Dragica Vasileska - Publications

Affiliations: 
Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering

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Year Citation  Score
2016 Guo D, Vasileska D. Modeling of light soaking effect in CdTe solar cells 16th International Conference On Numerical Simulation of Optoelectronic Devices, Nusod 2016. 181-182. DOI: 10.1109/NUSOD.2016.7547094  1
2016 Vasileska D. Modeling self-heating in nanoscale devices Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 200-203. DOI: 10.1109/NANO.2015.7388957  1
2016 Qazi SS, Shaik AR, Daugherty RL, Laturia A, Vasileska D, Guo X, Bury E, Kaczer B, Raleva K. Multi-scale modeling of self-heating effects in silicon nanoscale devices Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 1461-1464. DOI: 10.1109/NANO.2015.7388916  1
2016 Guo D, Fang T, Moore A, Brinkman D, Akis R, Krasikov D, Sankin I, Ringhofer C, Vasileska D. Numerical Simulation of Copper Migration in Single Crystal CdTe Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2571626  1
2016 Vasileska D, Raleva K. Special issue: electrothermal and thermoelectric modeling of nanoscale devices Journal of Computational Electronics. 15: 1-2. DOI: 10.1007/S10825-016-0796-3  1
2015 Bury E, Kaczer B, Mitard J, Collaert N, Khatami NS, Aksamija Z, Vasileska D, Raleva K, Witters L, Hellings G, Linten D, Groeseneken G, Thean A. Characterization of self-heating in high-mobility Ge FinFET pMOS devices Digest of Technical Papers - Symposium On Vlsi Technology. 2015: T60-T61. DOI: 10.1109/VLSIT.2015.7223703  1
2015 Fang Y, Vasileska D, Honsberg C, Goodnick SM. High temperature InGaN solar cell modeling 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356348  1
2015 Maros A, Gangam S, Fang Y, Smith J, Vasileska D, Goodnick S, Bertoni MI, Honsberg CB. High temperature characterization of GaAs single junction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356338  1
2015 Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356048  1
2015 Akis R, Brinkman D, Guo D, Vasileska D, Ringhofer C. Simulating Cl diffusion in polycrystalline CdTe 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355799  1
2015 Guo D, Brinkman D, Fang T, Akis R, Sankin I, Vasileska D, Ringhofer C. Diffusion-reaction modeling of Cu migration in CdTe solar devices 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301962  1
2015 Brinkman D, Guo D, Akis R, Ringhofer C, Sankin I, Fang T, Vasileska D. Self-consistent simulation of CdTe solar cells with active defects Journal of Applied Physics. 118. DOI: 10.1063/1.4927155  1
2015 Vasileska D, Ashraf N. Atomistic simulations on reliability Circuit Design For Reliability. 47-67. DOI: 10.1007/978-1-4614-4078-9_4  1
2015 Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 1198-1200. DOI: 10.1002/Pssc.201510071  1
2014 Akis R, Brinkman D, Sankin I, Fang T, Guo D, Vasileska D, Ringhofer C. Extracting Cu diffusion parameters in polycrystalline CdTe 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 3276-3281. DOI: 10.1109/PVSC.2014.6925635  1
2014 Muralidharan P, Ghosh K, Vasileska D, Goodnick SM. Hot hole transport in a-Si/c-Si heterojunction solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2519-2523. DOI: 10.1109/PVSC.2014.6925443  1
2014 Guo D, Akis R, Brinkman D, Sankin I, Fang T, Vasileska D, Ringhofer C. One-dimensional reaction-diffusion simulation of Cu migration in polycrystalline CdTe solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2011-2015. DOI: 10.1109/PVSC.2014.6925321  1
2014 Both TH, Wirth GI, Vasileska D. 1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator Journal of Computational Electronics. DOI: 10.1007/S10825-014-0655-Z  1
2014 Qazi S, Raleva K, Vasileska D. Electrical and thermal transport in alternative device technologies International Conference and Exhibition On Device Packaging 2014. 382-385.  1
2013 Nedjalkov M, Selberherr S, Ferry DK, Vasileska D, Dollfus P, Querlioz D, Dimov I, Schwaha P. Physical scales in the Wigner-Boltzmann equation. Annals of Physics. 328: 220-237. PMID 23504194 DOI: 10.1016/J.Aop.2012.10.001  1
2013 Vasileska D. Modeling thermal effects in nano-devices Microelectronic Engineering. 109: 163-167. DOI: 10.1109/Ted.2008.921263  1
2013 Muralidharan P, Vasileska D, Goodnick SM. Advanced tunneling models for solar cell applications Conference Record of the Ieee Photovoltaic Specialists Conference. 2113-2117. DOI: 10.1109/PVSC.2013.6744891  1
2013 Guo D, Vasileska D. 1D fast transient simulator for modeling CdS/CdTe solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1961-1965. DOI: 10.1109/PVSC.2013.6744855  1
2013 Vasileska D. (Invited) Modeling reliability in GaN HEMTs Ieee International Integrated Reliability Workshop Final Report. 32-37. DOI: 10.1109/IIRW.2013.6804150  1
2013 Padmanabhan B, Vasileska D, Goodnick SM. Current degradation due to electromechanical coupling in GaN HEMT's Microelectronics Journal. 44: 592-597. DOI: 10.1016/J.Mejo.2013.03.009  1
2013 Raleva K, Vasileska D. The importance of thermal conductivity modeling for simulations of self-heating effects in FD SOI devices Journal of Computational Electronics. 12: 601-610. DOI: 10.1007/S10825-013-0520-5  1
2013 Padmanabhan B, Vasileska D, Goodnick SM. Reliability concerns due to self-heating effects in GaN HEMTs Journal of Integrated Circuits and Systems. 8: 78-82.  1
2012 Vasileska D, Hossain A, Goodnick SM. The interplay of self-heating effects and static RTF in nanowire transistors 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243294  1
