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Dragica Vasileska - Publications

Affiliations: 
Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering
Website:
https://search.asu.edu/profile/106590
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243 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Triet Ho LT, Mukherjee A, Vasileska D, Akis J, Stavro J, Zhao W, Goldan AH. Modeling Dark Current Conduction Mechanisms and Mitigation Techniques in Vertically Stacked Amorphous Selenium-Based Photodetectors. Acs Applied Electronic Materials. 3: 3538-3546. PMID 35600494 DOI: 10.1021/acsaelm.1c00444  0.323
2020 Yang C, Fu H, Kumar VN, Fu K, Liu H, Huang X, Yang T, Chen H, Zhou J, Deng X, Montes J, Ponce FA, Vasileska D, Zhao Y. GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD Ieee Transactions On Electron Devices. 67: 3972-3977. DOI: 10.1109/Ted.2020.3010183  0.347
2020 Cheng C, Vasileska D. Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions Ieee Transactions On Electron Devices. 67: 3705-3710. DOI: 10.1109/Ted.2020.3007368  0.452
2020 Muralidharan P, Leilaeioun MA, Weigand W, Holman ZC, Goodnick SM, Vasileska D. Understanding Transport in Hole Contacts of Silicon Heterojunction Solar Cells by Simulating TLM Structures Ieee Journal of Photovoltaics. 10: 363-371. DOI: 10.1109/Jphotov.2019.2957655  0.351
2020 Cheng C, Vasileska D. Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions Journal of Applied Physics. 127: 155702. DOI: 10.1063/1.5144214  0.461
2020 Rossetto ACJ, Camargo VVA, Both TH, Vasileska D, Wirth GI. Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations Journal of Computational Electronics. 19: 648-657. DOI: 10.1007/S10825-020-01478-6  0.431
2020 Camargo VVA, Rossetto ACJ, Vasileska D, Wirth GI. 3-D Monte Carlo device simulator for variability modeling of p-MOSFETs Journal of Computational Electronics. 19: 668-676. DOI: 10.1007/S10825-020-01461-1  0.468
2019 Mohamed M, Raleva K, Ravaioli U, Vasileska D, Aksamija Z. Phonon Dissipation in Nanostructured Semiconductor Devices: Dispersing Heat Is Critical for Continued Integrated Circuit Progress Ieee Nanotechnology Magazine. 13: 6-17. DOI: 10.1109/Mnano.2019.2916114  0.625
2019 Shaik AR, Brinkman D, Sankin I, Ringhofer C, Krasikov D, Kang H, Benes B, Vasileska D. PVRD-FASP: A Unified Solver for Modeling Carrier and Defect Transport in Photovoltaic Devices Ieee Journal of Photovoltaics. 9: 1602-1613. DOI: 10.1109/Jphotov.2019.2937238  0.33
2019 Kumar VN, Vasileska D. Phonon-limited mobility modeling of gallium nitride nanowires Journal of Applied Physics. 125: 114301. DOI: 10.1063/1.5072759  0.389
2019 Muralidharan P, Goodnick SM, Vasileska D. Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells Journal of Computational Electronics. 18: 1152-1161. DOI: 10.1007/S10825-019-01379-3  0.58
2018 Mukherjee A, Vasileska D, Goldan AH. Hole transport in selenium semiconductors using density functional theory and bulk Monte Carlo Journal of Applied Physics. 124: 235102. DOI: 10.1063/1.5055373  0.393
2017 Daugherty R, Vasileska D. Multi-Scale Modeling of Self Heating Effects on Power Consumption in Silicon CMOS Devices Additional Conferences (Device Packaging, Hitec, Hiten, and Cicmt). 2017: 1-22. DOI: 10.4071/2017DPC-TP3_Presentation4  0.417
2017 Muralidharan P, Goodnick SM, Vasileska D. Multiscale modeling of transport in silicon heterojunction solar cells Additional Conferences (Device Packaging, Hitec, Hiten, and Cicmt). 2017: 1-15. DOI: 10.4071/2017DPC-THA3_Presentation1  0.337
2017 Kannan G, Vasileska D. The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs Journal of Applied Physics. 122: 114303. DOI: 10.1063/1.5003253  0.406
2016 Vasileska D. Modeling self-heating in nanoscale devices Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 200-203. DOI: 10.1109/NANO.2015.7388957  0.367
2016 Qazi SS, Shaik AR, Daugherty RL, Laturia A, Vasileska D, Guo X, Bury E, Kaczer B, Raleva K. Multi-scale modeling of self-heating effects in silicon nanoscale devices Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 1461-1464. DOI: 10.1109/NANO.2015.7388916  0.366
2016 Vasileska D, Raleva K. Special issue: electrothermal and thermoelectric modeling of nanoscale devices Journal of Computational Electronics. 15: 1-2. DOI: 10.1007/S10825-016-0796-3  0.401
2015 Muralidharan P, Vasileska D, Goodnick SM. A Kinetic Monte Carlo Approach to Study Transport in Amorphous Silicon Additional Conferences (Device Packaging, Hitec, Hiten, and Cicmt). 2015: 000743-000758. DOI: 10.4071/2015DPC-tp33  0.311
2015 Fang Y, Vasileska D, Honsberg C, Goodnick SM. High temperature InGaN solar cell modeling 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356348  0.495
2015 Maros A, Gangam S, Fang Y, Smith J, Vasileska D, Goodnick S, Bertoni MI, Honsberg CB. High temperature characterization of GaAs single junction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356338  0.492
2015 Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356048  0.497
2015 Brinkman D, Guo D, Akis R, Ringhofer C, Sankin I, Fang T, Vasileska D. Self-consistent simulation of CdTe solar cells with active defects Journal of Applied Physics. 118. DOI: 10.1063/1.4927155  0.395
2015 Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 1198-1200. DOI: 10.1002/Pssc.201510071  0.59
2014 Muralidharan P, Ghosh K, Vasileska D, Goodnick SM. Hot hole transport in a-Si/c-Si heterojunction solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2519-2523. DOI: 10.1109/PVSC.2014.6925443  0.531
2014 Both TH, Wirth GI, Vasileska D. 1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator Journal of Computational Electronics. DOI: 10.1007/S10825-014-0655-Z  0.312
2014 Qazi S, Raleva K, Vasileska D. Electrical and thermal transport in alternative device technologies International Conference and Exhibition On Device Packaging 2014. 382-385.  0.373
2013 Nedjalkov M, Selberherr S, Ferry DK, Vasileska D, Dollfus P, Querlioz D, Dimov I, Schwaha P. Physical scales in the Wigner-Boltzmann equation. Annals of Physics. 328: 220-237. PMID 23504194 DOI: 10.1016/J.Aop.2012.10.001  0.308
