| Year |
Citation |
Score |
| 2019 |
Wang T, Leburton JP, Hess K. Absence of coherence effects of carrier energy and velocity in GaAs+-AlGaAs-GaAs- tunnel structures. Physical Review. B, Condensed Matter. 33: 2906-2908. PMID 9938654 DOI: 10.1103/Physrevb.33.2906 |
0.331 |
|
| 2006 |
Barraza-Lopez S, Albrecht PM, Romero NA, Hess K. Ab initio study of semiconducting carbon nanotubes adsorbed on the Si(100) surface: Diameter- and registration-dependent atomic configurations and electronic properties Journal of Applied Physics. 100: 124304. DOI: 10.1063/1.2400404 |
0.665 |
|
| 2006 |
Lee J, Lee Y, Hess K. A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET's with deuterium treatment process Solid-State Electronics. 50: 149-154. DOI: 10.1016/J.Sse.2005.10.031 |
0.312 |
|
| 2005 |
Barraza-Lopez S, Rotkin SV, Li Y, Hess K. Conductance modulation of metallic carbon nanotubes by remote charged rings Europhysics Letters. 69: 1003-1009. DOI: 10.1209/Epl/I2004-10434-8 |
0.647 |
|
| 2005 |
Liu Y, Ng W, Choquette KD, Hess K. Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers Ieee Journal of Quantum Electronics. 41: 15-25. DOI: 10.1109/Jqe.2004.839239 |
0.48 |
|
| 2005 |
Hu S, Hess K. An Application of the Recombination and Generation Theory by Shockley, Read and Hall to Biological Ion Channels Journal of Computational Electronics. 4: 153-156. DOI: 10.1007/S10825-005-7128-3 |
0.681 |
|
| 2004 |
Rotkin SV, Hess K. Possibility of a metallic field-effect transistor Applied Physics Letters. 84: 3139-3141. DOI: 10.1063/1.1710717 |
0.335 |
|
| 2003 |
McMahon W, Haggag A, Hess K. Reliability scaling issues for nanoscale devices Ieee Transactions On Nanotechnology. 2: 33-38. DOI: 10.1109/Tnano.2003.808515 |
0.783 |
|
| 2003 |
Penzin O, Haggag A, McMahon W, Lyumkis E, Hess K. MOSFET degradation kinetics and its simulation Ieee Transactions On Electron Devices. 50: 1445-1450. DOI: 10.1109/Ted.2003.813333 |
0.771 |
|
| 2003 |
Liu Y, Ng W, Klein B, Hess K. Effects of the spatial nonuniformity of optical transverse modes on the modulation response of vertical-cavity surface-emitting lasers Ieee Journal of Quantum Electronics. 39: 99-108. DOI: 10.1109/Jqe.2002.806205 |
0.467 |
|
| 2003 |
Ng W, Liu Y, Hess K. Resonant-wavelength control and optical-confinement analysis for graded SCH VCSELs using a self-consistent effective-index method Journal of Lightwave Technology. 21: 555-560. DOI: 10.1109/Jlt.2003.808758 |
0.43 |
|
| 2003 |
Liu Y, Choquette KD, Hess K. The electrical turn-on characteristics of vertical-cavity surface-emitting lasers Applied Physics Letters. 83: 4104-4106. DOI: 10.1063/1.1628816 |
0.365 |
|
| 2002 |
Liu Y, Oyafuso F, Ng W, Hess K. Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase Journal of Computational Electronics. 1: 119-122. DOI: 10.1023/A:1020736416357 |
0.448 |
|
| 2002 |
McMahon W, Hess K. A Multi-Carrier Model for Interface Trap Generation Journal of Computational Electronics. 1: 395-398. DOI: 10.1023/A:1020716111756 |
0.703 |
|
| 2002 |
McMahon W, Haggag A, Hess K. A new paradigm for examining MOSFET failure modes Physica B-Condensed Matter. 314: 358-362. DOI: 10.1016/S0921-4526(01)01424-7 |
0.773 |
|
| 2002 |
Macucci M, Hess K. Numerical simulation of capacitance spectroscopy for multiple vertically stacked quantum dots Microelectronic Engineering. 63: 115-121. DOI: 10.1016/S0167-9317(02)00617-2 |
0.313 |
|
| 2002 |
Städele M, Fischer B, Tuttle BR, Hess K. Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs Solid-State Electronics. 46: 1027-1032. DOI: 10.1016/S0038-1101(02)00037-0 |
0.378 |
|
| 2001 |
Haggag A, McMahon W, Hess K, Fischer B, Register LF. Impact of scaling on CMOS chip failure rate, and design rules for hot carrier reliability Vlsi Design. 13: 111-115. DOI: 10.1155/2001/90787 |
0.771 |
|
| 2001 |
Hess K, Ravaioli U, Gupta M, Aluru N, Straaten TVD, Eisenberg RS. Simulation of Biological Ionic Channels by Technology Computer-Aided Design Vlsi Design. 13: 179-187. DOI: 10.1155/2001/25603 |
0.318 |
|
| 2001 |
Cheng K, Lee J, Chen Z, Shah SA, Hess K, Leburton JP, Lyding JW. Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1119-1123. DOI: 10.1116/1.1385687 |
0.318 |
|
| 2001 |
Cheng K, Hess K, Lyding JW. Deuterium passivation of interface traps in MOS devices Ieee Electron Device Letters. 22: 441-443. DOI: 10.1109/55.944333 |
0.321 |
|
| 2001 |
Cheng K, Hess K, Lyding JW. A new technique to quantify deuterium passivation of interface traps in MOS devices Ieee Electron Device Letters. 22: 203-205. DOI: 10.1109/55.919229 |
0.32 |
|
| 2001 |
Quay R, Hess K, Reuter R, Schlechtweg M, Grave T, Palankovski V, Selberherr S. Nonlinear electronic transport and device performance of HEMTs Ieee Transactions On Electron Devices. 48: 210-217. DOI: 10.1109/16.902718 |
0.365 |
|
| 2001 |
Hess K, Haggag A, McMahon W, Cheng K, Lee J, Lyding J. The physics of determining chip reliability Ieee Circuits and Devices Magazine. 17: 33-38. DOI: 10.1109/101.933789 |
0.762 |
|
| 2001 |
Cheng K, Hess K, Lyding JW. Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces Journal of Applied Physics. 90: 6536-6538. DOI: 10.1063/1.1412265 |
0.328 |
|
| 2001 |
Cheng K, Leburton JP, Hess K, Lyding JW. On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 79: 863-865. DOI: 10.1063/1.1389318 |