2012 Padmanabhan B, Vasileska D, Goodnick SM. GaN HEMTs reliability the role of shielding Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322177  1
2012 Raleva K, Vasileska D, Goodnick SM. Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242855  1
2012 Muralidharan P, Vasileska D, Wijewarnasuriya PS. Modeling of HgCdTe photodetectors in the LWIR region 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242853  1
2012 Padmanabhan B, Vasileska D, Goodnick SM. Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242851  1
2012 Nedjalkov M, Schwaha P, Selberherr S, Ferry DK, Vasileska D, Dollfus P, Querlioz D. Role of the physical scales on the transport regime 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242848  1
2012 Wirth G, Vasileska D, Ashraf N, Brusamarello L, Della Giustina R, Srinivasan P. Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants Microelectronics Reliability. 52: 2955-2961. DOI: 10.1016/J.Microrel.2012.07.011  1
2012 Padmanabhan B, Vasileska D, Goodnick SM. Is self-heating responsible for the current collapse in GaN HEMTs? Journal of Computational Electronics. 11: 129-136. DOI: 10.1007/S10825-012-0385-Z  1
2012 Raleva K, Vasileska D, Hossain A, Yoo SK, Goodnick SM. Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator Journal of Computational Electronics. 11: 106-117. DOI: 10.1007/S10825-012-0384-0  1
2012 Kannan G, Vasileska D. Importance of the collisional broadening of the states across MOSFET technology generations Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2012. 701-704.  1
2012 Ashraf N, Joshi S, Vasileska D. Impact of channel length and gate width of a n-MOSFET device on the threshold voltage and its fluctuations in presence of random channel dopants and random interface trap: A 3D ensemble Monte Carlo study Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2012. 455-458.  1
2012 Gada ML, Vasileska D, Raleva K, Goodnick SM. Electron drift velocity calculations in bulk silicon using an analytical model for acoustic and optical phonon dispersions Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2012. 712-715.  1
2011 Ashraf N, Vasileska D. Static analysis of random telegraph noise in a 45-nm channel length conventional mosfet device: Threshold voltage and ON-current fluctuations Ieee Transactions On Nanotechnology. 10: 1394-1400. DOI: 10.1109/Tnano.2011.2148726  1
2011 Lim SH, Allen CR, Ding D, Liu X, Furdyna JK, Vasileska D, Zhang YH. Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000252-000255. DOI: 10.1109/PVSC.2011.6185893  1
2011 Hossain A, Vasileska D, Goodnick SM. Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor Proceedings of the Ieee Conference On Nanotechnology. 1110-1113. DOI: 10.1109/NANO.2011.6144513  1
2011 Muralidharan P, Wijewarnasuriya PS, Vasileska D. OPTODET - Tool to model LWIR and MWIR region for HgCdTe photodetectors Proceedings of the Ieee Conference On Nanotechnology. 554-558. DOI: 10.1109/NANO.2011.6144311  1
2011 Ashraf N, Vasileska D, Wirth G, Purushothaman S. Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants Proceedings of the Ieee Conference On Nanotechnology. 492-495. DOI: 10.1109/NANO.2011.6144308  1
2011 Ashraf N, Vasileska D, Wirth G, Srinivasan P. Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants Ieee Electron Device Letters. 32: 1044-1046. DOI: 10.1109/Led.2011.2158287  1
2011 Padmanabhan B, Vasileska D, Goodnick SM. Modeling reliability of GaN/AlGaN/AlN/GaN HEMT 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135165  1
2011 Magana AJ, Vasileska D, Ahmed S. Work in progress - A transparency and scaffolding framework for computational simulation tools Proceedings - Frontiers in Education Conference, Fie. DOI: 10.1109/FIE.2011.6142803  1
2011 Ng G, Vasileska D, Schroder DK. Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine Superlattices and Microstructures. 49: 109-115. DOI: 10.1016/J.Spmi.2010.11.009  1
2011 Raleva K, Vasileska D, Goodnick SM. Self-heating effects in high performance devices Communications in Computer and Information Science. 83: 114-122. DOI: 10.1007/978-3-642-19325-5_12  1
2011 Vasileska D, Hossain A, Raleva K, Goodnick SM. Is self-heating important in nanowire FETs? Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 6046: 118-124. DOI: 10.1007/978-3-642-18466-6_13  1
2011 Raleva K, Vasileska D, Goodnick SM. Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 6046: 103-109. DOI: 10.1007/978-3-642-18466-6_11  1
2011 Ashraf N, Vasileska D. Comparative analysis of threshold voltage variations in presence of random channel dopants and a single random interface trap for 45 nm n-MOSFET as predicted by ensemble Monte Carlo simulation and existing analytical model expressions Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 145-148.  1
2011 Padmanabhan B, Vasileska D, Goodnick SM. Electromechanical coupling in AlGaN/AlN/GaN HEMT's Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 679-681.  1
2010 Vasileska D, Raleva K, Goodnick SM. Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity Ieee Transactions On Electron Devices. 57: 726-728. DOI: 10.1109/Ted.2009.2039526  1
2010 Ashok A, Vasileska D, Hartin OL, Goodnick SM. Electrothermal monte carlo simulation of GaN HEMTs including electronelectron interactions Ieee Transactions On Electron Devices. 57: 562-570. DOI: 10.1109/Ted.2009.2038585  1
2010 Hossain A, Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in 10nm channel length nanowire transistors 2010 Silicon Nanoelectronics Workshop, Snw 2010. DOI: 10.1109/SNW.2010.5562566  1