2013 Vasileska D, Klimeck G, Magana A, Goodnick S. Tool-Based Curricula and Visual Learning Electronics. 17: 95-104. DOI: 10.7251/Els1317095V  0.505
2013 Vasileska D. Modeling thermal effects in nano-devices Microelectronic Engineering. 109: 163-167. DOI: 10.1109/Ted.2008.921263  0.458
2013 Muralidharan P, Vasileska D, Goodnick SM. Advanced tunneling models for solar cell applications Conference Record of the Ieee Photovoltaic Specialists Conference. 2113-2117. DOI: 10.1109/PVSC.2013.6744891  0.537
2013 Vasileska D. (Invited) Modeling reliability in GaN HEMTs Ieee International Integrated Reliability Workshop Final Report. 32-37. DOI: 10.1109/IIRW.2013.6804150  0.356
2013 Nedjalkov M, Schwaha P, Selberherr S, Sellier JM, Vasileska D. Wigner quasi-particle attributes—An asymptotic perspective Applied Physics Letters. 102: 163113. DOI: 10.1063/1.4802931  0.352
2013 Padmanabhan B, Vasileska D, Goodnick SM. Current degradation due to electromechanical coupling in GaN HEMT's Microelectronics Journal. 44: 592-597. DOI: 10.1016/J.Mejo.2013.03.009  0.719
2013 Raleva K, Vasileska D. The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices Journal of Computational Electronics. 12: 601-610. DOI: 10.1007/S10825-013-0520-5  0.427
2013 Padmanabhan B, Vasileska D, Goodnick SM. Reliability concerns due to self-heating effects in GaN HEMTs Journal of Integrated Circuits and Systems. 8: 78-82.  0.687
2012 Vasileska D, Hossain A, Goodnick SM. The interplay of self-heating effects and static RTF in nanowire transistors 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243294  0.599
2012 Padmanabhan B, Vasileska D, Goodnick SM. GaN HEMTs reliability the role of shielding Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322177  0.729
2012 Raleva K, Vasileska D, Goodnick SM. Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242855  0.592
2012 Padmanabhan B, Vasileska D, Goodnick SM. Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242851  0.699
2012 Wirth G, Vasileska D, Ashraf N, Brusamarello L, Della Giustina R, Srinivasan P. Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants Microelectronics Reliability. 52: 2955-2961. DOI: 10.1016/J.Microrel.2012.07.011  0.817
2012 Vasileska D, Raleva K, Hossain A, Goodnick SM. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors Journal of Computational Electronics. 11: 238-248. DOI: 10.1007/S10825-012-0404-0  0.707
2012 Padmanabhan B, Vasileska D, Goodnick SM. Is self-heating responsible for the current collapse in GaN HEMTs? Journal of Computational Electronics. 11: 129-136. DOI: 10.1007/S10825-012-0385-Z  0.732
2012 Raleva K, Vasileska D, Hossain A, Yoo SK, Goodnick SM. Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator Journal of Computational Electronics. 11: 106-117. DOI: 10.1007/S10825-012-0384-0  0.71
2012 Ashraf N, Joshi S, Vasileska D. Impact of channel length and gate width of a n-MOSFET device on the threshold voltage and its fluctuations in presence of random channel dopants and random interface trap: A 3D ensemble Monte Carlo study Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2012. 455-458.  0.371
2012 Gada ML, Vasileska D, Raleva K, Goodnick SM. Electron drift velocity calculations in bulk silicon using an analytical model for acoustic and optical phonon dispersions Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2012. 712-715.  0.513
2011 Ashraf N, Vasileska D. Static analysis of random telegraph noise in a 45-nm channel length conventional mosfet device: Threshold voltage and ON-current fluctuations Ieee Transactions On Nanotechnology. 10: 1394-1400. DOI: 10.1109/Tnano.2011.2148726  0.806
2011 Lim SH, Allen CR, Ding D, Liu X, Furdyna JK, Vasileska D, Zhang YH. Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000252-000255. DOI: 10.1109/PVSC.2011.6185893  0.327
2011 Hossain A, Vasileska D, Goodnick SM. Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor Proceedings of the Ieee Conference On Nanotechnology. 1110-1113. DOI: 10.1109/NANO.2011.6144513  0.508
2011 Ashraf N, Vasileska D, Wirth G, Purushothaman S. Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants Proceedings of the Ieee Conference On Nanotechnology. 492-495. DOI: 10.1109/NANO.2011.6144308  0.38
2011 Ashraf N, Vasileska D, Wirth G, Srinivasan P. Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants Ieee Electron Device Letters. 32: 1044-1046. DOI: 10.1109/Led.2011.2158287  0.814
2011 Padmanabhan B, Vasileska D, Goodnick SM. Modeling reliability of GaN/AlGaN/AlN/GaN HEMT 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135165  0.677
2011 Raleva K, Vasileska D, Goodnick SM. Self-heating effects in high performance devices Communications in Computer and Information Science. 83: 114-122. DOI: 10.1007/978-3-642-19325-5_12  0.563
2011 Vasileska D, Hossain A, Raleva K, Goodnick SM. Is self-heating important in nanowire FETs? Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 6046: 118-124. DOI: 10.1007/978-3-642-18466-6_13  0.3
2011 Raleva K, Vasileska D, Goodnick SM. Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 6046: 103-109. DOI: 10.1007/978-3-642-18466-6_11  0.587
2011 Ashraf N, Vasileska D. Comparative analysis of threshold voltage variations in presence of random channel dopants and a single random interface trap for 45 nm n-MOSFET as predicted by ensemble Monte Carlo simulation and existing analytical model expressions Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 145-148.  0.318
2011 Padmanabhan B, Vasileska D, Goodnick SM. Electromechanical coupling in AlGaN/AlN/GaN HEMT's Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 679-681.  0.668
2010 Vasileska D, Raleva K, Goodnick SM. Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity Ieee Transactions On Electron Devices. 57: 726-728. DOI: 10.1109/Ted.2009.2039526  0.637
2010 Ashok A, Vasileska D, Hartin OL, Goodnick SM. Electrothermal monte carlo simulation of GaN HEMTs including electronelectron interactions Ieee Transactions On Electron Devices. 57: 562-570. DOI: 10.1109/Ted.2009.2038585  0.527
2010 Hossain A, Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in 10nm channel length nanowire transistors 2010 Silicon Nanoelectronics Workshop, Snw 2010. DOI: 10.1109/SNW.2010.5562566  0.573
