Stephen Goodnick - Publications

Affiliations: 
1986-1996 Oregon State University, Corvallis, OR 
 1996- Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Solid state electronics, transport, solar energy, nanotechnology
Website:
https://search.asu.edu/profile/38907

173 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Muralidharan P, Goodnick SM, Vasileska D. Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells Journal of Computational Electronics. 18: 1152-1161. DOI: 10.1007/S10825-019-01379-3  0.526
2015 Fang Y, Vasileska D, Honsberg C, Goodnick SM. High temperature InGaN solar cell modeling 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356348  0.499
2015 Maros A, Gangam S, Fang Y, Smith J, Vasileska D, Goodnick S, Bertoni MI, Honsberg CB. High temperature characterization of GaAs single junction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356338  0.481
2015 Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356048  0.499
2015 Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 1198-1200. DOI: 10.1002/Pssc.201510071  0.535
2014 Soligo R, Saraniti M, Goodnick SM. Terahertz devices and device modeling Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2049599  0.436
2014 Muralidharan P, Ghosh K, Vasileska D, Goodnick SM. Hot hole transport in a-Si/c-Si heterojunction solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2519-2523. DOI: 10.1109/PVSC.2014.6925443  0.534
2014 Hathwar R, Saraniti M, Goodnick SM. Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 645-649. DOI: 10.1109/NANO.2014.6968090  0.3
2014 Guerra D, Saraniti M, Ferry DK, Goodnick SM. X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848583  0.455
2013 Vasileska D, Klimeck G, Magana A, Goodnick S. Tool-Based Curricula and Visual Learning Electronics. 17: 95-104. DOI: 10.7251/Els1317095V  0.52
2013 Muralidharan P, Vasileska D, Goodnick SM. Advanced tunneling models for solar cell applications Conference Record of the Ieee Photovoltaic Specialists Conference. 2113-2117. DOI: 10.1109/PVSC.2013.6744891  0.534
2013 Guerra D, Saraniti M, Ferry DK, Goodnick SM. Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697725  0.476
2013 Padmanabhan B, Vasileska D, Goodnick SM. Current degradation due to electromechanical coupling in GaN HEMT's Microelectronics Journal. 44: 592-597. DOI: 10.1016/J.Mejo.2013.03.009  0.554
2013 Padmanabhan B, Vasileska D, Goodnick SM. Reliability concerns due to self-heating effects in GaN HEMTs Journal of Integrated Circuits and Systems. 8: 78-82.  0.527
2012 Vasileska D, Hossain A, Goodnick SM. The interplay of self-heating effects and static RTF in nanowire transistors 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243294  0.569
2012 Padmanabhan B, Vasileska D, Goodnick SM. GaN HEMTs reliability the role of shielding Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322177  0.595
2012 Guerra D, Ferry DK, Saraniti M, Goodnick SM. Millimeter-wave power amplifier circuit-device simulations through coupled Harmonic Balance-Monte Carlo particle-based device simulator Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6258430  0.307
2012 Soligo R, Guerra D, Ferry DK, Goodnick SM, Saraniti M. Cellular Monte Carlo study lateral scaling impact of on the DC-RF performance of high-power GaN HEMTs 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242863  0.306
2012 Raleva K, Vasileska D, Goodnick SM. Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242855  0.568
2012 Padmanabhan B, Vasileska D, Goodnick SM. Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242851  0.557
2012 Padmanabhan B, Vasileska D, Goodnick SM. Is self-heating responsible for the current collapse in GaN HEMTs? Journal of Computational Electronics. 11: 129-136. DOI: 10.1007/S10825-012-0385-Z  0.569
2012 Gada ML, Vasileska D, Raleva K, Goodnick SM. Electron drift velocity calculations in bulk silicon using an analytical model for acoustic and optical phonon dispersions Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2012. 712-715.  0.527
2011 Guerra D, Marino FA, Goodnick S, Ferry D, Saraniti M. Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations International Journal of High Speed Electronics and Systems. 20: 423-430. DOI: 10.1142/S0129156411006714  0.558