2010 Vasileska D. Self-heating in SOI nano devices 2010 Ieee Nanotechnology Materials and Devices Conference, Nmdc2010. 389-394. DOI: 10.1109/NMDC.2010.5649608  1
2010 Ashraf N, Vasileska D, Klimeck G. Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise 2010 10th Ieee Conference On Nanotechnology, Nano 2010. 782-785. DOI: 10.1109/NANO.2010.5697821  1
2010 Kannan G, Vasileska D. Schred V2.0: Tool to model MOS capacitors 2010 14th International Workshop On Computational Electronics, Iwce 2010. 211-214. DOI: 10.1109/IWCE.2010.5677977  1
2010 Ashraf N, Vasileska D. 3D ensemble Monte Carlo device simulations of random trap induced degradation in drain current and in threshold voltage in the presence of random dopant distributions for 45 nm gate length MOSFETs 2010 14th International Workshop On Computational Electronics, Iwce 2010. 231-234. DOI: 10.1109/IWCE.2010.5677974  1
2010 Vasileska D, Raleva K, Goodnick SM, Aksamija Z, Knezevic I. Thermal modeling of nanodevices 2010 14th International Workshop On Computational Electronics, Iwce 2010. 355-358. DOI: 10.1109/IWCE.2010.5677916  1
2010 Vasileska D. Computational electronics and 21st century education Aip Conference Proceedings. 1239: 3-11. DOI: 10.1063/1.3459784  1
2010 Camargo VVA, Ashraf N, Brusamarello L, Vasileska D, Wirth G. Impact of RDF and RTS on the performance of SRAM cells Journal of Computational Electronics. 9: 122-127. DOI: 10.1007/S10825-010-0340-9  1
2010 Vasileska D, Hossain A, Raleva K, Goodnick SM. The role of the source and drain contacts on self-heating effect in nanowire transistors Ecs Transactions. 31: 83-90. DOI: 10.1007/S10825-010-0334-7  1
2010 Vasileska D, Ashok A, Hartin O, Goodnick SM. Thermal modeling of GaN HEMTs Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 5910: 451-458. DOI: 10.1007/978-3-642-12535-5_53  1
2010 Raleva K, Vasileska D, Goodnick SM. The role of the boundary conditions on the current degradation in FD-SOI devices Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 5910: 427-434. DOI: 10.1007/978-3-642-12535-5_50  1
2010 Ashraf N, Vasileska D, Ma Z. Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions Nanotechnology 2010: Electronics, Devices, Fabrication, Mems, Fluidics and Computational - Technical Proceedings of the 2010 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2010. 2: 126-129.  1
2010 Hossain A, Raleva K, Vasileska D, Goodnick SM. Self-heating effects in nanowire transistors Nanotechnology 2010: Electronics, Devices, Fabrication, Mems, Fluidics and Computational - Technical Proceedings of the 2010 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2010. 2: 45-48.  1
2010 Vasileska D, Klimeck G, Magana A, Goodnick S. Tool-based curricula and visual learning 9th European Conference On Elearning 2010, Ecel 2010. 643-656.  1
2009 Knezevic I, Ramayya EB, Vasileska D, Goodnick SM. Diffusive transport in quasi-2D and quasi-1D electron systems Journal of Computational and Theoretical Nanoscience. 6: 1725-1753. DOI: 10.1166/Jctn.2009.1240  1
2009 Vasileska D, Raleva K, Goodnick SM. Thermal effects in fully-depleted SOI devices Ecs Transactions. 23: 337-344. DOI: 10.1149/13183737  1
2009 Padmanabhan B, Vasileska D, Goodnick SM. Current degradation in GaN HEMTs: Is self-heating responsible? Ecs Transactions. 49: 103-109. DOI: 10.1149/04901.0103ecst  1
2009 Vasileska D, Raleva K, Goodnick SM. Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX Ieee Transactions On Electron Devices. 56: 3064-3071. DOI: 10.1109/Ted.2009.2032615  1
2009 Ashok A, Vasileska D, Goodnick SM, Hartin OL. Importance of the gate-dependent polarization charge on the operation of GaN HEMTs Ieee Transactions On Electron Devices. 56: 998-1006. DOI: 10.1109/Ted.2009.2015822  1
2009 Vasileska D, Raleva K, Goodnick SM. Electro-thermal modeling of nano-scale devices 15th International Workshop On Thermal Investigations of Ics and Systems, Therminic 2009. 195-196. DOI: 10.1109/MIEL.2010.5490455  1
2009 Vasileska D, Goodnick SM, Raleva K. Self-consistent simulation of heating effects in nanoscale devices Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091146  1
2009 Ashok A, Vasileska D, Goodnick SM, Hartin O. Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091087  1
2009 Klimeck G, Vasileska D. ABACUS and AQME: Semiconductor device and quantum mechanics education on nanoHUB.org Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091083  1
2009 Padmanabhan B, Ashok A, Vasileska D, Goodnick SM. Modeling GaN HEMTs using thermal particle-based device simulator 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378113  1
2009 Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in nanoscale SOI devices Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012036  1
2009 Ashok A, Vasileska D, Goodnick SM, Hartin O. Importance of the gate-dependent polarization charge and the electron-electron interactions on the operation of GaN HEMTs Aip Conference Proceedings. 1199: 97-98. DOI: 10.1063/1.3295571  1
2009 Usman M, Vasileska D, Klimeck G. Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications Aip Conference Proceedings. 1199: 527-528. DOI: 10.1063/1.3295541  1
2009 Padmanabhan B, Ashok A, Vasileska D, Zhang YH. Drift diffusion modeling of solar cells Aip Conference Proceedings. 1199: 501-502. DOI: 10.1063/1.3295527  1
2009 Vasileska D, Raleva K, Goodnick SM. First self-consistent thermal device simulator Aip Conference Proceedings. 1199: 495-496. DOI: 10.1063/1.3295523  1