2010 Vasileska D. Self-heating in SOI nano devices 2010 Ieee Nanotechnology Materials and Devices Conference, Nmdc2010. 389-394. DOI: 10.1109/NMDC.2010.5649608  0.376
2010 Ashraf N, Vasileska D. 3D ensemble Monte Carlo device simulations of random trap induced degradation in drain current and in threshold voltage in the presence of random dopant distributions for 45 nm gate length MOSFETs 2010 14th International Workshop On Computational Electronics, Iwce 2010. 231-234. DOI: 10.1109/IWCE.2010.5677974  0.321
2010 Vasileska D, Raleva K, Goodnick SM, Aksamija Z, Knezevic I. Thermal modeling of nanodevices 2010 14th International Workshop On Computational Electronics, Iwce 2010. 355-358. DOI: 10.1109/IWCE.2010.5677916  0.718
2010 Vasileska D. Computational electronics and 21st century education Aip Conference Proceedings. 1239: 3-11. DOI: 10.1063/1.3459784  0.313
2010 Atanassov E, Gurov T, Karaivanova A, Nedjalkov M, Vasileska D, Raleva K. Electron–phonon interaction in nanowires: A Monte Carlo study of the effect of the field Mathematics and Computers in Simulation. 81: 515-521. DOI: 10.1016/J.Matcom.2009.09.006  0.41
2010 Camargo VVA, Ashraf N, Brusamarello L, Vasileska D, Wirth G. Impact of RDF and RTS on the performance of SRAM cells Journal of Computational Electronics. 9: 122-127. DOI: 10.1007/S10825-010-0340-9  0.792
2010 Vasileska D, Hossain A, Raleva K, Goodnick SM. The role of the source and drain contacts on self-heating effect in nanowire transistors Ecs Transactions. 31: 83-90. DOI: 10.1007/S10825-010-0334-7  0.724
2010 Vasileska D, Ashok A, Hartin O, Goodnick SM. Thermal modeling of GaN HEMTs Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 5910: 451-458. DOI: 10.1007/978-3-642-12535-5_53  0.357
2010 Raleva K, Vasileska D, Goodnick SM. The role of the boundary conditions on the current degradation in FD-SOI devices Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 5910: 427-434. DOI: 10.1007/978-3-642-12535-5_50  0.59
2010 Hossain A, Raleva K, Vasileska D, Goodnick SM. Self-heating effects in nanowire transistors Nanotechnology 2010: Electronics, Devices, Fabrication, Mems, Fluidics and Computational - Technical Proceedings of the 2010 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2010. 2: 45-48.  0.537
2010 Vasileska D, Klimeck G, Magana A, Goodnick S. Tool-based curricula and visual learning 9th European Conference On Elearning 2010, Ecel 2010. 643-656.  0.457
2009 Knezevic I, Ramayya EB, Vasileska D, Goodnick SM. Diffusive transport in quasi-2D and quasi-1D electron systems Journal of Computational and Theoretical Nanoscience. 6: 1725-1753. DOI: 10.1166/Jctn.2009.1240  0.704
2009 Vasileska D, Raleva K, Goodnick SM. Thermal effects in fully-depleted SOI devices Ecs Transactions. 23: 337-344. DOI: 10.1149/13183737  0.594
2009 Padmanabhan B, Vasileska D, Goodnick SM. Current degradation in GaN HEMTs: Is self-heating responsible? Ecs Transactions. 49: 103-109. DOI: 10.1149/04901.0103ecst  0.695
2009 Vasileska D, Raleva K, Goodnick SM. Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX Ieee Transactions On Electron Devices. 56: 3064-3071. DOI: 10.1109/Ted.2009.2032615  0.611
2009 Ashok A, Vasileska D, Goodnick SM, Hartin OL. Importance of the gate-dependent polarization charge on the operation of GaN HEMTs Ieee Transactions On Electron Devices. 56: 998-1006. DOI: 10.1109/Ted.2009.2015822  0.59
2009 Vasileska D, Raleva K, Goodnick SM. Electro-thermal modeling of nano-scale devices 15th International Workshop On Thermal Investigations of Ics and Systems, Therminic 2009. 195-196. DOI: 10.1109/MIEL.2010.5490455  0.569
2009 Vasileska D, Goodnick SM, Raleva K. Self-consistent simulation of heating effects in nanoscale devices Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091146  0.58
2009 Ashok A, Vasileska D, Goodnick SM, Hartin O. Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091087  0.54
2009 Padmanabhan B, Ashok A, Vasileska D, Goodnick SM. Modeling GaN HEMTs using thermal particle-based device simulator 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378113  0.692
2009 Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in nanoscale SOI devices Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012036  0.614
2009 Ashok A, Vasileska D, Goodnick SM, Hartin O. Importance of the gate-dependent polarization charge and the electron-electron interactions on the operation of GaN HEMTs Aip Conference Proceedings. 1199: 97-98. DOI: 10.1063/1.3295571  0.532
2009 Padmanabhan B, Ashok A, Vasileska D, Zhang YH. Drift diffusion modeling of solar cells Aip Conference Proceedings. 1199: 501-502. DOI: 10.1063/1.3295527  0.576
2009 Vasileska D, Raleva K, Goodnick SM. First self-consistent thermal device simulator Aip Conference Proceedings. 1199: 495-496. DOI: 10.1063/1.3295523  0.583
2009 Vasileska D, Raleva K, Goodnick SM. Inclusion of phonon dispersion and its influence on electrical characteristic degradation due to heating effects in nanoscale FD-SOI devices Aip Conference Proceedings. 1199: 493-494. DOI: 10.1063/1.3295522  0.534
2009 Ng G, Vasileska D, Schroder DK. Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiC Journal of Applied Physics. 106. DOI: 10.1063/1.3212532  0.345
2009 Ashraf N, Vasileska D. 1/f Noise: Threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps Journal of Computational Electronics. 8: 128-134. DOI: 10.1007/S10825-010-0330-Y  0.814
2009 Ahmed S, Ringhofer C, Vasileska D. An effective potential approach to modeling 25 nm MOSFET devices Journal of Computational Electronics. 8: 197-200. DOI: 10.1007/S10825-010-0326-7  0.466
2009 Vasileska D, Raleva K, Goodnick SM. Electro-thermal modeling of nano-scale devices 15th International Workshop On Thermal Investigations of Ics and Systems, Therminic 2009. 195-196.  0.332
2008 Vasileska D, Khan HR, Ahmed SS. Modeling Coulomb effects in nanoscale devices Journal of Computational and Theoretical Nanoscience. 5: 1793-1827. DOI: 10.1166/Jctn.2008.901  0.468
2008 Vasileska D, Mamaluy D, Khan HR, Raleva K, Goodnick SM. Semiconductor Device Modeling Journal of Computational and Theoretical Nanoscience. 5: 999-1030. DOI: 10.1166/Jctn.2008.2538  0.599