0.333 |
|
| 2001 |
Cheng K, Lee J, Hess K, Lyding JW. Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect Applied Physics Letters. 78: 1882-1884. DOI: 10.1063/1.1359143 |
0.344 |
|
| 2001 |
Städele M, Tuttle BR, Hess K. Tunneling through ultrathin SiO2 gate oxides from microscopic models Journal of Applied Physics. 89: 348-363. DOI: 10.1063/1.1330764 |
0.382 |
|
| 2000 |
Chen Z, Hess K, Lee J, Lyding JW, Rosenbaum E, Kizilyalli I, Chetlur S, Huang R. On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing Ieee Electron Device Letters. 21: 24-26. DOI: 10.1109/55.817441 |
0.358 |
|
| 2000 |
Register LF, Hess K. Improved algorithm for modeling collision broadening through a sequence of scattering events in semiclassical Monte Carlo Journal of Applied Physics. 87: 303-311. DOI: 10.1063/1.371861 |
0.321 |
|
| 2000 |
Städele M, Fischer B, Tuttle BR, Hess K. Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models Superlattices and Microstructures. 28: 517-524. DOI: 10.1006/Spmi.2000.0956 |
0.391 |
|
| 2000 |
Tuttle BR, Hess K, Register LF. Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress Superlattices and Microstructures. 27: 441-445. DOI: 10.1006/Spmi.2000.0859 |
0.361 |
|
| 2000 |
Städele M, Tuttle BR, Hess K, Register LF. Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides Superlattices and Microstructures. 27: 405-409. DOI: 10.1006/Spmi.2000.0850 |
0.372 |
|
| 2000 |
Tuttle BR, McMahon W, Hess K. Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors Superlattices and Microstructures. 27: 229-233. DOI: 10.1006/Spmi.1999.0804 |
0.716 |
|
| 1999 |
Hess K, Lee J, Chen Z, Lyding JW, Kim YK, Kim BS, Lee YH, Kim YW, Suh KP. An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes? Ieee Transactions On Electron Devices. 46: 1914-1916. DOI: 10.1109/16.784195 |
0.367 |
|
| 1999 |
Lee J, Epstein Y, Berti AC, Huber J, Hess K, Lyding JW. The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors Ieee Transactions On Electron Devices. 46: 1812-1813. DOI: 10.1109/16.777177 |
0.304 |
|
| 1999 |
Hess K, Tuttle B, Register F, Ferry DK. Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption Applied Physics Letters. 75: 3147-3149. DOI: 10.1063/1.125259 |
0.389 |
|
| 1999 |
Hess K. DesCArtES: Distributed Center for Advanced Electronics Simulations Journal of Nanoparticle Research. 1: 425-426. DOI: 10.1023/A:1010049529136 |
0.316 |
|
| 1999 |
Hess K, Register LF, McMahon W, Tuttle B, Aktas O, Ravaioli U, Lyding JW, Kizilyalli IC. Theory of channel hot-carrier degradation in MOSFETs Physica B: Condensed Matter. 272: 527-531. DOI: 10.1016/S0921-4526(99)00363-4 |
0.713 |
|
| 1999 |
Ferry DK, Goodnick SM, Hess K. Energy exchange in single-particle electron-electron scattering Physica B: Condensed Matter. 272: 538-541. DOI: 10.1016/S0921-4526(99)00335-X |
0.367 |
|
| 1999 |
Ferry DK, Hess K. Energy loss to bound hydrogen at the Si surface Physica B-Condensed Matter. 272: 535-537. DOI: 10.1016/S0921-4526(99)00334-8 |
0.368 |
|
| 1999 |
Register LF, Hess K. Theory of collision broadening through a sequence of scattering events with applications to semiclassical Monte Carlo Microelectronic Engineering. 47: 353-355. DOI: 10.1016/S0167-9317(99)00232-4 |
0.306 |
|
| 1998 |
Macucci M, Hess K. Corrections to the capacitance between two electrodes due to the presence of quantum confined system Vlsi Design. 6: 345-349. DOI: 10.1155/1998/92921 |
0.32 |
|
| 1998 |
Jakumeit J, Ravaioli U, Hess K. New approach to hot electron effects in Si-MOSFETs based on an evolutionary algorithm using a Monte Carlo like mutation operator Vlsi Design. 6: 307-311. DOI: 10.1155/1998/81023 |
0.334 |
|
| 1998 |
Jakumeit J, Duncan A, Ravaioli U, Hess K. Simulation of Si-MOSFETs with the mutation operator Monte Carlo method Vlsi Design. 8: 343-347. DOI: 10.1155/1998/80689 |
0.376 |
|
| 1998 |
Macucci M, Hess K. Shell-Filling Effects in Circular Quantum Dots Vlsi Design. 8: 443-447. DOI: 10.1155/1998/70137 |
0.309 |
|
| 1998 |
Richie DA, Allmen Pv, Hess K, Martin RM. Electronic Structure Calculations Using An Adaptive Wavelet Basis Vlsi Design. 8: 159-163. DOI: 10.1155/1998/62853 |
0.303 |
|
| 1998 |
Oyafuso F, Allmen Pv, Grupen M, Hess K. Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model Vlsi Design. 6: 367-371. DOI: 10.1155/1998/58451 |
0.326 |
|
| 1998 |
Grupen M, Hess K. The Coupled Optoelectronic Problems of Quantum Well Laser Operation Vlsi Design. 6: 355-362. DOI: 10.1155/1998/53869 |
0.316 |
|
| 1998 |
Oyafuso F, Allmen Pv, Grupen M, Hess K. Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator Vlsi Design. 8: 463-468. DOI: 10.1155/1998/30974 |
0.32 |
|
| 1998 |
Lee J, Aur S, Eklund R, Hess K, Lyding JW. Secondary ion mass spectroscopy characterization of the deuterium sintering process for enhanced-lifetime complementary metal-oxide-semiconductor transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1762-1766. DOI: 10.1116/1.581298 |
0.309 |
|
| 1998 |
Grupen M, Hess K. Simulation of carrier transport and nonlinearities in quantum-well laser diodes Ieee Journal of Quantum Electronics. 34: 120-140. DOI: 10.1109/3.655016 |
0.321 |
|
| 1998 |
Hess K, Kizilyalli IC, Lyding JW. Giant isotope effect in hot electron degradation of metal oxide silicon devices Ieee Transactions On Electron Devices. 45: 406-416. DOI: 10.1109/16.658674 |