2009 Vasileska D, Raleva K, Goodnick SM. Inclusion of phonon dispersion and its influence on electrical characteristic degradation due to heating effects in nanoscale FD-SOI devices Aip Conference Proceedings. 1199: 493-494. DOI: 10.1063/1.3295522  1
2009 Ng G, Vasileska D, Schroder DK. Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiC Journal of Applied Physics. 106. DOI: 10.1063/1.3212532  1
2009 Ashraf N, Vasileska D. 1/f Noise: Threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps Journal of Computational Electronics. 8: 128-134. DOI: 10.1007/S10825-010-0330-Y  1
2009 Ahmed S, Ringhofer C, Vasileska D. An effective potential approach to modeling 25 nm MOSFET devices Journal of Computational Electronics. 8: 197-200. DOI: 10.1007/S10825-010-0326-7  1
2009 Haley BP, Klimeck G, Luisier M, Vasileska D, Paul A, Shivarajapura S, Beaudoin DL. Computational nanoelectronics research and education at nanoHUB.org Journal of Computational Electronics. 8: 124-131. DOI: 10.1007/S10825-009-0273-3  1
2009 Jacobi R, Vasileska D, Wirth G. Preface Ecs Transactions. 49: iii.  1
2009 Vasileska D, Raleva K, Goodnick SM. Electro-thermal modeling of nano-scale devices 15th International Workshop On Thermal Investigations of Ics and Systems, Therminic 2009. 195-196.  1
2008 Vasileska D, Khan HR, Ahmed SS. Modeling Coulomb effects in nanoscale devices Journal of Computational and Theoretical Nanoscience. 5: 1793-1827. DOI: 10.1166/Jctn.2008.901  1
2008 Khan HR, Mamaluy D, Vasileska D. Simulation of the impact of process variation on the optimized 10-nm FinFET Ieee Transactions On Electron Devices. 55: 2134-2141. DOI: 10.1109/Ted.2008.925937  1
2008 Raleva K, Vasileska D, Goodnick SM, Nedjalkov M. Modeling thermal effects in nanodevices Ieee Transactions On Electron Devices. 55: 1306-1316. DOI: 10.1109/TED.2008.921263  1
2008 Khan HR, Mamaluy D, Vasileska D. Approaching optimal characteristics of 10-nm high-performance devices: A quantum transport simulation study of Si FinFET Ieee Transactions On Electron Devices. 55: 743-753. DOI: 10.1109/Ted.2007.915387  1
2008 Goodnick SM, Vasileska D, Raleva K. Is dual gate device structure better from thermal perspective? International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 125-128. DOI: 10.1109/SISPAD.2008.4648253  1
2008 Goodnick SM, Raleva K, Vasileska D. Heating effects in dual-gate devices 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 10-13. DOI: 10.1109/NANO.2008.12  1
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Thermoelectric properties of silicon nanowires 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 339-342. DOI: 10.1109/NANO.2008.106  1
2008 Raleva K, Vasileska D, Goodnick SM. Is SOD technology the solution to heating problems in SOI devices? Ieee Electron Device Letters. 29: 621-624. DOI: 10.1109/Led.2008.920756  1
2008 Khan HR, Mamaluy D, Vasileska D. 3D NEGF quantum transport simulator for modeling ballistic transport in nano FinFETs Journal of Physics: Conference Series. 107. DOI: 10.1088/1742-6596/107/1/012007  1
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering Journal of Applied Physics. 104. DOI: 10.1063/1.2977758  1
2008 Vasileska D, Raleva K, Goodnick SM. Modeling heating effects in nanoscale devices: The present and the future Journal of Computational Electronics. 7: 66-93. DOI: 10.1007/S10825-008-0254-Y  1
2008 Khan H, Mamaluy D, Vasileska D. Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs Journal of Computational Electronics. 7: 346-349. DOI: 10.1007/S10825-008-0224-4  1
2008 Nedjalkov M, Vasileska D. Semi-discrete 2D Wigner-particle approach Journal of Computational Electronics. 7: 222-225. DOI: 10.1007/S10825-008-0197-3  1
2008 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires Journal of Computational Electronics. 7: 319-323. DOI: 10.1007/s10825-008-0195-5  1
2008 Khan H, Mamaluy D, Vasileska D. Can silicon FinFETs satisfy ITRS projections for high performance 10 nm devices? Journal of Computational Electronics. 7: 284-287. DOI: 10.1007/S10825-008-0194-6  1
2008 Raleva K, Vasileska D, Goodnick SM, Dzekov T. Modeling thermal effects in nano-devices Journal of Computational Electronics. 7: 226-230. DOI: 10.1007/s10825-008-0189-3  1
2008 Nedjalkov M, Kosina H, Vasileska D. Wigner ensemble Monte Carlo: Challenges of 2D nano-device simulation Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 4818: 139-147. DOI: 10.1007/978-3-540-78827-0_14  1
2008 Ashok A, Vasileska D, Hartin O, Goodnick SM. Monte Carlo simulation of GaN diode including intercarrier interactions Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 4818: 131-138. DOI: 10.1007/978-3-540-78827-0_13  1
2008 Goodnick SM, Raleva K, Vasileska D. Self-consistent thermal electron-phonon simulator for SOI devices Technical Proceedings of the 2008 Nsti Nanotechnology Conference and Trade Show, Nsti-Nanotech, Nanotechnology 2008. 3: 537-540.  1
2007 Khan H, Mamaluy D, Vasileska D. Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET Ecs Transactions. 6: 197-203. DOI: 10.1149/1.2728861  1
2007 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electronic and thermal properties of silicon nanowires Ecs Transactions. 6: 159-164. DOI: 10.1149/1.2728855  1
2007 Khan H, Mamaluy D, Vasileska D. Influence of interface roughness on quantum transport in nanoscale FinFET Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1437-1440. DOI: 10.1116/1.2748414  1
2007 Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electron mobility in silicon nanowires Ieee Transactions On Nanotechnology. 6: 113-117. DOI: 10.1109/Tnano.2006.888521  1