2008 Khan HR, Mamaluy D, Vasileska D. Simulation of the impact of process variation on the optimized 10-nm FinFET Ieee Transactions On Electron Devices. 55: 2134-2141. DOI: 10.1109/Ted.2008.925937  0.468
2008 Raleva K, Vasileska D, Goodnick SM, Nedjalkov M. Modeling thermal effects in nanodevices Ieee Transactions On Electron Devices. 55: 1306-1316. DOI: 10.1109/TED.2008.921263  0.609
2008 Khan HR, Mamaluy D, Vasileska D. Approaching optimal characteristics of 10-nm high-performance devices: A quantum transport simulation study of Si FinFET Ieee Transactions On Electron Devices. 55: 743-753. DOI: 10.1109/Ted.2007.915387  0.501
2008 Goodnick SM, Vasileska D, Raleva K. Is dual gate device structure better from thermal perspective? International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 125-128. DOI: 10.1109/SISPAD.2008.4648253  0.586
2008 Goodnick SM, Raleva K, Vasileska D. Heating effects in dual-gate devices 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 10-13. DOI: 10.1109/NANO.2008.12  0.572
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Thermoelectric properties of silicon nanowires 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 339-342. DOI: 10.1109/NANO.2008.106  0.556
2008 Raleva K, Vasileska D, Goodnick SM. Is SOD technology the solution to heating problems in SOI devices? Ieee Electron Device Letters. 29: 621-624. DOI: 10.1109/Led.2008.920756  0.62
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering Journal of Applied Physics. 104. DOI: 10.1063/1.2977758  0.693
2008 Vasileska D, Raleva K, Goodnick SM. Modeling heating effects in nanoscale devices: The present and the future Journal of Computational Electronics. 7: 66-93. DOI: 10.1007/S10825-008-0254-Y  0.622
2008 Khan H, Mamaluy D, Vasileska D. Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs Journal of Computational Electronics. 7: 346-349. DOI: 10.1007/S10825-008-0224-4  0.513
2008 Nedjalkov M, Vasileska D. Semi-discrete 2D Wigner-particle approach Journal of Computational Electronics. 7: 222-225. DOI: 10.1007/S10825-008-0197-3  0.358
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires Journal of Computational Electronics. 7: 319-323. DOI: 10.1007/s10825-008-0195-5  0.656
2008 Khan H, Mamaluy D, Vasileska D. Can silicon FinFETs satisfy ITRS projections for high performance 10 nm devices? Journal of Computational Electronics. 7: 284-287. DOI: 10.1007/S10825-008-0194-6  0.487
2008 Raleva K, Vasileska D, Goodnick SM, Dzekov T. Modeling thermal effects in nano-devices Journal of Computational Electronics. 7: 226-230. DOI: 10.1007/s10825-008-0189-3  0.585
2008 Nedjalkov M, Kosina H, Vasileska D. Wigner ensemble Monte Carlo: Challenges of 2D nano-device simulation Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 4818: 139-147. DOI: 10.1007/978-3-540-78827-0_14  0.334
2008 Goodnick SM, Raleva K, Vasileska D. Self-consistent thermal electron-phonon simulator for SOI devices Technical Proceedings of the 2008 Nsti Nanotechnology Conference and Trade Show, Nsti-Nanotech, Nanotechnology 2008. 3: 537-540.  0.609
2007 Nedjalkov M, Vasileska D, Dimov I, Arsov G. Mixed initial-boundary value problem in particle modeling of microelectronic devices Monte Carlo Methods and Applications. 13. DOI: 10.1515/Mcma.2007.017  0.352
2007 Khan H, Mamaluy D, Vasileska D. Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET Ecs Transactions. 6: 197-203. DOI: 10.1149/1.2728861  0.367
2007 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electronic and thermal properties of silicon nanowires Ecs Transactions. 6: 159-164. DOI: 10.1149/1.2728855  0.665
2007 Khan H, Mamaluy D, Vasileska D. Influence of interface roughness on quantum transport in nanoscale FinFET Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1437-1440. DOI: 10.1116/1.2748414  0.484
2007 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electron mobility in silicon nanowires Ieee Transactions On Nanotechnology. 6: 113-117. DOI: 10.1109/Tnano.2006.888521  0.63
2007 Khan HR, Mamaluy D, Vasileska D. Quantum transport simulation of experimentally fabricated nano-FinFET Ieee Transactions On Electron Devices. 54: 784-796. DOI: 10.1109/Ted.2007.892353  0.509
2007 Khan HR, Mamaluy D, Vasileska D. Modeling FinFETs using non-equilibrium green's function formalism: Influence of interface-roughness on device characteristics 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 695-699. DOI: 10.1109/NANO.2007.4601284  0.394
2007 Ashok A, Vasileska D, Hartin O, Goodnick SM. Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 338-341. DOI: 10.1109/NANO.2007.4601203  0.551
2007 Raleva K, Vasileska D, Goodnick SM. The role of the temperature boundary conditions on the gate electrode on the heat distribution in 25 nm FD-SOI MOSFETs with SiO2 and gate-stack (high-k dielectric) as the gate oxide 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422323  0.48
2007 Yu S, Wang J, Ding D, Johnson S, Vasileska D, Zhang Y. Impact of electronic density of states on electroluminescence refrigeration Solid-State Electronics. 51: 1387-1390. DOI: 10.1016/J.Sse.2007.06.015  0.377
2007 Nedjalkov M, Vasileska D, Atanassov E, Palankovski V. Ultrafast Wigner transport in quantum wires Journal of Computational Electronics. 6: 235-238. DOI: 10.1007/S10825-006-0101-Y  0.399
2007 Khan H, Mamaluy D, Vasileska D. Self-consistent treatment of quantum transport in 10 nm FinFET using Contact Block Reduction (CBR) method Journal of Computational Electronics. 6: 77-80. DOI: 10.1007/S10825-006-0074-X  0.494
2007 Heitzinger C, Ringhofer C, Ahmed S, Vasileska D. 3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions Journal of Computational Electronics. 6: 15-18. DOI: 10.1007/S10825-006-0058-X  0.46
2007 Khan H, Mamaluy D, Vasileska D. Quantum transport simulation of Si FinFET: Approaching optimal characteristics for 10 nm high performance devices 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 1: 181-184.  0.411
2007 Vasileska D, Krishnan S, Fischetti M. Examining performance enhancement of p-channel strained-SiGe MOSFET devices Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 4310: 189-196.  0.328