2011 Guerra D, Marino FA, Akis R, Ferry DK, Goodnick SM, Saraniti M. Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations 2011 Ieee 11th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2011 - Digest of Papers. 193-196. DOI: 10.1109/SIRF.2011.5719347  0.511
2011 Hossain A, Vasileska D, Goodnick SM. Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor Proceedings of the Ieee Conference On Nanotechnology. 1110-1113. DOI: 10.1109/NANO.2011.6144513  0.466
2011 Padmanabhan B, Vasileska D, Goodnick SM. Modeling reliability of GaN/AlGaN/AlN/GaN HEMT 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135165  0.541
2011 Raleva K, Vasileska D, Goodnick SM. Self-heating effects in high performance devices Communications in Computer and Information Science. 83: 114-122. DOI: 10.1007/978-3-642-19325-5_12  0.529
2011 Raleva K, Vasileska D, Goodnick SM. Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 6046: 103-109. DOI: 10.1007/978-3-642-18466-6_11  0.563
2011 Padmanabhan B, Vasileska D, Goodnick SM. Electromechanical coupling in AlGaN/AlN/GaN HEMT's Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 679-681.  0.518
2010 Goodnick S, Korkin A, Krstic P, Mascher P, Preston J, Zaslavsky A. Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications. Nanotechnology. 21: 130201. PMID 20234072 DOI: 10.1088/0957-4484/21/13/130201  0.352
2010 Marino FA, Saraniti M, Faralli N, Ferry DK, Goodnick SM, Guerra D. Emerging N-face GaN HEMT technology: A cellular Monte Carlo study Ieee Transactions On Electron Devices. 57: 2579-2586. DOI: 10.1109/Ted.2010.2058791  0.54
2010 Vasileska D, Raleva K, Goodnick SM. Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity Ieee Transactions On Electron Devices. 57: 726-728. DOI: 10.1109/Ted.2009.2039526  0.573
2010 Hossain A, Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in 10nm channel length nanowire transistors 2010 Silicon Nanoelectronics Workshop, Snw 2010. DOI: 10.1109/SNW.2010.5562566  0.545
2010 Guerra D, Akis R, Marino FA, Ferry DK, Goodnick SM, Saraniti M. Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs Ieee Electron Device Letters. 31: 1217-1219. DOI: 10.1109/Led.2010.2066954  0.481
2010 Vasileska D, Raleva K, Goodnick SM, Aksamija Z, Knezevic I. Thermal modeling of nanodevices 2010 14th International Workshop On Computational Electronics, Iwce 2010. 355-358. DOI: 10.1109/IWCE.2010.5677916  0.699
2010 Vasileska D, Hossain A, Raleva K, Goodnick SM. The role of the source and drain contacts on self-heating effect in nanowire transistors Ecs Transactions. 31: 83-90. DOI: 10.1007/S10825-010-0334-7  0.502
2010 Raleva K, Vasileska D, Goodnick SM. The role of the boundary conditions on the current degradation in FD-SOI devices Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 5910: 427-434. DOI: 10.1007/978-3-642-12535-5_50  0.579
2010 Marino FA, Guerra D, Goodnick S, Ferry D, Saraniti M. RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2445-2449. DOI: 10.1002/Pssc.200983887  0.617
2010 Akis R, Faralli N, Goodnick SM, Ferry DK, Saraniti M. Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2502-2505. DOI: 10.1002/Pssc.200983856  0.334
2010 Vasileska D, Klimeck G, Magana A, Goodnick S. Tool-based curricula and visual learning 9th European Conference On Elearning 2010, Ecel 2010. 643-656.  0.469
2010 Hossain A, Raleva K, Vasileska D, Goodnick SM. Self-heating effects in nanowire transistors Nanotechnology 2010: Electronics, Devices, Fabrication, Mems, Fluidics and Computational - Technical Proceedings of the 2010 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2010. 2: 45-48.  0.52
2009 Yamakawa S, Akis R, Faralli N, Saraniti M, Goodnick SM. Rigid ion model of high field transport in GaN. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174206. PMID 21825410 DOI: 10.1088/0953-8984/21/17/174206  0.561
2009 Huang L, Lai YC, Ferry DK, Akis R, Goodnick SM. Transmission and scarring in graphene quantum dots. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 344203. PMID 21715778 DOI: 10.1088/0953-8984/21/34/344203  0.435
2009 Huang L, Lai YC, Ferry DK, Goodnick SM, Akis R. Relativistic quantum scars. Physical Review Letters. 103: 054101. PMID 19792502 DOI: 10.1103/Physrevlett.103.054101  0.411