2007 Khan HR, Mamaluy D, Vasileska D. Quantum transport simulation of experimentally fabricated nano-FinFET Ieee Transactions On Electron Devices. 54: 784-796. DOI: 10.1109/Ted.2007.892353  1
2007 Krishnan S, Vasileska D. First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 365-368. DOI: 10.1109/SISPAD.2006.282910  1
2007 Khan HR, Mamaluy D, Vasileska D. Modeling FinFETs using non-equilibrium green's function formalism: Influence of interface-roughness on device characteristics 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 695-699. DOI: 10.1109/NANO.2007.4601284  1
2007 Ashok A, Vasileska D, Hartin O, Goodnick SM. Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 338-341. DOI: 10.1109/NANO.2007.4601203  1
2007 Raleva K, Vasileska D, Goodnick SM. The role of the temperature boundary conditions on the gate electrode on the heat distribution in 25 nm FD-SOI MOSFETs with SiO2 and gate-stack (high-k dielectric) as the gate oxide 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422323  1
2007 Nedjalkov M, Vasileska D, Atanassov E, Palankovski V. Ultrafast Wigner transport in quantum wires Journal of Computational Electronics. 6: 235-238. DOI: 10.1007/S10825-006-0101-Y  1
2007 Khan H, Mamaluy D, Vasileska D. Self-consistent treatment of quantum transport in 10 nm FinFET using Contact Block Reduction (CBR) method Journal of Computational Electronics. 6: 77-80. DOI: 10.1007/S10825-006-0074-X  1
2007 Heitzinger C, Ringhofer C, Ahmed S, Vasileska D. 3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions Journal of Computational Electronics. 6: 15-18. DOI: 10.1007/S10825-006-0058-X  1
2007 Khan H, Mamaluy D, Vasileska D. Quantum transport simulation of Si FinFET: Approaching optimal characteristics for 10 nm high performance devices 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 1: 181-184.  1
2007 Vasileska D, Krishnan S, Fischetti M. Examining performance enhancement of p-channel strained-SiGe MOSFET devices Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 4310: 189-196.  1
2006 Vasileska D, Goodnick SM. Computational electronics Synthesis Lectures On Computational Electromagnetics. 6: 1-216. DOI: 10.2200/S00026ED1V01Y200605CEM006  1
2006 Vasileska D, Krishnan S, Fischetti MV. Modeling of SiGe devices using a self-consistent full-band device simulator which properly takes into account quantum-mechanical size quantization and mobility enhancement Ecs Transactions. 3: 55-66. DOI: 10.1149/1.2355794  1
2006 Krishnan S, Fischetti M, Vasileska D. Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1997-2003. DOI: 10.1116/1.2216718  1
2006 Nedjalkov M, Vasileska D, Ferry DK, Jacoboni C, Ringhofer C, Dimov I, Palankovski V. Wigner transport models of the electron-phonon kinetics in quantum wires Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.035311  1
2006 Khan H, Mamaluy D, Vasileska D. Ballistic quantum-mechanical simulation of 10nm FinFET using CBR method Journal of Physics: Conference Series. 38: 196-199. DOI: 10.1088/1742-6596/38/1/047  1
2006 Ramayya E, Vasileska D, Goodnick SM, Knezevic I. Electron transport in Si nanowires Journal of Physics: Conference Series. 38: 126-129. DOI: 10.1088/1742-6596/38/1/031  1
2006 Krishnan S, Vasileska D, Fischetti MV. Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently Journal of Computational Electronics. 5: 435-438. DOI: 10.1007/S10825-006-0046-1  1
2006 Khan HR, Mamaluy D, Vasileska D. Self-consistent quantum mechanical treatment of the ballistic transport in 10 nm FinFET devices using CBR method 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 1: 54-57.  1
2006 Tank K, Vasileska D, Thornton TJ. Study of RF characteristic features of optimized SOI - MESFETs 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 1: 669-672.  1
2006 Ramayya EB, Knezevic I, Vasileska D, Goodnick SM. Electronic properties of silicon nanowires: Confined phonons and surface roughness 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 1: 20-22.  1
2005 Vasileska D, Khan HR, Ahmed SS, Ringhofer C, Heitzinger C. Quantum and coulomb effects in nanodevices International Journal of Nanoscience. 4: 305-361. DOI: 10.1142/S0219581X05003164  1
2005 Khan T, Vasileska D, Thornton TJ. Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1782-1784. DOI: 10.1116/1.1949220  1
2005 Ahmed SS, Ringhofer C, Vasileska D. Parameter-free effective potential method for use in particle-based device simulations Ieee Transactions On Nanotechnology. 4: 465-471. DOI: 10.1109/Tnano.2005.851239  1
2005 Khan T, Vasileska D, Thornton TJ. Subthreshold electron mobility in SOI MOSFETs and MESFETs Ieee Transactions On Electron Devices. 52: 1622-1626. DOI: 10.1109/Ted.2005.850617  1
2005 Vasileska D, Ahmed SS. Narrow-width SOI devices: The role of quantum-mechanical size quantization effect and unintentional doping the device operation Ieee Transactions On Electron Devices. 52: 227-236. DOI: 10.1109/Ted.2004.842715  1
2005 Krishnan S, Vasileska D, Fischetti MV. Simulation of hole transport in p-channel Si MOSFETs Device Research Conference - Conference Digest, Drc. 2005: 91-92. DOI: 10.1109/DRC.2005.1553070  1
2005 Ashok A, Akis R, Vasileska D, Ferry DK. Spin polarization in GaAs/Al0.24Ga0.76As heterostructures Molecular Simulation. 31: 797-800. DOI: 10.1080/08927020500283800  1
2005 Krishnan S, Vasileska D, Fischetti MV. Hole transport in p-channel Si MOSFETs Microelectronics Journal. 36: 323-326. DOI: 10.1016/J.Mejo.2005.02.111  1
2005 Ashok A, Akis R, Vasileska D, Ferry DK. Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures Microelectronics Journal. 36: 460-462. DOI: 10.1016/J.Mejo.2005.02.089  1