0.37 |
|
| 1998 |
Hess K, Register LF, Tuttle B, Lyding J, Kizilyalli IC. Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime Physica E: Low-Dimensional Systems and Nanostructures. 3: 1-7. DOI: 10.1016/S1386-9477(98)00211-2 |
0.352 |
|
| 1998 |
Lyding JW, Hess K, Abeln GC, Thompson DS, Moore JS, Hersam MC, Foley ET, Lee J, Chen Z, Hwang ST, Choi H, Avouris P, Kizilyalli IC. Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology Applied Surface Science. 130: 221-230. DOI: 10.1016/S0169-4332(98)00054-3 |
0.351 |
|
| 1997 |
Kizilyalli IC, Lyding JW, Hess K. Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability Ieee Electron Device Letters. 18: 81-83. DOI: 10.1109/55.556087 |
0.358 |
|
| 1997 |
Register LF, Hess K. Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport Applied Physics Letters. 71: 1222-1224. DOI: 10.1063/1.119857 |
0.37 |
|
| 1997 |
Grupen M, Hess K. Severe gain suppression due to dynamic carrier heating in quantum well lasers Applied Physics Letters. 70: 808-810. DOI: 10.1063/1.118229 |
0.302 |
|
| 1997 |
Jakumeit J, Duncan A, Ravaioli U, Hess K. Calculation of the high energy tail of the electron distribution in Si-MOSFETs with an evolutionary algorithm Physica Status Solidi (B) Basic Research. 204: 517-520. DOI: 10.1002/1521-3951(199711)204:1<517::Aid-Pssb517>3.0.Co;2-R |
0.349 |
|
| 1996 |
Jakumeit J, Ravaioli U, Hess K. Calculation of hot electron distributions in silicon by means of an evolutionary algorithm Journal of Applied Physics. 80: 5061-5066. DOI: 10.1063/1.363551 |
0.334 |
|
| 1996 |
Shah P, Mitin V, Grupen M, Song GH, Hess K. Numerical simulation of wide band‐gap AlGaN/InGaN light‐emitting diodes for output power characteristics and emission spectra Journal of Applied Physics. 79: 2755-2761. DOI: 10.1063/1.361148 |
0.32 |
|
| 1996 |
Lyding JW, Hess K, Kizilyalli IC. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing Applied Physics Letters. 68: 2526-2528. DOI: 10.1063/1.116172 |
0.361 |
|
| 1995 |
Iafrate G, Hess K, Krieger J, Macucci M. Capacitive nature of atomic-sized structures. Physical Review B. 52: 10737-10739. PMID 9980157 DOI: 10.1103/Physrevb.52.10737 |
0.339 |
|
| 1995 |
Lee CH, Ravaioli U, Hess K, Mead CA, Hasler P. Simulation of a Long Term Memory Device with a Full Bandstructure Monte Carlo Approach Ieee Electron Device Letters. 16: 360-362. DOI: 10.1109/55.400738 |
0.384 |
|
| 1995 |
Macucci M, Hess K, Iafrate GJ. Simulation of electronic properties and capacitance of quantum dots Journal of Applied Physics. 77: 3267-3276. DOI: 10.1063/1.358680 |
0.322 |
|
| 1995 |
Register LF, Hess K. Simulation of carrier capture in quantum well lasers due to strong inelastic scattering Superlattices and Microstructures. 18: 223. DOI: 10.1006/Spmi.1995.1106 |
0.325 |
|
| 1994 |
Abramo A, Baudry L, Brunetti R, Castagne R, Dutton R, Engl WL, Fischetti MV, Goldsman N, Hackel M, Hamaguchi C, Hess K, Iizuka T, Kunikiyo T, Maziar C, Ramaswamy S, et al. A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon Ieee Transactions On Electron Devices. 41: 1646-1654. DOI: 10.1109/16.310119 |
0.335 |
|
| 1994 |
Sotirelis P, Hess K. Electron capture in GaAs quantum wells Physical Review B. 49: 7543-7547. DOI: 10.1103/Physrevb.49.7543 |
0.369 |
|
| 1994 |
Register LF, Hess K. Numerical simulation of electron transport in mesoscopic structures with weak dissipation Physical Review B. 49: 1900-1907. DOI: 10.1103/Physrevb.49.1900 |
0.367 |
|
| 1994 |
Yoder PD, Hess K. First-principles Monte Carlo simulation of transport in Si Semiconductor Science and Technology. 9: 852-854. DOI: 10.1088/0268-1242/9/5S/122 |
0.381 |
|
| 1994 |
Grupen M, Hess K. Self-consistent calculation of the modulation response for quantum well laser diodes Applied Physics Letters. 65: 2454-2456. DOI: 10.1063/1.112705 |
0.305 |
|
| 1994 |
Kosinovsky GA, Grupen M, Hess K. Effect of carrier charge imbalance on the threshold current in diode lasers with thin intrinsic quantum wells Applied Physics Letters. 65: 3218-3220. DOI: 10.1063/1.112417 |
0.311 |
|
| 1994 |
Averin DV, Register LF, Likharev KK, Hess K. Single-electron Coulomb exclusion on the atomic level Applied Physics Letters. 64: 126-128. DOI: 10.1063/1.110900 |
0.336 |
|
| 1993 |
Macucci M, Hess K, Iafrate GJ. Electronic energy spectrum and the concept of capacitance in quantum dots. Physical Review B. 48: 17354-17363. PMID 10008347 DOI: 10.1103/Physrevb.48.17354 |
0.377 |
|
| 1993 |
Lyding JW, Brockenbrough RT, Fay PJ, Tucker JR, Hess K, Higman TK. Scanning tunneling microscope-based nanolithography for electronic device fabrication Advanced Optical Technologies. 10310: 111-126. DOI: 10.1117/12.183199 |
0.342 |
|
| 1993 |
Tammaro D, Hess K, Capasso F. Γ-X phonon-assisted thermionic currents in the GaAs/Al xGa1-xAs interface system Journal of Applied Physics. 73: 8536-8543. DOI: 10.1063/1.353383 |
0.337 |
|
| 1992 |
Bude J, Hess K, Iafrate GJ. Impact ionization in semiconductors: Effects of high electric fields and high scattering rates. Physical Review B. 45: 10958-10964. PMID 10001017 DOI: 10.1103/Physrevb.45.10958 |
0.331 |
|
| 1992 |
Macucci M, Hess K. Conditions for the additivity of conductance for parallel mesoscopic constrictions Physical Review B. 46: 15357-15364. DOI: 10.1103/Physrevb.46.15357 |