2006 Vasileska D, Goodnick SM. Computational electronics Synthesis Lectures On Computational Electromagnetics. 6: 1-216. DOI: 10.2200/S00026ED1V01Y200605CEM006  0.544
2006 Vasileska D, Krishnan S, Fischetti MV. Modeling of SiGe devices using a self-consistent full-band device simulator which properly takes into account quantum-mechanical size quantization and mobility enhancement Ecs Transactions. 3: 55-66. DOI: 10.1149/1.2355794  0.398
2006 Krishnan S, Fischetti M, Vasileska D. Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1997-2003. DOI: 10.1116/1.2216718  0.629
2006 Nedjalkov M, Vasileska D, Ferry DK, Jacoboni C, Ringhofer C, Dimov I, Palankovski V. Wigner transport models of the electron-phonon kinetics in quantum wires Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.035311  0.545
2006 Khan H, Mamaluy D, Vasileska D. Ballistic quantum-mechanical simulation of 10nm FinFET using CBR method Journal of Physics: Conference Series. 38: 196-199. DOI: 10.1088/1742-6596/38/1/047  0.368
2006 Ramayya E, Vasileska D, Goodnick SM, Knezevic I. Electron transport in Si nanowires Journal of Physics: Conference Series. 38: 126-129. DOI: 10.1088/1742-6596/38/1/031  0.67
2006 Krishnan S, Vasileska D, Fischetti MV. Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently Journal of Computational Electronics. 5: 435-438. DOI: 10.1007/S10825-006-0046-1  0.58
2006 Khan HR, Mamaluy D, Vasileska D. Self-consistent quantum mechanical treatment of the ballistic transport in 10 nm FinFET devices using CBR method 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 1: 54-57.  0.402
2006 Tank K, Vasileska D, Thornton TJ. Study of RF characteristic features of optimized SOI - MESFETs 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 1: 669-672.  0.352
2006 Ramayya EB, Knezevic I, Vasileska D, Goodnick SM. Electronic properties of silicon nanowires: Confined phonons and surface roughness 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 1: 20-22.  0.592
2005 Vasileska D, Khan HR, Ahmed SS, Ringhofer C, Heitzinger C. Quantum and coulomb effects in nanodevices International Journal of Nanoscience. 4: 305-361. DOI: 10.1142/S0219581X05003164  0.481
2005 Khan T, Vasileska D, Thornton TJ. Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1782-1784. DOI: 10.1116/1.1949220  0.491
2005 Ahmed SS, Ringhofer C, Vasileska D. Parameter-free effective potential method for use in particle-based device simulations Ieee Transactions On Nanotechnology. 4: 465-471. DOI: 10.1109/Tnano.2005.851239  0.469
2005 Khan T, Vasileska D, Thornton TJ. Subthreshold electron mobility in SOI MOSFETs and MESFETs Ieee Transactions On Electron Devices. 52: 1622-1626. DOI: 10.1109/Ted.2005.850617  0.484
2005 Vasileska D, Ahmed SS. Narrow-width SOI devices: The role of quantum-mechanical size quantization effect and unintentional doping the device operation Ieee Transactions On Electron Devices. 52: 227-236. DOI: 10.1109/Ted.2004.842715  0.486
2005 Krishnan S, Vasileska D, Fischetti MV. Simulation of hole transport in p-channel Si MOSFETs Device Research Conference - Conference Digest, Drc. 2005: 91-92. DOI: 10.1109/DRC.2005.1553070  0.32
2005 Mamaluy D, Vasileska D, Sabathil M, Zibold T, Vogl P. Contact block reduction method for ballistic transport and carrier densities of open nanostructures Physical Review B. 71. DOI: 10.1103/Physrevb.71.245321  0.431
2005 Ashok A, Akis R, Vasileska D, Ferry DK. Spin polarization in GaAs/Al0.24Ga0.76As heterostructures Molecular Simulation. 31: 797-800. DOI: 10.1080/08927020500283800  0.502
2005 Krishnan S, Vasileska D, Fischetti MV. Hole transport in p-channel Si MOSFETs Microelectronics Journal. 36: 323-326. DOI: 10.1016/J.Mejo.2005.02.111  0.597
2005 Ashok A, Akis R, Vasileska D, Ferry DK. Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures Microelectronics Journal. 36: 460-462. DOI: 10.1016/J.Mejo.2005.02.089  0.51
2005 Ahmed SS, Vasileska D, Heitzinger C, Ringhofer C. Quantum potential approach to modeling nanoscale MOSFETs Journal of Computational Electronics. 4: 57-61. DOI: 10.1007/s10825-005-7107-8  0.307
2005 Krishnan S, Vasileska D, Fischetti MV. Band-structure and quantum effects on hole transport in p-MOSFETs Journal of Computational Electronics. 4: 27-30. DOI: 10.1007/S10825-005-7101-1  0.597
2005 Ahmed SS, Ringhofer C, Vasileska D. Efficacy of the thermalized effective potential approach for modeling nano-devices International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2005: 251-254.  0.37
2005 Khan T, Vasileska D, Thornton TJ. Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 150-152.  0.347
2005 Khan H, Ahmed SS, Vasileska D. Examination of the effects of unintentional doping on the operation of FinFETs with monte carlo simulation integrated with Fast Multipole Method (FMM) 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 41-44.  0.382
2004 Vasileska D, Ahmed SS. Monte Carlo simulation of narrow-width SOI devices: Incorporation of the short range Coulomb interaction Monte Carlo Methods and Applications. 10: 629-640. DOI: 10.1515/Mcma.2004.10.3-4.629  0.5
2004 Khan T, Vasileska D, Thornton TJ. Treatment of interface roughness in SOI-MESFETs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2110-2112. DOI: 10.1116/1.1768194  0.47
2004 Goodnick SM, Saraniti M, Vasileska D, Aboud S. Particle-based methods in computational electronics Ieee Potentials. 23: 12-16. DOI: 10.1109/Mp.2004.1301239  0.427
2004 Ahmed SS, Vasileska D. Modeling of narrow-width SOI devices: The impact of quantum mechanical size quantization effects and unintentional doping on device operation Device Research Conference - Conference Digest, Drc. 117-118. DOI: 10.1109/DRC.2004.1367811  0.415
2004 Khan T, Vasileska D, Thornton TJ. Study of subthreshold electron mobility behavior in SOI - MESFETs Device Research Conference - Conference Digest, Drc. 61-62. DOI: 10.1109/DRC.2004.1367783  0.377
2004 Ahmed SS, Vasileska D. Modelling of narrow-width SOI devices Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/046  0.501
2004 Mamaluy D, Mannargudi A, Vasileska D, Sabathil M, Vogl P. Contact block reduction method and its application to a 10 nm MOSFET device Semiconductor Science and Technology. 19: S118-S121. DOI: 10.1088/0268-1242/19/4/042  0.466