2005 Ahmed SS, Vasileska D, Heitzinger C, Ringhofer C. Quantum potential approach to modeling nanoscale MOSFETs Journal of Computational Electronics. 4: 57-61. DOI: 10.1007/s10825-005-7107-8  1
2005 Krishnan S, Vasileska D, Fischetti MV. Band-structure and quantum effects on hole transport in p-MOSFETs Journal of Computational Electronics. 4: 27-30. DOI: 10.1007/S10825-005-7101-1  1
2005 Ahmed SS, Ringhofer C, Vasileska D. Efficacy of the thermalized effective potential approach for modeling nano-devices International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2005: 251-254.  1
2005 Heitzinger C, Ringhofer C, Ahmed S, Vasileska D. Accurate three-dimensional simulation of electron mobility including electron-electron and electron-dopant interactions Proceedings - Electrochemical Society. 165-179.  1
2005 Ashok A, Akis R, Vasileska D, Ferry DK. Spin polarization in GaAs/Al0.24Ga<0.76As heterostructures 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 17-20.  1
2005 Khan T, Vasileska D, Thornton TJ. Study of cutoff frequency calculation in the subthreshold regime of operation of the SOI - MESFETs 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 150-152.  1
2005 Khan H, Ahmed SS, Vasileska D. Examination of the effects of unintentional doping on the operation of FinFETs with monte carlo simulation integrated with Fast Multipole Method (FMM) 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 41-44.  1
2005 Krishnan S, Vasileska D, Fischetti MV. Hole transport simulations in p-channel Si MOSFETs 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 72-75.  1
2004 Vasileska D, Ahmed SS. Monte Carlo simulation of narrow-width SOI devices: Incorporation of the short range Coulomb interaction Monte Carlo Methods and Applications. 10: 629-640. DOI: 10.1515/Mcma.2004.10.3-4.629  1
2004 Khan T, Vasileska D, Thornton TJ. Treatment of interface roughness in SOI-MESFETs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2110-2112. DOI: 10.1116/1.1768194  1
2004 Goodnick SM, Saraniti M, Vasileska D, Aboud S. Particle-based methods in computational electronics Ieee Potentials. 23: 12-16. DOI: 10.1109/Mp.2004.1301239  0.64
2004 Ahmed SS, Vasileska D. Modeling of narrow-width SOI devices: The impact of quantum mechanical size quantization effects and unintentional doping on device operation Device Research Conference - Conference Digest, Drc. 117-118. DOI: 10.1109/DRC.2004.1367811  1
2004 Khan T, Vasileska D, Thornton TJ. Study of subthreshold electron mobility behavior in SOI - MESFETs Device Research Conference - Conference Digest, Drc. 61-62. DOI: 10.1109/DRC.2004.1367783  1
2004 Ahmed SS, Vasileska D. Modelling of narrow-width SOI devices Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/046  1
2004 Mamaluy D, Mannargudi A, Vasileska D. Electron density calculation using the contact block reduction method Journal of Computational Electronics. 3: 45-50. DOI: 10.1023/B:Jcel.0000029455.15886.Cb  1
2004 Ashok A, Akis R, Vasileska D, Ferry DK. Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 255-256. DOI: 10.1007/s10825-005-7122-9  1
2004 Khan HR, Vasileska D, Ahmed SS, Ringhofer C, Heitzinger C. Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation Journal of Computational Electronics. 3: 337-340. DOI: 10.1007/S10825-004-7072-7  1
2004 Nedjalkov M, Ahmed S, Vasileska D. A self-consistent event biasing scheme for statistical enhancement 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 56-57. DOI: 10.1007/s10825-004-7066-5  1
2004 Khan T, Vasileska D, Thornton TJ. Subthreshold mobility extraction for SOI-MESFETs 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 157-158. DOI: 10.1007/s10825-004-7054-9  1
2004 Vasileska D, Ahmed SS. How quantum effects and unintentional doping affect the threshold voltage of narrow-width SOI devices 2004 4th Ieee Conference On Nanotechnology. 340-342.  1
2004 Krishnan S, Vasileska D. A self-consistent quantum mechanical simulation of P-channel strained SlGe MOSFETs 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 89-90.  1
2004 Khan HR, Vasileska D. 3D Monte Carlo simulation of FinFET using FMM algorithm 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 192-193.  1
2004 Ahmed SS, Ringhofer C, Vasileska D. Quantum potential approach to modeling nano-MOSFETs 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 213-214.  1
2004 Heitzinger C, Ringhofer C, Ahmed S, Vasileska D. Efficient simulation of the full Coulomb interaction in three dimensions 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 24-25.  1
2004 Khan T, Vasileska D, Thornton TJ. Sub-threshold electron mobility in SOI MESFET 2004 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2004. 2: 49-51.  1
2003 Ringhofer C, Gardner C, Vasileska D. Effective potentials and quantum fluid models: A thermodynamic approach International Journal of High Speed Electronics and Systems. 13: 771-801. DOI: 10.1142/S0129156403002022  1
2003 Prasad C, Ferry DK, Vasileska D, Wieder HH. Electron heating measurements in an In0.52Al 0.48As/in0.53Ga0.47As/In0.52Al 0.48As heterostructure system Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1936-1939. DOI: 10.1116/1.1588644  1
2003 Vasileska D, Prasad C, Wieder HH, Ferry DK. Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Physica Status Solidi (B) Basic Research. 239: 103-109. DOI: 10.1116/1.1588643  1
2003 Vasileska D, Prasad C, Wieder HH, Ferry DK. Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Journal of Applied Physics. 93: 3359-3363. DOI: 10.1063/1.1555279  1