2009 Knezevic I, Ramayya EB, Vasileska D, Goodnick SM. Diffusive transport in quasi-2D and quasi-1D electron systems Journal of Computational and Theoretical Nanoscience. 6: 1725-1753. DOI: 10.1166/Jctn.2009.1240  0.709
2009 Vasileska D, Raleva K, Goodnick SM. Thermal effects in fully-depleted SOI devices Ecs Transactions. 23: 337-344. DOI: 10.1149/13183737  0.588
2009 Padmanabhan B, Vasileska D, Goodnick SM. Current degradation in GaN HEMTs: Is self-heating responsible? Ecs Transactions. 49: 103-109. DOI: 10.1149/04901.0103ecst  0.538
2009 Vasileska D, Raleva K, Goodnick SM. Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX Ieee Transactions On Electron Devices. 56: 3064-3071. DOI: 10.1109/Ted.2009.2032615  0.532
2009 Ashok A, Vasileska D, Goodnick SM, Hartin OL. Importance of the gate-dependent polarization charge on the operation of GaN HEMTs Ieee Transactions On Electron Devices. 56: 998-1006. DOI: 10.1109/Ted.2009.2015822  0.528
2009 Vasileska D, Raleva K, Goodnick SM. Electro-thermal modeling of nano-scale devices 15th International Workshop On Thermal Investigations of Ics and Systems, Therminic 2009. 195-196. DOI: 10.1109/MIEL.2010.5490455  0.561
2009 Vasileska D, Goodnick SM, Raleva K. Self-consistent simulation of heating effects in nanoscale devices Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091146  0.571
2009 Ashok A, Vasileska D, Goodnick SM, Hartin O. Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091087  0.527
2009 Padmanabhan B, Ashok A, Vasileska D, Goodnick SM. Modeling GaN HEMTs using thermal particle-based device simulator 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378113  0.549
2009 Marino FA, Faralli N, Ferry DK, Goodnick SM, Saraniti M. Figures of merit in high-frequency and high-power GaN HEMTs Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012040  0.452
2009 Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in nanoscale SOI devices Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012036  0.589
2009 Ashok A, Vasileska D, Goodnick SM, Hartin O. Importance of the gate-dependent polarization charge and the electron-electron interactions on the operation of GaN HEMTs Aip Conference Proceedings. 1199: 97-98. DOI: 10.1063/1.3295571  0.529
2009 Vasileska D, Raleva K, Goodnick SM. First self-consistent thermal device simulator Aip Conference Proceedings. 1199: 495-496. DOI: 10.1063/1.3295523  0.551
2009 Vasileska D, Raleva K, Goodnick SM. Inclusion of phonon dispersion and its influence on electrical characteristic degradation due to heating effects in nanoscale FD-SOI devices Aip Conference Proceedings. 1199: 493-494. DOI: 10.1063/1.3295522  0.517
2009 Ferry DK, Goodnick SM, Bird J. Transport in Nanostructures Transport in Nanostructures. 1-659. DOI: 10.1017/CBO9780511840463  0.514
2008 Akis R, Ayubi-Moak JS, Ferry DK, Goodnick SM, Faralli N, Saraniti M. Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 384201. PMID 21693809 DOI: 10.1088/0953-8984/20/38/384201  0.587
2008 Vasileska D, Mamaluy D, Khan HR, Raleva K, Goodnick SM. Semiconductor Device Modeling Journal of Computational and Theoretical Nanoscience. 5: 999-1030. DOI: 10.1166/Jctn.2008.2538  0.585
2008 Raleva K, Vasileska D, Goodnick SM, Nedjalkov M. Modeling thermal effects in nanodevices Ieee Transactions On Electron Devices. 55: 1306-1316. DOI: 10.1109/TED.2008.921263  0.588
2008 Goodnick SM, Vasileska D, Raleva K. Is dual gate device structure better from thermal perspective? International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 125-128. DOI: 10.1109/SISPAD.2008.4648253  0.56
2008 Goodnick SM, Raleva K, Vasileska D. Heating effects in dual-gate devices 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 10-13. DOI: 10.1109/NANO.2008.12  0.547
2008 Raleva K, Vasileska D, Goodnick SM. Is SOD technology the solution to heating problems in SOI devices? Ieee Electron Device Letters. 29: 621-624. DOI: 10.1109/Led.2008.920756  0.551
2008 Tierney BD, Day TE, Goodnick SM. Investigation of spin-polarized transport in GaAs nanostructures Journal of Physics: Conference Series. 109. DOI: 10.1088/1742-6596/109/1/012034  0.772
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering Journal of Applied Physics. 104. DOI: 10.1063/1.2977758  0.688
2008 Kothari H, Ramamoorthy A, Akis R, Goodnick SM, Ferry DK, Reno JL, Bird JP. Linear and nonlinear conductance of ballistic quantum wires with hybrid confinement Journal of Applied Physics. 103: 013701. DOI: 10.1063/1.2827466  0.368