0.309 |
|
| 1992 |
Patil MB, Ravaioli U, Hess K, Hueschen M. Monte Carlo simulation of InGaAs/AlGaAs/GaAs real-space transfer transistors Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/139 |
0.34 |
|
| 1992 |
Bude J, Hess K, Iafrate GJ. Impact ionization: beyond the Golden Rule Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/132 |
0.31 |
|
| 1992 |
Yoder PD, Higman JM, Bude J, Hess K. Monte Carlo simulation of hot electron transport in Si using a unified pseudopotential description of the crystal Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/092 |
0.363 |
|
| 1992 |
Seki S, Sotirelis P, Hess K, Yamanaka T, Yokoyama K. Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers Applied Physics Letters. 61: 2147-2149. DOI: 10.1063/1.108302 |
0.304 |
|
| 1991 |
Register LF, Ravaioli U, Hess K. Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time-dependent Schrödinger equation Journal of Applied Physics. 69: 7153-7158. DOI: 10.1063/1.347606 |
0.306 |
|
| 1991 |
Higman JM, Bude J, Hess K. Electronic transport in semiconductors at high energy Computer Physics Communications. 67: 93-104. DOI: 10.1016/0010-4655(91)90223-8 |
0.378 |
|
| 1990 |
Stanton CJ, Bailey DW, Hess K. Femtosecond-pump, continuum-probe nonlinear absorption in GaAs Physical Review Letters. 65: 231-234. DOI: 10.1103/Physrevlett.65.231 |
0.33 |
|
| 1990 |
Bailey DW, Stanton CJ, Hess K. Numerical studies of femtosecond carrier dynamics in GaAs Physical Review B. 42: 3423-3434. DOI: 10.1103/Physrevb.42.3423 |
0.361 |
|
| 1990 |
Chen D, Kan EC, Hess K. Field-induced anisotropic distribution functions and semiconductor transport equations with tensor-form coefficients Journal of Applied Physics. 68: 5360-5362. DOI: 10.1063/1.347032 |
0.333 |
|
| 1990 |
Boots HMJ, Schuurmans MFH, Arnold D, Higman JM, Hess K. Monte Carlo Simulation Of Hot Electrons In Silicon P-I-N Cold Cathodes Applied Physics Letters. 57: 2446-2448. DOI: 10.1063/1.103871 |
0.368 |
|
| 1989 |
Higman JM, Hess K, Hwang CG, Dutton RW. Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs Ieee Transactions On Electron Devices. 36: 930-937. DOI: 10.1109/16.299675 |
0.391 |
|
| 1989 |
Kuzuhara M, Kim K, Hess K. Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors Ieee Transactions On Electron Devices. 36: 118-123. DOI: 10.1109/16.21190 |
0.356 |
|
| 1989 |
Mason BA, Hess K. Quantum Monte Carlo calculations of electron dynamics in dissipative solid-state systems using real-time path integrals Physical Review B. 39: 5051-5069. DOI: 10.1103/Physrevb.39.5051 |
0.384 |
|
| 1989 |
Arnold D, Hess K, Higman T, Coleman JJ, Iafrate GJ. Dynamics of heterostructure hot-electron diodes Journal of Applied Physics. 66: 1423-1427. DOI: 10.1063/1.344446 |
0.39 |
|
| 1989 |
Sols F, MacUcci M, Ravaioli U, Hess K. Theory for a quantum modulated transistor Journal of Applied Physics. 66: 3892-3906. DOI: 10.1063/1.344032 |
0.397 |
|
| 1989 |
Higman JM, Kim K, Hess K, Zutphen Tv, Boots HMJ. Monte Carlo simulation of Si and GaAs avalanche electron emitting diodes Journal of Applied Physics. 65: 1384-1386. DOI: 10.1063/1.342988 |
0.397 |
|
| 1989 |
Sols F, Macucci M, Ravaioli U, Hess K. On the possibility of transistor action based on quantum interference phenomena Applied Physics Letters. 54: 350-352. DOI: 10.1063/1.100966 |
0.335 |
|
| 1989 |
Kuzuhara M, Itoh T, Hess K. Ensemble Monte Carlo simulation of sub-0.1μm gate length GaAs MESFETs Solid-State Electronics. 32: 1857-1861. DOI: 10.1016/0038-1101(89)90325-0 |
0.37 |
|
| 1989 |
Educato JL, Bailey DW, Sugg A, Hess K, Leburton JP. Intersubband dynamics in modulation doped quantum wells Solid State Electronics. 32: 1615-1619. DOI: 10.1016/0038-1101(89)90283-9 |
0.364 |
|
| 1989 |
Bailey DW, Stanton CJ, Hess K, LaGasse MJ, Schoenlein RW, Fujimoto JG. Femtosecond studies of intervalley scattering in GaAs and AlxGa1-xAs Solid State Electronics. 32: 1491-1495. DOI: 10.1016/0038-1101(89)90262-1 |
0.333 |
|
| 1989 |
Iafrate GJ, Krieger JB, Pevzner VB, Hess K. Inelastic hot-electron Bloch scattering from quantum-confined systems Solid-State Electronics. 32: 1119-1121. DOI: 10.1016/0038-1101(89)90200-1 |
0.365 |
|
| 1988 |
Higman JM, Kizilyalli IC, Hess K. Nonlocality of the electron ionization coefficient in n-MOSFETs: an analytic approach Ieee Electron Device Letters. 9: 399-401. DOI: 10.1109/55.757 |
0.357 |
|
| 1988 |
Stanton CJ, Bailey DW, Hess K. Monte Carlo Modeling of Femtosecond Relaxation Processes in AlGaAs/GaAs Quantum Wells Ieee Journal of Quantum Electronics. 24: 1614-1627. DOI: 10.1109/3.7092 |
0.401 |
|
| 1988 |
Stanton CJ, Bailey DW, Hess K, Chang YC. Band-structure effects on the femtosecond energy relaxation of photoexcited electrons in AlxGa1-xAs/GaAs quantum wells Physical Review B. 37: 6575-6578. DOI: 10.1103/Physrevb.37.6575 |
0.384 |
|
| 1988 |
Higman TK, Miller LM, Favaro ME, Emanuel MA, Hess K, Coleman JJ. Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode Applied Physics Letters. 53: 1623-1625. DOI: 10.1063/1.99931 |
0.357 |
|
| 1988 |
Arnold D, Hess K, Iafrate GJ. Electron transport in heterostructure hot‐electron diodes Applied Physics Letters. 53: 373-375. DOI: 10.1063/1.99898 |
0.366 |
|
| 1988 |