2004 Mamaluy D, Mannargudi A, Vasileska D. Electron density calculation using the contact block reduction method Journal of Computational Electronics. 3: 45-50. DOI: 10.1023/B:Jcel.0000029455.15886.Cb  0.424
2004 Ashok A, Akis R, Vasileska D, Ferry DK. Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 255-256. DOI: 10.1007/s10825-005-7122-9  0.454
2004 Zorman B, Krishnan S, Vasileska D, Xu J, Van Schilfgaarde M. A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations Journal of Computational Electronics. 3: 351-354. DOI: 10.1007/S10825-004-7075-4  0.566
2004 Khan HR, Vasileska D, Ahmed SS, Ringhofer C, Heitzinger C. Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation Journal of Computational Electronics. 3: 337-340. DOI: 10.1007/S10825-004-7072-7  0.469
2004 Vasileska D, Ahmed SS. How quantum effects and unintentional doping affect the threshold voltage of narrow-width SOI devices 2004 4th Ieee Conference On Nanotechnology. 340-342.  0.42
2004 Ahmed SS, Ringhofer C, Vasileska D. Quantum potential approach to modeling nano-MOSFETs 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 213-214.  0.3
2003 Ringhofer C, Gardner C, Vasileska D. Effective potentials and quantum fluid models: A thermodynamic approach International Journal of High Speed Electronics and Systems. 13: 771-801. DOI: 10.1142/S0129156403002022  0.403
2003 Prasad C, Ferry DK, Vasileska D, Wieder HH. Electron heating measurements in an In0.52Al 0.48As/in0.53Ga0.47As/In0.52Al 0.48As heterostructure system Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1936-1939. DOI: 10.1116/1.1588644  0.744
2003 Vasileska D, Prasad C, Wieder HH, Ferry DK. Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Physica Status Solidi (B) Basic Research. 239: 103-109. DOI: 10.1116/1.1588643  0.771
2003 Vasileska D, Prasad C, Wieder HH, Ferry DK. Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Journal of Applied Physics. 93: 3359-3363. DOI: 10.1063/1.1555279  0.445
2003 Krishnan S, Vasileska D. Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs Journal of Computational Electronics. 2: 443-448. DOI: 10.1023/B:Jcel.0000011468.64475.94  0.58
2003 Ahmed SS, Vasileska D. Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects Physica E: Low-Dimensional Systems and Nanostructures. 19: 48-52. DOI: 10.1016/S1386-9477(03)00328-X  0.485
2003 Prasad C, Ferry DK, Vasileska D, Wieder HH. Electron-phonon interaction studies in an In0.52Al 0.48As/In0.53Ga0.47As/In0.52Al 0.48As quantum well structure Physica E: Low-Dimensional Systems and Nanostructures. 19: 215-220. DOI: 10.1016/S1386-9477(03)00319-9  0.725
2003 Mannargudi A, Vasileska D. Quantum confinements in highly asymmetric sub-micrometer device structures Superlattices and Microstructures. 34: 347-354. DOI: 10.1016/J.Spmi.2004.03.024  0.503
2003 Tarik K, Vasileska D, Thornton TJ. Quantum mechanical tunneling phenomena in metal-semiconductor junctions Superlattices and Microstructures. 34: 335-339. DOI: 10.1016/J.Spmi.2004.03.022  0.469
2003 Ringhofer C, Ahmed SS, Vasileska D. Effective potential approach to modeling of 25 nm MOSFET devices Superlattices and Microstructures. 34: 311-317. DOI: 10.1016/J.Spmi.2004.03.021  0.473
2003 Mannargudi A, Vasileska D. Monte Carlo and energy balance simulations of deep sub-micrometer conventional and asymmetric MOSFET device structures 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2: 1-4.  0.372
2002 Knezevic I, Vasileska DZ, Ferry DK. Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET Ieee Transactions On Electron Devices. 49: 1019-1026. DOI: 10.1109/Ted.2002.1003723  0.706
2002 Ahmed SS, Vasileska D. Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance Proceedings of the Ieee Conference On Nanotechnology. 2002: 243-246. DOI: 10.1109/NANO.2002.1032238  0.401
2002 Formicone G, Saraniti M, Vasileska D, Ferry D. Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer Ieee Transactions On Electron Devices. 49: 125-132. DOI: 10.1109/16.974759  0.536
2002 Akis R, Vasileska D, Ferry DK. Adiabatic switching in coupled quantum dot systems facilitated by the coexistence of "molecular" and "atomic" states Applied Physics Letters. 80: 4440-4442. DOI: 10.1063/1.1485102  0.549
2002 Gross WJ, Vasileska D, Ferry DK. Three-dimensional simulations of ultrasmall metal-oxide-semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics Journal of Applied Physics. 91: 3737-3740. DOI: 10.1063/1.1453510  0.594
2002 Vasileska D, Knezevic I, Akis R, Ahmed S, Ferry D. Journal of Computational Electronics. 1: 453-465. DOI: 10.1023/A:1022980703489  0.743
2002 Speyer G, Vasileska D, Goodnick S. Journal of Computational Electronics. 1: 359-363. DOI: 10.1023/A:1020747508122  0.676
2002 Knezevic I, Vasileska D, He X, Schroder D, Ferry D. Journal of Computational Electronics. 1: 273-277. DOI: 10.1023/A:1020702314057  0.724
2002 Knezevic I, Vasileska D, Akis R, Kang J, He X, Schroder DK. Monte Carlo particle-based simulation of FIBMOS: Impact of strong quantum confinement on device performance Physica B: Condensed Matter. 314: 386-390. DOI: 10.1016/S0921-4526(01)01427-2  0.651
2002 Vasileska D, Akis R, Knezevic I, Miličič SN, Ahmed SS, Ferry DK. Role of quantization effects in the operation of ultrasmall MOSFETs and SOI device structures Microelectronic Engineering. 63: 233-240. DOI: 10.1016/S0167-9317(02)00630-5  0.664
2002 Vasileska D. The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS devices Physica Status Solidi (B) Basic Research. 233: 127-133. DOI: 10.1002/1521-3951(200209)233:1<127::Aid-Pssb127>3.0.Co;2-R  0.481
2002 Vasileska D, Knezevic I, Akis R, Ferry DK. The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 556-559.  0.632
2002 Ahmed SS, Akis R, Vasileska D. Quantum effects in SOI devices 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 518-521.  0.4
2001 Gross WJ, Vasileska D, Ferry DK. Ultra-small MOSFETs: The importance of the full Coulomb interaction on device characteristics Vlsi Design. 13: 75-78. DOI: 10.1155/2001/78780  0.574