2008 Vasileska D, Raleva K, Goodnick SM. Modeling heating effects in nanoscale devices: The present and the future Journal of Computational Electronics. 7: 66-93. DOI: 10.1007/S10825-008-0254-Y  0.613
2008 Vitobello F, Faralli N, Yamakawa S, Goodnick SM, Saraniti M. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT Journal of Computational Electronics. 7: 244-247. DOI: 10.1007/S10825-008-0215-5  0.606
2008 Ayubi-Moak JS, Akis R, Ferry DK, Goodnick S, Faralli N, Saraniti M. Towards the global modeling of InGaAs-based pseudomorphic HEMTs Journal of Computational Electronics. 7: 187-191. DOI: 10.1007/S10825-008-0207-5  0.444
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires Journal of Computational Electronics. 7: 319-323. DOI: 10.1007/s10825-008-0195-5  0.65
2008 Raleva K, Vasileska D, Goodnick SM, Dzekov T. Modeling thermal effects in nano-devices Journal of Computational Electronics. 7: 226-230. DOI: 10.1007/s10825-008-0189-3  0.563
2008 Ayubi-Moak JS, Akis R, Saraniti M, Ferry DK, Goodnick SM. Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs Physica Status Solidi (C). 5: 135-138. DOI: 10.1002/Pssc.200776577  0.467
2008 Goodnick SM, Raleva K, Vasileska D. Self-consistent thermal electron-phonon simulator for SOI devices Technical Proceedings of the 2008 Nsti Nanotechnology Conference and Trade Show, Nsti-Nanotech, Nanotechnology 2008. 3: 537-540.  0.589
2007 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electronic and thermal properties of silicon nanowires Ecs Transactions. 6: 159-164. DOI: 10.1149/1.2728855  0.66
2007 Goodnick SM, Saraniti M. Cellular Monte Carlo simulation of high field transport in semiconductor devices International Journal of High Speed Electronics and Systems. 17: 465-473. DOI: 10.1142/S0129156407004655  0.38
2007 Yamakawa S, Saraniti M, Goodnick SM. High field transport in GaN and AlGaN/GaN heterojunctions Proceedings of Spie - the International Society For Optical Engineering. 6471. DOI: 10.1117/12.705272  0.589
2007 Tierney BD, Goodnick SM. Monte Carlo simulation of spin-polarized transport in GaAs nanostructures 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 414-417. DOI: 10.1109/NANO.2007.4601222  0.771
2007 Ashok A, Vasileska D, Hartin O, Goodnick SM. Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 338-341. DOI: 10.1109/NANO.2007.4601203  0.564
2007 Raleva K, Vasileska D, Goodnick SM. The role of the temperature boundary conditions on the gate electrode on the heat distribution in 25 nm FD-SOI MOSFETs with SiO2 and gate-stack (high-k dielectric) as the gate oxide 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422323  0.459
2006 Vasileska D, Goodnick SM. Computational electronics Synthesis Lectures On Computational Electromagnetics. 6: 1-216. DOI: 10.2200/S00026ED1V01Y200605CEM006  0.56
2006 Ramayya E, Vasileska D, Goodnick SM, Knezevic I. Electron transport in Si nanowires Journal of Physics: Conference Series. 38: 126-129. DOI: 10.1088/1742-6596/38/1/031  0.671
2006 Shailos A, Ashok A, Bird JP, Akis R, Ferry DK, Goodnick SM, Lilly MP, Reno JL, Simmons JA. Linear conductance of quantum point contacts with deliberately broken symmetry Journal of Physics Condensed Matter. 18: 1715-1724. DOI: 10.1088/0953-8984/18/5/024  0.612
2006 Faralli N, Markandeya H, Branlard J, Saraniti M, Goodnick SM, Ferry DK. Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors Journal of Computational Electronics. 5: 483-486. DOI: 10.1007/S10825-006-0061-2  0.334
2006 Ayubi-Moak JS, Goodnick SM, Saraniti M. Global modeling of high frequency devices Journal of Computational Electronics. 5: 415-418. DOI: 10.1007/S10825-006-0028-3  0.378
2005 Hussein YA, El-Ghazaly SM, Goodnick SM. Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators Ieee Mtt-S International Microwave Symposium Digest. 2005: 325-328. DOI: 10.1109/MWSYM.2005.1516592  0.631
2005 Yamakawa S, Barker JM, Goodnick SM, Ferry DK, Saraniti M. Electron-phonon interaction of Wurtzite GaN and its effect on high field transport Aip Conference Proceedings. 772: 227-228. DOI: 10.1063/1.1994076  0.545
2005 Yamakawa S, Goodnick SM, Branlard J, Saraniti M. Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo Physica Status Solidi C: Conferences. 2: 2573-2576. DOI: 10.1002/Pssc.200461525  0.613