Kim K, Hess K, Capasso F. Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers Applied Physics Letters. 52: 1167-1169. DOI: 10.1063/1.99194 |
0.37 |
|
| 1988 |
Kuzuhara M, Kim K, Arnold D, Hess K. Ballistic electron transport across collector barriers in AlGaAs/GaAs hot‐electron transistors Applied Physics Letters. 52: 1252-1254. DOI: 10.1063/1.99172 |
0.392 |
|
| 1988 |
Kim K, Hess K. Electron transport in AlGaAs/GaAs tunneling hot electron transfer amplifiers Journal of Applied Physics. 64: 3057-3062. DOI: 10.1063/1.341570 |
0.396 |
|
| 1988 |
Brennan KF, Park DH, Hess K, Littlejohn MA. Theory of the velocity-field relation in AlGaAs Journal of Applied Physics. 63: 5004-5008. DOI: 10.1063/1.340446 |
0.341 |
|
| 1988 |
Kizilyalli IC, Hess K. Ensemble Monte Carlo simulation of velocity modulation transistors (VMT) and real space transfer (NERFET, CHINT) devices Superlattices and Microstructures. 4: 287-288. DOI: 10.1016/0749-6036(88)90167-X |
0.327 |
|
| 1988 |
Arnold D, Hess K. The effect of reflecting contacts on high field transport Solid State Electronics. 31: 593-594. DOI: 10.1016/0038-1101(88)90348-6 |
0.38 |
|
| 1988 |
Emanuel MA, Higman TK, Higman JM, Kolodzey JM, Coleman JJ, Hess K. Theoretical and experimental investigations of the heterostructure hot electron diode Solid State Electronics. 31: 589-592. DOI: 10.1016/0038-1101(88)90347-4 |
0.384 |
|
| 1988 |
Bailey DW, Stanton CJ, Artaki MA, Hess K, Wise FW, Tang CL. Ensemble Monte Carlo simulations of femtosecond energy relaxation of photoexcited electrons in bulk GaAs Solid State Electronics. 31: 467-470. DOI: 10.1016/0038-1101(88)90320-6 |
0.362 |
|
| 1988 |
Artaki M, Hess K. Electron transport in GaAs/AlxGa1−xAs heterojunctions at low temperatures Solid-State Electronics. 31: 383-386. DOI: 10.1016/0038-1101(88)90302-4 |
0.376 |
|
| 1988 |
Kizilyalli IC, Hess K, Higman T, Emanuel M, Coleman JJ. Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices Solid State Electronics. 31: 355-357. DOI: 10.1016/0038-1101(88)90295-X |
0.368 |
|
| 1988 |
Kim K, Hess K, Capasso F. Simulations of nonlinear transport in AlGaAs/GaAs single well heterostructures Solid State Electronics. 31: 349-350. DOI: 10.1016/0038-1101(88)90293-6 |
0.343 |
|
| 1988 |
Hess K. Real space transfer: Generalized approach to transport in confined geometries Solid State Electronics. 31: 319-324. DOI: 10.1016/0038-1101(88)90286-9 |
0.391 |
|
| 1988 |
Kim K, Hess K. Ensemble Monte Carlo simulation of semiclassical nonlinear electron transport across heterojunction band discontinuities Solid State Electronics. 31: 877-885. DOI: 10.1016/0038-1101(88)90041-X |
0.375 |
|
| 1987 |
Higman TK, Manion SJ, Kizilyalli IC, Emanuel MA, Hess K, Coleman JJ. Observation of the transition associated with real-space transfer of a two-dimensional electron gas to a three-dimensional electron distribution in semiconductor heterolayers. Physical Review. B, Condensed Matter. 36: 9381-9383. PMID 9942826 DOI: 10.1103/Physrevb.36.9381 |
0.317 |
|
| 1987 |
Manion SJ, Artaki M, Emanuel MA, Coleman JJ, Hess K. Electron-energy-loss rates in AlxGa Physical Review B. 35: 9203-9208. PMID 9941318 DOI: 10.1103/Physrevb.35.9203 |
0.319 |
|
| 1987 |
Higman TK, Higman JM, Emanuel MA, Hess K, Coleman JJ, Kolodzey J. VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode Ieee Transactions On Electron Devices. 34: 2381. DOI: 10.1109/T-Ed.1987.23309 |
0.318 |
|
| 1987 |
Arnold DJ, Hess K. The effect of reflecting contacts on high-field transport Ieee Transactions On Electron Devices. 34: 1978-1982. DOI: 10.1109/T-Ed.1987.23184 |
0.343 |
|
| 1987 |
Kizilyalli IC, Hess K, Iafrate GJ, Smith D. Dynamics Of Electron Transfer Between Two Adjacent Channels As Calculated By An Ensemble Monte Carlo Method Compel-the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 6: 93-97. DOI: 10.1108/Eb010307 |
0.354 |
|
| 1987 |
Kim K, Hess K, Capasso F. New effects of structure in momentum and real space on nonlinear transport across heterojunction band discontinuities Applied Physics Letters. 51: 508-510. DOI: 10.1063/1.98381 |
0.31 |
|
| 1987 |
Brennan K, Hess K, Capasso F. Physics of the enhancement of impact ionization in multiquantum well structures Applied Physics Letters. 50: 1897-1899. DOI: 10.1063/1.97679 |
0.348 |
|
| 1987 |
Higman TK, Higman JM, Emanuel MA, Hess K, Coleman JJ. Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes Journal of Applied Physics. 62: 1495-1499. DOI: 10.1063/1.339630 |
0.324 |
|
| 1987 |
Bailey DW, Artaki MA, Stanton CJ, Hess K. Ensemble Monte Carlo simulations of femtosecond thermalization of low-energy photoexcited electrons in GaAs quantum wells Journal of Applied Physics. 62: 4638-4641. DOI: 10.1063/1.339012 |
0.381 |
|
| 1987 |
Arnold D, Kim K, Hess K. Effects of field fluctuation on impact ionization rates in semiconductor devices due to the discreteness and distribution of dopants Journal of Applied Physics. 61: 1456-1459. DOI: 10.1063/1.338076 |
0.337 |
|
| 1987 |
Kizilyalli IC, Hess K, Iafrate GJ. Electron transfer between adjacent channels simulated by ensemble Monte Carlo methods Journal of Applied Physics. 61: 2395-2398. DOI: 10.1063/1.337956 |
0.357 |
|
| 1987 |
Mason BA, Hess K, Cline RE, Wolynes PG. A new technique for the calculation of real-time path integrals and applications to electron transport Superlattices and Microstructures. 3: 421-428. DOI: 10.1016/0749-6036(87)90217-5 |