2001 Kang J, He X, Vasileska D, Schroder DK. Optimization of FIBMOS through 2D Silvaco ATLAS and 2D Monte Carlo particle-based device simulations Vlsi Design. 13: 251-256. DOI: 10.1155/2001/45747  0.461
2001 Akis R, Shifren L, Ferry DK, Vasileska D. The effective potential and its use in simulation Physica Status Solidi (B) Basic Research. 226: 1-8. DOI: 10.1002/1521-3951(200107)226:1<1::Aid-Pssb1>3.0.Co;2-T  0.625
2001 Speyer G, Vasileska D, Goodnick SM. Efficient Poisson equation solvers for large scale 3D simulations 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 23-26.  0.557
2000 Gross WJ, Vasileska D, Ferry DK. 3D simulations of ultra-small MOSFETs with real-space treatment of the electron-electron and electron-ion interactions Vlsi Design. 10: 437-452. DOI: 10.1155/2000/48474  0.561
2000 Gross WJ, Vasileska D, Ferry DK. Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics Ieee Transactions On Electron Devices. 47: 1831-1837. DOI: 10.1109/16.870556  0.36
2000 Assad F, Ren Z, Vasileska D, Datta S, Lundstrom M. On the performance limits for Si MOSFETs: a theoretical study Ieee Transactions On Electron Devices. 47: 232-240. DOI: 10.1109/16.817590  0.356
2000 Lin L, Aoki N, Nakao K, Ishibashi K, Aoyagi Y, Sugano T, Holmberg N, Vasileska D, Akis R, Bird J, Ferry D, Ochiai Y. Magneto-transport in corrugated quantum wires Physica E: Low-Dimensional Systems and Nanostructures. 7: 750-755. DOI: 10.1016/S1386-9477(00)00051-5  0.55
2000 Akis R, Bird JP, Ferry DK, Vasileska D. Nonuniform energy level broadening in open quantum dots: The influence of the closed dot eigenstates on transport Physica E: Low-Dimensional Systems and Nanostructures. 7: 745-749. DOI: 10.1016/S1386-9477(00)00050-3  0.528
2000 Akis R, Bird JP, Ferry DK, Vasileska D, Cooper J, Aoyagi Y, Sugano T. Selecting wave function states in open quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 7: 740-744. DOI: 10.1016/S1386-9477(00)00049-7  0.52
2000 Khoury M, Gunther A, Miličić S, Rack J, Goodnick S, Vasileska D, Thornton T, Ferry D. Single-electron quantum dots in silicon MOS structures Applied Physics a: Materials Science & Processing. 71: 415-421. DOI: 10.1007/S003390000554  0.588
2000 Miličić S, Akis R, Vasileska D, Gunther A, Goodnick S. 3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects Superlattices and Microstructures. 28: 461-467. DOI: 10.1006/Spmi.2000.0949  0.565
2000 Miličić S, Badrieh F, Vasileska D, Gunther A, Goodnick S. 3D modeling of silicon quantum dots Superlattices and Microstructures. 27: 377-382. DOI: 10.1006/Spmi.2000.0845  0.599
2000 Gunther A, Khoury M, Miličić S, Vasileska D, Thornton T, Goodnick S. Transport in split-gate silicon quantum dots Superlattices and Microstructures. 27: 373-376. DOI: 10.1006/Spmi.2000.0844  0.6
2000 Vasileska D, Gross WJ, Ferry DK. Monte Carlo particle-based simulations of deep-submicron n-MOSFETs with real-space treatment of electron-electron and electron-impurity interactions Superlattices and Microstructures. 27: 147-157. DOI: 10.1006/Spmi.1999.0806  0.632
2000 Harris J, Vasileska D. Monte-Carlo simulation of GaAs devices using high generality object-oriented code and encapsulated scattering tables 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 400-403.  0.312
2000 Ferry DK, Akis R, Vasileska D. Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices Technical Digest - International Electron Devices Meeting. 287-290.  0.37
2000 Gross WJ, Vasileska D, Ferry DK. 3D simulations of ultra-small MOSFETs: The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 469-472.  0.309
1999 Akis R, Vasileska D, Ferry DK, Bird JP. Zero Field Magnetoresistance Peaks in Open Quantum Dots: Weak Localization or a Fundamental Property? Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 328-331. DOI: 10.1143/Jjap.38.328  0.526
1999 Ochiai Y, Lin L, Ishibashi K, Aoyagi Y, Sugano T, Holmberg NL, Bird JP, Vasileska D, Akis R, Ferry DK. Modeling of Electron Transport in Corrugated Quantum Wires Japanese Journal of Applied Physics. 38: 325-327. DOI: 10.1143/Jjap.38.325  0.57
1999 Ferry DK, Akis R, Vasileska D, Holmberg N, Badrieh F, Bird JP. Theoretical Considerations of Electron Transport in Single and Multiple Quantum Dots Japanese Journal of Applied Physics. 38: 303-307. DOI: 10.1143/JJAP.38.303  0.472
1999 Ferry DK, Akis R, Vasileska D, Holmberg N, Badrieh F, Bird JP. Theoretical Considerations of Electron Transport in Single and Multiple Quantum Dots Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 303-307. DOI: 10.1143/Jjap.38.303  0.37
1999 Rack MJ, Hilt LL, Vasileska D, Ferry DK. Remote plasma enhanced chemical vapor deposition SiO[sub 2] in silicon based nanostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1840. DOI: 10.1116/1.590836  0.334
1999 Gross WJ, Vasileska D, Ferry DK. Novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations Ieee Electron Device Letters. 20: 463-465. DOI: 10.1109/55.784453  0.381
1999 Bird JP, Akis R, Ferry DK, Vasileska D, Cooper J, Aoyagi Y, Sugano T. Lead-Orientation-Dependent Wave Function Scarring in Open Quantum Dots Physical Review Letters. 82: 4691-4694. DOI: 10.1103/PHYSREVLETT.82.4691  0.415
1999 Bird JP, Akis R, Ferry DK, Vasileska D, Cooper J, Aoyagi Y, Sugano T. Lead-orientation-dependent wave function scarring in open quantum dots Physical Review Letters. 82: 4691-4694. DOI: 10.1103/Physrevlett.82.4691  0.375
1999 Akis R, Ferry DK, Bird JP, Vasileska D. Weak localization in ballistic quantum dots Physical Review B - Condensed Matter and Materials Physics. 60: 2680-2690. DOI: 10.1103/Physrevb.60.2680  0.527
1999 Vasileska D, Ferry DK. The influence of space quantization effects on the threshold voltage, inversion layer and total gate capacitances in scaled Si-MOSFETs Nanotechnology. 10: 192-197. DOI: 10.1088/0957-4484/10/2/314  0.42
1999 Vasileska D, Formicone G, Ferry DK. Doping dependence of the mobility enhancement in surface-channel strained-Si layers Nanotechnology. 10: 147-152. DOI: 10.1088/0957-4484/10/2/308  0.563
1999 Dür M, Gunther AD, Vasileska D, Goodnick SM. Acoustic phonon scattering in silicon quantum dots Nanotechnology. 10: 142-146. DOI: 10.1088/0957-4484/10/2/307  0.574