2003 Ahmed SS, Vasileska D. Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects Physica E: Low-Dimensional Systems and Nanostructures. 19: 48-52. DOI: 10.1016/S1386-9477(03)00328-X  1
2003 Prasad C, Ferry DK, Vasileska D, Wieder HH. Electron-phonon interaction studies in an In0.52Al 0.48As/In0.53Ga0.47As/In0.52Al 0.48As quantum well structure Physica E: Low-Dimensional Systems and Nanostructures. 19: 215-220. DOI: 10.1016/S1386-9477(03)00319-9  1
2003 Mannargudi A, Vasileska D. Quantum confinements in highly asymmetric sub-micrometer device structures Superlattices and Microstructures. 34: 347-354. DOI: 10.1016/J.Spmi.2004.03.024  1
2003 Tarik K, Vasileska D, Thornton TJ. Quantum mechanical tunneling phenomena in metal-semiconductor junctions Superlattices and Microstructures. 34: 335-339. DOI: 10.1016/J.Spmi.2004.03.022  1
2003 Ringhofer C, Ahmed SS, Vasileska D. Effective potential approach to modeling of 25 nm MOSFET devices Superlattices and Microstructures. 34: 311-317. DOI: 10.1016/J.Spmi.2004.03.021  1
2003 Mannargudi A, Vasileska D. Monte Carlo and energy balance simulations of deep sub-micrometer conventional and asymmetric MOSFET device structures 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2: 1-4.  1
2002 Knezevic I, Vasileska DZ, Ferry DK. Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET Ieee Transactions On Electron Devices. 49: 1019-1026. DOI: 10.1109/Ted.2002.1003723  1
2002 Ahmed SS, Vasileska D. Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance Proceedings of the Ieee Conference On Nanotechnology. 2002: 243-246. DOI: 10.1109/NANO.2002.1032238  1
2002 Akis R, Vasileska D, Ferry DK. Adiabatic switching in coupled quantum dot systems facilitated by the coexistence of "molecular" and "atomic" states Applied Physics Letters. 80: 4440-4442. DOI: 10.1063/1.1485102  1
2002 Gross WJ, Vasileska D, Ferry DK. Three-dimensional simulations of ultrasmall metal-oxide-semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics Journal of Applied Physics. 91: 3737-3740. DOI: 10.1063/1.1453510  1
2002 Knezevic I, Vasileska D, Akis R, Kang J, He X, Schroder DK. Monte Carlo particle-based simulation of FIBMOS: Impact of strong quantum confinement on device performance Physica B: Condensed Matter. 314: 386-390. DOI: 10.1016/S0921-4526(01)01427-2  1
2002 Vasileska D, Akis R, Knezevic I, Miličič SN, Ahmed SS, Ferry DK. Role of quantization effects in the operation of ultrasmall MOSFETs and SOI device structures Microelectronic Engineering. 63: 233-240. DOI: 10.1016/S0167-9317(02)00630-5  1
2002 Vasileska D. The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS devices Physica Status Solidi (B) Basic Research. 233: 127-133. DOI: 10.1002/1521-3951(200209)233:1<127::Aid-Pssb127>3.0.Co;2-R  1
2002 Vasileska D, Knezevic I, Akis R, Ferry DK. The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS dvice 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 556-559.  1
2002 Ahmed SS, Akis R, Vasileska D. Quantum effects in SOI devices 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 518-521.  1
2001 Gross WJ, Vasileska D, Ferry DK. Ultra-small MOSFETs: The importance of the full Coulomb interaction on device characteristics Vlsi Design. 13: 75-78. DOI: 10.1155/2001/78780  1
2001 Kang J, He X, Vasileska D, Schroder DK. Optimization of FIBMOS through 2D Silvaco ATLAS and 2D Monte Carlo particle-based device simulations Vlsi Design. 13: 251-256. DOI: 10.1155/2001/45747  1
2001 Akis R, Shifren L, Ferry DK, Vasileska D. The effective potential and its use in simulation Physica Status Solidi (B) Basic Research. 226: 1-8. DOI: 10.1002/1521-3951(200107)226:1<1::Aid-Pssb1>3.0.Co;2-T  1
2001 Speyer G, Vasileska D, Goodnick SM. Efficient Poisson equation solvers for large scale 3D simulations 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 23-26.  1
2000 Gross WJ, Vasileska D, Ferry DK. 3D simulations of ultra-small MOSFETs with real-space treatment of the electron-electron and electron-ion interactions Vlsi Design. 10: 437-452. DOI: 10.1155/2000/48474  1
2000 Gross WJ, Vasileska D, Ferry DK. Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics Ieee Transactions On Electron Devices. 47: 1831-1837. DOI: 10.1109/16.870556  1
2000 Akis R, Bird JP, Ferry DK, Vasileska D. Nonuniform energy level broadening in open quantum dots: The influence of the closed dot eigenstates on transport Physica E: Low-Dimensional Systems and Nanostructures. 7: 745-749. DOI: 10.1016/S1386-9477(00)00050-3  1
2000 Akis R, Bird JP, Ferry DK, Vasileska D, Cooper J, Aoyagi Y, Sugano T. Selecting wave function states in open quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 7: 740-744. DOI: 10.1016/S1386-9477(00)00049-7  1
2000 Vasileska D, Gross WJ, Ferry DK. Monte Carlo particle-based simulations of deep-submicron n-MOSFETs with real-space treatment of electron-electron and electron-impurity interactions Superlattices and Microstructures. 27: 147-157. DOI: 10.1006/Spmi.1999.0806  1
2000 Mladenovic D, Vasileska D. Simulations for optimized piezoresistors 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 106-109.  1
2000 Harris J, Vasileska D. Monte-Carlo simulation of GaAs devices using high generality object-oriented code and encapsulated scattering tables 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 400-403.  1
2000 Akis R, Vasileska D. Modeling artificial molecules composed of coupled quantum dots 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 441-444.  1