2005 Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ. High-field electron transport in AlGaN/GaN heterostructures Physica Status Solidi C: Conferences. 2: 2564-2568. DOI: 10.1002/Pssc.200461384  0.539
2004 Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ. High field transport in GaN/AlGaN heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2045-2050. DOI: 10.1116/1.1775199  0.53
2004 Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ. Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures Semiconductor Science and Technology. 19: S478-S480. DOI: 10.1088/0268-1242/19/4/157  0.484
2004 Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Influence of the electron-phonon interaction on electron transport in wurtzite GaN Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/156  0.557
2004 Aboud S, Saraniti M, Goodnick S, Brodschelm A, Leitenstorfer A. Full-band Monte Carlo simulations of photo excitation in silicon diode structures Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/101  0.431
2004 Yamakawa S, Goodnick S, Aboud S, Saraniti M. Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs Journal of Computational Electronics. 3: 299-303. DOI: 10.1007/s10825-004-7065-6  0.622
2004 Beysserie S, Aboud S, Goodnick S, Thornton T, Saraniti M. Full-band particle-based simulation of SOI and GOI MOSFETs Physica Status Solidi (B) Basic Research. 241: 2297-2302. DOI: 10.1002/Pssb.200404940  0.479
2004 Gerousis CP, Goodnick SM, Porod W. Nanoelectronic single-electron transistor circuits and architectures International Journal of Circuit Theory and Applications. 32: 323-338. DOI: 10.1002/Cta.284  0.774
2004 Branlard J, Aboud S, Osuch P, Goodnick S, Saraniti M. Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations Monte Carlo Methods and Applications. 10: 227-233.  0.324
2003 Goodnick SM, Bird J. Quantum-effect and single-electron devices Ieee Transactions On Nanotechnology. 2: 368-385. DOI: 10.1109/Tnano.2003.820773  0.305
2003 Hussein YA, El-Ghazaly SM, Goodnick SM. An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors Ieee Transactions On Microwave Theory and Techniques. 51: 2334-2346. DOI: 10.1109/TMTT.2003.820160  0.639
2003 Indlekofer KM, Bird JP, Akis R, Ferry DK, Goodnick SM. A model for many-body interaction effects in open quantum dot systems Journal of Physics Condensed Matter. 15: 147-158. DOI: 10.1088/0953-8984/15/2/314  0.526
2003 Branlard J, Aboud S, Goodnick S, Saraniti M. Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations Journal of Computational Electronics. 2: 213-217. DOI: 10.1023/B:Jcel.0000011427.63034.4E  0.367
2003 Ayubi-Moak JS, Goodnick S, Aboud SJ, Saraniti M, El-Ghazaly S. Coupling Maxwell's Equations to Full Band Particle-Based Simulators Journal of Computational Electronics. 2: 183-190. DOI: 10.1023/B:Jcel.0000011422.05617.F1  0.348
2003 Naser B, Cho K, Hwang S, Bird J, Ferry D, Goodnick S, Park B, Ahn D. Transport study of ultra-thin SOI MOSFETs Physica E: Low-Dimensional Systems and Nanostructures. 19: 39-43. DOI: 10.1016/S1386-9477(03)00326-6  0.365
2003 Indlekofer KM, Bird JP, Akis R, Ferry DK, Goodnick SM. A model for interaction corrections to transport through open quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 19: 206-209. DOI: 10.1016/S1386-9477(03)00309-6  0.53
2003 Krishnaswamy AE, Bird JP, Goodnick SM. Non-invasive study of transport in open quantum dot structures Physica E: Low-Dimensional Systems and Nanostructures. 19: 202-205. DOI: 10.1016/S1386-9477(03)00308-4  0.334
2003 Chakraborty PS, McCartney MR, Li J, Gopalan C, Singisetti U, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si Physica E: Low-Dimensional Systems and Nanostructures. 19: 167-172. DOI: 10.1016/S1386-9477(03)00302-3  0.388
2003 Saraniti M, Tang J, Goodnick SM, Wigger SJ. Numerical challenges in particle-based approaches for the simulation of semiconductor devices Mathematics and Computers in Simulation. 62: 501-508. DOI: 10.1016/S0378-4754(02)00229-X  0.805
2003 Singisetti U, McCartney MR, Li J, Chakraborty PS, Goodnick SM, Kozicki MN, Thornton TJ. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs Superlattices and Microstructures. 34: 301-310. DOI: 10.1016/J.Spmi.2004.03.020  0.338