0.351 |
|
| 1986 |
Kizilyalli IC, Hess K, Larson JL, Widiger DJ. IIA-1 scaling and transient properties of high electron mobility transistors Ieee Transactions On Electron Devices. 33: 1838-1838. DOI: 10.1109/T-Ed.1986.22758 |
0.318 |
|
| 1986 |
Kizilyalli IC, Hess K, Larson JL, Widiger DJ. Scaling Properties of High Electron Mobility Transistors Ieee Transactions On Electron Devices. 33: 1427-1433. DOI: 10.1109/T-Ed.1986.22690 |
0.327 |
|
| 1986 |
Yokoyama K, Hess K. Monte carlo study of electronic transport in Al1-xGaxAs/GaAs single-well heterostructures Physical Review B. 33: 5595-5606. DOI: 10.1103/Physrevb.33.5595 |
0.387 |
|
| 1986 |
Hess K, Higman TK, Emanuel MA, Coleman JJ. New ultrafast switching mechanism in semiconductor heterostructures Journal of Applied Physics. 60: 3775-3777. DOI: 10.1063/1.337540 |
0.342 |
|
| 1986 |
Kim K, Hess K. Simulations of electron impact ionization rate in GaAs in nonuniform electric fields Journal of Applied Physics. 60: 2626-2629. DOI: 10.1063/1.337135 |
0.373 |
|
| 1986 |
Martin PA, Hess K, Emanuel M, Coleman JJ. Deep-level transient spectroscopy studies of defects in GaAs-AlGaAs superlattices Journal of Applied Physics. 60: 2882-2885. DOI: 10.1063/1.337073 |
0.344 |
|
| 1986 |
Kim K, Kahen K, Leburton JP, Hess K. Band-structure dependence of impact ionization rate in GaAs Journal of Applied Physics. 59: 2595-2596. DOI: 10.1063/1.337011 |
0.305 |
|
| 1986 |
Yokoyama K, Hess K. Calculation of warm electron transport in AlGaAs/GaAs single heterostructures using a Monte Carlo method Journal of Applied Physics. 59: 3798-3802. DOI: 10.1063/1.336769 |
0.396 |
|
| 1986 |
Wang T, Hess K, Iafrate GJ. Monte Carlo simulations of hot‐electron spectroscopy in planar‐doped barrier transistors Journal of Applied Physics. 59: 2125-2128. DOI: 10.1063/1.336349 |
0.373 |
|
| 1986 |
Higman J, Hess K. Comment on the use of the electron temperature concept for nonlinear transport problems in semiconductor p-n junctions Solid-State Electronics. 29: 915-918. DOI: 10.1016/0038-1101(86)90013-4 |
0.329 |
|
| 1985 |
Widiger DJ, Kizilyalli IC, Hess K, Coleman JJ. Two-dimensional transient simulation of an idealized high electron mobility transistor Ieee Transactions On Electron Devices. 32: 1092-1102. DOI: 10.1109/T-Ed.1985.22080 |
0.402 |
|
| 1985 |
Robbins VM, Wang T, Brennan KF, Hess K, Stillman GE. Electron and hole impact ionization coefficients in (100) and in (111) Si Journal of Applied Physics. 58: 4614-4617. DOI: 10.1063/1.336229 |
0.348 |
|
| 1985 |
Wang T, Hess K. Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method Journal of Applied Physics. 57: 5336-5339. DOI: 10.1063/1.334851 |
0.347 |
|
| 1985 |
Brennan K, Hess K, Chang YC. Theory of steady-state high-field hole transport in GaSb and Al xGa1-xSb: The impact ionization resonance Journal of Applied Physics. 57: 1971-1977. DOI: 10.1063/1.334381 |
0.352 |
|
| 1985 |
Artaki M, Hess K. Monte Carlo calculations of electron transport in GaAs/AlGaAs superlattices Superlattices and Microstructures. 1: 489-493. DOI: 10.1016/S0749-6036(85)80020-3 |
0.355 |
|
| 1985 |
Manion SJ, Costrini G, Emanuel MA, Coleman JJ, Hess K. Hot electron deep level transient spectroscopy Superlattices and Microstructures. 1: 481-483. DOI: 10.1016/S0749-6036(85)80018-5 |
0.317 |
|
| 1985 |
Widiger D, Kizilyalli IC, Hess K, Coleman JJ. Two-dimensional numerical analysis of the high electron mobility transistor Superlattices and Microstructures. 1: 465-470. DOI: 10.1016/S0749-6036(85)80016-1 |
0.38 |
|
| 1985 |
Stillman GE, Robbins VM, Hess K. Impact ionization in InP and GaAs Physica B-Condensed Matter. 134: 241-246. DOI: 10.1016/0378-4363(85)90348-1 |
0.337 |
|
| 1984 |
Widiger D, Hess K, Coleman JJ. Two-Dimensional Numerical Analysis of the High Electron Mobility Transistor Ieee Electron Device Letters. 5: 266-269. DOI: 10.1109/Edl.1984.25913 |
0.401 |
|
| 1984 |
Brennan K, Hess K. Theory of high-field transport of holes in GaAs and InP Physical Review B. 29: 5581-5590. DOI: 10.1103/Physrevb.29.5581 |
0.385 |
|
| 1984 |
Wang T, Hess K. Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs Journal of Applied Physics. 56: 2793-2795. DOI: 10.1063/1.333811 |
0.315 |
|
| 1984 |
Brennan K, Hess K, Iafrate GJ. Monte Carlo investigation of transient hole transport in GaAs Journal of Applied Physics. 55: 3632-3635. DOI: 10.1063/1.332912 |
0.354 |
|
| 1984 |
Brennan K, Hess K. High field transport in GaAs, InP and InAs Solid State Electronics. 27: 347-357. DOI: 10.1016/0038-1101(84)90168-0 |
0.398 |
|
| 1983 |
Brennan K, Hess K, Tang JY-, Iafrate GJ. Transient electronic transport in InP under the condition of high-energy electron injection Ieee Transactions On Electron Devices. 30: 1750-1754. DOI: 10.1109/T-Ed.1983.21440 |
0.386 |
|
| 1983 |
Brennan K, Hess K, Iafrate GJ. Monte Carlo Simulation of Reflecting Contact Behavior on Ballistic Device Speed Ieee Electron Device Letters. 4: 332-334. DOI: 10.1109/Edl.1983.25752 |
0.361 |
|
| 1983 |
Ekenberg U, Hess K. Impurity-band tails in superlattices Physical Review B. 27: 3445-3450. DOI: 10.1103/Physrevb.27.3445 |
0.32 |
|
| 1983 |
