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Purushothaman Srinivasan, Ph.D. - Publications

Affiliations: 
2007 New Jersey Institute of Technology, Newark, NJ, United States 
Area:
Electronics and Electrical Engineering
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26 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Otero-Carrascal A, Chaparro-Ortiz D, Srinivasan P, Huerta O, Gutiérrez-Domínguez E, Torres-Torres R. RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling. Micromachines. 15. PMID 38398980 DOI: 10.3390/mi15020252  0.308
2020 Siddiqui S, Galatage R, Zhao W, Muthinti GR, Fronheiser J, Srinivasan P, Triyoso DH, Sporer R, Jagannathan H, Haran B, Knorr A. High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack Microelectronic Engineering. 223: 111219. DOI: 10.1016/J.Mee.2020.111219  0.34
2017 Ding YM, Misra DD, Srinivasan P. Flicker Noise Performance on Thick and Thin Oxide FinFETs Ieee Transactions On Electron Devices. 64: 2321-2325. DOI: 10.1109/Ted.2017.2676979  0.515
2017 Samnakay R, Balandin AA, Srinivasan P. Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability Solid-State Electronics. 135: 37-42. DOI: 10.1016/J.Sse.2017.06.003  0.479
2017 Yamaguchi S, Bayindir Z, He X, Uppal S, Srinivasan P, Yong C, Choi D, Joshi M, Yang HS, Hu O, Samavedam S, Sohn DK. Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices Microelectronics Reliability. 72: 80-84. DOI: 10.1016/J.Microrel.2017.04.004  0.35
2014 Kerber A, Srinivasan P. Impact of stress mode on stochastic BTI in scaled MG/HK CMOS devices Ieee Electron Device Letters. 35: 431-433. DOI: 10.1109/Led.2014.2304532  0.383
2014 Chandra N, Chandrashekhar S, Francis R, Kerber A, Srinivasan P, Nigam T. High speed Bias Temperature Instability measurements on 20 nm RMG HKMG MOSFETs Solid-State Electronics. 101: 18-22. DOI: 10.1016/J.Sse.2014.06.032  0.419
2013 Iqbal Mahmud M, Celik-Butler Z, Hao P, Srinivasan P, Hou FC, Cheng X, Amey BL, Pendharkar S. A physics-based analytical 1/f noise model for RESURF LDMOS transistors Ieee Transactions On Electron Devices. 60: 677-683. DOI: 10.1109/Ted.2012.2226178  0.479
2012 Mahmud MI, Çelik-Butler Z, Hao P, Srinivasan P, Hou F, Amey BL, Pendharkar S. Effect of stress-induced degradation in LDMOS 1/f noise characteristics Ieee Electron Device Letters. 33: 107-109. DOI: 10.1109/Led.2011.2171473  0.5
2012 Wirth G, Vasileska D, Ashraf N, Brusamarello L, Della Giustina R, Srinivasan P. Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants Microelectronics Reliability. 52: 2955-2961. DOI: 10.1016/J.Microrel.2012.07.011  0.402
2011 Ashraf N, Vasileska D, Wirth G, Srinivasan P. Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants Ieee Electron Device Letters. 32: 1044-1046. DOI: 10.1109/Led.2011.2158287  0.398
2010 Srinivasan P, Xiong W, Zhao S. Low-Frequency Noise in Integrated N-WELL Resistors Ieee Electron Device Letters. 31: 1476-1478. DOI: 10.1109/Led.2010.2074183  0.457
2009 Magnone P, Crupi F, Giusi G, Pace C, Simoen E, Claeys C, Pantisano L, Maji D, Rao VR, Srinivasan P. $1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks Ieee Transactions On Device and Materials Reliability. 9: 180-189. DOI: 10.1109/Tdmr.2009.2020406  0.473
2007 Claeys C, Simoen E, Srinivasan P, Misra D. Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors Solid-State Electronics. 51: 627-632. DOI: 10.1016/J.Sse.2007.02.011  0.543
2007 Chowdhury NA, Srinivasan P, Misra D. Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks Solid-State Electronics. 51: 102-110. DOI: 10.1016/J.Sse.2006.10.010  0.417
2007 Srinivasan P, Linder BP, Narayanan V, Misra D, Cartier E. Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO 2 n-MOSFETs: role of high-κ phonons Microelectronic Engineering. 84: 2274-2277. DOI: 10.1016/J.Mee.2007.04.103  0.509
2006 Srinivasan P, Simoen E, Rittersma ZM, Deweerd W, Pantisano L, Claeys C, Misra D. Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO2 Gate Dielectrics Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2216455  0.469
2006 Srinivasan P, Simoen E, Pantisano L, Claeys C, Misra D. Low-Frequency ( 1 ∕ f ) Noise Performance of n- and p-MOSFETs with Poly- Si ∕ Hf -Based Gate Dielectrics Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2170549  0.496
2006 Crupi F, Kaczer B, Degraeve R, Subramanian V, Srinivasan P, Simoen E, Dixit A, Jurczak M, Groeseneken G. Reliability Comparison of Triple-Gate Versus Planar SOI FETs Ieee Transactions On Electron Devices. 53: 2351-2357. DOI: 10.1109/Ted.2006.880824  0.483
2006 Rittersma ZM, Vertregt M, Deweerd W, Elshocht Sv, Srinivasan P, Simoen E. Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks Ieee Transactions On Electron Devices. 53: 1216-1225. DOI: 10.1109/Ted.2006.872702  0.383
2006 Crupi F, Srinivasan P, Magnone P, Simoen E, Pace C, Misra D, Claeys C. Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks Ieee Electron Device Letters. 27: 688-691. DOI: 10.1109/Led.2006.879028  0.501
2006 Misra D, Garg R, Srinivasan P, Rahim N, Chowdhury NA. Interface characterization of high-k dielectrics on Ge substrates Materials Science in Semiconductor Processing. 9: 741-748. DOI: 10.1016/J.Mssp.2006.08.028  0.407
2006 Srinivasan P, Simoen E, Jaeger BD, Claeys C, Misra D. 1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates Materials Science in Semiconductor Processing. 9: 721-726. DOI: 10.1016/J.Mssp.2006.08.018  0.481
2005 Srinivasan P, Chowdhury NA, Misra D. Charge trapping in ultrathin hafnium silicate/metal gate stacks Ieee Electron Device Letters. 26: 913-915. DOI: 10.1109/Led.2005.859677  0.403
2005 Srinivasan P, Simoen E, Pantisano L, Claeys C, Misra D. Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs Microelectronic Engineering. 80: 226-229. DOI: 10.1016/J.Mee.2005.04.029  0.531
2004 Srinivasan P, Vootukuru B, Misra D. Screening of Si?H bonds during plasma processing Solid-State Electronics. 48: 1809-1814. DOI: 10.1016/J.Sse.2004.05.017  0.337
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