2003 Hussein YA, El-Ghazaly SM, Goodnick SM. Electromagnetic-wave effects on closely packed microwave transistors using a fast time-domain simulation approach Ieee Mtt-S International Microwave Symposium Digest. 2: 989-992.  0.617
2003 Hussein YA, El-Ghazaly SM, Goodnick SM. A new wavelet-based technique for fast full-wave physical simulations of millimeter-wave transistors Ieee Mtt-S International Microwave Symposium Digest. 1: 17-20.  0.62
2002 Saraniti M, Hu Y, Goodnick SM. Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP Vlsi Design. 15: 743-750. DOI: 10.1080/1065514021000012354  0.315
2002 Indlekofer KM, Bird JP, Akis R, Ferry DK, Goodnick SM. Interaction corrections to transport due to quasibound states in open quantum dots Applied Physics Letters. 81: 3861-3863. DOI: 10.1063/1.1521584  0.344
2002 Wigger S, Saraniti M, Goodnick S, Leitenstorfer A. Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors Journal of Computational Electronics. 1: 475-480. DOI: 10.1023/A:1022945122145  0.452
2002 Saraniti M, Tang J, Goodnick S, Wigger S. Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors Journal of Computational Electronics. 1: 215-218. DOI: 10.1023/A:1020777508605  0.307
2002 Bird J, Ferry D, Goodnick S. Physica B: Condensed Matter - Preface Physica B: Condensed Matter. 314. DOI: 10.1016/S0921-4526(02)00911-0  0.398
2002 Barker JM, Akis R, Ferry DK, Goodnick SM, Thornton TJ, Koleske DD, Wickenden AE, Henry RL. High-field transport studies of GaN Physica B: Condensed Matter. 314: 39-41. DOI: 10.1016/S0921-4526(01)01453-3  0.334
2002 Reigrotzki M, Madureira J, Kuligk A, Fitzer N, Redmer R, Goodnick S, Dür M, Schattke W. Impact ionization and high-field effects in wide-band-gap semiconductors Physica B: Condensed Matter. 314: 52-54. DOI: 10.1016/S0921-4526(01)01381-3  0.358
2002 Saraniti M, Hu Y, Goodnick SM, Wigger SJ. Overshoot velocity in ultra-broadband THz studies in GaAs and InP Physica B: Condensed Matter. 314: 162-165. DOI: 10.1016/S0921-4526(01)01377-1  0.799
2002 Akis R, Dür M, Goodnick SM. The electron-phonon scattering rate of zinc blende GaN Physica B: Condensed Matter. 314: 42-46. DOI: 10.1016/S0921-4526(01)01365-5  0.333
2002 Barker JM, Ferry DK, Goodnick SM, Koleske DD, Wickenden AE, Henry RL. Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures Microelectronic Engineering. 63: 193-197. DOI: 10.1016/S0167-9317(02)00627-5  0.395
2002 Barker JM, Akis R, Thornton TJ, Ferry DK, Goodnick SM. High field transport studies of GaN Physica Status Solidi (a) Applied Research. 190: 263-270. DOI: 10.1002/1521-396X(200203)190:1<263::Aid-Pssa263>3.0.Co;2-U  0.392
2002 Gerousis CP, Goodnick SM. Simulation of single-electron tunneling circuits Physica Status Solidi (B) Basic Research. 233: 113-126. DOI: 10.1002/1521-3951(200209)233:1<113::Aid-Pssb113>3.0.Co;2-A  0.774
2002 Waliullah M, El-Ghazaly SM, Goodnick S. Large-signal circuit-based time domain analysis of high frequency devices including distributed effects Ieee Mtt-S International Microwave Symposium Digest. 3: 2145-2148.  0.786
2002 Wigger S, Saraniti M, Goodnick S, Leitenstorfer A. Fullband particle-based simulation of high-field transient transport in III-V semiconductors 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 564-567.  0.312
2001 Ferry D, Khoury M, Gerousis C, Rack M, Gunther A, Goodnick S. Single-electron charging effects in Si MOS devices Physica E: Low-Dimensional Systems and Nanostructures. 9: 69-75. DOI: 10.1016/S1386-9477(00)00179-X  0.787
2001 El-Ghazaly SM, Nair V, Goodnick S. Recent trends and enabling technologies in RF and microwave applications Asia-Pacific Microwave Conference Proceedings, Apmc. 3: 978-983.  0.595
2001 Wigger SJ, Goodnick SM, Saraniti M. Hybrid particle-based full-band analysis of ultra-small MOS Vlsi Design. 13: 125-129.  0.794
2001 Speyer G, Vasileska D, Goodnick SM. Efficient Poisson equation solvers for large scale 3D simulations 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 23-26.  0.55
2000 Shatalov A, Subramanian S, Dentai A, Chadrasekhar S, Goodnick S. Neutron irradiation induced degradation of the collector–emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors Journal of Applied Physics. 88: 3765-3767. DOI: 10.1063/1.1288778  0.335