Tang JY, Hess K. Theory of hot electron emission from silicon into silicon dioxide Journal of Applied Physics. 54: 5145-5151. DOI: 10.1063/1.332738 |
0.409 |
|
| 1983 |
Tang JY, Hess K. Impact ionization of electrons in silicon (steady state) Journal of Applied Physics. 54: 5139-5144. DOI: 10.1063/1.332737 |
0.395 |
|
| 1983 |
Martin PA, Meehan K, Gavrilovic P, Hess K, Holonyak N, Coleman JJ. Transient capacitance spectroscopy on large quantum well heterostructures Journal of Applied Physics. 54: 4689-4691. DOI: 10.1063/1.332633 |
0.315 |
|
| 1983 |
Leburton J, Hess K. High energy diffusion equation for polar semiconductors Physica B-Condensed Matter. 211-213. DOI: 10.1016/0378-4363(83)90484-9 |
0.343 |
|
| 1983 |
Hsieh TC, Hess K, Coleman JJ, Dapkus PD. Carrier density distribution in modulation doped GaAs-AlxGa1-xAs quantum well heterostructures Solid State Electronics. 26: 1173-1176. DOI: 10.1016/0038-1101(83)90145-4 |
0.382 |
|
| 1983 |
Iafrate GJ, Malik RJ, Tang JY, Hess K. Transient transport and transferred electron behavior in gallium arsenide under the condition of high-energy electron injection Solid State Communications. 45: 255-258. DOI: 10.1016/0038-1098(83)90475-1 |
0.348 |
|
| 1983 |
Leburton J, Tang J, Hess K. Energy diffusion equation for an electron gas interacting with polar optical phonons: Non-parabolic case Solid State Communications. 45: 517-519. DOI: 10.1016/0038-1098(83)90166-7 |
0.34 |
|
| 1982 |
Keever M, Kopp W, Drummond TJ, Morkoç H, Hess K. Current Transport in Modulation-Doped AlxGa1-xAs/GaAs Heterojunction Structures at Moderate Field Strengths Japanese Journal of Applied Physics. 21: 1489-1495. DOI: 10.1143/Jjap.21.1489 |
0.341 |
|
| 1982 |
Littlejohn MA, Kwapien WM, Glisson TH, Hauser JR, Hess K. EFFECTS OF BAND BENDING ON REAL SPACE TRANSFER IN GaAs-Al//xGa//1// minus //xAs LAYERED HETEROSTURECTURES Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 445-448. DOI: 10.1116/1.582623 |
0.309 |
|
| 1982 |
Tang JY, Hess K, Iafrate GJ, Malik R. VIB-9 high energy injection and transient electron transport in gallium arsenide Ieee Transactions On Electron Devices. 29: 1710-1711. DOI: 10.1109/T-Ed.1982.21011 |
0.321 |
|
| 1982 |
Keever M, Hess K, Ludowise M. Fast Switching and Storage in GaAs-Al—AlxGa1-xAs Heterojunction Layers Ieee Electron Device Letters. 3: 297-300. DOI: 10.1109/Edl.1982.25575 |
0.315 |
|
| 1982 |
Sankey OF, Dow JD, Hess K. Theory of resonant scattering in semiconductors due to impurity central‐cell potentials Applied Physics Letters. 41: 664-666. DOI: 10.1063/1.93606 |
0.31 |
|
| 1982 |
Holonyak N, Vojak BA, Morkoç H, Drummond TJ, Hess K. Stimulated emission in a degenerately doped GaAs quantum well Applied Physics Letters. 40: 658-660. DOI: 10.1063/1.93232 |
0.333 |
|
| 1982 |
Coleman PD, Freeman J, Morkoç H, Hess K, Streetman B, Keever M. Demonstration of a new oscillator based on real-space transfer in heterojunctions Applied Physics Letters. 40: 493-495. DOI: 10.1063/1.93154 |
0.328 |
|
| 1982 |
Tang JY, Hess K, Holonyak N, Coleman JJ, Dapkus PD. The dynamics of electron‐hole collection in quantum well heterostructures Journal of Applied Physics. 53: 6043-6046. DOI: 10.1063/1.331554 |
0.349 |
|
| 1982 |
Hess K, Tang JY, Brennan K, Shichijo H, Stillman GE. Reply to ’’Comment on ’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band‐structure dependent transport and impact ionization in GaAs’ ’’ Journal of Applied Physics. 53: 3327-3329. DOI: 10.1063/1.330994 |
0.344 |
|
| 1982 |
Keever M, Drummond TJ, Morkoç H, Hess K, Streetman BG, Ludowise M. Hall effect and mobility in heterojunction layers Journal of Applied Physics. 53: 1034-1036. DOI: 10.1063/1.330547 |
0.316 |
|
| 1982 |
Hess K. ELECTRON TRANSPORT IN HETEROJUNCTIONS AND SUPERLATTICES Physica B: Physics of Condensed Matter &Amp; C: Atomic, Molecular and Plasma Physics, Optics. 117: 723-728. DOI: 10.1016/0378-4363(83)90635-6 |
0.338 |
|
| 1982 |
Mon KK, Hess K. Resonance impact ionization in superlattices Solid State Electronics. 25: 491-492. DOI: 10.1016/0038-1101(82)90162-9 |
0.333 |
|
| 1982 |
Jones WT, Hess K, Iafrate GJ. Hot electron diffusion in fine line semiconductor devices Solid-State Electronics. 25: 1017-1021. DOI: 10.1016/0038-1101(82)90026-0 |
0.348 |
|
| 1981 |
Hess K. Ballistic Electron Transport in Semiconductor Ieee Transactions On Electron Devices. 28: 937-940. DOI: 10.1109/T-Ed.1981.20462 |
0.351 |
|
| 1981 |
Hess K. Comment on “Effect of Collisional Broadening on Monte Carlo Simulations of High-Field Transport in Semiconductor Devices” Ieee Electron Device Letters. 2: 297-298. DOI: 10.1109/Edl.1981.25440 |
0.335 |
|
| 1981 |
Shichijo H, Hess K. Band-structure-dependent transport and impact ionization in GaAs Physical Review B. 23: 4197-4207. DOI: 10.1103/Physrevb.23.4197 |
0.374 |
|
| 1981 |
Dapkus PD, Coleman JJ, Laidig WD, Holonyak N, Vojak BA, Hess K. Continuous room-temperature photopumped laser operation of modulation-doped AlxGa1-xAs/GaAs superlattices Applied Physics Letters. 38: 118-120. DOI: 10.1063/1.92295 |
0.321 |
|
| 1981 |
Shichijo H, Hess K, Stillman GE. Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures Applied Physics Letters. 38: 89-91. DOI: 10.1063/1.92266 |
0.367 |
|
| 1981 |
