Tucker JR, Hess K, Higman TK. Scanning tunneling microscope-based nanolithography for electronic device fabrication Advanced Optical Technologies. 10310: 111-126. DOI: 10.1117/12.183199 |
0.37 |
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| Show low-probability matches. |