2000 Dür M, Goodnick SM. Electron energy relaxation in silicon quantum dots by acoustic and optical phonon scattering Physica E: Low-Dimensional Systems and Nanostructures. 7: 233-236. DOI: 10.1016/S1386-9477(99)00316-1  0.301
2000 Khoury M, Gunther A, Miličić S, Rack J, Goodnick S, Vasileska D, Thornton T, Ferry D. Single-electron quantum dots in silicon MOS structures Applied Physics a: Materials Science & Processing. 71: 415-421. DOI: 10.1007/S003390000554  0.578
2000 Miličić S, Akis R, Vasileska D, Gunther A, Goodnick S. 3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects Superlattices and Microstructures. 28: 461-467. DOI: 10.1006/Spmi.2000.0949  0.552
2000 Wigger SJ, Goodnick SM, Saraniti M. Full-band CA/Monte Carlo modeling of ultrasmall FETs Superlattices and Microstructures. 27: 417-420. DOI: 10.1006/Spmi.2000.0860  0.783
2000 Miličić S, Badrieh F, Vasileska D, Gunther A, Goodnick S. 3D modeling of silicon quantum dots Superlattices and Microstructures. 27: 377-382. DOI: 10.1006/Spmi.2000.0845  0.586
2000 Gunther A, Khoury M, Miličić S, Vasileska D, Thornton T, Goodnick S. Transport in split-gate silicon quantum dots Superlattices and Microstructures. 27: 373-376. DOI: 10.1006/Spmi.2000.0844  0.581
2000 Saraniti M, Goodnick SM, Wigger SJ. Hybrid CA/Monte Carlo modeling of charge transport in semiconductors 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 457-460.  0.807
1999 Grondin RO, El-Ghazaly SM, Goodnick S. A review of global modeling of charge transport in semiconductors and full-wave electromagnetics Ieee Transactions On Microwave Theory and Techniques. 47: 817-829. DOI: 10.1109/22.769315  0.648
1999 Dür M, Gunther AD, Vasileska D, Goodnick SM. Acoustic phonon scattering in silicon quantum dots Nanotechnology. 10: 142-146. DOI: 10.1088/0957-4484/10/2/307  0.513
1999 Ferry DK, Goodnick SM, Hess K. Energy exchange in single-particle electron-electron scattering Physica B: Condensed Matter. 272: 538-541. DOI: 10.1016/S0921-4526(99)00335-X  0.521
1999 Bandyopadhyay A, Subramanian S, Chandrasekhar S, Dentai A, Goodnick S. Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation Microelectronics Reliability. 39: 333-339. DOI: 10.1016/S0026-2714(99)00004-9  0.333
1998 Ferry DK, Goodnick SM. Monte Carlo simulations in optical devices: Some successes and some problems Proceedings of Spie - the International Society For Optical Engineering. 3283: 366-374. DOI: 10.1117/12.316670  0.538
1998 Ferry DK, Goodnick SM. Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors Proceedings of Spie - the International Society For Optical Engineering. 3277: 10-17. DOI: 10.1117/12.306149  0.528
1998 Saraniti M, Zandler G, Formicone G, Wigger S, Goodnick S. Cellular automata simulation of nanometre-scale MOSFETs Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/050  0.401
1998 Dür M, Goodnick SM. Interface effects on intersubband carrier relaxation in GaAs/AlGaAs quantum wells Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/041  0.409
1998 Vasileska D, Wybourne MN, Goodnick SM, Gunther AD. 3D simulation of GaAs/AlGaAs quantum dot point contact structures Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/013  0.597
1998 Pennathur S, Sandalci CK, Koç CK, Goodnick SM. 3D parallel Monte Carlo simulation of GaAs MESFETs Vlsi Design. 6: 273-276.  0.313
1997 Smith JC, Wybourne MN, Berven C, Ramasubramaniam R, Goodnick SM. Temporal instabilities in the far-from-equilibrium transport of quantum point contacts Europhysics Letters (Epl). 39: 73-78. DOI: 10.1209/Epl/I1997-00316-7  0.319
1997 Sandalci CK, Koç ÇK, Goodnick S. Three-Dimensional Monte Carlo Device Simulation with Parallel Multigrid Solver International Journal of High Speed Computing. 9: 223-236. DOI: 10.1142/S0129053397000143  0.361
1997 Reigrotzki M, Dür M, Schattke W, Fitzer N, Redmer R, Goodnick S. High-Field Transport and Impact Ionization in Wide Bandgap Semiconductors Physica Status Solidi (B). 204: 528-530. DOI: 10.1002/1521-3951(199711)204:1<528::Aid-Pssb528>3.0.Co;2-J  0.311
1997 Dür M, Goodnick S, Lugli P. Monte Carlo Studies of Intersubband Relaxation in Wide GaAs/AlGaAs Quantum Wells Physica Status Solidi (B). 204: 170-173. DOI: 10.1002/1521-3951(199711)204:1<170::Aid-Pssb170>3.0.Co;2-A  0.338