Keever M, Shichijo H, Hess K, Banerjee S, Witkowski L, Morkoç H, Streetman BG. Measurements of hot‐electron conduction and real‐space transfer in GaAs‐AlxGa1−xAs heterojunction layers Applied Physics Letters. 38: 36-38. DOI: 10.1063/1.92117 |
0.319 |
|
| 1981 |
Drummond TJ, Kopp W, Morkoç H, Hess K, Cho AY, Streetman BG. Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures Journal of Applied Physics. 52: 5689-5690. DOI: 10.1063/1.329504 |
0.332 |
|
| 1981 |
Drummond TJ, Morkoç H, Hess K, Cho AY. Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics. 52: 5231-5234. DOI: 10.1063/1.329426 |
0.356 |
|
| 1981 |
Vojak BA, Holonyak N, Laidig WD, Hess K, Coleman JJ, Dapkus PD. PHONON CONTRIBUTION TO METALORGANIC CHEMICAL VAPOR DEPOSITED Al//x Ga//1// minus //xAs-GaAs QUANTUM-WELL HETEROSTRUCTURE LASER OPERATION. Journal of Applied Physics. 52: 959-968. DOI: 10.1063/1.328786 |
0.325 |
|
| 1981 |
Tang JY, Shichijo H, Hess K, Iafrate GJ. Band-Structure Dependent Impact Ionization In Silicon And Gallium Arsenide Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:1981707 |
0.345 |
|
| 1981 |
Drummond T, Keever M, Kopp W, Morkoç H, Hess K, Streetman B, Cho A. Field dependence of mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields Electronics Letters. 17: 545. DOI: 10.1049/El:19810381 |
0.344 |
|
| 1981 |
Keever M, Drummond T, Hess K, Morkoc H, Streetman B. Time dependence of current at high electric fields in AlxGa1−xAs-GaAs heterojunction layers Electronics Letters. 17: 93. DOI: 10.1049/El:19810067 |
0.345 |
|
| 1981 |
Hess K, Dow JD. Deformation potentials of bulk semiconductors Solid State Communications. 40: 371-373. DOI: 10.1016/0038-1098(81)90840-1 |
0.307 |
|
| 1981 |
Laidig WD, Holonyak N, Camras MD, Vojak BA, Hess K, Coleman JJ, Dapkus PD. Quenching of stimulated phonon emission in AlxGa1-xAs-GaAs quantum-well heterostructures Solid State Communications. 38: 301-304. DOI: 10.1016/0038-1098(81)90466-X |
0.342 |
|
| 1980 |
Hess K, Shichijo H. The Charge-Handling Capacity of Buried-Channel Structures Under Hot-Electron Conditions Ieee Transactions On Electron Devices. 27: 503-504. DOI: 10.1109/T-Ed.1980.19889 |
0.317 |
|
| 1980 |
Coleman JJ, Dapkus PD, Vojak BA, Laidig WD, Holonyak N, Hess K. Induced phonon-sideband laser operation of large-quantum-well Al xGa1-xAs-GaAs heterostructures (Lz ∼200-500 Å) Applied Physics Letters. 37: 15-17. DOI: 10.1063/1.91683 |
0.33 |
|
| 1980 |
Holonyak N, Kolbas RM, Laidig WD, Vojak BA, Hess K, Dupuis RD, Dapkus PD. PHONON-ASSISTED RECOMBINATION AND STIMULATED EMISSION IN QUANTUM-WELL Al//xGa//1// minus //xAs-GaAs HETEROSTRUCTURES. Journal of Applied Physics. 51: 1328-1337. DOI: 10.1063/1.327818 |
0.315 |
|
| 1980 |
Glisson TH, Hauser JR, Littlejohn MA, Hess K, Streetman BG, Shichijo H. Monte Carlo simulation of real-space electron transfer in GaAs-AlGaAs heterostructures Journal of Applied Physics. 51: 5445-5449. DOI: 10.1063/1.327500 |
0.378 |
|
| 1980 |
Chin R, Holonyak N, Stillman GE, Tang JY, Hess K. Impact ionisation in multilayered heterojunction structures Electronics Letters. 16: 467-469. DOI: 10.1049/El:19800329 |
0.356 |
|
| 1980 |
Shichijo H, Hess K, Stillman GE. Orientation dependence of ballistic electron transport and impact ionisation Electronics Letters. 16: 208-210. DOI: 10.1049/El:19800149 |
0.367 |
|
| 1980 |
Shichijo H, Hess K, Streetman BG. Real-space electron transfer by thermionic emission in GaAsAlxGa1−xAs heterostructures: Analytical model for large layer widths Solid-State Electronics. 23: 817-822. DOI: 10.1016/0038-1101(80)90097-0 |
0.33 |
|
| 1980 |
Hess K, Holonyak N, Laidig WD, Vojak BA, Coleman JJ, Dapkus PD. Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures Solid State Communications. 34: 749-752. DOI: 10.1016/0038-1098(80)90906-0 |
0.338 |
|
| 1980 |
Vojak BA, Holonyak N, Laidig WD, Hess K, Coleman JJ, Kapkus PD. EXCITON IN RECOMBINATION IN Al//xGa//1// minus //xAs-GaAs QUANTUM-WELL HETEROSTRUCTURES. Solid State Communications. 35: 477-481. DOI: 10.1016/0038-1098(80)90252-5 |
0.318 |
|
| 1979 |
Hess K, Morkoç H, Shichijo H, Streetman BG. Negative differential resistance through real‐space electron transfer Applied Physics Letters. 35: 469-471. DOI: 10.1063/1.91172 |
0.312 |
|
| 1979 |
Hess K, Sah CT. The ultimate limits of CCD performance imposed by hot electron effects Solid State Electronics. 22: 1025-1033. DOI: 10.1016/0038-1101(79)90006-6 |
0.329 |
|
| 1978 |
Hess K, Sah T. Hot electrons in short-gate charge-coupled devices Ieee Transactions On Electron Devices. 25: 1399-1405. DOI: 10.1109/T-Ed.1978.19362 |
0.335 |
|
| 1976 |
Hess K, Dorda G, Sah CT. The current-voltage characteristics of field-effect transistors with short channels Solid State Communications. 19: 471-473. DOI: 10.1016/0038-1098(76)91193-5 |
0.311 |
|
| 1975 |
Hess K, Neugroschel A, Shiue CC, Sah CT. Non−Ohmic electron conduction in silicon surface inversion layers at low temperatures Journal of Applied Physics. 46: 1721-1727. DOI: 10.1063/1.321775 |
0.348 |
|
| 1975 |
Hess K, Sah CT. High frequency hot electron conductivity and admittance in Si and Ge Solid-State Electronics. 18: 667-669. DOI: 10.1016/0038-1101(75)90138-0 |
0.329 |
|
| 1974 |
Hess K, Sah CT. Hot carriers in silicon surface inversion layers Journal of Applied Physics. 45: 1254-1257. DOI: 10.1063/1.1663398 |
0.36 |
|
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