1999 Lin L, Ochiai Y, Ishibashi K, Aoyagi Y, Sugano T, Bird J, Holmberg N, Vasileska D, Akis R, Ferry D. Focused multi-peaks in gated ballistic wires Microelectronic Engineering. 47: 155-157. DOI: 10.1016/S0167-9317(99)00177-X  0.346
1999 Holmberg N, Vasileska D, Akis R, Ochiai Y, Ferry D. Backscattering of electrons in a periodically corrugated quantum wire modeled with a self-consistent potential Microelectronic Engineering. 47: 151-153. DOI: 10.1016/S0167-9317(99)00176-8  0.397
1999 Pivin DP, Akis R, Andresen A, Bird JP, Vasileska D, Ferry DK. Weakly open quantum dots: magnetotransport spectroscopy and zero-field resistance peaks Microelectronic Engineering. 47: 89-93. DOI: 10.1016/S0167-9317(99)00159-8  0.532
1999 Akis R, Vasileska D, Ferry DK, Bird JP. Zero Field Magnetoresistance Peaks in Open Quantum Dots: Weak Localization or a Fundamental Property? Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 328-331.  0.463
1998 Ferry DK, Formicone G, Vasileska D. Carrier Transport and Velocity Overshoot in Strained Si On Sige Heterostructures Mrs Proceedings. 533. DOI: 10.1557/Proc-533-31  0.557
1998 Formicone GF, Vasileska D, Ferry DK. 2D Monte Carlo simulation of hole and electron transport in strained Si Vlsi Design. 6: 167-171. DOI: 10.1155/1998/67849  0.529
1998 Vasileska D, Eldridge T, Bordone P, Ferry DK. Quantum transport simulation of the DOS function, self-consistent fields and mobility in MOS inversion layers Vlsi Design. 6: 21-25. DOI: 10.1155/1998/46360  0.558
1998 Vasileska D, Gross WJ, Kafedziski V, Ferry DK. Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs Vlsi Design. 8: 301-305. DOI: 10.1155/1998/21494  0.393
1998 Rack MJ, Gunther AD, Khoury M, Vasileska D, Ferry DK, Sidorov M. Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon-based nanostructures Semiconductor Science and Technology. 13: A71-A74. DOI: 10.1088/0268-1242/13/8A/022  0.343
1998 Vasileska D, Wybourne MN, Goodnick SM, Gunther AD. 3D simulation of GaAs/AlGaAs quantum dot point contact structures Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/013  0.601
1998 Ochiai Y, Lin L, Yamamoto K, Ishibashi K, Aoyagi Y, Sugano T, Bird JP, Vasileska D, Akis R, Ferry DK. Low-temperature magnetotransport in ballistic quantum dots and wires Semiconductor Science and Technology. 13: A15-A17. DOI: 10.1088/0268-1242/13/8A/006  0.521
1998 Ferry D, Akis R, Pivin Jr D, Bird J, Holmberg N, Badrieh F, Vasileska D. Quantum transport in ballistic quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 3: 137-144. DOI: 10.1016/S1386-9477(98)00228-8  0.534
1998 Akis R, Vasileska D, Ferry DK, Bird JP, Okubo Y, Ochiai Y, Ishibashi JPK, Aoyagi Y, Sugano T. Stability of regular orbits in ballistic quantum dots Physica B-Condensed Matter. 249: 368-372. DOI: 10.1016/S0921-4526(98)00133-1  0.376
1998 Ochiai Y, Okubo Y, Sasaki N, Bird JP, Ishibashi K, Aoyagi Y, Sugano T, Micolich AP, Taylor RP, Newbury R, Vasileska D, Akis R, Ferry DK. Wave Function Scarring And Magnetotransport In Quantum Dots Physica B-Condensed Matter. 249: 353-357. DOI: 10.1016/S0921-4526(98)00130-6  0.39
1998 Okubo Y, Sasaki N, Ochiai Y, Bird JP, Ishibashi K, Aoyagi Y, Sugano T, Vasileska D, Akis R, Ferry DK. Periodically recurring wavefunction scarring and magneto-transport in quantum dots Physica B-Condensed Matter. 246: 266-269. DOI: 10.1016/S0921-4526(97)00912-5  0.378
1998 Vasileska D, Gross WJ, Kafedziski V, Ferry DK. Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs Vlsi Design. 8: 301-305.  0.497
1997 Ferry DK, Akis R, Udipi S, Vasileska D, Pivin DP, Connolly KM, Bird JP, Ishibashi K, Aoyagi Y, Sugano T, Ochiai Y. Carrier Transport in Nanodevices Japanese Journal of Applied Physics. 36: 1841-1845. DOI: 10.1143/Jjap.36.1841  0.44
1997 Vasileska D, Schroder DK, Ferry DK. Scaled silicon MOSFET's: Degradation of the total gate capacitance Ieee Transactions On Electron Devices. 44: 584-587. DOI: 10.1109/16.563362  0.43
1997 Vasileska D, Ferry DK. Scaled silicon MOSFET's: Universal mobility behavior Ieee Transactions On Electron Devices. 44: 577-583. DOI: 10.1109/16.563361  0.387
1997 Okubo Y, Ochiai Y, Vasileska D, Akis R, Ferry D, Bird J, Ishibashi K, Aoyagi Y, Sugano T. Stability of regular orbits in ballistic quantum dots Physics Letters A. 236: 120-124. DOI: 10.1016/S0375-9601(97)00674-9  0.499
1997 Formicone G, Vasileska D, Ferry D. Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate Solid-State Electronics. 41: 879-885. DOI: 10.1016/S0038-1101(97)00042-7  0.373
1997 Formicone GF, Vasileska D, Ferry DK. Modeling of submicron Si1-xGex-based MOSFETs by self-consistent Monte Carlo simulation Physica Status Solidi (B) Basic Research. 204: 531-533. DOI: 10.1002/1521-3951(199711)204:1<531::Aid-Pssb531>3.0.Co;2-6  0.542
1997 Ferry DK, Akis R, Udipi S, Vasileska D, Pivin DP, Connolly KM, Bird JP, Ishibashi K, Aoyagi Y, Sugano T, Ochiai Y. Carrier transport in nanodevices Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36: 1841-1845.  0.406
1996 Vasileska D. Quantum transport: Silicon inversion layers and InAlAs–InGaAs heterostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14: 2780. DOI: 10.1116/1.588832  0.428
1996 Vasileska D, Bordone P, Eldridge T, Ferry DK. Quantum transport calculations for silicon inversion layers in MOS structures Physica B: Condensed Matter. 227: 333-335. DOI: 10.1016/0921-4526(96)00434-6  0.558
1996 Udipi S, Vasileska D, Ferry DK. Numerical modeling of silicon quantum dots Superlattices and Microstructures. 20: 342-347. DOI: 10.1006/Spmi.1996.0087  0.534
1995 Vasileska D. Calculation of the average interface field in inversion layers using zero-temperature Green’s function formalism Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13: 1841. DOI: 10.1116/1.587822  0.348
1993 Tsukioka K, Vasileska D, Ferry DK. An ensemble Monte Carlo study of high-field transport in β-SiC Physica B: Physics of Condensed Matter. 185: 466-470. DOI: 10.1016/0921-4526(93)90279-F  0.519
1993 Zhou JR, Vasileska D, Ferry DK. Modeling of β-SiC MESFETs using hydrodynamic equations Solid State Electronics. 36: 1289-1294. DOI: 10.1016/0038-1101(93)90167-O  0.584
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