1996 Smith JC, Berven C, Goodnick SM, Wybourne MN. Nonequilibrium random telegraph switching in quantum point contacts Physica B: Condensed Matter. 227: 197-201. DOI: 10.1016/0921-4526(96)00398-5  0.366
1996 Wybourne M, Smith JC, Berven C, Ramasubramaniam R, Goodnick S. Instabilities in quantum point contact structures Superlattices and Microstructures. 20: 419-425. DOI: 10.1006/Spmi.1996.0098  0.361
1995 Ang WM, Pennathur S, Pham L, Wager JF, Goodnick SM, Douglas AA. Evidence for band-to-band impact ionization in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 77: 2719-2724. DOI: 10.1063/1.358741  0.327
1995 Patel D, Menoni C, Schult D, McMahon T, Goodnick S. Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor Journal of Physics and Chemistry of Solids. 56: 669-672. DOI: 10.1016/0022-3697(94)00261-4  0.319
1993 Bhattacharyya K, Goodnick SM, Wager JF. Monte Carlo simulation of electron transport in alternating-current thin-film electroluminescent devices Journal of Applied Physics. 73: 3390-3395. DOI: 10.1063/1.352938  0.335
1993 Bhattacharyya K, Orwa JO, Goodnick SM. Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures Journal of Applied Physics. 73: 4396-4403. DOI: 10.1063/1.352777  0.347
1992 Rucker H, Lugli P, Goodnick SM, Lary JE. Intersubband relaxation of photoexcited carriers in asymmetric coupled quantum wells Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/024  0.368
1992 Wu JC, Wybourne MN, Berven C, Goodnick SM, Smith DD. Negative differential conductance observed in a lateral double constriction device Applied Physics Letters. 61: 2425-2427. DOI: 10.1063/1.108186  0.416
1991 Wu JC, Wybourne MN, Yindeepol W, Weisshaar A, Goodnick SM. Interference phenomena due to a double bend in a quantum wire Applied Physics Letters. 59: 102-104. DOI: 10.1063/1.105558  0.412
1991 Goodnick SM, Lary JE, Lugli P. Intersubband relaxation of hot carriers in quantum well systems Superlattices and Microstructures. 10: 461-466. DOI: 10.1016/0749-6036(91)90310-N  0.342
1989 Lugli P, Bordone P, Reggiani L, Rieger M, Kocevar P, Goodnick S. Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation Physical Review B. 39: 7852-7865. PMID 9947468 DOI: 10.1103/Physrevb.39.7852  0.389
1989 Weisshaar A, Lary J, Goodnick SM, Tripathi VK. Analysis of discontinuities in quantum waveguide structures Applied Physics Letters. 55: 2114-2116. DOI: 10.1063/1.102079  0.333
1989 Goodnick SM, Lugli P, Knox WH, Chemla DS. Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures Solid State Electronics. 32: 1737-1741. DOI: 10.1016/0038-1101(89)90304-3  0.311
1988 Goodnick SM, Lugli P. Monte Carlo Simulation of Sub-Picosecond Phenomena in Semiconductor Quantum Wells and Superlattices Proceedings of Spie - the International Society For Optical Engineering. 943: 92-101. DOI: 10.1117/12.947296  0.321
1988 Goodnick SM, Lugli P. Effect of electron-electron scattering on nonequilibrium transport in quantum-well systems Physical Review B. 37: 2578-2588. DOI: 10.1103/Physrevb.37.2578  0.395
1987 Lugli P, Goodnick SM. Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells Physical Review Letters. 59: 716-719. DOI: 10.1103/Physrevlett.59.716  0.375
1987 Goodnick SM, Lugli P. Subpicosecond dynamics of electron injection into GaAs/AlGaAs quantum wells Applied Physics Letters. 51: 584-586. DOI: 10.1063/1.98355  0.409
1986 Lugli P, Goodnick S, Koch F. Monte Carlo study of hot electrons in quantum wells Superlattices and Microstructures. 2: 335-338. DOI: 10.1016/0749-6036(86)90043-1  0.42
1983 Goodnick SM, Gann RG, Sites JR, Ferry DK, Wilmsen CW, Fathy D, Krivanek OL. SURFACE ROUGHNESS SCATTERING AT THE Si-SiO//2 INTERFACE Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 803-808. DOI: 10.1116/1.582696  0.336
1983 Goodnick SE, Porod W, Grondin RO, Goodnick SM, Wilmsen CW, Ferry DK. MONTE CARLO STUDY OF Si(111) SURFACE OXIDATION Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 767-772. DOI: 10.1116/1.582689  0.394
1983 Goodnick SM, Sites JR, Yi KS, Ferry DK, Wilmsen CW. Valley splitting on tilted Si(100) surfaces Physics Letters A. 97: 111-113. DOI: 10.1016/0375-9601(83)90526-1  0.385
1983 Goodnick SM, Ferry DK. Electron transport in inversion and accumulation layers of III-V compounds Thin Solid Films. 103: 27-46. DOI: 10.1016/0040-6090(83)90422-4  0.488
Show low-probability matches.