2000 Ferry DK, Akis R, Vasileska D. Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices Technical Digest - International Electron Devices Meeting. 287-290.  1
2000 Gross WJ, Vasileska D, Ferry DK. 3D simulations of ultra-small MOSFETs: The role of the short range Coulomb interactions and discrete impurities on device terminal characteristics 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 469-472.  1
1999 Akis R, Vasileska D, Ferry DK, Bird JP. Zero Field Magnetoresistance Peaks in Open Quantum Dots: Weak Localization or a Fundamental Property? Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 328-331. DOI: 10.1143/Jjap.38.328  1
1999 Ferry DK, Akis R, Vasileska D, Holmberg N, Badrieh F, Bird JP. Theoretical Considerations of Electron Transport in Single and Multiple Quantum Dots Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 303-307. DOI: 10.1143/Jjap.38.303  1
1999 Gross WJ, Vasileska D, Ferry DK. Novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations Ieee Electron Device Letters. 20: 463-465. DOI: 10.1109/55.784453  1
1999 Bird JP, Akis R, Ferry DK, Vasileska D, Cooper J, Aoyagi Y, Sugano T. Lead-orientation-dependent wave function scarring in open quantum dots Physical Review Letters. 82: 4691-4694. DOI: 10.1103/Physrevlett.82.4691  1
1999 Akis R, Ferry DK, Bird JP, Vasileska D. Weak localization in ballistic quantum dots Physical Review B - Condensed Matter and Materials Physics. 60: 2680-2690. DOI: 10.1103/Physrevb.60.2680  1
1999 Vasileska D, Ferry DK. The influence of space quantization effects on the threshold voltage, inversion layer and total gate capacitances in scaled Si-MOSFETs Nanotechnology. 10: 192-197. DOI: 10.1088/0957-4484/10/2/314  1
1999 Vasileska D, Formicone G, Ferry DK. Doping dependence of the mobility enhancement in surface-channel strained-Si layers Nanotechnology. 10: 147-152. DOI: 10.1088/0957-4484/10/2/308  1
1999 Dür M, Gunther AD, Vasileska D, Goodnick SM. Acoustic phonon scattering in silicon quantum dots Nanotechnology. 10: 142-146. DOI: 10.1088/0957-4484/10/2/307  1
1999 Pivin DP, Akis R, Andresen A, Bird JP, Vasileska D, Ferry DK. Weakly open quantum dots: magnetotransport spectroscopy and zero-field resistance peaks Microelectronic Engineering. 47: 89-93. DOI: 10.1016/S0167-9317(99)00159-8  1
1999 Akis R, Vasileska D, Ferry DK, Bird JP. Zero Field Magnetoresistance Peaks in Open Quantum Dots: Weak Localization or a Fundamental Property? Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 328-331.  1
1998 Formicone GF, Vasileska D, Ferry DK. 2D Monte Carlo simulation of hole and electron transport in strained Si Vlsi Design. 6: 167-171. DOI: 10.1155/1998/67849  1
1998 Vasileska D, Eldridge T, Bordone P, Ferry DK. Quantum transport simulation of the DOS function, self-consistent fields and mobility in MOS inversion layers Vlsi Design. 6: 21-25. DOI: 10.1155/1998/46360  1
1998 Rack MJ, Vasileska D, Ferry DK, Sidorov M. Surface roughness of SiO2 from a remote microwave plasma enhanced chemical vapor deposition process Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2165-2170. DOI: 10.1116/1.590144  1
1998 Vasileska D, Wybourne MN, Goodnick SM, Gunther AD. 3D simulation of GaAs/AlGaAs quantum dot point contact structures Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/013  1
1998 Vasileska D, Gross WJ, Kafedziski V, Ferry DK. Convergence properties of the Bi-CGSTAB method for the solution of the 3D poisson and 3D electron current continuity equations for scaled Si MOSFETs Vlsi Design. 8: 301-305.  1
1997 Vasileska D, Schroder DK, Ferry DK. Scaled silicon MOSFET's: Degradation of the total gate capacitance Ieee Transactions On Electron Devices. 44: 584-587. DOI: 10.1109/16.563362  1
1997 Vasileska D, Ferry DK. Scaled silicon MOSFET's: Universal mobility behavior Ieee Transactions On Electron Devices. 44: 577-583. DOI: 10.1109/16.563361  1
1997 Formicone GF, Vasileska D, Ferry DK. Modeling of submicron Si1-xGex-based MOSFETs by self-consistent Monte Carlo simulation Physica Status Solidi (B) Basic Research. 204: 531-533. DOI: 10.1002/1521-3951(199711)204:1<531::Aid-Pssb531>3.0.Co;2-6  1
1997 Formicone GF, Vasileska D, Ferry DK. Transport in the surface channel of strained Si on a relaxed Si1 - xGex substrate Solid-State Electronics. 41: 879-885.  1
1997 Ferry DK, Akis R, Udipi S, Vasileska D, Pivin DP, Connolly KM, Bird JP, Ishibashi K, Aoyagi Y, Sugano T, Ochiai Y. Carrier transport in nanodevices Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36: 1841-1845.  1
1996 Bordone P, Vasileska D, Ferry DK. Collision-duration time for optical-phonon emission in semiconductors. Physical Review. B, Condensed Matter. 53: 3846-3855. PMID 9983937 DOI: 10.1103/Physrevb.53.3846  1
1996 Vasileska D, Bordone P, Eldridge T, Ferry DK. Quantum transport calculations for silicon inversion layers in MOS structures Physica B: Condensed Matter. 227: 333-335. DOI: 10.1016/0921-4526(96)00434-6  1
1996 Udipi S, Vasileska D, Ferry DK. Numerical modeling of silicon quantum dots Superlattices and Microstructures. 20: 342-347. DOI: 10.1006/Spmi.1996.0087  1
1993 Tsukioka K, Vasileska D, Ferry DK. An ensemble Monte Carlo study of high-field transport in β-SiC Physica B: Physics of Condensed Matter. 185: 466-470. DOI: 10.1016/0921-4526(93)90279-F  1
1993 Zhou JR, Vasileska D, Ferry DK. Modeling of β-SiC MESFETs using hydrodynamic equations Solid State Electronics. 36: 1289-1294. DOI: 10.1016/0038-1101(93)90167-O  1
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